US2865794A - Semi-conductor device with telluride containing ohmic contact and method of forming the same - Google Patents
Semi-conductor device with telluride containing ohmic contact and method of forming the same Download PDFInfo
- Publication number
- US2865794A US2865794A US550502A US55050255A US2865794A US 2865794 A US2865794 A US 2865794A US 550502 A US550502 A US 550502A US 55050255 A US55050255 A US 55050255A US 2865794 A US2865794 A US 2865794A
- Authority
- US
- United States
- Prior art keywords
- tellurium
- semi
- ohmic contact
- body portion
- telluride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 title claims description 8
- 239000004065 semiconductor Substances 0.000 title description 6
- 238000000034 method Methods 0.000 title description 5
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 29
- 229910052714 tellurium Inorganic materials 0.000 claims description 28
- 239000012298 atmosphere Substances 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 229910052793 cadmium Inorganic materials 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 239000011701 zinc Substances 0.000 claims description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 5
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 13
- 150000001875 compounds Chemical class 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 229910052753 mercury Inorganic materials 0.000 description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000008188 pellet Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- -1 TELLURIDE COMPOUND Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 150000004772 tellurides Chemical class 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
- H01L21/441—Deposition of conductive or insulating materials for electrodes
- H01L21/445—Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/40—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S228/00—Metal fusion bonding
- Y10S228/903—Metal to nonmetal
Definitions
- the invention relates to semi-conductor devices, and especially to the establishment of an ohmic contact to a semi-conductive body of a p-type-conductivity telluride of a bivalent metal.
- the compounds concerned are the tellurides of Zn, Cd, Hg, Sn and Pb. These compounds may, as is known, exhibit p-type conductivity since, as compared with the correct stoichiometric composition, the anion is contained therein in an excessive quantity, combined or not combined with monovalent cations, for example those of Cu, Ag, Au and the alkaline metals.
- the incorporation of the tellurium may be due to diffusion or to the fact that a quantity of the semi-conductive compound is dissolved in the melt and recrystallized out subsequent to cooling on an undissolved portion of the body as a layer contaminated or doped by excess tellurium.
- a non-oxidizing atmosphere suitable for the melting operation may for example be nitrogen or a mixture of nitrogen with a few percent of hydrogen.
- the fusing time has no effect on the ohmic property of the connection; the tellurium only moves deeper into the semi-conductive body, as the time of treatment is made longer.
- the tellurium may be applied to the semi-conductive body in various ways, for example by evaporation, by applying a powder, if desired in the form of a paste, or by applying a piece or pellet of tellurium directly.
- Fig. 1 is a cross-sectional view of the semiconductive body with the tellurium fused thereto
- Fig. 2 is a flow diagram illustrating the method of the invention.
- Fig. 1 shows the telluride compound p-type semi-conductive body 10, on the upper surface of which is fused a pellet 11 of tellurium metal.
- the dotted line area 12 underlying the tellurium metal mass 11 represents the area in which has been in- 2,865,794 Patented Dec. 23, 1958 corporated a large excess of tellurium atoms.
- This area 12 forms a good ohmic contact to the underlying p-type area 10, and the metal mass 11 forms a good contact with the underlying area 12, thereby establishing the desired connection to the semi-conductive body.
- Fig. 2 is a flow diagram of the method of the invention, and comprises, as shown, application of the tellurium mass to the semi-conductive body, followed by heating in a non-oxidizing atmosphere to cause the two to fuse together.
- the tellurium contact according to the invention may for example be provided on a plate or wafer of p-type conductive CdTe by melting down or fusing thereto a pellet of tellurium at 500 C. in a nitrogen atmosphere with 10% of hydrogen for two minutes.
- the other tellurides referred to above may also be provided with a satisfactory ohmic contact in this manner.
- the tellurium contact according to the invention may be coated, for example by evaporation, with a metal layer, for example gold.
- Current supply wires if desired, can be welded directly to the tellurium or be secured thereto by means of soft solder, for example a lead-tin solder.
- a semi-conductor device comprising a body having a p-type semi-conductive portion consisting essentially of a telluride of a bivalent metal selected from the group con sisting of zinc, cadmium, mercury, tin and lead, and a mass of tellurium fused to said body portion to establish an ohmic contact thereto.
- a semi-conductor device comprising a semi-conductive body containing a p-type-conductivity region consisting essentially of a compound of tellurium and a metal selected from the group consisting of Zinc, cadmium, mercury, tin and lead, and an excess-telluriumdoped layer portion in said region and constituting an electrical connection thereto.
- a method of making an ohmic contact to a p-type semi-conductive body portion consisting essentially of a telluride of a metal selected from the group consisting of zinc, cadmium, mercury, tin and lead which comprises contacting said body portion with tellurium metal, and fusing said tellurium to said body portion in a predominantly nitrogen gas atmosphere to incorporate some tellurium in the body portion and thereby establish the ohmic contact.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Manufacture And Refinement Of Metals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL339990X | 1954-12-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
US2865794A true US2865794A (en) | 1958-12-23 |
Family
ID=19784660
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US550502A Expired - Lifetime US2865794A (en) | 1954-12-01 | 1955-12-01 | Semi-conductor device with telluride containing ohmic contact and method of forming the same |
Country Status (7)
Country | Link |
---|---|
US (1) | US2865794A (it) |
BE (1) | BE543253A (it) |
CH (1) | CH339990A (it) |
DE (1) | DE1009311B (it) |
FR (1) | FR1136613A (it) |
GB (1) | GB789338A (it) |
NL (2) | NL88273C (it) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2937113A (en) * | 1956-05-15 | 1960-05-17 | Siemens Ag | Method of producing an electrodecarrying silicon semiconductor device |
US3038241A (en) * | 1958-12-22 | 1962-06-12 | Sylvania Electric Prod | Semiconductor device |
US3080261A (en) * | 1959-07-13 | 1963-03-05 | Minnesota Mining & Mfg | Bonding of lead based alloys to silicate based ceramic members |
DE1149460B (de) * | 1959-10-19 | 1963-05-30 | Rca Corp | Elektrische Halbleiteranordnung mit einem eigenleitenden Kristall aus Cadmiumsulfid,Cadmiumselenid, Zinksulfid, Zinkselenid oder Zinkoxyd |
US3188594A (en) * | 1962-01-25 | 1965-06-08 | Gen Electric | Thermally sensitive resistances |
US3232719A (en) * | 1962-01-17 | 1966-02-01 | Transitron Electronic Corp | Thermoelectric bonding material |
US3271591A (en) * | 1963-09-20 | 1966-09-06 | Energy Conversion Devices Inc | Symmetrical current controlling device |
US3327137A (en) * | 1964-04-10 | 1967-06-20 | Energy Conversion Devices Inc | Square wave generator employing symmetrical, junctionless threshold-semiconductor and capacitor in series circuit devoid of current limiting impedances |
US3366518A (en) * | 1964-07-01 | 1968-01-30 | Ibm | High sensitivity diodes |
US4461785A (en) * | 1982-11-19 | 1984-07-24 | E. I. Du Pont De Nemours And Company | Process for electrical terminal contact metallization |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1751361A (en) * | 1926-06-01 | 1930-03-18 | Ruben Rectifier Corp | Electric-current rectifier |
US2603693A (en) * | 1950-10-10 | 1952-07-15 | Bell Telephone Labor Inc | Semiconductor signal translating device |
US2608611A (en) * | 1949-08-17 | 1952-08-26 | Bell Telephone Labor Inc | Selenium rectifier including tellurium and method of making it |
US2790736A (en) * | 1955-01-31 | 1957-04-30 | Rohm & Haas | Methods of making coated paper products and the products obtained |
-
0
- BE BE543253D patent/BE543253A/xx unknown
- NL NL192839D patent/NL192839A/xx unknown
- NL NL88273D patent/NL88273C/xx active
-
1955
- 1955-11-28 DE DEN11498A patent/DE1009311B/de active Pending
- 1955-11-28 GB GB34019/55A patent/GB789338A/en not_active Expired
- 1955-11-29 CH CH339990D patent/CH339990A/de unknown
- 1955-11-29 FR FR1136613D patent/FR1136613A/fr not_active Expired
- 1955-12-01 US US550502A patent/US2865794A/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1751361A (en) * | 1926-06-01 | 1930-03-18 | Ruben Rectifier Corp | Electric-current rectifier |
US2608611A (en) * | 1949-08-17 | 1952-08-26 | Bell Telephone Labor Inc | Selenium rectifier including tellurium and method of making it |
US2603693A (en) * | 1950-10-10 | 1952-07-15 | Bell Telephone Labor Inc | Semiconductor signal translating device |
US2790736A (en) * | 1955-01-31 | 1957-04-30 | Rohm & Haas | Methods of making coated paper products and the products obtained |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2937113A (en) * | 1956-05-15 | 1960-05-17 | Siemens Ag | Method of producing an electrodecarrying silicon semiconductor device |
US3038241A (en) * | 1958-12-22 | 1962-06-12 | Sylvania Electric Prod | Semiconductor device |
US3080261A (en) * | 1959-07-13 | 1963-03-05 | Minnesota Mining & Mfg | Bonding of lead based alloys to silicate based ceramic members |
DE1149460B (de) * | 1959-10-19 | 1963-05-30 | Rca Corp | Elektrische Halbleiteranordnung mit einem eigenleitenden Kristall aus Cadmiumsulfid,Cadmiumselenid, Zinksulfid, Zinkselenid oder Zinkoxyd |
US3232719A (en) * | 1962-01-17 | 1966-02-01 | Transitron Electronic Corp | Thermoelectric bonding material |
US3188594A (en) * | 1962-01-25 | 1965-06-08 | Gen Electric | Thermally sensitive resistances |
US3271591A (en) * | 1963-09-20 | 1966-09-06 | Energy Conversion Devices Inc | Symmetrical current controlling device |
US3327137A (en) * | 1964-04-10 | 1967-06-20 | Energy Conversion Devices Inc | Square wave generator employing symmetrical, junctionless threshold-semiconductor and capacitor in series circuit devoid of current limiting impedances |
US3366518A (en) * | 1964-07-01 | 1968-01-30 | Ibm | High sensitivity diodes |
US4461785A (en) * | 1982-11-19 | 1984-07-24 | E. I. Du Pont De Nemours And Company | Process for electrical terminal contact metallization |
Also Published As
Publication number | Publication date |
---|---|
GB789338A (en) | 1958-01-22 |
BE543253A (it) | |
CH339990A (de) | 1959-07-31 |
NL88273C (it) | |
DE1009311B (de) | 1957-05-29 |
NL192839A (it) | |
FR1136613A (fr) | 1957-05-16 |
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