US3511609A - Single crystal growing apparatus - Google Patents

Single crystal growing apparatus Download PDF

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Publication number
US3511609A
US3511609A US611449A US3511609DA US3511609A US 3511609 A US3511609 A US 3511609A US 611449 A US611449 A US 611449A US 3511609D A US3511609D A US 3511609DA US 3511609 A US3511609 A US 3511609A
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US
United States
Prior art keywords
seed crystal
suspending means
members
vessel
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US611449A
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English (en)
Inventor
Ichiro Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Application granted granted Critical
Publication of US3511609A publication Critical patent/US3511609A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/106—Seed pulling including sealing means details
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1064—Seed pulling including a fully-sealed or vacuum-maintained crystallization chamber [e.g., ampoule]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Definitions

  • the present invention relates to an apparatus for grow ing single crystals by causing a seed crystal suspended by a suspending means to touch the surface of mother liquor and gradually drawing up the seed crystal while rotating the same so as to progressively crystalize the mother liquor, and more particularly, to an apparatus for growing semiconductive single crystals.
  • the seed crystal suspending means consists of a bar member whose stroke usually extends to about 25 centimeters, so that when the bar member is drawn up its lower end is brought into pendulum motion or sometimes into gyroscopic mo tion in case torque is imparted to the bar member, and as a result the grown crystal hanging down from the bar member tends to break or the direction of growth sometimes deviates in an undesired manner.
  • FIGS. 3 to 5 show cross sections similar to FIG. 2 illustrating a modification of the seed crystal suspending means.
  • the reference numeral 1 indicates a gas-tight vessel on the bottom of which is disposed a crucible 2 filled with a mother liquor to be grown into a crystal.
  • the gas-tight vessel 1 is provided with a suitable window for inserting and removing the crucible into and out of the vessel -1.
  • the vessel 1 may be evacuated by an evacuating means and the evacuated vessel may in turn be filled with nonoxidizing gas such as nitrogen, hydrogen and the like.
  • the vessel 1 is further provided with an aperture 3 on its top wall directly above the crucible 2 for installing therein a hollow sleeve member 4 such that it can be rotated about its vertical axis.
  • the sleeve member 4 is formed with an outer annular groove on its portion extending above the top wall of the vessel 1 to receive an endless belt 5 to transmit power from an electric motor 6 mounted on top of the vessel 1 through a transmission line including a reduction mechanism 7 and a pulley 9 fixedly mounted on a vertical shaft 8 journalled in bearings 10 and 11 at both upper an lower ends. It is preferred to install the hollow sleeve member 4 in the aperture 3 through a bearing. In such a case, however, it is necessary to provide packing means between the bearing and the sleeve and between the bearing and the brim of the aperture in order to achieve gas-tight seal.
  • the crucible 2 is preferably made of quartz surrounded by an outer receptacle 2a molded from carbon and serving as the heater energized through carbon members 2b to indirectly heat the crucible 2 to keep mother liquor filled therein in molten state.
  • pendulum motion and gyroscopic motion of the suspending means caused by rotating or vertically moving it and vibratory motions externally transmitted to it are all absorbed between the spherical members and the connecting pins, so that the transmission of any 0bjectionable vibration, pendulum motion or gyroscopic motion through the suspending means to the seed crystal may be prevented and only torque imparted to spherical members in frictional engagement with the sleeve member 4 in rotation is transmitted to the lower hanging portion of the seed crystal suspending means.
  • the portion of the seed crystal suspending means below the sleeve member 4 extends vertically and makes exact rotation about its vertical center line, while it is being gradually drawn up by the rotation of the drum 6, with the seed crystal being attached at. its lower end, so that an ideal growth of a single crystal may be obtained.
  • the adjustment of the frictional force interacting between the sleeve member and the spherical members of the suspending means may be made by altering the inner diameter of the sleeve lining by applying a force to its upper end to subject it to a plastic deformation to such an extent as to compensate the wear.
  • each of the spherical members 12a has a partition wall which lies in a direction substantially perpendicular to the direction of alignment of the connecting pins 13a in order to more positively maintain the interior of the vessel vacuum tight which otherwise tend to be broken due to the openings formed in the respective spherical members, through which the connecting pins are universally journalled to the spherical members.
  • an explosive is first inserted in the tip end of the closed hollow portion of the connecting pin and such explosive containing portion of the pin is then placed in the hollow portion 130 of the other spherical member portion, where said pin portion is expanded by means of explosion molding, whereby two of the members are universally journalled. This operation is repeated to form a sufficient length of serially connected members of the seed crystal suspend ing means.
  • At least the spherical members or member portions are made of a material having a heatproof property at about 1100 C., such as stainless steel, Inconel, platinum or the like.
  • the rosary-type suspension means has been described as having sphero-cylindrical or spherical members. The shape of these members will be better understood from the draw- What is claimed is:
  • a single crystal growing apparatus comprising in combination:
  • a seed crystal suspending means vertically moveable and rotatably arranged above said gas-tight crucible vessel for implanting a seed in said mother liquor to produce a single crystal, said seed crystal suspending means having a plurality of spherical or sphero-cylindrical members serially connected to one another by connecting pins, each of which has both ends universally joined to two adjacent members so that the centers of all suspended members lie along a vertical straight line;
  • a single crystal growing apparatus comprising in combination; a gastight vessel, a crucible for holding a mother liquor disposed in said vessel, a seed crystal suspending means vertically and rotatably arranged above said crucible and which has a plurality of spherical or sphere-cylindrical members serially connected to one another and universally joined by connecting pins, so that the centers of all suspended members lie along a vertical straight line, means to vertically lift said suspending means including a rotary drum on which the upper portion of said seed crystal suspending means is wound, and means to rotate said suspending means from above said crucible including a hollow sleeve with a lining therein with a large friction coefiicient property, said hollow sleeve being rotatable about a vertical axis, said suspending means passing through the interior hollow portion of said hollow sleeve so that a torque is imparted to said suspending means through frictional force acting between said hollow sleeve and said member of said suspending

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
US611449A 1966-01-26 1967-01-24 Single crystal growing apparatus Expired - Lifetime US3511609A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1966005818U JPS4613544Y1 (enrdf_load_stackoverflow) 1966-01-26 1966-01-26

Publications (1)

Publication Number Publication Date
US3511609A true US3511609A (en) 1970-05-12

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Application Number Title Priority Date Filing Date
US611449A Expired - Lifetime US3511609A (en) 1966-01-26 1967-01-24 Single crystal growing apparatus

Country Status (3)

Country Link
US (1) US3511609A (enrdf_load_stackoverflow)
JP (1) JPS4613544Y1 (enrdf_load_stackoverflow)
NL (2) NL6701211A (enrdf_load_stackoverflow)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4167554A (en) * 1974-10-16 1979-09-11 Metals Research Limited Crystallization apparatus having floating die member with tapered aperture
US4190630A (en) * 1978-01-03 1980-02-26 Vsesojuzny Nauchno-Isslekovatelsky Institut Monokristallov Stsintillyatsionnykh Materialov I Osobo Chistykh Khimicheskikh Veschestv Apparatus for pulling single crystals from melt
US4301120A (en) * 1980-09-02 1981-11-17 Ferrofluidics Corporation Chain introduction means for a crystal growth pulling head
US4367199A (en) * 1980-06-14 1983-01-04 Leybold Heraeus Gmbh Apparatus having coilable pulling element for drawing a monocrystal from a crucible with adjustable speed
US4371502A (en) * 1980-02-08 1983-02-01 Ferrofluidics Corporation Crystal growing furnace pulling head
FR2562915A1 (fr) * 1984-04-14 1985-10-18 Leybold Heraeus Gmbh & Co Kg Porte-cristal pour machine a tirer un cristal d'un bain de materiau fondu au moyen d'un organe de tirage se laissant enrouler
US5126113A (en) * 1990-03-30 1992-06-30 Shin-Etsu Handotai Co., Ltd. Apparatus for producing czochralski-grown single crystals
US5634956A (en) * 1995-06-19 1997-06-03 Samjo Industrial Co., Ltd. Bioceramics used in artificial bone and artificial dental implants and the process for the preparation thereof
US5935328A (en) * 1997-11-25 1999-08-10 Memc Electronic Materials, Inc. Apparatus for use in crystal pulling
US20110185658A1 (en) * 2010-01-29 2011-08-04 Cerny Ronald N Synthetic floor tile having partially-compliant support structure

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2683676A (en) * 1950-01-13 1954-07-13 Bell Telephone Labor Inc Production of germanium rods having longitudinal crystal boundaries
US2889240A (en) * 1956-03-01 1959-06-02 Rca Corp Method and apparatus for growing semi-conductive single crystals from a melt
US3154384A (en) * 1960-04-13 1964-10-27 Texas Instruments Inc Apparatus for growing compound semiconductor crystal
US3188182A (en) * 1961-06-29 1965-06-08 Gen Electric Use of the working material as part of the crystal making apparatus
US3234009A (en) * 1953-02-14 1966-02-08 Siemens Ag Method and device for the successive zone melting and resolidifying of extremely pure substances
US3238024A (en) * 1961-03-14 1966-03-01 Knapsack Ag Method and apparatus for the zonemelting of nonconductive or poorly conductive substances
US3427211A (en) * 1965-07-28 1969-02-11 Ibm Process of making gallium phosphide dendritic crystals with grown in p-n light emitting junctions

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2683676A (en) * 1950-01-13 1954-07-13 Bell Telephone Labor Inc Production of germanium rods having longitudinal crystal boundaries
US3234009A (en) * 1953-02-14 1966-02-08 Siemens Ag Method and device for the successive zone melting and resolidifying of extremely pure substances
US2889240A (en) * 1956-03-01 1959-06-02 Rca Corp Method and apparatus for growing semi-conductive single crystals from a melt
US3154384A (en) * 1960-04-13 1964-10-27 Texas Instruments Inc Apparatus for growing compound semiconductor crystal
US3238024A (en) * 1961-03-14 1966-03-01 Knapsack Ag Method and apparatus for the zonemelting of nonconductive or poorly conductive substances
US3188182A (en) * 1961-06-29 1965-06-08 Gen Electric Use of the working material as part of the crystal making apparatus
US3427211A (en) * 1965-07-28 1969-02-11 Ibm Process of making gallium phosphide dendritic crystals with grown in p-n light emitting junctions

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4167554A (en) * 1974-10-16 1979-09-11 Metals Research Limited Crystallization apparatus having floating die member with tapered aperture
US4190630A (en) * 1978-01-03 1980-02-26 Vsesojuzny Nauchno-Isslekovatelsky Institut Monokristallov Stsintillyatsionnykh Materialov I Osobo Chistykh Khimicheskikh Veschestv Apparatus for pulling single crystals from melt
US4371502A (en) * 1980-02-08 1983-02-01 Ferrofluidics Corporation Crystal growing furnace pulling head
US4367199A (en) * 1980-06-14 1983-01-04 Leybold Heraeus Gmbh Apparatus having coilable pulling element for drawing a monocrystal from a crucible with adjustable speed
US4301120A (en) * 1980-09-02 1981-11-17 Ferrofluidics Corporation Chain introduction means for a crystal growth pulling head
FR2562915A1 (fr) * 1984-04-14 1985-10-18 Leybold Heraeus Gmbh & Co Kg Porte-cristal pour machine a tirer un cristal d'un bain de materiau fondu au moyen d'un organe de tirage se laissant enrouler
US4738832A (en) * 1984-04-14 1988-04-19 Leybold-Heraeus Gmbh Crystal holder
US5126113A (en) * 1990-03-30 1992-06-30 Shin-Etsu Handotai Co., Ltd. Apparatus for producing czochralski-grown single crystals
US5634956A (en) * 1995-06-19 1997-06-03 Samjo Industrial Co., Ltd. Bioceramics used in artificial bone and artificial dental implants and the process for the preparation thereof
US5935328A (en) * 1997-11-25 1999-08-10 Memc Electronic Materials, Inc. Apparatus for use in crystal pulling
US20110185658A1 (en) * 2010-01-29 2011-08-04 Cerny Ronald N Synthetic floor tile having partially-compliant support structure

Also Published As

Publication number Publication date
DE1519916B1 (de) 1970-10-01
NL128651C (enrdf_load_stackoverflow)
JPS4613544Y1 (enrdf_load_stackoverflow) 1971-05-14
NL6701211A (enrdf_load_stackoverflow) 1967-07-27

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