US3739220A - Workpiece support for glow discharge apparatus - Google Patents

Workpiece support for glow discharge apparatus Download PDF

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Publication number
US3739220A
US3739220A US00251274A US3739220DA US3739220A US 3739220 A US3739220 A US 3739220A US 00251274 A US00251274 A US 00251274A US 3739220D A US3739220D A US 3739220DA US 3739220 A US3739220 A US 3739220A
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US
United States
Prior art keywords
tube
workpiece
base
layer
glow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US00251274A
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English (en)
Inventor
C Jones
S Martin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Application granted granted Critical
Publication of US3739220A publication Critical patent/US3739220A/en
Assigned to GENERAL ELECTRIC COMPANY, A CORP. OF NY. reassignment GENERAL ELECTRIC COMPANY, A CORP. OF NY. ASSIGNMENT OF ASSIGNORS INTEREST. Assignors: WELLMAN THERMAL SYSTEMS CORPORATION, A CORP. OF DE.
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge

Definitions

  • This invention relates generally to a workpiece support for glow discharge apparatus used to carry out ion nitriding and the like, and more particularly relates to an insulating support which reduces the tendency toward arcing.
  • a glow discharge is the process of placing a workpiece in an air tight chamber containing a selected gas or mixture of gases at reduced pressure and establishing an electrical potential between the workpiece and the chamber or an auxiliary electrode under conditions which form a glow discharge around the workpiece.
  • Various processes can be carried out in the glow discharge. For example, ion nitriding can be carried out to form a hard nitride layer on the workpiece if the atmosphere in the chamber includes nitrogen.
  • One of the limitations with the glow discharge process is the tendency of the glow discharge to break down into an arc which damages the workpiece. Insulating materials which might be used to support the workpiece and to insulate it from the container are susceptible to damage also from the normal action of the glow.
  • one object of the present invention is to provide a simple and effective insulating workpiece support which reduces tendency toward arcing of a workpiece in a glow discharge apparatus.
  • Another object of the invention is to provide a simple workpiece support which also serves to shield the electrode and the electrode insulators from the glow discharge.
  • the invention comprises a ceramic tube support which surrounds the insulated workpiece electrode.
  • the electrode is connected to a workpiece table resting on the ceramic tube and forming an acute angle with the top exterior tube surface.
  • a sputtered metal deposit on the ceramic tube exterior provides a surface with a continuous potential gradient, reducing arcing tendency.
  • the interior of the ceramic tube is provided with means to prevent a glow from taking place in the interior thus protecting the electrode and insulator.
  • FIG. 1 is a simplified elevation view, in section, of a glow discharge apparatus
  • FIG. 2 is an enlarged cross sectional view of the workpiece support and electrode assembly.
  • a metal dome 1 is attached to a metal supporting base 2 by suitable means (not shown) and provided with a gas tight seal 3.
  • Dome 1 and base 2 are of electrically conductive material to permit establishing a glow discharge with a workpiece 4 disposed in a chamber 5, by establishing a suitably controlled electrical potential.
  • the glow current is supplied by a power source 6 and may be A.C. but is preferably D.C. with the workpiece 4 connected to the negative terminal.
  • a three-way valve 25 permits connecting chamber 5 first to a vacuum system 7 and then to a gas charging system 8 to allow chamber 5 first to be evacuated and then to be supplied with a suitable atmosphere for conducting an operation on workpiece 4. Under proper conditions, a glow 9 is established around the workpiece.
  • the workpiece 4 rests on an electrically conductive workpiece table 10 which is electrically connected on its underside to the electrode 11.
  • Electrode 11 extends downwardly through a hole 12 in the base 2 of the apparatus and is connected to the negative power lead 13.
  • Electrode 11 is insulated from base 2 by means of a Pyrex insulating tube 14.
  • a thermocouple sheath 15 passes upward through the inside of electrode 11 and through a hole 16 in the workpiece table. Suitable gas tight seals, indicated only diagrammatically, are shown at 17, 18 and 19 to seal the spaces between the aforedescribed members.
  • the workpiece table rests on a ceramic tube 20 which surrounds the electrode 11 and its insulator 14.
  • Tube 20 is preferably formed from Alundum (A1 0 which is one of the cheapest and strongest ceramics. Zirconium, berillium, or various oxide ceramics would also be suitable, but they are more expensive.
  • the workpiece table 10 has an overhanging circumferential lip 21 which diverges downwardly on its inner edge at an angle of approximately 20 to 30 from the surface of ceramic tube 20. This is a critical feature of the invention since the acute angle is chosen to prevent entry of the glow discharge into the converging gap 22 between lip 21 and tube 20.
  • a thin sputtered metal deposit or layer formed by a method to be described which preferably has a resistivity on the order of to 10 ohm-cm.
  • a protective layer of granulated insulating material 24 is disclosed on the floor of the apparatus between electrode insulator 14 and ceramic tube inside the ceramic tube.
  • This may be chosen from the oxides of aluminum, zirconium, berillium etc., but ordinary washed beach sand is entirely satisfactory, since it is fairly coarse, absorbs very little gas, is easy to use and is inexpensive. Granular material is not necessary for layer 24.
  • a ceramic washer would also perform the same function of preventing establishment of a glow between the underside of table 10 and base 2.
  • the sputtered metal deposit 23 forming a conductive, but high-resistance layer on tube 20 is carefully created during the first few runs starting with a clean tube and building up sputtered metal from the workpiece and workpiece table. Care is exercised in the first few runs to use low glow discharge power so that the layer is established. After this, no further attention is necessary since the thickness of the layer becomes selfadjusting.
  • the gap 22 prevents entrance of the glow or formation of a sputtered metal layer at the top of the tube. Therefore the workpiece table remains insulated from the base.
  • the resistance of layer 23 varies with the thicknessof the layer. As more metal is deposited, the resistance is lower and increased heating boils the excess metal off so that the layer reaches an equilibrium thickness and resistance. In this manner the layer 23 becomes self-controlling.
  • a workpiece support for glow discharge apparatus comprising:
  • a workpiece table supported on said tube and having portions forming a protective gap around the top exterior surface of the tube, said gap being dimensioned to restrict entry of the glow
  • a conductive layer substantially coating the exterior of the tube with the exception of the area protected by said gap
  • said workpiece table portions comprise a lip extending downwardly around the top exterior surface of said tube and forming an acute angle therewith on the order of 20 to 30.
  • said conductive layer comprises a sputtered metal deposit having an overall resistivity on the order of 10 to 10 ohm-cm.
  • a workpiece support for glow discharge apparatus comprising:
  • a circular workpiece table supported on said tube and having a circumferential depending lip extending downwardly around the top edge of said tube and forming an acute angle therewith on the order of 20 to 30,
  • a conductive electrode member extending through said second insulating tube and electrically connected to the underside of said workpiece table.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Discharge Heating (AREA)
  • Physical Vapour Deposition (AREA)
  • Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
  • Furnace Charging Or Discharging (AREA)
US00251274A 1972-05-08 1972-05-08 Workpiece support for glow discharge apparatus Expired - Lifetime US3739220A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US25127472A 1972-05-08 1972-05-08

Publications (1)

Publication Number Publication Date
US3739220A true US3739220A (en) 1973-06-12

Family

ID=22951228

Family Applications (1)

Application Number Title Priority Date Filing Date
US00251274A Expired - Lifetime US3739220A (en) 1972-05-08 1972-05-08 Workpiece support for glow discharge apparatus

Country Status (4)

Country Link
US (1) US3739220A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5510664B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2322689A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1399571A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2341846A1 (fr) * 1976-02-18 1977-09-16 Berghaus Ionit Anstalt Jauge thermometrique
EP0002383A1 (en) * 1977-12-05 1979-06-13 Plasma Physics Corporation Method and apparatus for depositing semiconductor and other films
US4328258A (en) * 1977-12-05 1982-05-04 Plasma Physics Corp. Method of forming semiconducting materials and barriers
EP0730266A3 (en) * 1995-02-06 1998-07-01 Hitachi, Ltd. Apparatus for plasma-processing a disk substrate and method of manufacturing a magnetic disk
CN105132858A (zh) * 2015-08-06 2015-12-09 西华大学 内孔局域辉光等离子体放电装置及其使用方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2571421B2 (ja) * 1988-07-04 1997-01-16 大同特殊鋼株式会社 プラズマ浸炭熱処理炉

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2341846A1 (fr) * 1976-02-18 1977-09-16 Berghaus Ionit Anstalt Jauge thermometrique
EP0002383A1 (en) * 1977-12-05 1979-06-13 Plasma Physics Corporation Method and apparatus for depositing semiconductor and other films
US4328258A (en) * 1977-12-05 1982-05-04 Plasma Physics Corp. Method of forming semiconducting materials and barriers
EP0730266A3 (en) * 1995-02-06 1998-07-01 Hitachi, Ltd. Apparatus for plasma-processing a disk substrate and method of manufacturing a magnetic disk
CN105132858A (zh) * 2015-08-06 2015-12-09 西华大学 内孔局域辉光等离子体放电装置及其使用方法
CN105132858B (zh) * 2015-08-06 2017-11-10 西华大学 内孔局域辉光等离子体放电装置及其使用方法

Also Published As

Publication number Publication date
DE2322689A1 (de) 1973-11-22
JPS5510664B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1980-03-18
JPS4961793A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1974-06-14
GB1399571A (en) 1975-07-02

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Date Code Title Description
AS Assignment

Owner name: GENERAL ELECTRIC COMPANY, A CORP. OF NY.

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNOR:WELLMAN THERMAL SYSTEMS CORPORATION, A CORP. OF DE.;REEL/FRAME:003853/0945

Effective date: 19801219