US3528387A - Ion cleaning and vapor deposition - Google Patents

Ion cleaning and vapor deposition Download PDF

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Publication number
US3528387A
US3528387A US740803*A US3528387DA US3528387A US 3528387 A US3528387 A US 3528387A US 3528387D A US3528387D A US 3528387DA US 3528387 A US3528387 A US 3528387A
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chamber
substrate
ion
vacuum
gun
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US740803*A
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Harold J Hamilton
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Singer General Precision Inc
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Singer General Precision Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5826—Treatment with charged particles
    • C23C14/5833—Ion beam bombardment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3471—Introduction of auxiliary energy into the plasma
    • C23C14/3478—Introduction of auxiliary energy into the plasma using electrons, e.g. triode sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5893—Mixing of deposited material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/36—Gas-filled discharge tubes for cleaning surfaces while plating with ions of materials introduced into the discharge, e.g. introduced by evaporation

Definitions

  • Patented [73] Assignee [54] [ON CLEANING AND VAPOR DEPOSITION 2 Claims, 1 Drawing Fig.
  • Vacuum deposition apparatus for operation at low deposition pressures contains an ion gun in a separate chamber maintained at a higher pressure required for the production of a glow discharge.
  • the ion gun is supplied with an inert gas to maintain its pressure and the ions are emitted into the deposition vacuum chamber through a small port generally aligned toward the substrate.
  • the ions are used to bombard the substrate to clean its surface prior to deposition, or may bombard the substrate during or after the deposition step to improve adherence of the deposited film on the substrate.
  • substrate may be cleaned by ion bombardment andcoatdby vacuumdeposition;
  • the substrate will again collect a contaminant film of oil, gas,
  • the most successful vacuum deposition processes involve elaborate chemical cleaning'of the substrate prior to its insertion in the vacuum chamber.
  • the chemically cleaned substrate is then mounted within the chamber, the vacuum chamber is evacuated to pressure of the order of mm of mercury, the substrate is bombarded with ions produced by a cold cathode discharge to remove as much contaminant as possible, the chamber is then evacuated to'the lowest pressure obtainable, and finally the substrate is heated to a relatively high temperature (several hundred degrees centigrade) for a period of several hours to remove adsorbed gases and other contaminants which have accumulated during the period between the ion bombardment and the evacuation of the chamber to the vacuum deposition pressure.
  • These elaborate procedures are time consuming, costly, not always effective, and impose serious limitations on the nature of the substrate.
  • the substrate is not required to be subjected to elaborate chemical or physical cleaning prior to its insertion in the vacuum chamber.
  • a substrate which has been cleaned with ordinary solvents and with ordinary precaution is attached to a support electrode in the chamber, the chamber is immediately evacuated to a relatively low pressure, such as 10- of mercury, and the substrate surface is cleaned of contaminants, without the application of externally applied heat, by ion bombardment immediately preceding, and during, the deposition of the coating.
  • a relatively low pressure such as 10- of mercury
  • an ion gun is inserted into the chamber.
  • An inert gas, such as argon is metered into the ion gun at a rate sufficient to permit the formation of a glow discharge .within the gun, yet insufficient to raise the chamber pressure above that which is required for vacuum deposition.
  • this invention comprises a main vacuum chamber which is maintained at the relatively low pressure required for vacuum deposition.
  • an ion gun Inserted through the wall of the main chamber is an ion gun having a small hole or exit port in its cathode which is exposed to the main chamber.
  • the ion gun is supplied with an inert gas at a rate sufficient to maintain the internal chamber of the ion gun at a pressure suitable for the formation of a glow discharge within the gun.
  • lons released through the exit port into the main vacuum chamber are rapidly accelerated toward the substrate because of a relatively high negative potential that is applied to the substrate support electrode. These high velocity ions bombard the substrate material and dislodge all contaminants from the surface.
  • the main chamber can be maintained at a pressure low enough to provide a long molecular mean free path and at the same time a sufficiently intense ion beam or spray to decontaminate the substrate surface.
  • Vacuum: deposition may 2 take .-;place ;,during.,g r im- :rnediatelyr after, the ion:bombardmentjofthe.substr e; .by resorting.to:conventional evaporation, techniques.
  • chamber; 10 may be sealed .with an end plate- 12: through which; is rnounted ;a substrate mountingrod .14, which-maybeanyelectricallyconductive, material, such as *aluminunirSince-end .plate 12 is electrically :insulatedfrom other components in -the deposition. equipment ,by. the. glass vacuum chamber 10, it is not essential that mounting rod 14 be insulated fromend plate. 12. However, during the vacuum deposition process, the internal walls of vacuum chamber 10 will become coated and may cause end plate 12to be electrically conductive with other elements in. the deposition equipment. Therefore, it isdesirable that substrate mounting rod 14 I be insulated from end plate 12 by a suitable insulator 16.
  • Substrate 18 may be mounted'within chamber 10 on mounting rod At the opposite port and sealing the end of chamber 10 is another end plate 20 to'which is mounted an ion gun 22,,a pair of electrically insulated conductors to supply electrical current to heater element. 24, and a third electrically insulated conductor which is connected to the cathode26 of ion gun 22.
  • the third port of vacuum chamber 10 is covered and sealed with an end plate 28, through which extends a pipe 30 connectedto vacuum pump 32.
  • ion gun 22 extends through end plate 20 so that its cathode 26 is within vacuum chamber 10.
  • on gun 22 may be constructed from any suitable electrically insulating material, such as glass tubing, and must have suffi-.
  • the end of the ion gun within vacuum chamber 10 is covered with an electrically conductive metallic cap or cathode electrode 26 which contains a small centrally located hole or exit port 27, the diameter of which is determined by the vacuum pump capacity, the desired chamber pressure and ion flux. ln practice, this may be of the order of 0.020 inch. Extending through the central bore of the ion gun to within the distance of approximately V4 inch of cathode 26 is an anode electrode 34 which may be a rod of any suitable electrically conductive material.
  • anode 34 While the principal requirement of the material of anode 34 is that it must be electrically conductive, consideration must be given to the thermal expansion properties of the anode since it must extend through, and be sealed to, the envelope of ion gun 22.
  • a tubing may extend from ion gun 22 to a metering valve 36, which, as subsequently will be explained, is adjusted to provide ion gun 22 with a pressure suitable for the production of a glow discharge between anode 34 and cathode 26.
  • the opposite end of metering valve 36 is connected to a source of inert gas.
  • a substrate 18 is washed to remove excessive contaminants and is mounted in vacuum chamber 10 on substrate mounting rod 14.
  • Vacuum pump 32 is then started and vacuum chamber 10 is evacuated to a relatively low pressure suitable for vacuum deposition. This may be in the order of 10- mm of mercury, or lower.
  • a potential of approximately +500 to 1,000 volts is applied toanode termin al38 through aEiiFfii" gun 22.
  • this pressure within ion gun 22 may be determined by connecting a suitable pressure gauge to the inner chamber or bore of ion gun 22, or may be more simply accomplished by merely increasing the flow of inert gas by the further opening of metering valve 36 until an anode current is observed on milliammeter 37, which is connected between anode 34 and its power source.
  • an anode current it is an indication that ionization within ion gun 22 has commenced and a current flow exists between anode 34 and cathode 26.
  • these ions encounter little or no collisions with neutral gas molecules within vacuum chamber 10 because of the relatively low pressure, and as a consequence they acquire a very high velocity.
  • these ions strike the surface of substrate 18, their momentum and energy is transferred to molecules or atoms at the surface of the substrate, thus causing them to be ejected or sputtered from the surface. Any contaminant film on the surface of substrate 18 will thus be removed.
  • heater element 24 While substrate 18 is being cleaned by ion bombardment from ion gun 22, heater element 24 may be turned on so that sufficient heat is produced to vaporize a small amount of coating material which may be suspended directly from heater element 24 or placed into very close contact with the heating e lement. When the coating material has been boiled and evaporated, metering valve 36 may be closed and all of the voltage potentials removed from their associated terminals. The metallic vapor produced by the boiling of the coating material will then become evenly deposited upon the surface of the substrate 18.
  • An ion bombardment and vacuum deposition apparatus comprising:
  • an ion bombardment gun having an anode electrode disposed within a housing and a cathode electrode forming a wall of said housing, said cathode electrode being located within said chamber and having an exit port to permit the escape of ions from said gun into said chamber; a gaseous feed means into said housing for maintaining said ion mb r me t g n ata su tab e ion a n pr means for applying an ion accelerating electrical potential between the cathode electrode of said ion bombardment gun and said electrically conductive substrate mounting means; and

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Surface Treatment Of Glass (AREA)
US740803*A 1964-03-17 1968-05-24 Ion cleaning and vapor deposition Expired - Lifetime US3528387A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US35245664A 1964-03-17 1964-03-17
US74080368A 1968-05-24 1968-05-24

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US3528387A true US3528387A (en) 1970-09-15

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DE (1) DE1279425B (de)
GB (1) GB1039691A (de)

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3756193A (en) * 1972-05-01 1973-09-04 Battelle Memorial Institute Coating apparatus
US3847114A (en) * 1971-06-09 1974-11-12 Ise Electronics Corp Apparatus for vapor deposition and ion implantation
US3895602A (en) * 1973-02-20 1975-07-22 Thomson Csf Apparatus for effecting deposition by ion bombardment
US3980044A (en) * 1972-03-06 1976-09-14 Balzers Patent Und Beteiligungs Ag Apparatus for depositing thin coats by vaporization under the simultaneous action of an ionized gas
US4013463A (en) * 1975-08-15 1977-03-22 Leder Lewis B Photoreceptor fabrication utilizing AC ion plating
US4085022A (en) * 1976-01-31 1978-04-18 Leybold-Heraeus Gmbh & Co. Kommandit-Gesellschaft Method and apparatus for controlling the removal, by means of ion etching, of a thin layer from a substrate
US4099969A (en) * 1974-10-10 1978-07-11 Xerox Corporation Coating method to improve adhesion of photoconductors
US4123316A (en) * 1975-10-06 1978-10-31 Hitachi, Ltd. Plasma processor
US4199650A (en) * 1978-11-07 1980-04-22 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Modification of the electrical and optical properties of polymers
US4224897A (en) * 1974-01-24 1980-09-30 United Kingdom Atomic Energy Authority Methods of depositing materials on substrates
US4256780A (en) * 1978-11-02 1981-03-17 Ford Motor Company Metallization process
US4278493A (en) * 1980-04-28 1981-07-14 International Business Machines Corporation Method for cleaning surfaces by ion milling
EP0102310A2 (de) * 1982-07-23 1984-03-07 The Goodyear Tire & Rubber Company Beschichtung oder Ätzen mittels Ionenstrahlen für eine Gummi-Metallbindung
US4517066A (en) * 1982-07-23 1985-05-14 The Goodyear Tire & Rubber Company Ion beam deposition or etching re rubber-metal adhesion
EP0160301A2 (de) * 1984-05-01 1985-11-06 Kabushiki Kaisha Toyota Chuo Kenkyusho Verfahren zum Verbinden eines Keramikkörpers
EP0167383A2 (de) * 1984-07-04 1986-01-08 University Of Salford Vorrichtung und Verfahren zum Verändern der Eigenschaften eines Materials
US4747922A (en) * 1986-03-25 1988-05-31 The United States Of America As Represented By The United States Department Of Energy Confined ion beam sputtering device and method
US4778561A (en) * 1987-10-30 1988-10-18 Veeco Instruments, Inc. Electron cyclotron resonance plasma source
US5458754A (en) * 1991-04-22 1995-10-17 Multi-Arc Scientific Coatings Plasma enhancement apparatus and method for physical vapor deposition
US5725674A (en) * 1991-03-18 1998-03-10 Trustees Of Boston University Device and method for epitaxially growing gallium nitride layers
US20040051099A1 (en) * 1991-03-18 2004-03-18 Moustakas Theodore D. Semiconductor device having group III nitride buffer layer and growth layers
US20090258165A1 (en) * 2008-04-14 2009-10-15 United Technologies Corporation Platinum-modified cathodic arc coating

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH288438A (de) * 1950-10-23 1953-01-31 Alois Dr Vogt Verfahren zum Aufbringen von Metallüberzügen auf langgestrecktes Arbeitsgut, sowie Einrichtung zur Durchführung des Verfahrens.
GB942549A (en) * 1959-04-03 1963-11-27 Int Computers & Tabulators Ltd Improvements in or relating to information storage devices
NL266760A (de) * 1960-07-08

Cited By (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3847114A (en) * 1971-06-09 1974-11-12 Ise Electronics Corp Apparatus for vapor deposition and ion implantation
US3980044A (en) * 1972-03-06 1976-09-14 Balzers Patent Und Beteiligungs Ag Apparatus for depositing thin coats by vaporization under the simultaneous action of an ionized gas
US3756193A (en) * 1972-05-01 1973-09-04 Battelle Memorial Institute Coating apparatus
US3895602A (en) * 1973-02-20 1975-07-22 Thomson Csf Apparatus for effecting deposition by ion bombardment
US4224897A (en) * 1974-01-24 1980-09-30 United Kingdom Atomic Energy Authority Methods of depositing materials on substrates
US4099969A (en) * 1974-10-10 1978-07-11 Xerox Corporation Coating method to improve adhesion of photoconductors
US4013463A (en) * 1975-08-15 1977-03-22 Leder Lewis B Photoreceptor fabrication utilizing AC ion plating
US4123316A (en) * 1975-10-06 1978-10-31 Hitachi, Ltd. Plasma processor
US4085022A (en) * 1976-01-31 1978-04-18 Leybold-Heraeus Gmbh & Co. Kommandit-Gesellschaft Method and apparatus for controlling the removal, by means of ion etching, of a thin layer from a substrate
US4256780A (en) * 1978-11-02 1981-03-17 Ford Motor Company Metallization process
US4199650A (en) * 1978-11-07 1980-04-22 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Modification of the electrical and optical properties of polymers
US4278493A (en) * 1980-04-28 1981-07-14 International Business Machines Corporation Method for cleaning surfaces by ion milling
EP0102310A2 (de) * 1982-07-23 1984-03-07 The Goodyear Tire & Rubber Company Beschichtung oder Ätzen mittels Ionenstrahlen für eine Gummi-Metallbindung
US4517066A (en) * 1982-07-23 1985-05-14 The Goodyear Tire & Rubber Company Ion beam deposition or etching re rubber-metal adhesion
EP0102310A3 (de) * 1982-07-23 1988-01-13 The Goodyear Tire & Rubber Company Beschichtung oder Ätzen mittels Ionenstrahlen für eine Gummi-Metallbindung
EP0160301A3 (en) * 1984-05-01 1986-10-22 Kabushiki Kaisha Toyota Chuo Kenkyusho Method of bonding ceramic article
EP0160301A2 (de) * 1984-05-01 1985-11-06 Kabushiki Kaisha Toyota Chuo Kenkyusho Verfahren zum Verbinden eines Keramikkörpers
EP0167383A2 (de) * 1984-07-04 1986-01-08 University Of Salford Vorrichtung und Verfahren zum Verändern der Eigenschaften eines Materials
EP0167383A3 (de) * 1984-07-04 1987-09-09 University Of Salford Vorrichtung und Verfahren zum Verändern der Eigenschaften eines Materials
US4747922A (en) * 1986-03-25 1988-05-31 The United States Of America As Represented By The United States Department Of Energy Confined ion beam sputtering device and method
US4778561A (en) * 1987-10-30 1988-10-18 Veeco Instruments, Inc. Electron cyclotron resonance plasma source
US20040051099A1 (en) * 1991-03-18 2004-03-18 Moustakas Theodore D. Semiconductor device having group III nitride buffer layer and growth layers
US5725674A (en) * 1991-03-18 1998-03-10 Trustees Of Boston University Device and method for epitaxially growing gallium nitride layers
US20040053478A1 (en) * 1991-03-18 2004-03-18 Moustakas Theodore D. Method of making a semiconductor device with exposure of sapphire substrate to activated nitrogen
US6953703B2 (en) 1991-03-18 2005-10-11 The Trustees Of Boston University Method of making a semiconductor device with exposure of sapphire substrate to activated nitrogen
US20070120144A1 (en) * 1991-03-18 2007-05-31 The Trustees Of Boston University Semiconductor device having group III nitride buffer layer and growth layers
US7235819B2 (en) 1991-03-18 2007-06-26 The Trustees Of Boston University Semiconductor device having group III nitride buffer layer and growth layers
US7663157B2 (en) 1991-03-18 2010-02-16 The Trustees Of Boston University Semiconductor device having group III nitride buffer layer and growth layers
US6139964A (en) * 1991-04-22 2000-10-31 Multi-Arc Inc. Plasma enhancement apparatus and method for physical vapor deposition
US5458754A (en) * 1991-04-22 1995-10-17 Multi-Arc Scientific Coatings Plasma enhancement apparatus and method for physical vapor deposition
US20090258165A1 (en) * 2008-04-14 2009-10-15 United Technologies Corporation Platinum-modified cathodic arc coating
US8968528B2 (en) * 2008-04-14 2015-03-03 United Technologies Corporation Platinum-modified cathodic arc coating

Also Published As

Publication number Publication date
GB1039691A (en) 1966-08-17
DE1279425B (de) 1968-10-03

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