US2855368A - Method of producing a non-vaporizing getter - Google Patents

Method of producing a non-vaporizing getter Download PDF

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Publication number
US2855368A
US2855368A US455752A US45575254A US2855368A US 2855368 A US2855368 A US 2855368A US 455752 A US455752 A US 455752A US 45575254 A US45575254 A US 45575254A US 2855368 A US2855368 A US 2855368A
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US
United States
Prior art keywords
vaporizing
gas
getter
sintering
zirconium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US455752A
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English (en)
Inventor
Jr Hendrik Johannes Re Perdijk
Fast Johann Diedrich
Fransen Jan Josephus Bernardus
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US Philips Corp
North American Philips Co Inc
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US Philips Corp
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Publication of US2855368A publication Critical patent/US2855368A/en
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J7/00—Details not provided for in the preceding groups and common to two or more basic types of discharge tubes or lamps
    • H01J7/14—Means for obtaining or maintaining the desired pressure within the vessel
    • H01J7/18—Means for absorbing or adsorbing gas, e.g. by gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J17/00—Gas-filled discharge tubes with solid cathode
    • H01J17/02—Details
    • H01J17/22—Means for obtaining or maintaining the desired pressure within the tube
    • H01J17/24—Means for absorbing or adsorbing gas, e.g. by gettering

Definitions

  • the invention consists of one or more refractory metals capable of forming non-gaseous hydrides, such as zirconium, thorium, titanium, tantalum, niobium and vanadium. Furthermore the invention relates to a getter produced by carrying out this method.
  • the gas-absorbing constituent of which entirely or substantially consists of one or more refractory metals capable offorming non-gaseous-hydrides, such as zirconium, thorium, titanium, tantalum, niobium and vanadium the powdered gas-absorbing metal is mixed and compressed with one or more of the following non-vaporizing likewise powdered elements, which may or may not be alloyed with one another, aluminum, silicon, beryllium, cerium, lanthanum and cerium mixed metal, after which the compressed mass is arranged in a discharge tube or vacuum vessel and activated by heating.
  • the surface layers on the gas-binding metal are reduced entirely or in part, or the additional element exhibits a chemical or physical interaction with the closing layers such as to enable the subjacent refractory metal to exercise its gas-absorption efiect.
  • the heating temperature required is not as high as if the oxide should be caused to diffuse inwards, in which case the refractory metal also sinters to compactn'ess with the result that the free surface is reduced and the gas-absorption effect is again adversely 'afiecte'd.
  • this metal powder cannot be degassed without sintering to compactness, as is the case with powdered zirconium, it is possible to mix this metal powder with some other refractory metal powder which may not absorb gas, such as powdered tungsten, in which case sintering to compactness does not occur to the same extent and the "degassed product can readily be worked into powder.
  • a further metal which at a high temperature binds the added element, for example nickel, iron or titanium.
  • a further metal which at a high temperature binds the added element, for example nickel, iron or titanium.
  • the accessibility of the fine grains of the gas-absorbing metal can be improved while due to the liberated reaction heat the activation is accelerated.
  • the refractory gas-absorbing metal powder it is also possible to start with the hydride which due to the heating process is already decomposed before the activation temperature is reached. If the refractory metal and the additional metal are capable of forming an alloy, this may contribute in some cases to the gas-absorption efiect. It will be appreciated that, if titanium is used as gas-absorbing metal, the additional metal should not be titanium also.
  • Example II Thorium and cerium silicon (Th and ICeSi) are mixed at a weight ratio of 3:1 and in the manner described hereinbefore worked into a pastille. In this case also, the
  • pulverulent metal selected from the group consisting of nickel, iron and titanium to form a coherent mass, mounting said mass within a vessel, and then activating said mass for the first, time While within saidvessel by subjecting it to heat without sintering or vaporizing it.
  • Example I V Non-degassed powdered'zirconium is mixed'with pow dered aluminum and powdered nickel at a weight ratio of 3 :1 :2 and the mixture is compressed into apastille, which is mounted as getter in a discharge tube. After heating to 700 C. the aluminum activates the zirconium but also reacts with the nickel 'so that a spongy skeleton of an aluminum-nickel alloy is produced containing activated zirconium grains which are held by the skeleton,
  • the nickel may also be added in the form of nickel titanium-Ni Ti, which is not magnetic.
  • Example V If in the preceding example degassed powdered zirconium and tungsten are used instead of the non-degassed zirconium, the quantity by weight of the tungsten being one and a half times that of the zirconium, a satisfactory getter is also obtained.
  • the mixing ratio ZrW- A1Ni is 3:4:5:1:2. This is also the case if tantalum is used as an alternative to tungsten.
  • a method of producing a non-vaporizing getter comprising mixing and compressing without sintering
  • pulverulent gas-absorbing thorium and pulverulent cerium-silicon in a weightratio of about 3:1 to form a coherent body mounting saidbody within a discharge tube, and activating said body by subjecting the same to an elevated temperature without sintering or vaporizing it.
  • Amethod of producing anon-vaporizing getter comprising mixing and compressing without sintering pulverulent gas-absorbing Zirconium and pulverulent titanium-aluminum to form a, coherent body, mounting said body within a discharge tube, and activating said body by subjecting the same to an elevated temperature without'sinteringor vaporizing it.
  • a method of producing a non-vaporizing getter comprising mixing and compressing without sintering pulverulent gas-absorbing zirconium, pulverulent aluminum and pulverulent nickel to form a coherent body, mounting said body within a discharge tube, and activating said body by subjecting thesame to an elevated temperature without sintering or vaporizing it.

Landscapes

  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
  • Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
US455752A 1953-09-30 1954-09-13 Method of producing a non-vaporizing getter Expired - Lifetime US2855368A (en)

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NL2855368X 1953-09-30

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US2855368A true US2855368A (en) 1958-10-07

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BE (1) BE532147A (en))

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3007816A (en) * 1958-07-28 1961-11-07 Motorola Inc Decontamination process
US3082174A (en) * 1959-11-17 1963-03-19 North American Phillips Compan Method of manufacturing a non-evaporating getter and getter made by this method
US3187885A (en) * 1961-11-21 1965-06-08 Philips Corp Getter
US3203901A (en) * 1962-02-15 1965-08-31 Porta Paolo Della Method of manufacturing zirconiumaluminum alloy getters
US3259490A (en) * 1963-05-07 1966-07-05 Motorola Inc Gettering in semiconductor devices
US3408130A (en) * 1966-01-08 1968-10-29 Philips Corp Nonevaporative getter
US3525009A (en) * 1968-02-05 1970-08-18 Tokyo Shibaura Electric Co Low pressure mercury vapour discharge lamp including an alloy type getter coating
US3584253A (en) * 1968-04-01 1971-06-08 Siemens Ag Getter structure for electrical discharge and method of making the same
DE2340102A1 (de) * 1972-08-10 1974-02-21 Getters Spa Gettervorrichtung und -material
DE2361532A1 (de) * 1972-12-14 1974-06-27 Getters Spa Gettervorrichtung und verfahren zu deren herstellung
US4297082A (en) * 1979-11-21 1981-10-27 Hughes Aircraft Company Vacuum gettering arrangement
US4382646A (en) * 1980-11-13 1983-05-10 Radcal Corporation Method for removing gases caused by out-gassing in a vacuum vessel
DE3235681A1 (de) * 1981-11-02 1983-05-11 Maja Feodos'evna Bojarina Nichtverdampfbarer getter
US4428856A (en) 1982-09-30 1984-01-31 Boyarina Maya F Non-evaporable getter
US6139390A (en) * 1996-12-12 2000-10-31 Candescent Technologies Corporation Local energy activation of getter typically in environment below room pressure
US6194830B1 (en) 1996-12-12 2001-02-27 Candescent Technologies Corporation Multi-compartment getter-containing flat-panel device
US20030122485A1 (en) * 2001-12-28 2003-07-03 Fujitsu Limited Gas discharge tube

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1663561A (en) * 1927-03-03 1928-03-27 Westinghouse Lamp Co Electron-discharge device
US1958967A (en) * 1931-10-22 1934-05-15 Allg Elek Tatz Ges Electron discharge tube and method of making same
US2018965A (en) * 1933-11-10 1935-10-29 Kemet Lab Co Inc Clean-up agent
US2362468A (en) * 1941-09-27 1944-11-14 Fansteel Metallurgical Corp Getter
US2368060A (en) * 1942-01-01 1945-01-23 Bell Telephone Labor Inc Coating of electron discharge device parts
US2444158A (en) * 1944-07-31 1948-06-29 Fansteel Metallurgical Corp Thermionic device and getter elements therefor
US2449786A (en) * 1943-03-05 1948-09-21 Westinghouse Electric Corp Getter

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1663561A (en) * 1927-03-03 1928-03-27 Westinghouse Lamp Co Electron-discharge device
US1958967A (en) * 1931-10-22 1934-05-15 Allg Elek Tatz Ges Electron discharge tube and method of making same
US2018965A (en) * 1933-11-10 1935-10-29 Kemet Lab Co Inc Clean-up agent
US2362468A (en) * 1941-09-27 1944-11-14 Fansteel Metallurgical Corp Getter
US2368060A (en) * 1942-01-01 1945-01-23 Bell Telephone Labor Inc Coating of electron discharge device parts
US2449786A (en) * 1943-03-05 1948-09-21 Westinghouse Electric Corp Getter
US2444158A (en) * 1944-07-31 1948-06-29 Fansteel Metallurgical Corp Thermionic device and getter elements therefor

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3007816A (en) * 1958-07-28 1961-11-07 Motorola Inc Decontamination process
US3082174A (en) * 1959-11-17 1963-03-19 North American Phillips Compan Method of manufacturing a non-evaporating getter and getter made by this method
US3187885A (en) * 1961-11-21 1965-06-08 Philips Corp Getter
US3203901A (en) * 1962-02-15 1965-08-31 Porta Paolo Della Method of manufacturing zirconiumaluminum alloy getters
US3259490A (en) * 1963-05-07 1966-07-05 Motorola Inc Gettering in semiconductor devices
US3408130A (en) * 1966-01-08 1968-10-29 Philips Corp Nonevaporative getter
US3525009A (en) * 1968-02-05 1970-08-18 Tokyo Shibaura Electric Co Low pressure mercury vapour discharge lamp including an alloy type getter coating
US3584253A (en) * 1968-04-01 1971-06-08 Siemens Ag Getter structure for electrical discharge and method of making the same
DE2340102A1 (de) * 1972-08-10 1974-02-21 Getters Spa Gettervorrichtung und -material
US3926832A (en) * 1972-08-10 1975-12-16 Getters Spa Gettering structure
DE2361532A1 (de) * 1972-12-14 1974-06-27 Getters Spa Gettervorrichtung und verfahren zu deren herstellung
US4297082A (en) * 1979-11-21 1981-10-27 Hughes Aircraft Company Vacuum gettering arrangement
US4382646A (en) * 1980-11-13 1983-05-10 Radcal Corporation Method for removing gases caused by out-gassing in a vacuum vessel
DE3235681A1 (de) * 1981-11-02 1983-05-11 Maja Feodos'evna Bojarina Nichtverdampfbarer getter
US4428856A (en) 1982-09-30 1984-01-31 Boyarina Maya F Non-evaporable getter
US6139390A (en) * 1996-12-12 2000-10-31 Candescent Technologies Corporation Local energy activation of getter typically in environment below room pressure
US6194830B1 (en) 1996-12-12 2001-02-27 Candescent Technologies Corporation Multi-compartment getter-containing flat-panel device
US20030122485A1 (en) * 2001-12-28 2003-07-03 Fujitsu Limited Gas discharge tube
US7049748B2 (en) * 2001-12-28 2006-05-23 Fujitsu Limited Display device employing gas discharge tubes arranged in parallel between front and rear substrates to comprise a display screen, each tube having a light emitting section as part of the display screen and a cleaning section connected to the light emitting section but displaced from the display screen

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Publication number Publication date
BE532147A (en))

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