US3177373A - Transistorized loading circuit - Google Patents

Transistorized loading circuit Download PDF

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Publication number
US3177373A
US3177373A US65875A US6587560A US3177373A US 3177373 A US3177373 A US 3177373A US 65875 A US65875 A US 65875A US 6587560 A US6587560 A US 6587560A US 3177373 A US3177373 A US 3177373A
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United States
Prior art keywords
transistor
circuit
emitter
loading
collector
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Expired - Lifetime
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US65875A
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English (en)
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Richard H Graham
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Individual
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Priority to US65875A priority Critical patent/US3177373A/en
Priority to GB35467/61A priority patent/GB933667A/en
Priority to DEU8406A priority patent/DE1171953B/de
Priority to FR876807A priority patent/FR1304388A/fr
Priority to CH1225861A priority patent/CH404722A/de
Application granted granted Critical
Publication of US3177373A publication Critical patent/US3177373A/en
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H03K3/288—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable using additional transistors in the input circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01—Shaping pulses
    • H03K5/02—Shaping pulses by amplifying

Definitions

  • This invention relates generally to transistorizedswitching circuits and in particular relates to means for providing high voltage output from a characteristically low voltage circuit.
  • glow discharge lamps such as neon lamps
  • glow discharge lamps are particularly suitable for these mentijonedutilizations, a relatively large voltage. is required tolfire and thereby light one.
  • neon lamps have been readily adaptable'for vacuum tube circuits, 'it is a more'difficult problem to use them with transistor circuitry.
  • MV arnultivibrator
  • the MV is ageneral class of switching circuits which include free running, bistable and monostable devices.
  • a conventional Eccles-Jordan bistable. MV is discussed herein, detailed reference to which is found in Junction Transistor Electronics, Richard B. Hurley, pp. 4244-27. 'As is readily observed, the bistable MV comprises two transistors, each in a grounded?
  • the two possible states of a MV transistor comprise, in general, conduc tion or non-conduction, these states being commonly referred to respectively as ON or OFF.
  • the conventional scheme for sampling or utilizing the information represented by the electrical state of an MV transistor is in general to couple an output load resistor between the MV collector and. ground. It is readily apparent, however, that the output voltage on the collector can be no larger than the MV supply voltage and therefore certainly for conventional 'MV circuits not large enough to fire a neon glow lamp. It should, of course, be noted that special high voltage transistors are available which can be incorporated into MV design. These high voltage transistors, which are incidentally expensive, if of good quality unfortunately present another problem of limited frequency response and ultimately of the MV speed of operation.
  • a MV can be designed to operate in excess of megacycles, but the use of a high voltagegermanium transistor limits the MV operation to at best 100 kilocycles. It is MV transistor is not a feasible means of providing high voltage output signals.
  • a conventional means of obtaining a high voltage output from an MV is to couple an amplifier stage to the collector of the MV transistor.
  • This approach becomes complex, however, because a single amplifier stage has a tendency to load down the MV and disrupt or degrade its operation.
  • a buffer stage interposed between thejMV collector output and the amplification stage.
  • this approach requires two supplemental transistors in addition to each MV transistor thus creating a serious economic problem where a great plurality of MV circuits are employed,
  • the present invention afio-rds a simple and economical means for problem of a high voltage output from a fundamentally different point of view than do the conventional means.
  • conventional loading circuitry generally attempts to utilize the available voltage on the collector of the grounded emitter MV transistor.
  • conventional v circuitry must be prepared to provide high impedance loading to prevent degrading the MV operation. Even then minor fluctuations in the loading circuit may be able to disrupt the MV operation.
  • -It is a basic intent of the present invention to load the MV circuit as painlessly as possible, that is, to extract the MV information while preventing the MV from becoming aware that it is being loaded.
  • the invention performs the loading operation at the emitter of a grounded emitter transistor.
  • a transistor switch of vvirtually zero impedance is inserted into the MV emitter 'leg with this switch performing the high voltage switching operation.
  • the present invention performs the heretofore difficult operation of providing high voltage output while preserving high frequency characteristics.
  • circuit 11 comprises a pair of identical cross coupling resistors 13 and 13' with resistor 13 coupled from the base of transistor '12 to the collector of transistor 12' and resistor 13' similarly connected between the base of transistor 12:
  • Circuit 11 is powered byv a collector Isupply voltage applied to" terminal 16 and a base supply voltage applied to terminal 17.
  • a pair of identical collec'torresistors 18 and 18' are connected respectively between the supply terminal 16 and the collectors of transistors 12 and 12 and a pair-of identical base resistors 19, and 19' are respectively coupled 'between supply terminal 17 and the bases of transistors 12 and 12'.
  • circuit llas conventionally employed would have both the emitters 21 and 21 of transis tors Hand 12" connected directly to ground. The 'con- 1 ventional manner of infoumation utilization would then be to' directly employ thepotentials at the vcollector of transistor '12 or 12.
  • circuit 11 is completely symmetrical, the description here: inafter refers in general to only one side thereof, namely, transistor 12 and its associated loading circuit 22.
  • circuit 22 principal component of circuit 22 is a grounded base transistor 24 which hasitsemitter 26 coupled to emitter 21. It is of particular importance to note that the transis tor 24 must be. of opposite polarity to the 'MV transistor 7 12'. That is, since transistor 12 ifof type NPN, transistor 2d musts'be PNP. I This latter specification is necessary to provide for a continuous current flow from emitter 21 into emitter 26, the need for which willbecome evident upon discussing the operation of the invention,
  • transistor 24 has an output terminal 27 coupled directly to the collector 28 thereof; A negative battery supply 29 is then coupled from ground to collec- I ter 28 seriallythrouigh a load resistor 31. 7
  • the collector potential to indicate theinformation state of the MV circuit 11
  • transistor 12' to trigger an isolated external loading circuit 22 which is capable of handling It is note d'that the transistor relatively high voltages. 24 functions substantially as a switch in much the same Thus when transistor 24 negative potential of supply 29. When transistor 24 is ON, terminal 27 is brought to essentially ground potential. v
  • emitter 21 of transistor 12 couples directly to the emitter 26 of grounded base transistor 24:1
  • transistor 24 when transistor 12 is OFF substantially no current flows therethrough and therefore transistor 24 is'als'o brought into-the OFF state.
  • transistor 12 When transistor 12 is'OFF, it, of course, doesnot matter whether emitter 21 is grounded or not. It now becomes readily apparent that transistor 241s turnedONand OFF in sister 12 is ON, emitter 21 is still for all practical purposes coupled directly to' ground. However, when transistor 12 is ON, it is also feeding a high currentinto transistor 24 thereby turning it ON also. This latter exact. correspondence with the electrical state of transistor 12. lt'is further apparent'that transistor 24 is being switched by transistor .12 while transistor 12 is virtually unaware that it is performing this switching function.
  • transistor 24 of an inexpensive type can readily display voltage swings in excess of volts without any deterioration in frequency re sponse.
  • transistor 12 can also 'be a simple inexpensive component not requirin any unusual charac teristics, Thusjthe only practical variable-in determining the voltage swing available at terminal 27' is the size of supply 29.
  • the present invention provides an excellent means for amplifying the output voltage of a conventional transistorized Eccles-Jordan bistable MV circuit without disrupting the operation thereof. It should be further pointed out that thezpresent invention can be utilized in almost any situation .where the output of a grounded emitter transistor is to be amplified without disrupting or loading down the loaded circuit.” Therefore, inasmuch as the foregoing description was made with particular reference to a preferred embodiment of the invention, it is to be understood that same was by way of example .and illustration only and is not to be taken. by way 'of limitation, the spirit and scope of this invention being limited only by the terms-of the appended claim.
  • a multivibrator circuit the combination of a grounded emitter oriented transistor, said transistor being one of two crosscou pled transistors connected to a first power supply of one polarity with respect to ground for operation as a multivibrator, a transistor voltage pulse I
  • This output voltage is al- I most three times as large. as the 16 volt swing available amplifier connected for receiving a direct input pulse from References Cited by the Examiner the multivibrator with a minimum loading effect on the UNITED STATES PATENTS multivibrator and for providing an amplifier output pulse
  • said voltage amplifier comprising a resistor, a second powiifif i z 25:3 5 er supply of an opposite polarity with respect to ground, 5 2:963:648 12/60 Baskin et a1 307885 and a loading transistor having an emitter, base and a collector; said base being directly connected to ground; said emitter being directly series connected to the emitter of said grounded emitter oriented transistor for receiving the OTHER REFERENCES input from the multivibrator and for providing a low im- 10 pedance path to ground, said loading transistor having an opposite polarity to that of said grounded emitter oriented transistor, said resistor being connected between said 001- I IBM Tachmcal Dlsclosure Buuetm lector and said second power supply for reverse biasing February 1960- the collector-base junction and for deriving said amplifier output pulse, and an output terminal connected to said 15 ARTHUR GAUSS Primary Examiner collector of said loading transistor for providing such GEORGE N. WESTBY, JOHN W

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Electronic Switches (AREA)
US65875A 1960-10-28 1960-10-28 Transistorized loading circuit Expired - Lifetime US3177373A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US65875A US3177373A (en) 1960-10-28 1960-10-28 Transistorized loading circuit
GB35467/61A GB933667A (en) 1960-10-28 1961-10-02 A transistorized loading circuit
DEU8406A DE1171953B (de) 1960-10-28 1961-10-18 Transistorgesteuerter Lastkreis
FR876807A FR1304388A (fr) 1960-10-28 1961-10-24 Circuit de charge à transistors
CH1225861A CH404722A (de) 1960-10-28 1961-10-24 Schaltungsanordnung zur Durchführung von Schaltoperationen an einem Belastungskreis

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US65875A US3177373A (en) 1960-10-28 1960-10-28 Transistorized loading circuit

Publications (1)

Publication Number Publication Date
US3177373A true US3177373A (en) 1965-04-06

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ID=22065744

Family Applications (1)

Application Number Title Priority Date Filing Date
US65875A Expired - Lifetime US3177373A (en) 1960-10-28 1960-10-28 Transistorized loading circuit

Country Status (5)

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US (1) US3177373A (de)
CH (1) CH404722A (de)
DE (1) DE1171953B (de)
FR (1) FR1304388A (de)
GB (1) GB933667A (de)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3430070A (en) * 1965-02-17 1969-02-25 Honeywell Inc Flip-flop circuit
US3535699A (en) * 1968-01-15 1970-10-20 Ibm Complenmentary transistor memory cell using leakage current to sustain quiescent condition
US3546682A (en) * 1966-03-08 1970-12-08 Int Standard Electric Corp Memory using integrated circuits as unitary crosspoints
US3624620A (en) * 1969-06-23 1971-11-30 Honeywell Inc Memory address selection circuitry

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2772410A (en) * 1954-09-30 1956-11-27 Ibm Transistor indicator circuit
US2880330A (en) * 1954-06-29 1959-03-31 Bell Telephone Labor Inc Non-saturating transistor trigger circuits
US2963648A (en) * 1957-06-13 1960-12-06 Thompson Ramo Wooldridge Inc Phase detector
US2976487A (en) * 1958-08-07 1961-03-21 Bell Telephone Labor Inc Stabilized timing circuit

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL192335A (de) * 1953-12-18
DE1044880B (de) * 1955-09-02 1958-11-27 Siemens Ag Steuerschaltung mit zwei Transistoren
DE1077706B (de) * 1958-03-29 1960-03-17 Siemens Ag Einrichtung zum Schalten und Steuern von Starkstromkreisen

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2880330A (en) * 1954-06-29 1959-03-31 Bell Telephone Labor Inc Non-saturating transistor trigger circuits
US2772410A (en) * 1954-09-30 1956-11-27 Ibm Transistor indicator circuit
US2963648A (en) * 1957-06-13 1960-12-06 Thompson Ramo Wooldridge Inc Phase detector
US2976487A (en) * 1958-08-07 1961-03-21 Bell Telephone Labor Inc Stabilized timing circuit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3430070A (en) * 1965-02-17 1969-02-25 Honeywell Inc Flip-flop circuit
US3546682A (en) * 1966-03-08 1970-12-08 Int Standard Electric Corp Memory using integrated circuits as unitary crosspoints
US3535699A (en) * 1968-01-15 1970-10-20 Ibm Complenmentary transistor memory cell using leakage current to sustain quiescent condition
US3624620A (en) * 1969-06-23 1971-11-30 Honeywell Inc Memory address selection circuitry

Also Published As

Publication number Publication date
FR1304388A (fr) 1962-09-21
DE1171953B (de) 1964-06-11
CH404722A (de) 1965-12-31
GB933667A (en) 1963-08-08

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