US2865794A - Semi-conductor device with telluride containing ohmic contact and method of forming the same - Google Patents

Semi-conductor device with telluride containing ohmic contact and method of forming the same Download PDF

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Publication number
US2865794A
US2865794A US550502A US55050255A US2865794A US 2865794 A US2865794 A US 2865794A US 550502 A US550502 A US 550502A US 55050255 A US55050255 A US 55050255A US 2865794 A US2865794 A US 2865794A
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US
United States
Prior art keywords
tellurium
semi
ohmic contact
body portion
telluride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US550502A
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English (en)
Inventor
Kroger Ferdinand Anne
Nobel Dirk De
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
US Philips Corp
North American Philips Co Inc
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US Philips Corp
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Publication date
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Publication of US2865794A publication Critical patent/US2865794A/en
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    • H10P14/47—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/441—Deposition of conductive or insulating materials for electrodes
    • H01L21/445—Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/40—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10P95/00—
    • H10P95/50—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S228/00—Metal fusion bonding
    • Y10S228/903—Metal to nonmetal

Definitions

  • the invention relates to semi-conductor devices, and especially to the establishment of an ohmic contact to a semi-conductive body of a p-type-conductivity telluride of a bivalent metal.
  • the compounds concerned are the tellurides of Zn, Cd, Hg, Sn and Pb. These compounds may, as is known, exhibit p-type conductivity since, as compared with the correct stoichiometric composition, the anion is contained therein in an excessive quantity, combined or not combined with monovalent cations, for example those of Cu, Ag, Au and the alkaline metals.
  • the incorporation of the tellurium may be due to diffusion or to the fact that a quantity of the semi-conductive compound is dissolved in the melt and recrystallized out subsequent to cooling on an undissolved portion of the body as a layer contaminated or doped by excess tellurium.
  • a non-oxidizing atmosphere suitable for the melting operation may for example be nitrogen or a mixture of nitrogen with a few percent of hydrogen.
  • the fusing time has no effect on the ohmic property of the connection; the tellurium only moves deeper into the semi-conductive body, as the time of treatment is made longer.
  • the tellurium may be applied to the semi-conductive body in various ways, for example by evaporation, by applying a powder, if desired in the form of a paste, or by applying a piece or pellet of tellurium directly.
  • Fig. 1 is a cross-sectional view of the semiconductive body with the tellurium fused thereto
  • Fig. 2 is a flow diagram illustrating the method of the invention.
  • Fig. 1 shows the telluride compound p-type semi-conductive body 10, on the upper surface of which is fused a pellet 11 of tellurium metal.
  • the dotted line area 12 underlying the tellurium metal mass 11 represents the area in which has been in- 2,865,794 Patented Dec. 23, 1958 corporated a large excess of tellurium atoms.
  • This area 12 forms a good ohmic contact to the underlying p-type area 10, and the metal mass 11 forms a good contact with the underlying area 12, thereby establishing the desired connection to the semi-conductive body.
  • Fig. 2 is a flow diagram of the method of the invention, and comprises, as shown, application of the tellurium mass to the semi-conductive body, followed by heating in a non-oxidizing atmosphere to cause the two to fuse together.
  • the tellurium contact according to the invention may for example be provided on a plate or wafer of p-type conductive CdTe by melting down or fusing thereto a pellet of tellurium at 500 C. in a nitrogen atmosphere with 10% of hydrogen for two minutes.
  • the other tellurides referred to above may also be provided with a satisfactory ohmic contact in this manner.
  • the tellurium contact according to the invention may be coated, for example by evaporation, with a metal layer, for example gold.
  • Current supply wires if desired, can be welded directly to the tellurium or be secured thereto by means of soft solder, for example a lead-tin solder.
  • a semi-conductor device comprising a body having a p-type semi-conductive portion consisting essentially of a telluride of a bivalent metal selected from the group con sisting of zinc, cadmium, mercury, tin and lead, and a mass of tellurium fused to said body portion to establish an ohmic contact thereto.
  • a semi-conductor device comprising a semi-conductive body containing a p-type-conductivity region consisting essentially of a compound of tellurium and a metal selected from the group consisting of Zinc, cadmium, mercury, tin and lead, and an excess-telluriumdoped layer portion in said region and constituting an electrical connection thereto.
  • a method of making an ohmic contact to a p-type semi-conductive body portion consisting essentially of a telluride of a metal selected from the group consisting of zinc, cadmium, mercury, tin and lead which comprises contacting said body portion with tellurium metal, and fusing said tellurium to said body portion in a predominantly nitrogen gas atmosphere to incorporate some tellurium in the body portion and thereby establish the ohmic contact.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacture And Refinement Of Metals (AREA)
US550502A 1954-12-01 1955-12-01 Semi-conductor device with telluride containing ohmic contact and method of forming the same Expired - Lifetime US2865794A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL339990X 1954-12-01

Publications (1)

Publication Number Publication Date
US2865794A true US2865794A (en) 1958-12-23

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Family Applications (1)

Application Number Title Priority Date Filing Date
US550502A Expired - Lifetime US2865794A (en) 1954-12-01 1955-12-01 Semi-conductor device with telluride containing ohmic contact and method of forming the same

Country Status (7)

Country Link
US (1) US2865794A (OSRAM)
BE (1) BE543253A (OSRAM)
CH (1) CH339990A (OSRAM)
DE (1) DE1009311B (OSRAM)
FR (1) FR1136613A (OSRAM)
GB (1) GB789338A (OSRAM)
NL (2) NL192839A (OSRAM)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2937113A (en) * 1956-05-15 1960-05-17 Siemens Ag Method of producing an electrodecarrying silicon semiconductor device
US3038241A (en) * 1958-12-22 1962-06-12 Sylvania Electric Prod Semiconductor device
US3080261A (en) * 1959-07-13 1963-03-05 Minnesota Mining & Mfg Bonding of lead based alloys to silicate based ceramic members
DE1149460B (de) * 1959-10-19 1963-05-30 Rca Corp Elektrische Halbleiteranordnung mit einem eigenleitenden Kristall aus Cadmiumsulfid,Cadmiumselenid, Zinksulfid, Zinkselenid oder Zinkoxyd
US3188594A (en) * 1962-01-25 1965-06-08 Gen Electric Thermally sensitive resistances
US3232719A (en) * 1962-01-17 1966-02-01 Transitron Electronic Corp Thermoelectric bonding material
US3271591A (en) * 1963-09-20 1966-09-06 Energy Conversion Devices Inc Symmetrical current controlling device
US3327137A (en) * 1964-04-10 1967-06-20 Energy Conversion Devices Inc Square wave generator employing symmetrical, junctionless threshold-semiconductor and capacitor in series circuit devoid of current limiting impedances
US3366518A (en) * 1964-07-01 1968-01-30 Ibm High sensitivity diodes
US4461785A (en) * 1982-11-19 1984-07-24 E. I. Du Pont De Nemours And Company Process for electrical terminal contact metallization

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1751361A (en) * 1926-06-01 1930-03-18 Ruben Rectifier Corp Electric-current rectifier
US2603693A (en) * 1950-10-10 1952-07-15 Bell Telephone Labor Inc Semiconductor signal translating device
US2608611A (en) * 1949-08-17 1952-08-26 Bell Telephone Labor Inc Selenium rectifier including tellurium and method of making it
US2790736A (en) * 1955-01-31 1957-04-30 Rohm & Haas Methods of making coated paper products and the products obtained

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1751361A (en) * 1926-06-01 1930-03-18 Ruben Rectifier Corp Electric-current rectifier
US2608611A (en) * 1949-08-17 1952-08-26 Bell Telephone Labor Inc Selenium rectifier including tellurium and method of making it
US2603693A (en) * 1950-10-10 1952-07-15 Bell Telephone Labor Inc Semiconductor signal translating device
US2790736A (en) * 1955-01-31 1957-04-30 Rohm & Haas Methods of making coated paper products and the products obtained

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2937113A (en) * 1956-05-15 1960-05-17 Siemens Ag Method of producing an electrodecarrying silicon semiconductor device
US3038241A (en) * 1958-12-22 1962-06-12 Sylvania Electric Prod Semiconductor device
US3080261A (en) * 1959-07-13 1963-03-05 Minnesota Mining & Mfg Bonding of lead based alloys to silicate based ceramic members
DE1149460B (de) * 1959-10-19 1963-05-30 Rca Corp Elektrische Halbleiteranordnung mit einem eigenleitenden Kristall aus Cadmiumsulfid,Cadmiumselenid, Zinksulfid, Zinkselenid oder Zinkoxyd
US3232719A (en) * 1962-01-17 1966-02-01 Transitron Electronic Corp Thermoelectric bonding material
US3188594A (en) * 1962-01-25 1965-06-08 Gen Electric Thermally sensitive resistances
US3271591A (en) * 1963-09-20 1966-09-06 Energy Conversion Devices Inc Symmetrical current controlling device
US3327137A (en) * 1964-04-10 1967-06-20 Energy Conversion Devices Inc Square wave generator employing symmetrical, junctionless threshold-semiconductor and capacitor in series circuit devoid of current limiting impedances
US3366518A (en) * 1964-07-01 1968-01-30 Ibm High sensitivity diodes
US4461785A (en) * 1982-11-19 1984-07-24 E. I. Du Pont De Nemours And Company Process for electrical terminal contact metallization

Also Published As

Publication number Publication date
NL88273C (OSRAM)
NL192839A (OSRAM)
BE543253A (OSRAM)
CH339990A (de) 1959-07-31
FR1136613A (fr) 1957-05-16
DE1009311B (de) 1957-05-29
GB789338A (en) 1958-01-22

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