US3240623A - Method for pyrolytic production of semiconductor material - Google Patents

Method for pyrolytic production of semiconductor material Download PDF

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Publication number
US3240623A
US3240623A US155030A US15503061A US3240623A US 3240623 A US3240623 A US 3240623A US 155030 A US155030 A US 155030A US 15503061 A US15503061 A US 15503061A US 3240623 A US3240623 A US 3240623A
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rods
heater elements
pyrolytic
heated
semiconductor material
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Expired - Lifetime
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US155030A
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English (en)
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Heim Max
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Siemens and Halske AG
Siemens AG
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Siemens AG
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/62—Heating elements specially adapted for furnaces
    • H05B3/64—Heating elements specially adapted for furnaces using ribbon, rod, or wire heater
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B41/00—Obtaining germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Definitions

  • My invention relates to the pyrolytic production of semiconductor material, and has as its general object the improvement of the etficiency and economy of such production by reducing the processing time required and affording, within the same equipment, the simultaneous production of a much larger number of products than heretofore producible in a single operation.
  • my invention relates to a method and apparatus for the production of semiconductor material, particularly silicon, by thermal dissociation of a gaseous compound of the semiconductor material and precipitation of the semiconductor material onto a multiplicity of carrier or core rods consisting of the same material directly heated by passing electric current through the rods.
  • the semiconductor rods employed as carriers or cores in pyrolytic production methods being of extreme purity, have an extremely high specific electric resistance when in cold condition and become appreciably conductive to electric current only at or near incandescent temperatures. Consequently, for maintaining the core rods by direct passage of electric current at the high temperature required for pyrolytic decomposition and precipitation of the semiconductor substance, particularly silicon, it is necessary to first preheat the core rods until they become capable of carrying the electric current required for further maintenance and further increase of their temperature.
  • the heating, of the cores or carriers, required for reducing the specific electric resistance, prior to commencing the pyrolytic production process proper is obtained by first filling the reaction vessel, in which the core rods are mounted, with a protective gas of relatively good heat conducting properties, particularly hydrogen, and by placing heater elements as close as feasible to the carrier rods, or at least to a number of those rods accommodated in the processing vessel.
  • a protective gas of relatively good heat conducting properties particularly hydrogen
  • the heater elements are inactivated or switched-oft and are moved out of the reaction chamber into an adjacent space, such as into a container filled with air or protective gas, whereafter the reaction gas, containing the semiconductor compound to be pyrolytically reduced and precipitated, is supplied to the reaction chamber while passing electric current through the rods.
  • the transfer of heat from the source to the core or carrier rods is not exclusively due to radiation but is also effected by heat conductance so that the carrier rods can be heated up to the temperature required for good current conductance within a much shorter period of time than heretofore required.
  • the reaction vessel can be given any desired large size because it is no longer necessary to use a quartz vessel which in practice can be made to a maximum diameter of about 180 mm.
  • the invention also affords the use of processing vessels consisting of metal and provided with cooling means. In consequence, the invention permits simultaneous precipitation of semiconductor material upon a very large number of carrier rods, for example about rods.
  • FIGS. 1, 2 and 3 illustrate a first embodiment of a pyrolytic processing apparatus in three different stages of operation respectively.
  • FIG. 4 illustrates in vertical section another modification of such apparatus.
  • FIG. 5 shows partly in section a portion of a further embodiment of such apparatus
  • FIGS. 6 and 7 are schematic sectional views of an embodiment of pyrolytic production apparatus in two different stages of operation respectively and utilizing the portion shown in FIG. 5
  • FIG. 8 illustrates two pairs of rods together with their electrical connections
  • FIG. 9 schematically shows some of the heater elements with their electrical connections.
  • the apparatus shown in FIGS. 1 to 3 comprises a table structure With a horizontal supporting ring 12.
  • a bell-shaped hood portion 21 is lifted off the table structure to make the top surface of the supporting ring 12 accessible.
  • the rod-shaped carriers of semiconductor material such as hyperpure silicon are mounted on the ring structure so as to form a peripheral row.
  • Two of these carrier rods are denoted by 11 and 11' in FIG. 1.
  • the rods are secured at their lower rod end only to respective holders on the ring structure 12 and extend in vertical upright positions.
  • the holders, into which the lower ends of the rods are inserted, insulate these rods from the carrier structure 12.
  • the rods are spaced from each other a small distance only in the peripheral direction and each two or more of them are connected at the top by an electrically conducting bridge piece of the same hyperpure semiconductor material.
  • This is shown in greater detail in FIG. 8 for two pairs of mutually adjacent carrier rods 11 and 11' mounted in respective insulated holders 81 and 81 on the supporting ring 12 and connected at their top ends by bridge pieces 23.
  • the reaction chamber located within the hood 21 is tightly closed by a cover 13 which is mounted on a ported guide rod 14 and thereby displaceable in the vertical direction.
  • mounteded on the bottom side of the cover 13 and downwardly suspended therefrom are electric heating elements in a concentric annular arrangement. Two of these heating elements are shown in FIG.
  • Each heating element may consist of a rod-shaped heating resistor as used in electric furnaces. That is, each of the resistance elements 16, 16' is insulated from the cover plate 13 and connected in an electric heating circuit (FIG. 9) which, when energized by closing switch S16, causes the heating elements to be heated to incandescent temperature.
  • Each heating element may also be formed by a heater winding embedded in a metal pipe, such tubular electric heaters being of the kind used for example in conventional hot plates, stoves and baking ovens.
  • the upper side of the cover 13 may be equipped with another concentric ring arrangement of semiconductor carrier rods of which two are shown in FIG. 1 and denoted by 15 and 15', these rods consisting of the same hyperpure material, such as silicon as in the rods 11, 11, to constitute respective cores for the pyrolytic precipitation process.
  • the heater elements 16, 16' are lowered into a cupshaped tank 17 which is gastightly joined at its rim with the carrier ring 12.
  • the ring 12 and the cover 13 are preferably provided with respective cooling devices such as tubular coils traversed by cooling water (not shown).
  • a gasket or sealing ring is located at 18 between the supporting ring 12 and the cover 13 so that during pyrolytic operation, with the cover 13 in the position shown in FIG. 1, a hermetic closure of the reaction space within the hood 21 relative to the interior of the tank 17 is secured.
  • the hood 21 is lowered onto the carrier ring 12, and the reaction chamber now enclosed within the hood 21 is filled with a protective gas, for example hydrogen.
  • a protective gas for example hydrogen.
  • the protective gas can be introduced through fitting 14a to the hollow guide rod 14 and thence against baffle plate 13' which distributes the gas over the rods in the reaction space.
  • the reaction gas can also be introduced in the same manner.
  • the hood 21 is provided with a cooling coil 22 for maintaining it at relatively low temperature during pyrolytic precipitation. The residual waste gases are withdrawn through connection 21a.
  • the guide 14 is shifted to the position shown in FIG. 2.
  • the tank 17, by means of connection 17a, is preferably filled with the same gas that is also contained in the reaction chamber proper.
  • the peripheral row of heater elements 16, 16' is now located close to the outer row of the silicon core rods. Now, the heater elements which are provided with the necessary current supply leads (shown in FIG. 9) are electrically heated.
  • the core rods are then heated substantially along their entire length by heat radiation and also by heat conductance since the surrounding gas is of good heat conductance and consists, for example, of hydrogen.
  • the core rods are likewise provided with current supply leads which are connected for example to the rod holders 81 and 81' of each two adjacent rods 11, 11 as shown in FIG. 8, thus being connected through resistors R11 with a voltage source when switch S11 is closed.
  • the core rods When during the heating-up performance the core rods have assumed such a high temperature that the current passing through the core rod assumes a value sufficient for heating the core rod up to a higher temperature without additional heat from the heater elements, the heater elements are switched-off and the cover 13 on guide rod 14 is lowered to the position shown in FIG. 3 so that the reaction chamber 32 within hood 21 is hermetically separated from the space in tank 17 as apparent from FIG. 3.
  • cover 13 is further equipped on its upper side with additional core rods 15, 15 in an annular arrangement concentric to that of the outer core rods 11, 11, then the inner row of core rods 15, 15' now also becomes electrically conductive due to heat transfer from the outer core rods 11, 11 and assumes the same incandescent temperature as the rods in the outer row.
  • the gaseous semiconductor compound to be decomposed and precipitated for example silico-chloroform
  • the reaction chamber 32 preferably together with hydrogen and under the influence of the high temperature of the silicon core rods, which are preferably between 1,000 and 1,200 C., and is dissociated with formation of silicon which precipitates onto the carrier rods, thus thickening their diameter.
  • the silicon core rods which are preferably between 1,000 and 1,200 C.
  • the above-described tank 17 is eliminated.
  • the ring-shaped arrangement of heating elements is suspended from a plate 13.
  • the hood 21 carries a massive partitioning wall 41 which, when the plate 13 is raised to the illustrated top position, provides, with the aid of the peripheral gasket (not shown), for a hermetic seal between the reaction chamber 46 and the upper space 47 in which then the heater elements 16, 16' are located.
  • the core rods .11, 15 are mounted on a supporting plate 42 in two concentric ring arrangements of holders 43 and 44.
  • the cover plate 13 with the suspended heater elements 16, 16' is lowered so that the rod-shaped heater elements are located between the two concentric annular rows of core rods and both rows are simultaneously heated to the temperature required for good conductance of the electric current. Thereafter, the plate '13 with the heater elements is lifted to the position shown in FIG. 4 and the pyrolytic operation proper is commenced.
  • FIG. 5 shows an enlarged portion of another apparatus for performing the method.
  • the complete apparatus embodying FIG. 5 is being described hereirrbelow with reference to FIGS. 6 and 7.
  • the enlarged portion according to FIG. 5 serves to provide for a hermetic seal of the reaction chamber by closure means connected with the heater elements.
  • Several rod-shaped heater elements are grouped in parallel to a cluster 51 and fastened in a holder ring 52.
  • a valve cone 53 is mounted on a rod 66 which coaxially traverses the cluster of heater elements and is povided with spring means 67 tending to hold the disc 53 in closing position.
  • valve cone 53 closes a conical bore in a carrier plate 54 on which the holders 55 (for the core rods are mounted, of which two are shown in FIG. 5 and denoted by 56 and '56.
  • FIG. 6 shows a processing apparatus provided with closure means according to FIG. 5.
  • the apparatus is shown to comprise five concentric annular rows of semiconductor 'core rods denoted by 61 to 65 respectively.
  • the holder ring 52 is shifted to raised position and the clusters of heater elements mounted thereon are located between the annular rows 63 and 64 to simultaneously heat both rows. After the core rods in these rows become conductive for sustaining and continuing the heating by means only of the electric current passing through these rods, the carrier ring 52 is lowered and the ceiling of the reaction chamber 71 then takes place by the means and in the manner described above with reference to FIG. 5.
  • the apparatus prefferably provides a tank 72 in order to provide a seal for the guide 73 of the carrier plate 52 and also for preventing the ingress of air or other gas during lowering of the heater elements and for preventing the influx of air in the event of leakage at the closure valves 53.
  • FIG. 7 shows the apparatus of FIG. 6 with the carrier ring 22 in lowered position. Due to heat transfer from the incandescent rows 63 and 64 to the inner rows 61, 62 and the outer row 65, all core rods become heated to the temperature necessary for good current conductance. Thereafter, the reaction gas mixture is introduced into the reaction chamber 71 by suitable means (not shown) similar to that of FIGS. 1 to 3. For measuring the corerod temperature during pyrolytic precipitation, the watercooled bell '74 of the apparatus is provided with observation windows 75.
  • the method and apparatus according to the invention is also applicable for the production of other semiconductor material, for example, germanium.
  • the carrier rods also consist of germanium and the gaseous mixture to be dissociated consists essentially of a gaseous germanium compound, particularly a germanium halogenide such as germanium chloroform.
  • the method of producing semiconductor material by pyrolytic reduction and precipitation of the material from a gaseous compound thereof onto a multiplicity of core rods of the same material heated by electric current passing through the rods which comprises the steps of (a) filling the reaction space, prior to introduction of the gaseous semiconductor compound, with a heatconducting non-oxidizing gas when the rods are still in cold condition, and placing theater elements close to at least part of the rods;
  • the method of producing silicon by pyrolytic p-recipitation from a reaction gas, containing a silicon halogen compound and hydrogen, onto silicon rods heated by electric current passing through the rods which comprises the steps of (a) filling the reaction space, prior to introduction of the gaseous semiconductor compound, with a heatconducting non-oxidizing gas when the rods are still in cold condition, and placing separate electric heater elements in proximity and substantially along the entire length of at least part of the rods;
  • the method of producing semiconductor material by pyrolytic reduction and precipitation of the mate-rial from a gaseous compound thereof onto a multiplicity of core rods of the same material heated by electric current passing through the rods which comprises the steps of (a) filling the reaction space, prior to introduction of the gaseous semiconductor compound, with a heat-conducting non-oxidizing gas when the rods are still in cold condition, and placing heater elements close and along only some of the semiconductor rods;

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
US155030A 1960-11-30 1961-11-27 Method for pyrolytic production of semiconductor material Expired - Lifetime US3240623A (en)

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Application Number Priority Date Filing Date Title
US490757A US3342161A (en) 1961-11-27 1965-07-26 Apparatus for pyrolytic production of semiconductor material

Applications Claiming Priority (1)

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DES71471A DE1281396B (de) 1960-11-30 1960-11-30 Vorrichtung zum Herstellen von kristallinem Halbleitermaterial

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US (1) US3240623A (xx)
BE (1) BE610917A (xx)
CH (1) CH414572A (xx)
DE (1) DE1281396B (xx)
GB (1) GB949649A (xx)
NL (1) NL271345A (xx)
SE (1) SE301632B (xx)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3425878A (en) * 1965-02-18 1969-02-04 Siemens Ag Process of epitaxial growth wherein the distance between the carrier and the transfer material is adjusted to effect either material removal from the carrier surface or deposition thereon
US3438810A (en) * 1966-04-04 1969-04-15 Motorola Inc Method of making silicon
US3472684A (en) * 1965-01-29 1969-10-14 Siemens Ag Method and apparatus for producing epitaxial crystalline layers,particularly semiconductor layers
US3486933A (en) * 1964-12-23 1969-12-30 Siemens Ag Epitactic method
US3540986A (en) * 1967-05-15 1970-11-17 Louis Joseph Guarino Distillation condensation apparatus with vapor compression and semipermeable membrane
US3641973A (en) * 1970-11-25 1972-02-15 Air Reduction Vacuum coating apparatus
US3649339A (en) * 1969-09-05 1972-03-14 Eugene C Smith Apparatus and method for securing a high vacuum for particle coating process
US4173944A (en) * 1977-05-20 1979-11-13 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Silverplated vapor deposition chamber
US4179530A (en) * 1977-05-20 1979-12-18 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for the deposition of pure semiconductor material

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2196767A (en) * 1937-07-10 1940-04-09 Eastman Kodak Co Pyrolysis apparatus
US2986451A (en) * 1959-04-30 1961-05-30 Mallinckrodt Chemical Works Method of preparing elemental silicon
US3010797A (en) * 1957-07-26 1961-11-28 Robert S Aries High purity elemental silicon
US3011877A (en) * 1956-06-25 1961-12-05 Siemens Ag Production of high-purity semiconductor materials for electrical purposes
US3023087A (en) * 1957-09-07 1962-02-27 Wacker Chemie Gmbh Process for the production of extremely pure silicon
US3063871A (en) * 1959-10-23 1962-11-13 Merck & Co Inc Production of semiconductor films
US3128154A (en) * 1958-12-19 1964-04-07 Eagle Picher Co Process for producing crystalline silicon over a substrate and removal therefrom
US3140922A (en) * 1957-03-07 1964-07-14 Int Standard Electric Corp Methods and apparatus for treating reactive materials
US3147141A (en) * 1959-05-04 1964-09-01 Ishizuka Hiroshi Apparatus for the manufacture of high purity elemental silicon by thermal decomposition of silane

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2196767A (en) * 1937-07-10 1940-04-09 Eastman Kodak Co Pyrolysis apparatus
US3011877A (en) * 1956-06-25 1961-12-05 Siemens Ag Production of high-purity semiconductor materials for electrical purposes
US3140922A (en) * 1957-03-07 1964-07-14 Int Standard Electric Corp Methods and apparatus for treating reactive materials
US3010797A (en) * 1957-07-26 1961-11-28 Robert S Aries High purity elemental silicon
US3023087A (en) * 1957-09-07 1962-02-27 Wacker Chemie Gmbh Process for the production of extremely pure silicon
US3128154A (en) * 1958-12-19 1964-04-07 Eagle Picher Co Process for producing crystalline silicon over a substrate and removal therefrom
US2986451A (en) * 1959-04-30 1961-05-30 Mallinckrodt Chemical Works Method of preparing elemental silicon
US3147141A (en) * 1959-05-04 1964-09-01 Ishizuka Hiroshi Apparatus for the manufacture of high purity elemental silicon by thermal decomposition of silane
US3063871A (en) * 1959-10-23 1962-11-13 Merck & Co Inc Production of semiconductor films

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3486933A (en) * 1964-12-23 1969-12-30 Siemens Ag Epitactic method
US3472684A (en) * 1965-01-29 1969-10-14 Siemens Ag Method and apparatus for producing epitaxial crystalline layers,particularly semiconductor layers
US3425878A (en) * 1965-02-18 1969-02-04 Siemens Ag Process of epitaxial growth wherein the distance between the carrier and the transfer material is adjusted to effect either material removal from the carrier surface or deposition thereon
US3438810A (en) * 1966-04-04 1969-04-15 Motorola Inc Method of making silicon
US3540986A (en) * 1967-05-15 1970-11-17 Louis Joseph Guarino Distillation condensation apparatus with vapor compression and semipermeable membrane
US3649339A (en) * 1969-09-05 1972-03-14 Eugene C Smith Apparatus and method for securing a high vacuum for particle coating process
US3641973A (en) * 1970-11-25 1972-02-15 Air Reduction Vacuum coating apparatus
US4173944A (en) * 1977-05-20 1979-11-13 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Silverplated vapor deposition chamber
US4179530A (en) * 1977-05-20 1979-12-18 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for the deposition of pure semiconductor material

Also Published As

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SE301632B (xx) 1968-06-17
NL271345A (xx)
CH414572A (de) 1966-06-15
GB949649A (en) 1964-02-19
BE610917A (fr) 1962-03-16
DE1281396B (de) 1968-10-24

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