US3030560A - Transistors - Google Patents

Transistors Download PDF

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Publication number
US3030560A
US3030560A US26159A US2615960A US3030560A US 3030560 A US3030560 A US 3030560A US 26159 A US26159 A US 26159A US 2615960 A US2615960 A US 2615960A US 3030560 A US3030560 A US 3030560A
Authority
US
United States
Prior art keywords
transistor
cap
sealed
eyelet
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US26159A
Other languages
English (en)
Inventor
Shearman Paul Martin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Associated Electrical Industries Ltd
Original Assignee
Associated Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Associated Electrical Industries Ltd filed Critical Associated Electrical Industries Ltd
Application granted granted Critical
Publication of US3030560A publication Critical patent/US3030560A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/041—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction having no base used as a mounting for the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4918—Disposition being disposed on at least two different sides of the body, e.g. dual array

Definitions

  • This invention relates to transistors of the kind in which a metal cap is sealed to a metal eyelet for example by welding, and encloses a transistor wafer and its associated supporting conductors, the supporting conductors passing through the eyelet to the exterior of the enclosure in spaced relation to each other and to the inner periphery of the eyelet, said spaced relations being fixed by sealing with a glass bead.
  • a transistor is hereinafter referred to as an encapsulated transistor.
  • the cap of a transistor of the kind hereinbefore set forth is provided internally with a refractory electrically insulating insert which prevents the transistor wafer and/or supporting conductors from coming into contact with the inner wall of the cap.
  • the insert is conveniently made from anodised aluminlum.
  • the insert may consist of a sleeve, the internal diameter of which is suicient to accommodate the transistor wafer and its supporting conductors.
  • the insert may consist of a solid cylinder having two transverse slots substantially at right angles to each other cut into one end, the dimensions of the slots being sufiicient to accommodate the transistor wafer and the supporting conductors respectively.
  • the insert may be shaped from aluminium blank and then subjected to any known anodising process as a result of which the aluminium is converted to a considerable depth to the oxide which is an electrical insulator.
  • the corners of the insert are rounded off before processing since the anodising will not always take place along sharp edges thus leaving the bare metal exposed.
  • the cap into which the insert is fitted is thoroughly washed to remove as far as possible all traces of foreign matter likely to have a harmful effect on the operation of the transistor.
  • the space between the cap and the insert and between the insert and the transistor wafer and supporting conductors may be filled with silicone grease which may be loaded with powdered silicon, alumina or magnesia, calcium aluminium silicate, or sodium aluminium silicate, or with any other suitable material.
  • FIG. 1 is a sectional view of a transistor constructed according to one embodiment of the invention.
  • FIG. 2 is an elevation of an anodised aluminium insert having transverse slots cut in the base and a domed top which illustrattes a second embodiment of the invention
  • FIG. 3 is an inverted plan of the insert shown in FIG. 2, showing more clearly the transverse slots in the base, and
  • FIG. 4 is a sectional view of a transistor having a modilied outer casing, but illustrating the same embodiment of the invention as shown in FIG. 1.
  • a transistor 1 comprising a transistor wafer 2 supported by and in electrical contact with supporting conductors 3 which pass through a glass bead 4 in spaced relation to each other and to an eyelet 5 which is anged at 8.
  • the sleeve may be replaced by the insert shown in FIGS. 2 and 3.
  • FIG. 4 a modified arrangement of the cap and eyelet forming the enclosure containing the transistor -wafer is shown.
  • 'I'he cap 7 is now in the form of a hollow cylinder, closed at one end and with its open end fitting over and sealed to the outer wall of the annular eyelet 5.
  • the eyelet may be made of any metal which is known to seal to glass, such as the alloy known under the registered trademark Nilo K .and the cap of any metal which may be secured to the eyelet by such means as welding or soldering.
  • the cap may be made of 18% nickel silver since these two metals may be joined together readily by welding.
  • the thermal resistance of a transistor is a measure of the rate at which energy dissipated at the collector junction as heat is removed from the junction and thence from the transistor. Thermal resistance is often measured in terms of degrees centigrade per milliwatt of output power for a given ambient temperature. Thus, if for an ambient temperature of 25 C. the' thermal resistance is 0.1 C./mw., the temperature of the transistor will rise by 0.1 C. for each milliwatt of output from the transistor.
  • the effect of introducing the anodised aluminium insert has been to halve the thermal resistance of at least one type of transistor, i.e., reducing it from t C./mw. to 1/2 t C./mw.
  • reducing it from t C./mw. to 1/2 t C./mw For every transistor there is a maximum operating temperature at which the transistor may be operated without its characteristics changing. It follows that for given maximum operating and ambient temperatures the lower the thermal resistance the higher the permissible wattage rating of the transistor.
  • a sealed transistor comprising a metal cap, a metal eyelet sealed to said cap to form an enclosure, said eyelet having sealed therein vitreous material, a transistor wafer and associated supporting conductors, said wafer being supported within said enclosure and spaced apart from the inner wall of said cap by said supporting conductors which pass through and are sealed to said vitreous material in spaced relation to each other, and a refractory electrically insulating insert of anodised aluminium Within said cap preventing said transistor wafer and said supporting conductors from coming into contact with said inner wall of said cap.
  • a sealed transistor comprising a metal cap, a iianged metal eyelet sealed to said cap to form an enclosure, said eyelet having a glass bead sealed therein, a transistor wafer and associated supporting conductors, said wafer being supported within said enclosure and spaced apart from the inner wall of said cap by said supporting conductors which pass through and are sealed to said glass bead in spaced relation to each other, and a refractory electrically insulating sleeve of anodised aluminium within said cap, the internal diameter of said sleeve being sufficient to accommodate said transistor wafer and said .3 supportingioonductors preventingsaid wafenandsaidnsupporting conductors from coming into Contact with said inner wall of said cap.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Die Bonding (AREA)
US26159A 1959-05-05 1960-05-02 Transistors Expired - Lifetime US3030560A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB15433/59A GB881646A (en) 1959-05-05 1959-05-05 Improvements in and relating to transistors

Publications (1)

Publication Number Publication Date
US3030560A true US3030560A (en) 1962-04-17

Family

ID=10059047

Family Applications (1)

Application Number Title Priority Date Filing Date
US26159A Expired - Lifetime US3030560A (en) 1959-05-05 1960-05-02 Transistors

Country Status (4)

Country Link
US (1) US3030560A (en, 2012)
DE (1) DE1208006B (en, 2012)
GB (1) GB881646A (en, 2012)
NL (1) NL251229A (en, 2012)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3462654A (en) * 1966-10-05 1969-08-19 Int Rectifier Corp Electrically insulating-heat conductive mass for semiconductor wafers
US5252856A (en) * 1990-09-26 1993-10-12 Nec Corporation Optical semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL287206A (en, 2012) * 1961-12-28 1900-01-01

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2788474A (en) * 1953-09-10 1957-04-09 Westinghouse Electric Corp Rectifier assembly
US2822512A (en) * 1955-05-17 1958-02-04 Westinghouse Brake & Signal Rectifier assemblies
US2900584A (en) * 1954-06-16 1959-08-18 Motorola Inc Transistor method and product

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE539483A (en, 2012) *
DE968515C (de) * 1950-09-22 1958-02-27 Siemens Ag Trockengleichrichter
NL183243C (nl) * 1953-11-30 Metallgesellschaft Ag Werkwijze voor het op metaaloppervlakken aanbrengen van fosfaatbekledingen.
DE1048358B (en, 2012) * 1955-08-12 1959-01-08

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2788474A (en) * 1953-09-10 1957-04-09 Westinghouse Electric Corp Rectifier assembly
US2900584A (en) * 1954-06-16 1959-08-18 Motorola Inc Transistor method and product
US2822512A (en) * 1955-05-17 1958-02-04 Westinghouse Brake & Signal Rectifier assemblies

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3462654A (en) * 1966-10-05 1969-08-19 Int Rectifier Corp Electrically insulating-heat conductive mass for semiconductor wafers
US5252856A (en) * 1990-09-26 1993-10-12 Nec Corporation Optical semiconductor device

Also Published As

Publication number Publication date
NL251229A (en, 2012)
GB881646A (en) 1961-11-08
DE1208006B (de) 1965-12-30

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