US3654110A - Method of applying a coating by cathode sputtering - Google Patents

Method of applying a coating by cathode sputtering Download PDF

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Publication number
US3654110A
US3654110A US797125A US3654110DA US3654110A US 3654110 A US3654110 A US 3654110A US 797125 A US797125 A US 797125A US 3654110D A US3654110D A US 3654110DA US 3654110 A US3654110 A US 3654110A
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United States
Prior art keywords
cathode
substrate
anode
coating
coated
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Expired - Lifetime
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US797125A
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English (en)
Inventor
Friedrich Kraus
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Siemens AG
Siemens Corp
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Siemens Corp
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Priority claimed from DE19681690692 external-priority patent/DE1690692A1/de
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target

Definitions

  • the invention is characterized by the fact that a grid or sieve-like perforated cathode, which is comprised, at least at its surface, of the material is to be deposited, is arranged between anode and substrate and is negatively biased against both.
  • the substrate is brought so close to the cathode that the space between the two is insuificient to maintain an independent gas discharge, at the adjusted pressure and the applied voltage.
  • the object to be coated if it is conductive, is connected as the anode and the material to be sputtered as the cathode of a gas discharge, which discharge is effected at an appropriately high voltage.
  • a conductive anode for example a metallic carrier plate, is provided next to the body which is to be coated. In all cases, between the object to be coated and the object to be sputtered, lies the cathode potential drop space of the discharge, i.e.
  • a gas pressure of and 10" torr is adjusted in the discharge, so that one can count on a median free path length of 10 to 10 cm. Due to these conditions, one obtains small sputtering rates and considerable impurities, in connection with materials which are difficult to atomize. Improvement can be achieved partly by using hot cathodes and magnetic fields or special ion sources outside of the highly evacuated space which contains the object to be coated. This type of method is not favorable due to its intricacies and its considerable expenditure.
  • the present invention deals with this problem.
  • the invention relates to a method of coating a layer of inorganic, solid material upon a base, e.g. a semiconductor surface, by cathode sputtering.
  • the method is characterized by the fact that a grid or sieve-like perforated cathode, which is comprised, at least at its surface, of the material to be deposited, is arranged between anode and substrate and is negatively biased against both. Furthermore, the substrate is brought so close to the cathode that the space between the two is insufficient to maintain an independent gas discharge, at the adjusted pressure and the applied voltage.
  • the perforated, e.g. grid-like, cathode is arranged at a distance of a maximum of approximately ten median free path lengths, from the substrate to be coated, so that the cathode drop, which maintains the discharge, is located outside of the space between substrate and cathode, namely between the latter and an anode located a greater distance away.
  • Material, sputtered by the cathode has, therefore, only a short diffusion path.
  • the grid rods of the perforated cathode Will 3 ,654,1 l0 Patented Apr. 4, 1972 have a tape-shaped configuration, whose surfaces lie perpendicularly to the substrate surface.
  • the shape of the cathode is similar, in this case, to that of a grating of a shoe scraper. This improves the effectiveness even more, the radiating cathode surface is enlarged and the uniformity of the atomized layer is not impaired.
  • FIG. 1 schematically shows appropriate apparatus for performing the method of a preferred embodiment of the invention
  • FIG. 2 shows a preferred embodiment of the grid-type cathode, in an oblique top view
  • FIG. 3 shows another embodiment of the invention.
  • the object 1 to be coated e.g. a semiconductor crystal of silicon or germanium, or the carrier for the conductor paths or resistor layers, is connected to the positive pole of a direct current voltage source 2, at whose negative pole is the cathode 3.
  • An additional direct voltage source 4 is between the cathode 3 and the anode 5.
  • This arrangement with the exception of the direct current voltage sources (e.g. batteries), is arranged in a vessel 6, for example made of glass, which can be evacuated.
  • the distance D between the cathode 3 and the anode 5 is 20 cm.
  • the substrate 1 is located on a holder 7 which serves, at the same time, as an electric lead and which makes it possible to regulate the distance d between substrate 1 and cathode 3. It is also possible to swing the cathode 3 out from the space between substrate 1 and anode S to apply an appropriately high voltage between the anode 5 and the substrate 1. In this manner the substrate is cleaned by exposure of its surface to ion bombardment.
  • the process is preferably carried out at a continuous evacuation apparatus, just as it is sometimes expedient to effect the actual coating of the substrate 1 with a continuous evacuation pump. Connection to a vacuum pump (not shown) is indicated as 8.
  • Argon for example, is introduced at 9 via a needle valve, which regulates the gas pressure.
  • the cathode 3 is then placed between substrate 1 and anode 5 and, in accordance with the present invention, the dimensioning of the distance d is observed.
  • the voltages between substrate 1, cathode 3 and anode 5 are so selected that in any event only one sputtering of the cathode surface takes place while such action is prevented at the surface of the substrate.
  • a satisfactory coating quota is obtained at the surface of the substrate, even when the metals involved are distinctly difficult to atomize, such as tungsten, molybdenum, chromium, tantalum, titanium, and aluminum.
  • Semiconductors and non-metals, as well as appropriately resistant chemical compounds such as oxides, nitrides, carbides, silicides and other such compounds can be atomized or applied as coating.
  • atomizing or sputtering non-conductive chemical compounds in the manner suggested by the present invention, is first to produce said compounds in the gas chamber in such a way that a conductive component, e.g. silicon, is sputtered as a cathode in a non-inert gas, e.g. oxygen, nitrogen or their compounds, whereupon the substrate will be coated with the compound which results.
  • a conductive component e.g. silicon
  • a non-inert gas e.g. oxygen, nitrogen or their compounds
  • the perspective view of the cathode 3, illustrated in FIG. 2, shows plainly the preferred, tape or band-like structure of the individual rods which form the cathode.
  • the tapes can also be oriented diagonally to the surface of the substrate.
  • the coated layers obtained according to the method of the invention have a particularly good adherence if the distance is less than approximately one median free path length. It is moreover recommended to move the cathode in parallel to the substrate surface, respectively to shift the substrate 1 back and forth beneath the cathode during the atomizing process in order to improve, in this manner, the uniformity of the coated layer.
  • the carrier for these parts can be constructed as a spherical segment 7 whereby the space of the recipient will be utilized to the utmost.
  • the grid-shaped perforated cathode 3 is then also curved.
  • the grid is arranged closely to the inside surface of the carrier segment 7.
  • the metal wall 6 of the recipient which is at ground potential can serve as the anode and can be in conductive connection, if necessary, with the carrier segment 7.
  • This arrangement also makes it possible for the cathode 3 to swing out of the way prior to or following the sputtering process and to place an evaporization source into the center point M of the carrier segment as well as to vapor-depoist an additional material upon the parts 1 which are to be coated.
  • a method of applying a layer of inorganic solid material upon a substrate, by means of a cathode sputtering which comprises placing a grid-like perforated cathode, comprised at least at its surface, of the material to be sputtered, between the anode and the substrate, said cathode being negatively biased with respect to both the anode and substrate, the substrate being so close to the cathode that not independent gas discharge can occur between the two.
  • a method of supplying a layer of inorganic solid material upon a substrate, by means of a cathode sputtering which comprises placing a grid-like perforated cathode, comprised at least at its surface, of the material to be sputtered, between the anode and the substrate, said cathode being negatively biased with respect to both the anode and substrate, the substrate being so close to the cathode that no independent gas discharge can occur between the two, the distance between cathode and substrate being a maximum of ten median, free path lengths of the particles, sputtered from the cathode.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
US797125A 1968-02-12 1969-02-06 Method of applying a coating by cathode sputtering Expired - Lifetime US3654110A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19681690692 DE1690692A1 (de) 1968-02-12 1968-02-12 Verfahren zum Aufbringen einer Schicht aus anorganischem festem Material auf einer Unterlage durch Kathodenzerstaeubung

Publications (1)

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US3654110A true US3654110A (en) 1972-04-04

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US (1) US3654110A (enrdf_load_stackoverflow)
FR (1) FR1595037A (enrdf_load_stackoverflow)

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3897324A (en) * 1973-06-25 1975-07-29 Honeywell Inc Material deposition masking for microcircuit structures
US3932232A (en) * 1974-11-29 1976-01-13 Bell Telephone Laboratories, Incorporated Suppression of X-ray radiation during sputter-etching
US4006073A (en) * 1975-04-03 1977-02-01 The United States Of America As Represented By The United States Energy Research And Development Administration Thin film deposition by electric and magnetic crossed-field diode sputtering
US4026787A (en) * 1974-01-25 1977-05-31 Coulter Information Systems, Inc. Thin film deposition apparatus using segmented target means
US4051063A (en) * 1973-11-20 1977-09-27 United Kingdom Atomic Energy Authority Storage of material
US4219199A (en) * 1976-12-24 1980-08-26 Kazumi Okuda Diamond with molybdenum bonded thereto
US4428812A (en) 1983-04-04 1984-01-31 Borg-Warner Corporation Rapid rate reactive sputtering of metallic compounds
US4520268A (en) * 1983-05-26 1985-05-28 Pauline Y. Lau Method and apparatus for introducing normally solid materials into substrate surfaces
US4731539A (en) * 1983-05-26 1988-03-15 Plaur Corporation Method and apparatus for introducing normally solid material into substrate surfaces
US4824544A (en) * 1987-10-29 1989-04-25 International Business Machines Corporation Large area cathode lift-off sputter deposition device
US5415753A (en) * 1993-07-22 1995-05-16 Materials Research Corporation Stationary aperture plate for reactive sputter deposition
US5512151A (en) * 1992-09-25 1996-04-30 Minolta Camera Kabushiki Kaisha Method of making thin-layer component
US5556525A (en) * 1994-09-30 1996-09-17 Advanced Micro Devices, Inc. PVD sputter system having nonplanar target configuration and methods for operating same
US5597462A (en) * 1993-06-24 1997-01-28 Hyundai Electronics Industries Co., Ltd. Condensing device for sputtering device
US5716485A (en) * 1995-06-07 1998-02-10 Varian Associates, Inc. Electrode designs for controlling uniformity profiles in plasma processing reactors
US5757879A (en) * 1995-06-07 1998-05-26 International Business Machines Corporation Tungsten absorber for x-ray mask
USD400511S (en) 1996-03-21 1998-11-03 Applied Materials, Inc. Magnet structure for a conical target
US5919345A (en) * 1994-09-27 1999-07-06 Applied Materials, Inc. Uniform film thickness deposition of sputtered materials
US6042706A (en) * 1997-01-14 2000-03-28 Applied Materials, Inc. Ionized PVD source to produce uniform low-particle deposition
US20110139246A1 (en) * 2009-12-16 2011-06-16 Primestar Solar, Inc. Methods for forming a transparent conductive oxide layer on a substrate
WO2013074211A1 (en) * 2011-11-01 2013-05-23 The Boeing Company Method and apparatus for deposition using an atmospheric pressure plasma

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2426093A2 (fr) * 1974-03-27 1979-12-14 Anvar Perfectionnements aux procedes et dispositifs de fabrication de couches minces semi-conductrices dopees et aux produits obtenus
US4313815A (en) * 1978-04-07 1982-02-02 Varian Associates, Inc. Sputter-coating system, and vaccuum valve, transport, and sputter source array arrangements therefor
US4474659A (en) * 1982-05-28 1984-10-02 Fazal Fazlin Plated-through-hole method

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3897324A (en) * 1973-06-25 1975-07-29 Honeywell Inc Material deposition masking for microcircuit structures
US4051063A (en) * 1973-11-20 1977-09-27 United Kingdom Atomic Energy Authority Storage of material
US4026787A (en) * 1974-01-25 1977-05-31 Coulter Information Systems, Inc. Thin film deposition apparatus using segmented target means
US3932232A (en) * 1974-11-29 1976-01-13 Bell Telephone Laboratories, Incorporated Suppression of X-ray radiation during sputter-etching
US4006073A (en) * 1975-04-03 1977-02-01 The United States Of America As Represented By The United States Energy Research And Development Administration Thin film deposition by electric and magnetic crossed-field diode sputtering
US4219199A (en) * 1976-12-24 1980-08-26 Kazumi Okuda Diamond with molybdenum bonded thereto
US4428812A (en) 1983-04-04 1984-01-31 Borg-Warner Corporation Rapid rate reactive sputtering of metallic compounds
US4520268A (en) * 1983-05-26 1985-05-28 Pauline Y. Lau Method and apparatus for introducing normally solid materials into substrate surfaces
US4731539A (en) * 1983-05-26 1988-03-15 Plaur Corporation Method and apparatus for introducing normally solid material into substrate surfaces
US4824544A (en) * 1987-10-29 1989-04-25 International Business Machines Corporation Large area cathode lift-off sputter deposition device
US5512151A (en) * 1992-09-25 1996-04-30 Minolta Camera Kabushiki Kaisha Method of making thin-layer component
US5597462A (en) * 1993-06-24 1997-01-28 Hyundai Electronics Industries Co., Ltd. Condensing device for sputtering device
US5415753A (en) * 1993-07-22 1995-05-16 Materials Research Corporation Stationary aperture plate for reactive sputter deposition
US5919345A (en) * 1994-09-27 1999-07-06 Applied Materials, Inc. Uniform film thickness deposition of sputtered materials
US5556525A (en) * 1994-09-30 1996-09-17 Advanced Micro Devices, Inc. PVD sputter system having nonplanar target configuration and methods for operating same
US5716485A (en) * 1995-06-07 1998-02-10 Varian Associates, Inc. Electrode designs for controlling uniformity profiles in plasma processing reactors
US5757879A (en) * 1995-06-07 1998-05-26 International Business Machines Corporation Tungsten absorber for x-ray mask
USD400511S (en) 1996-03-21 1998-11-03 Applied Materials, Inc. Magnet structure for a conical target
US6042706A (en) * 1997-01-14 2000-03-28 Applied Materials, Inc. Ionized PVD source to produce uniform low-particle deposition
US20110139246A1 (en) * 2009-12-16 2011-06-16 Primestar Solar, Inc. Methods for forming a transparent conductive oxide layer on a substrate
US8303779B2 (en) * 2009-12-16 2012-11-06 Primestar Solar, Inc. Methods for forming a transparent conductive oxide layer on a substrate
WO2013074211A1 (en) * 2011-11-01 2013-05-23 The Boeing Company Method and apparatus for deposition using an atmospheric pressure plasma
CN103906855A (zh) * 2011-11-01 2014-07-02 波音公司 用于使用常压等离子体进行沉积的方法和装置
JP2015501388A (ja) * 2011-11-01 2015-01-15 ザ・ボーイング・カンパニーＴｈｅＢｏｅｉｎｇ Ｃｏｍｐａｎｙ 大気圧プラズマを用いる堆積のための方法及び装置
US9145602B2 (en) 2011-11-01 2015-09-29 The Boeing Company Open air plasma deposition system
US20160053369A1 (en) * 2011-11-01 2016-02-25 The Boeing Company Open Air Plasma Deposition Method
CN103906855B (zh) * 2011-11-01 2017-03-29 波音公司 用于使用常压等离子体进行沉积的方法和装置
US9758864B2 (en) * 2011-11-01 2017-09-12 The Boeing Company Open air plasma deposition method

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FR1595037A (enrdf_load_stackoverflow) 1970-06-08

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