US3067139A - Method for treating materials having a high surface tension in the molten state in a crucible - Google Patents

Method for treating materials having a high surface tension in the molten state in a crucible Download PDF

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US3067139A
US3067139A US697141A US69714157A US3067139A US 3067139 A US3067139 A US 3067139A US 697141 A US697141 A US 697141A US 69714157 A US69714157 A US 69714157A US 3067139 A US3067139 A US 3067139A
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crucible
melt
slots
surface tension
aperture
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US697141A
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English (en)
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Goorissen Jan
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US Philips Corp
North American Philips Co Inc
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US Philips Corp
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L3/00—Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
    • B01L3/04—Crucibles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D41/00—Casting melt-holding vessels, e.g. ladles, tundishes, cups or the like
    • B22D41/005—Casting melt-holding vessels, e.g. ladles, tundishes, cups or the like with heating or cooling means
    • B22D41/01—Heating means
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/14—Crucibles or vessels
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/22—Furnaces without an endless core
    • H05B6/30—Arrangements for remelting or zone melting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/074—Horizontal melt solidification

Definitions

  • This invention relates to methods and devices for treating materials having a high surface tension in a molten state in a crucible.
  • materials having a high surface tension is used herein to denote materials, the surface tension of which in a molten state is so high that they do not wet the crucible.
  • the invention relates particularly to the treatment in a crucible of semi-conductive elements, such as germanium and silicon, and compounds such as indium antimonide, cadmium telluride and the like. The treatment of such substances frequently gives rise to difficulties of widely different origin. A few of these difficulties will be discussed hereinafter.
  • the substances are melted in crucibles made of graphite, which are arranged in a high-frequency electromagnetic field.
  • the electrical conductivity of the graphite is utilized, the conductivity of the crucibles sometimes prevents the melt from being satisfactorily agitated.
  • the crucible in other cases, it is also desirable for the crucible to be heated, however, there may arise the difliculty of uneven heating.
  • the present invention is based on recognition of the fact that in melting materials having a high surface tension the crucible can be provided with apertures, for example slits, disposed below the level of the molten material, provided that these slits do not exceed certain dimensions.
  • the method in accordance with the invention is characterized in that use is made of a crucible which, below the level of the material, is provided with at least one aperture of such maximum dimensions that the pressure produced by the surface tension of the material exceeds the hydrostatic pressure.
  • hydrostatic pressure is used to denote not only the pressure produced by gravity, but also that produced by other causes, for example by centrifugal forces.
  • FIG. 1 is a longitudinal sectional view of a crucible for purifying semi-conductive materials
  • FIG. 2 is a front elevation of this crucible
  • FIG. 3 is a vertical sectional view
  • FIG. 4 is an elevation of a crucible for drawing crystals
  • FIGURES 5 and 6 are a vertical sectional view and an elevation, respectively, of another device for drawing crystals
  • FIG. 7 is a vertical sectional view of a device for drawing crystals
  • FIG. 8 is a plan view of another embodiment of such a device.
  • PEG. 9 shows still a further modification.
  • FIG. 1 shows a crucible 1 made of graphite, which is particularly suited for use in the methods known as Zone levelling and zone refining, in which the crucible is heated by means of a high-frequency induction coil 2 shown diagrammatically. This method is described in United States Patent No. 2,739,088 by W. G. Pfann.
  • the end part of the crucible is provided with a saw-cut 3 which may extend to the bottom of the crucible.
  • T his is based on the following theory.
  • the pressure produced by the surface tension of the molten material generally is where 'y is the surface tension in dynes/cm, g is the acceleration due to gravity in cm./sec. and R and R are the radii of curvature of the surface of the liquid in two directions at right angles to each other in centimeters (see Am. Inst. of Physics Handbook).
  • This depth is amply suflicient for many applications.
  • a similar problem which can be simply solved by the 7 use of the invention, occurs in drawing crystals from a melt.
  • a crucible made from a conductive material for example graphite
  • induction coil coaxially arranged about the entire crucible.
  • the melt itself is strongly screened or shielded from the electromagnetic field by the crucible wall and consequently it is heated substantially by conduction and convection only.
  • the melt cannot be agitated as would be possible if the high-frequency field were to act directly upon the melt, for example, in a.
  • crucible made from insulating material for example, quartz.
  • crucibles made from such a material cannot be used satisfactorily for melting materials which, at room temperature, have a resistance such as to prevent a current, which is sufficiently large to produce melting, from being induced in these materials at this temperature.
  • a crucible which may have the construction shown in FIG- URES 3 and 4 or 5 and 6.
  • the crucible shown in FIG. 3 comprises a bottom 5 and a wall 6.
  • the latter is provided with a number of saw-cuts or slots '7 which extend to the bottom.
  • the crucible is surrounded by a coil 8.
  • the third embodiment shows the manner in which the invention can be used by controlling an object disposed in the crucible.
  • crystals can be drawn from a comparatively small crucible, referred to as the inner crucible, which is arranged in a larger crucible, the outer crucible; the contents of the two crucibles communicate through a small aperture in the inner crucible.
  • This method is described in British patent specification 754,- 767. in carrying out this method in practice, the dif ficulty arises that the inner crucible tends to float on the melt. it is difiicult to find a material having a higher specific gravity than the melt, while depressing the in ner crucible from above is complicated and gives rise to symmetry disturbances in the proximity of the plane of solidification of the cr stal, which result in dislocations.
  • the device shown in FIG. 7 uses an outer crucible 15 having a bottom 16 provided with a bore 17.
  • An inner crucible 1% fits within the outer crucible with a small amount of clearance.
  • the melt 2t flows from the outer crucible to the inner crucible as a crystal is withdrawn therefrom.
  • the advantage accruing from the use of the inner crucible 18 consists in that the properties of the said crystal can be modified by changing the composition of the contents of this inher crucible without the materially larger contents of the other crucible having to be influenced. Diffusion through the duct 1) is negligible.
  • the inner rucibie is provided with a handle 22 which passes through the bore 17 with some clearance.
  • This handle can be raised and lowered by a device (not shown) acting upon its lower end, as is indicated by arrows.
  • a device not shown acting upon its lower end, as is indicated by arrows.
  • the surface tension prevents the melt from flowing away through the narrow slit between the handle 22 and the bore 17
  • FIG. 7 A further application of the invention, which is independent of the use of a separate inner crucible and consequently can be used in other devices also, is likewise shown in FIG. 7.
  • the bottom of the crucible is provided with a small aperture through which the impurity can be supplied.
  • the handle 22 is provided with a narrow duct 23 of so small a diameter that the melt does not flow through this duct.
  • the active impurity can be introduced as a pill or a thin Wire into the melt through the duct 23 by means of a rod.
  • R R halt the diameter of the duct. Consequently 000 i he diameter of the duct should be smaller
  • the above-described device permits of these rapid variations by providing the upper rim of the outer crucible 15 with a number of slits 25 which are concentrated at two opposite portions thereof, as is shown in FIG. 8.
  • the plane of symmetry is designated X-X.
  • a number of slits 26 are provided in the inner crucible 18.
  • the plane of symmetry thereof is designated Y-Y.
  • the inductive coupling of the inner crucible to a high-frequency coil arranged without the outer crucible can be varied. This results in a variation of the temperature of the inner crucible.
  • This variation may, for example, be used to produce a local modification of the properties of the withdrawn crystal, more particularly of its conductivity type.
  • This variation of the temperature of the inner crucible may also be ensured by providing slits in the outer crucible only and varying the strength or the direction of the high-frequency field.
  • the final example relates to the case where an electric current must be passed through the melt. This may be desirable for a variety of reasons, for example also for modifying the properties of a crystal drawn from the melt.
  • a conductor it may be necessary or desirable for a conductor to be passed through the bottom or the wall of the crucible.
  • Such a conductor can be sealed in or can be secured in the crucible by sealing material, but this frequently gives rise to diihculty.
  • such a conductor can be arranged freely in an aperture provided in the bottom of the wall of a crucible, provided that the dimensions of the slit produced do not exceed the above-mentioned limits.
  • FIG. 9 Such a device in accordance with the invention is shown in FIG. 9. It comprises a crucible 3% made of a refractory material, for example quartz, graphite, aluminum oxide or beryllium oxide, and having an aperture 31 in its bottom.
  • a refractory material for example quartz, graphite, aluminum oxide or beryllium oxide
  • a conductive rod which is supported in a manner not shown in the figure, is passed through this aperture.
  • This rod may, for example, comprise a core 32 of tungsten which is coated with a layer of carbon or graphite 33. This coating is provided because the surface tension of molten metals and molten semi-conductive materials is higher with respect to carbon than with respect to tungsten, so that the melt is less likely to flow away.
  • a crystal 35 is drawn.
  • a source of electric current 36 can be connected to the rod 32, 33 and to the crystal 35, as is shown diagrammatically.
  • the coating of the core 32 may alternatively consist of an insulating material, for example quartz. in this event, the upper end of the core is not coated.
  • a method of operating on semiconductive materials having high surface tension when molten comprising melting said semiconductive material in a crucible whose wall portions have an aperture extending completely therethrough whose dimensions establish a given upward pressure at the aperture due to the melts surface tension, maintaining the level of said melt below that height above the aperture at which the rnelts hydrostatic pressure at the aperture equals the said given upward pressure thereby preventing the melt from flowing out through the aperture, and introducing into the melt via the said aperture an active, conductivity-determining impurity for influencing a condition of the melt.
  • a method of operating on semiconductive materials having high surface tension When molten comprising melting said semiconductive material in a conductive crucible whose wall portions contain plural slots extending completely therethrough whose dimensions establish a given upward pressure at the slots due to the melts surface tension, maintaining the level of said melt below that height above the slots at which the melts hydrostatic pressure at the slots equals the said given upward pressure hereby preventing the melt from flowing out through the slots, and introducing into the melt from outside the walls by way of the slots high-frequency energy to maintain the material in the molten condition and agitate same.
  • a method of operating on semiconductive materials having high surface tension when molten comprising melting said semiconductive material by means of highfrequency energy in an elongated conductive crucible having side and bottom wall portions and an end wall portion with an aperture extending completely therethrough whose dimensions establish a given upward pressure at the aperture due to the melts surface tension, and maintaining the level of said melt below that height above the aperture at which the melts hydrostatic pressure at the aperture equals the said given upward pressure thereby preventing the melt from flowing out through the aperture, said aperture reducing the heat generated by the high-frequency energy in the end wall portion of the crucible.
  • a method of operating on semiconductive materials having high surface tension when molten comprising providing a crucible having an opening in a bottom wall portion and providing a movable member in said crucible and traversing said opening and spaced from the Wall portions surrounding the opening by a given clearance aperture allowing movement thereof, melting semiconductive material in the crucible, said given clearance aperture having dimensions establishing a given upward pressure due to the melts surface tension thereat, maintaining the level of said melt below that height above the said given clearance aperture at which the melts hydrostatic pressure thereat equals the said given upward pressure thereby preventing the melting from flowing out through the clearance aperture, growing a crystal from the melt in the crucible, and moving the member in the crucible while the crystal is growing to maintain a condition of the melt and control the growing crystal.
  • a method of operating on semiconductive materials having high surface tension when molten comprising providing a first outer crucible having an opening in a bottom wall portion, providing a second inner crucible, with an aperture in its wall, within the outer crucible, and providing support means for said inner crucible traversing said opening and spaced from the wall portions surrounding the opening by a given clearance aperture allowing movement of the support means, melting semiconductive material in both crucibles, said given clearance aperture having dimensions establishing a given upward pressure due to the melts surface tension thereat, maintaining the level of said melt below that height above the said given clearance aperture at which the melts hydrostatic pressure thereat equals the said given upward pressure thereby preventing the melt from flowing out through the clearance aperture, said aperture in the inner crucible Wall allowing melt to flow between the crucibles, growing a crystal from the melt in the inner crucible, and moving the support means and inner crucible relative to the outer crucible to maintain the melt level in the inner crucible.
  • a method of operating on semiconductive materials having high surface tension when molten comprising providing a first outer conductive crucible, providing a second inner conductive crucible within the outer crucible, said outer and inner crucibles each having a plurality of vertical slits in wall portions thereof, melting semiconductive material in both crucibles by means of externallyapplied high-freqency energy, said slits in both crucibles having dimensions establishing a given upward pressure due to the melts surface tenson thereat, maintaining the level of said melt in both crucibles below that height above the slits at which the melts hydrostatic pressure thereat equals the said given upward pressure thereby preventing the melt from flowing out through the slits, and growing a crystal from the melt in the inner crucible, said slits allowing high-frequency energy to interact directly with the melt.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Clinical Laboratory Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
US697141A 1956-11-28 1957-11-18 Method for treating materials having a high surface tension in the molten state in a crucible Expired - Lifetime US3067139A (en)

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DE (2) DE1166486B (enrdf_load_stackoverflow)
FR (1) FR1197694A (enrdf_load_stackoverflow)
GB (1) GB820688A (enrdf_load_stackoverflow)
NL (4) NL287659A (enrdf_load_stackoverflow)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3342560A (en) * 1963-10-28 1967-09-19 Siemens Ag Apparatus for pulling semiconductor crystals
US3637439A (en) * 1968-11-13 1972-01-25 Metallurgie Hoboken Process and apparatus for pulling single crystals of germanium
US3747669A (en) * 1971-02-09 1973-07-24 Vyxoka Skola Banska Furnace for the smelting of metals and preparation of materials with high melting points
US3755011A (en) * 1972-06-01 1973-08-28 Rca Corp Method for depositing an epitaxial semiconductive layer from the liquid phase
US4190631A (en) * 1978-09-21 1980-02-26 Western Electric Company, Incorporated Double crucible crystal growing apparatus
US4224100A (en) * 1978-06-16 1980-09-23 Litton Systems, Inc. Method and apparatus for making crystals
US4609425A (en) * 1983-05-06 1986-09-02 U.S. Philips Corporation Cold crucible system and method for the meeting and crystallization of non-metallic inorganic compounds
US20070028835A1 (en) * 2005-05-02 2007-02-08 Norichika Yamauchi Crucible apparatus and method of solidifying a molten material
US20100095883A1 (en) * 2008-10-16 2010-04-22 Korea Institute Of Energy Research Graphite crucible for silicon electromagnetic induction heating and apparatus for silicon melting and refining using the graphite crucible
US20110192837A1 (en) * 2008-10-16 2011-08-11 Korea Institute Of Energy Research Graphite crucible for electromagnetic induction melting silicon and apparatus for silicon melting and refining using the graphite crucible
US20120242016A1 (en) * 2009-12-04 2012-09-27 Bernhard Freudenberg Device for holding silicon melt
US20130067959A1 (en) * 2008-10-16 2013-03-21 Korea Institute Of Energy Research A graphite crucible for silicon electromagnetic induction heating and apparatus for silicon melting and refining using the graphite crucible

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3220343A1 (de) * 1982-05-28 1983-12-01 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen polykristalliner siliciumstaebe
DE3830929A1 (de) * 1988-09-12 1990-03-15 Kernforschungsanlage Juelich Drehdurchfuehrung fuer rezipienten mit heisser wandung

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US65597A (en) * 1867-06-11 Improvement in the constbuction of pots foe chaebing ob burning bones
US2474966A (en) * 1941-05-01 1949-07-05 Hartford Nat Bank & Trust Co Method of preparing selenium
US2576267A (en) * 1948-10-27 1951-11-27 Bell Telephone Labor Inc Preparation of germanium rectifier material
US2773923A (en) * 1953-01-26 1956-12-11 Raytheon Mfg Co Zone-refining apparatus
US2811346A (en) * 1952-01-21 1957-10-29 L Air Liquide Sa Pour L Etudes Device for insufflating gas into a mass of molten metal

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GB701790A (en) * 1949-09-24 1954-01-06 Eastman Kodak Co Improvements in processes for coating with metals by thermal evaporation in vacuo and apparatus therefor

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Publication number Priority date Publication date Assignee Title
US65597A (en) * 1867-06-11 Improvement in the constbuction of pots foe chaebing ob burning bones
US2474966A (en) * 1941-05-01 1949-07-05 Hartford Nat Bank & Trust Co Method of preparing selenium
US2576267A (en) * 1948-10-27 1951-11-27 Bell Telephone Labor Inc Preparation of germanium rectifier material
US2811346A (en) * 1952-01-21 1957-10-29 L Air Liquide Sa Pour L Etudes Device for insufflating gas into a mass of molten metal
US2773923A (en) * 1953-01-26 1956-12-11 Raytheon Mfg Co Zone-refining apparatus

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3342560A (en) * 1963-10-28 1967-09-19 Siemens Ag Apparatus for pulling semiconductor crystals
US3637439A (en) * 1968-11-13 1972-01-25 Metallurgie Hoboken Process and apparatus for pulling single crystals of germanium
US3747669A (en) * 1971-02-09 1973-07-24 Vyxoka Skola Banska Furnace for the smelting of metals and preparation of materials with high melting points
US3755011A (en) * 1972-06-01 1973-08-28 Rca Corp Method for depositing an epitaxial semiconductive layer from the liquid phase
US4224100A (en) * 1978-06-16 1980-09-23 Litton Systems, Inc. Method and apparatus for making crystals
US4190631A (en) * 1978-09-21 1980-02-26 Western Electric Company, Incorporated Double crucible crystal growing apparatus
US4609425A (en) * 1983-05-06 1986-09-02 U.S. Philips Corporation Cold crucible system and method for the meeting and crystallization of non-metallic inorganic compounds
US7799133B2 (en) * 2005-05-02 2010-09-21 Iis Materials Corporation, Ltd. Crucible apparatus and method of solidifying a molten material
US20070028835A1 (en) * 2005-05-02 2007-02-08 Norichika Yamauchi Crucible apparatus and method of solidifying a molten material
US20100095883A1 (en) * 2008-10-16 2010-04-22 Korea Institute Of Energy Research Graphite crucible for silicon electromagnetic induction heating and apparatus for silicon melting and refining using the graphite crucible
US20110192837A1 (en) * 2008-10-16 2011-08-11 Korea Institute Of Energy Research Graphite crucible for electromagnetic induction melting silicon and apparatus for silicon melting and refining using the graphite crucible
US20130067959A1 (en) * 2008-10-16 2013-03-21 Korea Institute Of Energy Research A graphite crucible for silicon electromagnetic induction heating and apparatus for silicon melting and refining using the graphite crucible
EP2334850A4 (en) * 2008-10-16 2014-12-24 Korea Energy Research Inst GRAPHITE CUP FOR SILICON FUSION BY ELECTROMAGNETIC INDUCTION, SILICON FUSION APPARATUS AND REFINING USING THE GRAPHITE CUTTER
US8968470B2 (en) * 2008-10-16 2015-03-03 Korea Institute Of Energy Research Graphite crucible for silicon electromagnetic induction heating and apparatus for silicon melting and refining using the graphite crucible
US9001863B2 (en) * 2008-10-16 2015-04-07 Korea Institute Of Energy Research Graphite crucible for electromagnetic induction melting silicon and apparatus for silicon melting and refining using the graphite crucible
EP2334849A4 (en) * 2008-10-16 2015-06-17 Korea Energy Research Inst GRAFIT MELT TAG FOR ELECTROMAGNETIC SILICON INDUCTION HEATING AND SILICONE MELTING AND REFINEMENT DEVICE USING GRAFIT MELT TAG
US20120242016A1 (en) * 2009-12-04 2012-09-27 Bernhard Freudenberg Device for holding silicon melt

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DE1166486B (de) 1964-03-26
DE1519836B1 (de) 1970-05-14
NL287659A (enrdf_load_stackoverflow)
NL212547A (enrdf_load_stackoverflow)
NL105823C (enrdf_load_stackoverflow)
FR1197694A (fr) 1959-12-02
GB820688A (en) 1959-09-23
NL126067C (enrdf_load_stackoverflow)

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