US3723105A - Process for preparing selenium tellurium alloys - Google Patents
Process for preparing selenium tellurium alloys Download PDFInfo
- Publication number
- US3723105A US3723105A US00180000A US3723105DA US3723105A US 3723105 A US3723105 A US 3723105A US 00180000 A US00180000 A US 00180000A US 3723105D A US3723105D A US 3723105DA US 3723105 A US3723105 A US 3723105A
- Authority
- US
- United States
- Prior art keywords
- tellurium
- selenium
- alloy
- alloys
- potential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08207—Selenium-based
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
Definitions
- a selenium-tellurium alloy suitable for electrophotographic photosensitive member is prepared by heating a mixture of selenium and tellurium containing 125% by weight of tellurium to a temperative not lower than 350 C. to melt the mixture, cooling gradually the molten selenium and tellurium to around the melting point of the selenium-tellurium alloy at a rate not higher than 100 C./hr. and then quenching to room temperature within 10 minutes.
- This invention relates to a process for preparing selenium-tellurium alloys having excellent electrophotographic photosensitive characteristics and high durability.
- the figure is a graph for explaining the definition of the sensitivity used in this invention.
- the mixture of selenium and tellurium used in this invention contains 1-25% by weight of tellurium, preferred with 520% by weight, and balance of selenium.
- tellurium When the contents of tellurium is less than 1% by weight, dark resistance increases to reduce the sensitivity while dark resistance becomes too low to use as an electrophotographic photosensitive member when the contents of tellurium is higher than 25% by weight.
- the cooling procedure in this invention comprises two steps i.e. gradual cooling and quenching.
- the gradual cooling step is carried out by cooling the melt of the selenium and tellurium at a temperature not lower than 350 C. to around the melting point of the seleniumtellurium alloys at a cooling rate of not higher than C./hr.
- the quenching step is carried out by quenching the selenium and tellurium composition at around the melting point to room temperature within 10 minutes. It is preferable to quench the alloys in an instant.
- the gradual cooling step produces a relatively long binding chain of selenium-tellurium in a hexagonal structure and the quenching step freeze the thermally and chemically stable binding chain group in the alloy.
- thermal formation of ring-like or monoclinic structure of selenium-tellurium chain showing undesirable photosensible characteristics is inhibited and thereby deterioration of photosensitive characteristics of the selenium-tellurum alloy is prevented.
- the selenium-tellurium alloys obtained according to the present invention may be formed as a photosensitive layer on a support by a conventional vapor depositing method to produce a photosensitive member for electrophotographic processes.
- the photosensitive member may be that of three layer structure, that is, an insulating layer may overlie the selenium-tellurium alloy photosenstive layer.
- EXAMPLE 1 (1) In a Pyrex glass vessel having a softening point of about 600 C. were placed selenium particles (purity, 99.99%) having radius of about 1.5 mm. and powdered tellurium (120-180 mesh) in a mixing ratio of 85 to by weight to fill /2 volume of the vessel. The vessel was brought to a pressure of about 5 10 torr and the upper end of the vessel was sealed, and then the sealed vessel was placed in a stainless steel container. Aluminum oxide wool was packed in the stainless steel container so as to prevent the Pyrex glass vessel from contacting with the stainless steel container. The stainless container was, then, covered with a lid, placed in an electric furnace, and heated.
- the stainless steel container was vibrated for about 2 hours so as to agitate the melt in the Pyrex glass vessel. The heating was stopped, cooled gradually at a rate of about 100 C./hr. to about 260 C. and then thrown into water to quench the melt.
- the seleniumtellurium alloy thus produced is hereinafter called A.
- Each of the above-mentioned three kinds of selenium tellurium alloy was vapor-deposited on a conductive base plate at a pressure of about 2 10 torr with a distance of cm. between the base plate and the melting boat containing the selenium-tellurium alloy at the same base plate temperature for the same vapor-depositing time to produce an electrophotographic photosensitive plate.
- a conductive base plate There may be used various metals and conductive glasses, but a nickel-plated brass of about 1 mm. thick was employed here.
- Photosensitive members obtained by a process as mentioned above were subjected to an electrophotographic process comprising uniform charging and exposure and an electrophotometer was used for measuring characteristics of the photosensitive member.
- the sensitivity is defined as an exposure amount when a dark decay potential a and a light decay potential b satisfy the relation:
- Example 2 The procedure of Example 1 above was followed except that the ratio of selenium to tellurium by weight was 95:5 or :20 in place of :15 to obtain alloys A B and C or alloys A B and C The resulting alloy was used as a photoconductive layer to form a photosensitive plate. The characteristics of the photosensitive plate was measured by an electrophotometer. The result is shown in Table 2 and Table 3.
- EXAMPLE 4 In a way similar to Example 3, a photosensitive member was given a surface potential of 2.2 kv. by a primary charging, subjected to projection of a light and dark pattern at an exposure amount of 6 lux. sec. simultaneously with applying a secondary corona charging of +7 kv. and then subjected to a blanket irradiation to produce an electrostatic latent image (cf. Japanese patent publication No. 24748/1968).
- the photosensitive member using selenium-tellurium alloy A shows an electrostatic contrast far higher than that using selenium-tellurium alloy B or C.
- a photosensitive member obtained by vapor-depositing the selenium-tellurium alloy produced by the present invention is particularly suitable for electrophotographic processes since the residual potential is almost zero and a high electrostatic contrast can be obtained and thereby a clear and fogless image is produced.
- a process for preparing a selenium-tellurium alloy which comprises heating a mixture of selenium and tellurium containing 125% by weight of tellurium to a temperature not lower than 350 C. to melt the mixture, cooling gradually the molten selenium and tellurium to around the melting point of the selenium-tellurium alloy at a rate not higher than 100 C./hr. and then quenching to room temperature within 10 minutes.
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- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photoreceptors In Electrophotography (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP45082399A JPS4930329B1 (de) | 1970-09-19 | 1970-09-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
US3723105A true US3723105A (en) | 1973-03-27 |
Family
ID=13773498
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US00180000A Expired - Lifetime US3723105A (en) | 1970-09-19 | 1971-09-13 | Process for preparing selenium tellurium alloys |
Country Status (2)
Country | Link |
---|---|
US (1) | US3723105A (de) |
JP (1) | JPS4930329B1 (de) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3816116A (en) * | 1970-12-29 | 1974-06-11 | Canon Kk | N-type photosensitive member for electrophotography |
US3957693A (en) * | 1968-03-19 | 1976-05-18 | Siemens Aktiengesellschaft | Process for producing selenium homogeneously doped with tellurium |
US3990894A (en) * | 1969-10-29 | 1976-11-09 | Katsuragawa Denki Kabushiki Kaisha | Method of preparing photosensitive element for use in electrophotography |
US4001014A (en) * | 1973-09-17 | 1977-01-04 | Matsushita Electric Industrial Co., Ltd. | Electrophotographic photosensitive plate having tellurium present in varying concentrations across its thickness |
US4049505A (en) * | 1974-10-14 | 1977-09-20 | Chatterji Arun K | Photoconductors for electrostatic imaging systems |
FR2458100A1 (fr) * | 1979-05-31 | 1980-12-26 | Ricoh Kk | Materiau photoconducteur pour machine a copier electrophotographique |
US4277551A (en) * | 1979-08-20 | 1981-07-07 | Minnesota Mining And Manufacturing Company | Electrophotographic plate having charge transport overlayer |
US4389389A (en) * | 1982-08-02 | 1983-06-21 | Xerox Corporation | Process for preparation of high purity tellurium |
US4411698A (en) * | 1982-08-02 | 1983-10-25 | Xerox Corporation | Process for reclaimation of high purity selenium, tellurtum, and arsenic from scrap alloys |
US4460408A (en) * | 1982-08-05 | 1984-07-17 | Xerox Corporation | Process for preparation of chalcogenide alloys by coreduction of esters |
US4548800A (en) * | 1982-08-02 | 1985-10-22 | Xerox Corporation | Process for selenium purification |
US5084301A (en) * | 1990-09-04 | 1992-01-28 | Xerox Corporation | Alloying and coating process |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3070094B1 (fr) * | 2017-08-11 | 2019-09-06 | Isorg | Systeme d'affichage comprenant un capteur d'images |
-
1970
- 1970-09-19 JP JP45082399A patent/JPS4930329B1/ja active Pending
-
1971
- 1971-09-13 US US00180000A patent/US3723105A/en not_active Expired - Lifetime
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3957693A (en) * | 1968-03-19 | 1976-05-18 | Siemens Aktiengesellschaft | Process for producing selenium homogeneously doped with tellurium |
US3990894A (en) * | 1969-10-29 | 1976-11-09 | Katsuragawa Denki Kabushiki Kaisha | Method of preparing photosensitive element for use in electrophotography |
US3816116A (en) * | 1970-12-29 | 1974-06-11 | Canon Kk | N-type photosensitive member for electrophotography |
US4001014A (en) * | 1973-09-17 | 1977-01-04 | Matsushita Electric Industrial Co., Ltd. | Electrophotographic photosensitive plate having tellurium present in varying concentrations across its thickness |
US4049505A (en) * | 1974-10-14 | 1977-09-20 | Chatterji Arun K | Photoconductors for electrostatic imaging systems |
FR2458100A1 (fr) * | 1979-05-31 | 1980-12-26 | Ricoh Kk | Materiau photoconducteur pour machine a copier electrophotographique |
US4277551A (en) * | 1979-08-20 | 1981-07-07 | Minnesota Mining And Manufacturing Company | Electrophotographic plate having charge transport overlayer |
US4389389A (en) * | 1982-08-02 | 1983-06-21 | Xerox Corporation | Process for preparation of high purity tellurium |
US4411698A (en) * | 1982-08-02 | 1983-10-25 | Xerox Corporation | Process for reclaimation of high purity selenium, tellurtum, and arsenic from scrap alloys |
US4548800A (en) * | 1982-08-02 | 1985-10-22 | Xerox Corporation | Process for selenium purification |
US4460408A (en) * | 1982-08-05 | 1984-07-17 | Xerox Corporation | Process for preparation of chalcogenide alloys by coreduction of esters |
US5084301A (en) * | 1990-09-04 | 1992-01-28 | Xerox Corporation | Alloying and coating process |
Also Published As
Publication number | Publication date |
---|---|
JPS4930329B1 (de) | 1974-08-12 |
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