US3397042A - Production of dislocation-free silicon single crystals - Google Patents

Production of dislocation-free silicon single crystals Download PDF

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Publication number
US3397042A
US3397042A US493955A US49395565A US3397042A US 3397042 A US3397042 A US 3397042A US 493955 A US493955 A US 493955A US 49395565 A US49395565 A US 49395565A US 3397042 A US3397042 A US 3397042A
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United States
Prior art keywords
rod
zone
seed
coil
crystal
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Expired - Lifetime
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US493955A
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English (en)
Inventor
Patrick H Hunt
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Texas Instruments Inc
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Texas Instruments Inc
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Filing date
Publication date
Priority claimed from US316347A external-priority patent/US3275417A/en
Priority to NL6411697A priority Critical patent/NL6411697A/xx
Priority to GB41589/64A priority patent/GB1075706A/en
Priority to DE1519912A priority patent/DE1519912C2/de
Priority to FR991376A priority patent/FR1415880A/fr
Priority to JP39058378A priority patent/JPS4817986B1/ja
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Priority to US493955A priority patent/US3397042A/en
Publication of US3397042A publication Critical patent/US3397042A/en
Application granted granted Critical
Priority to MY1969259A priority patent/MY6900259A/xx
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1084—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature

Definitions

  • a semiconductor rod is supported at the bottom thereof in a controlled atmosphere within a nonconductive tube.
  • Means including a single turn, inductive heating member encircles the rod outside the tube and is mounted for relative movement with respect to the rod for production of a molten zone in the rod when energized by a frequency alternating current.
  • a cooled, single turn, shorted focusing coil encircles the axis of the rod immediately below the heating member to control the molten zone from limiting the character of the height thereof.
  • a single crystal seed is dipped into the molten zone and the seed is rotated while withdrawing the same from the molten zone at a withdrawal rate initially substantially in excess of the upward movement of the rod and then at a rate substantially corresponding with the rate of movement of the rod.
  • This invention relates to a float zone process for forming silicon single crystals and more particularly to the control of a float zone crystal growth in which control is maintained over a molten Zone and a freezing solidliquid interface to minimize crystal dislocations.
  • a molten zone is caused to move along the length of an elongated silicon rod which is held in a vertical position.
  • This method has the advantage of producing low oxygen content crystals, but has been found to be disadvantageous in that any crystal of reasonable diameter, such as above about one centimeter, contains a large number of dislocations. The dislocations lower the minority carrier lifetime and further act as preferential diffusion paths for impurities during further processing and for the foregoing reasons are highly undesirable.
  • Dash Patent No. 2,961,305 contact between a molten zone and a single silicon crystal is established at the top pedestal of silicon which is longitudinally slotted. This slotting process and the fact that only small diameter crystals can be grown from the pedestal makes the system somewhat limited as a production operation although structurally perfect crystals may be obtained.
  • the focusing coil is in the form of an upwardly pointing truncated cone having a central aperture through which the rod passes.
  • a method for crucible-free float zone forming of a dislocation-free crystal from a rod of semiconductor material The rod is supported from the bottom in substantially vertical orientation in an inductively coupled R.F. field to form a molten zone in the rod which is sharply limited on the lower boundary thereof.
  • a single crystal silicon seed is dipped into the molten zone and then, while under rotation, the seed is withdrawn from the zone at a rate initially substantially in excess of the movement of the rod upward through the field and then at a rate substantially corresponding with the rate of movement of the rod through the field.
  • FIGURE 1 is a diagrammatic View of an apparatus embodying the present invention
  • FIGURE 2 is a perspective view of the coil 13 and its support.
  • FIGURE 3 is an enlarged view of a seed and molten zone shortly after initiation of crystal growth.
  • FIGURE 1 illustrates a system for float zone crystal growth in accordance with the present invention.
  • a rotating single crystal seed 10 of silicon initially is dipped into a molten pool formed on the top of a rod 11 of silicon.
  • Radio frequency power coupled to the silicon rod by a single-turn, closely-coupled coil 13 is adjusted until the tip of the seed melts, forming a continuous molten zone between the rod 11 and the seed 10.
  • the seed 10 is then withdrawn from the melt, and the R.F. power and the withdrawal speed are adjusted so that a long neck 14 is formed below the seed 10.
  • the neck 14 is of diameter smaller than that of the seed.
  • the R.F. power and the seed withdrawal rate are then changed gradually to preset values, during which time a transition zone 15 is formed. Predetermined values of withdrawal and feed are reached which determine the diameter of the newlyformed crystal 17 above the melt zone 16.
  • control is maintained over the heating zone and partially over the geometry of the RF field sharply to limit the lower boundary of the field. This permits control over the molten zone thereby to assure a minimum occurrence of dislocations.
  • FIGURE 1 The system for carrying out crystal growth in accordance with the preferred embodiment of the invention is shown in FIGURE 1.
  • the lower end of rod 11 is supported in a chuck, which chuck is supported by a bottom mounting ring 20.
  • Ring 20 is supported at the lower end of a rectangular frame 21 having two upper crossbars 22 and 23.
  • the frame 21 is supported at opposite sides thereof on lead screws such as the screw and by followers 26 and 27.
  • the lead screw 25 is supported at its lower end by a member 30 of a fixed frame or support.
  • a second lead screw (not shown) is similarly supported at its lower end.
  • a motor 31 is illustrated as con nected to lead screw 25 by way of bevel gears 32.
  • a similar driving arrangement is provided for the other lead screw.
  • the motor 31 will drive both lead screws so that the frame 21 may be precisely controlled in its movement upward relative to coil 13.
  • the seed 10, of rectangular cross section, is mounted in a chuck 35 and is solely supported in chuck 35 as to be movable relative to the frame 21.
  • the chuck 35 is supported at the lower end of a shaft 36.
  • the shaft 36 is journaled in an upper housing member 37 and is provided with a drive pulley 38.
  • the shaft 36 may be rotated by way of belt 39 driven from a motor 40.
  • the motor 40 is mounted on a cross plate 41 which extends between a pair of followers 42 and 43.
  • followers 42 and 43 are mounted on lead screws 44 and 45, respectively.
  • the lower ends of the lead screws 44 and 45 are journaled in the cross bars 22 and 23.
  • a pulley 46 is mounted .on the lead screw member 44 between crossbars 22 and 23 and is coupled by way of a belt 47 to a first pulley on the shaft of a motor 48.
  • a second pulley 49 mounted on the lower end of the lead screw 45 is coupled by way of a belt 50 to a second pulley on the shaft of the motor 48.
  • Pulleys 46 and 49 are keyed to the lower ends of the lead screws 44 and 45, respectively, for transmission of driving forces thereto. As the motor 40 is energized, the shaft 36 carrying the chuck 35 is caused to rotate in order to rotate the seed 10.
  • the lead screws 44 and 45 are rotated, causing the followers 42 and 43 to be raised or lowered, depending upon the direction of rotation of the motor 48.
  • the seed 10 may be raised or lowered relative to the upper end .of the rod 11.
  • the housing 37 in which the shaft 36 is journaled is coupled by way of a flexible bellows 51 to the upper end of a mounting ring 52.
  • the shaft 36 may be slidably supported in a bearing in the mounting ring 52.
  • An auxiliary hand-powered drive arrangement is provided for raising and lowering the seed 10.
  • a crank wheel 53 is coupled by bevel gears 54 to the shaft .of motor 48 so that an adjustment can be made as to the elevation of the seed 10 without energizing motor 48.
  • a quartz tube is clamped in the rings 20 and 52 and is coaxial with the rod 11.
  • all of the structure carried by frame 21 is movable relative to coil 13 so that a molten zone initiated in rod 11 may be caused to travel along the length of the rod 11 by raising the frame 21.
  • the travel of the frame 21 is carefully controlled as to be of constant speed so that mechanically induced aberrations may be avoided.
  • the character of the freezing interface between the melt zone 16 and the newly-formed crystal 17 and the starting rod 11 is maintained horizontal and flat by control of the molten zone.
  • This is accomplished, in accordance with the present invention, by control of the heating pattern from the coil 13 and by the movement of the newly-formed crystal 17 relative to the rod 11.
  • the coil 13 is a hollow, single-turn copper loop such as shown in FIGURE 2. It is mounted on a pair of brackets and 71 which are insulated one from the other. Coil 13 is flow-connected at the ends of the single turn to a source of cooling water, the flow of which is maintained through the coil. Coil 13 is also connected to a source of RF.
  • focusing coil 72 is mounted immediately below the coil 13 and is in the form of a hollow, truncated cone having a center bore through which the tube 60 extends.
  • the focusing coil 72 is made of a highly conductive material such as copper, and is provided with a pair of flow channels 73 and 74 leading thereto. Flow channels 73 and 74 provide for flow of cooling water through the focusing coil 72.
  • the coil is placed immediately adjacent to and immediately below the coil 13 and serves to rob power from the field produced by excitation of the coil 13. This serves to control the length of the molten zone and limits its shape.
  • the control .over the configuration of the freezing zone above the coil 13 has been found to be controllable by this means so that the crystal 17 may be grown above rod 11 of diameter equal the diameter .of rod 11 without the molten zone 16 falling out and with substantial freedom of dislocations.
  • Argon is introduced into the lower end of the tube 60 by way of a channel 75.
  • Argon flows from the upper end of the system by way of channel 76.
  • the growing cycle is initiated by playing a flame from a hydrogen torch 77 onto the wall of the tube 60 in a region preferably somewhat below the upper end of the rod 11.
  • the coil 13 is energized from a radio-frequency generator so that coil 13 becomes electromagnetically coupled to the rod 11.
  • the coupling is such that the rod may be made molten by increasing the energy level of the field from coil 13.
  • the flame from torch 77 is then turned off.
  • the rod 11 is then lowered so that the R.F. coupling zone is at the top .of rod 11.
  • the RP. power is then increased.
  • the seed 10 As the rod 11 becomes molten, the seed 10 is lowered so that the lower end thereof is immersed in the molten pool on the upper end of the rod 11. Surface tension of the molten zone 16 and the electromagnetic field from the coil 13 maintains the integrity of the molten zone preventing its falling out.
  • the seed 10 is then rotated at a relatively slow speed and is slowly withdrawn from the upper surface of the molten pool on rod 11.
  • the motors 31 and 48 are adjusted as to speed so that the crystal initially grown onto the seed 10 is necked down to a smaller diameter than the seed 10 and is permitted to maintain the relatively small diameter until it attains a length of several centimeters. At this time, the rate of movement of the seed 10 relative to the rod 11 is reduced gradually so that the transition zone 15 is formed.
  • the movement of the seed 10 relative to the rod 11 may be discontinued so that the newly-formed section 17 will have the same diameter as the original rod 11.
  • the motor 31 then continues to drive the frame 21 upward, carrying with it the rod 11 as encased Within the quartz tube 60.
  • the molten zone 16 moves downward through the entire length of the rod 11 with the newly-formed crystal 17 freezing progressively above the molten zone as the body moves away from the zone controlled by the coil 13.
  • a single pass beginning at the top .of the rod 11 and terminating at the bottom of the crystal has been found to produce a crystal 17 which is free from dislocations and has a relatively low oxygen content and high minority carrier lifetime.
  • the traverse of the molten zone 16 down the length of the rod 11 may be of the order of about one hundred and fifty millimeters per hour with no differential pull rate and with the rotation of the seed 10 and the newly-formed crystal 17 in the range of from about two (2) to twenty (20) rpm.
  • the rotational speed preferably is in the lower end of the latter range.
  • Crystals may be grown having diameters .of two (2) to three (3) centimeters or more while maintaining the freedom from dislocations.
  • the flow rate of gas by way of channel 75, 60, and 76, at a rate of about one-half liter per minute, has been found to be satisfactory. Higher flow rates are employed when the diameter .of the newly-formed crystal section 17 reaches a diameter of about 3.3 millimeters. In the latter range, flow rates of one to 1.5 liters per minute will be employed.
  • the rod 11 may have a diameter of about twenty-eight (28) millimeters.
  • the quartz tube 60 would have an inner diameter of thirty-two (32) millimeters and an outer diameter of thirty-four (34) millimeters.
  • the coil 13 is about five (5) millimeters tube size and of diameter such that the quartz tube 60 is free of the coil 13 but with minimum spacing therebetween.
  • the focusing coil 72 is of the same inner diameter as the inner diameter of the coil 13.
  • the upper surface of the coil 72 was spaced about ten millimeters below the lower surface of the coil 13.
  • Coil 72 was of the order of one hundred and twenty-seven (127) millimeters in diameter at the bottom and slightly larger than the coil 13 at the top thereof.
  • the rod 11 was about twentyeight (28) millimeters in diameter.
  • the travel of the rod through the coil 13 was maintained at about one hundred and fifty (150) millimeters per hour.
  • the speed has been lowered somewhat to about one hundred and fifteen (115) millimeters per hour in order to assure a zone which is completely molten, and to avoid freezing up during the pulling operation.
  • the traverse rate will thus depend upon the size of the rod employed and upon the power in the RF. field. It should therefore be understood that the foregoing is given by way of example and not by way of limitation.
  • FIGURE 3 A guide by which the operation may be evaluated is illustrated in FIGURE 3.
  • the seed 10 is withdrawn from the molten top of rod 11 to form the neck 14 of reduced diameter to assure crystal structure of a large diameter which is dislocation-free.
  • Crystal growth prefer ably is initiated when the lower end of seed 10 is of the shape illustrated in FIGURE 3. More particularly, as the seed 10 rotates and becomes wetted in the melt, the corners of the seed tend to form cusps with downwardly pointed corners. When the seed 10 is shaped generally in the form indicated in FIGURE 3, the pulling operation may then be commenced.
  • the system includes electrical controls for the speeds of motors 31, 40, and 48 as well as for control of the level of power from a suitable R.F. generator for the coil 13 of FIGURES 1 and 2.
  • Such controls are well-known in the art.
  • the system operate to transfer semiconductor material from the bottom supported rod 11 into the form of a dislocation-free crystal.
  • the operation is carried out in the argon atmosphere in the tube 60.
  • the transfer by way of a molten zone of controlled configuration, is onto a single crystal seed rotatably supported above the molten zone.
  • the singleturn annular heating coil 13 encircles the rod 11 outside the tube 60' and is energized by high frequency alternating current to create the molten zone in the rod 11.
  • the single-turn, shorted focusing coil 72 encircles rod 11 immediately below the heating coil 13 to rob power from the RP. field at the lower boundary to limit the height of the molten zone and thus control the molten zone.
  • germanium can be grown from melts contained in quartz crucibles. Nevertheless, the present invention may be employed for production of germanium bodies which are dislocation-free, if desired. Since the density of germanium is somewhat greater than that of silicon, the diameter of the float zone would have to be maintained somewhat smaller in order to maintain its integrity. In providing an inert atmosphere in which the molten zone is maintained, argon has been used and has been specified in the foregoing description. However, any inert gas which will not react with silicon at the temperatures involved would be suitable. Helium, neon, and the like, as well as hydrogen,
  • a method of growing a dislocation-free single crystal solid rod by crucible-free float zone melting in an inert atmosphere of a rod of semiconductor material which comprises:

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
US493955A 1963-10-15 1965-08-27 Production of dislocation-free silicon single crystals Expired - Lifetime US3397042A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
NL6411697A NL6411697A (nl) 1963-10-15 1964-10-08
GB41589/64A GB1075706A (en) 1963-10-15 1964-10-12 Production of dislocation-free single crystals of semiconductor material
DE1519912A DE1519912C2 (de) 1963-10-15 1964-10-13 Verfahren zum Herstellen von versetzungsfreiem, einkristallinem Halbleitermaterial
FR991376A FR1415880A (fr) 1963-10-15 1964-10-14 Procédé de fabrication de cristaux uniques de silicium sans fêlure
JP39058378A JPS4817986B1 (nl) 1963-10-15 1964-10-15
US493955A US3397042A (en) 1963-10-15 1965-08-27 Production of dislocation-free silicon single crystals
MY1969259A MY6900259A (en) 1963-10-15 1969-12-31 Production of dislocation - free single crystals of semiconductor material

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US316347A US3275417A (en) 1963-10-15 1963-10-15 Production of dislocation-free silicon single crystals
US493955A US3397042A (en) 1963-10-15 1965-08-27 Production of dislocation-free silicon single crystals

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US3397042A true US3397042A (en) 1968-08-13

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US493955A Expired - Lifetime US3397042A (en) 1963-10-15 1965-08-27 Production of dislocation-free silicon single crystals

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US (1) US3397042A (nl)
JP (1) JPS4817986B1 (nl)
DE (1) DE1519912C2 (nl)
GB (1) GB1075706A (nl)
MY (1) MY6900259A (nl)
NL (1) NL6411697A (nl)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3655345A (en) * 1967-03-09 1972-04-11 Siemens Ag Method of growing rod-shaped dislocation-free monocrystals, particularly of silicon, by crucible-free floating zone melting
US4045181A (en) * 1976-12-27 1977-08-30 Monsanto Company Apparatus for zone refining
US4197157A (en) * 1975-03-19 1980-04-08 Arthur D. Little, Inc. Method for forming refractory tubing
US20160177469A1 (en) * 2014-12-18 2016-06-23 Siltronic Ag Method For Growing A Single Crystal By Crystallizing The Single Crystal From A Float Zone

Families Citing this family (4)

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Publication number Priority date Publication date Assignee Title
JPS52107183A (en) * 1976-03-06 1977-09-08 Toshitaka Okamoto Electric stand shade
JPS5374781A (en) * 1976-12-16 1978-07-03 Imagawa Yasuhito Foldable lamp shade
JPS546383A (en) * 1977-06-16 1979-01-18 Yasuhito Imagawa Foldable lamp shade
DE3421538A1 (de) * 1984-06-08 1985-12-12 ATOMIKA Technische Physik GmbH, 8000 München Vakuumaufdampfeinrichtung

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US2962363A (en) * 1957-07-09 1960-11-29 Pacific Semiconductors Inc Crystal pulling apparatus and method
US2981687A (en) * 1958-04-03 1961-04-25 British Thomson Houston Co Ltd Production of mono-crystal semiconductor bodies
US3036892A (en) * 1958-03-05 1962-05-29 Siemens Ag Production of hyper-pure monocrystal-line rods in continuous operation
GB930432A (en) * 1960-09-20 1963-07-03 Siemens Ag Improvements in or relating to methods of making bodies of semi-conductor material
US3108169A (en) * 1959-08-14 1963-10-22 Siemens Ag Device for floating zone-melting of semiconductor rods
CA674121A (en) * 1963-11-12 Siemens-Schuckertwerke Aktiengesellschaft Method and apparatus for producing a strip of hyperpure semiconductor material
US3135585A (en) * 1960-03-01 1964-06-02 Gen Electric Method of growing dislocation-free semiconductor crystals
US3157472A (en) * 1959-09-11 1964-11-17 Siemens Ag Drawing semiconductor crystals

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DE1153908B (de) * 1958-04-22 1963-09-05 Siemens Ag Verfahren und Vorrichtung zum tiegellosen Zonenschmelzen mit Abstandsaenderung der Stabenden
US2905798A (en) * 1958-09-15 1959-09-22 Lindberg Eng Co Induction heating apparatus
FR1282910A (fr) * 1960-03-01 1962-01-27 Thomson Houston Comp Francaise Méthode de croissance sans dislocation de cristaux de semi-conducteur
GB926487A (en) * 1960-11-25 1963-05-22 Dorman & Smith Ltd Improvements in and relating to electrical fuse assemblies
NL129916C (nl) * 1961-02-07

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA674121A (en) * 1963-11-12 Siemens-Schuckertwerke Aktiengesellschaft Method and apparatus for producing a strip of hyperpure semiconductor material
US2962363A (en) * 1957-07-09 1960-11-29 Pacific Semiconductors Inc Crystal pulling apparatus and method
US3036892A (en) * 1958-03-05 1962-05-29 Siemens Ag Production of hyper-pure monocrystal-line rods in continuous operation
US2981687A (en) * 1958-04-03 1961-04-25 British Thomson Houston Co Ltd Production of mono-crystal semiconductor bodies
US3108169A (en) * 1959-08-14 1963-10-22 Siemens Ag Device for floating zone-melting of semiconductor rods
US3157472A (en) * 1959-09-11 1964-11-17 Siemens Ag Drawing semiconductor crystals
US3135585A (en) * 1960-03-01 1964-06-02 Gen Electric Method of growing dislocation-free semiconductor crystals
GB930432A (en) * 1960-09-20 1963-07-03 Siemens Ag Improvements in or relating to methods of making bodies of semi-conductor material

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3655345A (en) * 1967-03-09 1972-04-11 Siemens Ag Method of growing rod-shaped dislocation-free monocrystals, particularly of silicon, by crucible-free floating zone melting
US4197157A (en) * 1975-03-19 1980-04-08 Arthur D. Little, Inc. Method for forming refractory tubing
US4045181A (en) * 1976-12-27 1977-08-30 Monsanto Company Apparatus for zone refining
US20160177469A1 (en) * 2014-12-18 2016-06-23 Siltronic Ag Method For Growing A Single Crystal By Crystallizing The Single Crystal From A Float Zone
US9932691B2 (en) * 2014-12-18 2018-04-03 Siltronic Ag Method for growing a single crystal by crystallizing the single crystal from a float zone

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Publication number Publication date
MY6900259A (en) 1969-12-31
GB1075706A (en) 1967-07-12
NL6411697A (nl) 1965-04-20
DE1519912B1 (de) 1970-06-18
DE1519912C2 (de) 1974-10-03
JPS4817986B1 (nl) 1973-06-02

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