FR1415880A - Procédé de fabrication de cristaux uniques de silicium sans fêlure - Google Patents

Procédé de fabrication de cristaux uniques de silicium sans fêlure

Info

Publication number
FR1415880A
FR1415880A FR991376A FR991376A FR1415880A FR 1415880 A FR1415880 A FR 1415880A FR 991376 A FR991376 A FR 991376A FR 991376 A FR991376 A FR 991376A FR 1415880 A FR1415880 A FR 1415880A
Authority
FR
France
Prior art keywords
manufacturing process
free silicon
silicon crystals
crack
unique
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR991376A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US316347A external-priority patent/US3275417A/en
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Priority to FR991376A priority Critical patent/FR1415880A/fr
Priority claimed from US493955A external-priority patent/US3397042A/en
Application granted granted Critical
Publication of FR1415880A publication Critical patent/FR1415880A/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
FR991376A 1963-10-15 1964-10-14 Procédé de fabrication de cristaux uniques de silicium sans fêlure Expired FR1415880A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR991376A FR1415880A (fr) 1963-10-15 1964-10-14 Procédé de fabrication de cristaux uniques de silicium sans fêlure

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US316347A US3275417A (en) 1963-10-15 1963-10-15 Production of dislocation-free silicon single crystals
FR991376A FR1415880A (fr) 1963-10-15 1964-10-14 Procédé de fabrication de cristaux uniques de silicium sans fêlure
US493955A US3397042A (en) 1963-10-15 1965-08-27 Production of dislocation-free silicon single crystals

Publications (1)

Publication Number Publication Date
FR1415880A true FR1415880A (fr) 1965-10-29

Family

ID=27248385

Family Applications (1)

Application Number Title Priority Date Filing Date
FR991376A Expired FR1415880A (fr) 1963-10-15 1964-10-14 Procédé de fabrication de cristaux uniques de silicium sans fêlure

Country Status (1)

Country Link
FR (1) FR1415880A (fr)

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