US3690290A - Apparatus for providing epitaxial layers on a substrate - Google Patents

Apparatus for providing epitaxial layers on a substrate Download PDF

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Publication number
US3690290A
US3690290A US138601A US3690290DA US3690290A US 3690290 A US3690290 A US 3690290A US 138601 A US138601 A US 138601A US 3690290D A US3690290D A US 3690290DA US 3690290 A US3690290 A US 3690290A
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United States
Prior art keywords
bell jar
furnace
tube
substrate
bell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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US138601A
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English (en)
Inventor
Gary Nicholas Jarvela
Howard Nassime Klink
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Motorola Solutions Inc
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Motorola Inc
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Publication date
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors

Definitions

  • Epitaxial deposition apparatus includes a be j [51] Int. Cl ..C23c 13/12 disposed within a furnace and having h i a l d [58] Field of Search ..118/4849.5; annulus adapted to contain material to be vaporized 48/171174 when heated.
  • First tubular means delivers gaseous References Cited reactant to the annulus and second tubular means delivers'the reaction product, of the vaporized materi- UNTTED STATES PATENTS a1 and gaseous reactant, to a top portion of the bell jar.
  • This invention relates to apparatus for depositing an epitaxial layer of Group III Group V or ll-Vl intermetallic compounds on a substrate.
  • GaAs gallium arsenide
  • GaAs,P or gallium phosphide gallium arsenide phosphide
  • the substrate may be monocrystalline material of the same composition as the epitaxial layer or it may be of a different material having a suitable crystalline form and a lattice distance the same as or very close to the lattice distance of the material being deposited ln known methods of depositing the epitaxial layer, a vertical quartz tube about 6 feet long is used and a heater or furnace, which is also about 6 feet long surrounds the vtube.,ln charging or cleaning the tube and the parts of the apparatus that are in the tube, the furnace must be takenaway from around the tube If the furnace is vertically disposed it must be raised to clear the tube and a very high ceiling is needed, if the furnace is opened as by hinging along a plane through the axis of the tube, the heating provided by the furnace tothe tube and its contents is not uniform around the circumference of the tube. Furthermore, the tube being 6 feet long is expensive and due to its size, is hard to work with. A horizontal reactor of similar size is also complex and cumbersome in operation. An inherent difficulty of the horizontal reactor is
  • a bell jar which includes a container or reservior for melting and reacting gallium and a holder which may be rotational for supporting the .substrates.
  • the bell jar is positioned with the closed end up and means are provided for passing the required chemicals in gaseous or vapor phase along the length of the bell jar and into the upper part of the jar.
  • the Group III and Group V reactants are formed in the top part of the bell jar in gaseous form and in flowing countercurrently to the lower temperature of the substrate react to form the compound which is deposited in solid form on the substrates.
  • the furnace which may be in the shape of a cylinder, having the top thereof closed, is put over the bell jar with the closed end up and provides the desired temperatures in the bell jar, that is the highest temperatures in the region of the top .of the jar, and the lowest temperatures at the bottom of the bell jar.
  • the bell jar may be about 3 feet tall whereby the furnace need be but a little taller than 3 feet and the furnace can be removed in a room having normal headroom. Also, the
  • the apparatus of this invention is easier to charge and to clean than the prior art apparatus.
  • This apparatus results in a much lower reactor enclosure surface to volume ratio for given number of substrates. This reduces purge times, and contamination of the epitaxial deposits from the walls of the reactor.
  • the tubes feeding the gases to the bell jar may be inside of the furnace but outside the bell jar and feed into the top of the bell jar, whereby a larger diamee ter support for the substrates supporting more substrates, may be'used in the jar than when the tubes that feed gases to the top of the bell jar are in thebell jar.
  • a furnace 14 is positioned over the bell jar surrounding the bell jar, on top and sides.
  • the furnace 14 may be composed of resistance elements which are heated by passing current therethrough in a known manner or, in proper circumstances, the furnace 14 may be of the induction heating type.
  • This furnace may be of one piece, whereby it can easily be designed to provide uniform heating around the circumference of the bell jar but with increased heating in the upper portion of the bell jar as compared to the lower portion thereof.
  • the furnace (not shown) used with the long tube cause greater heating in the middle of the length thereof, the heating at the end thereof being symmetrically decreased at points further away from the longitudinal center thereof. It is noted that the heating profile of the prior art long tube is folded over in the present invention, the hottest portion being nearer the upper end rather than in the longitudinal center as with a long tube.
  • a chamber 16, which may be in the form of a hollow annulus is provided for holding the Group III element to be volatized and is supported on the base plate 12 in the bell jar 10 by the legs 18, only two of the three legs being shown.
  • a tube 20 goes up through the base plate 12 and into the chamber 16, a portion of the chamber 16 being broken away to show the top of the tube 20.
  • Another tube 22 extends from the top of the chamber 16 and extends to the top of the bell jar 10 and has an open end which is directed towards the middle of the bell jar at the top thereof.
  • Another tube 24 extends into the bell jar through the base plate 12. The end of the tube 24 terminates near the top, center of the bell jar 10.
  • An exhaust outlet 25 provided in the table 12 for the jar 10.
  • a support '26 with substrates 28 in niches in the surface thereof is rotatably mounted on a shaft 30 to be rotated, as by a pulley 32, which is fixed to the bottom end of the shaft 30.
  • FIG. 2 differs from FIG. 1 generally in that the gas tubes are outside the bell jar, and the Group III element chamber 40 is located above the support 26 and in this case near the top of the. bell jar 34.
  • the support 26 for the substrates '28 maybe larger in diameter, .whereby the numberof substrates 28 that are'processed at one time can be greater in FIG. 2 than in FIG. 1. Due to this similarity, similar elements'in FIGS. 1 and 2 have been givensimilar reference characters.
  • the bell jar 34 of FIG. 2 "must include ports 'fortheentry of the tubes 36 and thereinto. Tubes 36 and"'38 are analogous to tubes 24" and 20in FIG. 1.
  • the tube 36 extends up through the base plate 12 but outside the bell jar 34 and the upper end of the tube 36 enters the bell jar 34 near the topthereof and the end of the tube 36 is in the'bell jar 34.
  • the tube 38 goes up through the base plate 12 outside of the belljar'34 and the upper end thereof goes into the'bell jar 34 and turns to project a gas that is carried thereby into a-container 40 which is also in the bell jar and which contains the material to be melted.
  • the container 40 may hang from the top of the bell jar 34 or from the end of the tube 38.
  • gallium is put into the containers 16 or 40 and substrates 28 are put on the supports-26 in the niches therein as shown and the supports 26 are caused to turn continuously.
  • the furnace 14 is positioned over the bell jarv 10 or over the bell jar 34 and the tubes 36and 38 and the furnace 14 is heated in a known manner.
  • purified I-ICl is passed up through the tube 20 of FIG. I and 38 of FIG. 2 and passed over the molten gallium in the chambers .16 and 40 respectively.
  • Arsine AsI-I alone or a mixture of AsH and hydrogen gas is passed up through the tube 24 in FIG.
  • the I-ICl and the molten gallium react to produce GaCl at the temperature of over 830C at the top of the bell jar 10 or 34.
  • the temperature goes down to about 800C in the region of support 26, and the GaCl which is unstable at temperatures below 800C becomes gallium and GaCl
  • the gallium reacts with the arsine and becomes GaAs.
  • the GaAs is deposited on the substrates 28 which are about 780C, in an epitaxial manner.
  • the chemical reactions are well known and need not be further described.
  • by proper selection of chemicals such as causing the flow of phosphine instead of arsine in the tubes 24 and 36 and using suitable temperatures and flow rates GaP will be deposited on the substrate 28 in an epitaxial manner.
  • the epitaxial layer will be GaAs P It is known that the condition of the surface of the substrate and the composition thereof are important in the production of good epitaxial layers;
  • the vertical positioning of the bell jars, in combination with the rotation imparted to the substrates 28 by rotation of the holders 26 causes more uniform deposition of the epitaxial layer on the substrates 28 than if a horizontal reactor with horizontal flow of gaseswere used. Therefore, the disclosed apto heat said bell jar to its highest temperature in a I region of the topof said bell jar, first tubular means for leading a first gas into said bel jaradjacent a top portion thereof,
  • a horizontally disposed chamber for holding an element to be volatilized in said bell jar and comprising a closed annulus
  • second tubular means for introducing a second gas into said annulus for causing a reaction between said element, when heated by said furnace, and said second gas

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
US138601A 1971-04-29 1971-04-29 Apparatus for providing epitaxial layers on a substrate Expired - Lifetime US3690290A (en)

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US13860171A 1971-04-29 1971-04-29

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JP (1) JPS5029789B1 (enrdf_load_stackoverflow)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3918396A (en) * 1973-05-14 1975-11-11 Siemens Ag Container for the production of semiconductor bodies
US3919968A (en) * 1973-11-29 1975-11-18 Siemens Ag Reaction device for pyrolytic deposition of semiconductor material
US4000716A (en) * 1970-08-12 1977-01-04 Hitachi, Ltd. Epitaxial growth device
US4468410A (en) * 1982-08-18 1984-08-28 Immunomed Corp. Method and apparatus for producing a microscopic specimen slide
DE3541962A1 (de) * 1984-11-27 1986-06-12 Sony Corp., Tokio/Tokyo Verfahren und vakuumbedampfungsapparatur zur herstellung epitaktischer schichten
US4596208A (en) * 1984-11-05 1986-06-24 Spire Corporation CVD reaction chamber
US5104690A (en) * 1990-06-06 1992-04-14 Spire Corporation CVD thin film compounds
WO2002083978A1 (de) * 2001-04-11 2002-10-24 Aixtron Ag Vorrichtung oder verfahren zum abscheiden von insbesondere kristallinen schichten auf insbesondere kristallinen substraten aus de r gasphase
US6923867B2 (en) * 2001-07-12 2005-08-02 Hitachi Kokusai Electric Inc. Substrate processing apparatus and method for manufacturing semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51159489U (enrdf_load_stackoverflow) * 1975-06-12 1976-12-18

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2789062A (en) * 1952-04-03 1957-04-16 Gen Electric Transparent fluoride luminescent screen and method for preparing same
US3213827A (en) * 1962-03-13 1965-10-26 Union Carbide Corp Apparatus for gas plating bulk material to metallize the same
US3407783A (en) * 1964-08-31 1968-10-29 Emil R. Capita Vapor deposition apparatus
US3441000A (en) * 1966-01-03 1969-04-29 Monsanto Co Apparatus and method for production of epitaxial films
US3460510A (en) * 1966-05-12 1969-08-12 Dow Corning Large volume semiconductor coating reactor
US3464846A (en) * 1965-12-08 1969-09-02 Ethyl Corp Method and apparatus for centrifugally plating
US3492175A (en) * 1965-12-17 1970-01-27 Texas Instruments Inc Method of doping semiconductor material
US3594227A (en) * 1968-07-12 1971-07-20 Bell Telephone Labor Inc Method for treating semiconductor slices with gases
US3635771A (en) * 1968-05-21 1972-01-18 Texas Instruments Inc Method of depositing semiconductor material

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2789062A (en) * 1952-04-03 1957-04-16 Gen Electric Transparent fluoride luminescent screen and method for preparing same
US3213827A (en) * 1962-03-13 1965-10-26 Union Carbide Corp Apparatus for gas plating bulk material to metallize the same
US3407783A (en) * 1964-08-31 1968-10-29 Emil R. Capita Vapor deposition apparatus
US3464846A (en) * 1965-12-08 1969-09-02 Ethyl Corp Method and apparatus for centrifugally plating
US3492175A (en) * 1965-12-17 1970-01-27 Texas Instruments Inc Method of doping semiconductor material
US3441000A (en) * 1966-01-03 1969-04-29 Monsanto Co Apparatus and method for production of epitaxial films
US3460510A (en) * 1966-05-12 1969-08-12 Dow Corning Large volume semiconductor coating reactor
US3635771A (en) * 1968-05-21 1972-01-18 Texas Instruments Inc Method of depositing semiconductor material
US3594227A (en) * 1968-07-12 1971-07-20 Bell Telephone Labor Inc Method for treating semiconductor slices with gases

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4000716A (en) * 1970-08-12 1977-01-04 Hitachi, Ltd. Epitaxial growth device
US3918396A (en) * 1973-05-14 1975-11-11 Siemens Ag Container for the production of semiconductor bodies
US3919968A (en) * 1973-11-29 1975-11-18 Siemens Ag Reaction device for pyrolytic deposition of semiconductor material
US4468410A (en) * 1982-08-18 1984-08-28 Immunomed Corp. Method and apparatus for producing a microscopic specimen slide
US4596208A (en) * 1984-11-05 1986-06-24 Spire Corporation CVD reaction chamber
DE3541962A1 (de) * 1984-11-27 1986-06-12 Sony Corp., Tokio/Tokyo Verfahren und vakuumbedampfungsapparatur zur herstellung epitaktischer schichten
US5104690A (en) * 1990-06-06 1992-04-14 Spire Corporation CVD thin film compounds
WO2002083978A1 (de) * 2001-04-11 2002-10-24 Aixtron Ag Vorrichtung oder verfahren zum abscheiden von insbesondere kristallinen schichten auf insbesondere kristallinen substraten aus de r gasphase
US20040129215A1 (en) * 2001-04-11 2004-07-08 Johannes Kaeppeler Method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates
US7128785B2 (en) 2001-04-11 2006-10-31 Aixtron Ag Method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates
US6923867B2 (en) * 2001-07-12 2005-08-02 Hitachi Kokusai Electric Inc. Substrate processing apparatus and method for manufacturing semiconductor device

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JPS5029789B1 (enrdf_load_stackoverflow) 1975-09-26

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