US2441590A - Translating device - Google Patents

Translating device Download PDF

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Publication number
US2441590A
US2441590A US528009A US52800944A US2441590A US 2441590 A US2441590 A US 2441590A US 528009 A US528009 A US 528009A US 52800944 A US52800944 A US 52800944A US 2441590 A US2441590 A US 2441590A
Authority
US
United States
Prior art keywords
contact
wire
cylinder
tube
electrical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US528009A
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English (en)
Inventor
Russell S Ohl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Bell Telephone Laboratories Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bell Telephone Laboratories Inc filed Critical Bell Telephone Laboratories Inc
Priority to US528009A priority Critical patent/US2441590A/en
Priority to GB23834/45A priority patent/GB599341A/en
Priority to FR940633D priority patent/FR940633A/fr
Priority to NL127980A priority patent/NL73352C/xx
Application granted granted Critical
Publication of US2441590A publication Critical patent/US2441590A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • Thisinvention relates devices and particularly todevices of this kind having small areas of contact between different materials.
  • the objects of theinvention are to reduce the contact area of electrical translatingdevices; to maintain a high degree of contact stability; to shield and safeguard the delicate parts from injuryor'impa-irment;toimprove the uniformity of the electric circuits'in which they are used; to simplify the structure; and to secure other improvements in these devices and in methods of making them.
  • afi-ne tungsten wire is. mounted so that its free end engages the surface of an element having suitable rectifying properties, such as a crystal of silicon.
  • rectifiers of this kind have been made by grinding one end of a fine tungsten Wire (.005 inch in diameter) to a point, carefully assembling the elements to bring the ground point into resilient contact with the surface of the crystal so as-to flatten the pointed end of the wire until the contact engagement between the Wire and the :crystal surfaceibecomes a small finite'area.
  • the device in one of its forms comprises a rectifying crystal of silicon in the shape of a wedge, the apex edge of which is a sharply defined line, and a metallic contact ele-' ment of extremely fine wire of tungsten or other suitable material suspended under tension across the prongs of a bow member, these parts being so assembled in the structure that the tensioned contact Wire engages the apex line of the wedge to form a stable rectifying contact of extremely small dimensions.
  • the desired small stable contact area is attained by using a short length of fine wire with its free end ground at right angles to its length to present a normal cross-sectional circular area and bending the wire in a single loop so that only a small arc of the circumference at the free tip end of the wire bears on the surface of the rectifying crystal.
  • the short loop thus formed in the contact Wire gives it some resiliency; yet it also affords a maxi.- mum of pressure on the contact point notwithstanding the extreme fineness of the Wire itself.
  • the invention is a method of preparing the crystal rectifying elements which comprises cutting small rectangular slabs from a fused ingot,- grinding one surface of each slab to the shape of a wedge having a predetermined apex angle, and polishing the ground surfaces of the element until the ridge or apex of the wedge is a thin uniform line.
  • Fig. 1 illustrates a block of fused silicon having a high degree of purity
  • Fig. 2 is a small slab or wafer cut from the block of Fig. 1;
  • Figs. 3 and 4 are cross-sectional and plan views in engagement with a crystal.
  • Fig. 9 shows a pronged member or bridge for supporting the contact wire
  • Fig. 10 is a perspective view showing the assembly of the bridge member and ceramic insulating element
  • Fig. 11 is a cross-sectional view of the assembly of one form of the translating device
  • Fig. 12 is an assembly of another form of the.
  • Figs. 13. 14, and 15 are enlarged details of the contact elements of the modification of Fig. 12, and
  • Fig. 16 is a mechanism for performing the assembling operations.
  • Satisfactory rectifiers for use with waves of 10 centimeters or more have been made by bending or shaping the fine tungsten wire (.005 inch diameter) in a plurality of loops to give it more resilience and by fixing it with the pointed end
  • the area of the rectifying contact thus formed is too large for best results with wave-lengths in the neighborhood of 1 centimeter. If the size of the contact wire is reduced in an eifort to decrease the contact area, the unit becomes unstable because of the consequent reduction in the pressure which the resilient contact wire is capable of exerting against the surface of the crystal.
  • the bends introduced in the contact wire to obta n the desired spring pressure at the contact surface are also the source of substantial electrical inductance particularly at the high frequencies to which these devices are subjected.
  • this desirable end is achieved with the use of a straight contact wire wh ch adds substantially no inductance to the electrical circuit of which it is a part.
  • a short contact wire having a single loop therein and shaping the tip of the free end so that only a small part of its area engages the surface of the crystal.
  • the component parts of these rectifiers are mounted and housed within a metal tube which shields the contact point against extraneous electrical influences and protects it against static discharges from neighboring objects, particularly while it is being handled.
  • the first step in the manufacture of the rectifier herein disclosed is the preparation of an ingot of silicon having a high degree of purity.
  • One method by which the silicon material may be prepared is disclosed in the application of J. H. Scafi, Serial ,No. 386,835, filed April 4, 1941, issued as Patent 2,402,582, June 25, 1946.
  • a block I of desired dimensions and also of desired electrical characteristics is shaped from the ingot.
  • the top surface of a slab, cut from the block I is plated with nickel or any other suitable metal, following which wafers 2 are cut to the proper dimensions from the slab, a diamond saw being used for this purpose.
  • the dimensions of the wafer 2 may vary to suit requirements, good results have been obtained when the large surface of the wafer is a square inch on the side and the thickness of the wafer is inch.
  • the next step in the process is to grind the wafers 2 into the shape of a wedge as illustrated in Fig. '7.
  • a plurality of ,7 these wafers are cemented into notches formed in the surface of a chuck 3. These notches are cut in two or more concentric rows, and the angles which they make with the surface of the chuck determines the apex angle of thefim'shed silicon wedge. Although these angles may vary as desired, the notches illustrated in the drawing are cut at 30 degrees and 60 degrees.
  • the rectangular wafers are cemented into these notches by means of any suitable adhesive material such as shellac, care being taken to fix the wafers in the notches with the nickelplated surfaces down, thus exposing the unplated surfaces to the grinding action.
  • the chuck 3 is associated with the driving shaft 4 (Fig. 5) and immersed in a grinding bath 5 to bring the silicon wafers 2 into contact with the grinding lap 6.
  • the lap 6, which may be of any suitable metal contains a series of grooves and rests on the bottom of the cup I with which it is rotated by the driving shaft 8.
  • the lap 6 is charged with suitable abrasive materials, such as boron carbide, for cutting away sections of the silicon wafers.
  • the mechanism is designed to rotate the lap 6 and the chuck 3 in the same direction but at different speeds and is also designed to impart an oscillatory movement to the chuck 3 While it is being rotated.
  • a section 9 of each wafer 2 is cut away at the predetermined angle as illustrated in Fig. 6.
  • the grinding lap 6 is replaced by one charged with a polishing abrasive, such as sappharine, and a polishing bath is placed in the cup 1.
  • a polishing abrasive such as sappharine
  • the polishing operation now proceeds until the first roughed surfaces of the Wafes are brought to a high optical finish.
  • the wafers are removed from the chuck 3 and again cemented thereto in the reverse position.
  • the second part of the grinding operation is then performed, during which a similar section is cut away on the opposite side of each wafer giving it the desired wedge shape as illustrated in Fig. '7.
  • the polishing operation is repeated on the opposite roughed surfaces of the wafers.
  • each one of the wedges I 0 is soldered to a brass mounting base or plug 13, the nickel-plated surface of the wedge serving to facilitate the soldered joint.
  • the spring wire contact unit of the rectifier shown in Fig. 10, comprises a metallic bow or bridge member I 5 mounted in a cylinder 20 which may be of ceramic or other insulating material, and supporting a fine wire 14 of tungsten. or
  • SI-ltie router shell 01 housing :of the irectifier fis made :from a section of :metall-ic -tubing of coin "silver ioriother suitable :metal. .Aiter being "cut to the proper length, :the housing tube :22..is drilled to :a plurality :of graduated tinternal :diame'ters as illustrated :in iFig. 2.11 of :the drawing.
  • the severalparts-"ofthe Titantifier are-assembled by :means of ithe hydraulic press mechanism illustrated iinEig. 1'6.
  • the .fir-stgtepin the assembly isitoforce thezceramic unitzshownzin Fig. 10 'into its vpredetermined iPOSitiOn within the cylinder 22.
  • the cylinder T222 withz its large opening downward is slipped :into the slotted :receptacle 23 until it #is :seated :against ithe bottom of theopenin'g in "the insulatin :bar 2 1 "where it is held :by the resilience :of ithe receptacle.
  • the ceramic unit is placedzon the cup 25 with the b'ow member k5 extending upwardly :and with the ceramic cylinder disposed concentrically-with respect to the large opening :in the bottom of the cylinder to fierce-the ceramic cylinder 20 with a tig ht fit into a predetermined position :in the intermediate section oft-he tube '22.
  • Cine convenient way' o'f determining the correct position of the ceramic cylinder within the housing tube $2 is to proportion the parts in such :a nnanner that the movable support 26 'in .its upward movement reaches the bottom end or the tube when the ceramic cylinder .20 advances to desired predetermined 330511531711 within the tube.
  • Elhe fjack is now released -andthe second step in the assembly is then performed.
  • the tube 22 is withdrawn lrom the receptacle .23,-*turned end for end and again inserted in the receptacle.
  • slips into the :sl'otted slack 21 as the corresponding end of the tube .22 .comes 'to .rest against the bottom of the opening in the bar 24.
  • the purpose of engaging the cap 2! with the jack 21 is to obtain an electrical connection between the contact wire 14 and an external circuit to facilitate the assembling.
  • brass plug 13 is placed on the cup in such a manner that the apex line 28 of the silicon wedge 10 is accurately disposed at eight 'angles to the :contact wire 44.
  • the :cylinder :3! may ibermade either of "steel .01" of beryllium copper. When steel is used, the cylinder may be giuen'ia lthin coat of tin. *If berryllium copper is used,-.the .cylinder maybe left unplated or it may herniated with'gold.
  • the .l'crystal unit comprises a solid cylinder -32 of brass, "plated with tin :if desired, to which a polished silicon water 361 isaffi-xed.
  • the wafers 3-3 ior thisatype of rectifier may be cut from the block 4, preferably to a thickness of :about 6 inch. Since, 'however, the contact-surface of the wafer is a plane and parallel to the base, the polishing operation is accomplished by cementing the wafers to a :chuck, similar to the chuck 3, but @having a plane surface. Thereupon the chuck, having a plurality of these wafers cemented to the 'suriace' thereof, is introduced in the :polishing bath 5, and the wafers are polished to :a high finish :on the lap 6.
  • the :spring wire contact unit of the rectifier comprises a metallic pin 84 preferably of nickel, an insulating cylinder 35 and a short length of tungsten :contact 'wire 36.
  • a section of the pin 34 is reduced in diameterand threaded or corrugated, and the insulating :cylinder 35 is then molded around this section of the pin.
  • the contact wire 36 which is of pure tungsten, is about .002 of an inch in diameter, and the contact -end-thereof is ground to a plane circular surface :normal to the aXis of the wire.
  • the crystal supporting cylinder 32 and'the contact *wire assembly, including the insulatin cylinder -35, are driven into opposite ends of the housingv tube 1 where they are held by aforcefit securelyin ltheirlrequired positions.
  • These elements maybe assembled in the housing tube 3

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Elimination Of Static Electricity (AREA)
US528009A 1944-03-24 1944-03-24 Translating device Expired - Lifetime US2441590A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US528009A US2441590A (en) 1944-03-24 1944-03-24 Translating device
GB23834/45A GB599341A (en) 1944-03-24 1945-09-14 Improvements in electrical translating devices such as contact rectifiers
FR940633D FR940633A (fr) 1944-03-24 1946-08-27 Dispositif de transformation électrique
NL127980A NL73352C (enrdf_load_stackoverflow) 1944-03-24 1946-10-02

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US528009A US2441590A (en) 1944-03-24 1944-03-24 Translating device

Publications (1)

Publication Number Publication Date
US2441590A true US2441590A (en) 1948-05-18

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ID=24103887

Family Applications (1)

Application Number Title Priority Date Filing Date
US528009A Expired - Lifetime US2441590A (en) 1944-03-24 1944-03-24 Translating device

Country Status (4)

Country Link
US (1) US2441590A (enrdf_load_stackoverflow)
FR (1) FR940633A (enrdf_load_stackoverflow)
GB (1) GB599341A (enrdf_load_stackoverflow)
NL (1) NL73352C (enrdf_load_stackoverflow)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2675509A (en) * 1949-07-26 1954-04-13 Rca Corp High-frequency response semiconductor device
US2704818A (en) * 1947-04-24 1955-03-22 Gen Electric Asymmetrically conductive device
US2708255A (en) * 1949-06-18 1955-05-10 Albert C Nolte Minute metallic bodies
DE936758C (de) * 1949-11-15 1955-12-22 Rudolf Dr-Ing Rost Kristall-Polyode
US2829992A (en) * 1954-02-02 1958-04-08 Hughes Aircraft Co Fused junction semiconductor devices and method of making same
US2861228A (en) * 1953-05-29 1958-11-18 Motorola Inc Semi-conductor unit
US3078559A (en) * 1959-04-13 1963-02-26 Sylvania Electric Prod Method for preparing semiconductor elements
US3120087A (en) * 1962-12-28 1964-02-04 Robert H Holloway Method of mounting metallographic samples
US3187403A (en) * 1962-04-24 1965-06-08 Burroughs Corp Method of making semiconductor circuit elements
US3763611A (en) * 1970-02-23 1973-10-09 Struers Chemiske Labor H Method of preparing a test sample of material for grinding or polishing
US4198788A (en) * 1978-07-28 1980-04-22 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of forming a sharp edge on an optical device

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2615965A (en) * 1948-07-24 1952-10-28 Sylvania Electric Prod Crystal amplifier device
US2597734A (en) * 1948-11-15 1952-05-20 Hazeltine Research Inc Electrical crystal contact device
US2734102A (en) * 1949-03-31 1956-02-07 Jacques i
US2609427A (en) * 1949-05-31 1952-09-02 Rca Corp Three-electrode semiconductor device
NL154199C (enrdf_load_stackoverflow) * 1949-06-14
NL251301A (enrdf_load_stackoverflow) * 1959-05-06 1900-01-01

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE283186C (enrdf_load_stackoverflow) *
US1102184A (en) * 1907-08-15 1914-06-30 Browne Apparatus Company Detector for wireless telegraphy.

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE283186C (enrdf_load_stackoverflow) *
US1102184A (en) * 1907-08-15 1914-06-30 Browne Apparatus Company Detector for wireless telegraphy.

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2704818A (en) * 1947-04-24 1955-03-22 Gen Electric Asymmetrically conductive device
US2708255A (en) * 1949-06-18 1955-05-10 Albert C Nolte Minute metallic bodies
US2675509A (en) * 1949-07-26 1954-04-13 Rca Corp High-frequency response semiconductor device
DE936758C (de) * 1949-11-15 1955-12-22 Rudolf Dr-Ing Rost Kristall-Polyode
US2861228A (en) * 1953-05-29 1958-11-18 Motorola Inc Semi-conductor unit
US2829992A (en) * 1954-02-02 1958-04-08 Hughes Aircraft Co Fused junction semiconductor devices and method of making same
US3078559A (en) * 1959-04-13 1963-02-26 Sylvania Electric Prod Method for preparing semiconductor elements
US3187403A (en) * 1962-04-24 1965-06-08 Burroughs Corp Method of making semiconductor circuit elements
US3120087A (en) * 1962-12-28 1964-02-04 Robert H Holloway Method of mounting metallographic samples
US3763611A (en) * 1970-02-23 1973-10-09 Struers Chemiske Labor H Method of preparing a test sample of material for grinding or polishing
US4198788A (en) * 1978-07-28 1980-04-22 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of forming a sharp edge on an optical device

Also Published As

Publication number Publication date
NL73352C (enrdf_load_stackoverflow) 1953-10-15
FR940633A (fr) 1948-12-17
GB599341A (en) 1948-03-10

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