US2496346A - Semiconductive resistance provided with metal contacts - Google Patents
Semiconductive resistance provided with metal contacts Download PDFInfo
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- US2496346A US2496346A US727090A US72709047A US2496346A US 2496346 A US2496346 A US 2496346A US 727090 A US727090 A US 727090A US 72709047 A US72709047 A US 72709047A US 2496346 A US2496346 A US 2496346A
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- United States
- Prior art keywords
- metal
- semi
- conductive material
- contact members
- layer
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- Expired - Lifetime
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- 229910052751 metal Inorganic materials 0.000 title claims description 52
- 239000002184 metal Substances 0.000 title claims description 52
- 239000004020 conductor Substances 0.000 claims description 19
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000395 magnesium oxide Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000000470 constituent Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910003087 TiOx Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- VOOLKNUJNPZAHE-UHFFFAOYSA-N formaldehyde;2-methylphenol Chemical compound O=C.CC1=CC=CC=C1O VOOLKNUJNPZAHE-UHFFFAOYSA-N 0.000 description 1
- 125000001475 halogen functional group Chemical group 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
- C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/105—Varistor cores
- H01C7/108—Metal oxide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/658—Atmosphere during thermal treatment
- C04B2235/6582—Hydrogen containing atmosphere
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/12—Metallic interlayers
- C04B2237/124—Metallic interlayers based on copper
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/12—Metallic interlayers
- C04B2237/126—Metallic interlayers wherein the active component for bonding is not the largest fraction of the interlayer
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/12—Metallic interlayers
- C04B2237/126—Metallic interlayers wherein the active component for bonding is not the largest fraction of the interlayer
- C04B2237/127—The active component for bonding being a refractory metal
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/34—Oxidic
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/40—Metallic
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/78—Side-way connecting, e.g. connecting two plates through their sides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/84—Joining of a first substrate with a second substrate at least partially inside the first substrate, where the bonding area is at the inside of the first substrate, e.g. one tube inside another tube
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S228/00—Metal fusion bonding
- Y10S228/903—Metal to nonmetal
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49082—Resistor making
- Y10T29/49087—Resistor making with envelope or housing
- Y10T29/49098—Applying terminal
Description
Feb. 7, 1950 P. w. HAAYMAN ErAL 2,496,346
SEMICONDUCTIVE RESISTANCE PROVIDED wrrn METAL CONTACTS Filed Feb. 7, 1947 l/Vff/fMED/ATE M127? OFML'ML 0/ SBW-CQA/M/LTOR/MIA 60/ 1 1* 00/0746? 5EM/ CONDUCTOR INVENTORS P/Efffi W/LLEM HAA YMAN M410 BRU/N/NG @atented Feb. if, 1950 SEMICONDUCTIVE RESISTANCE PROVIDED WITH METAL CONTACTS V Pieter Willem Hazyman and Halo Brulnlng, Elndhoven, Netherlands, asslgnors to Hartford National Bank and Trust Company, Hartlord,
Conn, as trustee Application February 7,1947, Serial No. 121,090 In the Netherlands July 30, 1945 Section 1, Public Law 690, August 8, 1946 Patent expires July 30, 1965 4 Claims. l
Upon mounting current supply contacts on resistances made of semi-conductive material for example of either reduced or non-reduced oxides, a so-called blocking layer is frequentb' formed, which becomes manifest by dependance of the resistance on the voltage and dependance of the resistance value on the direction of current. A further disadvantage may be that the union is mechanically insuflicient. Readily adhering contacts can be mounted on a semi-conductive resistance without the formation of a blocking layer by applying by vaporization the metal which is contained in the semi-conductor as the cation, for example zinc with resistances made of zinc oxide, but it is difiicult or sometimes impossible to secure further connections to such a contact layer by welding or soldering.
According to the invention it is possible to mount metal contacts on resistances made of sintered, semi-conductive material, the conductlvity of which is due to a divergence in stoicheiometry owing to the presence of an excess of metal, without the aforesaid disadvantages occurring, by the use of an intermediate layer constituted by a metal mass which contains both the metal in which the semi-conductor is built up and the metal of which is made the contact body to be mounted or with which the latter is coated. The union is then brought about by a heating operation, in which the intermediate layer melts or sinters.
Ii desired, other metals may be added for the purpose of reducing the slntering or meltingtemperature respectively and of improving the flowing capacity.
The metal may be used as a mixture or as an alloy, for example in the pulverulent condition and is applied, preferably with the use of a plastic binder, as a paste to the ends of the resistance. The contact body to be mounted is then slipped on it, after which the metal-containing intermediate layer is caused to sinter or to melt respectively.
A resistance constituted by a sintered magnesia mass in which particles of partly reduced titanium oxide of the composition of TiOx (at between 1.6 and 1.7) are embedded to the extent of about 8%, may have mounted on it copper or copperclad iron current supply contacts with the aid.
of a mixture of Cu, '1! and Sn in a molecular ratio of :10:22. For this purpose about 10 grams of this mixture is worked with a solution of 2 grams of cresol-formaldehyde resin in 10 cm. 01' alcohol, into a paste. After a thin layer of it has been applied to the ends of the resistance and copper contact tags have been slipped on it the assembly is dried and then sintered at about 1000 C. in pure hydrogen.
For mountingcontacts constituted by a tinned iron tag to resistances substantially made of CdO, use may be made, for example, of an alloy of Cd and Sn in a molecular ratio of 4: 1.
In this case the union may be brought about by melting at about 250 C. in nitrogen.
What we claim is:
1. An electrical resistance comprising a body of sintered magnesia containing about 3% of" particles of reduced titanium oxide having the formula TiOg wherein x is between 1.6 and 1.7, copper contact members secured to said body of semi-conductive material, and an intermediate layer between said metal contact members and said body of semi-conductive material for securing the metal contacts to said body of semiconductive material, said intermediate metal layer consisting essentially of copper, titanium,
and tin in a molecular ratio of approximately 55: 10:2 respectively.
2. A method of manufacturing an electrical resistance comprising the steps of applying a layer of metal to selected portions of a body oi semi-conductive material which departs from stoichiometry and contains a metal to increase the conductivity thereof, said layer of metal containing as a constituent thereof the metal contained in said semi-conductive material, applying metal contact members over said metal coated portions of said semi-conductive body, said metal contact members being made of a metal which is contained in said metal layer. and heating said body in an inert atmosphere to fuse the intermediate metal layer into the metal contact members and said body of semiconductive material to firmly secure the metal contact members to said body of semi-conductive material. I
3. A method of manufacturing an electrical resistance comprising the steps of applying a layer of metal to selected portions of a body of semi-conductive material which departs :Zrom
auaue stoichiometry and contains a. metal to increase the conductivity thereof, said layer 0! metal containing as constituents thereof the metal contained in said semi-conductive material and a metal to reduce the melting temperature thereof, applying metal contact members over said metal coated portions of said body oi semi-conductive material, said metal contact members being made of a metal which is contained in the intermediate metal layer, and heating the body in an inert at mosphere at a reduced temperature to fuse the intermediate metal layer into the metal contact members and said body of semi-conductive ma terial to firmly secure the metal contact mem bers to said body of semi-conductive material.
4. A method of manufacturing an electrical resistance comprising the steps of applying a paste containing metal in a pulverulent state to selected portions of a body of semi-conductive material which departs from stoichiornetry and t;
contains a metal to increase the conductivity thereof, said paste containingas a constituent thereof the metal contained in said semi-con ductive material, applying metal contact members over said paste covered portions of said 25 body of semi-conductive material, said metal contact members being made or a metal which is contained in the metal of said paste, and heating the body in an inert atmosphere to fuse the metal contained in said paste into the metal contact members and said body of semi-conductive material to firmly secure the metal contact members to said body of semi-conductive material.
PIETER WILLEM HAAYMAN. HAJO BRUINING.
REFERENCES CITED The following references are of record in the idle of this patent:
UNITED STATES PATENTS Number Name Date l,'t85,6l8 Day Dec. 16, 1930 FOREIGN PATENTS Number Country Date tdddw Great Britain June 8, 1938 654L630 Great Britain July 12, 1943 20,274 Switzerland Sept. 11, 1899
Claims (1)
1. AN ELECTRICAL RESISTANCE COMPRISING A BODY OF SINTERED MAGNESIA CONTAINING ABOUT 3% OF PARTICLES OF REDUCED TITANIUM OXIDE HAVING THE FORMULA TIOX WHEREIN X IS BETWEEN 1.6 AND 1.7, COPPER CONTACT MEMBERS SECURED TO SAID BODY OF SEMI-CONDUCTIVE MATERIAL, AND AN INTERMEDIATE LAYER BETWEEN SAID METAL CONTACT MEMBERS AND SAID BODY OF SEMI-CONDUCTIVE MATERIAL FOR SECURING THE METAL CONTACTS TO SAID BODY OF SEMICONDUCTIVE MATERIAL, SAID INTERMEDIATE METAL LAYER CONSISTING ESSENTIALLY OF COPPER, TITANIUM, AND TIN IN A MOLECULAR RATIO OF APPROXIMATELY 55:10:2 RESPECTIVELY.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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NL2496346X | 1945-07-30 |
Publications (1)
Publication Number | Publication Date |
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US2496346A true US2496346A (en) | 1950-02-07 |
Family
ID=19874443
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Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US727090A Expired - Lifetime US2496346A (en) | 1945-07-30 | 1947-02-07 | Semiconductive resistance provided with metal contacts |
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Cited By (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2599751A (en) * | 1948-04-26 | 1952-06-10 | Federspiel Hermann | Welding process for joining a metal body and a semiconducting body composed of metallic and ceramic material |
US2633521A (en) * | 1949-06-28 | 1953-03-31 | Bell Telephone Labor Inc | High-temperature coefficient resistor and method of making it |
US2640813A (en) * | 1948-06-26 | 1953-06-02 | Aladdin Ind Inc | Reaction product of a mixed ferrite and lead titanate |
US2720573A (en) * | 1951-06-27 | 1955-10-11 | Dick O R Lundqvist | Thermistor disks |
US2838390A (en) * | 1954-06-01 | 1958-06-10 | Sylvania Electric Prod | Method of making metal-to-ceramic seals |
US2848587A (en) * | 1953-11-17 | 1958-08-19 | Mc Graw Edison Co | Fire detector cable |
US2857663A (en) * | 1954-02-09 | 1958-10-28 | Gen Electric | Metallic bond |
US2883305A (en) * | 1950-09-27 | 1959-04-21 | Auwarter Max | Photoelectric semiconductors and method of producing same |
US2883502A (en) * | 1955-01-28 | 1959-04-21 | Us Gasket Company | Electrical resistors and other bodies with negligible temperature coefficient of expansion |
US2885522A (en) * | 1957-07-01 | 1959-05-05 | Sprague Electric Co | Electrical component and casting arrangement |
US2903666A (en) * | 1955-08-23 | 1959-09-08 | Speer Carbon Company | Resistors with integral molded metal terminals |
US2914428A (en) * | 1953-11-09 | 1959-11-24 | Ruckelshaus | Formation of hard metallic films |
US2936434A (en) * | 1956-10-05 | 1960-05-10 | Mc Graw Edison Co | Fire detector cable |
US2967282A (en) * | 1957-09-30 | 1961-01-03 | Gen Electric | High temperature resistor |
US3086187A (en) * | 1960-05-20 | 1963-04-16 | American Radiator & Standard | Electrical heating element |
US3100339A (en) * | 1956-08-30 | 1963-08-13 | Gen Electric | Method of making composite bodies |
US3216088A (en) * | 1961-01-09 | 1965-11-09 | Ass Elect Ind | Bonding of metal plates to semi-conductor materials |
US3432365A (en) * | 1963-02-07 | 1969-03-11 | North American Rockwell | Composite thermoelectric assembly having preformed intermediate layers of graded composition |
US3444006A (en) * | 1963-12-16 | 1969-05-13 | Westinghouse Electric Corp | Thermoelectric element having a diffusion bonded coating |
US3494803A (en) * | 1966-05-12 | 1970-02-10 | Teledyne Inc | Method of bonding a semi-conductor to a metal conductor and resultant product |
US3547706A (en) * | 1967-04-21 | 1970-12-15 | Teledyne Inc | Junction assembly for thermocouples |
US3865632A (en) * | 1973-04-23 | 1975-02-11 | Atomic Energy Commission | Terminal for thermoelectric element |
US3973997A (en) * | 1974-06-24 | 1976-08-10 | Jade Controls, Inc. | Thermocouple with improved hot junction |
US4470034A (en) * | 1982-02-26 | 1984-09-04 | Kennecott Corporation | Electrical resistor structure |
US4968377A (en) * | 1988-04-09 | 1990-11-06 | Georg Sillner | Method and apparatus for shaping cylindrical electrical parts |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH20274A (en) * | 1899-09-11 | 1900-12-31 | Aeg | Electrical resistance |
US1785618A (en) * | 1920-04-09 | 1930-12-16 | Gen Railway Signal Co | Copper-carbon contact |
GB486639A (en) * | 1937-09-10 | 1938-06-08 | Rosenthal Isolatoren Gmbh | An improved method of making high ohmic resistances with low temperature coefficient |
GB554630A (en) * | 1942-01-09 | 1943-07-13 | Mullard Radio Valve Co Ltd | Improvements in or relating to high frequency resistances |
-
1947
- 1947-02-07 US US727090A patent/US2496346A/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH20274A (en) * | 1899-09-11 | 1900-12-31 | Aeg | Electrical resistance |
US1785618A (en) * | 1920-04-09 | 1930-12-16 | Gen Railway Signal Co | Copper-carbon contact |
GB486639A (en) * | 1937-09-10 | 1938-06-08 | Rosenthal Isolatoren Gmbh | An improved method of making high ohmic resistances with low temperature coefficient |
GB554630A (en) * | 1942-01-09 | 1943-07-13 | Mullard Radio Valve Co Ltd | Improvements in or relating to high frequency resistances |
Cited By (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2599751A (en) * | 1948-04-26 | 1952-06-10 | Federspiel Hermann | Welding process for joining a metal body and a semiconducting body composed of metallic and ceramic material |
US2640813A (en) * | 1948-06-26 | 1953-06-02 | Aladdin Ind Inc | Reaction product of a mixed ferrite and lead titanate |
US2633521A (en) * | 1949-06-28 | 1953-03-31 | Bell Telephone Labor Inc | High-temperature coefficient resistor and method of making it |
US2883305A (en) * | 1950-09-27 | 1959-04-21 | Auwarter Max | Photoelectric semiconductors and method of producing same |
US2720573A (en) * | 1951-06-27 | 1955-10-11 | Dick O R Lundqvist | Thermistor disks |
US2914428A (en) * | 1953-11-09 | 1959-11-24 | Ruckelshaus | Formation of hard metallic films |
US2848587A (en) * | 1953-11-17 | 1958-08-19 | Mc Graw Edison Co | Fire detector cable |
US2857663A (en) * | 1954-02-09 | 1958-10-28 | Gen Electric | Metallic bond |
US2838390A (en) * | 1954-06-01 | 1958-06-10 | Sylvania Electric Prod | Method of making metal-to-ceramic seals |
US2883502A (en) * | 1955-01-28 | 1959-04-21 | Us Gasket Company | Electrical resistors and other bodies with negligible temperature coefficient of expansion |
US2903666A (en) * | 1955-08-23 | 1959-09-08 | Speer Carbon Company | Resistors with integral molded metal terminals |
US3100339A (en) * | 1956-08-30 | 1963-08-13 | Gen Electric | Method of making composite bodies |
US2936434A (en) * | 1956-10-05 | 1960-05-10 | Mc Graw Edison Co | Fire detector cable |
US2885522A (en) * | 1957-07-01 | 1959-05-05 | Sprague Electric Co | Electrical component and casting arrangement |
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