US20260006931A1 - Solid-state imaging element having a plurality of microlenses - Google Patents

Solid-state imaging element having a plurality of microlenses

Info

Publication number
US20260006931A1
US20260006931A1 US19/316,330 US202519316330A US2026006931A1 US 20260006931 A1 US20260006931 A1 US 20260006931A1 US 202519316330 A US202519316330 A US 202519316330A US 2026006931 A1 US2026006931 A1 US 2026006931A1
Authority
US
United States
Prior art keywords
solid
state imaging
imaging element
color filter
range
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
US19/316,330
Other languages
English (en)
Inventor
Fumiya KATO
Makoto Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toppan Holdings Inc
Original Assignee
Toppan Holdings Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toppan Holdings Inc filed Critical Toppan Holdings Inc
Publication of US20260006931A1 publication Critical patent/US20260006931A1/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding

Definitions

  • Embodiments of the present invention relate to a solid-state imaging element, such as a charge-coupled device or a complementary metal-oxide-semiconductor device.
  • Solid-state imaging elements such as charge-coupled devices (CCDs) and complementary metal-oxide-semiconductor (CMOS) devices, which use photoelectric conversion elements such as photodiodes, are employed in digital still cameras, digital video cameras, and the like.
  • CCDs charge-coupled devices
  • CMOS complementary metal-oxide-semiconductor
  • incident light is focused by microlenses and then delivered to a photoelectric conversion element via a color filter.
  • color filters made of a colored composition in which a pigment is dispersed in recent years, in order to improve the sensitivity and color separation properties, color filters made of a colored composition in which a dye having superior color characteristics to pigments is dispersed, are starting to be used.
  • a solid-state imaging element includes: a semiconductor substrate having a plurality of photoelectric conversion elements; a microlens layer having a plurality of microlenses configured to cause light to enter the photoelectric conversion elements of the semiconductor substrate; and a color filter disposed between the semiconductor substrate and the microlens layer; wherein the color filter has a transmittance that exhibits a maximum value between wavelengths of 400 nm to 500 nm, while also exhibiting a transmittance of 50% between wavelengths of 460 nm to 490 nm, and has a refractive index with a smaller value than a value of a refractive index of the microlenses at a wavelength in which the transmittance becomes the maximum value.
  • the color filter comprises a blue pigment and a violet dye.
  • the color filter further comprises a violet pigment.
  • a ratio of the violet pigment to the violet dye in the color filter is within a range from 0.1 to 10.
  • a ratio of a total amount of the violet dye and the violet pigment to the blue pigment in the color filter is within a range from 0.1 to 10.
  • the color filter comprises the blue pigment, the violet dye, and the violet pigment is within a range from 30% by mass or more to 70% by mass or less, relative to a total mass of a solid content of the color filter.
  • a refractive index of the color filter is within a range from 1.5 to 1.6 at a wavelength in which the transmittance has a maximum value.
  • a thickness of the color filter is within a range from 0.3 ⁇ m to 1.0 ⁇ m.
  • a refractive index of the microlenses is within a range from 1.60 to 1.65, within a wavelength range from 400 nm to 500 nm.
  • a thickness of the microlenses is within a range from 0.3 ⁇ m to 1.0 ⁇ m.
  • FIG. 1 is a cross-sectional view showing a schematic structure of essential parts of a solid-state imaging element according to an embodiment
  • FIG. 2 is a graph showing the relationship between the wavelength and transmittance of color filters prepared as a test specimen and a comparative specimen;
  • FIG. 3 is a graph showing the relationship between the wavelength and refractive index of color filters and microlenses prepared as a test specimen and a comparative specimen.
  • a plurality of photoelectric conversion elements 12 are two-dimensionally arranged so as to correspond to pixels.
  • a semiconductor substrate 11 is usually provided with a protective layer (not shown) on the outermost surface for the purpose of protecting and flattening the surface (light incident surface).
  • the semiconductor substrate 11 is formed from a material that transmits visible light and can withstand a temperature of about 300° C.
  • materials include Si, oxides such as SiO 2 , nitrides such as SiN, mixtures of these materials, and other Si-containing materials.
  • a light-shielding layer 13 is disposed to shield a portion of the light that is incident so as to correspond to light-receiving regions of the photoelectric conversion elements 12 .
  • a plurality of color filters 14 A to 14 C of each color are arranged so as to correspond to a respective photoelectric conversion element 12 .
  • the color filters 14 A to 14 C are arranged in a predetermined pattern and correspond to the respective colors used for color separation of the incident light.
  • the color filters 14 A to 14 C are arranged in a Bayer array, which is a preset regular pattern corresponding to each of the plurality of photoelectric conversion elements 12 according to the pixel position.
  • the color filters 14 A to 14 C are not necessarily limited to being arranged in a Bayer array, and other arrangements are also possible.
  • Partition walls 15 are respectively arranged between adjacent color filters 14 A to 14 C.
  • the arrangement of the partition walls 15 can be omitted.
  • a microlens layer 16 is arranged, on which a plurality of protruding microlenses 17 , each having a hemispherical shape that corresponds to, and that causes light to enter, respective photoelectric conversion element 12 , are provided. That is, the color filters 14 A to 14 C are arranged between the semiconductor substrate 11 and the microlens layer 16 .
  • the microlenses 17 have a refractive index of 1.60 or more and 1.65 or less in a wavelength range of 400 nm or more and 500 nm or less.
  • Examples of the material of microlenses 17 having such a refractive index include “TMR P15 (product number)”, manufactured by Tokyo Ohka Kogyo Co., Ltd.
  • the microlenses 17 can also contain a filler such as a hollow silica filler.
  • the height (T 1 ) of the microlenses 17 which is the shortest length connecting the bottom portion and top portion, is preferably 0.3 ⁇ m or more and 1.0 ⁇ m or less, and more preferably 0.4 ⁇ m or more and 0.7 ⁇ m or less. If the height is less than 0.3 ⁇ m, the light focusing properties are reduced, which is not preferable, and if the height exceeds 1.0 ⁇ m, patterning by a photolithography method becomes difficult, which is not preferable.
  • the color filters 14 A to 14 C are made by adding a colorant of a predetermined color and various additives to a colorless and transparent resin material.
  • the resin material of the color filters 14 A to 14 C include acrylic resins and epoxy resins.
  • a green pigment (GP) such as C.I. Pigment Green 7, 10, 36, 37, or 58, a zinc phthalocyanine pigment described in JP 2008-19383 A, JP 2007-320986 A, JP 2004-70342 A, or the like, or an aluminum phthalocyanine pigment described in JP 4893859 B, may be mixed as a colorant.
  • GP green pigment
  • C.I. Pigment Green 7, 10, 36, 37, or 58 a zinc phthalocyanine pigment described in JP 2008-19383 A, JP 2007-320986 A, JP 2004-70342 A, or the like
  • an aluminum phthalocyanine pigment described in JP 4893859 B may be mixed as a colorant.
  • a red pigment such as C.I. Pigment Red 7, 14, 41, 48:1, 48:2, 48:3, 48:4, 57:1, 81, 81:1, 81:2, 81:3, 81:4, 122, 146, 149, 166, 168, 169, 176, 177, 178, 179, 184, 185, 187, 200, 202, 208, 210, 221, 224, 242, 246, 254, 255, 264, 268, 269, 270, 272, 273, 274, 276, 277, 278, 279, 280, 281, 282, 283, 284, 285, 286, or 287, a diketopyrrolopyrrole pigment described in JP 2011-523433 T, or a naphthol azo pigment described in JP 2013-161025 A, may be mixed as a colorant.
  • RP red pigment
  • a blue pigment such as C.I. Pigment Blue 1, 1:2, 9, 14, 15, 15:1, 15:2, 15:3, 15:4, 15:6, 16, 22, 60, or 64, or a copper phthalocyanine pigment described in JP 2004-333817 A or JP 4893859 B
  • a violet dye such as C.I. Acid Red 50, 51, 52, 87, 91, 92, 94, 289, or 388, C.I. Acid Violet 9, 30, or 102, C.I. Basic Red 1 (Rhodamine 6G), 2, 3, 4, 8, 10, or 11, C.I. Basic Violet 10 (Rhodamine B) or 11, C.I. Solvent Red 218, C.I.
  • Mordant Red 27, C.I. Reactive Red 36 (Rose Bengal B), Sulforhodamine G, a xanthene dye described in JP 2010-32999 A or JP 4492760 B, or a cyanine dye, may be at least mixed as colorants. It is preferable that the color filter 14 C also contains a violet pigment (VP) such as a dioxazine pigment, for example, C.I. Pigment Violet 1, 19, 23, 29, 32, 36, or 38.
  • VP violet pigment
  • additives examples include sensitizers, antioxidants, dissolved oxygen reducing agents, leveling agents, storage stabilizers, adhesion promoters, and dispersing aids.
  • the green pigment (GP) is preferably within a range of 30% by mass or more and 65% by mass or less, and more preferably in a range of 50% by mass or more and 65% by mass or less, relative to the total mass of the solid content (TS). This is because, if the content is less than 50% by mass, it is difficult for the filter to sufficiently function as a color filter, which is not preferable, and if the content exceeds 65% by mass, photosensitive components tend to be unable to sufficiently function, and pattern formation becomes difficult, which is not preferable.
  • the red pigment (RP) is preferably within a range of 30% by mass or more and 65% by mass or less, and more preferably in a range of 50% by mass or more and 65% by mass or less, relative to the total mass of the solid content (TS). This is because, if the content is less than 50% by mass, it is difficult for the filter to sufficiently function as a color filter, which is not preferable, and if the content exceeds 65% by mass, photosensitive components tend to be unable to sufficiently function, and pattern formation becomes difficult, which is not preferable.
  • the ratio (VP/VD) of the violet pigment (VP) to the violet dye (VD) is preferably 0.1 or more and 10 or less, and more preferably 0.1 or more and 1 or less. This is because, if the ratio is less than 0.1, the light resistance tends to decrease, which is not preferable, and if the ratio exceeds 10, color characteristics tend to deteriorate, which is not preferable.
  • the ratio (VDP/BP) of the total amount (VDP) of the violet dye (VD) and the violet pigment (VP) to the blue pigment (BP) is preferably 0.1 or more and 1 or less, and more preferably 0.1 or more and 0.5 or less. This is because, if the ratio is less than 0.1, optical crosstalk with green tends to increase, and color reproducibility tends to deteriorate, which is not preferable, and if the ratio exceeds 1, transmittance tends to increase on the long wavelength side of the spectrum, and color purity tends to decrease, which is not preferable.
  • the blue pigment (BP), the violet dye (VD), and the violet pigment (VP) in total are preferably contained in a range of 30% by mass or more and 70% by mass or less, and more preferably in a range of 45% by mass or more and 55% by mass or less, relative to the total mass of the solid content (TS). This is because, if the content is less than 30% by mass, it is difficult for the filter to sufficiently function as a color filter, which is not preferable, and if the content exceeds 70% by mass, a decrease in light transmittance may occur, which is not preferable.
  • the color filter 14 C has a transmittance in which the maximum value is within a wavelength range of 400 nm or more and 500 nm or less, that is, exhibits a maximum value for transmittance between wavelengths of 400 nm to 500 nm (see FIG. 2 ). Further, the color filter 14 C has a transmittance of 50% within a wavelength range of 460 nm or more and 490 nm or less, that is, exhibits a transmittance of 50% between 460 nm and 490 nm (see FIG. 2 ). In addition, the color filter 14 C exhibits a refractive index that is a smaller value (1.5 or more and less than 1.6) than that of the microlenses 17 at the wavelength in which the transmittance becomes the maximum value (see FIG. 3 ).
  • the thickness T 2 of the color filters 14 A to 14 C in the light transmission direction is preferably 0.3 ⁇ m or more and 1.0 ⁇ m or less, and more preferably 0.4 ⁇ m or more and 0.7 ⁇ m or less. This is because, if the thickness is less than 0.3 ⁇ m, it is difficult for the filter to sufficiently function as a color filter, which is not preferable, and if the thickness exceeds 1.0 ⁇ m, light is less likely to reach the bottom portion of the film during exposure due to absorption by the coloring material, which tends to cause a decrease in the patterning properties, which is not preferable.
  • the solid-state imaging element 10 according to the present embodiment described above can be manufactured by applying a known method. That is, a light-shielding layer 13 is provided on the semiconductor substrate 11 provided with the photoelectric conversion elements 12 , the color filters 14 A to 14 C and the partition walls 15 are provided on the light-shielding layer 13 , and then the microlens layer 16 is further provided, and the microlenses 17 are formed on the microlens layer 16 by etching or the like.
  • the color filter 14 C has a transmittance that exhibits a maximum value within a wavelength range of 400 nm or more and 500 nm or less, the transmittance becomes 50% within a wavelength range of 460 nm or more and 490 nm or less, and the refractive index at the wavelength in which the transmittance becomes the maximum value, is a smaller value (1.5 or more and less than 1.6) than that of the microlenses 17 (1.60 or more and 1.65 or less). Therefore, it is possible to prevent a decrease in the light focusing efficiency of blue light from the microlenses 17 toward the photoelectric conversion element 12 , and to improve the light focusing performance.
  • the solid-state imaging element 10 of the present embodiment because a decrease in light focusing efficiency can be prevented, and the light collection performance can be improved, the peak sensitivity within a wavelength range of 400 nm or more and 500 nm or less can be improved.
  • substituents that generally contribute to the refractive index of the resin material constituting the microlenses and color filters primarily include —SC 6 H 5 >—COC 6 H 5 >—OC 6 H 5 >—C 6 H 5 , which include a benzene ring, followed by —NH 2 >—NO 2 >—OH>—CN>—OCH 3 , and heavy halogens (—I)>—Br>—Cl.
  • a pyridine structure or an alkyl group does not significantly change the refractive index, and —F has the effect of significantly reducing the refractive index due to its small polarizability.
  • a test specimen of the solid-state imaging element 10 shown in FIG. 1 described in the embodiment above was produced under the conditions below, and a comparative specimen serving as a comparison target produced under the conditions below.
  • the transmittance of both the test specimen and the comparative specimen exhibited the maximum value at a wavelength of 450 nm.
  • the refractive index of the comparative specimen (1.625) at a wavelength of 450 nm was equal to the refractive index of the microlenses.
  • the refractive index of the test specimen (1.59) was smaller than the refractive index (1.625) of the microlenses.
  • the transmittance of the color filter exhibits a maximum value between wavelengths of 400 nm to 500 nm, while also exhibiting a transmittance of 50% between wavelengths of 460 nm to 490 nm, and the refractive index of the color filter is a smaller value than that of the microlenses at the wavelength in which the transmittance becomes the maximum value, it is possible to prevent a decrease in the light focusing efficiency of blue light from the microlenses toward the photoelectric conversion element, and to improve the light focusing performance, and therefore, it is possible to improve the peak sensitivity between wavelengths of 400 nm to 500 nm.
  • the solid-state imaging element according to the present invention can improve peak sensitivity between wavelengths of 400 nm to 500 nm, it can therefore be used very effectively in various industries.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Optical Filters (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
US19/316,330 2023-03-02 2025-09-02 Solid-state imaging element having a plurality of microlenses Pending US20260006931A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023-032130 2023-03-02
JP2023032130 2023-03-02
PCT/JP2024/005330 WO2024181157A1 (ja) 2023-03-02 2024-02-15 固体撮像素子

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2024/005330 Continuation WO2024181157A1 (ja) 2023-03-02 2024-02-15 固体撮像素子

Publications (1)

Publication Number Publication Date
US20260006931A1 true US20260006931A1 (en) 2026-01-01

Family

ID=92589784

Family Applications (1)

Application Number Title Priority Date Filing Date
US19/316,330 Pending US20260006931A1 (en) 2023-03-02 2025-09-02 Solid-state imaging element having a plurality of microlenses

Country Status (6)

Country Link
US (1) US20260006931A1 (https=)
EP (1) EP4675685A1 (https=)
JP (1) JPWO2024181157A1 (https=)
CN (1) CN120814355A (https=)
TW (1) TW202507340A (https=)
WO (1) WO2024181157A1 (https=)

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4175169B2 (ja) * 2003-05-02 2008-11-05 凸版印刷株式会社 固体撮像素子及びその製造方法
JP4368157B2 (ja) 2002-07-24 2009-11-18 大日本印刷株式会社 カラーフィルター用緑色顔料、緑色顔料分散体、感光性着色組成物、カラーフィルター、及び、液晶パネル
JP4393104B2 (ja) 2003-05-07 2010-01-06 富士フイルム株式会社 Ｌｃｄ用硬化性緑色組成物およびカラーフィルタ
KR100866718B1 (ko) * 2005-06-17 2008-11-05 도판 인사츠 가부시키가이샤 촬상 소자
JP4882515B2 (ja) 2006-05-30 2012-02-22 Ｄｉｃ株式会社 ポリハロゲン化亜鉛フタロシアニン顔料組成物及びカラーフィルタ
JP5167602B2 (ja) 2006-07-14 2013-03-21 Ｄｉｃ株式会社 ポリハロゲン化亜鉛フタロシアニン、感光性組成物およびカラーフィルター
EP2303967B1 (en) 2008-05-28 2013-11-13 Basf Se Improved, red colour filter composition
JP5504627B2 (ja) 2008-07-01 2014-05-28 住友化学株式会社 着色感光性樹脂組成物
US8445849B2 (en) * 2009-03-18 2013-05-21 Pixart Imaging Inc. IR sensing device
JP4492760B1 (ja) 2009-12-01 2010-06-30 東洋インキ製造株式会社 カラーフィルタ用青色着色組成物、およびカラーフィルタ
JP4893859B1 (ja) 2011-01-28 2012-03-07 東洋インキＳｃホールディングス株式会社 カラーフィルタ用着色組成物、およびカラーフィルタ
JP5759924B2 (ja) 2011-06-06 2015-08-05 富士フイルム株式会社 カラーフィルタ、ｃｃｄセンサ、ｃｍｏｓセンサ、有機ｃｍｏｓセンサ、および固体撮像素子
JP5859334B2 (ja) 2012-02-08 2016-02-10 矢崎総業株式会社 ヘッドアップディスプレイ装置
JP7057487B2 (ja) * 2017-09-20 2022-04-20 Ａｇｃ株式会社 光学装置および光学部材

Also Published As

Publication number Publication date
TW202507340A (zh) 2025-02-16
EP4675685A1 (en) 2026-01-07
CN120814355A (zh) 2025-10-17
WO2024181157A1 (ja) 2024-09-06
JPWO2024181157A1 (https=) 2024-09-06

Similar Documents

Publication Publication Date Title
US20070187794A1 (en) Imaging device
KR102464660B1 (ko) 고체 촬상 장치 및 광학 필터
US7084472B2 (en) Solid-state imaging device and manufacturing method therefor
JP2000151933A (ja) 撮像素子及びその製造方法
US9978789B2 (en) Image-sensing device
US20070188635A1 (en) Solid-state imaging device and camera
JP2023029378A (ja) 構造体、固体撮像素子および画像表示装置
US8395699B2 (en) Solid-state imaging device, camera, electronic apparatus, and method for manufacturing solid-state imaging device
US20070145241A1 (en) Solid state imaging device
US20050045805A1 (en) Solid-state image sensor and a manufacturing method thereof
US20260006931A1 (en) Solid-state imaging element having a plurality of microlenses
JP7615570B2 (ja) 固体撮像素子
JP4304987B2 (ja) 固体撮像素子及びその製造方法
JP2000294758A (ja) 固体撮像素子
JP5124917B2 (ja) 撮像素子
US7576314B2 (en) Solid-state imaging device and method for manufacturing the same
JP2003222719A (ja) 有機顔料を用いたカラーフィルタ
JP7423908B2 (ja) 固体撮像装置
US20110139966A1 (en) Solid-state imaging element and method for manufacturing the same
KR20240107130A (ko) 구조체 및 고체 촬상 소자
JP2010078680A (ja) カラーフィルタ及び固体撮像素子
US20050186489A1 (en) Color filter materials, color filters, manufacturing method and image sensor
JP2023176737A (ja) 固体撮像素子及びその製造方法
US20080129856A1 (en) Image sensor color filter array and method of producing the same
JP2024137208A (ja) カラーフィルタ及び固体撮像素子

Legal Events

Date Code Title Description
STPP Information on status: patent application and granting procedure in general

Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION