FR1197694A - Procédé et dispositif pour traiter des matières à tension superficielle élevée, à l'état fondu, dans un creuset - Google Patents

Procédé et dispositif pour traiter des matières à tension superficielle élevée, à l'état fondu, dans un creuset

Info

Publication number
FR1197694A
FR1197694A FR1197694DA FR1197694A FR 1197694 A FR1197694 A FR 1197694A FR 1197694D A FR1197694D A FR 1197694DA FR 1197694 A FR1197694 A FR 1197694A
Authority
FR
France
Prior art keywords
crucible
surface tension
molten state
high surface
treating high
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of FR1197694A publication Critical patent/FR1197694A/fr
Expired legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L3/00—Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
    • B01L3/04—Crucibles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D41/00—Casting melt-holding vessels, e.g. ladles, tundishes, cups or the like
    • B22D41/005—Casting melt-holding vessels, e.g. ladles, tundishes, cups or the like with heating or cooling means
    • B22D41/01—Heating means
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/14—Crucibles or vessels
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/22—Furnaces without an endless core
    • H05B6/30—Arrangements for remelting or zone melting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/074—Horizontal melt solidification

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Clinical Laboratory Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR1197694D 1956-11-28 1957-11-26 Procédé et dispositif pour traiter des matières à tension superficielle élevée, à l'état fondu, dans un creuset Expired FR1197694A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL212547 1956-11-28

Publications (1)

Publication Number Publication Date
FR1197694A true FR1197694A (fr) 1959-12-02

Family

ID=19750815

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1197694D Expired FR1197694A (fr) 1956-11-28 1957-11-26 Procédé et dispositif pour traiter des matières à tension superficielle élevée, à l'état fondu, dans un creuset

Country Status (5)

Country Link
US (1) US3067139A (enrdf_load_stackoverflow)
DE (2) DE1166486B (enrdf_load_stackoverflow)
FR (1) FR1197694A (enrdf_load_stackoverflow)
GB (1) GB820688A (enrdf_load_stackoverflow)
NL (4) NL287659A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0095756A1 (de) * 1982-05-28 1983-12-07 Siemens Aktiengesellschaft Verfahren zum Herstellen polykristalliner Siliciumstäbe
EP0359159A3 (de) * 1988-09-12 1990-08-22 Forschungszentrum Jülich Gmbh Drehdurchführung für Rezipienten mit heisser Wandung

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1251721B (de) * 1963-10-28 1967-10-12 Siemens Aktiengesellschaft, Berlin und München München Verfahren zum Herstellen von Halbleiteiknstallen vorzugsweise Halbleiteremknstallen mit einstellbarer, beispielsweise konstanter Fremdstoffkonzentration
US3637439A (en) * 1968-11-13 1972-01-25 Metallurgie Hoboken Process and apparatus for pulling single crystals of germanium
CS150710B1 (enrdf_load_stackoverflow) * 1971-02-09 1973-09-17
US3755011A (en) * 1972-06-01 1973-08-28 Rca Corp Method for depositing an epitaxial semiconductive layer from the liquid phase
US4224100A (en) * 1978-06-16 1980-09-23 Litton Systems, Inc. Method and apparatus for making crystals
US4190631A (en) * 1978-09-21 1980-02-26 Western Electric Company, Incorporated Double crucible crystal growing apparatus
DE3316547C2 (de) * 1983-05-06 1985-05-30 Philips Patentverwaltung Gmbh, 2000 Hamburg Kalter Tiegel für das Erschmelzen nichtmetallischer anorganischer Verbindungen
JP2006308267A (ja) * 2005-05-02 2006-11-09 Iis Materials:Kk るつぼ装置及びそれを用いた溶融材料の凝固方法
KR101063250B1 (ko) * 2008-10-16 2011-09-07 한국에너지기술연구원 실리콘 전자기 유도 용융용 흑연 도가니 및 이를 이용한 실리콘 용융 정련 장치
KR100995927B1 (ko) * 2008-10-16 2010-11-22 한국에너지기술연구원 실리콘 전자기 유도 용융용 흑연 도가니 및 이를 이용한 실리콘 용융 정련 장치
US20130067959A1 (en) * 2008-10-16 2013-03-21 Korea Institute Of Energy Research A graphite crucible for silicon electromagnetic induction heating and apparatus for silicon melting and refining using the graphite crucible
CN102713024A (zh) * 2009-12-04 2012-10-03 太阳世界创新有限公司 用于保持硅熔体的装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US65597A (en) * 1867-06-11 Improvement in the constbuction of pots foe chaebing ob burning bones
NL57010C (enrdf_load_stackoverflow) * 1941-05-01
US2576267A (en) * 1948-10-27 1951-11-27 Bell Telephone Labor Inc Preparation of germanium rectifier material
GB701790A (en) * 1949-09-24 1954-01-06 Eastman Kodak Co Improvements in processes for coating with metals by thermal evaporation in vacuo and apparatus therefor
NL74999C (enrdf_load_stackoverflow) * 1952-01-21
US2773923A (en) * 1953-01-26 1956-12-11 Raytheon Mfg Co Zone-refining apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0095756A1 (de) * 1982-05-28 1983-12-07 Siemens Aktiengesellschaft Verfahren zum Herstellen polykristalliner Siliciumstäbe
EP0359159A3 (de) * 1988-09-12 1990-08-22 Forschungszentrum Jülich Gmbh Drehdurchführung für Rezipienten mit heisser Wandung

Also Published As

Publication number Publication date
DE1166486B (de) 1964-03-26
DE1519836B1 (de) 1970-05-14
NL287659A (enrdf_load_stackoverflow)
NL212547A (enrdf_load_stackoverflow)
US3067139A (en) 1962-12-04
NL105823C (enrdf_load_stackoverflow)
GB820688A (en) 1959-09-23
NL126067C (enrdf_load_stackoverflow)

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