US2457169A - Method of manufacturing of rectifier elements - Google Patents

Method of manufacturing of rectifier elements Download PDF

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Publication number
US2457169A
US2457169A US582278A US58227845A US2457169A US 2457169 A US2457169 A US 2457169A US 582278 A US582278 A US 582278A US 58227845 A US58227845 A US 58227845A US 2457169 A US2457169 A US 2457169A
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US
United States
Prior art keywords
selenium
heat treatment
treatment
manufacturing
vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US582278A
Other languages
English (en)
Inventor
Arthur J Miller
Julius W Fleisher
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Federal Telephone and Radio Corp
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to BE468183D priority Critical patent/BE468183A/xx
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to US582278A priority patent/US2457169A/en
Priority to GB3986/46A priority patent/GB616812A/en
Priority to FR923723D priority patent/FR923723A/fr
Priority to ES173252A priority patent/ES173252A1/es
Priority to CH259588D priority patent/CH259588A/de
Application granted granted Critical
Publication of US2457169A publication Critical patent/US2457169A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H10D48/045—Treatment of the surface of the selenium or tellurium layer after having been made conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H10D48/044—Conversion of the selenium or tellurium to the conductive state
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/048—Treatment of the complete device, e.g. by electroforming to form a barrier
    • H10D48/049—Ageing

Definitions

  • a coating of selenium-is provided on a base plate and the selenium layer is annealed by heat treatment to crystallize the selenium.
  • This annealing process is ordinarily done in two heat treatment steps: the first step involves heating the selenium to 120 C. under pressure for about one-half hour; and the second step involves heating without pressure for several hours at a higher temperature just under the melting point of selenium, for example, about 214 C.
  • a treatment is then usually given the selenium with selenium dioxide vapor or selenium vapor after which a conducting counter-electrode is sprayed over the selenium surface.
  • the final treatment .of the selenium with selenium vapor is preferable to the treatment with selenium dioxide vapor since the first mentioned treatment provides a better blocking layer than the later mentioned one.
  • the a blocking layer thus achieved was still not yet satisfactory and according to the method of the present invention it is possible to provide a still more improved blocking layer.
  • Figure '1 shows a diagram of heat treatment temperature against blocking ability and electroforming rate
  • Fig. 2 shows a diagram of heat treatment temperature against forward conductivity
  • Fig. 3 shows. by example only, anapparatus which can'be used to perform the method according to the present invention. It is emphasized, however, that the apparatus per se as shown cannot be considered as limitation of the present invention.
  • a plurality of base finally through another oven '5,'to be exposed to the third heat treatment.
  • the oven 5 is heated up for example by sheeting solid and pipes (not shown) can be inserted into the oven chamber.
  • a selenium rectifier element comprising a base plate having a selenium layer, said layer having been exposed to a first heat treatment at about 120 C. under pressure. a second heat treatment without pressure at a higher temperature I then that applied in the first heat treatment yet below the. meltingpoint of selenium and a momentary third heat treatment, the third heat treatment being at a temperature range between 900 and ate 0..” the selenium layer being cooled between the first and'second heat treatments and between the second and third heat treatments.
  • a selenium rectifier element comprising a base plate having a selenium layer, said layer the conveyorto third heat treat the discs after applying a second heat treatment without pres-' sure at a higher temperature than that applied in the first heat treatment yet below the melting point of the selenium, and after cooling the selesnd appended nium to about room temperature applying e. mo-

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
US582278A 1945-03-12 1945-03-12 Method of manufacturing of rectifier elements Expired - Lifetime US2457169A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
BE468183D BE468183A (en:Method) 1945-03-12
US582278A US2457169A (en) 1945-03-12 1945-03-12 Method of manufacturing of rectifier elements
GB3986/46A GB616812A (en) 1945-03-12 1946-02-08 Method of manufacture of selenium rectifier elements
FR923723D FR923723A (fr) 1945-03-12 1946-03-11 Procédés de fabrication d'éléments redresseurs et analogues
ES173252A ES173252A1 (es) 1945-03-12 1946-04-17 Mejoras en los métodos de fabricación de elementos rectificadores
CH259588D CH259588A (de) 1945-03-12 1946-04-30 Verfahren zur Herstellung von Selengleichrichterelementen.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US582278A US2457169A (en) 1945-03-12 1945-03-12 Method of manufacturing of rectifier elements

Publications (1)

Publication Number Publication Date
US2457169A true US2457169A (en) 1948-12-28

Family

ID=24328521

Family Applications (1)

Application Number Title Priority Date Filing Date
US582278A Expired - Lifetime US2457169A (en) 1945-03-12 1945-03-12 Method of manufacturing of rectifier elements

Country Status (6)

Country Link
US (1) US2457169A (en:Method)
BE (1) BE468183A (en:Method)
CH (1) CH259588A (en:Method)
ES (1) ES173252A1 (en:Method)
FR (1) FR923723A (en:Method)
GB (1) GB616812A (en:Method)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2885309A (en) * 1949-10-31 1959-05-05 Licentia Gmbh Method of tempering selenium layers for selenium rectifiers and product

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL111901C (en:Method) * 1950-09-12 1900-01-01
DE1035783B (de) * 1953-08-13 1958-08-07 Siemens Ag Verfahren zur Herstellung von Trockengleichrichterelementen
DE1041598B (de) * 1953-08-24 1958-10-23 Siemens Ag Verfahren zur Fertigung von Selengleichrichtern
DE976389C (de) * 1954-07-29 1963-08-22 Siemens Ag Verfahren zum elektrischen Formieren von Trockengleichrichterplatten, insbesondere Selengleichrichterplatten

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1743160A (en) * 1927-12-10 1930-01-14 Suddeutsche Telefonapp Kabel U Method of manufacturing alternating-current rectifiers
US2193610A (en) * 1938-02-17 1940-03-12 Westinghouse Electric & Mfg Co Selenium contact electrode
US2215999A (en) * 1936-06-13 1940-09-24 Gen Electric Selenium rectifier having an insulating layer
US2226716A (en) * 1938-07-14 1940-12-31 Suddeutsche App Fabrik G M B H Photoelectric cell
US2279187A (en) * 1939-01-11 1942-04-07 Union Switch & Signal Co Alternating electric current rectifier of the selenium type
US2356094A (en) * 1943-02-11 1944-08-15 Fed Telephone & Radio Corp Method of treating selenium elements
US2363555A (en) * 1943-08-21 1944-11-28 Standard Telephones Cables Ltd Method of producing selenium rectifiers
US2395259A (en) * 1942-10-24 1946-02-19 Bell Telephone Labor Inc Method of making dry rectifiers

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1743160A (en) * 1927-12-10 1930-01-14 Suddeutsche Telefonapp Kabel U Method of manufacturing alternating-current rectifiers
US2215999A (en) * 1936-06-13 1940-09-24 Gen Electric Selenium rectifier having an insulating layer
US2193610A (en) * 1938-02-17 1940-03-12 Westinghouse Electric & Mfg Co Selenium contact electrode
US2226716A (en) * 1938-07-14 1940-12-31 Suddeutsche App Fabrik G M B H Photoelectric cell
US2279187A (en) * 1939-01-11 1942-04-07 Union Switch & Signal Co Alternating electric current rectifier of the selenium type
US2395259A (en) * 1942-10-24 1946-02-19 Bell Telephone Labor Inc Method of making dry rectifiers
US2356094A (en) * 1943-02-11 1944-08-15 Fed Telephone & Radio Corp Method of treating selenium elements
US2363555A (en) * 1943-08-21 1944-11-28 Standard Telephones Cables Ltd Method of producing selenium rectifiers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2885309A (en) * 1949-10-31 1959-05-05 Licentia Gmbh Method of tempering selenium layers for selenium rectifiers and product

Also Published As

Publication number Publication date
ES173252A1 (es) 1946-05-16
BE468183A (en:Method) 1900-01-01
CH259588A (de) 1949-01-31
GB616812A (en) 1949-01-27
FR923723A (fr) 1947-07-16

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