US3749964A - Electron beam device - Google Patents

Electron beam device Download PDF

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Publication number
US3749964A
US3749964A US00101613A US3749964DA US3749964A US 3749964 A US3749964 A US 3749964A US 00101613 A US00101613 A US 00101613A US 3749964D A US3749964D A US 3749964DA US 3749964 A US3749964 A US 3749964A
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United States
Prior art keywords
deflecting
electron beam
currents
stage
coils
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Expired - Lifetime
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US00101613A
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English (en)
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Y Hirata
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Jeol Ltd
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Jeol Ltd
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
    • H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
    • H04N3/16—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by deflecting electron beam in cathode-ray tube, e.g. scanning corrections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
    • H01J29/70—Arrangements for deflecting ray or beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H01J37/1474—Scanning means
    • H01J37/1475—Scanning means magnetic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/24—Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for

Definitions

  • ABSTRACT An electron beam deflecting apparatus incorporating two deflecting stages, each of said deflecting stages being provided with two pairs of deflecting coils for generating two directional magnetic fields, the said fields being at right angles to each other and perpendic ular to the optical axis.
  • the electron beam deflecting apparatus also incorporates a circuit for supplying current for deflecting the electron beam, the said current supply circuit being sufficient to supply the total current required for independently actuating the individual coils constituting the two deflecting stages.
  • the electron beam generated by the electron beam gun is deflected through an angle a by the first electron deflecting stage and through an angle [3, which is proportional and opposite to a, by the second electron deflecting stage.
  • the specimen is thus irradiated at an inclination equal to the difference between angles a and B.
  • tan a is proportional to tan [3.
  • both angles a and B are very small, the angles themselves are substantially proportional.
  • a drawback of this arrangement is the difficulty in producing coils whose magnetic fields are exactly at right angles to each other and deflecting stages which are accurately parallel with respect to each other. As a result, it is extremely difflcult during specimen observation to prevent the irradiation spot from shifting.
  • One attempt to overcome the above defect is described, for example, in German Pat. specification (Auslegeschrift) 1,299,088 where additional deflecting coils have been incorporated as compensators in the deflecting stages. Operation of this apparatus is facilitated by controlling the deflecting current of the compensation coils in accordance with the deflecting current of the regular coils.
  • secondary defects have ensued. These are mainly in connection with the increased size of the deflecting stages, plFs the added difficulty of manufacturing this more complicated deflecting means with sufiiciently precision orientation.
  • the above embodiment is feasible in theory but not in practice.
  • electron beam deflection devices overcome the shortcomings inherent in conventional apparatus and at the same time are easy to manufacture. Further, they are easy to operate, whereby the deflection current is automatically controlled, in accordance with the variable incident angle, so as to fix the position irradiated by the electron beam. Still further, the present invention provides a deflecting device which facilitates comparison of the dark field image and bright field image in the same area of an elcectron miscroscope specimen.
  • FIG. la and FIG. lb are diagrammatic views of the deflecting stages in accordance with the conventional apparatus
  • FIGS. 2,3,4 and 5 are block schematics showing the deflecting current supply according to the present invention.
  • FIG. 6 is an explanatory diagram of the irradiating electron beam path in the deflecting apparatus according to the present invention.
  • FIG. 7 is a diagram ilustrating alignment of the irradiating electron beam by the deflecting apparatus.
  • FIG. 8 is a schematic diagram showing a preferred circuit incorporating the elements shown in FIGS. 2 and 6 for controlling the beam deflection of an electron microscope.
  • FIGS. la and lb show different but analogous embodiments of this invention
  • four coils 2a, 2b, 3a and 3b are wound onto a core 1 whose center axis Z aligns with the optical axis.
  • Coils 2a and 2b generate a magnetic field in the direction of the x-axis and coils 3a and 3b generate a magnetic field in the direction of the y-axis.
  • FIG. 2 is a circuit diagram of the deflecting current supply according to this invention.
  • Coil L through which current I flows represents any one of the coils 2a, 2b, 3a and 3b shown in FIG. 1.
  • Current I is equal to the sum of the current i flowing through resistor Rs and the current i flowing through resistor R, However, since i is normally quite negligible, current I is substantially equal to i,.
  • FIG. 3 shows another embodiment of the deflecting current supply incorporating two current control transistors 11 and 12.
  • the input voltage Ei of the operational or differential amplifier 9 is substantially equal to voltage E's. Accordingly, the following relationships were established:
  • FIG. 3 can substitute for that described in FIG. 2.
  • FIG. 4 shows yet another embodiment of the deflecting current supply this time incorporating three current control resistors l3, l4 and 15.
  • currents I, and I flowing through transistors l3, l4 and 15 respectively, produce current I flowing through coil L.
  • the deflecting current I can be controlled in the same way as in FIG. 2.
  • FIG. 5 shows a further embodiment of the deflecting current supply incorporating operational or differential amplifiers 19 and 20.
  • variable resistors r r, and r voltages Ei, e, and e are controlled thereby determining the deflecting current I the same way as in FIG. 2.
  • the deflecting current I x for generating the magnetic field in the .x-axis direction in the first deflecting stage is expressed as follows:
  • the irradiating electron beam is deflected in the amount 00x1 by the first deflecting stage and is the amount x2 by the second deflecting stage, so as to irradiate a point 28 where the optical axis intersects the plane of specimen 27.
  • the irradiation angle 0 is controlled.
  • the deflecting current supply circuit is designed to satisfy the relation between i, x i, x, and i, y, by, for example, interlocking variable resistors r,, r, and r, in FIG. 2.
  • the irradiating electron beam in the x-axis direction is fully controlled.
  • the irradiating electron beam in the y-axis direction is also fully controlled.
  • the irradiating electron beam in any azimuth is fully controlled.
  • the deflecting angle 00x, as shown in FIG. 6 is controlled by i, x, in turn controlled by r x
  • 00x, and 0,1: are controlled by i, x, and i, y, respectively, in turn controlled by rgc, and r y respectively.
  • a plurality of individually adjustable potentiometers provides current to the individual deflection coils because r x,,' r, x and r y, (interlocked to form control Dx) must be controlled proportionally, in order to satisfy the proportionally of 00x 00x,, 0,x and 0 whose said proportionality is necessary to prevent the irradiation spot from shifting.
  • r, y,, r, y,, and r x (interlocked to form control Dy) are used to deflect the irradiation electron beam in the y-axis direction.
  • Variable resistors r, x, r, y, r, x, and r, y are uti lized to control the alignment deflecting current. Normally, these four resistors are controlled individually.
  • the irradiating electron beam aligns with the optical axis. If not, the beam must be either aligned mechanically by shifting the position of the electron beam generator or deflected electromagnetieally. In the case of the latter, two deflecting stages are necessary.
  • the irradiating electron beam is deflected by the first deflecting stages 31a so as to intersect the cross point between the optical axis and the second deflecting stages 31b. It is then further deflected by 31b so as to align with the optical axis.
  • the conventional deflecting apparatus requires additional deflecting coils. This is not so in the deflecting apparatus according to this invention, the deflecting currents 1', x i y i x and i y refer to equations (9), (l), (1 l) and (12) being used in lieu.
  • the deflecting current i x i x l y,, i y,, i 1:, and i y are set to zero and the deflecting currents i x i y i, x and i are used for alignment purposes.
  • the deflecting currents 1' x;,, i y i and i y are used for alignment purposes and the deflecting currents i x,, 1', x i y i y i x and i y, are used for controlling the inclination of the irradiating electron beam. irradiating electron beam.
  • an electron deflecting apparatus incorporating only one deflecting stage is used for alignment.
  • an apparatus for deflecting an electron beam to irradiate a location on a specimen at different easily selectable azimuthalangles of incidence comprising:
  • a second deflection stage being equipped with deflecting coils L and L for generating magnetic fields substantially at right angles to each other and perpendicular to the optical axis, said magnetic defleeting fields of said second stage being substantially aligned with the magnetic deflecting fields of the first stage;
  • a deflecting current supply for supplying individual coil currents I l 1 and 1 to each of said deflecting coils L L L and L respectively, said individual coil currents being the total of a plurality of individually variable analog currents, such that n: 111 u-z 113 lu nn on lu3 2: zzi 212 2;! 211!
  • zin means for varying simultaneously and proportionally at least some of the analog currents controlling coil current to both first and second stages, such that the means for controlling i,, i and i are interconnected and means for controlling i i and i are interconnected, such that the one deflection stage redirects the electron beam deflected by the other stage to the location on the specimen thus changing the azimuth angle of incidence without moving the location on the specimen on which the beam is incident notwithstanding slight misalignment of the deflection stages and slight deviation from right angles between the fields of the separate stages.
  • an apparatus for deflecting an electron beam to irradiate a location on the specimen comprising:
  • a deflecting current supply for supplying individual coil currents I and I to coils L and L respectively, said individual coil currents being the total of a plurality of individually controlled analog currents, such that I, i i and I, i i and means for varying the analog currents i and i to control coil currents and vary the deflection of the electron beam.

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Electron Beam Exposure (AREA)
US00101613A 1969-12-25 1970-12-28 Electron beam device Expired - Lifetime US3749964A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP44104540A JPS4922351B1 (enrdf_load_stackoverflow) 1969-12-25 1969-12-25

Publications (1)

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US3749964A true US3749964A (en) 1973-07-31

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US00101613A Expired - Lifetime US3749964A (en) 1969-12-25 1970-12-28 Electron beam device

Country Status (5)

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US (1) US3749964A (enrdf_load_stackoverflow)
JP (1) JPS4922351B1 (enrdf_load_stackoverflow)
DE (1) DE2063598B2 (enrdf_load_stackoverflow)
GB (1) GB1340209A (enrdf_load_stackoverflow)
NL (1) NL166576C (enrdf_load_stackoverflow)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3914608A (en) * 1973-12-19 1975-10-21 Westinghouse Electric Corp Rapid exposure of micropatterns with a scanning electron microscope
US4209698A (en) * 1971-12-28 1980-06-24 Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften E.V. Transmission-type charged particle beam apparatus
US4335309A (en) * 1979-09-13 1982-06-15 Siemens Aktiengesellschaft Method and device for the rapid deflection of a particle beam
US4379231A (en) * 1979-03-14 1983-04-05 Hitachi, Ltd. Electron microscope
US4451737A (en) * 1981-06-24 1984-05-29 Hitachi, Ltd. Electron beam control device for electron microscopes
US4687936A (en) * 1985-07-11 1987-08-18 Varian Associates, Inc. In-line beam scanning system
US5276334A (en) * 1991-07-26 1994-01-04 Fujitsu Limited Charged particle beam exposure method and apparatus
US5600212A (en) * 1992-02-20 1997-02-04 Deutsche Thomson-Brandt Gmbh Deflection circuit for a television receiver using symmetrical deflection
US6831281B2 (en) * 2000-12-04 2004-12-14 Nikon Corporation Methods and devices for detecting and canceling magnetic fields external to a charged-particle-beam (CPB) optical system, and CPB microlithography apparatus and methods comprising same
US20080116391A1 (en) * 2006-11-21 2008-05-22 Hitachi High-Technologies Corporation Charged Particle Beam Orbit Corrector and Charged Particle Beam Apparatus
US9947504B2 (en) 2015-06-15 2018-04-17 Carl Zeiss Microscopy Gmbh Particle beam apparatus and method for operating a particle beam apparatus

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018042505A1 (ja) * 2016-08-30 2018-03-08 株式会社 日立ハイテクノロジーズ 電磁偏向器、及び荷電粒子線装置

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3226594A (en) * 1960-07-08 1965-12-28 Joseph W Griffith Electron beam multiplication tube
US3396306A (en) * 1963-06-08 1968-08-06 Telefunken Patent Circuit arrangement for producing a pulse subsequent to a transient setting operation
US3417284A (en) * 1966-08-31 1968-12-17 Sperry Rand Corp Electromagnetic gross beam positioning system
US3427494A (en) * 1965-10-28 1969-02-11 Ibm Corrected deflection circuit for cathode ray tube
US3480827A (en) * 1969-01-14 1969-11-25 Ibm Flyback in double-yoke-drive cathode ray tubes
US3500114A (en) * 1967-08-24 1970-03-10 Sony Corp Convergence system for a color picture tube
US3540032A (en) * 1968-01-12 1970-11-10 Ibm Display system using cathode ray tube deflection yoke non-linearity to obtain curved strokes
DE1299088B (enrdf_load_stackoverflow) * 1966-06-10 1974-10-17

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3226594A (en) * 1960-07-08 1965-12-28 Joseph W Griffith Electron beam multiplication tube
US3396306A (en) * 1963-06-08 1968-08-06 Telefunken Patent Circuit arrangement for producing a pulse subsequent to a transient setting operation
US3427494A (en) * 1965-10-28 1969-02-11 Ibm Corrected deflection circuit for cathode ray tube
DE1299088B (enrdf_load_stackoverflow) * 1966-06-10 1974-10-17
US3417284A (en) * 1966-08-31 1968-12-17 Sperry Rand Corp Electromagnetic gross beam positioning system
US3500114A (en) * 1967-08-24 1970-03-10 Sony Corp Convergence system for a color picture tube
US3540032A (en) * 1968-01-12 1970-11-10 Ibm Display system using cathode ray tube deflection yoke non-linearity to obtain curved strokes
US3480827A (en) * 1969-01-14 1969-11-25 Ibm Flyback in double-yoke-drive cathode ray tubes

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4209698A (en) * 1971-12-28 1980-06-24 Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften E.V. Transmission-type charged particle beam apparatus
US3914608A (en) * 1973-12-19 1975-10-21 Westinghouse Electric Corp Rapid exposure of micropatterns with a scanning electron microscope
US4379231A (en) * 1979-03-14 1983-04-05 Hitachi, Ltd. Electron microscope
US4335309A (en) * 1979-09-13 1982-06-15 Siemens Aktiengesellschaft Method and device for the rapid deflection of a particle beam
US4451737A (en) * 1981-06-24 1984-05-29 Hitachi, Ltd. Electron beam control device for electron microscopes
US4687936A (en) * 1985-07-11 1987-08-18 Varian Associates, Inc. In-line beam scanning system
US5276334A (en) * 1991-07-26 1994-01-04 Fujitsu Limited Charged particle beam exposure method and apparatus
US5600212A (en) * 1992-02-20 1997-02-04 Deutsche Thomson-Brandt Gmbh Deflection circuit for a television receiver using symmetrical deflection
US6831281B2 (en) * 2000-12-04 2004-12-14 Nikon Corporation Methods and devices for detecting and canceling magnetic fields external to a charged-particle-beam (CPB) optical system, and CPB microlithography apparatus and methods comprising same
US20080116391A1 (en) * 2006-11-21 2008-05-22 Hitachi High-Technologies Corporation Charged Particle Beam Orbit Corrector and Charged Particle Beam Apparatus
US7947964B2 (en) * 2006-11-21 2011-05-24 Hitachi High-Technologies Corporation Charged particle beam orbit corrector and charged particle beam apparatus
US9947504B2 (en) 2015-06-15 2018-04-17 Carl Zeiss Microscopy Gmbh Particle beam apparatus and method for operating a particle beam apparatus

Also Published As

Publication number Publication date
JPS4922351B1 (enrdf_load_stackoverflow) 1974-06-07
NL7018708A (enrdf_load_stackoverflow) 1971-06-29
DE2063598A1 (de) 1971-07-08
NL166576C (nl) 1981-08-17
DE2063598B2 (de) 1974-09-05
NL166576B (nl) 1981-03-16
GB1340209A (en) 1973-12-12

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