US20240120225A1 - Apparatus for transferring substrate, substrate processing system and method of processing substrate - Google Patents

Apparatus for transferring substrate, substrate processing system and method of processing substrate Download PDF

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Publication number
US20240120225A1
US20240120225A1 US18/273,446 US202218273446A US2024120225A1 US 20240120225 A1 US20240120225 A1 US 20240120225A1 US 202218273446 A US202218273446 A US 202218273446A US 2024120225 A1 US2024120225 A1 US 2024120225A1
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Prior art keywords
substrate
chamber
substrate transfer
module
transfer
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English (en)
Inventor
Takehiro Shindo
Akinori Shimamura
Hiromitsu Sakaue
Dongwei Li
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Assigned to TOKYO ELECTRON LIMITED reassignment TOKYO ELECTRON LIMITED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: LI, DONGWEI, SAKAUE, HIROMITSU, SHIMAMURA, AKINORI, SHINDO, TAKEHIRO
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67709—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations using magnetic elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance

Definitions

  • the present disclosure relates to an apparatus for transferring a substrate, a substrate processing system, and a method of processing the substrate.
  • the wafer is transferred between a carrier that accommodates the wafer and a wafer processing chamber in which the processing is executed.
  • wafer transfer mechanisms with various configurations are used.
  • Patent Document 1 discloses a substrate carrier that transfers a semiconductor substrate between processing chambers in the state of floating from a plate by using magnetic levitation.
  • the present disclosure provides a technique for transferring a substrate by a substrate transfer module by using magnetic levitation inside a substrate transfer chamber.
  • An apparatus for transferring a substrate transfers the substrate to a substrate processing chamber in which a substrate processing is performed.
  • the apparatus includes: a substrate transfer chamber including a floor portion provided with a first magnet, and a sidewall portion connected to the substrate processing chamber and having an opening portion through which a loading/unloading of the substrate between the substrate transfer chamber and the substrate processing chamber is performed; and a substrate transfer module including a substrate holder configured to hold the substrate, and a second magnet configured such that a repulsive force acts between the first magnet and the second magnet, the substrate transfer module being configured to be movable inside the substrate transfer chamber by a magnetic levitation based on the repulsive force, wherein the substrate transfer module is configured to perform the loading/unloading of the substrate by directly entering the substrate transfer chamber via the opening portion, or in a case in which a substrate transfer mechanism is fixedly provided inside the substrate transfer chamber to perform the loading/unloading of the substrate between the substrate transfer mechanism and the substrate processing chamber via the opening portion, the substrate transfer module is configured to
  • a substrate can be transferred inside a substrate transfer chamber by a substrate transfer module that uses magnetic levitation.
  • FIG. 1 is a plan view of a wafer processing system according to the present disclosure.
  • FIG. 2 is a vertical cross-sectional view of a portion of an interior of a vacuum transfer chamber provided in the wafer processing system.
  • FIG. 3 is a plan view of a first transfer module.
  • FIG. 4 is a schematic view illustrating a floor portion of the vacuum transfer chamber and the first transfer module.
  • FIG. 5 is a vertical cross-sectional view of a second transfer module.
  • FIG. 6 is a plan view of the second transfer module.
  • FIG. 7 is a first operational view relating to an example of an operation of the transfer module.
  • FIG. 8 is a second operational view relating to an example of the operation of the transfer module.
  • FIG. 9 is a third operational view relating to an example of the operation of the transfer module.
  • FIG. 10 is a fourth operational view relating to an example of the operation of the transfer module.
  • FIG. 11 is a first operational view relating to another example of the operation of the transfer module.
  • FIG. 12 is a second operational view relating to another example of the operation of the transfer module.
  • FIG. 13 is a third operational view relating to another example of the operation of the transfer module.
  • FIG. 14 is a first operational view relating to a notch alignment by the transfer module.
  • FIG. 15 is a second operational view relating to the notch alignment by the transfer module.
  • FIG. 16 is a third operational view relating to the notch alignment by the transfer module.
  • FIG. 17 is a perspective view illustrating a placement module installed on a placement part.
  • FIG. 18 is a vertical cross-sectional view illustrating the placement module installed on the placement part.
  • FIG. 19 is an explanatory view illustrating alignment.
  • FIG. 20 is a vertical cross-sectional view illustrating a gas supply module that moves on a ceiling surface.
  • FIG. 21 is a schematic view illustrating an operation of the gas supply module.
  • FIG. 22 is a perspective view illustrating a first transfer module including a connection mechanism.
  • FIG. 23 is a schematic view illustrating transferring the first transfer module that is faoled.
  • FIG. 24 is a plan view illustrating a wafer processing system including a load-lock chamber for recovery.
  • FIG. 25 is a schematic view illustrating transferring a component to be installed in an apparatus by the first transfer module.
  • FIG. 26 is a plan view of a wafer processing system in which a plurality of vacuum transfer chambers are connected to each other.
  • FIG. 27 is a plan view illustrating another example of the wafer processing system.
  • FIG. 28 is a first operational view relating to an operation of a transfer module in the wafer processing system.
  • FIG. 29 is a second operational view relating to the operation of the transfer module in the wafer processing system.
  • FIG. 30 is a third operational view relating to the operation of the transfer module in the wafer processing system.
  • FIG. 31 is a fourth operational view relating to the operation of the transfer module in the wafer processing system.
  • FIG. 32 is a fifth operational view relating to the operation of the transfer module in the wafer processing system.
  • FIG. 33 is a sixth operational view relating to the operation of the transfer module in the wafer processing system.
  • FIG. 1 An overall configuration of a wafer processing system 100 , which is an apparatus for processing a substrate according to an embodiment of the present disclosure, will be described with reference to FIG. 1 .
  • FIG. 1 illustrates a multi-chamber-type wafer processing system 100 including a plurality of wafer processing chambers 110 , which are substrate processing chambers for processing wafers W.
  • the wafer processing system 100 includes a load port 141 , an atmospheric transfer chamber 140 , a load-lock chamber 130 , a vacuum transfer chamber 120 , and a plurality of wafer processing chambers 110 .
  • a direction in which the load port 141 is provided when viewed from the vacuum transfer chamber 120 is defined as a front side.
  • the load port 141 , the atmospheric transfer chamber 140 , the load-lock chamber 130 , and the vacuum transfer chamber 120 are arranged in this order in a horizontal direction from the front side.
  • the plurality of wafer processing chambers 110 are arranged side by side on left and right sides of the vacuum transfer chamber 120 when viewed from the front side.
  • the load port 141 is configured as a stage on which a carrier C that accommodates wafers W to be processed is placed.
  • Four load ports 141 are installed side by side in the left-right direction when viewed from the front side.
  • the carrier C for example, a front opening unified pod (FOUP) may be used.
  • FOUP front opening unified pod
  • the atmospheric transfer chamber 140 is kept in an atmospheric pressure (normal pressure) atmosphere. For example, a down-flow of clean air is formed in the atmospheric transfer chamber 140 .
  • a wafer transfer mechanism 142 configured to transfer a wafer W is provided inside the atmospheric transfer chamber 140 .
  • the wafer transfer mechanism 142 in the atmospheric transfer chamber 140 transfers the wafer W between the carrier C and the load-lock chamber 130 .
  • an alignment chamber 150 for performing alignment of the wafer W is provided on the left surface of the atmospheric transfer chamber 140 .
  • Three load-lock chambers 130 are installed side by side between the vacuum transfer chamber 120 and the atmospheric transfer chamber 140 .
  • Each of the load-lock chambers 130 has a lifting pin 131 that pushes up and hold the wafer W loaded thereinto from below.
  • Three lifting pins 131 are provided at regular intervals in a circumferential direction and are configured to be movable up and down.
  • the interior of the load-lock chambers 130 may be switched between an atmospheric pressure atmosphere and a vacuum atmosphere.
  • the load-lock chambers 130 and the atmospheric transfer chamber 140 are connected to each other via gate valves 133 .
  • the load-lock chambers 130 and the vacuum transfer chamber 120 are connected to each other via gate valves 132 .
  • Boundary portions of the vacuum transfer chamber 120 and each load-lock chamber 130 are connected to each other so as not to form a stepped portion on the floor surface. Therefore, the load-lock chamber 130 and the vacuum transfer chamber 120 are configured so as not to hinder movement of a first transfer module 20 (to be described later) between the load-lock chamber 130 and the vacuum transfer chamber 120 .
  • the vacuum transfer chamber 120 is depressurized to the vacuum atmosphere by a vacuum exhaust mechanism (not illustrated).
  • the vacuum transfer chamber 120 corresponds to the substrate transfer chamber of the present embodiment.
  • the vacuum transfer chamber 120 in which the wafer W is transferred in the vacuum atmosphere is constituted with a rectangular housing formed to elongate in a front-rear direction in a plan view.
  • the wafer processing system 100 of the present example on each of the right and left sidewall portions of the vacuum transfer chamber 120 , three wafer processing chambers 110 (that is, six wafer processing chambers 110 in total) are provided via gate valves 111 .
  • the wafer W is transferred between the vacuum transfer chamber 120 and the wafer processing chambers 110 via respective openings (not illustrated) that are opened and closed by the gate valves 111 .
  • the wafer processing chambers 110 are connected to the vacuum transfer chamber 120 via the above-mentioned openings, respectively, that are provided with the gate valves 111 .
  • a stage 112 is provided inside each wafer processing chamber 110 .
  • a predetermined processing is performed on the wafer W placed on the stage 112 in a state in which an internal pressure of the wafer processing chamber 110 is reduced to the vacuum atmosphere by a vacuum exhaust mechanism (not illustrated). Examples of the processing to be performed on the wafer W may include etching, film formation, cleaning, ashing, and the like.
  • the stage 112 is provided with, for example, a heater (not illustrated) configured to heat the wafer W to a predetermined temperature.
  • the wafer processing chamber 110 is provided with a processing gas supplier (not illustrated) constituted with a shower head or the like.
  • the wafer processing chamber 110 corresponds to the substrate processing chamber of the present embodiment.
  • the wafer processing chambers 110 are installed to face each other with respective regions interposed therebetween from left and right sides.
  • a wafer transfer arm 5 which is a substrate transfer mechanism, is provided in each of the front region and the middle region. As illustrated in FIGS.
  • the wafer transfer arm 5 is configured with a base 50 fixed to the bottom surface of the vacuum transfer chamber 120 , and an articulated arm, in which a lower arm portion 51 connected to the upper side of the base 50 via a rotary shaft (not illustrated), an upper arm portion 52 , and a wafer holder 53 arranged in two stages are connected in this order from the lower side.
  • the wafer transfer arm 5 may operate to be extensible and to be rotatable about a vertical axis.
  • the wafer transfer arm 5 provided in the front-stage region (front side) and the wafer transfer arm 5 provided in the middle-stage region (rear side) will be denoted together with letters A and B ( 5 A and 5 B).
  • each placement part 4 In each of a space between the front-stage region and the middle-stage region and a space between the middle-stage region and the rear-stage region, three placement parts 4 , which are substrate delivery parts on which wafers W are temporarily placed, are arranged side by side, for example, in the left-right direction. The positions at which the placement parts 4 are arranged correspond to positions at which the substrates are to be delivered.
  • each placement part 4 In a plan view, each placement part 4 is provided with three lifting pins 41 for supporting the wafer W to form a triangular support surface.
  • the lifting pins 41 are configured to move up and down from the bottom surface of the vacuum transfer chamber 120 by a lifting mechanism (not illustrated) and push up and hold the wafer W from the lower side.
  • regions where the wafers W supported by the lifting pins 41 are projected onto the bottom surface of the vacuum transfer chamber 120 are indicated as the placement parts 4 by dashed lines.
  • the placement parts 4 arranged between the wafer transfer arm 5 A and the wafer transfer arm 5 B, and the placement parts 4 provided on the rear side of the wafer transfer arm 5 B will be denoted together with letters A and B ( 4 A and 4 B).
  • the placement parts 4 A and 4 B are configured such that the lifting pins 41 protrude from the bottom surface of the vacuum transfer chamber 120 when holding the wafer W and the lifting pins 41 are lowered below the bottom surface of the vacuum transfer chamber 120 when not holding the wafer W. Accordingly, when no wafers W are held, first and second transfer modules 20 and 30 (to be described later) may pass above the placement parts 4 A and 4 B.
  • a distance between each of the placement parts 4 A and 4 B and the base 50 of each of the wafer transfer arms 5 A and 5 B in the front-rear direction is set to a distance that allows the first transfer module 20 (to be described later) to pass therethrough even when the lifting pins 41 are in a raised state ( FIG. 2 ).
  • a distance between the base 50 of the wafer transfer arm 5 A located on the front side and the load-lock chambers 130 in the front-rear direction is also set to a distance that allows the first transfer module 20 to pass therethrough under the same conditions.
  • a distance between the placement parts 4 B located on the rear side and the rear-side sidewall surface of the vacuum transfer chamber 120 in the front-rear direction is set to a distance that allows the second transfer module 30 (to be described later) to take a posture in which the arm portion 32 is oriented in the front-rear direction.
  • each wafer transfer arm 5 ( 5 A or 5 B) is arranged to be interposed between two openings to which the wafer processing chambers 110 are connected.
  • a layout is provided in which the plurality of placement parts 4 are arranged along the alignment of these openings and the wafer transfer arm 5 .
  • the first transfer module 20 and the second transfer module 30 which are substrate transfer modules for transferring wafers W, are accommodated in the vacuum transfer chamber 120 .
  • the first transfer module 20 configured in a disk shape
  • the second transfer module 30 provided with the arm portion 32 having a fork-shaped substrate holder are accommodated.
  • Each of the first and second transfer modules 20 is configured to be movable within the vacuum transfer chamber 120 by magnetic levitation. In the following, a configuration of equipment relating to the transfer and processing of the wafer W by the first transfer module 20 will be described in detail.
  • the first transfer module 20 includes a stage 2 which is a substrate holder on which the wafer W is placed and held.
  • the stage 2 has a flat disk-like shape, and an upper surface thereof serves as a placement surface on which the wafer W to be transferred and processed is to be placed.
  • the first transfer module 20 is provided with three slits 21 extending from a periphery of the stage 2 inward of the stage 2 such that the first transfer module 20 does not interfere with the lifting pins 41 and 131 in the placement part 4 A or 4 B and the load-lock chamber 13 .
  • directing an open end side of the slit 21 in a predetermined direction may be expressed as causing the first transfer module 20 to directly face something.
  • the first transfer module 20 is disposed on the front side of the placement part 4 and moved toward the rear side of the vacuum transfer chamber 120 in a posture of directly facing the rear side of the vacuum transfer chamber 120 .
  • a distance that allows the first transfer module 20 to pass therethrough is secured between the placement part 4 and the base 50 of each wafer transfer arm 5 . Therefore, the first transfer module 20 may be disposed be at a position directly facing the placement part 4 without interference between the first transfer module 20 and the lifting pins 41 .
  • the first transfer module 20 is disposed on the rear side of the placement part 4 and moved toward the front side in a posture of directly facing the front side of the vacuum transfer chamber 120 .
  • the region in which the slits 21 are formed is moved along the arrangement positions of the lifting pins 41 .
  • the first transfer module 20 and the placement part 4 may be arranged vertically such that the centers of the first transfer module 20 and the lifting pins 41 are aligned without interfering with each other.
  • a plurality of floor-side coils 15 are arranged in each of the floor portions 10 of the vacuum transfer chamber 120 and the load-lock chamber 130 .
  • the floor-side coils 15 generate a magnetic field by being supplied with power from a power supply (not illustrated). From this point of view, the floor-side coils 15 correspond to a first magnet of the present embodiment.
  • a plurality of module-side coils 35 are arranged inside the first transfer module 20 as well.
  • a repulsive force acts between the module-side coils 35 and the magnetic fields generated by the floor-side coils 15 .
  • the first transfer module 20 may be magnetically levitated with respect to the floor portion 10 .
  • the first transfer module 20 may be moved in a desired direction on the floor portion 10 , or a floating level and the orientation of the first transfer module 20 may be adjusted.
  • the module-side coils 35 provided in the first transfer module 20 correspond to a second magnet of the present embodiment.
  • the module-side coils 35 are supplied with power from a battery (not illustrated), which is a magnet power supply provided in the first transfer module 20 , and function as electromagnets.
  • a configuration may be adopted in which a permanent magnet is additionally provided inside the first transfer module 20 in addition to the plurality of module-side coils 35 .
  • the module-side coils 35 may be constituted only with permanent magnets.
  • each module-side coil 35 is controlled by a feeding controller (not illustrated) provided in the first transfer module 20 such that power supplied to the module-side coil 35 is increased/decreased or the supply/cutoff of the power is performed.
  • the feeding controller may be configured to obtain a control signal related to feeding control through wireless communication with a controller 9 , which will be described later.
  • the first transfer module 20 has a size that can pass through the spaces between the base 50 of each of the wafer transfer arms 5 A and 5 B and the placement part 4 ( FIGS. 1 and 2 ).
  • the second transfer module 30 has a height dimension that can pass below the lower arm portion 51 turning at each of the wafer transfer arms 5 A and 5 B in the state of holding the wafer W.
  • the second transfer module 30 has substantially the same width dimension as the first transfer module 20 and includes a main body portion 31 having a rectangular planar shape.
  • the main body portion 31 is provided with an arm portion 32 which extends horizontally and holds the wafer W horizontally.
  • a fork that may be disposed to surround a region provided with three lifting pins 41 or 131 from the left and right is provided.
  • the fork corresponds to the substrate holder in the second transfer module 30 .
  • the arm portion 32 is set to have a length that can deliver the wafer W to the stage 112 by opening the gate valve 111 and inserting the arm portion 32 into the wafer processing chamber 110 while the main body portion 31 is located inside the vacuum transfer chamber 120 .
  • module-side coils 35 similar to those of the first transfer module 20 are provided inside the main body portion 31 of the second transfer module 30 .
  • the second transfer module 30 can be moved in a desired direction on the floor portion 10 or can be adjusted in the floating amount and the orientation of the second transfer module 30 .
  • the vacuum transfer chamber 120 which includes the first and second transfer modules 20 and 30 and the wafer transfer arms 5 described above, constitutes a substrate transfer apparatus of the present disclosure.
  • the wafer processing system 100 having the above-described configuration includes a controller 9 that controls the floor-side coils 15 , the wafer processing chamber 110 , and the like.
  • the controller 9 is constituted with a computer including a CPU and a storage, and controls each part of the wafer processing system 100 .
  • Programs in which a group of steps (instructions) for controlling the operations or the like of the first and second transfer modules 20 and 30 or the wafer processing chambers 110 are recorded in the storage.
  • the programs are stored in a storage medium such as a hard disk, a compact disk, a magnetic optical disk, or a memory card, from which the programs are installed on the computer.
  • the wafer W is taken out from the carrier C by the wafer transfer mechanism 142 in the atmospheric transfer chamber 140 .
  • the wafer W is then transferred to the alignment chamber 150 and aligned.
  • the gate valve 133 is opened.
  • the wafer transfer mechanism 142 enters into the load-lock chamber 130 , and the lifting pins 131 push up to receive the wafer W.
  • the first wafer W is loaded into the leftmost load-lock chamber 130 when viewed from the front side to the rear side.
  • the gate valve 133 is closed.
  • the interior of the load-lock chamber 130 is switched from the atmospheric pressure atmosphere to the vacuum atmosphere.
  • the wafers W are similarly transferred to respective load-lock chambers 130 .
  • the second wafer W is transferred to the rightmost load-lock chamber 130 .
  • the gate valve 132 is opened.
  • the first transfer module 20 A stands by in the vicinity of the connection position of the load-lock chamber 130 in a posture of directly facing the load-lock chamber 130 .
  • the magnetic fields generated by the floor-side coils 15 provided in the floor portion 10 are used to raise the first transfer module 20 A by magnetic levitation based on a repulsive force.
  • FIGS. 7 to 10 an example in which the wafers W are sequentially transferred to respective wafer processing chambers 110 provided on the right side of the vacuum transfer chamber 120 when viewed from the front side will be described.
  • letter A is added to the reference numeral of the first transfer module 20 that transfers the wafer W first ( 20 A)
  • letter B is added to the reference numeral of the first transfer module 20 that subsequently transfers the wafer W( 20 B).
  • the first transfer module 20 A enters into the load-lock chamber 130 and is located below the wafer W supported by the lifting pins 131 .
  • the lifting pins 131 are lowered and the wafer W is transferred to the first transfer module 20 , the wafer W is placed on the stage 2 .
  • the first transfer module 20 A holding the wafer W is retreated from the load-lock chamber 130 and is moved linearly to the placement part A4 on the front side.
  • the first transfer module 20 A moves rightward between the placement part 4 A on the front side and the base 50 of the wafer transfer arm 5 A on the front side. At this time, the first transfer module 20 A moves rightward in parallel without changing its direction. Then, after moving to the front of the rightmost placement part 4 A, the first transfer module 20 A changes its movement direction to the rear side and reaches the upper side of the placement part 4 ( FIG. 8 ).
  • the lifting pins 41 are raised to push up and receive the wafer W held by the first transfer module 20 A.
  • the subsequent wafer W is loaded into the leftmost load-lock chamber 130 , and the atmosphere in the load-lock chamber 130 is similarly switched to the vacuum atmosphere.
  • the first transfer module 20 B enters into the load-lock chamber 130 and receives the wafer W therefrom.
  • the first transfer module 20 A which has delivered the wafer W, moves to the rear side of the corresponding placement part 4 A, and moves from the right side to the left side on the rear side of the placement parts 4 A on the front side.
  • the first transfer module 20 A moves linearly toward the front side and stands by on the rear side of the load-lock chamber 130 on the left side.
  • the first transfer module 20 A moves to the placement part 4 A in a state in which the lifting pins 41 are not raised while maintaining the posture of directly facing the load-lock chamber 130 . This allows the first transfer module 20 A to move along a trajectory illustrated in FIG. 9 without interfering with the lifting pins 41 . This point is the same for the operation of the other first transfer module 20 B.
  • the wafer transfer arm 5 A on the front side receives the wafer W delivered to the placement part 4 A on the right side and transfer the wafer W to, for example, the wafer processing chamber 110 on the right side in the front stage.
  • the first transfer module 20 B holding the subsequent wafer W is retreated from the load-lock chamber 130 and moves linearly to the front side of the placement part 4 A.
  • the transfer module 20 B changes its movement direction and moves leftward between the placement part 4 A and the wafer transfer arm 5 A on the front side.
  • the movement direction is changed to the rear side and reaches the upper side of the placement part 4 A ( FIG. 9 ).
  • the lifting pins 41 of the placement part 4 A are lifted up, and the wafer W is delivered to the lifting pins 41 .
  • the first transfer module 20 B which has delivered the wafer W, moves to the rear side of the corresponding placement part 4 , and then changes its movement direction to the right. Thereafter, the first transfer module 20 B moves linearly toward the front side and stands by on the rear side of the rightmost load-lock chamber 130 .
  • the wafer transfer arm 5 B on the rear side receives the wafer W delivered to the placement part 4 A on the central side and transfers the corresponding wafer W to, for example, the wafer processing chamber 110 on the right side of the middle stage.
  • the wafer W is delivered to the first transfer module 20 from, for example, the load-lock chamber 130 on the left side.
  • the first transfer module 20 which has received the wafer W, moves linearly toward the rear side to the front side of the placement part 4 B on the rear side.
  • the first transfer module 20 changes its movement direction and moves rightward between the placement parts 4 B on the rear side and the wafer transfer arm 5 B on the rear side. Then, after moving to the front side of the placement part 4 B on the right side, the first transfer module 20 changes its movement direction to the rear side and reaches the upper side of the placement part 4 B on the right side. Then, for example, the first transfer module 20 rotates about a vertical axis in-situ and changes its orientation to directly face the placement part 4 B.
  • the first transfer module 20 since the first transfer module 20 has a posture of directly facing the front side when coming out of the load-lock chamber 130 , the first transfer module 20 may be rotated 180 degrees about the vertical axis on the upper side of the placement part 4 .
  • the second transfer module 30 is on standby with a posture of causing the arm portion 32 to face the front side on the rear side of the right side placement part 4 B.
  • the first transfer module 20 moves to the front side.
  • the first transfer module 20 moves leftward between the placement part 4 B on the rear side and the wafer transfer arm 5 B on the rear side. Further, the first transfer module 20 moves linearly to the front side, returns to the rear side of the leftmost load-lock chamber 130 , and stands by.
  • the second transfer module 30 is moved forward to position the arm portion 32 on the placement part 4 B, and the lifting pins 41 of the placement part 4 B are lowered to deliver the wafer W to the arm portion 32 .
  • the second transfer module 30 holding the wafer W performs a transition operation of retreating while changing its orientation when viewed from the placement part 4 B so that the tip end of the arm portion 32 faces the wafer processing chamber 110 on the right side.
  • the gate valve 111 of the wafer processing chamber 110 is opened, and the second transfer module 30 is moved linearly so that the arm portion 32 enters into the wafer processing chamber 110 and delivers the wafer W to the same.
  • the main body portion 31 of the second transfer module 30 is positioned inside the vacuum transfer chamber 120 , and only the arm portion 32 enters into the wafer processing chamber 110 ( FIG. 13 ).
  • the wafer transfer arms 5 A and 5 B and the arm portion 32 are retreated to the vacuum transfer chamber 120 , and the gate valves 111 are closed. Subsequently, the wafers W are sequentially heated by the stages 112 to raise the temperature to a preset temperature, and the processing gas is supplied from a processing gas supplier into the wafer processing chambers 110 . In this way, desired processing is performed on the wafers W.
  • the heating of the wafers W is stopped, and the supply of the processing gas is stopped.
  • the wafer W may be cooled by supplying a cooling gas into the wafer processing chamber 110 as needed. Thereafter, the wafers W are transferred in the reverse procedure of the loading procedure, and the wafers W are returned from the wafer processing chambers 110 to the load-lock chambers 130 .
  • the wafers W in the load-lock chambers 130 are taken out by the wafer transfer mechanism 142 on the atmospheric transfer chamber 140 side and returned to a predetermined carrier C.
  • the first transfer modules 20 when transmitting the wafers W to the wafer processing chambers 110 , transfer the wafers W from the load-lock chambers 130 to the placement parts 4 provided in the vacuum transfer chamber 120 .
  • each of the wafer transfer arms 5 A and 5 B further performs an operation of transferring the wafer W in the front-rear direction. As a result, the load of the operation of transferring wafers W by the wafer transfer arms 5 A and 5 B is increased.
  • An increase in the load on a specific device may restrict the increase in the number of wafers W that can be processed per unit time by the wafer processing system 100 .
  • additional provision of a dedicated wafer transfer arm for transferring the wafer W in the front-rear direction is not realistic since it causes problems of a lack of arrangement space, interference with the other wafer transfer arms 5 A and 5 B, and a restriction on a position where the additional wafer transfer arm is capable of transferring wafers.
  • the transfer of the wafers W from the load-lock chambers 130 to each placement part 4 may be shared by the first transfer modules 20 . Therefore, the wafer transfer arms 5 only have to share the transfer of the wafers W between the placement parts 4 and the wafer processing chambers 110 . Therefore, an increase in the load on the wafer transfer arms 5 can be suppressed.
  • a plurality of placement parts 4 are arranged along the alignment of the wafer processing chambers 110 and the wafer transfer arms 5 .
  • the wafer W transfer operation by the wafer transfer arms 5 and the first transfer modules 20 may be efficiently executed while securing the movement space of the first transfer modules 20 .
  • the floor-side coils 15 may also be installed on the floor portions of the wafer processing chambers 110 so that the first transfer modules 20 can directly enter into the wafer processing chambers 110 to transfer the wafers W.
  • each of the first and second transfer modules 20 and 30 having different allowable temperatures may be used depending on the temperatures of the wafers W before and after processing in the wafer processing chambers 110 .
  • the orientations of the notches or OFs may differ from each other by 180 degrees between the wafer processing chambers 110 on the left and right sides.
  • the first transfer modules 20 may also be used for alignment of notches or OFs.
  • the illustration of the wafer transfer arms 5 is omitted for the sake of convenience in illustration.
  • notch alignment it is assumed that the wafer W in which a notch has been aligned by alignment is disposed as illustrated in FIG. 14 .
  • the wafer W is rotated by 180 degrees about a vertical axis with respect to a preset orientation.
  • the first transfer module 20 holding the wafer W enters into the vacuum transfer chamber 120 from the load-lock chamber 130 , the first transfer module 20 is rotated by 180 degrees about the vertical axis as illustrated in FIG. 15 . Then, by delivering the wafer W to the placement part 4 as illustrated in FIG. 16 , the direction of the wafer W to be delivered to the placement part 4 can be rotated by 180 degrees. In addition, the first transfer module 20 retreats from the position of the placement part 4 , rotates by 180 degrees about the vertical axis, returns to the rear side of the leftmost load-lock chamber 130 , and stands by ( FIG. 16 ). By using the first transfer module 20 based on the magnetic levitation in this way, there is no need to provide a separate notch alignment device in the wafer processing system 100 .
  • FIGS. 17 and 18 illustrate examples of a placement module 400 that constitutes a substrate delivery part disposed on the placement part 4 .
  • This placement module 400 is configured to be rotatable about a vertical axis by using magnetic levitation.
  • This placement module 400 includes two stages 401 and 402 so that the wafers W can be placed vertically in two stages.
  • the lower stage 401 includes a base 411 , and a holder 403 configured to hold the center of the bottom surface of the wafer W is provided above the base 411 .
  • the holder 403 is configured to deliver the wafer W to and from the wafer holder 53 of each first transfer module 20 .
  • the upper stage 402 includes a cylindrical portion 412 surrounding the lower stage 401 .
  • a holder 404 configured to hold the center of the bottom surface of the wafer W is provided above the cylindrical portion 412 .
  • Two windows 405 are formed at positions facing each other on the side surface of the cylindrical portion 412 to deliver the wafer W to the lower stage 401 .
  • the holder 404 is also configured to deliver the wafer W to and from the wafer holder 53 of each first transfer module 20 .
  • module-side coils 35 which are substrate delivery part-side magnets, are provided at each of lower ends of the base 411 of the stage 401 and the cylindrical portion 412 of the stage 402 .
  • Each of the stages 401 and 402 is configured to be independently rotatable about a vertical axis by using the repulsive force between the module-side coils 35 and the floor-side coils 15 provided in the floor portion 10 of the vacuum transfer chamber 12 .
  • the orientation of the wafer W can be changed when the wafer is held by the first transfer module 20 and when the wafer is held by the wafer transfer arm 5 .
  • the operations of transferring and rotating the wafers W may be shared by providing dedicated placement modules 400 .
  • FIG. 19 illustrates an example of aligning the wafer W by using a transfer module using magnetic levitation.
  • a transfer module 60 illustrated in FIG. 19 includes a main body portion 61 provided with module-side coils 35 and a column portion 62 that extends upward from an upper surface of the main body portion 61 and has a diameter smaller than that of the wafer W.
  • a substrate holding surface serving as a substrate holder is formed on the upper surface of the column portion 62 .
  • the wafer W is supported from the bottom surface side by the substrate holding surface.
  • a wafer sensor 6 for alignment is used.
  • the wafer sensor is a detector provided with a light receiver configured to emit light downward and receive the light on the lower side.
  • the wafer sensor 6 detects a position of a periphery of the wafer W located outside the column portion 62 .
  • the wafer sensor 6 is provided in, for example, the load-lock chamber 130 .
  • the wafer W is delivered to the transfer module 60 from the atmospheric transfer chamber 140 side, and the gate valve 133 on the atmospheric transfer chamber 140 side is closed.
  • the transfer module 60 is moved such that the periphery of the wafer W is located on an optical path of the wafer sensor 6 .
  • the transfer module 60 is rotated about a vertical axis in-situ. As a result, the wafer W rotates about the central axis passing through its center, and alignment is performed while the position of the periphery of the rotating wafer W is detected.
  • the installation of the alignment chamber 150 illustrated in FIG. 1 may be omitted, which makes it possible to miniaturize the wafer processing system 100 .
  • the alignment can be performed while the interior of the load-lock chamber 130 is switched to a vacuum, the number of wafers W processed per unit time can be increased compared to, for example, an example in which the wafers W are transferred to the alignment chamber 150 where the alignment is performed.
  • the wafer sensor 6 may be installed in the movement region of the transfer module 60 , such as the atmospheric transfer chamber 140 or the vacuum transfer chamber 120 .
  • the alignment may be performed at each installation location.
  • the above-described transfer module 60 also corresponds to a substrate transfer module of the present example, and may transfer the wafer in the vacuum transfer chamber 120 instead of or together with either of the above-described first and second transfer modules 20 and 30 .
  • the lifting pins 41 of the placement parts 4 are arranged at positions where the bottom surface of the wafer W can be supported around the column portion 62 .
  • each of the above-described transfer modules 20 , 30 , and 60 may be provided with an accelerometer or a thermometer to detect vibration of the wafer W during transfer or to detect an increase in temperature of the wafer W.
  • a measured value of acceleration or temperature may be transmitted to the controller 9 .
  • a breakdown of the transfer module 20 , 30 , or 60 may be self-diagnosed, for example, when the measured acceleration value exceeds a threshold value or when the measured temperature value exceeds a threshold value. Further, an abnormality in processing process of the wafer W may be detected when the measured temperature value of the wafer W exceeds a threshold value.
  • a camera configured to monitor the interior of the vacuum transfer chamber 120 may be provided on the first transfer module 20 of a disk shape. For example, by capturing an image of the interior of the vacuum transfer chamber 120 , it is possible to identify whether or not an abnormality in the vacuum transfer chamber 120 has occurred.
  • the first transfer module 20 may enter into the wafer processing chamber 110 to capture an image of the interior of the wafer processing chamber 110 and to identify an abnormality.
  • the accuracy of teaching or transfer of the wafer W may be identified by capturing the stage 112 and the wafer W placed on the stage 112 and identifying the position of the wafer W and the position of the stage 112 .
  • a laser displacement meter or an encoder may be installed to further improve the accuracy in position identification.
  • a capturing module that is movable in the vacuum transfer chamber 120 by magnetic levitation may be provided separately from the above-described transfer modules 20 , 30 , and 60 , and a camera may be installed on the capturing module.
  • FIGS. 20 and 21 illustrate an example in which magnets are provided on the ceiling (ceiling surface) side of a substrate transfer chamber (e.g., the above-described vacuum transfer chamber 120 ) in which the wafer W is transferred and a module that moves along the ceiling by magnet attraction is provided.
  • a gas ejection module 7 will be described as an example of such a module.
  • the gas ejection module 7 includes a housing 70 . Inside the housing 70 , there is provided a gas reservoir 71 in which, for example, a nitrogen (N 2 ) gas, which is a cleaning gas, is stored.
  • a nitrogen (N 2 ) gas which is a cleaning gas
  • a plurality of gas ejection holes 72 are formed in a bottom surface side of the housing 70 and configured such that the N 2 gas stored in the gas reservoir 71 is ejected from the gas ejection holes 72 via a pipe 73 .
  • V 73 indicates a valve provided in the pipe 73 .
  • Module-side coils 35 are provided in a ceiling plate of the housing 70 , and ceiling surface-side coils 16 are installed on a ceiling surface 11 of the vacuum transfer chamber 120 .
  • the ceiling surface-side coils 16 correspond to a third magnet
  • the module-side coil 35 corresponds to a fourth magnet. Then, the module-sides coils 35 and the ceiling surface-side coils 16 magnetically attract the gas ejection module 7 below the ceiling surface 11 in the vacuum transfer chamber 120 by magnetic attraction.
  • the gas ejection module 7 configured as described above ejects the N 2 gas, for example, while moving in the vacuum transfer chamber 120 as illustrated in FIG. 21 .
  • a downward flow of a cleaning gas is formed toward the wafer W in the vacuum transfer chamber 120 .
  • particles 93 drifting in the vacuum transfer chamber 120 and corrosive gas 94 generated during processing in the wafer processing chamber 110 can be suppressed from adhering to the wafer W, and can be exhausted from an exhaust port 90 together with the flow of the N 2 gas.
  • the gas ejection module 7 may be moved following the transfer module 20 or 30 so as to continuously eject the N 2 gas onto the wafer W held by the transfer module 20 or 30 .
  • the wafer W under transfer can be covered with the N 2 gas, and the wafer W can be prevented from being oxidized by a gas drifting in a transfer path.
  • a temperature control module that houses a heater or the like may be used as a module that is provided on the ceiling surface side and moves. For example, together with the wafer W transferred by the first transfer module 20 that moves along the floor, by positioning and moving the temperature adjustment module disposed above the wafer W, the temperature of the wafer W can be adjusted while the wafer W is being transferred.
  • a module that moves along the ceiling may be provided with a shelf-like wafer placement part, and the wafers W may be transferred by using the module.
  • FIG. 22 illustrates an example in which a protrusion 22 is provided on a side surface of the first transfer module 20 .
  • a recess 23 into which the protrusion 22 may be inserted is provided on the side surface opposite to the protrusion 22 .
  • the protrusions 22 of the first transfer modules 20 are configured to be inserted into and connected to respective recesses of other first transfer modules 20 .
  • the protrusions 22 and the recesses 23 constitute a connection mechanism.
  • the broken first transfer module 20 can be transferred by the other first transfer modules 20 .
  • FIG. 24 illustrates an example in which a load-lock chamber 200 is provided on a rear sidewall portion of the vacuum transfer chamber 120 .
  • Reference numeral 201 in FIG. 24 denotes a gate valve, and reference numeral 202 denotes an outlet of the first transfer module 20 .
  • the above-described load-lock chamber 200 may be used as an accommodation chamber for storing transfer modules 20 , 30 , and 60 that are not in use.
  • the number of transfer modules 20 , 30 , and 60 used in the vacuum transfer chamber 120 may be adjusted depending on the throughput of the processing performed in the wafer processing system 100 . Further, the number of transfer modules 20 , 30 , and 60 disposed in the vacuum transfer chamber 120 may be increased or decreased via the load-lock chamber 200 .
  • the transfer modules 20 , 30 , and 60 may be used to transfer components to be installed in the vacuum transfer chamber 120 or the wafer processing chambers 110 .
  • FIG. 25 illustrates an example of transferring a focus ring 113 by first transfer modules 20 .
  • the wafer transfer arm 5 may receive the focus ring 113 from the first transfer modules 20 , load the focus ring 113 into the wafer processing chamber 110 , and install the focus ring 113 on the stage 112 .
  • an internal component or member may be replaced and installed without opening the wafer processing chamber 110 .
  • the first transfer modules 20 may be configured to have a rectangular planar shape. On the other hand, by using the transfer modules 20 having a circular planar shape, an area required for rotation of the transfer modules 20 can be reduced, and an area of the vacuum transfer chamber 120 can be reduced.
  • the delivery of the wafer W between the first transfer module 20 and the wafer transfer arm 5 may be performed directly between the first transfer module 20 and the wafer transfer arm 5 without using the placement part 4 .
  • lifting pins that move up and down from the surface of the stage 2 of the first transfer module 20 are provided. Then, the lifting pins may be used to raise/lower the wafer W placed on the first transfer module 20 to deliver the wafer to and from the wafer transfer arm 5 .
  • the number and layout of wafer processing chambers 110 disposed in the vacuum transfer chamber 120 are not limited to the example illustrated in FIG. 1 .
  • the number of wafer processing chambers 110 disposed in the vacuum transfer chamber 120 may be increased or decreased as needed.
  • the case in which only one wafer processing chamber 110 is provided in the vacuum transfer chamber 120 is also included in the technical scope of the present disclosure.
  • the vacuum transfer chamber 120 having a rectangular planar shape is not limited to the case in which the long sides of the vacuum transfer chamber 120 are arranged in the front-rear direction as illustrated in FIG. 1 .
  • the vacuum transfer chamber 120 may be arranged with the long sides being oriented in the left-right direction when viewed from the side of the load ports 141 .
  • planar shape of the vacuum transfer chamber 120 may be adopted depending on the shape of the area in which the wafer processing system 100 is arranged.
  • the planar shape may be a square, a polygon with five sides or more, a circle, or an ellipse.
  • the substrate transfer chambers in which the wafers W are transferred to the wafer processing chambers 110 by using the transfer modules 20 , 30 , and 60 are not limited to the case in which the substrate transfer chamber is constituted with the vacuum transfer chamber 120 whose interior is kept in a vacuum atmosphere.
  • the transfer modules 20 , 30 , and 60 of the present disclosure may also be applicable to a wafer processing system in which the wafer processing chamber 110 is provided on a side of a substrate transfer chamber whose interior is kept in an atmospheric pressure atmosphere. In this case, providing the wafer processing system with the load-lock chamber 130 is not essential, and the wafer W taken out from the carrier C into the atmospheric transfer chamber 140 may be directly loaded into the substrate transfer chamber.
  • a vacuum transfer chamber 120 A and another vacuum transfer chamber 120 B may be connected to each other by a communication path 8 .
  • a communication path 8 For example, as illustrated in FIG. 26 , one end of a communication path 8 is connected to a left side of the vacuum transfer chamber 120 A, and the other end of the communication path 8 is connected to a right side of another vacuum transfer chamber 120 B.
  • the vacuum transfer chamber 120 B has the same configuration as the vacuum transfer chamber 120 A except that the load-lock chambers 130 are not provided on the front side.
  • the floor-side coils 15 are also installed on a floor of the communication path 8 so that the transfer modules 20 , 30 , and 60 can move through the floor-side coils 15 .
  • the load-lock chamber 130 , the atmospheric transfer chamber 140 , and the load port 141 may be shared.
  • the wafer transfer arm 5 when, for example, only the wafer transfer arm 5 is employed as a wafer transfer mechanism that fixes the space between the vacuum transfer chambers 120 A and 120 B to the bottom surface, a large space for turning is required. In addition, since a transferable distance is limited, it may be necessary to provide a plurality of transfer mechanisms for transferring to a distant point.
  • the range in which the floor-side coils 15 can be installed can be relatively freely adjusted.
  • the range in which one transfer module 20 , 30 , or 60 is movable can be freely set, so that a degree of freedom in apparatus design is increased.
  • the wafers W may be levitated by the magnetic force and transferred in the vacuum transfer chamber 120 only by the transfer modules 20 , 30 , and 60 .
  • FIG. 27 illustrates a wafer processing system 101 in which wafers W are transferred by using only the above-described second transfer module 30 (hereinafter, also simply referred to as “transfer module 30 ”).
  • transfer module 30 each length in the short side direction of a rectangular vacuum transfer chamber 160 in a plan view forms a width that allows two transfer modules 30 , each of which holds a wafer W, to pass therethrough in a state of being aligned side by side.
  • the length of the vacuum transfer chamber 160 in the short side direction in this example is smaller than the length from the main body portion 31 to the tip of the wafer W when the transfer module 30 holds the wafer W (the total length of the transfer module 30 in the state of holding the wafer W).
  • the wafers W are transferred by using two transfer modules 30 provided in the vacuum transfer chamber 160 .
  • two load-lock chambers 130 are arranged on the left and right.
  • four wafer processing chambers 110 are arranged on each of the left and right sides of the vacuum transfer chamber 160 . That is, the wafers W will be loaded into the wafer processing chambers 110 in a direction crossing the long side direction of the vacuum transfer chamber 160 (the short side direction).
  • the length of the vacuum transfer chamber 160 in the short side direction is shorter than the total length of the transfer module 30 in a state of holding the wafer W.
  • the transfer module 30 when the transfer module 30 is used to perform the loading/unloading of the wafer W, it is necessary to perform a transition operation in which a linear movement along the long side direction of the vacuum transfer chamber 160 and a curvilinear movement for entering into or retreating from the vacuum transfer chamber 160 while changing the orientation of the transfer module 30 are combined.
  • a space 161 is provided for performing the transition operation at the time of switching the transfer module 30 when the wafer W is loaded into the wafer processing chamber 110 in the rearmost stage. That is, the space 161 is provided to protrude beyond the wafer processing chambers 110 in the rearmost stage (specifically, the positions of the gate valves 111 of the wafer processing chambers 110 in the rear stage).
  • the above-described transition operation may be performed using a space that expands on the front side of the above-described space 161 in the vacuum transfer chamber 160 .
  • the transfer modules 30 move on left and right tracks when viewed from the front side along the long side direction of the vacuum transfer chamber 160 in a posture in which arm portions 32 are directed toward the load-lock chambers 130 (the front side) within the vacuum transfer chamber 160 .
  • the transfer module 30 moves rearward toward the rear side as it is in a posture in which the arm portion 32 is directed toward the front side (see also an arrow indicating a traveling direction illustrated together with the transfer module 30 on the left side when viewed from the front side in FIG. 27 ).
  • the transfer module 30 holding the wafer W moves to a position where the gate valve 111 of the wafer processing chamber 110 in the rearmost stage is provided.
  • the main body portion 31 of the transfer module 30 passes through the position where the gate valve 111 is disposed and reaches the space 161 on the rear side.
  • the tip side of the arm portion 32 holding the wafer W is disposed in the vicinity of the gate valve 111 .
  • the gate valve 111 is opened, and the movement direction of the transfer module 30 is switched to a forward movement while rotating to insert the wafer W into the wafer processing chamber 110 ( FIG. 29 ). Thereafter, when the transfer module 30 is in the state of directly facing the wafer processing chamber 110 , the transfer module 30 stops the rotation and moves linearly until the wafer W reaches the upper side of the stage 112 .
  • the transfer module 30 takes a posture in which the arm portion 32 is directed to the left side when viewed from the front side ( FIG. 30 ). Then, the wafer W is delivered to the stage 112 and the transfer module 30 is retreated from the wafer processing chamber 110 . In addition, the gate valve 111 is closed, and the wafer W is processed.
  • the transfer module 30 causes the arm portion 32 to enter into the wafer processing chamber 110 again to receive the processed wafer W.
  • the transition operation in which the transfer module 30 is switched between the rearward movement and the forward movement while rotating, is performed in a reverse order of the operation at the time of loading to unload the wafer W. Thereafter, the transfer module moves toward the front side and transfers the wafer W to the left load-lock chamber 130 .
  • the transition operation described above with reference to FIGS. 28 to 33 is also used.
  • the space 161 is provided on the rear side of the vacuum transfer chamber 160 to change the direction of the transfer module 30 while performing the transition operation of the transfer module 30 .
  • a width in the short side direction of the vacuum transfer chamber 160 may be made smaller than the total length of the transfer module 30 in the state of holding the wafer W. Therefore, the area of the floor of the vacuum transfer chamber 160 can be reduced.
  • the transition operation can be performed using the space that expands on the front side of the space 161 in the vacuum transfer chamber 160 .
  • the wafer processing system 101 is not provided with the wafer transfer arms 5 or the placement parts 4 in the vacuum transfer chamber 160 , the height dimension of the vacuum transfer chamber 160 can be reduced compared to the case where the wafer transfer arms 5 or the placement parts 4 are provided.

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US18/273,446 2021-01-25 2022-01-12 Apparatus for transferring substrate, substrate processing system and method of processing substrate Pending US20240120225A1 (en)

Applications Claiming Priority (3)

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JP2021-009861 2021-01-25
JP2021009861A JP2022113548A (ja) 2021-01-25 2021-01-25 基板の搬送を行う装置、基板を処理するシステム及び基板を処理する方法
PCT/JP2022/000747 WO2022158351A1 (ja) 2021-01-25 2022-01-12 基板の搬送を行う装置、基板を処理するシステム及び基板を処理する方法

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TWI732285B (zh) 2015-01-23 2021-07-01 美商應用材料股份有限公司 半導體處理設備
EP3405973A1 (en) * 2016-01-18 2018-11-28 Applied Materials, Inc. Apparatus for transportation of a substrate carrier in a vacuum chamber, system for vacuum processing of a substrate, and method for transportation of a substrate carrier in a vacuum chamber
US20190292653A1 (en) * 2016-05-18 2019-09-26 Stefan Bangert Apparatus and method for transportation of a deposition source
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