US3715580A - Multi electron beam apparatus - Google Patents

Multi electron beam apparatus Download PDF

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Publication number
US3715580A
US3715580A US00120975A US3715580DA US3715580A US 3715580 A US3715580 A US 3715580A US 00120975 A US00120975 A US 00120975A US 3715580D A US3715580D A US 3715580DA US 3715580 A US3715580 A US 3715580A
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United States
Prior art keywords
electron
electron beams
electron beam
lens
beams
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US00120975A
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English (en)
Inventor
N Saitou
A Maekawa
C Munakata
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Hitachi Ltd
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Hitachi Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/14—Lenses magnetic
    • H01J37/141—Electromagnetic lenses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe

Definitions

  • ABSTRACT A multi-electron beam recorder having a new type electron lens composed of common exciting coils and a plurality of closely spaced pole piece parts excited by said coils. Electron beams pass through the respective pole piece parts and are focussed therein to impinge on a plurality of photographic plates and to record desired lC patterns thereon.
  • FIG. I PRIOR ART FIG. 3
  • This invention relates to an electron beam apparatus, and more particularly to a multi-electron beam recorder for recording IC (integrated circuit) patterns on a plurality of specimens (photo-graphic medium) at the same time.
  • the conventional multi-electron beam. apparatus is constituted by a combination of a plurality of individual electron beam devices each providing one electron beam therein.
  • this apparatus is merely a multiplication of electron beam devices. Therefore, if said apparatus is used as a multi-electron beam recorder where the distance between the beams is important, many disadvantages occur, as described hereinafter.
  • An object of this invention is to provide a new type multi-electron beam recorder employing a plurality of electron beams.
  • Another object of this invention is to provide a multielectron beam recorder in which the distance'between the respective electron beams can be made very narrow.
  • a further object of this invention is to provide a multi-electron beam recorder wherein the recording operation can be attained in a very short time.
  • the multi-electron beam recorder of this invention is characterized in that an electron lens used therein has a common exciting coil and a plurality of pole piece parts commonly excited by said coils so as to simultaneously focus a plurality of electron beams.
  • FIG. 1 is a schematic diagram showing a conventional electron beam recorder
  • FIG. 2 is a schematic diagram for explaining a process of producing a mask of IC patterns
  • FIG. 3 is a schematic diagram showing an embodiment of this invention.
  • FIG. 4 is a schematic diagram showing an electron lens used in said embodiment.
  • a conventional multi-electron beam recorder is constituted by a mere combination of, for example, two electron beam apparatuses as above described.
  • one of the defects which occurs when IC patterns are recorded by said recorder is that the distance between the two electron beams cannot be made sufficiently narrow and thus the distance between the respective figures of the IC patterns obtained cannot be made less than about 30 cm. Since it is necessary to effect recording at a very high density to record IC patterns, it is impossible in practice to use said conventional recorder due to this drawback without accepting this deficiency.
  • an IC mask must be recorded in such a manner that several thousand chip figures 1, each having a size of 2 X 2 mm, are recorded on a photographic plate or a chrome mask 2 having a size of 2 X 2 inches. Then six kinds of such IC masks must be made very accurately. Therefore, if such masks are made by only one apparatus, as shown in FIG. 1, it takes a very long time and it is impossible to obtain an accurate IC mask on account of voltage variations, etc.
  • a multi-electron beam recorder as shown in FIG. 3, has new type electron lenses so as to'eliminate the defects above described.
  • 10 and 11 are electron guns
  • 12 and 13 are new type electron lenses (only one electron lens may be used therein but focussing of the electron beam is attained better by two electron lenses than that attained by one electron lens)
  • 14 and 15 are deflecting devices to which deflecting signals are applied so as to record desired IC patterns
  • 16 is a photographic film
  • 17 is a movable table
  • 18 and 19 are terminals to which modulating signals are applied.
  • the electron lens 12 has'a common exciting coil 20 and two pole piece parts 21 and 22 excited by said coil 20'.
  • the electron lens 13 has a common exciting coil 20 and two pole piece parts 23 and 24 excited by said coil 20.
  • Two electron beams 25 and 26 emitted from electron guns 10 and 11 pass through the respective pole piece parts in said two electron lenses and are focussed therein. Further, the electron beams thus focussed are deflected by saiddeflecting devices so that two'desired lC patterns are recorded on said film 16.
  • the distance between the two pole piece parts excited commonly in each electron lens is made very narrow, the distance between the two electron beams can be made very small as compared with the prior art device and thus it is possible to effect recording with high density.
  • the magnetic lens field which acts on said electron beams is symmetric with respect to the respective electron beams and thus the astigmatism thereof becomes minimum.
  • auxiliary coils 27 and 28 are provided for fine adjustment, which coils are disposed above or below each of said pole piece parts of the respective electron lenses so as to finely adjust the focal length of said lenses.
  • FIG. 4 shows an electron lens for focussing three electron beams, which lens has a common-exciting coil 29, pole piece parts 30, 31 and 32, magnetic path members 33, 34, 35 and 36, and auxiliary coils for fine adjustment 37, 38 and 39.
  • the auxiliary coils 37, 38 and 39 are disposed in said lens to surround the respective pole pieces 30, 31 and 32.
  • the main magnetic flux'produced by the common exciting coil 29 is supplied to the respective pole piece parts-'30, 31 and 32 through the respective magnetic path members-33, 34, 35 and 36 and since the magnetic flux produced by the respective auxiliary coils 37, 38 and 39 is added to or subtracted from the main magnetic flux, the fine adjustment of said lens can be effected in a more satisfactory manner than that attained by said embodiment shown in FIG. 3.
  • an IC mask can be made very simply. That is, six sheets of the photographic plates are disposed on the movable table 17 and six electron beams focussed by the electron lens as described above are caused to impinge on respective portions of said respective plates and thereby six kinds of IC patterns are caused to be recorded thereon.
  • a .multi-electron beam apparatus comprising a plurality of electron beam sources for emitting respective electron beams, at least one electron lens having a common exciting coil and a pole piece assembly having a plurality of beam passing apertures which are provided in correspondence to the respective electron beams and are commonly excited by said common exciting coil so as to focus respectively said electron beams passing through said apertures, a deflecting device for deflecting said focussed electron beams, and support means for supporting a specimen so as to be 3.
  • a multi-electron beam apparatus according to claim 1 which further comprises a plurality of auxiliary coils disposed in said lens to surround the respective beam passing apertures thereof.
  • a multi-electron beam apparatus which further comprises means for supplying a deflection control signal to said deflecting device so as to record desired lC patterns on said specimen.
  • a multi-electron beam apparatus comprising a plurality of electron beam sources for emitting electron beams, two electron lenses each having a common exciting coil and a pole piece assembly having a plurality of beam passing apertures provided in correspondence to respective electron beams and commonly excited by said common exciting coil so as to focus said respective electron beams passing therethrough, said two electron lenses being disposed along the electron beams respectively, a deflecting device for deflecting said focussed electron beams and support means for supporting a specimen so as to be impinged on by the electron beams.
  • a multi-electron beam apparatus which further comprises a plurality of auxiliary coils disposed adjacent to the respective beams passing apertures of said lens for finely adjusting the focal lengths thereof, respectively.
  • a multi-electron beam apparatus which further comprises a plurality of auxiliary coils disposed in said lens to surround the respective beam passing aperture thereof.
  • a multi-electron beam apparatus which further comprises means for supplying a deflection control signal to said deflecting device so as to record desired IC patterns on said specimen.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
US00120975A 1970-03-04 1971-03-04 Multi electron beam apparatus Expired - Lifetime US3715580A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP45017888A JPS5116754B1 (enrdf_load_stackoverflow) 1970-03-04 1970-03-04

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US3715580A true US3715580A (en) 1973-02-06

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US00120975A Expired - Lifetime US3715580A (en) 1970-03-04 1971-03-04 Multi electron beam apparatus

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JP (1) JPS5116754B1 (enrdf_load_stackoverflow)

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2811553A1 (de) * 1977-03-23 1978-09-28 Western Electric Co Vielfachelektronenstrahlenbuendel- expositionssystem
US4130761A (en) * 1976-03-31 1978-12-19 Tokyo Shibaura Electric Co., Ltd. Electron beam exposure apparatus
US4209702A (en) * 1977-07-25 1980-06-24 Kabushiki Kaisha Akashi Seisakusho Multiple electron lens
EP0066404A3 (en) * 1981-05-21 1984-01-04 Control Data Corporation Multi-channel electron beam accessed lithography apparatus and method of operating the same
US4465934A (en) * 1981-01-23 1984-08-14 Veeco Instruments Inc. Parallel charged particle beam exposure system
US4524278A (en) * 1982-02-15 1985-06-18 Poole Jan B Le Charged particle beam exposure device incorporating beam splitting
US6703624B2 (en) 2000-04-04 2004-03-09 Advantest Corporation Multi-beam exposure apparatus using a multi-axis electron lens, electron lens convergencing a plurality of electron beam and fabrication method of a semiconductor device
EP1432007A1 (en) * 2002-12-17 2004-06-23 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Multi-axis lens, beam system making use of the compound lens, and method of manufacturing the compound lens
US6774646B1 (en) * 2001-12-17 2004-08-10 Kla-Tencor Corporation Electron beam inspection system using multiple electron beams and uniform focus and deflection mechanisms
US6787780B2 (en) 2000-04-04 2004-09-07 Advantest Corporation Multi-beam exposure apparatus using a multi-axis electron lens, fabrication method of a semiconductor device
US20050035308A1 (en) * 2003-08-01 2005-02-17 Leica Microsystems Lithography Ltd. Pattern writing equipment
US20050230633A1 (en) * 2001-07-02 2005-10-20 Lo Chiwoei W Method and apparatus for multiple charged particle beams
US6960767B1 (en) * 1998-05-22 2005-11-01 Micron Technology, Inc. Apparatus for measuring features of a semiconductor device
US20080061246A1 (en) * 2004-06-03 2008-03-13 Tao Zhang Apparatus for Blanking a Charged Particle Beam
US20090065711A1 (en) * 2004-05-17 2009-03-12 Pieter Kruit Charged particle beam exposure system
WO2011071549A1 (en) 2009-12-11 2011-06-16 Hermes Microvision, Inc. A multi-axis magnetic lens
EP2418672A1 (en) 2010-08-11 2012-02-15 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Multi-axis lens, beam system making use of the compound lens, and method of manufacturing the compound lens
WO2012082171A1 (en) 2010-12-14 2012-06-21 Hermes-Microvision, Inc. Apparatus of plural charged particle beams with multi-axis magnetic lens
WO2012082169A1 (en) 2010-12-14 2012-06-21 Hermes-Microvision, Inc. Apparatus of plural charged particle beams with multi-axis magnetic lens
US8791425B2 (en) 2011-12-20 2014-07-29 Hermes Microvision, Inc. Multi-axis magnetic lens for focusing a plurality of charged particle beams
US20150060662A1 (en) * 2013-08-30 2015-03-05 Hermes-Microvision, Inc. Apparatus of plural charged particle beams with multi-axis magnetic lens
US20150179384A1 (en) * 2013-12-20 2015-06-25 Hermes-Microvision, Inc. Multi-axis Magnetic Lens for Focusing a Plurality of Charged Particle Beams
US9431209B2 (en) 2014-08-26 2016-08-30 Hermes-Microvision, Inc. Apparatus of plural charged particle beams with multi-axis magnetic lenses
US9984848B2 (en) * 2016-03-10 2018-05-29 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Multi-beam lens device, charged particle beam device, and method of operating a multi-beam lens device
CN111843192A (zh) * 2019-04-18 2020-10-30 三星显示有限公司 透镜模块以及包括其的衬底切割装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5539842U (enrdf_load_stackoverflow) * 1978-09-08 1980-03-14

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3519873A (en) * 1968-12-18 1970-07-07 Westinghouse Electric Corp Multiple beam electron source for pattern generation

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3519873A (en) * 1968-12-18 1970-07-07 Westinghouse Electric Corp Multiple beam electron source for pattern generation

Cited By (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4130761A (en) * 1976-03-31 1978-12-19 Tokyo Shibaura Electric Co., Ltd. Electron beam exposure apparatus
DE2811553A1 (de) * 1977-03-23 1978-09-28 Western Electric Co Vielfachelektronenstrahlenbuendel- expositionssystem
US4153843A (en) * 1977-03-23 1979-05-08 Bell Telephone Laboratories, Incorporated Multiple beam exposure system
US4209702A (en) * 1977-07-25 1980-06-24 Kabushiki Kaisha Akashi Seisakusho Multiple electron lens
US4465934A (en) * 1981-01-23 1984-08-14 Veeco Instruments Inc. Parallel charged particle beam exposure system
EP0066404A3 (en) * 1981-05-21 1984-01-04 Control Data Corporation Multi-channel electron beam accessed lithography apparatus and method of operating the same
US4524278A (en) * 1982-02-15 1985-06-18 Poole Jan B Le Charged particle beam exposure device incorporating beam splitting
US6960767B1 (en) * 1998-05-22 2005-11-01 Micron Technology, Inc. Apparatus for measuring features of a semiconductor device
US6703624B2 (en) 2000-04-04 2004-03-09 Advantest Corporation Multi-beam exposure apparatus using a multi-axis electron lens, electron lens convergencing a plurality of electron beam and fabrication method of a semiconductor device
US6787780B2 (en) 2000-04-04 2004-09-07 Advantest Corporation Multi-beam exposure apparatus using a multi-axis electron lens, fabrication method of a semiconductor device
US20060108531A1 (en) * 2001-07-02 2006-05-25 Lo Chiwoei W Method and apparatus for multiple charged particle beams
US7262418B2 (en) * 2001-07-02 2007-08-28 Applied Materials, Inc. Method and apparatus for multiple charged particle beams
US7067809B2 (en) * 2001-07-02 2006-06-27 Applied Materials, Inc. Method and apparatus for multiple charged particle beams
US20050230633A1 (en) * 2001-07-02 2005-10-20 Lo Chiwoei W Method and apparatus for multiple charged particle beams
US6774646B1 (en) * 2001-12-17 2004-08-10 Kla-Tencor Corporation Electron beam inspection system using multiple electron beams and uniform focus and deflection mechanisms
US7576917B2 (en) 2002-12-17 2009-08-18 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Multi-axis lens, beam system making use of the compound lens, and method of manufacturing the compound lens
US20060163488A1 (en) * 2002-12-17 2006-07-27 Stefan Lanio Multi-axis lens, beam system making use of the compound lens, and method of manufacturing the compound lens
WO2004054352A3 (en) * 2002-12-17 2004-10-28 Integrated Circuit Testing Multi-axis lens, beam system making use of the compound lens, and method of manufacturing the compound lens
EP1956631A2 (en) 2002-12-17 2008-08-13 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Multi-axis lens, beam system making use of the compound lens, and method of manufacturing the compound lens
EP1432007A1 (en) * 2002-12-17 2004-06-23 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Multi-axis lens, beam system making use of the compound lens, and method of manufacturing the compound lens
EP1956631A3 (en) * 2002-12-17 2009-09-02 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Multi-axis lens, beam system making use of the compound lens, and method of manufacturing the compound lens
US20090261266A1 (en) * 2002-12-17 2009-10-22 Stefan Lanio Multi-axis lens, beam system making use of the compound lens, and method of manufacturing the compound lens
US8158954B2 (en) * 2002-12-17 2012-04-17 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Multi-axis lens, beam system making use of the compound lens, and method of manufacturing the compound lens
US20050035308A1 (en) * 2003-08-01 2005-02-17 Leica Microsystems Lithography Ltd. Pattern writing equipment
US7868307B2 (en) * 2004-05-17 2011-01-11 Mapper Lithography Ip B.V. Charged particle beam exposure system
US20090065711A1 (en) * 2004-05-17 2009-03-12 Pieter Kruit Charged particle beam exposure system
US20080061246A1 (en) * 2004-06-03 2008-03-13 Tao Zhang Apparatus for Blanking a Charged Particle Beam
US7728308B2 (en) * 2004-06-03 2010-06-01 Nanobeam Limited Apparatus for blanking a charged particle beam
WO2011071549A1 (en) 2009-12-11 2011-06-16 Hermes Microvision, Inc. A multi-axis magnetic lens
EP3244419A2 (en) 2009-12-11 2017-11-15 Hermes Microvision Inc. A multi-axis magnetic lens
EP2418672A1 (en) 2010-08-11 2012-02-15 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Multi-axis lens, beam system making use of the compound lens, and method of manufacturing the compound lens
WO2012082171A1 (en) 2010-12-14 2012-06-21 Hermes-Microvision, Inc. Apparatus of plural charged particle beams with multi-axis magnetic lens
EP3232444A1 (en) 2010-12-14 2017-10-18 Hermes Microvision Inc. Multi-axis magnetic immersion objective lens
WO2012082169A1 (en) 2010-12-14 2012-06-21 Hermes-Microvision, Inc. Apparatus of plural charged particle beams with multi-axis magnetic lens
US8791425B2 (en) 2011-12-20 2014-07-29 Hermes Microvision, Inc. Multi-axis magnetic lens for focusing a plurality of charged particle beams
US9000394B2 (en) 2011-12-20 2015-04-07 Hermes Microvision, Inc. Multi-axis magnetic lens for focusing a plurality of charged particle beams
US20150060662A1 (en) * 2013-08-30 2015-03-05 Hermes-Microvision, Inc. Apparatus of plural charged particle beams with multi-axis magnetic lens
US9105440B2 (en) * 2013-08-30 2015-08-11 Hermes Microvision, Inc. Apparatus of plural charged particle beams with multi-axis magnetic lens
US20150179384A1 (en) * 2013-12-20 2015-06-25 Hermes-Microvision, Inc. Multi-axis Magnetic Lens for Focusing a Plurality of Charged Particle Beams
US9202658B2 (en) * 2013-12-20 2015-12-01 Hermes Microvision, Inc. Multi-axis magnetic lens for focusing a plurality of charged particle beams
US9431209B2 (en) 2014-08-26 2016-08-30 Hermes-Microvision, Inc. Apparatus of plural charged particle beams with multi-axis magnetic lenses
US9984848B2 (en) * 2016-03-10 2018-05-29 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Multi-beam lens device, charged particle beam device, and method of operating a multi-beam lens device
CN111843192A (zh) * 2019-04-18 2020-10-30 三星显示有限公司 透镜模块以及包括其的衬底切割装置
CN111843192B (zh) * 2019-04-18 2025-02-25 三星显示有限公司 透镜模块以及包括其的衬底切割装置

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