US2276198A - Photocell - Google Patents

Photocell Download PDF

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Publication number
US2276198A
US2276198A US294510A US29451039A US2276198A US 2276198 A US2276198 A US 2276198A US 294510 A US294510 A US 294510A US 29451039 A US29451039 A US 29451039A US 2276198 A US2276198 A US 2276198A
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United States
Prior art keywords
photocell
conductor
thin film
selenium
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US294510A
Inventor
Kamayachi Zen-Ichi
Ishii Kenichi
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International Standard Electric Corp
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International Standard Electric Corp
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Publication date
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Publication of US2276198A publication Critical patent/US2276198A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/12Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate

Definitions

  • This invention relates to a photocell which-is formed by applying a selenium semi-conductor.
  • the drawing is a view showing the construction of a sensitive element in the photocell of this invention.
  • This invention is related to the improvement of a photocell using a selenium semi-conductor.
  • a photocell of this type practiced heretofore,
  • Reference numeral 3 shows a thin film in which one or several kinds of a fourth-group selenium by a spraying or distillation method.
  • Reference numeral 4 is a platinum or silver coating. It is necessary that the thin films composed of the layers (3) .(4) are of suitable thickv ness so as" to allow a large amount of light to We produce a photocell by first applying a thin film of a fourth-group metal such as a tin etc.-
  • Reference numeral I shows a base-electrode
  • I usually an iron plate thesurface of which is made mechanically coarse. If required, I may be provided with a plating of nickel, cobalt etc.
  • Reference numeral 2 shows a layer of selenium semi-conductor formed by heating a'base iron plate to a given temperature'for a fixed time prior to its application, by having a molten sele-" nium applied or sprayed thereto and still more by heating it at a normal temperature for a fixed get to the selenium semi-conductor.
  • the sensitive element is then mounted by pressing elec trodes consisting of a copper ring etc. against the upper electrode and the base electrode, re-
  • a glass plate or transparent lacqu'er etc. is provided for the purpose of the mechanical as well as the chemical protection of the sensitive element.
  • a photocell which'comprises a base electrode plate, a coating of aselenium semi-conductor thereon, a thin film of at least one of the metals belonging only to the fourth group of the periodic table of elements on the exposed surface of said selenium. semi-conductor coating, and a transparent film of a substantially chemically inert metal coated on the exposed surface of said thin film.
  • connection with tin and leadas possible fourth group metals for the layer 3, others may beemployed, such as titanium, germanium, zirconium, cerium, silicon,

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Description

ZEN-[CHI KAMAYACH! ET AL 2,276,198
March 10, 1942.
PHOTOGELL Filed Sept. 12, 1939 6761 I C O/VDUC 771 5 M55444 /C MVEE SELE/V/UM 1-H YER 5 5/755 ELECTRODE 4,975? or MEI-AL FROM 77/5 Fall/2771' PE/F/Ofl/C GROUP ATTORNEY i Patented Mar. 1942 PHOTOCELL Zen-Ichi Kamayaclii and Kenichi Ishii, ,Shibaku,
Tokyo, Japan,
assignors to International Standard Electric Corporation, New York, N. Y., a corporation of Delaware In Japan October 5, 1938 Application September 12, 1939, Serial No. 29;,510
' This invention relates to a photocell which-is formed by applying a selenium semi-conductor.
upon "the surface of a base electrode plate by coating a. thin film of a fourth-group metal such as tin, lead etc. upon the surface thereof and still more by coating a thin film of platinum, silver etc. thereupon. Its object is to obtain a photocell which is excellent in sensitivity.
The drawing is a view showing the construction of a sensitive element in the photocell of this invention.
This invention is related to the improvement of a photocell using a selenium semi-conductor. In a photocell of this type practiced heretofore,
. it is formed by having a selenium semi-conductor applied upon a basemetallic plate and by having a thin film of platinum, silver, copper etc. coated upon the surface thereof. v
1 Claim. (Cl. 136-89) time under pressure, therebyc'onstructing a seleniumsemi-conductor having a thickness unimetal had been attached upon the surface 'of the form in sensitivity.
Reference numeral 3 shows a thin film in which one or several kinds of a fourth-group selenium by a spraying or distillation method.
Reference numeral 4 is a platinum or silver coating. It is necessary that the thin films composed of the layers (3) .(4) are of suitable thickv ness so as" to allow a large amount of light to We produce a photocell by first applying a thin film of a fourth-group metal such as a tin etc.-
upon a selenium semi-conductor which had been applied to a base electrode by a spraying or'distillation method, and then by coating a thin film of platinum, silver etc. upon the surface of said film by a similar method. The photocell thus obtained is striking and excellent in its photoelectric effect.
Reference numeral I shows a base-electrode,
I usually an iron plate thesurface of which is made mechanically coarse. If required, I may be provided with a plating of nickel, cobalt etc.
Reference numeral 2 shows a layer of selenium semi-conductor formed by heating a'base iron plate to a given temperature'for a fixed time prior to its application, by having a molten sele-" nium applied or sprayed thereto and still more by heating it at a normal temperature for a fixed get to the selenium semi-conductor. The sensitive element is then mounted by pressing elec trodes consisting of a copper ring etc. against the upper electrode and the base electrode, re-
spectively. To protect the upper electrode, a glass plate or transparent lacqu'er etc. is provided for the purpose of the mechanical as well as the chemical protection of the sensitive element.
It is 'to be understood of course that although the invention has been described'in and thorium.
What is claimed is A photocell which'comprises a base electrode plate, a coating of aselenium semi-conductor thereon, a thin film of at least one of the metals belonging only to the fourth group of the periodic table of elements on the exposed surface of said selenium. semi-conductor coating, and a transparent film of a substantially chemically inert metal coated on the exposed surface of said thin film.
ZEN-ICI-Il KAMAYACHI.
KENICH rsrm. v
connection with tin and leadas possible fourth group metals for the layer 3, others may beemployed, such as titanium, germanium, zirconium, cerium, silicon,
US294510A 1938-10-05 1939-09-12 Photocell Expired - Lifetime US2276198A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2276198X 1938-10-05

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US2276198A true US2276198A (en) 1942-03-10

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