JPS5116754B1 - - Google Patents

Info

Publication number
JPS5116754B1
JPS5116754B1 JP45017888A JP1788870A JPS5116754B1 JP S5116754 B1 JPS5116754 B1 JP S5116754B1 JP 45017888 A JP45017888 A JP 45017888A JP 1788870 A JP1788870 A JP 1788870A JP S5116754 B1 JPS5116754 B1 JP S5116754B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP45017888A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP45017888A priority Critical patent/JPS5116754B1/ja
Priority to US00120975A priority patent/US3715580A/en
Publication of JPS5116754B1 publication Critical patent/JPS5116754B1/ja
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/14—Lenses magnetic
    • H01J37/141—Electromagnetic lenses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
JP45017888A 1970-03-04 1970-03-04 Pending JPS5116754B1 (enrdf_load_stackoverflow)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP45017888A JPS5116754B1 (enrdf_load_stackoverflow) 1970-03-04 1970-03-04
US00120975A US3715580A (en) 1970-03-04 1971-03-04 Multi electron beam apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP45017888A JPS5116754B1 (enrdf_load_stackoverflow) 1970-03-04 1970-03-04

Publications (1)

Publication Number Publication Date
JPS5116754B1 true JPS5116754B1 (enrdf_load_stackoverflow) 1976-05-27

Family

ID=11956229

Family Applications (1)

Application Number Title Priority Date Filing Date
JP45017888A Pending JPS5116754B1 (enrdf_load_stackoverflow) 1970-03-04 1970-03-04

Country Status (2)

Country Link
US (1) US3715580A (enrdf_load_stackoverflow)
JP (1) JPS5116754B1 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5539842U (enrdf_load_stackoverflow) * 1978-09-08 1980-03-14

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52119178A (en) * 1976-03-31 1977-10-06 Toshiba Corp Electron beam exposure device
CA1100237A (en) * 1977-03-23 1981-04-28 Roger F.W. Pease Multiple electron beam exposure system
JPS5423476A (en) * 1977-07-25 1979-02-22 Akashi Seisakusho Kk Composite electron lens
US4465934A (en) * 1981-01-23 1984-08-14 Veeco Instruments Inc. Parallel charged particle beam exposure system
US4390789A (en) * 1981-05-21 1983-06-28 Control Data Corporation Electron beam array lithography system employing multiple parallel array optics channels and method of operation
NL8200559A (nl) * 1982-02-15 1983-09-01 Ir Jan Bart Le Poole Prof Dr Bestralingsinrichting met bundelsplitsing.
US6124140A (en) * 1998-05-22 2000-09-26 Micron Technology, Inc. Method for measuring features of a semiconductor device
US6787780B2 (en) 2000-04-04 2004-09-07 Advantest Corporation Multi-beam exposure apparatus using a multi-axis electron lens, fabrication method of a semiconductor device
WO2001075947A1 (fr) 2000-04-04 2001-10-11 Advantest Corporation Appareil d'exposition multifaisceau comprenant une lentille elctronique multi-axiale, une lentille electronique multi-axiale pour la focalisation de faisceaux d'electrons, et procede de fabrication de dispositif semi-conducteur
US6750455B2 (en) * 2001-07-02 2004-06-15 Applied Materials, Inc. Method and apparatus for multiple charged particle beams
US6774646B1 (en) * 2001-12-17 2004-08-10 Kla-Tencor Corporation Electron beam inspection system using multiple electron beams and uniform focus and deflection mechanisms
EP1432007B1 (en) * 2002-12-17 2010-03-10 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Multi-axis compound lens, beam system making use of the compound lens, and method of manufacturing the compound lens
GB2404782B (en) * 2003-08-01 2005-12-07 Leica Microsys Lithography Ltd Pattern-writing equipment
KR101099487B1 (ko) * 2004-05-17 2011-12-28 마퍼 리쏘그라피 아이피 비.브이. 대전 입자 빔 노광 시스템
GB2414857B (en) * 2004-06-03 2009-02-25 Nanobeam Ltd Apparatus for blanking a charged particle beam
US8003953B2 (en) 2009-12-11 2011-08-23 Hermes Microvision, Inc. Multi-axis magnetic lens
EP2418672B1 (en) 2010-08-11 2013-03-20 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Multi-axis lens, beam system making use of the compound lens, and method of manufacturing the compound lens
US8294095B2 (en) 2010-12-14 2012-10-23 Hermes Microvision, Inc. Apparatus of plural charged particle beams with multi-axis magnetic lens
US8445862B2 (en) 2010-12-14 2013-05-21 Hermes Microvision, Inc. Apparatus of plural charged particle beams with multi-axis magnetic lens
US9000394B2 (en) 2011-12-20 2015-04-07 Hermes Microvision, Inc. Multi-axis magnetic lens for focusing a plurality of charged particle beams
US9105440B2 (en) * 2013-08-30 2015-08-11 Hermes Microvision, Inc. Apparatus of plural charged particle beams with multi-axis magnetic lens
US9202658B2 (en) * 2013-12-20 2015-12-01 Hermes Microvision, Inc. Multi-axis magnetic lens for focusing a plurality of charged particle beams
US9431209B2 (en) 2014-08-26 2016-08-30 Hermes-Microvision, Inc. Apparatus of plural charged particle beams with multi-axis magnetic lenses
US9984848B2 (en) * 2016-03-10 2018-05-29 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Multi-beam lens device, charged particle beam device, and method of operating a multi-beam lens device
KR102731121B1 (ko) * 2019-04-18 2024-11-18 삼성디스플레이 주식회사 렌즈 모듈 및 이를 포함한 기판 절단 장치

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3519873A (en) * 1968-12-18 1970-07-07 Westinghouse Electric Corp Multiple beam electron source for pattern generation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5539842U (enrdf_load_stackoverflow) * 1978-09-08 1980-03-14

Also Published As

Publication number Publication date
US3715580A (en) 1973-02-06

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