GB1278088A - Apparatus for generating microwaves - Google Patents

Apparatus for generating microwaves

Info

Publication number
GB1278088A
GB1278088A GB48439/69A GB4843969A GB1278088A GB 1278088 A GB1278088 A GB 1278088A GB 48439/69 A GB48439/69 A GB 48439/69A GB 4843969 A GB4843969 A GB 4843969A GB 1278088 A GB1278088 A GB 1278088A
Authority
GB
United Kingdom
Prior art keywords
diode
microwave
frequency
wavelengths
oct
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB48439/69A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Publication of GB1278088A publication Critical patent/GB1278088A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
    • H03L7/00—Automatic control of frequency or phase; Synchronisation
    • H03L7/02—Automatic control of frequency or phase; Synchronisation using a frequency discriminator comprising a passive frequency-determining element
    • H03L7/04—Automatic control of frequency or phase; Synchronisation using a frequency discriminator comprising a passive frequency-determining element wherein the frequency-determining element comprises distributed inductance and capacitance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B9/00—Generation of oscillations using transit-time effects
    • H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
    • H03B9/14—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance
    • H03B9/141—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance and comprising a voltage sensitive element, e.g. varactor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/006—Functional aspects of oscillators
    • H03B2200/0068—Frequency or FM detection

Abstract

1278088 FM generators; AFC circuits MATSUSHITA ELECTRONICS CORP 2 Oct 1969 [4 Oct 1968] 48439/69 Headings H3A and H3R A microwave generator comprises a cavity resonator 1 having one end connected to a load and the other end coupled to a short-circuiting piston 6, a microwave generating solid-state diode 2 disposed within 1 and a variable reactance element 3 placed either within a distance of two wavelengths of the microwave generated if placed on the load side or between the diode 2 and the piston 6 and an arrangement e.g. D.C. source 5 for applying a control signal to element 3 for varying the frequency of the microwave output without varying the operating point of 2. The elements 2, 3 may be formed on a single substrate with a separation of # or # wavelengths. For effecting frequency correction, the element 3 is controlled by a signal derived from a frequency discriminator 8 and amplifier 9. Frequency modulation may be achieved by superposing a modulating signal from source 7 on the D.C. reactance control signal of element 3. The generating element 2 may be an IMPATT diode, Gunn diode, LSA diode or a tunnel diode. The element 3 may be a varactor, PN junction diode, a Schottky diode, MOS type diode or a point contact diode.
GB48439/69A 1968-10-04 1969-10-02 Apparatus for generating microwaves Expired GB1278088A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP43072666A JPS501369B1 (en) 1968-10-04 1968-10-04

Publications (1)

Publication Number Publication Date
GB1278088A true GB1278088A (en) 1972-06-14

Family

ID=13495900

Family Applications (1)

Application Number Title Priority Date Filing Date
GB48439/69A Expired GB1278088A (en) 1968-10-04 1969-10-02 Apparatus for generating microwaves

Country Status (6)

Country Link
US (1) US3705364A (en)
JP (1) JPS501369B1 (en)
DE (1) DE1949645A1 (en)
FR (1) FR2019963B1 (en)
GB (1) GB1278088A (en)
NL (1) NL6914975A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2133240A (en) * 1982-12-01 1984-07-18 Philips Electronic Associated Tunable waveguide oscillator

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5340068B2 (en) * 1972-08-25 1978-10-25
US3875535A (en) * 1973-05-24 1975-04-01 Rca Corp Enhanced efficiency diode circuit
US3882419A (en) * 1974-03-01 1975-05-06 Rca Corp Varactor tuned impatt diode microwave oscillator
JPS53161974U (en) * 1977-05-25 1978-12-19
US4328470A (en) * 1980-05-12 1982-05-04 The United States Of America As Represented By The Secretary Of The Navy Pulse modulated IMPATT diode modulator
FR2542525A1 (en) * 1983-03-11 1984-09-14 Thomson Csf Microwave frequency generator which can be frequency- modulated
DE69216531T2 (en) * 1991-10-09 1997-06-12 Philips Electronics Nv Microwave oscillators and transmitters with frequency stabilization
US6999487B2 (en) 2001-10-05 2006-02-14 Xerox Corporation Terahertz generation processes and imaging process thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2133240A (en) * 1982-12-01 1984-07-18 Philips Electronic Associated Tunable waveguide oscillator

Also Published As

Publication number Publication date
FR2019963B1 (en) 1974-07-12
FR2019963A1 (en) 1970-07-10
US3705364A (en) 1972-12-05
NL6914975A (en) 1970-04-07
DE1949645A1 (en) 1970-04-30
JPS501369B1 (en) 1975-01-17

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
746 Register noted 'licences of right' (sect. 46/1977)
PCNP Patent ceased through non-payment of renewal fee