US3442823A - Semiconductor crystals of fibrous structure and method of their manufacture - Google Patents
Semiconductor crystals of fibrous structure and method of their manufacture Download PDFInfo
- Publication number
- US3442823A US3442823A US501918A US3442823DA US3442823A US 3442823 A US3442823 A US 3442823A US 501918 A US501918 A US 501918A US 3442823D A US3442823D A US 3442823DA US 3442823 A US3442823 A US 3442823A
- Authority
- US
- United States
- Prior art keywords
- phase
- fibrous
- semiconductor
- inclusions
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title description 78
- 239000013078 crystal Substances 0.000 title description 55
- 238000000034 method Methods 0.000 title description 25
- 238000004519 manufacturing process Methods 0.000 title description 19
- 239000000463 material Substances 0.000 description 36
- 239000000835 fiber Substances 0.000 description 35
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 25
- 239000000155 melt Substances 0.000 description 17
- 238000004857 zone melting Methods 0.000 description 15
- 238000007710 freezing Methods 0.000 description 14
- 238000004581 coalescence Methods 0.000 description 13
- 150000001875 compounds Chemical class 0.000 description 12
- 230000008014 freezing Effects 0.000 description 12
- 239000000203 mixture Substances 0.000 description 12
- 239000000126 substance Substances 0.000 description 11
- 230000005496 eutectics Effects 0.000 description 10
- 238000003475 lamination Methods 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 8
- 238000002194 freeze distillation Methods 0.000 description 8
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- 229910000673 Indium arsenide Inorganic materials 0.000 description 7
- 239000004020 conductor Substances 0.000 description 7
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 7
- 230000000875 corresponding effect Effects 0.000 description 6
- 229910052732 germanium Inorganic materials 0.000 description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 229910005542 GaSb Inorganic materials 0.000 description 5
- 230000005291 magnetic effect Effects 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 230000000737 periodic effect Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229910052748 manganese Inorganic materials 0.000 description 4
- 239000011572 manganese Substances 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000004927 fusion Effects 0.000 description 3
- 239000008187 granular material Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910019963 CrSb Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- 229910016964 MnSb Inorganic materials 0.000 description 2
- ZTNAMCOKKZMLMJ-UHFFFAOYSA-N [Cr].[Cr].[As] Chemical compound [Cr].[Cr].[As] ZTNAMCOKKZMLMJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000374 eutectic mixture Substances 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000012768 molten material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 241000381875 Argiolestes muller Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- -1 InSb Chemical class 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 238000005162 X-ray Laue diffraction Methods 0.000 description 1
- 240000008042 Zea mays Species 0.000 description 1
- 235000005824 Zea mays ssp. parviglumis Nutrition 0.000 description 1
- 235000002017 Zea mays subsp mays Nutrition 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- SBLMIPWAMVAONB-UHFFFAOYSA-N antimony;iron(3+) Chemical compound [Fe+3].[Sb] SBLMIPWAMVAONB-UHFFFAOYSA-N 0.000 description 1
- NMLUQMQPJQWTFK-UHFFFAOYSA-N arsanylidynecobalt Chemical compound [As]#[Co] NMLUQMQPJQWTFK-UHFFFAOYSA-N 0.000 description 1
- 150000001648 bromium Chemical class 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 238000010000 carbonizing Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- QWYVKZJDGBMHFE-UHFFFAOYSA-N cobalt gallium Chemical compound [Co].[Ga] QWYVKZJDGBMHFE-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 235000005822 corn Nutrition 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 230000005307 ferromagnetism Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- JSUIEZRQVIVAMP-UHFFFAOYSA-N gallium iron Chemical compound [Fe].[Ga] JSUIEZRQVIVAMP-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- FDKAYGUKROYPRO-UHFFFAOYSA-N iron arsenide Chemical compound [Fe].[As]=[Fe] FDKAYGUKROYPRO-UHFFFAOYSA-N 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B21/00—Unidirectional solidification of eutectic materials
- C30B21/04—Unidirectional solidification of eutectic materials by zone-melting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/107—Melt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/115—Orientation
Definitions
- Ordinary polycrystals consist of a coalesced bunch of randomly oriented and randomly shaped grains.
- the polycrystals according to the invention are formed of elongated fibrous grains or fibers.
- the longitudinal dimension of these monocrystalline fibers may be 1 cm. for example but, in general, is often much longer. Lengths of cm. and more have been measured.
- the fiber diameter varies between values in the order of magnitude of 1 micron and a few millimeters.
- the seed need not be elongated in any particular direction but it must be fused to the bar of semiconductor material with the axes of the fibrous crystallites in the seed oriented longitudinally of the bar.
- the fibrous crystallites in the polycrystalline seed are elongated twin-type monocrystals.
- a temperature gradient can be formed at the liquid-to-solid boundary which extends parallel to the crystal growing direction at least on the average, taken over the entire boundary.
- Such a liquid-to-solid boundary can be maintained by suitable temperature control and observing a suitable crystallization rate at the growing front of the solidifying crystal, these expedients being known as such.
- the inclusions are uniformly distributed within the polycrystal over its entire cross section and over its entire length.
- Inclusions of needle-shaped configuration may have a thickness in the order of magnitude of 1 micron and a length in the order of 50 microns.
- greatly different dimensions of thickness and length have been observed, depending upon the specific properties of the particular two-phase system and also depending upon the freezing method employed.
- needle thicknesses of 0.1 up to 10 microns or more have been measured with different two-phase compositions.
- the needles may have a length ten times or more larger or smaller than mentioned above, although within one and the same crystal made by a single uniform method and employing a uniform rate of freezing, only slight variations about an average thickness and length of the needles have been observed.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0096033 | 1965-03-18 | ||
| DES0096034 | 1965-03-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US3442823A true US3442823A (en) | 1969-05-06 |
Family
ID=25998003
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US501918A Expired - Lifetime US3442823A (en) | 1965-03-18 | 1965-10-22 | Semiconductor crystals of fibrous structure and method of their manufacture |
Country Status (8)
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3624467A (en) * | 1969-02-17 | 1971-11-30 | Texas Instruments Inc | Monolithic integrated-circuit structure and method of fabrication |
| US3651385A (en) * | 1968-09-18 | 1972-03-21 | Sony Corp | Semiconductor device including a polycrystalline diode |
| US3711718A (en) * | 1969-12-09 | 1973-01-16 | Siemens Ag | Apparatus for detecting infrared radiation |
| US3925803A (en) * | 1972-07-13 | 1975-12-09 | Sony Corp | Oriented polycrystal jfet |
| US3953876A (en) * | 1973-06-07 | 1976-04-27 | Dow Corning Corporation | Silicon solar cell array |
| US4532000A (en) * | 1983-09-28 | 1985-07-30 | Hughes Aircraft Company | Fabrication of single crystal fibers from congruently melting polycrystalline fibers |
| US4722764A (en) * | 1983-09-20 | 1988-02-02 | Wacker-Chemitronic Gesellschaft Fur Elektronic-Grundstoffe Mbh | Method for the manufacture of dislocation-free monocrystalline silicon rods |
| US4984037A (en) * | 1986-12-11 | 1991-01-08 | Gte Laboratories Incorporated | Semiconductor device with conductive rectifying rods |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE879975A (fr) * | 1978-12-04 | 1980-03-03 | Colburn William A | Dispositif electronique contenant une matiere composite et son procede de realisation |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2739088A (en) * | 1951-11-16 | 1956-03-20 | Bell Telephone Labor Inc | Process for controlling solute segregation by zone-melting |
| US3259582A (en) * | 1959-11-30 | 1966-07-05 | Siemens Ag | Mix-crystal semiconductor devices |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE399896C (de) * | 1924-07-31 | Frederick Shand Goucher Dr | Verfahren zur Herstellung von Metalldraehten oder -faeden, insbesondere aus schwerschmelzbaren Metallen |
-
1965
- 1965-03-18 DE DE19651519868 patent/DE1519868B2/de active Pending
- 1965-03-18 DE DE19651519869 patent/DE1519869B1/de active Pending
- 1965-10-22 US US501918A patent/US3442823A/en not_active Expired - Lifetime
-
1966
- 1966-01-17 BE BE675189D patent/BE675189A/xx unknown
- 1966-02-07 AT AT107266A patent/AT258421B/de active
- 1966-02-16 CH CH226366A patent/CH453310A/de unknown
- 1966-02-21 NL NL6602216A patent/NL6602216A/xx unknown
- 1966-03-09 SE SE3119/66A patent/SE315267B/xx unknown
- 1966-03-18 GB GB12181/66A patent/GB1106314A/en not_active Expired
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2739088A (en) * | 1951-11-16 | 1956-03-20 | Bell Telephone Labor Inc | Process for controlling solute segregation by zone-melting |
| US3259582A (en) * | 1959-11-30 | 1966-07-05 | Siemens Ag | Mix-crystal semiconductor devices |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3651385A (en) * | 1968-09-18 | 1972-03-21 | Sony Corp | Semiconductor device including a polycrystalline diode |
| US3624467A (en) * | 1969-02-17 | 1971-11-30 | Texas Instruments Inc | Monolithic integrated-circuit structure and method of fabrication |
| US3711718A (en) * | 1969-12-09 | 1973-01-16 | Siemens Ag | Apparatus for detecting infrared radiation |
| US3925803A (en) * | 1972-07-13 | 1975-12-09 | Sony Corp | Oriented polycrystal jfet |
| US3953876A (en) * | 1973-06-07 | 1976-04-27 | Dow Corning Corporation | Silicon solar cell array |
| US4722764A (en) * | 1983-09-20 | 1988-02-02 | Wacker-Chemitronic Gesellschaft Fur Elektronic-Grundstoffe Mbh | Method for the manufacture of dislocation-free monocrystalline silicon rods |
| US4532000A (en) * | 1983-09-28 | 1985-07-30 | Hughes Aircraft Company | Fabrication of single crystal fibers from congruently melting polycrystalline fibers |
| US4984037A (en) * | 1986-12-11 | 1991-01-08 | Gte Laboratories Incorporated | Semiconductor device with conductive rectifying rods |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1519869B1 (de) | 1970-01-15 |
| SE315267B (US06815460-20041109-C00097.png) | 1969-09-29 |
| DE1519868B2 (de) | 1971-07-29 |
| GB1106314A (en) | 1968-03-13 |
| AT258421B (de) | 1967-11-27 |
| CH453310A (de) | 1968-06-14 |
| NL6602216A (US06815460-20041109-C00097.png) | 1966-09-19 |
| BE675189A (US06815460-20041109-C00097.png) | 1966-05-16 |
| DE1519868A1 (de) | 1970-04-16 |
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