US3346414A - Vapor-liquid-solid crystal growth technique - Google Patents

Vapor-liquid-solid crystal growth technique Download PDF

Info

Publication number
US3346414A
US3346414A US340701A US34070164A US3346414A US 3346414 A US3346414 A US 3346414A US 340701 A US340701 A US 340701A US 34070164 A US34070164 A US 34070164A US 3346414 A US3346414 A US 3346414A
Authority
US
United States
Prior art keywords
agent
substrate
site
growth
vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US340701A
Other languages
English (en)
Inventor
William C Ellis
William G Pfann
Richard S Wagner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Bell Telephone Laboratories Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bell Telephone Laboratories Inc filed Critical Bell Telephone Laboratories Inc
Priority to US340701A priority Critical patent/US3346414A/en
Priority to NL6500600A priority patent/NL6500600A/xx
Priority to FR3364A priority patent/FR1422685A/fr
Priority to DEW38414A priority patent/DE1290921B/de
Priority to GB3521/65A priority patent/GB1070991A/en
Priority to BE658975D priority patent/BE658975A/xx
Application granted granted Critical
Publication of US3346414A publication Critical patent/US3346414A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/17—Vapor-liquid-solid

Definitions

  • VAPOR-LIQUID-SOLID CRYSTAL GROWTH TECHNIQUE Filed Jan. 28, 1964 2 Sheets-Sheet-l I I I In 15% ⁇ , y glll qkt ili' W. C. ELL/S lA/l/ENTORS W. G. PFANN R. S. WAGNER A T TORNE V Oct. 10, 1967 w. c. ELLIS ET AL VAPOR-LIQUID-SOLID CRYSTAL GROWTH TECHNIQUE 2 Sheets-Sheet 2 Filed Jan. 28, 1964 United States Patent 3,346,414 VAPOR-LIQUlD-SOLID CRYSTAL GROWTH TECHNIQUE Wiliiam C. Ellis, Maplewood, William G. Pfann, Far
  • This invention relates to a technique for the growth of crystalline materials.
  • a crystallization mechanism wherein crystallization is initiated upon the formation of a liquid layer which is saturated with respect to at least one of the constituents of the desired crystalline material.
  • the present inventive technique is directed to the controlled growth of a crystalline body comprising a first material wherein a second material comprising an agent is contacted with a vapor comprising the said first material, the said agent being such that it is capable of forming a liquid solution comprising the said agent and the said first material, in which solution the said agent is maintained at a temperature above the initial freezing temperature of the solution and from which the said first material freezes out of solution at the site of the agent. Vapor-agent contact is continued for a time sufiicient to supersaturate the liquid solution with respect to the first material.
  • crystal growth is initiated at the site of the agent, a requirement being that the agent be placed at the desired site of crystal growth in a separate manipulative step.
  • substrates may or may not be present, and when present may serve as a physical support, completely'unreactive with respect to the agent, or may be chosen to react with or dissolve the agent.
  • the choice of a substrate is dependent upon practical considerations, for example, heat resistance, avoidance of contamination, et cetera.
  • Preferred embodiments of the present invention utilize a substrate which is single crystalline, at least over the area of the desired site of crystal growth, and oriented. Still further embodiments are directed to the growth of crystalline bodies which follow the orientation of a substrate material.
  • the inventive techniqe is of particular interest for use in the growth of semiconductor materials, superconducting compositions, high melting refractory and ceramic crystals, luminescent materials, including optical maser compositions, p-n, n-n and n-p-n configurations, magnetic oxides, et cetera.
  • FIG. 1 is a schematic front elevational view of an apparatus utilized in the practice of the present invention for the growth of crystalline bodies
  • FIG. 2 is a schematic front elevational view of another apparatus suitable for the growth of crystalline bodies in accordance with the invention.
  • agent denotes a broad class of operative materials which may be employed in the practice of the present invention. Agents may be selected from among elements, compounds, solutions or multiphase mixtures, such as eutectic compositions. Further, the agent may'be alloyed with or admixed with one or more constituents of the desired crystalline material or, if present, with one or more constituents of a substrate material. The agent may also be or contain a minor constituent desired in the material being crystallized, for example, an acceptor or donor in a semiconductor material or an activating element in a maser crystal.
  • Agents employed in the practice of the invention desirably evidence a vapor pressure over the liquid solution of the order of a few millimeters of mercury in order to avoid excess loss thereof. It will be evident from the requirements outlined that the constituent or constituents of the agent must evidence a distribution coefiicient k less than unity, k being defined as the ratio of the concentration of the constituent or constituents of the agent in the desired crystalline material to its concentration in the liquid solution from which the desired crystalline material is grown. Selection of a particular agent having desired minimum or maximum values of k is dependent upon the specific crystalline material being grown and the vapor transport reaction selected.
  • k may be of the order of 0.1 or lower whereas in the growth of crystalline bodies of large area and small thickness, k may be of the order of 0.5 and greater.
  • Still another property influencing the selection of an agent is the wetting characteristic of the liquid solution containing the agent, with respect to the substrate and the desired crystalline material.
  • the contact angle between the liquid solution and the substrate or crystalline body he as high as or greater, whereas in the growth of crystalline bodies of large area and small thickness from thin layers of liquid solution it is generally preferred that the contact angle be small, ranging down'to 0.
  • deposition of a vaporous material is initiated at the site of the agent, a requirement being that the agent be placed at the desired site of crystalline growth in an independent manipulative step.
  • Several techniques are available for providing the agent at the desired site of growth. For example, it may be convenient to place the agent in the growth region by manual means or to deposit films of the agent of prescribed thicknesses by evaporation, electroplating, et cetera. Further, masks may be employed as desired to form specific arrays and patterns. It will be understood that the quantity of agent employed is self-regulating and of no criticality.
  • the desired crystalline material may be furnished by any of the well known vapor transport processes, typical reactions being set forth below.
  • the apparatus shown includes a source of a reactive gas, a saturating system and a reaction chamber.
  • a reactive gas is admitted into the system from source 11, controlled by valve 12, and passes via conduit 13 through a purification trap 14. Thereafter, the gas passes from trap 14 via conduit 16 and proceeds to a second trap 17 containing a purification medium.
  • the now purified gas emerges from trap 17 via conduit 19, controlled by valve 19A, and may pass directly into the reaction chamber or first through a saturator 20 by means of conduit 21 controlled by valve 22, saturator 20 containing a suitable liquid 23. Control of the ratio of liquid 23 to reactive gas is maintained by refrigerating saturator 20 with a suitable cold bath 24.
  • Reactive gas passing through saturator 20 emerges together with liquid 23 via conduit 25, controlled by valve 26 and proceeds to reaction chamber 27.
  • Chamber 27 may be a fused silica tube, typically having disposed therein a cylinder 28 containing a pedestal 29 upon which a substrate 30 may be positioned.
  • Chamber 27 suitably heated by means of RF heater 31, the temperature of substrate 30 being measured by thermocouple 32.
  • the gaseous products of the reaction emerge from chamber 27 via conduit 33 and pass through trap 34 and on to an exhaust system 35 by means of conduit 36.
  • the present invention is conveniently described in detail by reference to an illustrative example in which silicon crystals are grown upon an oriented silicon substrate by the hydrogen reduction of silicon tetrachloride in accordance with the present invention, gold being em ployed as the agent, ultizing an apparatus of the type shown in FIG. 1.
  • An oriented single crystal of silicon is chosen as the substrate material and initially ground flat with a suitable abrasive.
  • Hydrogen is chosen as the reactive gas and silicon tetrachloride in liquid form is inserted in saturator 20.
  • valves 22 and 26 are turned to the open position, valve 19A closed and the reduction of silicon tetrachloride initiated.
  • the conditions employed in such techniques are well known to those skilled in the art. (See, for example, Journal of the Electrochemical Society, volume 108, pages 649-653, 1961.)
  • silicon preferentially deposits at the site of the liquid droplet which eventually attains a state of supersaturation with respect to silicon, thereby causing silicon to freeze out of solution together with a small concentration of gold at the interface between the solid silicon and the liquid alloy.
  • the alloy droplet becomes displaced from the substrate crystal and rides atop the growing crystal.
  • Example I This example describes the growth of silicon crystals by the hydrogen reduction of silicon tetrachloride in an apparatus similar to that shown in FIG. 1.
  • the substrate was then ground fiat with an abrasive paper and given a bright etch to expose undamaged crystal surfaces.
  • the etching procedure involved treating for 3 minutes with a 1:1 solution of hydrofluoric and nitric acids followed by a 4 minute treatment with a 1:2:6 solution of hydrofluoric, acetic and nitric acids.
  • the etched substrate was masked with deionized water and dried in an oven at C.
  • gold particles approximately 50 microns in diameter were placed by manual means upon the etched substrate at the desired sites of crystalline growth. Then the substrate was positioned upon pedestal 29 in the apparatus.
  • valves 22 and 26 were opened, and valve 19A closed, thereby permitting hydrogen to pass through saturator 20 where silicon tetrachloride, obtained from commercial sources, was picked up and carried to chamber 27. Silicon was permitted to deposit at the sites of the alloy droplets for a period of 2 /2 hours. The flow of hydrogen through the system was maintained within the range of 300 to 360 cc. per minute and the molar ratio of SiCL, to H was maintained at approximately 1: 10 by means of cold bath 24.
  • the resultant silicon crystals were acicular in nature, approximately 5 mm. in length and were found at each alloy site growing perpendicular to the substrate. The crystals were generally hexagonal in cross-section and of high crystalline perfection.
  • Example 11 The procedure of Example I was repeated with the exception that nickel, palladium, silver, copper and platinum particles were placed upon the (111) faces of silicon single crystal substrates.
  • the reaction chamber was heated to 1050 C. and the process begun with a H flow of 250 cc. per minute and a SiCl /H ratio of 1:10, the reaction being permitted to continue to one hour.
  • the resultant crystals of silicon in each case grew at the sites of the alloy formed between the agent, for example, Pd, Pt, et cetera, and the substrate were acicular in nature, approximately 5 mm. in length and grew perpendicular to the substrate.
  • the crystals were hexagonal in cross-section.
  • Example 111 -Example IV The procedure of Example I was repeated with the exception that gold particles having a diameter of approximately 3 mm. were employed as the agent. The resultant crystalline layers evidenced the same orientation as that of the substrate. It was noted that growth at 950 C. contrasts sharply with temperatures of 1200 C. commonly required for the growth of epitaxial layers of silicon.
  • FIG. 2 there is shown a schematic front elevational view of another apparatus suitable for the growth of crystalline bodies in accordance with the present invention.
  • the apparatus shown includes a source of a gas, a saturating system and a reaction chamber.
  • the gas is admitted into the system from source 41 controlled by valve 42 and passes via conduit 43 through purification trap 44. Thereafter, the gas emerges from trap 44 via conduit 45 and either passes directly into the reaction chamber, controlled by valve 46 or through saturator 47 by means of conduit 48 controlled by valve 49.
  • Gas passing through saturator 47 emerges together with vapors of a liquid 50 contained in saturator 47, which is refrigerated by cold bath 51, via conduit 52, controlled by valve 53, and proceeds to reaction chamber 54.
  • Chamber 54 is heated by means of an electrical resistance furnace 55.
  • the gaseous products of reaction emerge from chamber 54 via conduit 56 and pass through flowmeter 57 and exhaust 58 by means of conduit 59.
  • Example V This example describes the growth of gallium arsenide crystals in an apparatus similar to that shown in FIG. 2. Hydrogen was employed as the gas; saturator 47 contained distilled water refrigerated by a mixture of water and ice and chamber 54 was a fused silica tube /3" ID. x
  • a gallium arsenide water 2 mm. x 3 mm. x /2 mm.
  • valves 49 and 53 were turned to the open position, and valve 46 to the closed position, thereby permitting hydrogen to pass through the saturating system, so carrying water to the reaction chamber wherein the source was maintained at 970 C. and the substrate at 790 C., the following reaction occurring:
  • the flow of hydrogen saturated with water was maintained at a rate of approximately 35 ml./min.
  • the reaction continued for 2 /2 hours.
  • the resultant crystals of gallium arsenide were of acicular form, approximately 5 mm. in length and were found at the site of the gallium agent.
  • Example V The procedure of Example V was repeated with the exception that gold filings were employed as an alloying agent rather than gallium.
  • the source was maintained at 1010 C. and the substrate at 830 C.
  • the resultant acicular crystals of gallium arsenide were in blade and needle form, approximately 5 mm. in length and grew at each site of the filings.
  • Example VII The procedure of Example V was. repeated with the exception that palladium chloride was placed upon the surface of the gallium arsenide and decomposed in hydrogen at 860 C. to yield palladium as the alloying agent.
  • the source was maintained at 970 C. and the substrate at 860 C.
  • the resultant acicular crystals of gallium arsenide were in blade and needle form approximately 5 mm. in length and grew at each site of the palladium chloride.
  • Example VIII The procedure of Example VI was repeated with the exception that a polycrystalline gallium phosphide substrate and a gallium phosphide source was employed. The source was maintained at 995 C. and the substrate at 875 C. The resultant acicular crystals of gallium phosphide were in blade and needle form, approximately 3 mm. in length and grew at each site of the filings.
  • a process for the controlled growth of a crystalline body comprising a first material at a given site comprising providing a second material comprising an agent at the said site, contacting the said second material with a vapor comprising the said first material, the said agent being such that it is capable of forming a liquid solution comprising the said agent and the said first material, the said second material being maintained at a temperature above the initial freezing temperature of the said solution and continuing the said contacting for a time sufiicient to supersaturate the said solution with respect to the said first material thereby initiating crystallization at the said site.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
US340701A 1964-01-28 1964-01-28 Vapor-liquid-solid crystal growth technique Expired - Lifetime US3346414A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
US340701A US3346414A (en) 1964-01-28 1964-01-28 Vapor-liquid-solid crystal growth technique
NL6500600A NL6500600A (en)) 1964-01-28 1965-01-18
FR3364A FR1422685A (fr) 1964-01-28 1965-01-26 Procédé de croissance d'un cristal
DEW38414A DE1290921B (de) 1964-01-28 1965-01-27 Kristallzuechtungsverfahren
GB3521/65A GB1070991A (en) 1964-01-28 1965-01-27 Processes for the growth of crystalline bodies
BE658975D BE658975A (en)) 1964-01-28 1965-01-28

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US340701A US3346414A (en) 1964-01-28 1964-01-28 Vapor-liquid-solid crystal growth technique

Publications (1)

Publication Number Publication Date
US3346414A true US3346414A (en) 1967-10-10

Family

ID=23334570

Family Applications (1)

Application Number Title Priority Date Filing Date
US340701A Expired - Lifetime US3346414A (en) 1964-01-28 1964-01-28 Vapor-liquid-solid crystal growth technique

Country Status (5)

Country Link
US (1) US3346414A (en))
BE (1) BE658975A (en))
DE (1) DE1290921B (en))
GB (1) GB1070991A (en))
NL (1) NL6500600A (en))

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3446659A (en) * 1966-09-16 1969-05-27 Texas Instruments Inc Apparatus and process for growing noncontaminated thermal oxide on silicon
US3462320A (en) * 1966-11-21 1969-08-19 Bell Telephone Labor Inc Solution growth of nitrogen doped gallium phosphide
US3476593A (en) * 1967-01-24 1969-11-04 Fairchild Camera Instr Co Method of forming gallium arsenide films by vacuum deposition techniques
US3493431A (en) * 1966-11-25 1970-02-03 Bell Telephone Labor Inc Vapor-liquid-solid crystal growth technique
US3505127A (en) * 1967-09-21 1970-04-07 Bell Telephone Labor Inc Vapor-liquid-solid crystal growth technique for the production of needle-like single crystals
US3536538A (en) * 1968-03-29 1970-10-27 Bell Telephone Labor Inc Crystal growth technique
US3617371A (en) * 1968-11-13 1971-11-02 Hewlett Packard Co Method and means for producing semiconductor material
US3632405A (en) * 1968-04-13 1972-01-04 Philips Corp Crystals, in particular crystal whiskers and objects comprising such crystals
US3772774A (en) * 1967-04-26 1973-11-20 Philips Corp Method of manufacturing multiple conductive lead-in members
US4013503A (en) * 1966-12-14 1977-03-22 North American Philips Corporation Filamentary silicon carbide crystals by VLS growth in molten iron
US4058418A (en) * 1974-04-01 1977-11-15 Solarex Corporation Fabrication of thin film solar cells utilizing epitaxial deposition onto a liquid surface to obtain lateral growth
US4132571A (en) * 1977-02-03 1979-01-02 International Business Machines Corporation Growth of polycrystalline semiconductor film with intermetallic nucleating layer
US4155781A (en) * 1976-09-03 1979-05-22 Siemens Aktiengesellschaft Method of manufacturing solar cells, utilizing single-crystal whisker growth
US4225367A (en) * 1977-11-04 1980-09-30 Rhone-Poulenc Industries Production of thin layers of polycrystalline silicon on a liquid layer containing a reducing agent
US4702901A (en) * 1986-03-12 1987-10-27 The United States Of America As Represented By The United States Department Of Energy Process for growing silicon carbide whiskers by undercooling
US4789537A (en) * 1985-12-30 1988-12-06 The United States Of America As Represented By The United States Department Of Energy Prealloyed catalyst for growing silicon carbide whiskers
US5322711A (en) * 1989-07-21 1994-06-21 Minnesota Mining And Manufacturing Company Continuous method of covering inorganic fibrous material with particulates
US5405654A (en) * 1989-07-21 1995-04-11 Minnesota Mining And Manufacturing Company Self-cleaning chemical vapor deposition apparatus and method
US5547512A (en) * 1989-07-21 1996-08-20 Minnesota Mining And Manufacturing Company Continuous atomspheric pressure CVD coating of fibers
US5733369A (en) * 1986-03-28 1998-03-31 Canon Kabushiki Kaisha Method for forming crystal
US5846320A (en) * 1986-03-31 1998-12-08 Canon Kabushiki Kaisha Method for forming crystal and crystal article obtained by said method
US20080072816A1 (en) * 2006-09-26 2008-03-27 Riess Walter H Crystalline structure and method of fabrication thereof
US7449065B1 (en) 2006-12-02 2008-11-11 Ohio Aerospace Institute Method for the growth of large low-defect single crystals
US20100072455A1 (en) * 2008-09-22 2010-03-25 Mark Albert Crowder Well-Structure Anti-Punch-through Microwire Device
US9719165B2 (en) 2014-03-19 2017-08-01 Blue Wave Semiconductors, Inc. Method of making ceramic glass

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2789068A (en) * 1955-02-25 1957-04-16 Hughes Aircraft Co Evaporation-fused junction semiconductor devices
US2802759A (en) * 1955-06-28 1957-08-13 Hughes Aircraft Co Method for producing evaporation fused junction semiconductor devices

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE509317A (en)) * 1951-03-07 1900-01-01
DE1042553B (de) * 1953-09-25 1958-11-06 Int Standard Electric Corp Verfahren zur Herstellung von Silicium grosser Reinheit
DE1048638B (de) * 1957-07-02 1959-01-15 Siemens &. Halske Aktiengesellschaft, Berlin und München Verfahren zur Herstellung von Halbleitereinkristallen, insbesondere von Silizium durch thermische Zersetzung oder Reduktion

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2789068A (en) * 1955-02-25 1957-04-16 Hughes Aircraft Co Evaporation-fused junction semiconductor devices
US2802759A (en) * 1955-06-28 1957-08-13 Hughes Aircraft Co Method for producing evaporation fused junction semiconductor devices

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3446659A (en) * 1966-09-16 1969-05-27 Texas Instruments Inc Apparatus and process for growing noncontaminated thermal oxide on silicon
US3462320A (en) * 1966-11-21 1969-08-19 Bell Telephone Labor Inc Solution growth of nitrogen doped gallium phosphide
US3493431A (en) * 1966-11-25 1970-02-03 Bell Telephone Labor Inc Vapor-liquid-solid crystal growth technique
US4013503A (en) * 1966-12-14 1977-03-22 North American Philips Corporation Filamentary silicon carbide crystals by VLS growth in molten iron
US3476593A (en) * 1967-01-24 1969-11-04 Fairchild Camera Instr Co Method of forming gallium arsenide films by vacuum deposition techniques
US3772774A (en) * 1967-04-26 1973-11-20 Philips Corp Method of manufacturing multiple conductive lead-in members
US3505127A (en) * 1967-09-21 1970-04-07 Bell Telephone Labor Inc Vapor-liquid-solid crystal growth technique for the production of needle-like single crystals
US3536538A (en) * 1968-03-29 1970-10-27 Bell Telephone Labor Inc Crystal growth technique
US3632405A (en) * 1968-04-13 1972-01-04 Philips Corp Crystals, in particular crystal whiskers and objects comprising such crystals
US3617371A (en) * 1968-11-13 1971-11-02 Hewlett Packard Co Method and means for producing semiconductor material
US4058418A (en) * 1974-04-01 1977-11-15 Solarex Corporation Fabrication of thin film solar cells utilizing epitaxial deposition onto a liquid surface to obtain lateral growth
US4155781A (en) * 1976-09-03 1979-05-22 Siemens Aktiengesellschaft Method of manufacturing solar cells, utilizing single-crystal whisker growth
US4132571A (en) * 1977-02-03 1979-01-02 International Business Machines Corporation Growth of polycrystalline semiconductor film with intermetallic nucleating layer
US4225367A (en) * 1977-11-04 1980-09-30 Rhone-Poulenc Industries Production of thin layers of polycrystalline silicon on a liquid layer containing a reducing agent
US4789537A (en) * 1985-12-30 1988-12-06 The United States Of America As Represented By The United States Department Of Energy Prealloyed catalyst for growing silicon carbide whiskers
US4702901A (en) * 1986-03-12 1987-10-27 The United States Of America As Represented By The United States Department Of Energy Process for growing silicon carbide whiskers by undercooling
US5733369A (en) * 1986-03-28 1998-03-31 Canon Kabushiki Kaisha Method for forming crystal
US5853478A (en) * 1986-03-28 1998-12-29 Canon Kabushiki Kaisha Method for forming crystal and crystal article obtained by said method
US5846320A (en) * 1986-03-31 1998-12-08 Canon Kabushiki Kaisha Method for forming crystal and crystal article obtained by said method
US5322711A (en) * 1989-07-21 1994-06-21 Minnesota Mining And Manufacturing Company Continuous method of covering inorganic fibrous material with particulates
US5405654A (en) * 1989-07-21 1995-04-11 Minnesota Mining And Manufacturing Company Self-cleaning chemical vapor deposition apparatus and method
US5547512A (en) * 1989-07-21 1996-08-20 Minnesota Mining And Manufacturing Company Continuous atomspheric pressure CVD coating of fibers
US20080072816A1 (en) * 2006-09-26 2008-03-27 Riess Walter H Crystalline structure and method of fabrication thereof
US7686886B2 (en) 2006-09-26 2010-03-30 International Business Machines Corporation Controlled shape semiconductor layer by selective epitaxy under seed structure
US7449065B1 (en) 2006-12-02 2008-11-11 Ohio Aerospace Institute Method for the growth of large low-defect single crystals
US20100072455A1 (en) * 2008-09-22 2010-03-25 Mark Albert Crowder Well-Structure Anti-Punch-through Microwire Device
US8153482B2 (en) 2008-09-22 2012-04-10 Sharp Laboratories Of America, Inc. Well-structure anti-punch-through microwire device
US9719165B2 (en) 2014-03-19 2017-08-01 Blue Wave Semiconductors, Inc. Method of making ceramic glass

Also Published As

Publication number Publication date
DE1290921B (de) 1969-03-20
BE658975A (en)) 1965-05-17
GB1070991A (en) 1967-06-07
NL6500600A (en)) 1965-07-29

Similar Documents

Publication Publication Date Title
US3346414A (en) Vapor-liquid-solid crystal growth technique
US4421592A (en) Plasma enhanced deposition of semiconductors
Joyce et al. Selective epitaxial deposition of silicon
US3493431A (en) Vapor-liquid-solid crystal growth technique
US3142596A (en) Epitaxial deposition onto semiconductor wafers through an interaction between the wafers and the support material
Wagner et al. Controlled vapor‐liquid‐solid growth of silicon crystals
JPS63188938A (ja) 窒化ガリウム系化合物半導体の気相成長方法
JPS6051847B2 (ja) 酸化層の形成方法
US4382837A (en) Epitaxial crystal fabrication of SiC:AlN
US3160521A (en) Method for producing monocrystalline layers of semiconductor material
US3139363A (en) Method of making a silicon article by use of a removable core of tantalum
US3769104A (en) Method of preventing autodoping during the epitaxial growth of compound semiconductors from the vapor phase
GB1160213A (en) A Method of Growing Semiconductor Crystals
US3637423A (en) Pyrolytic deposition of silicon nitride films
US3476593A (en) Method of forming gallium arsenide films by vacuum deposition techniques
US4489128A (en) Structure containing epitaxial crystals on a substrate
US3476617A (en) Assembly having adjacent regions of different semiconductor material on an insulator substrate and method of manufacture
US3573967A (en) Vapor-liquid-solid crystal growth technique
US3653991A (en) Method of producing epitactic growth layers of semiconductor material for electrical components
US3505127A (en) Vapor-liquid-solid crystal growth technique for the production of needle-like single crystals
JPH02185026A (ja) Ａｌ薄膜の選択的形成方法
Clarke Indium phosphide vapor phase epitaxy: A review
US3592706A (en) Selective etching technique for semiconductors
Lopez-Otero The dependence of the grain size of continuous epitaxial films on the growth conditions
US3536538A (en) Crystal growth technique