US3614423A - Charged particle pattern imaging and exposure system - Google Patents

Charged particle pattern imaging and exposure system Download PDF

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Publication number
US3614423A
US3614423A US73898A US3614423DA US3614423A US 3614423 A US3614423 A US 3614423A US 73898 A US73898 A US 73898A US 3614423D A US3614423D A US 3614423DA US 3614423 A US3614423 A US 3614423A
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Prior art keywords
slit
target
source
forming
imaging system
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Expired - Lifetime
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US73898A
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English (en)
Inventor
Louis N Heynick
Eugene R Westerberg
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SRI International Inc
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Stanford Research Institute
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G15/00—Apparatus for electrographic processes using a charge pattern
    • G03G15/22—Apparatus for electrographic processes using a charge pattern involving the combination of more than one step according to groups G03G13/02 - G03G13/20
    • G03G15/32—Apparatus for electrographic processes using a charge pattern involving the combination of more than one step according to groups G03G13/02 - G03G13/20 in which the charge pattern is formed dotwise, e.g. by a thermal head
    • G03G15/321—Apparatus for electrographic processes using a charge pattern involving the combination of more than one step according to groups G03G13/02 - G03G13/20 in which the charge pattern is formed dotwise, e.g. by a thermal head by charge transfer onto the recording material in accordance with the image
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/12—Lenses electrostatic
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/027—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed by irradiation, e.g. by photons, alpha or beta particles
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/09—Treatments involving charged particles
    • H05K2203/092—Particle beam, e.g. using an electron beam or an ion beam
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
    • H05K2203/107—Using laser light

Definitions

  • a charged-particle beam-pattern forming and imaging system in which charged particles from one or more sources impinge upon an imaging plate.
  • a highvoltage electrical source is connected between the imaging plate and a target to produce a strong electrical field therebetween.
  • the imaging plate contains one or more long and narrow slits which may be straight or curved to any desired configuration. Each slit functions as a lens to yield one image of itself for each particle source, each image being converged only along the width of the slit (one-dimension convergence).
  • LOW VOLTAGE POWER SUPPL Y may VOLTAGE paws/e suppz. Y
  • the present invention involves a novel extension of the principle of an invention described in application entitled Multiple Imaging Exposure System, Ser. No. 847,326, filed Aug. 4, [969, and assigned to the assignee of the present invention.
  • This invention relates to electron or ion beam-forming systems and more particularly to such systems for producing patterns of long and very narrow closely spaced parallel lines or grooves, interdigital lines, meander lines, and other more complex patterns on appropriate substrates in nonserial fashion analogous to photography but with higher resolution than can be obtained by photolithographic techniques.
  • a common method of producing sharply defined configurations on a substrate is to use light to expose the desired configuration to photosensitive resist material deposited on the substrate.
  • the resist is then developed and the areas of the underlying' material uncovered thereby are removed with an etchant that does not attach the resist.
  • the production of submicron patterns requires the use of charged particles rather than light as an exposure means.
  • the useful range of photon wavelength limits practical resolution of photoresists to the order of a micron, whereas the wavelength of electrons used in resist exposure is IOtimes smaller, thus enabling a corresponding increase in resolution.
  • an exposure system which utilizes a mesh screen as an array of electron-optical lenses, one per hole in the screen. More specifically, an electron source illuminates a pattern mask having a desired aperture pattern therein. Electrons passing through the pattern mask impinge upon a mesh screen.
  • a high-voltage electrical source is connected between the mesh screen and an electron-sensitive resist-coated substrate to produce a strong electrical field therebetween.
  • Each hole in the mesh screen acts as a lens for producing an image of the pattern mask on the resist, resulting in an array of exposed images on the electron-sensitive resist.
  • a basic principle of this prior invention is that the converging electrical field at each screen hole has radial symmetry about the axis of the screen hole so that the image produced on the resist-coated substrate is a uniformly demagnified replica of the object pattern.
  • a plate having one or more long and narrow slits therethrough is used instead of a mesh screen, the principle being that the strong electrical field between the plate and the substrate produces convergence only in the directions corresponding to the narrow dimension of each slit at each location along its length (one-dimensional convergence), s distinguished from the uniform convergence in all directions produced by each screen hole.
  • the slits in the plate may be straight or curved segments, or of any desired combinations or configurations thereof.
  • the electron image produced on the substrate by the plate is of the same size and configuration as the slit pattern therethrough but the line width of the image pattern is smaller than the slit width by the one-dimensional convergence factor. If two or more distant or small sources of electrons are used to illuminate the plate then each such source will produce an image of the slit pattern.
  • One convenient method for providing one or more such electron sources is to use an electron emitter (cathode) to properly illuminate a plate having as many apertures therethrough as the number of sources desired, each such aperture thereby constituting an effective source. Combinations of electron sources and slit patterns are selected to produce any desired image patterns, as exemplified later herein.
  • FIG. 1 is an overall system diagram of a pattern-imaging and exposure system.
  • FIG. 2 is an isometric view of a portion of the system of FIG. 1 showing the relationship between the target surface, imaging plate and source mask.
  • FIG. 3 is a cross-sectional view of a slit in the imaging plate and target surface illustrating the electrical field therebetween.
  • FIG. 4a illustrates another embodiment of an imaging plate.
  • FIG. 4b illustrates the image produced with the imaging plate of FIG. 4a and a source mask having a linear array of holes.
  • FIG. 5a shows another form of imaging plate.
  • FIG. 5b shows the image which can be produced with the imaging plate of FIG. 5a.
  • FIG. 6 shows another form of source mask having two linear arrays of holes which staggered with respect to each other.
  • FIGS. 7 and 8 illustrate other embodiments of a pattern imaging system for use with the source mask of FIG. 6 for producing with one exposure the image shown in FIG. b.
  • FIGS. 9a, 9b and 90 show other embodiments of imaging plates for producing images of meander lines, curved lines and intersecting lines, respectively.
  • FIG. 1 there is shown one of the preferred embodiments of the invention in which the charged particles used are electrons.
  • a low-voltage power supply 11 is connected between a cathode 12 and a control electrode 13 which are all disposed within a vacuum chamber 14.
  • the vacuum chamber M may be any of the well-known vacuum enclosures which may be evacuated, for example, to Torr and the cathode is typically circular, rfainch in diameter.
  • the cathode 12 produces electrons which pass through control electrode 13 and are focused by a suitable electron lens 15, illustrated in FIG. 1 as a three-electrode unipotential or cinzel lens.
  • Einzel lenses and other suitable electron lenses are well known in the art.
  • a source mask 17 which contains one or more suitably located apertures is placed at the focal point of the lens 15.
  • the intensity distribution of the electrons at the source mask 17 is usually of a Gaussian shape but by using only that portion of the electron stream near the peak of the distribution, the illumination is nearly constant across the apertured portion of the source mask 17. Electrons passing through the source mask 17 impinge on an imaging plate 18.
  • a high-voltage power supply 19 (on the order of 1.5 to 3 RV) is connected between the imaging plate 18 and a substrate 21.
  • the substrate 21 has, in a first embodiment, a target surface or coating 22 of electron-sensitive resist, examples of which are well known in the art.
  • the imaging plate 18 has a pattern of long and narrow slits which, because of the high-electric field produced thereat by power supply 19, act as one-dimensionally convergent electron lenses for forming images of the slit pattern on the target surface 22 having much narrower line widths than he slits in imaging plate 18. If the source mask 17 has only one aperture, then only one image of the slit pattern in imaging plate 18 is formed on the target surface 22.
  • each aperture produces an image of the slit pattern in imaging plate 18 on the target surface 22, and the images are located relative to one another in the same arrangement as the disposition of apertures in the source mask 17, but at correspondingly smaller distances.
  • Alternative arrangements are possible in the system of FIG. 1.
  • source 12 is made to be an ion rather than an electron source, then one-dimensionally converged ion images of the slit pattern in imaging plate 18 is produced on the coating 22, one such image for each aperture in source mask 17. Since the system of FIG. 1 is wholly electrostatic, the paths taken by the ions are identical to those traversed by the electrons; the ions merely traverse those trajectories at lower velocities. Positive ions, of course, require that the singleness of he voltages supplied by low-voltage power supply 11 and high-voltage power supply 19 be reversed.
  • patterns can be etched into the substrate material 21 directly, thereby eliminating the use of a resist layer 22, which requires exposure and development. This is done by using the slit patterns formed in the ion beam to sputter away or chemically remove the substrate material. In such chemical removal the ion beam chemically reacts with the substrate material to form a volatile compound. Hence, pattern micromachining of substrates or thin films thereon can be done directly. Further, such an arrangement can be used for producing arrays of ion-implanted semiconductor devices in semiconductor or insulator substrates by applying from highvoltage power supply 19 a voltage on the order of 20 to I00 KV in order to obtain deep penetration of the ions in the substrate 21.
  • FIG. 2 is another view showing the relationship between the source mask 17, the imaging plate 18 and the substrate 21 and target surface 22.
  • the imaging plate 18 has a single long and very narrow slit 23 therein.
  • the source mask 17 is spaced from the imaging plate 18 and in this embodiment may have a single hole 24, equivalent to a single source.
  • the electric field which is produced between the imaging plate 18 and the substrate 21 and target surface 22 is convergent only in the direction parallel to the narrow dimension or width w of the slit 23.
  • This convergent electrical field is present along the entire length 1 of the slit 23.
  • the image produced on the target surface 22 is a line parallel to and as long as the length 1 of the slit 23, and this line image has a width much smaller than the slit width w or the size of the aperture 24 in the source mask 17.
  • the demagnification factor of the system is adjustable by varying the relative spacing between the target surface 22 and the imaging plate 18 and the relative spacing between the imaging plate 18 and the source mask 17.
  • the width of he line image produced on the target surface 22 will be the width of the slit w demagnified by a factor of 150.
  • very accurately defined submicron width lines may be produced or imaged on the target surface 22.
  • the imaging screen can have straight or curved slit segments of various lengths, relative orientations, and locations (including junctions and intersections) which, together with appropiatc aperture patterns in the source mask can be selected to provide a great variety of image patterns.
  • FIG. 4a consider an imaging plate 26 which contains an ell-shaped slit 27. Assuming that the aperture pattern in the source mask is a single aperture, then the image produced on a target surface will be an ell of the same dimensions but of demagnified line width.
  • the aperture pattern is a linear array of holes, say of 75-micron diameter and spaced on I50-micron centers along a line perpendicular to the long arm of the ell, and the parameters of the system are adjusted to yield a demagnification of 150 times, then the image produced on the target 28 as shown in FIG. 4b consists of a corresponding array 29 of zmicron wide lines, one per aperture in the source mask, spaced on I micron centers and joined together at one end. This array 29 is produced with one exposure and no indexing or scanning of the electron beam is necessary.
  • an imaging plate 31 has a U-shaped slit 32 therein.
  • Shutters are provided for selectively obstructing regions 33 and 34 of the slit 32 to selectively prevent these regions from forming images.
  • the shutter-obstructing region 33 is opened and the shutter-obstructing region 34 is closed, thus yielding an image pattern similar to FIG. 4b.
  • the beams from the source mask are displaced a distance equivalent to half the distance between the lines on the target surface and the shutter-obstructing region MI is opened while the shutter-obstructing region 33 is closed.
  • the resultant composite image of the two exposures is the interdigital pattern shown in FIG. 5b in which the target surface 36 has interdigital line arrays 37 and 38.
  • the requisite displacement can be done by electrostatic or magnetic deflections of the charged particles or by physical displacement of the imaging plate 31 relative to the source mask.
  • the displacement can be obtained by using a source mask 42 having twice as many holes and half the spacing required. These holes may be on the same line, or may be arranged in two rows, 39 and 41, of alternative holes as shown in FIG. 6.
  • Shutters are then used to cover alternate holes for the first exposure. The holes that were uncovered are then covered, and the alternate holes which were covered are opened for the second exposure.
  • the aperture pattern in the source mask 42 consists of the two rows 39 and 41 of alternative holes spaced an appropriate distance apart shown in FIG. 6.
  • An auxiliary set of masks is used between the source mask 42 and the U-shaped imaging plate 31 to automatically provide blanking of the illumination through each of the rows of holes 39 and 41 toa corresponding leg of the U-shaped pattern.
  • the source mask 42 has the two rows of staggered holes 39 and 41.
  • the imaging plate 31 has a U-shaped slit which has arm areas 33 and 34.
  • An auxiliary mask 43 is provided between the source mask 42 and the imaging plate 31.
  • Auxiliary auxiliary mask 43 in FIG. 7 is positioned such that the charged particles passing through the row of holes 41 is prevented from illuminating any of the area 33. Similarly, charged particles passing through any of the holes 39 are prevented by the auxiliary mask 43 from illuminating any of the area 34. Using this arrangement it is possible to produce an interdigitated image pattern such as shown in FIG. 5b with a single exposure.
  • FIG. 8 is similar to FIG. 7, except that a different configuration is utilized for auxiliary mask 44.
  • Auxiliary mask 44 functions in the same manner as auxiliary mask 43 in FIG. 7 and prevents any of the charged particles passing through the holes 39 from illuminating area 33 and prevents any of the charged particles passing through the holes 41 from illuminating any of area 34.
  • the arrangement of FIG. 8 likewise functions to produce an interdigitated pattern such as that shown in FIG. 5!).
  • Image plates having two or more U-shaped slits can be used for simultaneously producing a corresponding number of interdigital patterns by any of the methods cited above.
  • Meander lines can be produced, by using an imaging plate 46 as shown in FIG. 9a which has a slit pattern 46 therein to be used in conjunction with a source mask having one or more holes as an aperture pattern.
  • An imaging plate 48 having a curved slit 49 as shown in FIG. 9b may be used with a source mask having one or more holes to form corresponding images of the curved slit, but having narrow line widths.
  • an imaging plate 51 may have a slit 52 comprising intersecting slits for forming intersecting line images of narrow width.
  • the widths of the various slit segments may be selected or varied appropriately relative to one another.
  • a beam-forming and imaging system comprising: charged particle source means for directing charged particles along a path, a source mask disposed in said path and having at least one aperture therein, a target disposed in said path, an imaging plate disposed in said path between said target and said.
  • said charged particle source means comprises a source of electrons and wherein said target comprises electrosensitive resist.
  • said charged particle source means comprises a source of electrons and wherein said target comprises a substrate having a coating of electron-sensitive resist thereon.
  • said charged particle source means comprises a source of ions and wherein said target comprises ion-sensitive resist.
  • said charged particle source means comprises a source of ions and wherein said target comprises a substrate having a coating of ion-sensitive resist thereon.
  • the apertures in said source mask comprise first and second linear arrays of holes, said first and second linear arrays staggered with respect to each other, said imaging plate having a U-shaped slit with first and second legs, an auxiliary mask disposed in said charged particle path between said source mask and said imaging plate, said auxiliary mask adapted to obstruct said first leg of said U-shaped slit from charged particles passing through said first linear array of holes and to obstruct said second leg of said U-shaped slit from charged particles passing through said second linear array of holes whereby two interdigitated arrays of lines are imaged on said target with each array having the lines thereof connected at one end.
  • the beam-forming and imaging system of claim 1 including a plurality of slits of arbitrary sizes, shapes, and configurations.
  • a beam-forming and imaging system comprising: ion source means for directing ions along a path, a source mask disposed in said path and having at least one aperture therein, a target disposed in said path, an imaging plate disposed in said path between said target and said source mask and comprising an opaque member having at least one slit therein, said slit being substantially long in length and relatively narrow in width but of otherwise arbitrary configuration, a voltage source connected between said imaging plate and said target and adapted to produce an electrical field therebetween, said electrical field convergent about said slit only in a direction parallel to said relatively narrow width, said convergent electrical field present along the substantially long length of said slit whereby the ions are formed into a convergent ion beam impinging upon said target.
  • said target comprises a semiconductor material whereby said convergent ion beam implants ions in said semiconductor material.

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
US73898A 1970-09-21 1970-09-21 Charged particle pattern imaging and exposure system Expired - Lifetime US3614423A (en)

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DE (1) DE2146941A1 (xx)
FR (1) FR2106298A5 (xx)
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NL (1) NL7112975A (xx)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3689782A (en) * 1971-07-01 1972-09-05 Thomson Csf Electronic transducer for a piezoelectric line
US3924136A (en) * 1975-02-18 1975-12-02 Stanford Research Inst Charged particle apodized pattern imaging and exposure system
US4021674A (en) * 1974-09-27 1977-05-03 Siemens Aktiengesellschaft Charged-particle beam optical apparatus for irradiating a specimen in a two-dimensional pattern
DE2821196A1 (de) * 1977-05-16 1978-12-14 Asahi Chemical Ind Duennfilmwiderstand, seine herstellung und verwendung
US4140546A (en) * 1976-09-20 1979-02-20 Siemens Aktiengesellschaft Method of producing a monocrystalline layer on a substrate
FR2497999A1 (fr) * 1981-01-12 1982-07-16 Energy Sciences Inc Procede et appareil de traitement d'objets au moyen d'un faisceau d'electrons converge en ligne fine
US4446373A (en) * 1981-01-12 1984-05-01 Sony Corporation Process and apparatus for converged fine line electron beam treatment objects
US4465934A (en) * 1981-01-23 1984-08-14 Veeco Instruments Inc. Parallel charged particle beam exposure system
US4559102A (en) * 1983-05-09 1985-12-17 Sony Corporation Method for recrystallizing a polycrystalline, amorphous or small grain material
US4592799A (en) * 1983-05-09 1986-06-03 Sony Corporation Method of recrystallizing a polycrystalline, amorphous or small grain material
US4703256A (en) * 1983-05-09 1987-10-27 Sony Corporation Faraday cups
US20130174301A1 (en) * 2010-09-07 2013-07-04 Joseph C. Robinson Method and apparatus for in situ preparation of serial planar surfaces for microscopy

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2739502C3 (de) * 1977-09-02 1980-07-03 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zur Belichtung durch Korpuskularstrahlen-Schattenwurf und Vorrichtung zur Durchführung des Verfahrens
GB8911391D0 (en) * 1989-05-18 1989-07-05 Humphreys Colin J Preparation of substrates

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3491236A (en) * 1967-09-28 1970-01-20 Gen Electric Electron beam fabrication of microelectronic circuit patterns

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3491236A (en) * 1967-09-28 1970-01-20 Gen Electric Electron beam fabrication of microelectronic circuit patterns

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3689782A (en) * 1971-07-01 1972-09-05 Thomson Csf Electronic transducer for a piezoelectric line
US4021674A (en) * 1974-09-27 1977-05-03 Siemens Aktiengesellschaft Charged-particle beam optical apparatus for irradiating a specimen in a two-dimensional pattern
US3924136A (en) * 1975-02-18 1975-12-02 Stanford Research Inst Charged particle apodized pattern imaging and exposure system
US4140546A (en) * 1976-09-20 1979-02-20 Siemens Aktiengesellschaft Method of producing a monocrystalline layer on a substrate
DE2821196A1 (de) * 1977-05-16 1978-12-14 Asahi Chemical Ind Duennfilmwiderstand, seine herstellung und verwendung
US4446373A (en) * 1981-01-12 1984-05-01 Sony Corporation Process and apparatus for converged fine line electron beam treatment objects
FR2497999A1 (fr) * 1981-01-12 1982-07-16 Energy Sciences Inc Procede et appareil de traitement d'objets au moyen d'un faisceau d'electrons converge en ligne fine
US4465934A (en) * 1981-01-23 1984-08-14 Veeco Instruments Inc. Parallel charged particle beam exposure system
US4559102A (en) * 1983-05-09 1985-12-17 Sony Corporation Method for recrystallizing a polycrystalline, amorphous or small grain material
US4592799A (en) * 1983-05-09 1986-06-03 Sony Corporation Method of recrystallizing a polycrystalline, amorphous or small grain material
US4703256A (en) * 1983-05-09 1987-10-27 Sony Corporation Faraday cups
US20130174301A1 (en) * 2010-09-07 2013-07-04 Joseph C. Robinson Method and apparatus for in situ preparation of serial planar surfaces for microscopy
US8878147B2 (en) * 2010-09-07 2014-11-04 Joseph C. Robinson Method and apparatus for in situ preparation of serial planar surfaces for microscopy

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NL7112975A (xx) 1972-03-23
FR2106298A5 (xx) 1972-04-28
DE2146941A1 (de) 1972-03-30
GB1328320A (en) 1973-08-30

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