US3705364A - Apparatus for generating microwaves having a generating element and variable reactance element in a cavity resonator - Google Patents

Apparatus for generating microwaves having a generating element and variable reactance element in a cavity resonator Download PDF

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Publication number
US3705364A
US3705364A US861671A US3705364DA US3705364A US 3705364 A US3705364 A US 3705364A US 861671 A US861671 A US 861671A US 3705364D A US3705364D A US 3705364DA US 3705364 A US3705364 A US 3705364A
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variable reactance
generating
resonator
reactance element
generating element
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Expired - Lifetime
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US861671A
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English (en)
Inventor
Masumi Takeshima
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Panasonic Holdings Corp
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Matsushita Electronics Corp
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
    • H03L7/00—Automatic control of frequency or phase; Synchronisation
    • H03L7/02—Automatic control of frequency or phase; Synchronisation using a frequency discriminator comprising a passive frequency-determining element
    • H03L7/04—Automatic control of frequency or phase; Synchronisation using a frequency discriminator comprising a passive frequency-determining element wherein the frequency-determining element comprises distributed inductance and capacitance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B9/00—Generation of oscillations using transit-time effects
    • H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
    • H03B9/14—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance
    • H03B9/141—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance and comprising a voltage sensitive element, e.g. varactor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/006—Functional aspects of oscillators
    • H03B2200/0068—Frequency or FM detection

Definitions

  • References Cited obtain a controlled and/or a modulated microwave 1 output from the apparatus by varying the reactance of UNITED STATES PATENTS and/or by supplying a modulating signal to the varia ble reactance element. 3,141,141 7/1964 Sharpless ..33l/l07 T 3,307,115 2/1967 Tschannen ..33 1136 C X 2 Claims, 2 Drawing Figures 9 Y 5 l l 1 0 C. MPL/F/ER POWERmI/RCE SIGNAL 4 Mr-il- SOURCE 0C POI 11:7? SOURCE IMP/l rT DIODEI VAR/1670f?
  • the present invention relates to apparatuses for generating microwaves, particularly to those capable of generating controlled microwave outputs.
  • a microwave generating element such as a known avalanche diode (also called an IMPATT diode, an abbreviation for Impact ionization Avalanche Transit Time diode)
  • a microwave generating element such as a known avalanche diode (also called an IMPATT diode, an abbreviation for Impact ionization Avalanche Transit Time diode)
  • a movable short-circuiting piston is provided at one end of a cavity resonator into which a generating element such as men.- tioned above is incorporated.
  • this piston is adjusted to derivea generation outputresonant with the resonator, and then the derived output is supplied through a waveguide to a load terminal section.
  • an AC. or a DC control signal is applied directly to the diode thereby to vary the operating point of the diode itself for effecting the frequency modulation.
  • An object of the present invention is to provide an apparatus for generating microwaves free from the above-mentioned drawbacks heretofore experienced.
  • Another object of the present invention isto provide an apparatus for generating controlled microwaves without changing the operating state of a generating element.
  • the apparatus of the present invention comprises a cavity resonator, a generating element disposed within the cavity resonator, a variable reactance element placed in the vicinity of the generating element within the'cavity resonator and means for applying a control signal to'the variable reactance element.
  • the arrangement of thevariable reactance element should be such that when in the resonator the variable reactance element is on one side of the generating element on which a load exists the reactance element be within a distance from the generating element as large as two wavelengths of a microwave to be generated from the apparatus while when in the resonator the variable reactance element is on the opposite side of the generating element the reactance element be between the generating element and a short-circuiting piston.
  • a controlled microwave output resonant with the resonator can be derived owing to the operation of the variable reactance element.
  • FIG. 1 is a block diagram illustrating an example of the apparatus for generating microwaves as well as an example of an application of the apparatus in accordance with the present invention.
  • FIG. 2 is a graph showing a characteristic curve of a Variable reactance element which may be used in the apparatus shown in FIG. 1.
  • a microwave generating element 2 for example, an IMPATT diode and a variable reactance element 3, for example, a variable capacitance diode known as a varactor in the vicinity of the IMPATT diode 2.
  • a variable reactance element 3 for example, a variable capacitance diode known as a varactor in the vicinity of the IMPATT diode 2.
  • Separate DC. power sources 4 and 5 are provided for the IMPATT diode 2 and the variable reactance element 3 respectively.
  • One end of the cavity resonator l is provided witha variable shortcircuiting piston 6.
  • the short piston 6 is operated to adjust the effective cavity of the resonator 1, and by adjusting the bias voltage to be applied to the variable reactance element 3 to aproper value, the apparatus can be tuned to a desired frequency. That is, when the IMPATT diode 2 is given a bias by the DC. power source 4 and is put in a microwave generating state, a predetermined microwave is generated. The frequency of oscillation can be varied only by varying the bias voltage applied to the variable reactance element 3.
  • the tuning of the cavityresonator l is electrically performed by the variable reactance element 3 though conventionally the A tuning is performed almost mechanically by the short piston 6.
  • variable reactance element 3 serving as a variable reactance element may have a well-known variable capacitance characteristic depending on the voltage V applied to the pn junction of the variable reactance element 3, the change in the capacitance C of the element covering several to 10 picofarads, as shown in FIG. 2. Therefore, by incorporating the variable reactance element 3 along with the microwave generating element 2 into the resonator 1, electrical adjustment of the tuning frequency of the resonator is possible owing to the variable capacitance characteristic as shown in FIG. 2 of the element 3 in accordance with the adjustment of the DC. power source 5.
  • the positioning of the variable reactance element 3 with respect to the microwave generating element 2 within the cavity resonator should be such that the variable reactance element 3 is disposed within a distance as large as two wavelengths of the generated microwave from the apparatus measured from the element 2 towards the load or is disposed between the element 2 and the terminator or short piston 6.
  • the positioning of the element 3 was not being such as mentioned above, the resulting microwave output was not satisfactory with the tuning sensitivity dulled while use of a single semiconductor substrate in which both of the elements 2 and 3 were formed under the so-called IC technique in an effort to realize close positioning of the elements or positioning of the element 3 at a distance three-eighths wavelengths or seven-eighths wavelengths of a generated microwave apart from the element 2 resulted in a high performance, miniaturized structure of the apparatus.
  • variable reactance element 3 such as a variable capacitance diode
  • a frequency modulation can be achieved. That is, as shown in FIG. 1, the varactor or the variable reactance element 3 is provided with a proper DC. bias by the DC. power source 5, and at the same time a modulating signal is supplied to the variable reactance element 3 from a signal source 7. As the operating point of the variable reactance element 3 is varied depending on the supplied modulating signal from the source 7, the generated output of the apparatus is frequency modulated and fed to the load. In one example of the apparatus of the present invention, use of a modulating signal at 2 MHz yielded a width of frequency modulation of about I MHz/V.
  • the operating condition of the IMPATT diode 2 is fluctuated by accident, such fluctuation can be automatically compensated for according to the present invention.
  • a portion of the output of the apparatus is used to detect a frequency deviation or difference of the output from the normal state and the detected frequency difference is fed to an converted into a voltage signal by a frequency discriminator 8.
  • the output of the frequency discriminator 8 is negatively fed back to the varactor 3 through an amplifier 9. As a result, automatic frequency control of the apparatus is attained.
  • an IMPATT diode as a microwave generating element
  • other solid-state generating elements such as a Gunn diode, LSA diode and a tunnel diode can equally be used.
  • the variable reactance element apart from the varactor, use may be made of any semiconductor elements having characteristics similar to those of the varactor such as a usual pn junction diode, a Schottky barrier diode, an MOS type diode and a point contact diode.
  • the apparatus for generating microwaves in accordance with the present invention comprises a cavity resonator, a generating element disposed within the cavity'resonator, a variable reactance element positioned in the vicinity of the generating element in the resonator and means for applying a control signal to the reactance element so that any output signal in the microwave range is available without varying the operating point of the generating clement itself, the generating element is operated in a desirable stabilized state and therefore any thermal breakdown of the generating element no longer occurs.
  • the design of the apparatus is considerably facilitated.
  • the variable reactance element such as a variable capacitance diode has a high impedance with respect to a modulating signal source, advantageously a modulating signal may have an amplitude smaller than that used conventionally.
  • An apparatus for generating microwaves comprising: a cavity resonator; a generating element disposed within said resonator; a load coupled with said resonator on one side thereof; a short-circuiting piston provided on the opposite side of said resonator from said load; a variable reactance element formed on a single substrate with said generating element and axially positioned in said resonator on the same side of generating element as said load, wherein the distance between said generating element and said variable reactance element is between three-eighths and seven-eighths wavelength of a microwave generated by said apparatus; means applying a control signal to said variable reactance element; means, including a frequency discriminator, for producing a signal representative of the difference between the actual output of said apparatus and a predetermined reference; means for feeding back said difference signal to said variable reactance element; and means for superimposing a modulating signal on said control signal.
  • An apparatus for generating microwaves comprising: a cavity resonator; a generating element disposed within said resonator; a load coupled with said resonator on one side thereof; a short-circuiting piston provided on the opposite side of said resonator from said load; a variable reactance element formed on a single substrate with said generating element and axially positioned in said resonator on the opposite side of said generating element as said load, wherein the distance between said generating element and said variable reactance element is between three-eighths and seveneighths wavelength of a microwave generated by said apparatus; means applying a control signal to said variable reactance element; means, including a frequency discriminator, for producing a signal representative of the difference between the actual output of said apparatus and a predetermined reference; means for feeding back said difference signal to said variable reactance element; and means for superimposing a modulating signal on said control signal.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
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US861671A 1968-10-04 1969-09-29 Apparatus for generating microwaves having a generating element and variable reactance element in a cavity resonator Expired - Lifetime US3705364A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP43072666A JPS501369B1 (de) 1968-10-04 1968-10-04

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US (1) US3705364A (de)
JP (1) JPS501369B1 (de)
DE (1) DE1949645A1 (de)
FR (1) FR2019963B1 (de)
GB (1) GB1278088A (de)
NL (1) NL6914975A (de)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3858121A (en) * 1972-08-25 1974-12-31 Hitachi Ltd Solid state microwave oscillator with stabilizing resonator and afc loop
US3875535A (en) * 1973-05-24 1975-04-01 Rca Corp Enhanced efficiency diode circuit
US3882419A (en) * 1974-03-01 1975-05-06 Rca Corp Varactor tuned impatt diode microwave oscillator
US4328470A (en) * 1980-05-12 1982-05-04 The United States Of America As Represented By The Secretary Of The Navy Pulse modulated IMPATT diode modulator
EP0110478A1 (de) * 1982-12-01 1984-06-13 Philips Electronics Uk Limited Abstimmbarer Hohlleiteroszillator
FR2542525A1 (fr) * 1983-03-11 1984-09-14 Thomson Csf Generateur a frequence micro-onde modulable en frequence
EP0536835A1 (de) * 1991-10-09 1993-04-14 Philips Electronics Uk Limited Mikrowellenoszillatoren und Sender mit Frequenzstabilisierung
US6999487B2 (en) 2001-10-05 2006-02-14 Xerox Corporation Terahertz generation processes and imaging process thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53161974U (de) * 1977-05-25 1978-12-19

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3858121A (en) * 1972-08-25 1974-12-31 Hitachi Ltd Solid state microwave oscillator with stabilizing resonator and afc loop
US3875535A (en) * 1973-05-24 1975-04-01 Rca Corp Enhanced efficiency diode circuit
US3882419A (en) * 1974-03-01 1975-05-06 Rca Corp Varactor tuned impatt diode microwave oscillator
US4328470A (en) * 1980-05-12 1982-05-04 The United States Of America As Represented By The Secretary Of The Navy Pulse modulated IMPATT diode modulator
EP0110478A1 (de) * 1982-12-01 1984-06-13 Philips Electronics Uk Limited Abstimmbarer Hohlleiteroszillator
FR2542525A1 (fr) * 1983-03-11 1984-09-14 Thomson Csf Generateur a frequence micro-onde modulable en frequence
EP0536835A1 (de) * 1991-10-09 1993-04-14 Philips Electronics Uk Limited Mikrowellenoszillatoren und Sender mit Frequenzstabilisierung
US5294895A (en) * 1991-10-09 1994-03-15 U.S. Philips Corporation Microwave oscillators and transmitters with frequency stabilization
US6999487B2 (en) 2001-10-05 2006-02-14 Xerox Corporation Terahertz generation processes and imaging process thereof

Also Published As

Publication number Publication date
FR2019963B1 (de) 1974-07-12
GB1278088A (en) 1972-06-14
JPS501369B1 (de) 1975-01-17
FR2019963A1 (de) 1970-07-10
DE1949645A1 (de) 1970-04-30
NL6914975A (de) 1970-04-07

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