JPS5029789B1 - - Google Patents

Info

Publication number
JPS5029789B1
JPS5029789B1 JP47042102A JP4210272A JPS5029789B1 JP S5029789 B1 JPS5029789 B1 JP S5029789B1 JP 47042102 A JP47042102 A JP 47042102A JP 4210272 A JP4210272 A JP 4210272A JP S5029789 B1 JPS5029789 B1 JP S5029789B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP47042102A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5029789B1 publication Critical patent/JPS5029789B1/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP47042102A 1971-04-29 1972-04-26 Pending JPS5029789B1 (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13860171A 1971-04-29 1971-04-29

Publications (1)

Publication Number Publication Date
JPS5029789B1 true JPS5029789B1 (enrdf_load_stackoverflow) 1975-09-26

Family

ID=22482765

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47042102A Pending JPS5029789B1 (enrdf_load_stackoverflow) 1971-04-29 1972-04-26

Country Status (2)

Country Link
US (1) US3690290A (enrdf_load_stackoverflow)
JP (1) JPS5029789B1 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51159489U (enrdf_load_stackoverflow) * 1975-06-12 1976-12-18

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4942351B1 (enrdf_load_stackoverflow) * 1970-08-12 1974-11-14
DE2324365C3 (de) * 1973-05-14 1978-05-11 Siemens Ag, 1000 Berlin Und 8000 Muenchen Reaktionsgefäß zum Abscheiden von Halbleitermaterial auf erhitzte Trägerkörper
BE817066R (fr) * 1973-11-29 1974-10-16 Enceinte de reaction pour le depot de matiere semi-concuctrice sur des corps de support chauffes
US4468410A (en) * 1982-08-18 1984-08-28 Immunomed Corp. Method and apparatus for producing a microscopic specimen slide
US4596208A (en) * 1984-11-05 1986-06-24 Spire Corporation CVD reaction chamber
JPH0639358B2 (ja) * 1984-11-27 1994-05-25 ソニー株式会社 有機金属気相成長装置
US5104690A (en) * 1990-06-06 1992-04-14 Spire Corporation CVD thin film compounds
DE10118130A1 (de) * 2001-04-11 2002-10-17 Aixtron Ag Vorrichtung oder Verfahren zum Abscheiden von insbesondere kristallinen Schichten auf insbesondere kristallinen Substraten aus der Gasphase
JP4509433B2 (ja) * 2001-07-12 2010-07-21 株式会社日立国際電気 基板処理装置および半導体装置の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2789062A (en) * 1952-04-03 1957-04-16 Gen Electric Transparent fluoride luminescent screen and method for preparing same
US3213827A (en) * 1962-03-13 1965-10-26 Union Carbide Corp Apparatus for gas plating bulk material to metallize the same
NL6700080A (enrdf_load_stackoverflow) * 1966-01-03 1967-07-04
US3407783A (en) * 1964-08-31 1968-10-29 Emil R. Capita Vapor deposition apparatus
US3464846A (en) * 1965-12-08 1969-09-02 Ethyl Corp Method and apparatus for centrifugally plating
US3492175A (en) * 1965-12-17 1970-01-27 Texas Instruments Inc Method of doping semiconductor material
US3460510A (en) * 1966-05-12 1969-08-12 Dow Corning Large volume semiconductor coating reactor
US3635771A (en) * 1968-05-21 1972-01-18 Texas Instruments Inc Method of depositing semiconductor material
US3594227A (en) * 1968-07-12 1971-07-20 Bell Telephone Labor Inc Method for treating semiconductor slices with gases

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51159489U (enrdf_load_stackoverflow) * 1975-06-12 1976-12-18

Also Published As

Publication number Publication date
US3690290A (en) 1972-09-12

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