US2328440A - Blocking layer cell - Google Patents

Blocking layer cell Download PDF

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Publication number
US2328440A
US2328440A US400852A US40085241A US2328440A US 2328440 A US2328440 A US 2328440A US 400852 A US400852 A US 400852A US 40085241 A US40085241 A US 40085241A US 2328440 A US2328440 A US 2328440A
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US
United States
Prior art keywords
layer
blocking
blocking layer
layer cell
grid
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US400852A
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English (en)
Inventor
Esselin Ludovicus Au Lambertus
Willem Christiaan Van Geel
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Individual
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Individual
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Publication of US2328440A publication Critical patent/US2328440A/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/07—Manufacture or treatment of devices having bodies comprising cuprous oxide [Cu2O] or cuprous iodide [CuI]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H10D48/046—Provision of discrete insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Definitions

  • the invention relates to a blocking-layer cell comprising a non-genetic blocking layer in which one or more grids are embedded.
  • a non-genetic layer is meant a layer of electrically insulating material having such a thickness value that electrons can permeate therethrough substantially unimpeded. to obtain an electric field of sufficient strength between the two main electrodes, it is necessary that the relative spacing between them should be very small, of the order of a few microns.
  • the grid or grids and the blocking layer consisting of a plurality of films must each have therefore a very slight thickness. This requirement makes it difficult to apply to one of the electrodes the various insulating films constituting the blocking layer.
  • the first iilm which consists of a determined insulating material such as' polystyrene, shellac, Canada balsam or chlorinated rubber lacquer, may be applied from a solution in a determined medium, whereupon for the application of the following insulating film use is made of another insulating material which is soluble in another medium.
  • a determined insulating material such as' polystyrene, shellac, Canada balsam or chlorinated rubber lacquer
  • a blocking layer cell In the production of a blocking layer cell the starting point is formed by a supporting plate I of aluminium on which an anode 2 consisting of selenium is provided.
  • a lm 3 which, jointly with a film 4, forms the blocking layer in which a grid 5 is embedded, polystyrene dissolved in benzene is spread out or sprayed on the electrode 2.
  • a pre-determined thickness of the layer 3 By dosing the solution and starting from a determined concentration a pre-determined thickness of the layer 3 may be obtained. This thickness ranges in general from 1 to 5 microns.
  • the grid 5 is provided on the film 3 by applying thereon by vaporisation a thin layer of copper having a thickness of about 0.1 micron, which layer is exposed to the action of iodine vapour so that a conducting layer of cuprous iodide of rather bad electro-n-emissivity is produced. Owing to its slight thickness this layer is so porous that electrons can readily pass through it.
  • a strip G of copper of a thickness of about 1 micron which serves to connect the grid to an external circuit.
  • the second film of insulating material To the grid is applied the second film of insulating material, use being made of a material which is soluble in a liquid in which the material of the layer 3 does not dissolve.
  • a suitable material is, for example, shellac which dissolves in alcohol and ketones.
  • Other materials suitable for producing films are the following: Canada balsam, which is soluble in turpentine, or chlorinated rubber lacquer which is soluble in xylene, acetone and toluene, phenol-formaldehyde condensation products which dissolve in alcohol, or again a plasticized phenol resin soluble in benzene hydro-carbides.
  • This resin may be obtained by condensation of a phenol alcohol with a mono-alcohol and is heated for some time, for example with wood oil, said resin being dissolved I therefoe im 'Ehe above-mentioned pumas@ e '131e sf Biloxi lem he eheve-mentiomed me,-
  • een comprsmg anode and cathode elecbodes e, mon-genetic blocking-layer in'iaexposenl between seid elec'sledes and a gid e eeuode inepesed between seid eectrodes and esseesee embedded m seid beckngnlsyer, ssl-id blockingcompsm a pluaty of supeposeo .films il 'beekmgdaye eej comprising anode and 'T @de eeezbedc-s, e, momwenezic bloekmgdayer meeeosed between seid electrodes, and .e gzfd LUDoweUs eUGUsmUs lem/@memes EseeLmG. WMM eermsmm wm GEEL.

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  • Agricultural Chemicals And Associated Chemicals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
US400852A 1940-07-03 1941-07-02 Blocking layer cell Expired - Lifetime US2328440A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL229960X 1940-07-03

Publications (1)

Publication Number Publication Date
US2328440A true US2328440A (en) 1943-08-31

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ID=19779877

Family Applications (1)

Application Number Title Priority Date Filing Date
US400852A Expired - Lifetime US2328440A (en) 1940-07-03 1941-07-02 Blocking layer cell

Country Status (5)

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US (1) US2328440A (en(2012))
BE (1) BE442069A (en(2012))
CH (1) CH229960A (en(2012))
GB (1) GB603940A (en(2012))
NL (1) NL60402C (en(2012))

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2428400A (en) * 1940-08-02 1947-10-07 Hartford Nat Bank & Trust Co Blocking-layer cells comprising one or more grids embedded in the blocking layer
US2446465A (en) * 1944-11-11 1948-08-03 Selenium rectifier
US2452603A (en) * 1944-04-08 1948-11-02 Standard Telephones Cables Ltd Metal contact rectifier
US2456758A (en) * 1941-04-21 1948-12-21 Hartford Nat Bank & Trust Co Blocking-layer electrode system
US2465768A (en) * 1941-06-26 1949-03-29 Hartford Nat Bank & Trust Co Blocking-layer cell
US2510361A (en) * 1944-04-06 1950-06-06 Hartford Nat Bank & Trust Co Method of producing selenium rectifiers
US2569347A (en) * 1948-06-26 1951-09-25 Bell Telephone Labor Inc Circuit element utilizing semiconductive material
US2585014A (en) * 1942-07-02 1952-02-12 Standard Telephones Cables Ltd High-voltage rectifier disk
US2607832A (en) * 1947-07-19 1952-08-19 Vickers Inc Devices which have selenium as constituent parts thereof
US2673948A (en) * 1948-08-13 1954-03-30 Westinghouse Freins & Signaux Crystal device for controlling electric currents by means of a solid semiconductor
US2681993A (en) * 1948-06-26 1954-06-22 Bell Telephone Labor Inc Circuit element utilizing semiconductive materials
US2689191A (en) * 1948-12-10 1954-09-14 Rca Corp Formation of reflecting coatings
US3153154A (en) * 1962-02-13 1964-10-13 James J Murray Grid controlled transistor device
US3204159A (en) * 1960-09-14 1965-08-31 Bramley Jenny Rectifying majority carrier device
US3250967A (en) * 1961-12-22 1966-05-10 Rca Corp Solid state triode
US3515629A (en) * 1966-09-30 1970-06-02 Raytheon Co Electrical device having intermediate dielectric layer

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2428400A (en) * 1940-08-02 1947-10-07 Hartford Nat Bank & Trust Co Blocking-layer cells comprising one or more grids embedded in the blocking layer
US2456758A (en) * 1941-04-21 1948-12-21 Hartford Nat Bank & Trust Co Blocking-layer electrode system
US2465768A (en) * 1941-06-26 1949-03-29 Hartford Nat Bank & Trust Co Blocking-layer cell
US2585014A (en) * 1942-07-02 1952-02-12 Standard Telephones Cables Ltd High-voltage rectifier disk
US2510361A (en) * 1944-04-06 1950-06-06 Hartford Nat Bank & Trust Co Method of producing selenium rectifiers
US2452603A (en) * 1944-04-08 1948-11-02 Standard Telephones Cables Ltd Metal contact rectifier
US2446465A (en) * 1944-11-11 1948-08-03 Selenium rectifier
US2607832A (en) * 1947-07-19 1952-08-19 Vickers Inc Devices which have selenium as constituent parts thereof
US2569347A (en) * 1948-06-26 1951-09-25 Bell Telephone Labor Inc Circuit element utilizing semiconductive material
US2681993A (en) * 1948-06-26 1954-06-22 Bell Telephone Labor Inc Circuit element utilizing semiconductive materials
US2673948A (en) * 1948-08-13 1954-03-30 Westinghouse Freins & Signaux Crystal device for controlling electric currents by means of a solid semiconductor
US2689191A (en) * 1948-12-10 1954-09-14 Rca Corp Formation of reflecting coatings
US3204159A (en) * 1960-09-14 1965-08-31 Bramley Jenny Rectifying majority carrier device
US3250967A (en) * 1961-12-22 1966-05-10 Rca Corp Solid state triode
US3153154A (en) * 1962-02-13 1964-10-13 James J Murray Grid controlled transistor device
US3515629A (en) * 1966-09-30 1970-06-02 Raytheon Co Electrical device having intermediate dielectric layer

Also Published As

Publication number Publication date
BE442069A (en(2012))
CH229960A (de) 1943-11-30
GB603940A (en) 1948-06-25
NL60402C (en(2012))

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