US2276198A - Photocell - Google Patents
Photocell Download PDFInfo
- Publication number
- US2276198A US2276198A US294510A US29451039A US2276198A US 2276198 A US2276198 A US 2276198A US 294510 A US294510 A US 294510A US 29451039 A US29451039 A US 29451039A US 2276198 A US2276198 A US 2276198A
- Authority
- US
- United States
- Prior art keywords
- photocell
- conductor
- thin film
- selenium
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 description 9
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 239000011669 selenium Substances 0.000 description 8
- 229910052711 selenium Inorganic materials 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000004821 distillation Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 1
- BSFODEXXVBBYOC-UHFFFAOYSA-N 8-[4-(dimethylamino)butan-2-ylamino]quinolin-6-ol Chemical compound C1=CN=C2C(NC(CCN(C)C)C)=CC(O)=CC2=C1 BSFODEXXVBBYOC-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/12—Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate
Definitions
- This invention relates to a photocell which-is formed by applying a selenium semi-conductor.
- the drawing is a view showing the construction of a sensitive element in the photocell of this invention.
- This invention is related to the improvement of a photocell using a selenium semi-conductor.
- a photocell of this type practiced heretofore,
- Reference numeral 3 shows a thin film in which one or several kinds of a fourth-group selenium by a spraying or distillation method.
- Reference numeral 4 is a platinum or silver coating. It is necessary that the thin films composed of the layers (3) .(4) are of suitable thickv ness so as" to allow a large amount of light to We produce a photocell by first applying a thin film of a fourth-group metal such as a tin etc.-
- Reference numeral I shows a base-electrode
- I usually an iron plate thesurface of which is made mechanically coarse. If required, I may be provided with a plating of nickel, cobalt etc.
- Reference numeral 2 shows a layer of selenium semi-conductor formed by heating a'base iron plate to a given temperature'for a fixed time prior to its application, by having a molten sele-" nium applied or sprayed thereto and still more by heating it at a normal temperature for a fixed get to the selenium semi-conductor.
- the sensitive element is then mounted by pressing elec trodes consisting of a copper ring etc. against the upper electrode and the base electrode, re-
- a glass plate or transparent lacqu'er etc. is provided for the purpose of the mechanical as well as the chemical protection of the sensitive element.
- a photocell which'comprises a base electrode plate, a coating of aselenium semi-conductor thereon, a thin film of at least one of the metals belonging only to the fourth group of the periodic table of elements on the exposed surface of said selenium. semi-conductor coating, and a transparent film of a substantially chemically inert metal coated on the exposed surface of said thin film.
- connection with tin and leadas possible fourth group metals for the layer 3, others may beemployed, such as titanium, germanium, zirconium, cerium, silicon,
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Description
ZEN-[CHI KAMAYACH! ET AL 2,276,198
March 10, 1942.
PHOTOGELL Filed Sept. 12, 1939 6761 I C O/VDUC 771 5 M55444 /C MVEE SELE/V/UM 1-H YER 5 5/755 ELECTRODE 4,975? or MEI-AL FROM 77/5 Fall/2771' PE/F/Ofl/C GROUP ATTORNEY i Patented Mar. 1942 PHOTOCELL Zen-Ichi Kamayaclii and Kenichi Ishii, ,Shibaku,
Tokyo, Japan,
assignors to International Standard Electric Corporation, New York, N. Y., a corporation of Delaware In Japan October 5, 1938 Application September 12, 1939, Serial No. 29;,510
' This invention relates to a photocell which-is formed by applying a selenium semi-conductor.
upon "the surface of a base electrode plate by coating a. thin film of a fourth-group metal such as tin, lead etc. upon the surface thereof and still more by coating a thin film of platinum, silver etc. thereupon. Its object is to obtain a photocell which is excellent in sensitivity.
The drawing is a view showing the construction of a sensitive element in the photocell of this invention.
This invention is related to the improvement of a photocell using a selenium semi-conductor. In a photocell of this type practiced heretofore,
. it is formed by having a selenium semi-conductor applied upon a basemetallic plate and by having a thin film of platinum, silver, copper etc. coated upon the surface thereof. v
1 Claim. (Cl. 136-89) time under pressure, therebyc'onstructing a seleniumsemi-conductor having a thickness unimetal had been attached upon the surface 'of the form in sensitivity.
Reference numeral 4 is a platinum or silver coating. It is necessary that the thin films composed of the layers (3) .(4) are of suitable thickv ness so as" to allow a large amount of light to We produce a photocell by first applying a thin film of a fourth-group metal such as a tin etc.-
upon a selenium semi-conductor which had been applied to a base electrode by a spraying or'distillation method, and then by coating a thin film of platinum, silver etc. upon the surface of said film by a similar method. The photocell thus obtained is striking and excellent in its photoelectric effect.
Reference numeral I shows a base-electrode,
I usually an iron plate thesurface of which is made mechanically coarse. If required, I may be provided with a plating of nickel, cobalt etc.
spectively. To protect the upper electrode, a glass plate or transparent lacqu'er etc. is provided for the purpose of the mechanical as well as the chemical protection of the sensitive element.
It is 'to be understood of course that although the invention has been described'in and thorium.
What is claimed is A photocell which'comprises a base electrode plate, a coating of aselenium semi-conductor thereon, a thin film of at least one of the metals belonging only to the fourth group of the periodic table of elements on the exposed surface of said selenium. semi-conductor coating, and a transparent film of a substantially chemically inert metal coated on the exposed surface of said thin film.
ZEN-ICI-Il KAMAYACHI.
KENICH rsrm. v
connection with tin and leadas possible fourth group metals for the layer 3, others may beemployed, such as titanium, germanium, zirconium, cerium, silicon,
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2276198X | 1938-10-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US2276198A true US2276198A (en) | 1942-03-10 |
Family
ID=16863765
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US294510A Expired - Lifetime US2276198A (en) | 1938-10-05 | 1939-09-12 | Photocell |
Country Status (1)
| Country | Link |
|---|---|
| US (1) | US2276198A (en) |
-
1939
- 1939-09-12 US US294510A patent/US2276198A/en not_active Expired - Lifetime
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