US3525680A - Method and apparatus for the radio frequency sputtering of dielectric materials - Google Patents

Method and apparatus for the radio frequency sputtering of dielectric materials Download PDF

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Publication number
US3525680A
US3525680A US514853A US3525680DA US3525680A US 3525680 A US3525680 A US 3525680A US 514853 A US514853 A US 514853A US 3525680D A US3525680D A US 3525680DA US 3525680 A US3525680 A US 3525680A
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Prior art keywords
radio frequency
sputtering
electrode
capacitor
source
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US514853A
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English (en)
Inventor
Pieter D Davidse
Walter J Kleinfelder
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International Business Machines Corp
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International Business Machines Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/085—Vapour deposited
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields

Definitions

  • the present invention relates to an improved method for sputtering dielectric materials.
  • the invention relates to an improvement in the radio frequency sputtering of dielectric materials in such a way that smooth, defect-free films of the dielectric are deposited onto a substrate.
  • a primary object of the present invention is to provide an improved method for radio frequency sputtering of insulating materials, such as glasses, which overcomes the disadvantages of prior techniques and results in the deposition of smooth, defect-free, high quality insulating films.
  • FIG. 1 is a vertical, partly sectional, somewhat schematic view of a sputtering system embodying the invention.
  • FIG. 2 is a diagram of an electric circuit useful in the sputtering system of the invention.
  • the invention is based upon the discovery that smooth, high quality insulating films can be deposited 3,525,686 Patented Aug. 25, 1970 by radio frequency sputtering of dielectric materials by incorporating in the system a capacitor connected in series between the electrode associated with the source of insulating material and the output terminal of a radio frequency generator.
  • FIG. 1 shows an. exemplary form of sputtering apparatus incorporating the principles of the present invention
  • a gas ionization chamber is enclosed by an envelope 10 in the form of a bell jar made of suitable material, such as Pyrex glass, which is removably mounted on a base plate 12.
  • a gasket 11 is disposed between the jar 10 and plate 12 to provide a vacuum seal.
  • a suitable gas, such as argon, supplied by a source 13, is maintained at a desired pressure in the enclosure by means of a vacuum pump 14.
  • an electrode structure generally designated 16
  • a substrate support structure generally designated 18.
  • a target 21 consisting of the dielectric material which is to be sputtered, is mounted on or positioned adjacent to a metal electrode 22.
  • This electrode 22 is insulated from a hollow supporting column or post 24, the bottom flanged portion of which is secured to the base plate 12.
  • the post 24 is electrically conductive, and being in direct electrical contact with the base plate 12 (which is grounded as indicated in the drawings), the post 24 is maintained at ground potential.
  • Supported on the upper flanged end of the cylindrical post 24 is a metallic shield 26 that partially encloses the electrode 22 adjoining the target 21 and protects the electrode from unwanted sputtering.
  • Insulating bushing 25 insulates shield 26 and post 24 from electrode 22.
  • Conductor 27 passes through base 12 and is electrically connected with electrode 22.
  • the electrode assembly may also be provided with cooling means, not shown, to control the temperature during operation.
  • Substrate support assembly 18 comprises a support plate 29 on which substrate 30 is mounted by any suitable means. Plate 29 is secured to the underside of plate 31 which is supported by posts 32, through which plate 29 is electrically connected to grounded base plate 12.
  • cooling coil 35 is positioned in heat exchange relationship with metal plate 31.
  • a cooling fluid is circulated through coil 35 by input and return conduits, 36 and 37, respectively.
  • the glow discharge to a magnetic field. This may be done by stacking a set of toroidal permanent magnets above plate 31 to provide a steady magnetic field along the vertical axis (arrow 92) of the toroids, normal to the surface of target 21.
  • the direction of the magnetic field, up or down, is immaterial.
  • Electrode 22 and conductor 27 are electrically connected by conductor 50 with the output of a radio frequency power source 20.
  • a capacitor 60 Connected in series between the electrode 22 and the radio frequency power source 20 is a capacitor 60.
  • Incorporation'of capacitor 60 in the sputtering system, as shown and described, is the primary feature of the invention.
  • any conventional RF power source 20 may be employed in the described sputtering system.
  • the power source 20 may comprise a conventional RF power supply 80 and matching circuit 81.
  • the output of power source 20 is connected electrically with capacitor 60 and thence with electrode 22.
  • the ionization chamber formed by jar 10 and base 12 is evacuated 'by vacuum pump 14 and an ionizable gas such as argon, is bled in through line 13 to maintain the desired pressure in the chamber.
  • a source of dielectric material and a substrate are positioned in the chamber substantially as shown in FIG. 1.
  • An RF power source is then actuated and the output is passed through capacitor 60 to the electrode 22 associated with the source of dielectric material.
  • the exact conditions of pressure, temperature, power input, etc. are not critical, and may be varied to give the optimum in film thickness and quality for the specific system employed.
  • fields having a strength of about 100 gauss are eiTective.
  • fused quartz has been sputtered under the following conditions:
  • any suitable dielectric may be deposited in accordance with the invention, including, for example, fused quartz, borosilicate glasses, calciumaluminosilicate glasses, refractory metal oxides, such as alumina, minerals, such as mullite, etc.
  • the apparatus consisting essentially of a lowpressure ionization chamber adapted to contain the dielectric material and the substrate, a source of gas, a source of radio frequency power for producing a glow discharge in said gas in said chamber and a diode system consisting essentially of a radio frequency electrode associated with said dielectric material and electrically connected with the output of said source of radio frequency power, and a second electrode the improvement consisting essentially of a capacitor electrically connected in series between said radio frequency electrode and the output of said source of radio frequency power, and positioned outside said ionization chamber, said capacitor having a value of from to 20,000 pf.
  • the apparatus of claim 1 further including means for subjecting said glow discharge to a magnetic field during sputtering.
  • the improvement c0nsisting essentially of stimulating said glow discharge by passing the current from the output of said radio frequency power source through a capacitor positioned outside said ionization chamber and thence to a diode system consisting essentially of an electrode associated with said source of dielectric material, said capacitor having a value of from 100 to 20,000 pf. and a second electrode.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Power Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physical Vapour Deposition (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
US514853A 1965-12-20 1965-12-20 Method and apparatus for the radio frequency sputtering of dielectric materials Expired - Lifetime US3525680A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US51485365A 1965-12-20 1965-12-20
US51482765A 1965-12-20 1965-12-20

Publications (1)

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US3525680A true US3525680A (en) 1970-08-25

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US514853A Expired - Lifetime US3525680A (en) 1965-12-20 1965-12-20 Method and apparatus for the radio frequency sputtering of dielectric materials

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US (1) US3525680A (el)
JP (1) JPS4327930B1 (el)
BE (1) BE690690A (el)
CH (2) CH469101A (el)
DE (2) DE1515309B2 (el)
FR (1) FR1505162A (el)
GB (2) GB1118758A (el)
NL (1) NL6617765A (el)
SE (1) SE334083B (el)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3860507A (en) * 1972-11-29 1975-01-14 Rca Corp Rf sputtering apparatus and method
US3904506A (en) * 1972-11-13 1975-09-09 Shatterproof Glass Corp Apparatus for continuous production of sputter-coated glass products
US3916523A (en) * 1969-09-29 1975-11-04 Warner Lambert Co Coated razor blade
US3925182A (en) * 1973-09-25 1975-12-09 Shatterproof Glass Corp Method for continuous production of sputter-coated glass products
US3968018A (en) * 1969-09-29 1976-07-06 Warner-Lambert Company Sputter coating method
US4043889A (en) * 1976-01-02 1977-08-23 Sperry Rand Corporation Method of and apparatus for the radio frequency sputtering of a thin film
US4170662A (en) * 1974-11-05 1979-10-09 Eastman Kodak Company Plasma plating
US4693805A (en) * 1986-02-14 1987-09-15 Boe Limited Method and apparatus for sputtering a dielectric target or for reactive sputtering
US5733511A (en) * 1994-06-21 1998-03-31 The Boc Group, Inc. Power distribution for multiple electrode plasma systems using quarter wavelength transmission lines

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2371524A1 (fr) * 1976-11-18 1978-06-16 Alsthom Atlantique Procede de depot d'une couche mince par decomposition d'un gaz dans un plasma
JPS6037188B2 (ja) * 1981-08-27 1985-08-24 三菱マテリアル株式会社 スパツタリング装置
US4498071A (en) * 1982-09-30 1985-02-05 Dale Electronics, Inc. High resistance film resistor
GB2140460B (en) * 1983-05-27 1986-06-25 Dowty Electronics Ltd Insulated metal substrates

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3021271A (en) * 1959-04-27 1962-02-13 Gen Mills Inc Growth of solid layers on substrates which are kept under ion bombardment before and during deposition
US3233137A (en) * 1961-08-28 1966-02-01 Litton Systems Inc Method and apparatus for cleansing by ionic bombardment
US3347772A (en) * 1964-03-02 1967-10-17 Schjeldahl Co G T Rf sputtering apparatus including a capacitive lead-in for an rf potential

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3021271A (en) * 1959-04-27 1962-02-13 Gen Mills Inc Growth of solid layers on substrates which are kept under ion bombardment before and during deposition
US3233137A (en) * 1961-08-28 1966-02-01 Litton Systems Inc Method and apparatus for cleansing by ionic bombardment
US3347772A (en) * 1964-03-02 1967-10-17 Schjeldahl Co G T Rf sputtering apparatus including a capacitive lead-in for an rf potential

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3916523A (en) * 1969-09-29 1975-11-04 Warner Lambert Co Coated razor blade
US3968018A (en) * 1969-09-29 1976-07-06 Warner-Lambert Company Sputter coating method
US3904506A (en) * 1972-11-13 1975-09-09 Shatterproof Glass Corp Apparatus for continuous production of sputter-coated glass products
US3860507A (en) * 1972-11-29 1975-01-14 Rca Corp Rf sputtering apparatus and method
US3925182A (en) * 1973-09-25 1975-12-09 Shatterproof Glass Corp Method for continuous production of sputter-coated glass products
US4170662A (en) * 1974-11-05 1979-10-09 Eastman Kodak Company Plasma plating
US4043889A (en) * 1976-01-02 1977-08-23 Sperry Rand Corporation Method of and apparatus for the radio frequency sputtering of a thin film
US4693805A (en) * 1986-02-14 1987-09-15 Boe Limited Method and apparatus for sputtering a dielectric target or for reactive sputtering
US5733511A (en) * 1994-06-21 1998-03-31 The Boc Group, Inc. Power distribution for multiple electrode plasma systems using quarter wavelength transmission lines

Also Published As

Publication number Publication date
GB1118759A (en) 1968-07-03
GB1118758A (en) 1968-07-03
NL6617765A (el) 1967-06-21
DE1515310A1 (de) 1969-08-14
SE334083B (el) 1971-04-05
CH471241A (de) 1969-04-15
CH469101A (de) 1969-02-28
BE690690A (el) 1967-05-16
JPS4327930B1 (el) 1968-12-02
DE1515309A1 (de) 1969-07-31
DE1515309B2 (de) 1977-11-10
FR1505162A (fr) 1967-12-08

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