US3110637A - Method of producing semi-conductive electrode systems - Google Patents

Method of producing semi-conductive electrode systems Download PDF

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Publication number
US3110637A
US3110637A US785374A US78537459A US3110637A US 3110637 A US3110637 A US 3110637A US 785374 A US785374 A US 785374A US 78537459 A US78537459 A US 78537459A US 3110637 A US3110637 A US 3110637A
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United States
Prior art keywords
aluminum
electrode
mass
layer
alloyed
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Expired - Lifetime
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US785374A
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English (en)
Inventor
Jochems Pieter Johan Wilhelmns
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US Philips Corp
North American Philips Co Inc
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US Philips Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Definitions

  • This invention relates to a method of producing semiconductive electrode-systems, such as transistors and crystal diodes, which contain a semi-conductive body, which may, for example, consist of germanium or silicon, to which at least one electrode is alloyed which consists of an alloy of aluminum and at least one other component.
  • the invention is based on the recognition of the fact that aluminum or an alloy containing aluminum can be more readily caused to fuse with a metal or an alloy which has already been alloyed to a semi-conductor body than with the semi-conductor bodies themselves.
  • another component of the electrode finally to be produced is alloyed to the semiconductor body after which aluminum is placed on this alloyed component and finally is fused therewith.
  • the aluminum can be applied either as a pure metal or in the form of an alloy with another element.
  • the amount of aluminum or aluminum-alloy added in this manner can be small so that the proportion of aluminum of the finally produced electrode is less than 5%.
  • the aluminum or the alloy containing alu minum is added to the alloyed component as a fine powder dispersed in a binder.
  • This component preferably is in the solid state when the aluminum is applied.
  • a semi-conductor body 1 consisting of n-type germanium having a specific resistivity of 3 ohm-cm. and a thickness of 150 microns there is placed a pellet 2 of lead (FIG. 1).
  • the two members are fused to one another in a jig (not shown) at 600 C. so that an alloyed body 3 is formed (FIG. 2).
  • This body consists of lead which has absorbed a small amount of germanium.
  • a small amount of a dispersion 4 of 40 gms. of powdered aluminum in a solution of 20 gms. of methacrylate in cos. of Xylene is applied to both bodies (FIG. 4).
  • the applied amount of the dispersion is not critical.
  • the assembly is again heated to 750 C. so that fusion recurrs. After cooling it is found that the electrodes 5 produced (FIG. 5) have absorbed an amount of aluminum such that they form rectifying contacts having a high emitter efiiciency.
  • a base contact 6 consisting of a nickel wire can be applied to the body 1 in the usual manner with the aid of tin solder '7.
  • a similar method can be used in which there is substituted for the powdered aluminum in the dispersion a powder consisting of 28% of aluminum and 72% of silver. This melts at about 560 C., and can be fused with the already alloyed component 3 at a temperature slightly higher than this melting point, for example 600 C.
  • a method of forming a p-type region in a body of semiconductor material comprising fusing and alloying to said body a mass of metal, cooling the fused mass to form a solid alloyed electrode on the body, thereafter painting said solid alloyed electrode with finely-divided aluminum dispersed in a liquid binder to form a layer thereon, thereafter drying the layer, refusing the mass and layer to incorporate the aluminum into the electrode and into an underlying portion of the body, and thereafter cooling the mass to solidify same in contact with the body.
  • a method of forming a rectifying contact to an n-type body portion of germanium semiconductor material comprising fusing and alloying to said body portion a mass of lead, cooling the fused mass to form a solid alloyed electrode on the body, thereafter painting said solid alloyed electrode with finely divided aluminum dispersed in a liquid binder to form a layer thereon, wherein the dispersion contains an amount of aluminum at which the final electrode contains more than zero but less than 5% of aluminum, thereafter drying the layer, refusing the mass and layer to incorporate the aluminum into the electrode and into an adjacent region of the body, and thereafter cooling the mass to solidify same in contact with the body forming a rectifying contact thereto having a high emitter efficiency.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Conductive Materials (AREA)
  • Powder Metallurgy (AREA)
US785374A 1958-01-14 1959-01-07 Method of producing semi-conductive electrode systems Expired - Lifetime US3110637A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL224040 1958-01-14

Publications (1)

Publication Number Publication Date
US3110637A true US3110637A (en) 1963-11-12

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US785374A Expired - Lifetime US3110637A (en) 1958-01-14 1959-01-07 Method of producing semi-conductive electrode systems

Country Status (6)

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US (1) US3110637A (de)
CH (1) CH367569A (de)
DE (1) DE1098616B (de)
FR (1) FR1213288A (de)
GB (1) GB906938A (de)
NL (2) NL108504C (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1332736A (fr) * 1962-06-08 1963-07-19 Radiotechnique Appareil pour le dépôt sur des grains d'alliages d'un métal pulvérulent en suspension dans un liquide

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2701326A (en) * 1949-11-30 1955-02-01 Bell Telephone Labor Inc Semiconductor translating device
US2781481A (en) * 1952-06-02 1957-02-12 Rca Corp Semiconductors and methods of making same
US2816850A (en) * 1953-12-30 1957-12-17 Bell Telephone Labor Inc Semiconductive translator
US2833678A (en) * 1955-09-27 1958-05-06 Rca Corp Methods of surface alloying with aluminum-containing solder
US2862840A (en) * 1956-09-26 1958-12-02 Gen Electric Semiconductor devices
US2931743A (en) * 1955-05-02 1960-04-05 Philco Corp Method of fusing metal body to another body
US2932594A (en) * 1956-09-17 1960-04-12 Rca Corp Method of making surface alloy junctions in semiconductor bodies
US2937961A (en) * 1955-11-15 1960-05-24 Sumner P Wolsky Method of making junction semiconductor devices

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2701326A (en) * 1949-11-30 1955-02-01 Bell Telephone Labor Inc Semiconductor translating device
US2781481A (en) * 1952-06-02 1957-02-12 Rca Corp Semiconductors and methods of making same
US2816850A (en) * 1953-12-30 1957-12-17 Bell Telephone Labor Inc Semiconductive translator
US2931743A (en) * 1955-05-02 1960-04-05 Philco Corp Method of fusing metal body to another body
US2833678A (en) * 1955-09-27 1958-05-06 Rca Corp Methods of surface alloying with aluminum-containing solder
US2937961A (en) * 1955-11-15 1960-05-24 Sumner P Wolsky Method of making junction semiconductor devices
US2932594A (en) * 1956-09-17 1960-04-12 Rca Corp Method of making surface alloy junctions in semiconductor bodies
US2862840A (en) * 1956-09-26 1958-12-02 Gen Electric Semiconductor devices

Also Published As

Publication number Publication date
NL108504C (de)
NL224040A (de)
DE1098616B (de) 1961-02-02
GB906938A (en) 1962-09-26
FR1213288A (fr) 1960-03-30
CH367569A (de) 1963-02-28

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