US2865793A - Method of making electrical connection to semi-conductive selenide or telluride - Google Patents

Method of making electrical connection to semi-conductive selenide or telluride Download PDF

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Publication number
US2865793A
US2865793A US549754A US54975455A US2865793A US 2865793 A US2865793 A US 2865793A US 549754 A US549754 A US 549754A US 54975455 A US54975455 A US 54975455A US 2865793 A US2865793 A US 2865793A
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United States
Prior art keywords
metal
bivalent metal
bivalent
semi
conductive
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Expired - Lifetime
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US549754A
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English (en)
Inventor
Nobel Dirk De
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US Philips Corp
North American Philips Co Inc
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US Philips Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/441—Deposition of conductive or insulating materials for electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/441—Deposition of conductive or insulating materials for electrodes
    • H01L21/445—Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer

Definitions

  • This invention relates to a method of making an electrical connection to a semi-conductive body, and, in particular, to the application of precious-metal layers to bodies of a semi-conductive selenide or telluride of a bivalent metal.
  • the compounds concerned are the selenides and tellurides of the metals Zn, Cd, Hg, Sn and Pb.
  • the nature of the contact i. e. whether it is ohmic or rectifying, is of minor importance.
  • the invention permits of producing ohmic or rectifying contacts in a very simple manner and under particular circumstances.
  • the aforesaid selenides and tellurides of bivalent metals are brought into contact with a solution of an, elementary precious-metal salt, so that ions of the bivalent metal emerge from the body, i. e., are dissolved in the solution, and a precipitate of the precious-metal is formed on the surface depleted of the bivalent metal.
  • precious metals can be used which are lower in the electromotive series than the bivalent metal in the compound that is afiected.
  • the properties of the precious-metal are less favourable, for example if the specific resistance is too high, or if the permeability for particular wavelengths of the light is too small, the precious-metal may be removed wholly or partly and a different metal, for example iridium, may be applied, since the ohmic or rectifying connection resulting actually exists between the surface layer of the body that has lost bivalent metal ions by reason of reaction with the solution, and the subjacent semi-conductive material.
  • a different metal for example iridium
  • This method is performed in a very simple manner if mercury is applied, since the mercury, subsequent to its deposition, can be removed in a very simple manner.
  • the strength and pH of the precious-metal solution is of minor importance. Solutions of /2, and 50% of precious-metal salt, acidified or not, even to a HCl-content of 20%, yield the same results.
  • solutions of AgNO AuCl PtCl RhCl OsCl PdCl or IrCl Salts in which the precious-metal ion is contained in complex form, for instance KAuCl K PtCl do not yield, however, the desired precious-metal layer.
  • the precious-metal ion is contained in complex form, or the precious-metal precipitates in the form of a hydroxide.
  • organic salt solutions are dissociated too little for obtaining a good result. Thus these are also not satisfactory.
  • the time of treatment is not important for the nature of the contact, whether it is ohmic or rectifying. As the time of treatment is longer, the contact penetrates deeper into the semi-conductive body. Solutions of salts of Hg and Au yield rapidly a satisfactorily adhering layer at room temperature. With a treatment with a solution of salts of Pt, Rh, or Ir it is desirable to carry out a slight heating, for example to 50 C. for a few minutes.
  • Example I A plate of p-type CdTe is provided on both sides with a gold contact by applying thereto a drop of a 10% AuCl solution, by causing it to react for about one minute,
  • Example II A plate of p-conductive HgSe is provided with a gold contact by causing a drop of a 10% AuCl solution to react therewith.
  • Example IV An n-conductive CdTe-crystal plate with about 3 X10 charge carriers per cm. is provided on one side with an ohmic contact by fusing thereto indium in a nitrogen atmosphere with 10% of hydrogen. The other side of 'the plate is treated with a 10% AgNO solution. Sub
  • the silver layer or underlying rectifying connection Upon exposure to about 2700 lux from a tungsten tape lamp (colour temperature 2800 K.) the silver layer or underlying rectifying connection exhibits a photo-electromotive force and/or a photo-current.
  • the short-circuit current is 140 a. and the voltage is 395 mv. with an infinite external resistance.
  • the maximum sensitivity lies at a wavelength of about 7800 A.
  • Example V To a plate of CdTe with n-conductivity and a specific resistance of 0.1 ohm cm. is applied, by treating it with a solution of AuCl a layer of gold. This layer is removed with the aid of a solution of potassium-cyanide, after which such a thin layer of iridium is applied that of the visible light is permitted to pass. It is found that a short-circuit current may be obtained, which is five times higher than that obtainable by means of a gold electrode.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electrolytic Production Of Metals (AREA)
US549754A 1954-12-06 1955-11-29 Method of making electrical connection to semi-conductive selenide or telluride Expired - Lifetime US2865793A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL354169X 1954-12-06

Publications (1)

Publication Number Publication Date
US2865793A true US2865793A (en) 1958-12-23

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ID=19785152

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US549754A Expired - Lifetime US2865793A (en) 1954-12-06 1955-11-29 Method of making electrical connection to semi-conductive selenide or telluride

Country Status (7)

Country Link
US (1) US2865793A (fr)
BE (1) BE543390A (fr)
CH (1) CH354169A (fr)
DE (1) DE1255820B (fr)
FR (1) FR1143213A (fr)
GB (1) GB800557A (fr)
NL (2) NL192972A (fr)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3187414A (en) * 1959-02-05 1965-06-08 Baldwin Co D H Method of producing a photocell assembly
US3208835A (en) * 1961-04-27 1965-09-28 Westinghouse Electric Corp Thermoelectric members
US3225273A (en) * 1960-05-13 1965-12-21 Philips Corp Semi-conductor devices and methods for their manufacture
US3271591A (en) * 1963-09-20 1966-09-06 Energy Conversion Devices Inc Symmetrical current controlling device
US3366518A (en) * 1964-07-01 1968-01-30 Ibm High sensitivity diodes
US3523038A (en) * 1965-06-02 1970-08-04 Texas Instruments Inc Process for making ohmic contact to planar germanium semiconductor devices
US4468685A (en) * 1980-03-27 1984-08-28 Farrow Robin F C Infrared detector using grey tin
US20060121716A1 (en) * 2002-09-20 2006-06-08 Gerard Petroz Method for the production of electrodes on a type II or VI semiconductor material or on a compound of said material

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2677715A (en) * 1950-09-23 1954-05-04 Alois Vogt Dr Optical-electrical conversion device comprising a light-permeable metal electrode
US2710813A (en) * 1951-01-02 1955-06-14 Rca Corp Cadmium selenide-zinc selenide photoconductive electrode and method of producing same

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2560979A (en) * 1948-07-30 1951-07-17 Padio Corp Of America Chemical deposition of metallic films

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2677715A (en) * 1950-09-23 1954-05-04 Alois Vogt Dr Optical-electrical conversion device comprising a light-permeable metal electrode
US2710813A (en) * 1951-01-02 1955-06-14 Rca Corp Cadmium selenide-zinc selenide photoconductive electrode and method of producing same

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3187414A (en) * 1959-02-05 1965-06-08 Baldwin Co D H Method of producing a photocell assembly
US3225273A (en) * 1960-05-13 1965-12-21 Philips Corp Semi-conductor devices and methods for their manufacture
US3208835A (en) * 1961-04-27 1965-09-28 Westinghouse Electric Corp Thermoelectric members
US3271591A (en) * 1963-09-20 1966-09-06 Energy Conversion Devices Inc Symmetrical current controlling device
US3366518A (en) * 1964-07-01 1968-01-30 Ibm High sensitivity diodes
US3523038A (en) * 1965-06-02 1970-08-04 Texas Instruments Inc Process for making ohmic contact to planar germanium semiconductor devices
US4468685A (en) * 1980-03-27 1984-08-28 Farrow Robin F C Infrared detector using grey tin
US20060121716A1 (en) * 2002-09-20 2006-06-08 Gerard Petroz Method for the production of electrodes on a type II or VI semiconductor material or on a compound of said material
US7553746B2 (en) 2002-09-20 2009-06-30 Commissariat A L'energie Atomique Method for manufacturing electrodes on a semiconducting material of type II-VI or on a compound of this material

Also Published As

Publication number Publication date
FR1143213A (fr) 1957-09-27
NL99205C (fr)
DE1255820B (de) 1967-12-07
NL192972A (fr)
CH354169A (de) 1961-05-15
GB800557A (en) 1958-08-27
BE543390A (fr)

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