US20220128768A1 - Optical device package and method for manufacturing the same - Google Patents
Optical device package and method for manufacturing the same Download PDFInfo
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- US20220128768A1 US20220128768A1 US17/568,510 US202217568510A US2022128768A1 US 20220128768 A1 US20220128768 A1 US 20220128768A1 US 202217568510 A US202217568510 A US 202217568510A US 2022128768 A1 US2022128768 A1 US 2022128768A1
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- device package
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- 230000003287 optical effect Effects 0.000 title claims abstract description 133
- 238000004519 manufacturing process Methods 0.000 title description 11
- 238000000034 method Methods 0.000 title description 10
- 239000000758 substrate Substances 0.000 claims abstract description 86
- 239000004065 semiconductor Substances 0.000 claims abstract description 77
- 230000003746 surface roughness Effects 0.000 claims abstract description 11
- 239000013307 optical fiber Substances 0.000 claims description 7
- 241000237509 Patinopecten sp. Species 0.000 claims 1
- 235000020637 scallop Nutrition 0.000 claims 1
- 125000006850 spacer group Chemical group 0.000 description 27
- 238000005530 etching Methods 0.000 description 16
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- 238000010586 diagram Methods 0.000 description 10
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
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Images
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/46—Processes or apparatus adapted for installing or repairing optical fibres or optical cables
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/36—Mechanical coupling means
- G02B6/3628—Mechanical coupling means for mounting fibres to supporting carriers
- G02B6/3632—Mechanical coupling means for mounting fibres to supporting carriers characterised by the cross-sectional shape of the mechanical coupling means
- G02B6/3636—Mechanical coupling means for mounting fibres to supporting carriers characterised by the cross-sectional shape of the mechanical coupling means the mechanical coupling means being grooves
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/36—Mechanical coupling means
- G02B6/3628—Mechanical coupling means for mounting fibres to supporting carriers
- G02B6/3648—Supporting carriers of a microbench type, i.e. with micromachined additional mechanical structures
- G02B6/3652—Supporting carriers of a microbench type, i.e. with micromachined additional mechanical structures the additional structures being prepositioning mounting areas, allowing only movement in one dimension, e.g. grooves, trenches or vias in the microbench surface, i.e. self aligning supporting carriers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4256—Details of housings
- G02B6/4257—Details of housings having a supporting carrier or a mounting substrate or a mounting plate
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/44—Mechanical structures for providing tensile strength and external protection for fibres, e.g. optical transmission cables
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/36—Mechanical coupling means
- G02B6/3628—Mechanical coupling means for mounting fibres to supporting carriers
- G02B6/3632—Mechanical coupling means for mounting fibres to supporting carriers characterised by the cross-sectional shape of the mechanical coupling means
- G02B6/3636—Mechanical coupling means for mounting fibres to supporting carriers characterised by the cross-sectional shape of the mechanical coupling means the mechanical coupling means being grooves
- G02B6/364—Mechanical coupling means for mounting fibres to supporting carriers characterised by the cross-sectional shape of the mechanical coupling means the mechanical coupling means being grooves inverted grooves, e.g. dovetails
Definitions
- the present disclosure relates to an optical device package and manufacturing method thereof, and more particularly, to an optical device package including a groove with a vertical sidewall profile for disposing an optical device and manufacturing method thereof.
- An optical communication device uses a substrate with V-shaped groove to dispose optical fiber.
- the V-shaped groove however, has a larger aperture dimension in the surface of the substrate and larger depth in the substrate.
- the V-shaped groove occupies a large amount of the substrate, which impedes the trend toward miniaturization of optical communication devices.
- an optical device package includes a semiconductor substrate and an optical device.
- the semiconductor substrate has a first surface, a second surface different in elevation from the first surface, and a profile connecting the first surface to the second surface.
- a surface roughness of the profile is greater than a surface roughness of the second surface.
- the optical device is disposed on the second surface and surrounded by the profile.
- an optical device package includes a semiconductor substrate, a spacer and an optical device.
- the semiconductor substrate has a first surface, and a second surface connected to the first surface. The second surface is inclined with respect to the first surface.
- the spacer is disposed adjacent to the second surface.
- the spacer has a first edge substantially perpendicular to the first surface of the semiconductor substrate.
- the optical device is surrounded by the first edge of the spacer.
- a method for manufacturing an optical device package is provided.
- a semiconductor substrate is received.
- the semiconductor substrate is patterned to form a trench in the semiconductor substrate.
- a patterned sacrificial layer is formed over the semiconductor substrate, wherein the patterned sacrificial layer covers a portion of the semiconductor substrate, fills in the trench, and exposes another portion of the semiconductor substrate.
- the semiconductor substrate exposed from the patterned sacrificial layer is partially removed to form a groove in the semiconductor substrate.
- the patterned sacrificial layer is removed from the semiconductor substrate.
- FIG. 1 is a cross-sectional view of an optical device package in accordance with some embodiments of the present disclosure.
- FIG. 1A is a top view of an optical device package in accordance with some embodiments of the present disclosure.
- FIG. 1B , FIG. 1C , FIG. 1D , FIG. 1E , FIG. 1F and FIG. 1G are schematic diagrams illustrating optical device packages in accordance with some other embodiments of the present disclosure.
- FIG. 2A , FIG. 2B , FIG. 2C , FIG. 2D and FIG. 2E are schematic diagrams illustrating a method of fabricating an optical device package in accordance with some embodiments of the present disclosure.
- FIG. 3 is a cross-sectional view of an optical device package in accordance with some embodiments of the present disclosure.
- FIG. 4A , FIG. 4B , FIG. 4C and FIG. 4D are schematic diagrams illustrating a method of fabricating an optical device package in accordance with some embodiments of the present disclosure.
- FIG. 5 is a schematic diagram illustrating an optical device package in accordance with some other embodiments of the present disclosure.
- FIG. 6 is a cross-sectional view of an optical device package 100 in accordance with some embodiments of the present disclosure.
- FIG. 7A , FIG. 7B and FIG. 7C are schematic diagrams illustrating a method of fabricating an optical device package in accordance with some embodiments of the present disclosure.
- FIG. 8 is a cross-sectional view of an optical device package in accordance with some embodiments of the present disclosure.
- first and second features are formed or disposed in direct contact
- additional features are formed or disposed between the first and second features, such that the first and second features are not in direct contact
- present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.
- FIG. 1 is a cross-sectional view of an optical device package 1 in accordance with some embodiments of the present disclosure
- FIG. 1A is a top view of an optical device package 1 in accordance with some embodiments of the present disclosure.
- the optical device package 1 includes a semiconductor substrate 10 , and an optical device 20 .
- the semiconductor substrate 10 may include a silicon substrate, or a substrate made from another semiconductive material.
- the semiconductor substrate 10 has a first surface 101 , a second surface 102 different in elevation from the first surface 101 , and a profile 103 connecting the first surface 101 to the second surface 102 .
- the second surface 102 is lower than the first surface 101 , and the first surface 101 , the second surface 102 and the profile 103 collectively form a groove 10 V for disposing the optical device 20 .
- the first surface 101 and the second surface 102 may be substantially parallel to each other.
- a protection layer 12 can be disposed on the first surface 101 .
- the protection layer 12 may be configured as a mask layer such as a hard mask layer to protect the semiconductor substrate 10 .
- the material of the protection layer 12 may include silicon oxide, silicon nitride, or other suitable inorganic and/or organic materials.
- the profile 103 of the semiconductor substrate 10 may include a first side surface 1031 , a second side surface 1032 and a third surface 1033 .
- the first side surface 1031 is connected to the first surface 101 .
- the second side surface 1032 is connected to the second surface 102 .
- the third surface 1033 is disposed between and connected to the first side surface 1031 and the second side surface 1032 .
- the second surface 102 is higher than the third surface 1033 .
- the third surface 1033 may be substantially parallel to the second surface 102 .
- the first side surface 1031 and the second side surface 1032 may be substantially perpendicular to the third surface 1033 .
- the optical device 20 is disposed on the second surface 102 and surrounded by the profile 103 .
- the optical device 20 may include a tubular optical device having a curved outer surface, and extending along a direction D as shown in FIG. 1A .
- the optical device 20 may include an optical fiber or the like.
- the optical device 20 is in contact with the second surface 102 of the semiconductor substrate 10 .
- the optical device 20 may be partially or entirely surrounded by the profile 103 , depending on the height of the optical device 20 .
- the optical device 20 is in contact with the profile 103 of the semiconductor substrate 10 .
- the optical device 20 may be in contact with the first side surface 1031 of the profile 103 .
- the first side surface 1031 may be substantially vertical with respect to the first surface 101 of the semiconductor substrate 10 .
- the included angle between the first side surface 1031 and the first surface 101 of the semiconductor substrate 10 substantially ranges from about 88° to about 92°, for example, about 90°.
- the dimension of the groove 10 V proximal to the first surface 101 and the dimension of the groove 10 V proximal to the second surface 102 are substantially the same. Accordingly, the overall space of the groove 10 V can be reduced, which facilitates miniaturization of the optical device package 1 .
- the optical device 20 can be securely fastened in the groove 10 V.
- FIG. 2A , FIG. 2B , FIG. 2C , FIG. 2D and FIG. 2E are schematic diagrams illustrating a method of fabricating an optical device package in accordance with some embodiments of the present disclosure.
- a semiconductor substrate 10 is received.
- a protection layer 12 is formed on a first surface 101 of the semiconductor substrate 10 .
- the protection layer 12 may be configured as a hard mask layer, partially covering the first surface 101 .
- a patterned sacrificial layer 14 such as a photoresist layer is formed over the semiconductor substrate 10 .
- the patterned sacrificial layer 14 includes openings 14 H exposing a portion of the first surface 101 .
- the semiconductor substrate 10 is patterned to form trenches 10 T in the semiconductor substrate 10 .
- the semiconductor substrate 10 is patterned through the openings 14 H of the patterned sacrificial layer 14 by an anisotropic etching such as dry etching.
- the dry etching may include plasma etching or the like.
- the anisotropic etching is selected to form the trenches 10 T such that the verticality of the sidewall of trench 10 T can be maintained, particularly when the depth of the trench 10 T is larger.
- the depth of the trench 10 T is greater than 200 micrometers (um) such as 250 um.
- the included angle between the sidewall of the trench 10 T and the first surface 101 of the semiconductor substrate 10 substantially ranges from about 88° to about 92°, for example, about 90°.
- the bottom and the sidewalls of the trench 10 T have rough surfaces when the trench 10 T is formed by anisotropic etching.
- the patterned sacrificial layer 14 is removed from the semiconductor substrate 10 after the trench 10 T is formed.
- another patterned sacrificial layer 16 such as a photoresist layer is formed over the semiconductor substrate 10 .
- the patterned sacrificial layer 16 may cover a portion of the semiconductor substrate 10 and fill in the trench 10 T.
- the patterned sacrificial layer 16 includes openings 16 H exposing another portion of the semiconductor substrate 10 , for example the portion of the semiconductor substrate 10 between the trenches 10 T.
- the semiconductor substrate 10 exposed from the patterned sacrificial layer 16 is partially removed to form a groove 10 V in the semiconductor substrate 10 .
- the semiconductor substrate 10 is partially removed through the openings 16 H of the patterned sacrificial layer 16 by an isotropic etching such as wet etching.
- the isotropic etching is selected to form the groove 10 V, so as to remove defects and residues at the bottom of the groove 10 V.
- the sidewall of the trench 10 T is covered and protected by the patterned sacrificial layer 16 . Accordingly, the verticality of the sidewalls of the trench 10 T can be maintained without being damaged by the etchant of the isotropic etching.
- the surface of the bottom of the groove 10 V formed by isotropic etching is flatter, and thus the uniformity of the groove 10 V can be increased.
- the patterned sacrificial layer 16 is removed from the semiconductor substrate 10 .
- the semiconductor substrate 10 has a first surface 101 , a second surface 102 lower in elevation than the first surface 101 , and a profile 103 connecting the first surface 101 to the second surface 102 .
- the profile 103 includes a first side surface 1031 , a second side surface 1032 and a third surface 1033 .
- the first side surface 1031 is connected to the first surface 101 .
- the second side surface 1032 is connected to the second surface 102 .
- the third surface 1033 is disposed between and connected to the first side surface 1031 and the second side surface 1032 .
- the third surface 1033 is lower than the second surface 102 .
- the third surface 1033 may be substantially parallel to the second surface 102 .
- the first side surface 1031 and the second side surface 1032 may be substantially perpendicular to the third surface 1033 .
- An optical device 20 is disposed in the groove 10 V to form the optical device package 1 as illustrated in FIG. 1 and FIG. 1A .
- the groove 10 V may be formed by multi-stage etching to improve the verticality of the sidewall of the groove 10 V (first side surface 1031 ), and to improve the uniformity of the bottom of the groove 10 V (second surface 102 ).
- Optical device packages provided by the present disclosure are not limited to the above-described embodiments, and may include other, different embodiments, such as those described below. To simplify the description and for convenient comparison between each of the embodiments of the present disclosure, the same or similar components in each of the following embodiments are marked with the same numerals and are not redundantly described.
- FIG. 1B , FIG. 1C , FIG. 1D , FIG. 1E , FIG. 1F and FIG. 1G are schematic diagrams illustrating optical device packages 2 , 3 , 4 , 5 , 6 and 7 in accordance with some other embodiments of the present disclosure.
- the second surface 102 and the profile 103 of the groove 10 V of the optical device package 2 are rough.
- the profile 103 and the second surface 102 are formed by different etching processes as previously described, and thus may have different roughness.
- the surface roughness of the profile 103 is greater than the surface roughness of the second surface 102 .
- a ratio of the surface roughness of the profile 103 to the surface roughness of the second surface 102 may substantially range from about 10 to about 40.
- the surface roughness may be measured in terms of arithmetic mean roughness.
- the arithmetic mean roughness Ra of the profile 103 may substantially range from about 100 nanometers (nm) to about 200 nm
- the arithmetic mean roughness Ra of the second surface 102 may substantially range from about 5 nm to about 10 nm.
- the second surface 102 of the groove 10 V of the optical device package 3 may be recessed and curved.
- the recessed and curved second surface 102 may fit in the contour of the optical device 20 , and thus the optical device 20 can be securely fastened in the groove 10 V.
- the groove 10 V of the optical device package 4 is deeper, and the second surface 102 may be substantially level with the third surface 1033 of the profile 103 .
- the second surface 102 of the groove 10 V of the optical device package 5 may be recessed and curved.
- the recessed and curved second surface 102 may fit in the contour of the optical device 20 , and thus the optical device 20 can be securely fastened in the groove 10 V.
- the second surface 102 of the groove 10 V of the optical device package 6 is lower than the third surface 1033 of the profile 103 .
- the second surface 102 of the groove 10 V of the optical device package 7 may be recessed and curved.
- the recessed and curved second surface 102 may fit in the contour of the optical device 20 , and thus the optical device 20 can be securely fastened in the groove 10 V.
- FIG. 3 is a cross-sectional view of an optical device package 8 in accordance with some embodiments of the present disclosure.
- the optical device package 8 includes a semiconductor substrate 50 , a spacer 60 and an optical device 70 .
- the semiconductor substrate 50 may include a silicon substrate, or a substrate made from another semiconductive material.
- the semiconductor substrate 50 has a first surface 501 and a second surface 502 connected to the first surface 501 .
- the second surface 502 is inclined with respect to the first surface 501 .
- the second surface 502 is inclined inwardly with respect to the first surface 501 .
- the semiconductor substrate 50 may further include a third surface 503 lower than the first surface 501 and connected to the second surface 502 .
- a protection layer 52 can be disposed on the first surface 501 .
- the protection layer 52 may be configured to protect the semiconductor substrate 10 .
- the material of the protection layer 52 may include silicon oxide, silicon nitride, or other suitable inorganic and/or organic materials.
- the spacer 60 is disposed adjacent to the second surface 502 .
- the spacer 60 has a first edge 601 substantially perpendicular to the first surface 501 of the semiconductor substrate 50 .
- the spacer 60 has a second edge 602 in contact with the second surface 502 of the semiconductor substrate 50 .
- the material of the spacer 60 may include a photosensitive material, which can be patterned by exposure and development.
- the material of the spacer 60 may include photoresist material or the like.
- the first surface 501 , the third surface 503 and the first edge 601 of the spacer 601 collectively form a groove 50 V for disposing the optical device 70 .
- the optical device 70 is surrounded by the first edge 601 of the spacer 60 .
- the optical device 70 may include a tubular optical device having a curved outer surface.
- the optical device 70 may include an optical fiber or the like.
- the optical device 70 is in contact with the first edge 601 .
- the optical device 20 may be partially or entirely surrounded by the first edge 601 , depending on the height of the optical device 70 .
- the optical device 70 may be disposed on and supported by the third surface 503 of the semiconductor substrate 50 .
- the first edge 601 of the spacer 60 may be substantially vertical with respect to the first surface 501 of the semiconductor substrate 50 . With the vertical first edge 601 , the optical device 70 can be securely fastened in the groove 50 V, and miniaturization of the optical device package 8 can be realized.
- FIG. 4A , FIG. 4B , FIG. 4C and FIG. 4D are schematic diagrams illustrating a method of fabricating an optical device package in accordance with some embodiments of the present disclosure.
- a semiconductor substrate 50 is received.
- a protection layer 52 is formed on a first surface 501 of the semiconductor substrate 50 .
- the protection layer 52 may be configured as a hard mask layer, partially covering the first surface 501 .
- a patterned sacrificial layer 54 such as a photoresist layer is formed over the semiconductor substrate 50 .
- the patterned sacrificial layer 54 includes openings 54 H exposing a portion of the first surface 501 .
- the semiconductor substrate 50 is patterned to form a groove 50 V in the semiconductor substrate 50 .
- the semiconductor substrate 50 is patterned through the openings 54 H of the patterned sacrificial layer 54 by an isotropic etching such as wet etching.
- the etching of the semiconductor substrate 50 is controlled such that the second surface 502 is inclined inwardly with respect to the first surface 501 .
- the groove 50 V may have a trapezoidal cross-sectional shape.
- the patterned sacrificial layer 54 is removed from the semiconductor substrate 50 after the groove 50 V is formed.
- a spacer 60 is formed over the semiconductor substrate 50 and in the groove 50 V.
- the spacer 60 is formed by coating a photosensitive material such as photoresist.
- the photosensitive material may be patterned by exposure and development to form the spacer 60 .
- the spacer 60 has a first edge 601 substantially perpendicular to the first surface 501 of the semiconductor substrate 50 , and a second edge 602 in contact with the second surface 502 of the semiconductor substrate 50 .
- the optical device 70 is disposed in the groove 50 V of the semiconductor substrate 50 to form the optical device package 8 as shown in FIG. 3 .
- the spacer 60 with the vertical first edge 601 the verticality of the sidewalls of the groove 50 V can be maintained. Accordingly, the overall space of the groove 50 V can be reduced, which facilitates miniaturization of the optical device package 8 .
- the optical device 70 can be securely fastened in the groove 50 V.
- FIG. 5 is a schematic diagram illustrating an optical device package 9 in accordance with some other embodiments of the present disclosure.
- the second surface 502 is inclined outwardly with respect to the first surface 501 .
- the first edge 601 of the spacer 60 is substantially perpendicular to the first surface 501 of the semiconductor substrate 50 , while the second edge 602 of the spacer 60 is in contact with the second surface 502 of the semiconductor substrate 50 .
- the groove 50 V may be formed by laser drilling, mechanical drilling or other suitable processes.
- the groove 50 V of the semiconductor substrate 50 can be formed by etching.
- the groove 50 V may have an inverted trapezoidal cross-sectional shape.
- FIG. 6 is a cross-sectional view of an optical device package 100 in accordance with some embodiments of the present disclosure. As shown in FIG. 6 , in comparison to the optical device package 9 of FIG. 5 , the groove 50 V of the optical device package 100 may have a triangular cross-sectional shape.
- FIG. 7A , FIG. 7B and FIG. 7C are schematic diagrams illustrating a method of fabricating an optical device package in accordance with some embodiments of the present disclosure.
- a semiconductor substrate 50 such as a silicon substrate is received.
- a protection layer 52 is formed on a first surface 501 of the semiconductor substrate 50 .
- the protection layer 52 may be configured as a hard mask layer, partially covering the first surface 501 .
- the semiconductor substrate 50 is patterned to form a groove 50 V in the semiconductor substrate 50 .
- the groove 50 V has a triangular cross-sectional shape.
- the groove 50 V may be formed by anisotropic etching.
- an etching solution such as potassium hydroxide (HOH) solution or tetra-methyl ammonium hydroxide (TMAH) solution may be used to etch the semiconductor substrate 50 .
- KOH solution and TMAH solution have different etching rates on different crystalline planes of the semiconductor substrate 50 , and thus can be used to form the groove 50 V of triangular cross-sectional shape.
- a spacer 60 is formed over the semiconductor substrate 50 and in the groove 50 V.
- the spacer 60 has a first edge 601 substantially perpendicular to the first surface 501 of the semiconductor substrate 50 , and a second edge 602 in contact with the second surface 502 of the semiconductor substrate 50 .
- the optical device 70 is disposed in the groove 50 V of the semiconductor substrate 50 to form the optical device package 100 as shown in FIG. 6 .
- the spacer 60 with the vertical first edge 601 the verticality of the sidewalls of the groove 50 V can be maintained. Accordingly, the overall space of the groove 50 V can be reduced, which facilitates miniaturization of the optical device package 8 .
- the optical device 70 can be securely fastened in the groove 50 V.
- FIG. 8 is a cross-sectional view of an optical device package 101 in accordance with some embodiments of the present disclosure.
- the optical device package 101 may further include a buffer layer 62 disposed between the second surface 602 and the optical device 70 .
- the buffer layer 62 may planarize the bottom of the groove 50 V.
- the buffer layer 62 may be disconnected from the spacer 60 .
- the buffer layer 62 may be connected to the spacer 60 .
- the buffer layer 62 and the spacer 60 may include the same material such as photoresist material, but the present disclosure is not limited thereto.
- the buffer layer 62 and the spacer 60 may be formed by the same process such as the same exposure and development process.
- the dimension of the groove 10 V proximal to the first surface 101 and the dimension of the groove 10 V proximal to the second surface 102 are substantially the same. Accordingly, the overall space of the groove 10 V can be reduced, which facilitates miniaturization of the optical device package 1 . In addition, the optical device 20 can be securely fastened in the groove 10 V.
- the optical device package includes a groove with a vertical sidewall to dispose an optical device.
- the vertical sidewall can reduce the overall space of the groove, which facilitates miniaturization of the optical device package.
- the vertical sidewall also allows the optical device to be fastened securely in the groove, enhancing alignment accuracy between the optical device and other optical elements.
- the terms “approximately,” “substantially,” “substantial” and “about” are used to describe and account for small variations. When used in conjunction with an event or circumstance, the terms can refer to instances in which the event or circumstance occurs precisely as well as instances in which the event or circumstance occurs to a close approximation.
- the terms can refer to a range of variation of less than or equal to ⁇ 10% of that numerical value, such as less than or equal to ⁇ 5%, less than or equal to ⁇ 4%, less than or equal to ⁇ 3%, less than or equal to ⁇ 2%, less than or equal to ⁇ 1%, less than or equal to ⁇ 0.5%, less than or equal to ⁇ 0.1%, or less than or equal to ⁇ 0.05%.
- two numerical values can be deemed to be “substantially” the same or equal if the difference between the values is less than or equal to ⁇ 10% of an average of the values, such as less than or equal to ⁇ 5%, less than or equal to ⁇ 4%, less than or equal to ⁇ 3%, less than or equal to ⁇ 2%, less than or equal to ⁇ 1%, less than or equal to ⁇ 0.5%, less than or equal to ⁇ 0.1%, or less than or equal to ⁇ 0.05%.
- substantially parallel can refer to a range of angular variation relative to 0° that is less than or equal to ⁇ 10°, such as less than or equal to ⁇ 5°, less than or equal to ⁇ 4°, less than or equal to ⁇ 3°, less than or equal to ⁇ 2°, less than or equal to ⁇ 1°, less than or equal to ⁇ 0.5°, less than or equal to ⁇ 0.1°, or less than or equal to ⁇ 0.05°.
- substantially perpendicular can refer to a range of angular variation relative to 90° that is less than or equal to ⁇ 10°, such as less than or equal to ⁇ 5°, less than or equal to ⁇ 4°, less than or equal to ⁇ 3°, less than or equal to ⁇ 2°, less than or equal to ⁇ 1°, less than or equal to ⁇ 0.5°, less than or equal to ⁇ 0.1°, or less than or equal to ⁇ 0.05°.
Abstract
An optical device package includes a semiconductor substrate, and an optical device. The semiconductor substrate has a first surface, a second surface different in elevation from the first surface, and a profile connecting the first surface to the second surface. A surface roughness of the profile is greater than a surface roughness of the second surface. The optical device is disposed on the second surface and surrounded by the profile.
Description
- This application is a continuation of U.S. patent application Ser. No. 15/998,408 filed Aug. 15, 2018, the contents of which is incorporated herein by reference in its entirety.
- The present disclosure relates to an optical device package and manufacturing method thereof, and more particularly, to an optical device package including a groove with a vertical sidewall profile for disposing an optical device and manufacturing method thereof.
- An optical communication device uses a substrate with V-shaped groove to dispose optical fiber. The V-shaped groove, however, has a larger aperture dimension in the surface of the substrate and larger depth in the substrate. The V-shaped groove occupies a large amount of the substrate, which impedes the trend toward miniaturization of optical communication devices.
- In some embodiments, an optical device package includes a semiconductor substrate and an optical device. The semiconductor substrate has a first surface, a second surface different in elevation from the first surface, and a profile connecting the first surface to the second surface. A surface roughness of the profile is greater than a surface roughness of the second surface. The optical device is disposed on the second surface and surrounded by the profile.
- In some embodiments, an optical device package includes a semiconductor substrate, a spacer and an optical device. The semiconductor substrate has a first surface, and a second surface connected to the first surface. The second surface is inclined with respect to the first surface. The spacer is disposed adjacent to the second surface. The spacer has a first edge substantially perpendicular to the first surface of the semiconductor substrate. The optical device is surrounded by the first edge of the spacer.
- In some embodiments, a method for manufacturing an optical device package is provided. A semiconductor substrate is received. The semiconductor substrate is patterned to form a trench in the semiconductor substrate. A patterned sacrificial layer is formed over the semiconductor substrate, wherein the patterned sacrificial layer covers a portion of the semiconductor substrate, fills in the trench, and exposes another portion of the semiconductor substrate. The semiconductor substrate exposed from the patterned sacrificial layer is partially removed to form a groove in the semiconductor substrate. The patterned sacrificial layer is removed from the semiconductor substrate.
- Aspects of some embodiments of the present disclosure are best understood from the following detailed description when read with the accompanying figures. Various structures may not be drawn to scale, and the dimensions of the various structures may be arbitrarily increased or reduced for clarity of discussion.
-
FIG. 1 is a cross-sectional view of an optical device package in accordance with some embodiments of the present disclosure. -
FIG. 1A is a top view of an optical device package in accordance with some embodiments of the present disclosure. -
FIG. 1B ,FIG. 1C ,FIG. 1D ,FIG. 1E ,FIG. 1F andFIG. 1G are schematic diagrams illustrating optical device packages in accordance with some other embodiments of the present disclosure. -
FIG. 2A ,FIG. 2B ,FIG. 2C ,FIG. 2D andFIG. 2E are schematic diagrams illustrating a method of fabricating an optical device package in accordance with some embodiments of the present disclosure. -
FIG. 3 is a cross-sectional view of an optical device package in accordance with some embodiments of the present disclosure. -
FIG. 4A ,FIG. 4B ,FIG. 4C andFIG. 4D are schematic diagrams illustrating a method of fabricating an optical device package in accordance with some embodiments of the present disclosure. -
FIG. 5 is a schematic diagram illustrating an optical device package in accordance with some other embodiments of the present disclosure. -
FIG. 6 is a cross-sectional view of anoptical device package 100 in accordance with some embodiments of the present disclosure. -
FIG. 7A ,FIG. 7B andFIG. 7C are schematic diagrams illustrating a method of fabricating an optical device package in accordance with some embodiments of the present disclosure. -
FIG. 8 is a cross-sectional view of an optical device package in accordance with some embodiments of the present disclosure. - The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to explain certain aspects of the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed or disposed in direct contact, and may also include embodiments in which additional features are formed or disposed between the first and second features, such that the first and second features are not in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.
- Spatial descriptions, such as “above,” “below,” “up,” “left,” “right,” “down,” “top,” “bottom,” “vertical,” “horizontal,” “side,” “higher,” “lower,” “upper,” “over,” “under,” and so forth, are indicated with respect to the orientation shown in the figures unless otherwise specified. It should be understood that the spatial descriptions used herein are for purposes of illustration only, and that practical implementations of the structures described herein can be spatially arranged in any orientation or manner, provided that such arrangement does not deviate from the merits of the embodiments of this disclosure.
-
FIG. 1 is a cross-sectional view of anoptical device package 1 in accordance with some embodiments of the present disclosure, andFIG. 1A is a top view of anoptical device package 1 in accordance with some embodiments of the present disclosure. As shown inFIG. 1 andFIG. 1A , theoptical device package 1 includes asemiconductor substrate 10, and anoptical device 20. Thesemiconductor substrate 10 may include a silicon substrate, or a substrate made from another semiconductive material. Thesemiconductor substrate 10 has afirst surface 101, asecond surface 102 different in elevation from thefirst surface 101, and aprofile 103 connecting thefirst surface 101 to thesecond surface 102. In some embodiments, thesecond surface 102 is lower than thefirst surface 101, and thefirst surface 101, thesecond surface 102 and theprofile 103 collectively form agroove 10V for disposing theoptical device 20. In some embodiments, thefirst surface 101 and thesecond surface 102 may be substantially parallel to each other. In some embodiments, aprotection layer 12 can be disposed on thefirst surface 101. Theprotection layer 12 may be configured as a mask layer such as a hard mask layer to protect thesemiconductor substrate 10. The material of theprotection layer 12 may include silicon oxide, silicon nitride, or other suitable inorganic and/or organic materials. - As shown in
FIG. 1 , theprofile 103 of thesemiconductor substrate 10 may include afirst side surface 1031, asecond side surface 1032 and athird surface 1033. Thefirst side surface 1031 is connected to thefirst surface 101. Thesecond side surface 1032 is connected to thesecond surface 102. Thethird surface 1033 is disposed between and connected to thefirst side surface 1031 and thesecond side surface 1032. In some embodiments, thesecond surface 102 is higher than thethird surface 1033. Thethird surface 1033 may be substantially parallel to thesecond surface 102. Thefirst side surface 1031 and thesecond side surface 1032 may be substantially perpendicular to thethird surface 1033. - The
optical device 20 is disposed on thesecond surface 102 and surrounded by theprofile 103. In some embodiments, theoptical device 20 may include a tubular optical device having a curved outer surface, and extending along a direction D as shown inFIG. 1A . For example, theoptical device 20 may include an optical fiber or the like. In some embodiments, theoptical device 20 is in contact with thesecond surface 102 of thesemiconductor substrate 10. In some embodiments, theoptical device 20 may be partially or entirely surrounded by theprofile 103, depending on the height of theoptical device 20. In some embodiments, theoptical device 20 is in contact with theprofile 103 of thesemiconductor substrate 10. For example, theoptical device 20 may be in contact with thefirst side surface 1031 of theprofile 103. In some embodiments, thefirst side surface 1031 may be substantially vertical with respect to thefirst surface 101 of thesemiconductor substrate 10. In some embodiments, the included angle between thefirst side surface 1031 and thefirst surface 101 of thesemiconductor substrate 10 substantially ranges from about 88° to about 92°, for example, about 90°. With the verticalfirst side surface 1031, the dimension of thegroove 10V proximal to thefirst surface 101 and the dimension of thegroove 10V proximal to thesecond surface 102 are substantially the same. Accordingly, the overall space of thegroove 10V can be reduced, which facilitates miniaturization of theoptical device package 1. In addition, theoptical device 20 can be securely fastened in thegroove 10V. -
FIG. 2A ,FIG. 2B ,FIG. 2C ,FIG. 2D andFIG. 2E are schematic diagrams illustrating a method of fabricating an optical device package in accordance with some embodiments of the present disclosure. As shown inFIG. 2A , asemiconductor substrate 10 is received. In some embodiments, aprotection layer 12 is formed on afirst surface 101 of thesemiconductor substrate 10. Theprotection layer 12 may be configured as a hard mask layer, partially covering thefirst surface 101. As shown inFIG. 2B , a patternedsacrificial layer 14 such as a photoresist layer is formed over thesemiconductor substrate 10. The patternedsacrificial layer 14 includesopenings 14H exposing a portion of thefirst surface 101. - As shown in
FIG. 2C , thesemiconductor substrate 10 is patterned to formtrenches 10T in thesemiconductor substrate 10. In some embodiments, thesemiconductor substrate 10 is patterned through theopenings 14H of the patternedsacrificial layer 14 by an anisotropic etching such as dry etching. For example, the dry etching may include plasma etching or the like. The anisotropic etching is selected to form thetrenches 10T such that the verticality of the sidewall oftrench 10T can be maintained, particularly when the depth of thetrench 10T is larger. In some embodiments, the depth of thetrench 10T is greater than 200 micrometers (um) such as 250 um. In some embodiments, the included angle between the sidewall of thetrench 10T and thefirst surface 101 of thesemiconductor substrate 10 substantially ranges from about 88° to about 92°, for example, about 90°. In some embodiments, the bottom and the sidewalls of thetrench 10T have rough surfaces when thetrench 10T is formed by anisotropic etching. In some embodiments, the patternedsacrificial layer 14 is removed from thesemiconductor substrate 10 after thetrench 10T is formed. - As shown in
FIG. 2D , another patternedsacrificial layer 16 such as a photoresist layer is formed over thesemiconductor substrate 10. The patternedsacrificial layer 16 may cover a portion of thesemiconductor substrate 10 and fill in thetrench 10T. The patternedsacrificial layer 16 includesopenings 16H exposing another portion of thesemiconductor substrate 10, for example the portion of thesemiconductor substrate 10 between thetrenches 10T. - As shown in
FIG. 2E , thesemiconductor substrate 10 exposed from the patternedsacrificial layer 16 is partially removed to form agroove 10V in thesemiconductor substrate 10. In some embodiments, thesemiconductor substrate 10 is partially removed through theopenings 16H of the patternedsacrificial layer 16 by an isotropic etching such as wet etching. The isotropic etching is selected to form thegroove 10V, so as to remove defects and residues at the bottom of thegroove 10V. During formation of thegroove 10V, the sidewall of thetrench 10T is covered and protected by the patternedsacrificial layer 16. Accordingly, the verticality of the sidewalls of thetrench 10T can be maintained without being damaged by the etchant of the isotropic etching. Compared to the bottom and sidewall of thetrench 10T formed by anisotropic etching, the surface of the bottom of thegroove 10V formed by isotropic etching is flatter, and thus the uniformity of thegroove 10V can be increased. - As shown in
FIG. 1 andFIG. 1A , the patternedsacrificial layer 16 is removed from thesemiconductor substrate 10. After the patternedsacrificial layer 16 is removed, thesemiconductor substrate 10 has afirst surface 101, asecond surface 102 lower in elevation than thefirst surface 101, and aprofile 103 connecting thefirst surface 101 to thesecond surface 102. Theprofile 103 includes afirst side surface 1031, asecond side surface 1032 and athird surface 1033. Thefirst side surface 1031 is connected to thefirst surface 101. Thesecond side surface 1032 is connected to thesecond surface 102. Thethird surface 1033 is disposed between and connected to thefirst side surface 1031 and thesecond side surface 1032. Thethird surface 1033 is lower than thesecond surface 102. Thethird surface 1033 may be substantially parallel to thesecond surface 102. Thefirst side surface 1031 and thesecond side surface 1032 may be substantially perpendicular to thethird surface 1033. Anoptical device 20 is disposed in thegroove 10V to form theoptical device package 1 as illustrated inFIG. 1 andFIG. 1A . - The
groove 10V may be formed by multi-stage etching to improve the verticality of the sidewall of thegroove 10V (first side surface 1031), and to improve the uniformity of the bottom of thegroove 10V (second surface 102). - Optical device packages provided by the present disclosure are not limited to the above-described embodiments, and may include other, different embodiments, such as those described below. To simplify the description and for convenient comparison between each of the embodiments of the present disclosure, the same or similar components in each of the following embodiments are marked with the same numerals and are not redundantly described.
-
FIG. 1B ,FIG. 1C ,FIG. 1D ,FIG. 1E ,FIG. 1F andFIG. 1G are schematic diagrams illustratingoptical device packages FIG. 1B , in comparison to theoptical device package 1 ofFIG. 1 , thesecond surface 102 and theprofile 103 of thegroove 10V of theoptical device package 2 are rough. In some embodiments, theprofile 103 and thesecond surface 102 are formed by different etching processes as previously described, and thus may have different roughness. In some embodiments, the surface roughness of theprofile 103 is greater than the surface roughness of thesecond surface 102. For example, a ratio of the surface roughness of theprofile 103 to the surface roughness of thesecond surface 102 may substantially range from about 10 to about 40. The surface roughness may be measured in terms of arithmetic mean roughness. For example, the arithmetic mean roughness Ra of theprofile 103 may substantially range from about 100 nanometers (nm) to about 200 nm, and the arithmetic mean roughness Ra of thesecond surface 102 may substantially range from about 5 nm to about 10 nm. - As shown in
FIG. 1C , in comparison to theoptical device package 2 ofFIG. 1B , thesecond surface 102 of thegroove 10V of theoptical device package 3 may be recessed and curved. The recessed and curvedsecond surface 102 may fit in the contour of theoptical device 20, and thus theoptical device 20 can be securely fastened in thegroove 10V. - As shown in
FIG. 1D , in comparison to theoptical device package 2 ofFIG. 1B , thegroove 10V of theoptical device package 4 is deeper, and thesecond surface 102 may be substantially level with thethird surface 1033 of theprofile 103. - As shown in
FIG. 1E , in comparison to theoptical device package 4 ofFIG. 1D , thesecond surface 102 of thegroove 10V of the optical device package 5 may be recessed and curved. The recessed and curvedsecond surface 102 may fit in the contour of theoptical device 20, and thus theoptical device 20 can be securely fastened in thegroove 10V. - As shown in
FIG. 1F , in comparison to theoptical device package 4 ofFIG. 1D , thesecond surface 102 of thegroove 10V of the optical device package 6 is lower than thethird surface 1033 of theprofile 103. - As shown in
FIG. 1G , in comparison to the optical device package 6 ofFIG. 1F , thesecond surface 102 of thegroove 10V of theoptical device package 7 may be recessed and curved. The recessed and curvedsecond surface 102 may fit in the contour of theoptical device 20, and thus theoptical device 20 can be securely fastened in thegroove 10V. -
FIG. 3 is a cross-sectional view of anoptical device package 8 in accordance with some embodiments of the present disclosure. As shown inFIG. 3 , theoptical device package 8 includes asemiconductor substrate 50, aspacer 60 and anoptical device 70. Thesemiconductor substrate 50 may include a silicon substrate, or a substrate made from another semiconductive material. Thesemiconductor substrate 50 has afirst surface 501 and asecond surface 502 connected to thefirst surface 501. Thesecond surface 502 is inclined with respect to thefirst surface 501. In some embodiments, thesecond surface 502 is inclined inwardly with respect to thefirst surface 501. Thesemiconductor substrate 50 may further include athird surface 503 lower than thefirst surface 501 and connected to thesecond surface 502. - In some embodiments, a
protection layer 52 can be disposed on thefirst surface 501. Theprotection layer 52 may be configured to protect thesemiconductor substrate 10. The material of theprotection layer 52 may include silicon oxide, silicon nitride, or other suitable inorganic and/or organic materials. - The
spacer 60 is disposed adjacent to thesecond surface 502. Thespacer 60 has afirst edge 601 substantially perpendicular to thefirst surface 501 of thesemiconductor substrate 50. In some embodiments, thespacer 60 has asecond edge 602 in contact with thesecond surface 502 of thesemiconductor substrate 50. In some embodiments, the material of thespacer 60 may include a photosensitive material, which can be patterned by exposure and development. For example, the material of thespacer 60 may include photoresist material or the like. In some embodiments, thefirst surface 501, thethird surface 503 and thefirst edge 601 of thespacer 601 collectively form agroove 50V for disposing theoptical device 70. - The
optical device 70 is surrounded by thefirst edge 601 of thespacer 60. In some embodiments, theoptical device 70 may include a tubular optical device having a curved outer surface. For example, theoptical device 70 may include an optical fiber or the like. In some embodiments, theoptical device 70 is in contact with thefirst edge 601. In some embodiments, theoptical device 20 may be partially or entirely surrounded by thefirst edge 601, depending on the height of theoptical device 70. Theoptical device 70 may be disposed on and supported by thethird surface 503 of thesemiconductor substrate 50. Thefirst edge 601 of thespacer 60 may be substantially vertical with respect to thefirst surface 501 of thesemiconductor substrate 50. With the verticalfirst edge 601, theoptical device 70 can be securely fastened in thegroove 50V, and miniaturization of theoptical device package 8 can be realized. -
FIG. 4A ,FIG. 4B ,FIG. 4C andFIG. 4D are schematic diagrams illustrating a method of fabricating an optical device package in accordance with some embodiments of the present disclosure. As shown inFIG. 4A , asemiconductor substrate 50 is received. In some embodiments, aprotection layer 52 is formed on afirst surface 501 of thesemiconductor substrate 50. Theprotection layer 52 may be configured as a hard mask layer, partially covering thefirst surface 501. As shown inFIG. 4B , a patternedsacrificial layer 54 such as a photoresist layer is formed over thesemiconductor substrate 50. The patternedsacrificial layer 54 includesopenings 54H exposing a portion of thefirst surface 501. Thesemiconductor substrate 50 is patterned to form agroove 50V in thesemiconductor substrate 50. In some embodiments, thesemiconductor substrate 50 is patterned through theopenings 54H of the patternedsacrificial layer 54 by an isotropic etching such as wet etching. The etching of thesemiconductor substrate 50 is controlled such that thesecond surface 502 is inclined inwardly with respect to thefirst surface 501. In some embodiments, thegroove 50V may have a trapezoidal cross-sectional shape. - As shown in
FIG. 4C , the patternedsacrificial layer 54 is removed from thesemiconductor substrate 50 after thegroove 50V is formed. As shown inFIG. 4D , aspacer 60 is formed over thesemiconductor substrate 50 and in thegroove 50V. In some embodiments, thespacer 60 is formed by coating a photosensitive material such as photoresist. The photosensitive material may be patterned by exposure and development to form thespacer 60. Thespacer 60 has afirst edge 601 substantially perpendicular to thefirst surface 501 of thesemiconductor substrate 50, and asecond edge 602 in contact with thesecond surface 502 of thesemiconductor substrate 50. - The
optical device 70 is disposed in thegroove 50V of thesemiconductor substrate 50 to form theoptical device package 8 as shown inFIG. 3 . By virtue of thespacer 60 with the verticalfirst edge 601, the verticality of the sidewalls of thegroove 50V can be maintained. Accordingly, the overall space of thegroove 50V can be reduced, which facilitates miniaturization of theoptical device package 8. In addition, theoptical device 70 can be securely fastened in thegroove 50V. -
FIG. 5 is a schematic diagram illustrating anoptical device package 9 in accordance with some other embodiments of the present disclosure. In comparison to theoptical device package 8 ofFIG. 4 , thesecond surface 502 is inclined outwardly with respect to thefirst surface 501. Thefirst edge 601 of thespacer 60 is substantially perpendicular to thefirst surface 501 of thesemiconductor substrate 50, while thesecond edge 602 of thespacer 60 is in contact with thesecond surface 502 of thesemiconductor substrate 50. In some other embodiments, thegroove 50V may be formed by laser drilling, mechanical drilling or other suitable processes. In some embodiments, thegroove 50V of thesemiconductor substrate 50 can be formed by etching. In some embodiments, thegroove 50V may have an inverted trapezoidal cross-sectional shape. -
FIG. 6 is a cross-sectional view of anoptical device package 100 in accordance with some embodiments of the present disclosure. As shown inFIG. 6 , in comparison to theoptical device package 9 ofFIG. 5 , thegroove 50V of theoptical device package 100 may have a triangular cross-sectional shape. -
FIG. 7A ,FIG. 7B andFIG. 7C are schematic diagrams illustrating a method of fabricating an optical device package in accordance with some embodiments of the present disclosure. As shown inFIG. 7A , asemiconductor substrate 50 such as a silicon substrate is received. In some embodiments, aprotection layer 52 is formed on afirst surface 501 of thesemiconductor substrate 50. Theprotection layer 52 may be configured as a hard mask layer, partially covering thefirst surface 501. As shown inFIG. 7B , thesemiconductor substrate 50 is patterned to form agroove 50V in thesemiconductor substrate 50. In some embodiments, thegroove 50V has a triangular cross-sectional shape. In some embodiments, thegroove 50V may be formed by anisotropic etching. For example, an etching solution such as potassium hydroxide (HOH) solution or tetra-methyl ammonium hydroxide (TMAH) solution may be used to etch thesemiconductor substrate 50. KOH solution and TMAH solution have different etching rates on different crystalline planes of thesemiconductor substrate 50, and thus can be used to form thegroove 50V of triangular cross-sectional shape. - As shown in FI. 7C, a
spacer 60 is formed over thesemiconductor substrate 50 and in thegroove 50V. Thespacer 60 has afirst edge 601 substantially perpendicular to thefirst surface 501 of thesemiconductor substrate 50, and asecond edge 602 in contact with thesecond surface 502 of thesemiconductor substrate 50. - The
optical device 70 is disposed in thegroove 50V of thesemiconductor substrate 50 to form theoptical device package 100 as shown inFIG. 6 . By virtue of thespacer 60 with the verticalfirst edge 601, the verticality of the sidewalls of thegroove 50V can be maintained. Accordingly, the overall space of thegroove 50V can be reduced, which facilitates miniaturization of theoptical device package 8. In addition, theoptical device 70 can be securely fastened in thegroove 50V. -
FIG. 8 is a cross-sectional view of anoptical device package 101 in accordance with some embodiments of the present disclosure. As shown inFIG. 8 , in comparison to theoptical device package 100 ofFIG. 6 , theoptical device package 101 may further include abuffer layer 62 disposed between thesecond surface 602 and theoptical device 70. Thebuffer layer 62 may planarize the bottom of thegroove 50V. In some embodiments, thebuffer layer 62 may be disconnected from thespacer 60. In some other embodiments, thebuffer layer 62 may be connected to thespacer 60. Thebuffer layer 62 and thespacer 60 may include the same material such as photoresist material, but the present disclosure is not limited thereto. In some embodiments, thebuffer layer 62 and thespacer 60 may be formed by the same process such as the same exposure and development process. - With the vertical
first side surface 1031, the dimension of thegroove 10V proximal to thefirst surface 101 and the dimension of thegroove 10V proximal to thesecond surface 102 are substantially the same. Accordingly, the overall space of thegroove 10V can be reduced, which facilitates miniaturization of theoptical device package 1. In addition, theoptical device 20 can be securely fastened in thegroove 10V. - In some embodiments of the present disclosure, the optical device package includes a groove with a vertical sidewall to dispose an optical device. The vertical sidewall can reduce the overall space of the groove, which facilitates miniaturization of the optical device package. The vertical sidewall also allows the optical device to be fastened securely in the groove, enhancing alignment accuracy between the optical device and other optical elements.
- As used herein, the singular terms “a,” “an,” and “the” may include a plurality of referents unless the context clearly dictates otherwise.
- As used herein, the terms “approximately,” “substantially,” “substantial” and “about” are used to describe and account for small variations. When used in conjunction with an event or circumstance, the terms can refer to instances in which the event or circumstance occurs precisely as well as instances in which the event or circumstance occurs to a close approximation. For example, when used in conjunction with a numerical value, the terms can refer to a range of variation of less than or equal to ±10% of that numerical value, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. For example, two numerical values can be deemed to be “substantially” the same or equal if the difference between the values is less than or equal to ±10% of an average of the values, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. For example, “substantially” parallel can refer to a range of angular variation relative to 0° that is less than or equal to ±10°, such as less than or equal to ±5°, less than or equal to ±4°, less than or equal to ±3°, less than or equal to ±2°, less than or equal to ±1°, less than or equal to ±0.5°, less than or equal to ±0.1°, or less than or equal to ±0.05°. For example, “substantially” perpendicular can refer to a range of angular variation relative to 90° that is less than or equal to ±10°, such as less than or equal to ±5°, less than or equal to ±4°, less than or equal to ±3°, less than or equal to ±2°, less than or equal to ±1°, less than or equal to ±0.5°, less than or equal to ±0.1°, or less than or equal to ±0.05°.
- Additionally, amounts, ratios, and other numerical values are sometimes presented herein in a range format. It is to be understood that such range format is used for convenience and brevity and should be understood flexibly to include numerical values explicitly specified as limits of a range, but also to include all individual numerical values or sub-ranges encompassed within that range as if each numerical value and sub-range were explicitly specified.
- While the present disclosure has been described and illustrated with reference to specific embodiments thereof, these descriptions and illustrations do not limit the present disclosure. It should be understood by those skilled in the art that various changes may be made and equivalents may be substituted without departing from the true spirit and scope of the present disclosure as defined by the appended claims. The illustrations may not be necessarily drawn to scale. There may be distinctions between the artistic renditions in the present disclosure and the actual apparatus due to manufacturing processes and tolerances. There may be other embodiments of the present disclosure which are not specifically illustrated. The specification and drawings are to be regarded as illustrative rather than restrictive. Modifications may be made to adapt a particular situation, material, composition of matter, method, or process to the objective, spirit and scope of the present disclosure. All such modifications are intended to be within the scope of the claims appended hereto. While the methods disclosed herein are described with reference to particular operations performed in a particular order, it will be understood that these operations may be combined, sub-divided, or re-ordered to form an equivalent method without departing from the teachings of the present disclosure. Accordingly, unless specifically indicated herein, the order and grouping of the operations are not limitations of the present disclosure.
Claims (20)
1. An optical device package, comprising:
a semiconductor substrate having a first surface, a second surface different in elevation from the first surface, and a profile connecting the first surface to the second surface, wherein a surface roughness of the profile is greater than a surface roughness of the second surface.
2. The optical device package of claim 1 , wherein the profile includes a scallop shape.
3. The optical device package of claim 1 , wherein the first surface, the second surface and the profile collectively define a recess to receive an optical fiber.
4. The optical device package of claim 3 , further comprising a protection layer disposed on the first surface, wherein the protection layer defines an opening exposing the optical fiber.
5. The optical device package of claim 3 , wherein the second surface includes a curved surface facing the optical fiber, and the optical fiber contacts at least a portion of the curved surface.
6. The optical device package of claim 3 , wherein the profile is not exposed in a view from a direction perpendicular to the first surface.
7. The optical device package of claim 6 , wherein the second surface is exposed in the view from the direction perpendicular to the first surface.
8. An optical device package, comprising:
a carrier defining a recess, wherein a sidewall of the recess includes a plurality of concaves with substantially uniform shapes.
9. The optical device package of claim 8 , wherein in a cross-sectional view, two of the concaves are located on two opposite sides of the recess and are substantially symmetrical.
10. The optical device package of claim 8 , wherein in a cross-sectional view, two of the concaves on one of two opposite sides of the recess are substantially symmetrical along an imaginary axis substantially parallel to a first surface of the carrier.
11. The optical device package of claim 8 , wherein centers of curvature of the concaves are located in the recess.
12. The optical device package of claim 8 , wherein in a cross-sectional view, each of the concaves includes a crest, and the crests of the concaves are substantially arranged on a first imaginary straight line.
13. The optical device package of claim 12 , wherein in a cross-sectional view, each of the concaves includes a trough, and the troughs of the concaves are substantially arranged on a second imaginary straight line.
14. The optical device package of claim 13 , wherein the second imaginary straight line is substantially parallel to the first imaginary straight line.
15. An optical device package, comprising:
a carrier defining a space recessed from an upper surface, wherein the space includes a bottom surface and a sidewall connecting the upper surface and the bottom surface; and
an optical device disposed in the space;
wherein the bottom surface has a curved shape fitting in a portion of a contour of the optical device.
16. The optical device package of claim 15 , wherein the portion of the contour of the optical device is a bottom point of the optical device in a cross-sectional view.
17. The optical device package of claim 15 , wherein the portion of the contour of the optical device contacts the curved shape of the bottom surface in a cross-sectional view.
18. The optical device package of claim 17 , wherein a center of the optical device and a center of curvature of the bottom surface are located on a same side of the bottom surface in the cross-sectional view.
19. The optical device package of claim 15 , wherein at least a portion of the sidewall is substantially spaced apart from the optical device in a cross-sectional view.
20. The optical device package of claim 15 , wherein the sidewall is substantially perpendicular to the upper surface in the cross-sectional view.
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US20220236489A1 (en) * | 2020-08-07 | 2022-07-28 | Advanced Semiconductor Engineering, Inc. | Recessed portion in a substrate and method of forming the same |
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Also Published As
Publication number | Publication date |
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CN117369075A (en) | 2024-01-09 |
US20200057201A1 (en) | 2020-02-20 |
CN110837157A (en) | 2020-02-25 |
CN110837157B (en) | 2023-12-01 |
US11215762B2 (en) | 2022-01-04 |
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