US2712521A - Process of making bismuth resistances - Google Patents

Process of making bismuth resistances Download PDF

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Publication number
US2712521A
US2712521A US228573A US22857351A US2712521A US 2712521 A US2712521 A US 2712521A US 228573 A US228573 A US 228573A US 22857351 A US22857351 A US 22857351A US 2712521 A US2712521 A US 2712521A
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US
United States
Prior art keywords
bismuth
resistances
cathode
resistance
deposit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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US228573A
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English (en)
Inventor
Aragone Jaime Jose F Guardiola
Reinwald Oskar
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Voltohm Processes Ltd
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Voltohm Processes Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
    • H01C17/14—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by chemical deposition
    • H01C17/16—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by chemical deposition using electric current
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31511—Of epoxy ether
    • Y10T428/31515—As intermediate layer
    • Y10T428/31522—Next to metal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal
    • Y10T428/31688—Next to aldehyde or ketone condensation product

Definitions

  • bismuth which gives the highest resistance variations for a given variation of the magnetic field in which this metal is placed.
  • bismuth wire resistances were manufactured up to the present time, but their preparation required considerable time and was Xpensive and ditlicult; moreover, the resistances thus obtained were thick and of very low values.
  • Very thin resistances may be manufactured by eifecting a metallic deposit on an insulating support by vacuum evaporation. However, this method only gives a deposit whose thickness is about 1 micron. Due to the fact that this thickness is generally too small for the usual applications, it is necessary to repeat the operation several times until a deposit of the desired thickness is obtained, with the result that the cost of the resistance is greatly increased.
  • the object of the present invention is a manufacturing process for a bismuth resistance, which avoids the above mentioned inconveniences.
  • This process consists in electrolytically depositing a layer of said metal on a conducting support, applying a thin insulating support to this electrolytic deposit and then dissolving, at least partly, the conducting support by means of at least one chemical agent which does not dissolve either the electrolytic deposit or the insulating support.
  • the attached drawing shows, schematically and as an example, a resistance obtained according to the process, object of the invention, at various manufacturing stages.
  • Fig. l is a side view of a resistance in the course of manufacture.
  • Fig. 2 is a sectional View according to Il-ll on Fig. l.
  • Figs. 3 to 6 represent sectional views of a resistance at various manufacturing stages.
  • Figs. 7 and 8 represent schematically sectional views of two resistances in the course of manufacture, according to two variations of the process, object of the invention.
  • Fig. 9 represents a perspective view of a cylindrical resistance.
  • Fig. 10 is a sectional view according to X-X on Fig. 9.
  • Fig. 1l is a perspective view of a cylindrical resistance with practically no self-induction.'
  • Figs. l and 2 represent, schematically, a copper plate 1, on a part of which has been applied a layer 2 of an insulating varnish to prevent the electrolytic deposit. As Fig. 1 shows, this layer is applied in such a Way as to leave free only a sinuous ribbon surface. Bismuth is electrolytically deposited on that plate, the thickness of the deposit being dened by the time of the electrolysis and the current intensity. Consequently, bismuth only settles on the surface which has not been covered with varnish, and thus forms a continuous ribbon 3 strongly adhering to the copper plate 1 (Fig. 3).
  • the electrolytically deposited side of plate 1 is covered with one or several layers of a varnish 4 which after its hardening constitutes a thin insulating support (Fig. 5).
  • the protecting layer 2 on the back of the copper plate 1 is then removed, and the latter is dissolved by means of a chemical agent or a mixture of chemical agents which do not corrode bismuth or the insulating support.
  • a resistance is thus obtained, which is made of a thin bismuth ribbon strongly adhering to an insulating support and terminated at both ends by a copper contact 6.
  • one or several layers 5 of insulating varnish may also be applied. In this way, the bismuth ribbon is enclosed between two insulating supports.
  • Very thin flat resistances less than 0.1 mm. for instance, may be obtained through this process.
  • the thickness of the bismuth ribbon may be between 0.005 and 0.2 mm., and its Width less than 0.1 mm., thus making possible the manufacture of resistances of several tenths of thousand ohms, whose shape, for instance, is that of a rectangle 2 cm. wide by 5 cm. long.
  • When making a rather thick electrolytic deposit of an almost rectangular shape it is possible to manufacture resistances, the value of which is about 0.1 ohm.
  • deposits consisting of bismuth in combination with other metals may be prepared.
  • the process is suitable for the manufacture of resistances of any shape, and is particularly adapted to obtain resistances of cylindric shape, as the electrolytic deposit may be made on the outer or inner wall of a conducting cylinder which is afterwards dissolved.
  • Fig. 9 shows a completed cylindric resistance.
  • Cylinder 4 formed by the varnish, constitutes the support of the resisting ribbon 3.
  • the ends of this ribbon are made of copper contacts, formed by the undissolved parts of the copper cylinder which was used as metallic support for the electrolytic deposit
  • Fig. 10 is a sectional View according to X-X on Fig. 9 and shows the disposition of one of the copper contacts 6, of the ribbon 3 and support 4 made of polymerizable varnish.
  • Fig. 11 represents a cylindric resistance similar to that represented on Fig. 9, but in which the metallic ribbon is disposed in such a way as to form a biilar winding, thus presenting practically no self-induction,
  • the electrolyuc deposit is easily obtained when the dissolution potential of the metal forming the conducting plate is lower than that of bismuth. If, on the contrary, that metal had a higher dissolution potential than that of bismuth, the surface on which the deposit mustA be made, should be covered with a metal having a lower dissolution potential than bismuth, as, for instance, copper or silver.
  • a variation of this process consists in first depositing the electrolytic layer on a bare metallic'support, then partially removing the deposit by mechanical means (cutter, chisel, tracing machine) or chemical means (for instance, acids) so as to leave on the metallic support only a ribbon of electrolytic deposit of the required shape.
  • the electrolytic deposit may easily be removed, partially by means of a lathe, or any other adequate machine or tool, cutting a thread into the deposit so as to give it the shape of a helicoidal ribbon.
  • the varnish applied on the electrolytic deposit and which becomes later on the support of that deposit is preferably a basic varnish of polymerizable synthetic resin which is then dried in the open air, the polymerization being done at high temperature.
  • the conducting support may also be made with a soluble non-metallic support one part of which at least is metallized.
  • This insulating support might be for instance made of Celluloid, cellulose acetate, polystyrene, and the like.
  • Metallization may also be obtained through various processes, such as spray* metallization, chemical reduction metallization, vacuum evaporation metallization, cathodic deposit metallization, and the like.
  • a housing may be used so that the metallized surface may already have the shape to be given to the electrolytic deposit. Consequentlyit is no longer necessary to varnish the surface on which no electrolytic deposit isfto take place.
  • the deposit is covered with a varnish which will later on form the insulating support of the resistance, then the basic non-metallic support is dissolved by means of an appropriate solvent, like acetone, for instance.
  • the metallic layer which was used to make the support a conducting one, is then dissolved by means of chemical products attacking neither bismuth nor the varnish constituting the support.
  • VThe metallization may'also be made on the entire surface of the insulating support and the desired shape and electrolytic deposit may be vobtained by one of the methods previously indicated, i. e. it is possible to either L apply a protecting varnish on the parts which are not to receive any deposit, or to produce a uniform deposit,
  • Fig. 8 is a diagrammatic cross section of such a resistance during its manufacture. On this figure may be seen the non-metallic support 7, the metallic layer 8 allowing the electrolytic deposit of the layer3 on which a layer of polymerizable varnish 4 is applied.
  • Fig. 7 shows, as aY comparison, a resistance obtained directly by an electrolytic deposit 3 on a copper plate 1.
  • This deposit 3 is covered with a layer of polymerizable varnish 4.
  • any kind of metal on which a suitable electrolytic deposit may be made of the metal to form the resistance can be used to metallize the non-conducting support.
  • metal on which a suitable electrolytic deposit may be made of the metal to form the resistance can be used to metallize the non-conducting support.
  • silver which is deposited by chemical reduction, copper deposited by spraying, and the like can be used to metallize the non-conducting support.
  • bismuth it is advantageous to metallize the non-conducting support with bismuth which may be deposited by vacuum evaporation. In this way, it is no longer necessary to dissolve the metal applied on the support, and it is suicient to dissolve the non-metallic support.
  • a bath giving a very tine-grained electrolytic deposit.
  • a bath enamel for instance, a bath enamel, cellulose, and the like.
  • the insulating support which is to'adhere to the electrolytic deposit, it is obvious that it may be made of any material whatsoever, as for instance, mica, porcelain, However, it is advantageous to choose it among the synthetic plastic materials, such as vinyl, phenolic, acrylic resins, silicone resins, resins based on urea, resins based on styrene, and the like.
  • the bath has a temperature of 40 C. and the time of electrolysis is lS'minutes for a current density of 2 amp/dm. 2.
  • the piece is then rinsed, the protecting varnish removed, and the bismuth surface covered with a layer of Araldite varnish.
  • Araldite varnish designates an epoxy resin sold in commerce.
  • the varnish solvent is evaporated at C. and the polymerization of the Araldite takes place in an oven heated at a temperature of 180 C. during 30 minutes.
  • the dissolution of the copper plate takes an hour at a temperature of 35 C.
  • a method of preparing mechanically stable thin bis muth resistances comprising the steps of passing an electric current through an electrolytic cell containing a solution of a bismuth salt and a cathode having at least partially a metallic conducting surface, said surface being of a metal having a lower dissolution potential than bismuth, removing the cathode from the cell after a bismuth,
  • containing layer of a thickness not exceeding ,2 mm. has been deposited on said metallic cathode surface, coating said layer with a polymerizable resin, curing said resin, and dissolving the metal of the cathode to such an extent as to allow of separating therefrom the bismuth containing layer and the insulating coating as an integral selfsustaining structure, thereby obtaining a bismuth resistance of substantially uniform thickness carried by an insulating support.
  • a method as defined in claim 1 comprising the step of nally applying to the bismuth surface of the obtained resin-bismuth structure an insulating coating so as to obtain a bismuth resistance sandwiched between two supporting insulating layers.
  • a method of preparing mechanically stable thin bismuth resistances comprising the steps of providing an electrolytic cell including a cathode having a conducting surface conforming to the shape of the resistance to be obtained and an electrolyte containing about 40 g./1 of bismuth carbonate, about g./l of 60% perchloric acid, and a protecting colloid, said conducting surface consisting of a metal having a lower dissolution potential than bismuth, passing at a temperature of about 40. C. an electric current through said cell, removing the cathode from the cell after a bismuth layer of a thickness not exceeding 0.2 mm.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Electrolytic Production Of Metals (AREA)
US228573A 1950-07-13 1951-05-28 Process of making bismuth resistances Expired - Lifetime US2712521A (en)

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CH295509T 1950-07-13

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US (1) US2712521A (en))
BE (1) BE504430A (en))
CH (1) CH295509A (en))
DE (1) DE910185C (en))
FR (1) FR1046649A (en))
LU (1) LU30852A1 (en))

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3139392A (en) * 1959-08-10 1964-06-30 Norman B Mears Method of forming precision articles
US3245864A (en) * 1955-04-01 1966-04-12 Shanok Abraham Composite molding strip

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2344940A1 (fr) * 1976-03-18 1977-10-14 Electro Resistance Procede pour la fabrication de resistances electriques a partir d'une feuille metallique fixee sur un support isolant et dispositif s'y rapportant
DE2701373C2 (de) * 1977-01-14 1982-12-23 Dr. Johannes Heidenhain Gmbh, 8225 Traunreut Verfahren zum Herstellen einer Widerstandsschicht von Metallschichtzündmitteln
DE3035717C2 (de) * 1980-09-22 1983-08-25 Siemens AG, 1000 Berlin und 8000 München Verfahren zur serienmäßigen Herstellung von Folienwiderständen oder Netzwerken von Folienwiderständen
DE3631058A1 (de) * 1986-09-12 1988-03-24 Preh Elektro Feinmechanik Verfahren zur herstellung von leit- und/oder widerstandsbahnen an einem substrat und nach diesem verfahren hergestelltes potentiometer
DE19732380B4 (de) * 1997-07-25 2005-04-14 Conti Temic Microelectronic Gmbh Anzündelement für pyrotechnische Wirkmassen mit einer Dämmschicht

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1352934A (en) * 1919-10-17 1920-09-14 Elek Sk Varmeteknik As Electric-heating body
US1892755A (en) * 1929-05-25 1933-01-03 Lorenz C Ag Method of making electrical condensers
US1974763A (en) * 1934-09-25 Process fob the production of boll-
US2133685A (en) * 1935-03-11 1938-10-18 Frank R Coughlin Method of removing metallic plating from a carrier band
US2328626A (en) * 1939-08-19 1943-09-07 Union Switch & Signal Co Manufacture of electrical rectifiers
US2441960A (en) * 1943-02-02 1948-05-25 Eisler Paul Manufacture of electric circuit components
US2501322A (en) * 1946-11-07 1950-03-21 Westinghouse Electric Corp Moisture-resistant lightning arrester valve block
US2521894A (en) * 1950-02-08 1950-09-12 Robert J S Brown Low inductance resistor
US2564677A (en) * 1947-09-15 1951-08-21 Corning Glass Works Electrically conducting coating on glass and other ceramic bodies

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1974763A (en) * 1934-09-25 Process fob the production of boll-
US1352934A (en) * 1919-10-17 1920-09-14 Elek Sk Varmeteknik As Electric-heating body
US1892755A (en) * 1929-05-25 1933-01-03 Lorenz C Ag Method of making electrical condensers
US2133685A (en) * 1935-03-11 1938-10-18 Frank R Coughlin Method of removing metallic plating from a carrier band
US2328626A (en) * 1939-08-19 1943-09-07 Union Switch & Signal Co Manufacture of electrical rectifiers
US2441960A (en) * 1943-02-02 1948-05-25 Eisler Paul Manufacture of electric circuit components
US2501322A (en) * 1946-11-07 1950-03-21 Westinghouse Electric Corp Moisture-resistant lightning arrester valve block
US2564677A (en) * 1947-09-15 1951-08-21 Corning Glass Works Electrically conducting coating on glass and other ceramic bodies
US2521894A (en) * 1950-02-08 1950-09-12 Robert J S Brown Low inductance resistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3245864A (en) * 1955-04-01 1966-04-12 Shanok Abraham Composite molding strip
US3139392A (en) * 1959-08-10 1964-06-30 Norman B Mears Method of forming precision articles

Also Published As

Publication number Publication date
CH295509A (fr) 1953-12-31
BE504430A (en)) 1952-11-07
FR1046649A (fr) 1953-12-08
LU30852A1 (en)) 1952-03-19
DE910185C (de) 1954-04-29

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