US2496346A - Semiconductive resistance provided with metal contacts - Google Patents

Semiconductive resistance provided with metal contacts Download PDF

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Publication number
US2496346A
US2496346A US727090A US72709047A US2496346A US 2496346 A US2496346 A US 2496346A US 727090 A US727090 A US 727090A US 72709047 A US72709047 A US 72709047A US 2496346 A US2496346 A US 2496346A
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Prior art keywords
metal
semi
conductive material
contact members
layer
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US727090A
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Haayman Pieter Willem
Bruining Hajo
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Hartford National Bank and Trust Co
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Hartford National Bank and Trust Co
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    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/105Varistor cores
    • H01C7/108Metal oxide
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/658Atmosphere during thermal treatment
    • C04B2235/6582Hydrogen containing atmosphere
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12Metallic interlayers
    • C04B2237/124Metallic interlayers based on copper
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12Metallic interlayers
    • C04B2237/126Metallic interlayers wherein the active component for bonding is not the largest fraction of the interlayer
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12Metallic interlayers
    • C04B2237/126Metallic interlayers wherein the active component for bonding is not the largest fraction of the interlayer
    • C04B2237/127The active component for bonding being a refractory metal
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32Ceramic
    • C04B2237/34Oxidic
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40Metallic
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/78Side-way connecting, e.g. connecting two plates through their sides
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/84Joining of a first substrate with a second substrate at least partially inside the first substrate, where the bonding area is at the inside of the first substrate, e.g. one tube inside another tube
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S228/00Metal fusion bonding
    • Y10S228/903Metal to nonmetal
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49082Resistor making
    • Y10T29/49087Resistor making with envelope or housing
    • Y10T29/49098Applying terminal

Description

Feb. 7, 1950 P. w. HAAYMAN ErAL 2,496,346
SEMICONDUCTIVE RESISTANCE PROVIDED wrrn METAL CONTACTS Filed Feb. 7, 1947 l/Vff/fMED/ATE M127? OFML'ML 0/ SBW-CQA/M/LTOR/MIA 60/ 1 1* 00/0746? 5EM/ CONDUCTOR INVENTORS P/Efffi W/LLEM HAA YMAN M410 BRU/N/NG @atented Feb. if, 1950 SEMICONDUCTIVE RESISTANCE PROVIDED WITH METAL CONTACTS V Pieter Willem Hazyman and Halo Brulnlng, Elndhoven, Netherlands, asslgnors to Hartford National Bank and Trust Company, Hartlord,
Conn, as trustee Application February 7,1947, Serial No. 121,090 In the Netherlands July 30, 1945 Section 1, Public Law 690, August 8, 1946 Patent expires July 30, 1965 4 Claims. l
Upon mounting current supply contacts on resistances made of semi-conductive material for example of either reduced or non-reduced oxides, a so-called blocking layer is frequentb' formed, which becomes manifest by dependance of the resistance on the voltage and dependance of the resistance value on the direction of current. A further disadvantage may be that the union is mechanically insuflicient. Readily adhering contacts can be mounted on a semi-conductive resistance without the formation of a blocking layer by applying by vaporization the metal which is contained in the semi-conductor as the cation, for example zinc with resistances made of zinc oxide, but it is difiicult or sometimes impossible to secure further connections to such a contact layer by welding or soldering.
According to the invention it is possible to mount metal contacts on resistances made of sintered, semi-conductive material, the conductlvity of which is due to a divergence in stoicheiometry owing to the presence of an excess of metal, without the aforesaid disadvantages occurring, by the use of an intermediate layer constituted by a metal mass which contains both the metal in which the semi-conductor is built up and the metal of which is made the contact body to be mounted or with which the latter is coated. The union is then brought about by a heating operation, in which the intermediate layer melts or sinters.
Ii desired, other metals may be added for the purpose of reducing the slntering or meltingtemperature respectively and of improving the flowing capacity.
The metal may be used as a mixture or as an alloy, for example in the pulverulent condition and is applied, preferably with the use of a plastic binder, as a paste to the ends of the resistance. The contact body to be mounted is then slipped on it, after which the metal-containing intermediate layer is caused to sinter or to melt respectively.
A resistance constituted by a sintered magnesia mass in which particles of partly reduced titanium oxide of the composition of TiOx (at between 1.6 and 1.7) are embedded to the extent of about 8%, may have mounted on it copper or copperclad iron current supply contacts with the aid.
of a mixture of Cu, '1! and Sn in a molecular ratio of :10:22. For this purpose about 10 grams of this mixture is worked with a solution of 2 grams of cresol-formaldehyde resin in 10 cm. 01' alcohol, into a paste. After a thin layer of it has been applied to the ends of the resistance and copper contact tags have been slipped on it the assembly is dried and then sintered at about 1000 C. in pure hydrogen.
For mountingcontacts constituted by a tinned iron tag to resistances substantially made of CdO, use may be made, for example, of an alloy of Cd and Sn in a molecular ratio of 4: 1.
In this case the union may be brought about by melting at about 250 C. in nitrogen.
What we claim is:
1. An electrical resistance comprising a body of sintered magnesia containing about 3% of" particles of reduced titanium oxide having the formula TiOg wherein x is between 1.6 and 1.7, copper contact members secured to said body of semi-conductive material, and an intermediate layer between said metal contact members and said body of semi-conductive material for securing the metal contacts to said body of semiconductive material, said intermediate metal layer consisting essentially of copper, titanium,
and tin in a molecular ratio of approximately 55: 10:2 respectively.
2. A method of manufacturing an electrical resistance comprising the steps of applying a layer of metal to selected portions of a body oi semi-conductive material which departs from stoichiometry and contains a metal to increase the conductivity thereof, said layer of metal containing as a constituent thereof the metal contained in said semi-conductive material, applying metal contact members over said metal coated portions of said semi-conductive body, said metal contact members being made of a metal which is contained in said metal layer. and heating said body in an inert atmosphere to fuse the intermediate metal layer into the metal contact members and said body of semiconductive material to firmly secure the metal contact members to said body of semi-conductive material. I
3. A method of manufacturing an electrical resistance comprising the steps of applying a layer of metal to selected portions of a body of semi-conductive material which departs :Zrom
auaue stoichiometry and contains a. metal to increase the conductivity thereof, said layer 0! metal containing as constituents thereof the metal contained in said semi-conductive material and a metal to reduce the melting temperature thereof, applying metal contact members over said metal coated portions of said body oi semi-conductive material, said metal contact members being made of a metal which is contained in the intermediate metal layer, and heating the body in an inert at mosphere at a reduced temperature to fuse the intermediate metal layer into the metal contact members and said body of semi-conductive ma terial to firmly secure the metal contact mem bers to said body of semi-conductive material.
4. A method of manufacturing an electrical resistance comprising the steps of applying a paste containing metal in a pulverulent state to selected portions of a body of semi-conductive material which departs from stoichiornetry and t;
contains a metal to increase the conductivity thereof, said paste containingas a constituent thereof the metal contained in said semi-con ductive material, applying metal contact members over said paste covered portions of said 25 body of semi-conductive material, said metal contact members being made or a metal which is contained in the metal of said paste, and heating the body in an inert atmosphere to fuse the metal contained in said paste into the metal contact members and said body of semi-conductive material to firmly secure the metal contact members to said body of semi-conductive material.
PIETER WILLEM HAAYMAN. HAJO BRUINING.
REFERENCES CITED The following references are of record in the idle of this patent:
UNITED STATES PATENTS Number Name Date l,'t85,6l8 Day Dec. 16, 1930 FOREIGN PATENTS Number Country Date tdddw Great Britain June 8, 1938 654L630 Great Britain July 12, 1943 20,274 Switzerland Sept. 11, 1899

Claims (1)

1. AN ELECTRICAL RESISTANCE COMPRISING A BODY OF SINTERED MAGNESIA CONTAINING ABOUT 3% OF PARTICLES OF REDUCED TITANIUM OXIDE HAVING THE FORMULA TIOX WHEREIN X IS BETWEEN 1.6 AND 1.7, COPPER CONTACT MEMBERS SECURED TO SAID BODY OF SEMI-CONDUCTIVE MATERIAL, AND AN INTERMEDIATE LAYER BETWEEN SAID METAL CONTACT MEMBERS AND SAID BODY OF SEMI-CONDUCTIVE MATERIAL FOR SECURING THE METAL CONTACTS TO SAID BODY OF SEMICONDUCTIVE MATERIAL, SAID INTERMEDIATE METAL LAYER CONSISTING ESSENTIALLY OF COPPER, TITANIUM, AND TIN IN A MOLECULAR RATIO OF APPROXIMATELY 55:10:2 RESPECTIVELY.
US727090A 1945-07-30 1947-02-07 Semiconductive resistance provided with metal contacts Expired - Lifetime US2496346A (en)

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Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2599751A (en) * 1948-04-26 1952-06-10 Federspiel Hermann Welding process for joining a metal body and a semiconducting body composed of metallic and ceramic material
US2633521A (en) * 1949-06-28 1953-03-31 Bell Telephone Labor Inc High-temperature coefficient resistor and method of making it
US2640813A (en) * 1948-06-26 1953-06-02 Aladdin Ind Inc Reaction product of a mixed ferrite and lead titanate
US2720573A (en) * 1951-06-27 1955-10-11 Dick O R Lundqvist Thermistor disks
US2838390A (en) * 1954-06-01 1958-06-10 Sylvania Electric Prod Method of making metal-to-ceramic seals
US2848587A (en) * 1953-11-17 1958-08-19 Mc Graw Edison Co Fire detector cable
US2857663A (en) * 1954-02-09 1958-10-28 Gen Electric Metallic bond
US2883305A (en) * 1950-09-27 1959-04-21 Auwarter Max Photoelectric semiconductors and method of producing same
US2883502A (en) * 1955-01-28 1959-04-21 Us Gasket Company Electrical resistors and other bodies with negligible temperature coefficient of expansion
US2885522A (en) * 1957-07-01 1959-05-05 Sprague Electric Co Electrical component and casting arrangement
US2903666A (en) * 1955-08-23 1959-09-08 Speer Carbon Company Resistors with integral molded metal terminals
US2914428A (en) * 1953-11-09 1959-11-24 Ruckelshaus Formation of hard metallic films
US2936434A (en) * 1956-10-05 1960-05-10 Mc Graw Edison Co Fire detector cable
US2967282A (en) * 1957-09-30 1961-01-03 Gen Electric High temperature resistor
US3086187A (en) * 1960-05-20 1963-04-16 American Radiator & Standard Electrical heating element
US3100339A (en) * 1956-08-30 1963-08-13 Gen Electric Method of making composite bodies
US3216088A (en) * 1961-01-09 1965-11-09 Ass Elect Ind Bonding of metal plates to semi-conductor materials
US3432365A (en) * 1963-02-07 1969-03-11 North American Rockwell Composite thermoelectric assembly having preformed intermediate layers of graded composition
US3444006A (en) * 1963-12-16 1969-05-13 Westinghouse Electric Corp Thermoelectric element having a diffusion bonded coating
US3494803A (en) * 1966-05-12 1970-02-10 Teledyne Inc Method of bonding a semi-conductor to a metal conductor and resultant product
US3547706A (en) * 1967-04-21 1970-12-15 Teledyne Inc Junction assembly for thermocouples
US3865632A (en) * 1973-04-23 1975-02-11 Atomic Energy Commission Terminal for thermoelectric element
US3973997A (en) * 1974-06-24 1976-08-10 Jade Controls, Inc. Thermocouple with improved hot junction
US4470034A (en) * 1982-02-26 1984-09-04 Kennecott Corporation Electrical resistor structure
US4968377A (en) * 1988-04-09 1990-11-06 Georg Sillner Method and apparatus for shaping cylindrical electrical parts

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH20274A (en) * 1899-09-11 1900-12-31 Aeg Electrical resistance
US1785618A (en) * 1920-04-09 1930-12-16 Gen Railway Signal Co Copper-carbon contact
GB486639A (en) * 1937-09-10 1938-06-08 Rosenthal Isolatoren Gmbh An improved method of making high ohmic resistances with low temperature coefficient
GB554630A (en) * 1942-01-09 1943-07-13 Mullard Radio Valve Co Ltd Improvements in or relating to high frequency resistances

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH20274A (en) * 1899-09-11 1900-12-31 Aeg Electrical resistance
US1785618A (en) * 1920-04-09 1930-12-16 Gen Railway Signal Co Copper-carbon contact
GB486639A (en) * 1937-09-10 1938-06-08 Rosenthal Isolatoren Gmbh An improved method of making high ohmic resistances with low temperature coefficient
GB554630A (en) * 1942-01-09 1943-07-13 Mullard Radio Valve Co Ltd Improvements in or relating to high frequency resistances

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2599751A (en) * 1948-04-26 1952-06-10 Federspiel Hermann Welding process for joining a metal body and a semiconducting body composed of metallic and ceramic material
US2640813A (en) * 1948-06-26 1953-06-02 Aladdin Ind Inc Reaction product of a mixed ferrite and lead titanate
US2633521A (en) * 1949-06-28 1953-03-31 Bell Telephone Labor Inc High-temperature coefficient resistor and method of making it
US2883305A (en) * 1950-09-27 1959-04-21 Auwarter Max Photoelectric semiconductors and method of producing same
US2720573A (en) * 1951-06-27 1955-10-11 Dick O R Lundqvist Thermistor disks
US2914428A (en) * 1953-11-09 1959-11-24 Ruckelshaus Formation of hard metallic films
US2848587A (en) * 1953-11-17 1958-08-19 Mc Graw Edison Co Fire detector cable
US2857663A (en) * 1954-02-09 1958-10-28 Gen Electric Metallic bond
US2838390A (en) * 1954-06-01 1958-06-10 Sylvania Electric Prod Method of making metal-to-ceramic seals
US2883502A (en) * 1955-01-28 1959-04-21 Us Gasket Company Electrical resistors and other bodies with negligible temperature coefficient of expansion
US2903666A (en) * 1955-08-23 1959-09-08 Speer Carbon Company Resistors with integral molded metal terminals
US3100339A (en) * 1956-08-30 1963-08-13 Gen Electric Method of making composite bodies
US2936434A (en) * 1956-10-05 1960-05-10 Mc Graw Edison Co Fire detector cable
US2885522A (en) * 1957-07-01 1959-05-05 Sprague Electric Co Electrical component and casting arrangement
US2967282A (en) * 1957-09-30 1961-01-03 Gen Electric High temperature resistor
US3086187A (en) * 1960-05-20 1963-04-16 American Radiator & Standard Electrical heating element
US3216088A (en) * 1961-01-09 1965-11-09 Ass Elect Ind Bonding of metal plates to semi-conductor materials
US3432365A (en) * 1963-02-07 1969-03-11 North American Rockwell Composite thermoelectric assembly having preformed intermediate layers of graded composition
US3444006A (en) * 1963-12-16 1969-05-13 Westinghouse Electric Corp Thermoelectric element having a diffusion bonded coating
US3494803A (en) * 1966-05-12 1970-02-10 Teledyne Inc Method of bonding a semi-conductor to a metal conductor and resultant product
US3547706A (en) * 1967-04-21 1970-12-15 Teledyne Inc Junction assembly for thermocouples
US3865632A (en) * 1973-04-23 1975-02-11 Atomic Energy Commission Terminal for thermoelectric element
US3973997A (en) * 1974-06-24 1976-08-10 Jade Controls, Inc. Thermocouple with improved hot junction
US4470034A (en) * 1982-02-26 1984-09-04 Kennecott Corporation Electrical resistor structure
US4968377A (en) * 1988-04-09 1990-11-06 Georg Sillner Method and apparatus for shaping cylindrical electrical parts

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