US20210288291A1 - Organic light-emitting diode display - Google Patents
Organic light-emitting diode display Download PDFInfo
- Publication number
- US20210288291A1 US20210288291A1 US17/327,477 US202117327477A US2021288291A1 US 20210288291 A1 US20210288291 A1 US 20210288291A1 US 202117327477 A US202117327477 A US 202117327477A US 2021288291 A1 US2021288291 A1 US 2021288291A1
- Authority
- US
- United States
- Prior art keywords
- layer
- color conversion
- electrode
- oled display
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 claims abstract description 110
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000002096 quantum dot Substances 0.000 claims description 18
- 230000000903 blocking effect Effects 0.000 claims description 16
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 15
- 239000010410 layer Substances 0.000 description 360
- 229910052751 metal Inorganic materials 0.000 description 29
- 239000002184 metal Substances 0.000 description 29
- 150000001875 compounds Chemical class 0.000 description 21
- 239000000203 mixture Substances 0.000 description 14
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 239000002245 particle Substances 0.000 description 11
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 10
- 239000011229 interlayer Substances 0.000 description 10
- 238000002161 passivation Methods 0.000 description 10
- 229920000642 polymer Polymers 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000011368 organic material Substances 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 6
- 239000000872 buffer Substances 0.000 description 6
- 230000000994 depressogenic effect Effects 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- -1 acryl Chemical group 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 4
- 239000011147 inorganic material Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 229910001887 tin oxide Inorganic materials 0.000 description 4
- 239000004793 Polystyrene Substances 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910052788 barium Inorganic materials 0.000 description 3
- 229910052791 calcium Inorganic materials 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 239000010954 inorganic particle Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910052712 strontium Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- RAPHUPWIHDYTKU-WXUKJITCSA-N 9-ethyl-3-[(e)-2-[4-[4-[(e)-2-(9-ethylcarbazol-3-yl)ethenyl]phenyl]phenyl]ethenyl]carbazole Chemical group C1=CC=C2C3=CC(/C=C/C4=CC=C(C=C4)C4=CC=C(C=C4)/C=C/C=4C=C5C6=CC=CC=C6N(C5=CC=4)CC)=CC=C3N(CC)C2=C1 RAPHUPWIHDYTKU-WXUKJITCSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 241000764773 Inna Species 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910003564 SiAlON Inorganic materials 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 2
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 229910001195 gallium oxide Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910021480 group 4 element Inorganic materials 0.000 description 2
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 1
- UHXOHPVVEHBKKT-UHFFFAOYSA-N 1-(2,2-diphenylethenyl)-4-[4-(2,2-diphenylethenyl)phenyl]benzene Chemical compound C=1C=C(C=2C=CC(C=C(C=3C=CC=CC=3)C=3C=CC=CC=3)=CC=2)C=CC=1C=C(C=1C=CC=CC=1)C1=CC=CC=C1 UHXOHPVVEHBKKT-UHFFFAOYSA-N 0.000 description 1
- BFTIPCRZWILUIY-UHFFFAOYSA-N 2,5,8,11-tetratert-butylperylene Chemical group CC(C)(C)C1=CC(C2=CC(C(C)(C)C)=CC=3C2=C2C=C(C=3)C(C)(C)C)=C3C2=CC(C(C)(C)C)=CC3=C1 BFTIPCRZWILUIY-UHFFFAOYSA-N 0.000 description 1
- RXRJIZBJKQRYPA-UHFFFAOYSA-N 2-phenyl-n-(2-phenylethenyl)ethenamine Chemical compound C=1C=CC=CC=1C=CNC=CC1=CC=CC=C1 RXRJIZBJKQRYPA-UHFFFAOYSA-N 0.000 description 1
- OGGKVJMNFFSDEV-UHFFFAOYSA-N 3-methyl-n-[4-[4-(n-(3-methylphenyl)anilino)phenyl]phenyl]-n-phenylaniline Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 OGGKVJMNFFSDEV-UHFFFAOYSA-N 0.000 description 1
- OSQXTXTYKAEHQV-WXUKJITCSA-N 4-methyl-n-[4-[(e)-2-[4-[4-[(e)-2-[4-(4-methyl-n-(4-methylphenyl)anilino)phenyl]ethenyl]phenyl]phenyl]ethenyl]phenyl]-n-(4-methylphenyl)aniline Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(\C=C\C=2C=CC(=CC=2)C=2C=CC(\C=C\C=3C=CC(=CC=3)N(C=3C=CC(C)=CC=3)C=3C=CC(C)=CC=3)=CC=2)=CC=1)C1=CC=C(C)C=C1 OSQXTXTYKAEHQV-WXUKJITCSA-N 0.000 description 1
- DLAICRHEIQVGET-UHFFFAOYSA-N 4-methyl-n-[4-[2-[1-[2-[4-(4-methyl-n-(4-methylphenyl)anilino)phenyl]ethenyl]-4-phenylcyclohexa-2,4-dien-1-yl]ethenyl]phenyl]-n-(4-methylphenyl)aniline Chemical group C1=CC(C)=CC=C1N(C=1C=CC(C=CC2(C=CC(=CC2)C=2C=CC=CC=2)C=CC=2C=CC(=CC=2)N(C=2C=CC(C)=CC=2)C=2C=CC(C)=CC=2)=CC=1)C1=CC=C(C)C=C1 DLAICRHEIQVGET-UHFFFAOYSA-N 0.000 description 1
- SKRQCHDXFSWTHN-UHFFFAOYSA-N 4-methyl-n-[4-[2-[4-[1-(4-methyl-n-(4-methylphenyl)anilino)-2-phenylethenyl]phenyl]ethenyl]phenyl]-n-(4-methylphenyl)aniline Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(C)=CC=1)C(C=1C=CC(C=CC=2C=CC(=CC=2)N(C=2C=CC(C)=CC=2)C=2C=CC(C)=CC=2)=CC=1)=CC1=CC=CC=C1 SKRQCHDXFSWTHN-UHFFFAOYSA-N 0.000 description 1
- DIVZFUBWFAOMCW-UHFFFAOYSA-N 4-n-(3-methylphenyl)-1-n,1-n-bis[4-(n-(3-methylphenyl)anilino)phenyl]-4-n-phenylbenzene-1,4-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 DIVZFUBWFAOMCW-UHFFFAOYSA-N 0.000 description 1
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 description 1
- 239000005725 8-Hydroxyquinoline Substances 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910017115 AlSb Inorganic materials 0.000 description 1
- 229910004647 CaMoO4 Inorganic materials 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910004611 CdZnTe Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004262 HgTe Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- MVMBITSRQNHOLP-UHFFFAOYSA-N OC(=O)C1=NC=CC=C1[Ir]C1=CC(F)=CC(F)=C1C1=CC=CC=N1 Chemical compound OC(=O)C1=NC=CC=C1[Ir]C1=CC(F)=CC(F)=C1C1=CC=CC=N1 MVMBITSRQNHOLP-UHFFFAOYSA-N 0.000 description 1
- 229910002665 PbTe Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910005642 SnTe Inorganic materials 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- GHPGOEFPKIHBNM-UHFFFAOYSA-N antimony(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Sb+3].[Sb+3] GHPGOEFPKIHBNM-UHFFFAOYSA-N 0.000 description 1
- PPYIVKOTTQCYIV-UHFFFAOYSA-L beryllium;selenate Chemical compound [Be+2].[O-][Se]([O-])(=O)=O PPYIVKOTTQCYIV-UHFFFAOYSA-L 0.000 description 1
- UFVXQDWNSAGPHN-UHFFFAOYSA-K bis[(2-methylquinolin-8-yl)oxy]-(4-phenylphenoxy)alumane Chemical compound [Al+3].C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC([O-])=CC=C1C1=CC=CC=C1 UFVXQDWNSAGPHN-UHFFFAOYSA-K 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 229910000421 cerium(III) oxide Inorganic materials 0.000 description 1
- 229910052956 cinnabar Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 229910052909 inorganic silicate Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- YPJRZWDWVBNDIW-MBALSZOMSA-N n,n-diphenyl-4-[(e)-2-[4-[4-[(e)-2-[4-(n-phenylanilino)phenyl]ethenyl]phenyl]phenyl]ethenyl]aniline Chemical group C=1C=C(N(C=2C=CC=CC=2)C=2C=CC=CC=2)C=CC=1/C=C/C(C=C1)=CC=C1C(C=C1)=CC=C1\C=C\C(C=C1)=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 YPJRZWDWVBNDIW-MBALSZOMSA-N 0.000 description 1
- 239000002121 nanofiber Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 150000003413 spiro compounds Chemical class 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 125000005259 triarylamine group Chemical group 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
-
- H01L51/5271—
-
- H01L27/322—
-
- H01L27/3246—
-
- H01L27/3248—
-
- H01L27/3258—
-
- H01L51/5209—
-
- H01L51/5218—
-
- H01L51/524—
-
- H01L51/5268—
-
- H01L51/5278—
-
- H01L51/5284—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/19—Tandem OLEDs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/813—Anodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/841—Self-supporting sealing arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80515—Anodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/877—Arrangements for extracting light from the devices comprising scattering means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/878—Arrangements for extracting light from the devices comprising reflective means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
-
- H01L2251/5315—
-
- H01L2251/5369—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
Definitions
- the described technology generally relates to an organic light-emitting diode (OLED) display.
- OLED organic light-emitting diode
- An OLED display includes organic light-emitting elements that include a hole injection electrode, an organic emission layer, and an electron injection electrode. Each organic light-emitting element emits light using energy generated when excitons, which are created by combining electrons with holes, fall from an excited state to a ground state inside the organic emission layer, and using such light emission, the combination of pixels (including the OLED) can display a predetermined image.
- An OLED display generally has a structure in which an anode and a cathode are disposed to face each other on an insulating layer covering a thin film transistor provided on a substrate and in which an organic emission layer is disposed between the anode and the cathode.
- an organic emission layer is disposed between the anode and the cathode.
- color shift caused by the color shade (hue) varying in dependence on the angle between the viewer and the display may occur.
- One inventive aspect relates to an OLED display that can improve color reproducibility and reduce color shift associated with a viewing angle.
- an OLED display that includes: a first substrate; an insulating layer disposed over the first substrate and having an first inclined portion; a first electrode disposed over the insulating layer; a light-emitting element layer disposed over the first electrode; a second electrode disposed over the light-emitting element layer; and a color conversion layer and a transmissive layer disposed over the second electrode.
- the first electrode includes a second inclined portion disposed over and inclined along the first inclined portion of the insulating layer based on a surface substantially parallel to the first substrate.
- the OLED display may further include a passivation layer disposed between the first substrate and the insulating layer, wherein the second inclined portion of the first electrode disposed in the inclined portion of the insulating layer may be extended such that the first electrode is disposed over the passivation layer.
- the OLED display may further include a pixel defining layer disposed over the insulating layer, wherein the pixel defining layer may overlap a side surface of the inclined portion in the depth dimension of the OLED display.
- the pixel defining layer may include scattering particles having a nano-structure that are dispersed.
- the scattering particles may include at least one selected from the group consisting of inorganic particles and polymer particles.
- the inclined portion may have at least one of the first and second inclined portions has an acute inclination angle with respect to the first substrate.
- the first electrode may include a reflecting electrode.
- the first electrode may include a plurality of protrusions.
- the insulating layer may include a protrusion-depression structure that corresponds to the protrusions of the first electrode.
- the color conversion layer may include at least one of a quantum dot and a phosphor.
- the color conversion layer may include a red color conversion media layer and a green color conversion media layer, and the color conversion layer may further include a light blocking member that is disposed between the red color conversion media layer and the green color conversion media layer, between the red color conversion media layer and the transmissive layer, and between the green color conversion media layer and the transmissive layer.
- the OLED display may further include a blue light-cutting filter that overlaps the red color conversion media layer and the green color conversion media layer in the depth dimension of the OLED display.
- the light-emitting element layer may include a plurality of blue emission layers that respectively correspond to the red color conversion media layer, the green color conversion media layer, and the transmissive layer.
- the red color conversion media layer and the green color conversion media layer may respectively include at least one of the quantum dot and the phosphor, and the transmissive layer may not include the quantum dot and the phosphor.
- At least one of the red color conversion media layer, the green color conversion media layer, and the transmissive layer may include a plurality of scatterers.
- the OLED display may further include a capping layer that is disposed between the second electrode and the color conversion layer and between the second electrode and the transmissive layer.
- the OLED display may further include a second substrate that is disposed over the color conversion layer and the transmissive layer.
- the OLED display may further include a pixel defining layer disposed over the insulating layer, wherein the color conversion layer and the transmissive layer may be disposed between the pixel defining layers.
- the light-emitting element layer may include a blue emission layer that has a tandem structure.
- an OLED display that includes: a first substrate; an insulating layer disposed over the first substrate; an organic light-emitting element disposed over the insulating layer; a color conversion layer and a transmissive layer disposed over the organic light-emitting element; and a reflective metal layer disposed over the color conversion layer and the transmissive layer.
- the reflective metal layer includes an inclined portion.
- the color conversion layer may include a red color conversion media layer and a green color conversion media layer, and the color conversion layer may further include a light blocking member disposed between the red color conversion media layer and the green color conversion media layer, between the red color conversion media layer and the transmissive layer, and between the green color conversion media layer and the transmissive layer.
- the inclined portion of the reflective metal layer may be disposed between the light blocking member and the red color conversion media layer, between the light blocking member and the green color conversion media layer, and between the light blocking member and the transmissive layer.
- the OLED display may further include a blue light-cutting filter that overlaps the red color conversion media layer and the green color conversion media layer in the depth dimension of the OLED display.
- the OLED display may further include a second substrate that is disposed over the light blocking member and the reflective metal layer.
- the organic light-emitting element may include a light-emitting element layer, and the light-emitting element layer may include a plurality of blue emission layers that respectively correspond to the red color conversion media layer, the green color conversion media layer, and the transmissive layer.
- the red color conversion media layer and the green color conversion media layer may respectively include at least one of the quantum dot and the phosphor, and the transmissive layer may not include the quantum dot and the phosphor.
- At least one of the red color conversion media layer, the green color conversion media layer, and the transmissive layer may include a plurality of scatterers.
- the reflective metal layer may include a plurality of protrusions.
- the OLED display may further include an auxiliary layer that is disposed over the reflective metal layer, wherein the auxiliary layer may include a protrusion-depression structure that corresponds to the plurality of protrusions.
- the organic light-emitting element may include: a first electrode disposed over the insulating layer; a light-emitting element layer disposed over the first electrode; and a second electrode disposed over the light-emitting element layer.
- a top surface of the insulating layer may have a structure that is smooth.
- the OLED display with improved color reproducibility and reduced color shift can be implemented.
- FIG. 1 is a cross-sectional view of an OLED display according to an exemplary embodiment.
- FIG. 2 is a cross-sectional view of a green pixel area in the exemplary embodiment of FIG. 1 .
- FIG. 3 is a cross-sectional view of a blue pixel area in the exemplary embodiment of FIG. 1 .
- FIG. 4 is a cross-sectional view of an organic light-emitting element of the OLED display of FIG. 1 .
- FIG. 5 is a cross-sectional view of a tandem structure in which the organic light-emitting element of FIG. 4 is modified.
- FIG. 6 is a schematic cross-sectional view of a path of light generated in an emission layer of the OLED display of FIG. 1 .
- FIG. 7 is a cross-sectional view of an electrode including a protrusion-depression structure in the exemplary embodiment of FIG. 1 .
- FIG. 8 is a cross-sectional view of an OLED display according to an exemplary embodiment.
- FIG. 9 is a cross-sectional view of an OLED display according to an exemplary embodiment.
- FIG. 10 is a cross-sectional view of a reflective metal layer including a protrusion-depression structure in the exemplary embodiment of FIG. 9 .
- the term “substantially” includes the meanings of completely, almost completely or to any significant degree under some applications and in accordance with those skilled in the art. Moreover, “formed, disposed over positioned over” can also mean “formed, disposed or positioned on.” The term “connected” includes an electrical connection.
- the word “on a plane” means viewing a target portion from the top
- the word “on a cross-section” means viewing a cross-section formed by vertically cutting a target portion from the side.
- FIG. 1 is a cross-sectional view of an OLED display 10 according to an exemplary embodiment.
- FIG. 2 is a cross-sectional view of a green pixel area in the exemplary embodiment of FIG. 1 .
- FIG. 3 is a cross-sectional view of a blue pixel area in the exemplary embodiment of FIG. 1 .
- FIG. 4 is a cross-sectional view of an organic light-emitting element of the OLED display of FIG. 1 .
- the OLED display includes 10 a buffer layer 55 disposed over a first substrate 50 .
- the first substrate may be transparent.
- the buffer layer 55 may perform a function of preventing diffusion of metal atoms, impurities, and the like from the first substrate 50 .
- the buffer layer 55 may include a silicon oxide, a silicon nitride, a silicon oxynitride, a silicon oxycarbide, a silicon carbonitride, etc.
- the buffer layer 55 may be omitted.
- the semiconductor layer is disposed over the buffer layer 55 .
- the semiconductor layer may include a plurality of extrinsic regions including an n-type or p-type conductive impurity, and at least one intrinsic region including no conductive impurity.
- the extrinsic regions includes source and drain regions 75 and 80 , which are doped with a p-type impurity and are separated from each other.
- a channel region 85 is provided between the source region 75 and the drain region 80 .
- the extrinsic regions 75 and 80 of the semiconductor layer may be doped with an n-type impurity.
- a gate insulating layer 65 is disposed over the semiconductor layer and the buffer layer 55 .
- the gate insulating layer 65 can be made of a silicon oxide or a silicon nitride.
- a gate electrode 70 is disposed over the gate insulating layer 65 .
- the gate electrode 70 is disposed over a portion of the gate insulating layer 65 below which the semiconductor layer is disposed.
- a gate line connected to the gate electrode 70 is disposed over the gate insulating layer 65 .
- An interlayer insulating layer 90 covering the gate electrode 70 is disposed over the gate insulating layer 65 .
- the interlayer insulating layer 90 may be formed over gate insulating layer 65 to have a uniform thickness according to a profile of the gate electrode 70 . Accordingly, a step portion adjacent to the gate electrode 70 may be formed in the interlayer insulating layer 90 .
- a silicon compound including a silicon oxide, a silicon nitride, a silicon oxynitride, etc. may be used to form the interlayer insulating layer 90 .
- the interlayer insulating layer 90 may perform a function of insulating the gate electrode 70 from source and drain electrodes 95 and 100 to be described below.
- the source electrode 95 and the drain electrode 100 are disposed over the interlayer insulating layer 90 .
- the source and drain electrodes 95 and 100 are separated based on the gate electrode 70 while having a predetermined gap therebetween, and are disposed adjacent to the gate electrode 70 .
- the source and drain electrodes 95 and 100 may be respectively extended from the interlayer insulating layer 90 disposed over the source and drain regions 75 and 80 to the interlayer insulating layer 90 disposed over the gate electrode 70 .
- the source and drain electrodes 95 and 100 penetrate the interlayer insulating layer 90 such that they are respectively connected to the source and drain regions 75 and 80 .
- the source and drain electrodes 95 and 100 may respectively include a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, etc.
- a data line crossing the gate line is disposed over the interlayer insulating layer 90 such that it is connected to the source electrode 95 .
- a passivation layer 105 is disposed over the source electrode 95 and the drain electrode 100 .
- the passivation layer 105 may have a sufficient thickness to completely cover the source electrode 95 and the drain electrode 100 .
- the passivation layer 105 may include an organic material, an inorganic material, etc.
- the OLED display 10 includes an insulating layer 110 having an first inclined portion 120 and disposed over the passivation layer 105 .
- a contact hole which also penetrates the passivation layer 105 to partially expose the drain electrode 100 , is formed in the insulating layer 110 .
- the drain electrode 100 may be electrically connected to a first electrode 125 to be described below via the contact hole.
- the insulating layer 110 has a partially depressed portion.
- the partially depressed portion may, as shown in FIG. 2 , expose some of a top surface of the passivation layer 105 .
- a side surface connecting the partially depressed portion of the insulating layer 110 to the other portion of the insulating layer 110 that is not depressed may form the first inclined portion 120 .
- the first inclined portion 120 has a first inclination angle ⁇ 1 , and the first inclination angle ⁇ 1 may be an acute angle, i.e., greater than 0 degrees and smaller than 90 degrees.
- the first inclination angles ⁇ 1 of the three respective emission areas DA illustrated in FIG. 1 are illustrated to be the same as each other, but in order to improve color shift associated with a viewing angle, the inclination angles of the respective emission areas may be designed to be different from each other.
- the first electrode 125 is disposed over the insulating layer 110 .
- the first electrode 125 is filled into the contact hole described above such that it is connected to the drain electrode 100 .
- the first electrode 125 covers the partially depressed portion of the insulating layer 110 , and includes an second inclined portion 126 that is disposed along the first inclined portion 120 .
- the second inclined portion 126 of the first electrode 125 may be inclined based on a surface that is substantially parallel to the first substrate 50 . In this case, the second inclined portion 126 of the first electrode 125 may cover most of the first inclined portion 120 of the insulating layer 110 .
- the first electrode 125 may contact the top surface of the passivation layer 105 in the partially depressed portion of the insulating layer 110 .
- the OLED display including the insulating layer 110 having the first inclined portion 120 as in the current exemplary embodiment may be a top emission type in which light is finally emitted in a direction toward the insulating layer 110 from the first substrate 50 .
- the first electrode 125 may include a reflective material.
- the first electrode 125 may include a metal such as aluminum, silver, platinum, gold (Au), chromium (Cr), tungsten (W), molybdenum (Mo), titanium (Ti), palladium (Pd), and iridium (Ir), an alloy thereof, etc. They may be used alone or in combination.
- the first electrode 125 may have a single-layered structure or a multi-layered structure including the metal and/or the alloy described above.
- the first electrode 125 may have a structure such as a triple layer structure of silver (Ag)/indium tin oxide (ITO)/silver (Ag).
- a pixel defining layer 130 is disposed over the insulating layer 110 and the first electrode 125 .
- the pixel defining layer 130 may overlap a side surface of the first inclined portion 120 in the depth dimension of the OLED display.
- the pixel defining layer 130 may be formed of an organic material, an inorganic material, etc.
- the pixel defining layer 130 may include an organic material such as a photoresist, a polyacrylate resin, a polyimide resin, an acryl-based resin, etc., or an inorganic material such as a silicon compound.
- the pixel defining layer 130 may also be formed of a photoresist including a black pigment, in which case the pixel defining layer 130 may serve as a light blocking member.
- Scattering particles having a nano-structure may be dispersed in the pixel defining layer 130 .
- the scattering particles may include at least one selected from the group consisting of inorganic particles and polymer particles.
- the scattering particles may include inorganic particles such as silica, TiO 2 , ZrO 2 , etc., or polymer particles such as polystyrene, polymethyl methacrylate (PMMA), etc.
- An opening 132 exposing some of the first electrode 125 is formed in the pixel defining layer 130 .
- a side surface of the pixel defining layer 130 formed by the opening 132 may have an inclined structure, and an inclination angle of the inclined structure may be substantially the same or similar to the first inclination angle ⁇ 1 of the insulating layer 110 .
- a range being substantially the same or similar may correspond to a difference being greater than 0 degrees and smaller than about 5 degrees.
- the inclination angle of the pixel defining layer 130 having the inclined structure may be different from the first inclination angle ⁇ 1 regardless of the first inclination angle ⁇ 1 of the insulating layer 110 .
- the pixel defining layer 130 may define an emission area DA and a non-emission area PA in the OLED display.
- An area where the opening 132 of the pixel defining layer 130 is disposed corresponds to the emission area DA, while an area where the pixel defining layer 130 except for the opening 132 is disposed corresponds to the non-emission area PA.
- the emission area DA may correspond to a portion of an organic element layer 135 to be described below from which light is emitted, while the non-emission area PA may correspond to the rest of the area other than the emission area DA.
- the first inclined portion 120 of the insulating layer 110 is disposed in the emission area DA, and the first electrode 125 is disposed in the emission area DA to cover a side surface of the first inclined portion 120 .
- the pixel defining layer 130 covers a portion of the first electrode 125 in the emission area DA that covers the side surface of the first inclined portion 120 .
- a light-emitting element layer 135 is disposed over the first electrode 125 that is disposed in the emission area DA, and a second electrode 145 is disposed over the light-emitting element layer 135 .
- the first electrode 125 , the light-emitting element layer 135 , and the second electrode 145 may configure the organic light-emitting element.
- the light-emitting element layer 135 extends along the side surface of the inclined structure of the pixel defining layer 130 such that it is disposed over some of a top surface of the pixel defining layer 130 .
- the light-emitting element layer 135 is disposed only in a portion of the first electrode 125 substantially exposed by the opening 132 , or is disposed only in a portion of the first electrode 125 exposed by the opening 132 and extends therefrom to be disposed only at an inclined side surface of the pixel defining layer 130 .
- the light-emitting element layer 135 included a multi-layered structure including a hole injection layer, a hole transporting layer, an organic emission layer, an electron transporting layer, an electron injection layer, etc.
- the organic emission layer may be formed in each pixel by laminating a material for generating blue light or by laminating a plurality of light-emitting materials for generating white light.
- the organic light-emitting element includes a hole transporting region 1351 disposed over the first electrode 125 , an organic emission layer 1354 disposed over the hole transporting region 1351 , an electron transporting region 1355 disposed over the organic emission layer 1354 , and the second electrode 145 disposed over the electron transporting region 1355 .
- the hole transporting region 1351 may include an auxiliary layer that is disposed between the first electrode 125 and the emission layer 1354 .
- the hole transporting region 1351 may include at least one of the hole transporting layer and the hole injection layer.
- the hole transporting layer may perform a function of efficiently transporting holes transferred from the first electrode 125 .
- the hole transporting layer may include an organic material.
- the hole transporting layer may include N,N-dinaphthyl-N,N′-diphenyl benzidine (NPD), TPD (N,N′-bis-(3-methylphenyl)-N,N′-bis-(phenyl)-benzidine), s-TAD, 4,4′,4′′-tris-(N-3-methylphenyl-N-phenyl-amino)-triphenylamine (MTDATA), and the like, but it is not limited thereto.
- NPD N,N-dinaphthyl-N,N′-diphenyl benzidine
- TPD N,N′-bis-(3-methylphenyl)-N,N′-bis-(phenyl)-benzidine
- s-TAD 4,4′,4′′-tris-(N-3-methylphenyl-N-phenyl-amino)-triphenylamine (MTDATA), and the like, but it is not limited thereto.
- MTDATA 4,
- the organic emission layer 1354 may include a material that emits blue light.
- a material for forming the organic emission layer 1354 is not specifically limited.
- the organic emission layer 1354 may be made of oxadiazole dimer dyes (bis-DAPOXP), spiro compounds (spiro-DPVBi, spiro-6P), triarylamine compounds, bis(styryl)amine (DPVBi, DSA), 4,4′-bis(9-ethyl-3-carbazovinylene)-1,1′-biphenyl (BCzVBi), perylene, 2,5,8,11-tetra-tert-butylperylene (TPBe), 9H-carbazol-3,3′-(1,4-phenylene-di-2,1-ethene-diyl)bis[9-ethyl-9C] (BCzVB), 4,4-bis[4-(di-p-tolylamino)styryl]biphenyl (DPAV
- the organic emission layer 1354 may further include a dopant that is added to a host.
- FIG. 5 is a cross-sectional view of a tandem structure in which the organic light-emitting element of FIG. 4 is modified.
- the organic light-emitting element has a tandem type of structure.
- the organic emission layer 1354 may include two layers 1352 and 1353 that respectively emit the same color or different colors.
- the two layers 1352 and 1353 respectively emitting the same color may be blue emission layers.
- the two layers 1352 and 1353 emitting different colors may be mixed to emit a color that represents white.
- one of the two layers 1352 and 1353 may be a blue emission layer, while the other may be a yellow emission layer.
- the organic emission layer 1354 may include three layers that respectively emit different colors, and in this case, the three layers may respectively emit red, green, and blue or blue, yellow, and blue.
- a charge generation layer may be disposed between the two layers 1352 and 1353 .
- the charge generation layer is generally formed between the neighboring emission layers, serving to control charge balance between the adjacent emission layers.
- the electron transporting region 1355 may be disposed over the organic emission layer 1354 .
- the electron transporting region 1355 may include the auxiliary layer that is disposed between the organic emission layer 1354 and the second electrode 145 .
- the electron transporting region 1355 may include at least one of the electron transporting layer and the electron injection layer. In this case, the electron transporting layer may include an organic material.
- the electron transporting layer may be made of at least one selected from a group of tris(8-hydroxyquinolino)aluminum (Alq3), 2-[4-biphenyl-5-[4-tert-butylphenyl]]-1,3,4-oxadiazole (PBD), 1,2,4-triazole (TAZ), spiro-2-[4-biphenyl-5-[4-tert-butylphenyl]]-1,3,4-oxadiazole (spiro-PBD), and 8-hydroxyquinoline beryllium salt (BAlq), but it is not limited thereto.
- Alq3 tris(8-hydroxyquinolino)aluminum
- PBD 2-[4-biphenyl-5-[4-tert-butylphenyl]]-1,3,4-oxadiazole
- TEZ 1,2,4-triazole
- the second electrode 145 is disposed over the light-emitting element layer 135 and the pixel defining layer 130 .
- the second electrode 145 may include a transparent conductive material.
- the second electrode 145 may include an indium tin oxide, an indium zinc oxide, a zinc tin oxide, a zinc oxide, a tin oxide, a gallium oxide, etc., or may include Liq/Al. They may be used alone or in combination.
- the second electrode 145 may be extended from the emission area DA to the non-emission area PA.
- the second electrode 145 is not limited thereto, and it may be disposed in the emission area DA or only at a top surface of the light-emitting element layer 135 .
- a capping layer 150 is disposed over the second electrode 145 .
- the capping layer 150 may be extended from the emission area DA to the non-emission area PA.
- the capping layer 150 may be formed of an organic material, an inorganic material, etc.
- the capping layer 150 may include a photoresist, an acryl-based polymer, a polyimide-based polymer, a polyamide-based polymer, a siloxane-based polymer, a photosensitive acryl carboxylic group-containing polymer, a novolac resin, an alkali soluble resin, a silicon oxide, a silicon nitride, a silicon oxynitride, a silicon oxycarbide, a silicon carbonitride, aluminum, magnesium, zinc, hafnium, zirconium, titanium, tantalum, an aluminum oxide, a titanium oxide, a tantalum oxide, a magnesium oxide, a zinc oxide, a hafnium oxide, a zirconium oxide,
- Color conversion layers 340 R and 340 G and a transmissive layer 340 B are disposed over the capping layer 150 .
- the color conversion layers 340 R and 340 G include a red color conversion media layer 340 R and a green color conversion media layer 340 G.
- a light blocking member 372 is disposed between the neighboring red and green color conversion media layers 340 R and 340 G, between the red color conversion media layer 340 R and the transmissive layer 340 B, and between the green color conversion media layer 340 G and the transmissive layer 340 B.
- the light blocking member 372 may more effectively prevent color mixture that is generated between the adjacent color conversion media layers 340 R and 340 G and between the adjacent color conversion media layers 340 R and 340 G and the transmissive layer 340 B.
- a green pixel area including the green color conversion media layer 340 G and a red pixel area having a configuration substantially similar to that of the green pixel area will now be described with reference to FIG. 2 .
- a band pass filter 350 is disposed between the capping layer 150 and the green color conversion media layer 340 G.
- the band pass filter 350 is also disposed between the neighboring color conversion media layers 340 R and 340 G and between the neighboring color conversion media layers 340 R and 340 G and the transmissive layer 340 B, and in this case, may be disposed between a second substrate 310 and a light blocking member 372 to be described below in a direction substantially perpendicular to the first substrate 50 .
- the band pass filter 350 may more efficiently provide light that is received from the organic emission layer 1354 , and may be omitted.
- auxiliary metal layer 362 is disposed between the green color conversion media layer 340 G and the light blocking member 372 .
- the auxiliary metal layer 362 may be a metal material that can reflect light, and may increase an amount of light emitted to a user by reflecting light incident on the auxiliary metal layer 362 back to the color conversion media layers 340 R and 340 G, the transmissive layer 340 B, or the second substrate 310 .
- a blue light-cutting filter 322 is disposed over the green color conversion media layer 340 G.
- the blue light-cutting filter 322 is also disposed over the red color conversion media layer 340 R.
- the blue light-cutting filter 322 performs a function to be described below.
- color mixture is prevented from being generated during a process of implementing green when blue light passes through the green color conversion media layer 340 G and the red color conversion media layer 340 R.
- the blue light-cutting filter 322 may be made of a mixture of any one of BiO 2 , ZnO, and Ce 2 O 3 and any one of CaCO 3 , ZrO 2 , TiO 2 , and Ar 2 O 3 .
- a material for forming the blue light-cutting filter 322 is not limited to the examples described above, and any materials that can block blue light may be applied.
- the green color conversion media layer 340 G may convert blue light provided from the organic emission layer 1354 to green light.
- the green color conversion media layer 340 G may include a green phosphor, and the green phosphor may be at least one of yttrium aluminum garnet (YAG), (Ca, Sr, Ba) 2 SiO 4 , SrGa 2 S 4 , BAM, ⁇ -SiAlON, ⁇ -SiAlON, Ca 3 Sc 2 Si 3 O 12 , Tb 3 Al 5 O 12 , BaSiO 4 , CaAlSiON, and (Sr 1-x Ba x )Si 2 O 2 N 2 .
- the x may be a random number between 0 and 1.
- the red color conversion media layer 340 R may convert blue light provided from the organic emission layer 1354 to red light.
- the red color conversion media layer 340 R may include a red phosphor, and the red phosphor may be at least one of (Ca, Sr, Ba)S, (Ca, Sr, Ba) 2 Si 5 N 8 , CaAlSiN 3 , CaMoO 4 , and Eu 2 Si 5 N 8 .
- the red color conversion media layer 340 R and the green color conversion media layer 340 G may include a color-converting quantum dot.
- the quantum dot may be selected from a group II-VI compound, a group III-V compound, a group IV-VI compound, a group IV element, a group IV compound, and a combination thereof.
- the group II-VI compound may be selected from: a two-element compound selected from a group of CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and a mixture thereof; a three-element compound selected from a group of CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, and a mixture thereof; and a four-element compound selected from a group of HgZnTeS, CdZnS
- the group III-V compound may be selected from: a two-element compound selected from a group of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and a mixture thereof; a three-element compound selected from a group of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InNAs, InPSb, GaAlNP, and a mixture thereof; and a four-element compound selected from a group of GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInNAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, and a mixture thereof.
- the group IV-VI compound may be selected from: a two-element compound selected from a group of SnS, SnSe, SnTe, PbS, PbSe, PbTe, and a mixture thereof; a three-element compound selected from a group of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, and a mixture thereof; and a four-element compound selected from a group of SnPbSSe, SnPbSeTe, SnPbSTe, and a mixture thereof.
- the group IV element may be selected from a group of Si, Ge, and a mixture thereof.
- the group IV compound may be a two-element compound selected from a group of SiC, SiGe, and a mixture thereof.
- the two-element compound, the three-element compound, or the four-element compound may exist in particles at a uniform concentration, or in the same particle while being divided to have partially different concentration distributions.
- it may have a core/shell structure where one quantum dot encloses another quantum dot.
- An interface between the core and the shell may have a concentration gradient, such that a concentration of an element existing in the shell gradually decreases closer to a center of the interface.
- the quantum dot may have a full width at half maximum (FWHM) of the light-emitting wavelength spectrum that is less than about 45 nm, for example, less than about 40 nm, or less than about 30 nm. In this range, color purity or color reproducibility may be improved. In addition, since light emitted via the quantum dot is emitted in all directions, a viewing angle of light may be improved. However, depending on the embodiment, the FWHM can be less than about 45 nm.
- the quantum dot is not specifically limited to have shapes that are generally used in the technical field related to the present disclosure, and more specifically, may have a shape such as a nano-particle having a spherical shape, a pyramid shape, a multi-arm shape, or a cubic shape, or may be a nanotube, a nanowire, a nanofiber, a planar nano-particle, etc.
- a blue pixel area including the transmissive layer 340 B will now be described with reference to FIG. 3 .
- the transmissive layer 340 B may be made of a transparent polymer, and may transmit blue light provided from the organic emission layer 1354 to exhibit blue.
- the transmissive layer 340 B corresponding to a region for emitting blue includes a material that emits received blue even without a separate phosphor or a quantum dot.
- the transmissive layer 340 B includes a polymer such as a photosensitive resin or TiO 2 .
- the transmissive layer 340 B further includes scatterers 335 .
- the scatterers 335 may make luminance of light emitted from the transmissive layer 340 B uniform at the front and at the side.
- the scatterers 335 may be made of any materials that can uniformly scatter light, and as an example, may be any one of silica, TiO 2 , ZrO 2 , Al 2 O 3 , In 2 O 3 , ZnO, SnO 2 , Sb 2 O 3 , and ITO.
- a size of the scatterer 335 may have a range of Equation 1.
- Equation 1 ⁇ is a light-emitting wavelength (nanometer) of the phosphor or the quantum dot, and PS QD represents an aggregated particle size (nanometer) of the phosphor or the quantum dot.
- the scatterers 335 are described to be included in the transmissive layer 340 B, but as a modified example, the scatterers may also be included in the red color conversion media layer 340 R and the green color conversion media layer 340 G.
- the second substrate 310 is disposed over the red color conversion media layer 340 R, the green color conversion media layer 340 G, and the transmissive layer 340 B.
- a ⁇ /4 polarizer which prevents reflection of external light, may be further included on the second substrate 310 .
- FIG. 6 is a schematic cross-sectional view of a path of light generated in an emission layer of the OLED display of FIG. 1 .
- the inclined structure included in the first electrode 125 prevents light from being totally reflected, and the light may be reflected by the first electrode 125 such that it is transmitted to the color conversion layer including the color conversion media layers 340 R and 340 G and the transmissive layer 340 B.
- the OLED display according to the current exemplary embodiment, light generated from the light-emitting element layer 135 can be totally reflected between the first electrode 125 and the second electrode 145 to prevent light loss, and light-emitting efficiency can be maximized by the color conversion layer and the transmissive layer that are disposed over the organic light-emitting element. Since the color conversion layer according to the current exemplary embodiment is formed to include at least one of the phosphor and the quantum dot, color shift which is inherent in conventional OLED displays can be minimized.
- FIG. 7 is a cross-sectional view of an electrode including a protrusion-depression structure in the exemplary embodiment of FIG. 1 .
- a protrusion-depression structure 115 is formed at a surface of the insulating layer 110 that has an first inclined portion 120 . Due to the protrusion-depression structure 115 , a surface of the first electrode 125 may have a protrusion 116 .
- the protrusion 116 may have various planar shapes such as circular, oval, rhombus, and triangular shapes, as well as a quadrangular shape. Since the first electrode 125 has the protrusion 116 , light generated from the light-emitting element layer 135 can be reflected to further improve luminous efficiency of the OLED display.
- FIG. 8 is a cross-sectional view of an OLED display 20 according to another exemplary embodiment.
- the elements disposed between the first substrate 50 and the second electrode 145 are substantially the same as those of the OLED display 10 of FIG. 1 .
- elements including a color conversion layer and a transmissive layer are different, only differences will now be described.
- the color conversion layer including a red color conversion media layer 540 R and a green color conversion media layer 540 , and a transmissive layer 540 B are disposed over the second electrode 145 . Most of the color conversion layer and the transmissive layer 540 B are disposed in an opening 132 between pixel defining layers 130 .
- a blue light-cutting filter 522 is disposed over the red color conversion media layer 540 R and the green color conversion media layer 540 G.
- a capping layer 550 is disposed over the blue light-cutting filter 522 and the transmissive layer 540 B.
- FIGS. 1 to 7 may be applied unless they contradict the exemplary embodiment of FIG. 8 .
- FIG. 9 is a cross-sectional view of an OLED display 30 according to an exemplary embodiment.
- the elements disposed between the first substrate 50 and the passivation layer 105 in a direction substantially perpendicular to the first substrate 50 are substantially the same as those of the OLED display 10 of FIG. 1 .
- elements disposed over the insulating layer 110 are different, only differences will now be described.
- a top surface of the insulating layer 110 may not have an inclined portion but may have a structure that is smooth in most of the region.
- An organic light-emitting element which includes first and second electrodes 125 and 145 and a light-emitting element layer 135 , is disposed over an insulating layer 110 .
- the first electrode 125 is disposed over the insulating layer 110 , and the first electrode 125 may have a structure that is smooth based on a surface substantially parallel to the first substrate 50 .
- the first electrode 125 may include a transparent conductive material for bottom emission to be described below.
- the first electrode 125 may include an indium tin oxide, an indium zinc oxide, a zinc tin oxide, a zinc oxide, a tin oxide, a gallium oxide, etc. They may be used alone or in combination.
- a pixel defining layer 130 is disposed over the insulating layer 110 and the first electrode 125 , and an opening 132 exposing some of the first electrode 125 is formed in the pixel defining layer 130 .
- a side surface of the pixel defining layer 130 formed the by opening 132 may have an inclined structure, and a light-emitting element layer 135 is disposed in the opening 132 .
- the second electrode 145 is disposed over the light-emitting element layer 135 , and the second electrode 145 may include a transparent conductive material.
- a capping layer 150 is disposed over the second electrode 145 .
- a color conversion layer including a red color conversion media layer 740 R and a green color conversion media layer 740 G, and a transmissive layer 740 B are disposed over the capping layer 150 .
- a light blocking member 772 is disposed between the adjacent red and green color conversion media layers 740 R and 740 G, between the red color conversion media layer 740 R and the transmissive layer 740 B, and between the green color conversion media layer 740 G and the transmissive layer 740 B.
- a blue light-cutting filter 722 may be disposed between the red color conversion media layer 740 R and the capping layer 150 and between the green color conversion media layer 740 G and the capping layer 150 .
- the OLED display 30 includes a reflective metal layer 780 on top of the red and green color conversion media layers 740 R and 740 G and the transmissive layer 740 B.
- the reflective metal layer 780 includes a material that has a reflective property.
- the reflective metal layer 780 may include a metal such as aluminum (Al), silver (Ag), platinum (Pt), gold (Au), chromium (Cr), tungsten (W), molybdenum (Mo), titanium (Ti), palladium (Pd), or iridium (Ir), and an alloy thereof. They may be used alone or in combination.
- the reflective metal layer 780 may be formed to have a single-layered structure or a multi-layered structure including the metal and/or the alloy thereof described above.
- the reflective metal layer 780 may have a triple layer structure of silver (Ag)/indium tin oxide (ITO)/silver (Ag).
- the reflective metal layer 780 has an inclined portion 720 .
- the inclined portion 720 may be disposed between the light blocking member 772 and the red color conversion media layer 740 R, between the light blocking member 772 and the green color conversion media layer 740 G, and between the light blocking member 772 and the transmissive layer 740 B.
- the inclined portion 720 has an inclination angle ⁇ , and the inclination angle ⁇ may be greater than 0 degrees and smaller than 90 degrees.
- the reflective metal layer 780 having the inclined portion 720 reflects light emitted from the red and green color conversion media layers 740 R and 740 G and the transmissive layer 740 B, thereby further improving efficiency of light finally emitted in a direction toward the first substrate 50 from a second substrate 710 to be described below.
- the second substrate 710 is disposed over the reflective metal layer 780 .
- FIGS. 1 to 7 may be applied unless they contradict the exemplary embodiment of FIG. 9 .
- FIG. 10 is a cross-sectional view of a reflective metal layer including a protrusion-depression structure in the exemplary embodiment of FIG. 9 .
- a plurality of protrusions 716 are formed at a surface of a reflective metal layer 780 having an inclined portion 720 .
- an auxiliary layer 790 having a protrusion-depression structure 715 may be further included between a second substrate 710 and the reflective metal layer 780 .
- the auxiliary layer 790 may be an organic material.
- the reflective metal layer 780 has the protrusions 716 , light emitted from the red color conversion media layer 740 R, the green color conversion media layer 740 G, and the transmissive layer 740 B can be reflected, thereby further improving luminous efficiency of the OLED display.
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Nanotechnology (AREA)
Abstract
An organic light-emitting diode (OLED) display is disclosed. In one aspect, the OLED display includes a first substrate, an insulating layer disposed over the first substrate and including a first inclined portion and a first electrode disposed over the insulating layer. The OLED display also includes a light-emitting element layer disposed over the first electrode, a second electrode disposed over the light-emitting element layer and a color conversion layer and a transmissive layer disposed over the second electrode. The first electrode includes a second inclined portion disposed over and inclined along the first inclined portion of the insulating layer.
Description
- This application claims priority to and the benefit of Korean Patent Application No. 10-2015-0152548 filed in the Korean Intellectual Property Office on Oct. 30, 2015, the entire contents of which are incorporated herein by reference.
- The described technology generally relates to an organic light-emitting diode (OLED) display.
- An OLED display includes organic light-emitting elements that include a hole injection electrode, an organic emission layer, and an electron injection electrode. Each organic light-emitting element emits light using energy generated when excitons, which are created by combining electrons with holes, fall from an excited state to a ground state inside the organic emission layer, and using such light emission, the combination of pixels (including the OLED) can display a predetermined image.
- An OLED display generally has a structure in which an anode and a cathode are disposed to face each other on an insulating layer covering a thin film transistor provided on a substrate and in which an organic emission layer is disposed between the anode and the cathode. However, since light generated from the organic emission layer is partially or totally reflected between the organic emission layer and one of the electrodes, efficiency of light transmitted to the environment is reduced.
- In addition, color shift caused by the color shade (hue) varying in dependence on the angle between the viewer and the display may occur.
- The above information disclosed in this Background section is only to enhance the understanding of the background of the disclosure and therefore it may contain information that does not form the prior art that is already known in this country to a person of ordinary skill in the art.
- One inventive aspect relates to an OLED display that can improve color reproducibility and reduce color shift associated with a viewing angle.
- Another aspect is an OLED display that includes: a first substrate; an insulating layer disposed over the first substrate and having an first inclined portion; a first electrode disposed over the insulating layer; a light-emitting element layer disposed over the first electrode; a second electrode disposed over the light-emitting element layer; and a color conversion layer and a transmissive layer disposed over the second electrode. The first electrode includes a second inclined portion disposed over and inclined along the first inclined portion of the insulating layer based on a surface substantially parallel to the first substrate.
- The OLED display may further include a passivation layer disposed between the first substrate and the insulating layer, wherein the second inclined portion of the first electrode disposed in the inclined portion of the insulating layer may be extended such that the first electrode is disposed over the passivation layer.
- The OLED display may further include a pixel defining layer disposed over the insulating layer, wherein the pixel defining layer may overlap a side surface of the inclined portion in the depth dimension of the OLED display.
- The pixel defining layer may include scattering particles having a nano-structure that are dispersed.
- The scattering particles may include at least one selected from the group consisting of inorganic particles and polymer particles.
- The inclined portion may have at least one of the first and second inclined portions has an acute inclination angle with respect to the first substrate.
- The first electrode may include a reflecting electrode.
- The first electrode may include a plurality of protrusions.
- The insulating layer may include a protrusion-depression structure that corresponds to the protrusions of the first electrode.
- The color conversion layer may include at least one of a quantum dot and a phosphor.
- The color conversion layer may include a red color conversion media layer and a green color conversion media layer, and the color conversion layer may further include a light blocking member that is disposed between the red color conversion media layer and the green color conversion media layer, between the red color conversion media layer and the transmissive layer, and between the green color conversion media layer and the transmissive layer.
- The OLED display may further include a blue light-cutting filter that overlaps the red color conversion media layer and the green color conversion media layer in the depth dimension of the OLED display.
- The light-emitting element layer may include a plurality of blue emission layers that respectively correspond to the red color conversion media layer, the green color conversion media layer, and the transmissive layer.
- The red color conversion media layer and the green color conversion media layer may respectively include at least one of the quantum dot and the phosphor, and the transmissive layer may not include the quantum dot and the phosphor.
- At least one of the red color conversion media layer, the green color conversion media layer, and the transmissive layer may include a plurality of scatterers.
- The OLED display may further include a capping layer that is disposed between the second electrode and the color conversion layer and between the second electrode and the transmissive layer.
- The OLED display may further include a second substrate that is disposed over the color conversion layer and the transmissive layer.
- The OLED display may further include a pixel defining layer disposed over the insulating layer, wherein the color conversion layer and the transmissive layer may be disposed between the pixel defining layers.
- The light-emitting element layer may include a blue emission layer that has a tandem structure.
- Another aspect is an OLED display that includes: a first substrate; an insulating layer disposed over the first substrate; an organic light-emitting element disposed over the insulating layer; a color conversion layer and a transmissive layer disposed over the organic light-emitting element; and a reflective metal layer disposed over the color conversion layer and the transmissive layer. The reflective metal layer includes an inclined portion.
- The color conversion layer may include a red color conversion media layer and a green color conversion media layer, and the color conversion layer may further include a light blocking member disposed between the red color conversion media layer and the green color conversion media layer, between the red color conversion media layer and the transmissive layer, and between the green color conversion media layer and the transmissive layer.
- The inclined portion of the reflective metal layer may be disposed between the light blocking member and the red color conversion media layer, between the light blocking member and the green color conversion media layer, and between the light blocking member and the transmissive layer.
- The OLED display may further include a blue light-cutting filter that overlaps the red color conversion media layer and the green color conversion media layer in the depth dimension of the OLED display.
- The OLED display may further include a second substrate that is disposed over the light blocking member and the reflective metal layer.
- The organic light-emitting element may include a light-emitting element layer, and the light-emitting element layer may include a plurality of blue emission layers that respectively correspond to the red color conversion media layer, the green color conversion media layer, and the transmissive layer.
- The red color conversion media layer and the green color conversion media layer may respectively include at least one of the quantum dot and the phosphor, and the transmissive layer may not include the quantum dot and the phosphor.
- At least one of the red color conversion media layer, the green color conversion media layer, and the transmissive layer may include a plurality of scatterers.
- The reflective metal layer may include a plurality of protrusions.
- The OLED display may further include an auxiliary layer that is disposed over the reflective metal layer, wherein the auxiliary layer may include a protrusion-depression structure that corresponds to the plurality of protrusions.
- The organic light-emitting element may include: a first electrode disposed over the insulating layer; a light-emitting element layer disposed over the first electrode; and a second electrode disposed over the light-emitting element layer. A top surface of the insulating layer may have a structure that is smooth.
- According to at least one of the disclosed embodiments, the OLED display with improved color reproducibility and reduced color shift can be implemented.
-
FIG. 1 is a cross-sectional view of an OLED display according to an exemplary embodiment. -
FIG. 2 is a cross-sectional view of a green pixel area in the exemplary embodiment ofFIG. 1 . -
FIG. 3 is a cross-sectional view of a blue pixel area in the exemplary embodiment ofFIG. 1 . -
FIG. 4 is a cross-sectional view of an organic light-emitting element of the OLED display ofFIG. 1 . -
FIG. 5 is a cross-sectional view of a tandem structure in which the organic light-emitting element ofFIG. 4 is modified. -
FIG. 6 is a schematic cross-sectional view of a path of light generated in an emission layer of the OLED display ofFIG. 1 . -
FIG. 7 is a cross-sectional view of an electrode including a protrusion-depression structure in the exemplary embodiment ofFIG. 1 . -
FIG. 8 is a cross-sectional view of an OLED display according to an exemplary embodiment. -
FIG. 9 is a cross-sectional view of an OLED display according to an exemplary embodiment. -
FIG. 10 is a cross-sectional view of a reflective metal layer including a protrusion-depression structure in the exemplary embodiment ofFIG. 9 . - Embodiments will be described more fully hereinafter with reference to the accompanying drawings. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present disclosure.
- Parts that are irrelevant to the description will be omitted to clearly describe the present disclosure, and like reference numerals designate like elements throughout the specification.
- Further, in the drawings, the size and thickness of each element are arbitrarily illustrated for ease of description, and the present disclosure is not necessarily limited to those illustrated in the drawings. In the drawings, the thickness of layers, films, panels, regions, etc. are exaggerated for clarity. In the drawings, for ease of description, the thicknesses of some layers and regions are exaggerated.
- In this disclosure, the term “substantially” includes the meanings of completely, almost completely or to any significant degree under some applications and in accordance with those skilled in the art. Moreover, “formed, disposed over positioned over” can also mean “formed, disposed or positioned on.” The term “connected” includes an electrical connection.
- Further, throughout the specification, the word “on a plane” means viewing a target portion from the top, and the word “on a cross-section” means viewing a cross-section formed by vertically cutting a target portion from the side.
-
FIG. 1 is a cross-sectional view of anOLED display 10 according to an exemplary embodiment.FIG. 2 is a cross-sectional view of a green pixel area in the exemplary embodiment ofFIG. 1 .FIG. 3 is a cross-sectional view of a blue pixel area in the exemplary embodiment ofFIG. 1 .FIG. 4 is a cross-sectional view of an organic light-emitting element of the OLED display ofFIG. 1 . - Referring to
FIG. 1 , the OLED display includes 10 abuffer layer 55 disposed over afirst substrate 50. The first substrate may be transparent. - The
buffer layer 55 may perform a function of preventing diffusion of metal atoms, impurities, and the like from thefirst substrate 50. For example, thebuffer layer 55 may include a silicon oxide, a silicon nitride, a silicon oxynitride, a silicon oxycarbide, a silicon carbonitride, etc. Thebuffer layer 55 may be omitted. - A semiconductor layer is disposed over the
buffer layer 55. The semiconductor layer may include a plurality of extrinsic regions including an n-type or p-type conductive impurity, and at least one intrinsic region including no conductive impurity. - In the semiconductor layer, the extrinsic regions includes source and drain
regions channel region 85 is provided between thesource region 75 and thedrain region 80. Alternatively, theextrinsic regions - A
gate insulating layer 65 is disposed over the semiconductor layer and thebuffer layer 55. Thegate insulating layer 65 can be made of a silicon oxide or a silicon nitride. - A
gate electrode 70 is disposed over thegate insulating layer 65. Thegate electrode 70 is disposed over a portion of thegate insulating layer 65 below which the semiconductor layer is disposed. - Though not illustrated, along with the
gate electrode 70, a gate line connected to thegate electrode 70 is disposed over thegate insulating layer 65. - An interlayer insulating
layer 90 covering thegate electrode 70 is disposed over thegate insulating layer 65. The interlayer insulatinglayer 90 may be formed overgate insulating layer 65 to have a uniform thickness according to a profile of thegate electrode 70. Accordingly, a step portion adjacent to thegate electrode 70 may be formed in theinterlayer insulating layer 90. A silicon compound including a silicon oxide, a silicon nitride, a silicon oxynitride, etc. may be used to form theinterlayer insulating layer 90. The interlayer insulatinglayer 90 may perform a function of insulating thegate electrode 70 from source and drainelectrodes - The
source electrode 95 and thedrain electrode 100 are disposed over the interlayer insulatinglayer 90. The source and drainelectrodes gate electrode 70 while having a predetermined gap therebetween, and are disposed adjacent to thegate electrode 70. For example, the source and drainelectrodes layer 90 disposed over the source and drainregions interlayer insulating layer 90 disposed over thegate electrode 70. In addition, the source and drainelectrodes layer 90 such that they are respectively connected to the source and drainregions - The source and drain
electrodes - Though not illustrated, a data line crossing the gate line is disposed over the interlayer insulating
layer 90 such that it is connected to thesource electrode 95. - A
passivation layer 105 is disposed over thesource electrode 95 and thedrain electrode 100. Thepassivation layer 105 may have a sufficient thickness to completely cover thesource electrode 95 and thedrain electrode 100. Thepassivation layer 105 may include an organic material, an inorganic material, etc. - In some embodiments, as shown in
FIG. 1 , theOLED display 10 includes an insulatinglayer 110 having an firstinclined portion 120 and disposed over thepassivation layer 105. A contact hole, which also penetrates thepassivation layer 105 to partially expose thedrain electrode 100, is formed in the insulatinglayer 110. Thedrain electrode 100 may be electrically connected to afirst electrode 125 to be described below via the contact hole. - The insulating
layer 110 according to the current exemplary embodiment has a partially depressed portion. The partially depressed portion may, as shown inFIG. 2 , expose some of a top surface of thepassivation layer 105. A side surface connecting the partially depressed portion of the insulatinglayer 110 to the other portion of the insulatinglayer 110 that is not depressed may form the firstinclined portion 120. In the current exemplary embodiment, the firstinclined portion 120 has a first inclination angle θ1, and the first inclination angle θ1 may be an acute angle, i.e., greater than 0 degrees and smaller than 90 degrees. The first inclination angles θ1 of the three respective emission areas DA illustrated inFIG. 1 are illustrated to be the same as each other, but in order to improve color shift associated with a viewing angle, the inclination angles of the respective emission areas may be designed to be different from each other. - The
first electrode 125 is disposed over the insulatinglayer 110. Thefirst electrode 125 is filled into the contact hole described above such that it is connected to thedrain electrode 100. In the current exemplary embodiment, thefirst electrode 125 covers the partially depressed portion of the insulatinglayer 110, and includes an secondinclined portion 126 that is disposed along the firstinclined portion 120. The secondinclined portion 126 of thefirst electrode 125 may be inclined based on a surface that is substantially parallel to thefirst substrate 50. In this case, the secondinclined portion 126 of thefirst electrode 125 may cover most of the firstinclined portion 120 of the insulatinglayer 110. In addition, as illustrated inFIG. 2 , thefirst electrode 125 may contact the top surface of thepassivation layer 105 in the partially depressed portion of the insulatinglayer 110. - The OLED display including the insulating
layer 110 having the firstinclined portion 120 as in the current exemplary embodiment may be a top emission type in which light is finally emitted in a direction toward the insulatinglayer 110 from thefirst substrate 50. In this case, thefirst electrode 125 may include a reflective material. For example, thefirst electrode 125 may include a metal such as aluminum, silver, platinum, gold (Au), chromium (Cr), tungsten (W), molybdenum (Mo), titanium (Ti), palladium (Pd), and iridium (Ir), an alloy thereof, etc. They may be used alone or in combination. In addition, thefirst electrode 125 may have a single-layered structure or a multi-layered structure including the metal and/or the alloy described above. Alternatively, thefirst electrode 125 may have a structure such as a triple layer structure of silver (Ag)/indium tin oxide (ITO)/silver (Ag). - A
pixel defining layer 130 is disposed over the insulatinglayer 110 and thefirst electrode 125. Thepixel defining layer 130 may overlap a side surface of the firstinclined portion 120 in the depth dimension of the OLED display. Thepixel defining layer 130 may be formed of an organic material, an inorganic material, etc. For example, thepixel defining layer 130 may include an organic material such as a photoresist, a polyacrylate resin, a polyimide resin, an acryl-based resin, etc., or an inorganic material such as a silicon compound. In one exemplary embodiment, thepixel defining layer 130 may also be formed of a photoresist including a black pigment, in which case thepixel defining layer 130 may serve as a light blocking member. - Scattering particles having a nano-structure may be dispersed in the
pixel defining layer 130. The scattering particles may include at least one selected from the group consisting of inorganic particles and polymer particles. For example, the scattering particles may include inorganic particles such as silica, TiO2, ZrO2, etc., or polymer particles such as polystyrene, polymethyl methacrylate (PMMA), etc. - An
opening 132 exposing some of thefirst electrode 125 is formed in thepixel defining layer 130. A side surface of thepixel defining layer 130 formed by theopening 132 may have an inclined structure, and an inclination angle of the inclined structure may be substantially the same or similar to the first inclination angle θ1 of the insulatinglayer 110. A range being substantially the same or similar may correspond to a difference being greater than 0 degrees and smaller than about 5 degrees. Unlike the exemplary embodiment described above, the inclination angle of thepixel defining layer 130 having the inclined structure may be different from the first inclination angle θ1 regardless of the first inclination angle θ1 of the insulatinglayer 110. - The
pixel defining layer 130 may define an emission area DA and a non-emission area PA in the OLED display. An area where theopening 132 of thepixel defining layer 130 is disposed corresponds to the emission area DA, while an area where thepixel defining layer 130 except for theopening 132 is disposed corresponds to the non-emission area PA. The emission area DA may correspond to a portion of anorganic element layer 135 to be described below from which light is emitted, while the non-emission area PA may correspond to the rest of the area other than the emission area DA. - Most of the first
inclined portion 120 of the insulatinglayer 110 is disposed in the emission area DA, and thefirst electrode 125 is disposed in the emission area DA to cover a side surface of the firstinclined portion 120. In this case, thepixel defining layer 130 covers a portion of thefirst electrode 125 in the emission area DA that covers the side surface of the firstinclined portion 120. - A light-emitting
element layer 135 is disposed over thefirst electrode 125 that is disposed in the emission area DA, and asecond electrode 145 is disposed over the light-emittingelement layer 135. Thefirst electrode 125, the light-emittingelement layer 135, and thesecond electrode 145 may configure the organic light-emitting element. - In the exemplary embodiment illustrated in
FIG. 1 , the light-emittingelement layer 135 extends along the side surface of the inclined structure of thepixel defining layer 130 such that it is disposed over some of a top surface of thepixel defining layer 130. However, in a modified exemplary embodiment, the light-emittingelement layer 135 is disposed only in a portion of thefirst electrode 125 substantially exposed by theopening 132, or is disposed only in a portion of thefirst electrode 125 exposed by theopening 132 and extends therefrom to be disposed only at an inclined side surface of thepixel defining layer 130. - The light-emitting
element layer 135 according to the current exemplary embodiment included a multi-layered structure including a hole injection layer, a hole transporting layer, an organic emission layer, an electron transporting layer, an electron injection layer, etc. The organic emission layer may be formed in each pixel by laminating a material for generating blue light or by laminating a plurality of light-emitting materials for generating white light. - In this regard, an organic light-emitting element according to an exemplary embodiment of the present disclosure will now be described with reference to
FIG. 4 . - Referring to
FIG. 4 , the organic light-emitting element includes ahole transporting region 1351 disposed over thefirst electrode 125, anorganic emission layer 1354 disposed over thehole transporting region 1351, anelectron transporting region 1355 disposed over theorganic emission layer 1354, and thesecond electrode 145 disposed over theelectron transporting region 1355. - The
hole transporting region 1351 may include an auxiliary layer that is disposed between thefirst electrode 125 and theemission layer 1354. Thehole transporting region 1351 may include at least one of the hole transporting layer and the hole injection layer. The hole transporting layer may perform a function of efficiently transporting holes transferred from thefirst electrode 125. The hole transporting layer may include an organic material. For example, the hole transporting layer may include N,N-dinaphthyl-N,N′-diphenyl benzidine (NPD), TPD (N,N′-bis-(3-methylphenyl)-N,N′-bis-(phenyl)-benzidine), s-TAD, 4,4′,4″-tris-(N-3-methylphenyl-N-phenyl-amino)-triphenylamine (MTDATA), and the like, but it is not limited thereto. - The
organic emission layer 1354 may include a material that emits blue light. A material for forming theorganic emission layer 1354 is not specifically limited. Specifically, theorganic emission layer 1354 may be made of oxadiazole dimer dyes (bis-DAPOXP), spiro compounds (spiro-DPVBi, spiro-6P), triarylamine compounds, bis(styryl)amine (DPVBi, DSA), 4,4′-bis(9-ethyl-3-carbazovinylene)-1,1′-biphenyl (BCzVBi), perylene, 2,5,8,11-tetra-tert-butylperylene (TPBe), 9H-carbazol-3,3′-(1,4-phenylene-di-2,1-ethene-diyl)bis[9-ethyl-9C] (BCzVB), 4,4-bis[4-(di-p-tolylamino)styryl]biphenyl (DPAVBi), 4-(di-p-tolylamino)-4′-[(di-p-tolylamino)styryl]stilbene (DPAVB), 4,4′-bis[4-(diphenylamino)styryl]biphenyl (BDAVBi), bis(3,5-difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl)iridium III (FIrPic), etc. - The
organic emission layer 1354 may further include a dopant that is added to a host. -
FIG. 5 is a cross-sectional view of a tandem structure in which the organic light-emitting element ofFIG. 4 is modified. - Referring to
FIG. 5 , the organic light-emitting element according to the current exemplary embodiment has a tandem type of structure. For example, theorganic emission layer 1354 may include twolayers layers layers layers organic emission layer 1354 may include three layers that respectively emit different colors, and in this case, the three layers may respectively emit red, green, and blue or blue, yellow, and blue. - Though not illustrated, a charge generation layer may be disposed between the two
layers - Referring back to
FIG. 4 , theelectron transporting region 1355 may be disposed over theorganic emission layer 1354. Theelectron transporting region 1355 may include the auxiliary layer that is disposed between theorganic emission layer 1354 and thesecond electrode 145. Theelectron transporting region 1355 may include at least one of the electron transporting layer and the electron injection layer. In this case, the electron transporting layer may include an organic material. For example, the electron transporting layer may be made of at least one selected from a group of tris(8-hydroxyquinolino)aluminum (Alq3), 2-[4-biphenyl-5-[4-tert-butylphenyl]]-1,3,4-oxadiazole (PBD), 1,2,4-triazole (TAZ), spiro-2-[4-biphenyl-5-[4-tert-butylphenyl]]-1,3,4-oxadiazole (spiro-PBD), and 8-hydroxyquinoline beryllium salt (BAlq), but it is not limited thereto. - Referring back to
FIG. 1 , thesecond electrode 145 is disposed over the light-emittingelement layer 135 and thepixel defining layer 130. Thesecond electrode 145 may include a transparent conductive material. For example, thesecond electrode 145 may include an indium tin oxide, an indium zinc oxide, a zinc tin oxide, a zinc oxide, a tin oxide, a gallium oxide, etc., or may include Liq/Al. They may be used alone or in combination. - As shown in
FIG. 1 , thesecond electrode 145 may be extended from the emission area DA to the non-emission area PA. Thesecond electrode 145 is not limited thereto, and it may be disposed in the emission area DA or only at a top surface of the light-emittingelement layer 135. - A
capping layer 150 is disposed over thesecond electrode 145. Thecapping layer 150 may be extended from the emission area DA to the non-emission area PA. Thecapping layer 150 may be formed of an organic material, an inorganic material, etc. For example, thecapping layer 150 may include a photoresist, an acryl-based polymer, a polyimide-based polymer, a polyamide-based polymer, a siloxane-based polymer, a photosensitive acryl carboxylic group-containing polymer, a novolac resin, an alkali soluble resin, a silicon oxide, a silicon nitride, a silicon oxynitride, a silicon oxycarbide, a silicon carbonitride, aluminum, magnesium, zinc, hafnium, zirconium, titanium, tantalum, an aluminum oxide, a titanium oxide, a tantalum oxide, a magnesium oxide, a zinc oxide, a hafnium oxide, a zirconium oxide, a titanium oxide, etc. They may be used alone or in combination. - Color conversion layers 340R and 340G and a
transmissive layer 340B are disposed over thecapping layer 150. The color conversion layers 340R and 340G include a red colorconversion media layer 340R and a green colorconversion media layer 340G. Alight blocking member 372 is disposed between the neighboring red and green colorconversion media layers conversion media layer 340R and thetransmissive layer 340B, and between the green colorconversion media layer 340G and thetransmissive layer 340B. Thelight blocking member 372 may more effectively prevent color mixture that is generated between the adjacent colorconversion media layers conversion media layers transmissive layer 340B. - A green pixel area including the green color
conversion media layer 340G and a red pixel area having a configuration substantially similar to that of the green pixel area will now be described with reference toFIG. 2 . - Referring to
FIGS. 1 and 2 , aband pass filter 350 is disposed between thecapping layer 150 and the green colorconversion media layer 340G. Theband pass filter 350 is also disposed between the neighboring colorconversion media layers conversion media layers transmissive layer 340B, and in this case, may be disposed between asecond substrate 310 and alight blocking member 372 to be described below in a direction substantially perpendicular to thefirst substrate 50. Theband pass filter 350 may more efficiently provide light that is received from theorganic emission layer 1354, and may be omitted. - An
auxiliary metal layer 362 is disposed between the green colorconversion media layer 340G and thelight blocking member 372. Theauxiliary metal layer 362 may be a metal material that can reflect light, and may increase an amount of light emitted to a user by reflecting light incident on theauxiliary metal layer 362 back to the colorconversion media layers transmissive layer 340B, or thesecond substrate 310. - A blue light-cutting
filter 322 is disposed over the green colorconversion media layer 340G. The blue light-cuttingfilter 322 is also disposed over the red colorconversion media layer 340R. The blue light-cuttingfilter 322 performs a function to be described below. When theorganic emission layer 1354 including a material for emitting blue is used, color mixture is prevented from being generated during a process of implementing green when blue light passes through the green colorconversion media layer 340G and the red colorconversion media layer 340R. - The blue light-cutting
filter 322 may be made of a mixture of any one of BiO2, ZnO, and Ce2O3 and any one of CaCO3, ZrO2, TiO2, and Ar2O3. A material for forming the blue light-cuttingfilter 322 is not limited to the examples described above, and any materials that can block blue light may be applied. - The green color
conversion media layer 340G may convert blue light provided from theorganic emission layer 1354 to green light. The green colorconversion media layer 340G may include a green phosphor, and the green phosphor may be at least one of yttrium aluminum garnet (YAG), (Ca, Sr, Ba)2SiO4, SrGa2S4, BAM, α-SiAlON, β-SiAlON, Ca3Sc2Si3O12, Tb3Al5O12, BaSiO4, CaAlSiON, and (Sr1-xBax)Si2O2N2. In this case, the x may be a random number between 0 and 1. - The red color
conversion media layer 340R may convert blue light provided from theorganic emission layer 1354 to red light. For this purpose, the red colorconversion media layer 340R may include a red phosphor, and the red phosphor may be at least one of (Ca, Sr, Ba)S, (Ca, Sr, Ba)2Si5N8, CaAlSiN3, CaMoO4, and Eu2Si5N8. - In addition, the red color
conversion media layer 340R and the green colorconversion media layer 340G may include a color-converting quantum dot. The quantum dot may be selected from a group II-VI compound, a group III-V compound, a group IV-VI compound, a group IV element, a group IV compound, and a combination thereof. - The group II-VI compound may be selected from: a two-element compound selected from a group of CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and a mixture thereof; a three-element compound selected from a group of CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, and a mixture thereof; and a four-element compound selected from a group of HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, and a mixture thereof. The group III-V compound may be selected from: a two-element compound selected from a group of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and a mixture thereof; a three-element compound selected from a group of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InNAs, InPSb, GaAlNP, and a mixture thereof; and a four-element compound selected from a group of GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInNAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, and a mixture thereof. The group IV-VI compound may be selected from: a two-element compound selected from a group of SnS, SnSe, SnTe, PbS, PbSe, PbTe, and a mixture thereof; a three-element compound selected from a group of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, and a mixture thereof; and a four-element compound selected from a group of SnPbSSe, SnPbSeTe, SnPbSTe, and a mixture thereof. The group IV element may be selected from a group of Si, Ge, and a mixture thereof. The group IV compound may be a two-element compound selected from a group of SiC, SiGe, and a mixture thereof.
- In this case, the two-element compound, the three-element compound, or the four-element compound may exist in particles at a uniform concentration, or in the same particle while being divided to have partially different concentration distributions. Alternatively, it may have a core/shell structure where one quantum dot encloses another quantum dot. An interface between the core and the shell may have a concentration gradient, such that a concentration of an element existing in the shell gradually decreases closer to a center of the interface.
- The quantum dot may have a full width at half maximum (FWHM) of the light-emitting wavelength spectrum that is less than about 45 nm, for example, less than about 40 nm, or less than about 30 nm. In this range, color purity or color reproducibility may be improved. In addition, since light emitted via the quantum dot is emitted in all directions, a viewing angle of light may be improved. However, depending on the embodiment, the FWHM can be less than about 45 nm.
- In addition, the quantum dot is not specifically limited to have shapes that are generally used in the technical field related to the present disclosure, and more specifically, may have a shape such as a nano-particle having a spherical shape, a pyramid shape, a multi-arm shape, or a cubic shape, or may be a nanotube, a nanowire, a nanofiber, a planar nano-particle, etc.
- A blue pixel area including the
transmissive layer 340B will now be described with reference toFIG. 3 . - The
transmissive layer 340B may be made of a transparent polymer, and may transmit blue light provided from theorganic emission layer 1354 to exhibit blue. Thetransmissive layer 340B corresponding to a region for emitting blue includes a material that emits received blue even without a separate phosphor or a quantum dot. For example, thetransmissive layer 340B includes a polymer such as a photosensitive resin or TiO2. - In the current exemplary embodiment, the
transmissive layer 340B further includesscatterers 335. Thescatterers 335 may make luminance of light emitted from thetransmissive layer 340B uniform at the front and at the side. Thescatterers 335 may be made of any materials that can uniformly scatter light, and as an example, may be any one of silica, TiO2, ZrO2, Al2O3, In2O3, ZnO, SnO2, Sb2O3, and ITO. A size of thescatterer 335 may have a range of Equation 1. -
λ/10<PSQD<5λ (Equation 1) - In Equation 1, λ is a light-emitting wavelength (nanometer) of the phosphor or the quantum dot, and PSQD represents an aggregated particle size (nanometer) of the phosphor or the quantum dot.
- As shown in
FIGS. 1 and 3 , thescatterers 335 are described to be included in thetransmissive layer 340B, but as a modified example, the scatterers may also be included in the red colorconversion media layer 340R and the green colorconversion media layer 340G. - Referring to
FIGS. 1 to 3 , thesecond substrate 310 is disposed over the red colorconversion media layer 340R, the green colorconversion media layer 340G, and thetransmissive layer 340B. Though not illustrated, a λ/4 polarizer, which prevents reflection of external light, may be further included on thesecond substrate 310. -
FIG. 6 is a schematic cross-sectional view of a path of light generated in an emission layer of the OLED display ofFIG. 1 . - Referring to
FIG. 6 , the inclined structure included in thefirst electrode 125 prevents light from being totally reflected, and the light may be reflected by thefirst electrode 125 such that it is transmitted to the color conversion layer including the colorconversion media layers transmissive layer 340B. - Accordingly, in the OLED display according to the current exemplary embodiment, light generated from the light-emitting
element layer 135 can be totally reflected between thefirst electrode 125 and thesecond electrode 145 to prevent light loss, and light-emitting efficiency can be maximized by the color conversion layer and the transmissive layer that are disposed over the organic light-emitting element. Since the color conversion layer according to the current exemplary embodiment is formed to include at least one of the phosphor and the quantum dot, color shift which is inherent in conventional OLED displays can be minimized. -
FIG. 7 is a cross-sectional view of an electrode including a protrusion-depression structure in the exemplary embodiment ofFIG. 1 . - Referring to
FIG. 7 , a protrusion-depression structure 115 is formed at a surface of the insulatinglayer 110 that has an firstinclined portion 120. Due to the protrusion-depression structure 115, a surface of thefirst electrode 125 may have aprotrusion 116. Theprotrusion 116 may have various planar shapes such as circular, oval, rhombus, and triangular shapes, as well as a quadrangular shape. Since thefirst electrode 125 has theprotrusion 116, light generated from the light-emittingelement layer 135 can be reflected to further improve luminous efficiency of the OLED display. -
FIG. 8 is a cross-sectional view of anOLED display 20 according to another exemplary embodiment. In theOLED display 20 ofFIG. 8 , the elements disposed between thefirst substrate 50 and thesecond electrode 145 are substantially the same as those of theOLED display 10 ofFIG. 1 . However, since elements including a color conversion layer and a transmissive layer are different, only differences will now be described. - Referring to
FIG. 8 , the color conversion layer including a red colorconversion media layer 540R and a green color conversion media layer 540, and atransmissive layer 540B are disposed over thesecond electrode 145. Most of the color conversion layer and thetransmissive layer 540B are disposed in anopening 132 betweenpixel defining layers 130. - A blue light-cutting
filter 522 is disposed over the red colorconversion media layer 540R and the green colorconversion media layer 540G. Acapping layer 550 is disposed over the blue light-cuttingfilter 522 and thetransmissive layer 540B. - In addition to the differences described above, all the details described in
FIGS. 1 to 7 may be applied unless they contradict the exemplary embodiment ofFIG. 8 . -
FIG. 9 is a cross-sectional view of anOLED display 30 according to an exemplary embodiment. In theOLED display 30 ofFIG. 9 , the elements disposed between thefirst substrate 50 and thepassivation layer 105 in a direction substantially perpendicular to thefirst substrate 50 are substantially the same as those of theOLED display 10 ofFIG. 1 . However, since elements disposed over the insulatinglayer 110 are different, only differences will now be described. - Referring to
FIG. 9 , a top surface of the insulatinglayer 110 may not have an inclined portion but may have a structure that is smooth in most of the region. An organic light-emitting element, which includes first andsecond electrodes element layer 135, is disposed over an insulatinglayer 110. Specifically, thefirst electrode 125 is disposed over the insulatinglayer 110, and thefirst electrode 125 may have a structure that is smooth based on a surface substantially parallel to thefirst substrate 50. Thefirst electrode 125 may include a transparent conductive material for bottom emission to be described below. For example, thefirst electrode 125 may include an indium tin oxide, an indium zinc oxide, a zinc tin oxide, a zinc oxide, a tin oxide, a gallium oxide, etc. They may be used alone or in combination. - A
pixel defining layer 130 is disposed over the insulatinglayer 110 and thefirst electrode 125, and anopening 132 exposing some of thefirst electrode 125 is formed in thepixel defining layer 130. A side surface of thepixel defining layer 130 formed the by opening 132 may have an inclined structure, and a light-emittingelement layer 135 is disposed in theopening 132. Thesecond electrode 145 is disposed over the light-emittingelement layer 135, and thesecond electrode 145 may include a transparent conductive material. - A
capping layer 150 is disposed over thesecond electrode 145. A color conversion layer including a red colorconversion media layer 740R and a green colorconversion media layer 740G, and atransmissive layer 740B are disposed over thecapping layer 150. Alight blocking member 772 is disposed between the adjacent red and green colorconversion media layers conversion media layer 740R and thetransmissive layer 740B, and between the green colorconversion media layer 740G and thetransmissive layer 740B. A blue light-cuttingfilter 722 may be disposed between the red colorconversion media layer 740R and thecapping layer 150 and between the green colorconversion media layer 740G and thecapping layer 150. - The
OLED display 30 includes areflective metal layer 780 on top of the red and green colorconversion media layers transmissive layer 740B. Thereflective metal layer 780 includes a material that has a reflective property. For example, thereflective metal layer 780 may include a metal such as aluminum (Al), silver (Ag), platinum (Pt), gold (Au), chromium (Cr), tungsten (W), molybdenum (Mo), titanium (Ti), palladium (Pd), or iridium (Ir), and an alloy thereof. They may be used alone or in combination. In addition, thereflective metal layer 780 may be formed to have a single-layered structure or a multi-layered structure including the metal and/or the alloy thereof described above. Alternatively, thereflective metal layer 780 may have a triple layer structure of silver (Ag)/indium tin oxide (ITO)/silver (Ag). - In the current exemplary embodiment, the
reflective metal layer 780 has aninclined portion 720. Theinclined portion 720 may be disposed between thelight blocking member 772 and the red colorconversion media layer 740R, between thelight blocking member 772 and the green colorconversion media layer 740G, and between thelight blocking member 772 and thetransmissive layer 740B. In this case, theinclined portion 720 has an inclination angle θ, and the inclination angle θ may be greater than 0 degrees and smaller than 90 degrees. Thereflective metal layer 780 having theinclined portion 720 reflects light emitted from the red and green colorconversion media layers transmissive layer 740B, thereby further improving efficiency of light finally emitted in a direction toward thefirst substrate 50 from asecond substrate 710 to be described below. - The
second substrate 710 is disposed over thereflective metal layer 780. - In addition to the differences described above, all the details described in
FIGS. 1 to 7 may be applied unless they contradict the exemplary embodiment ofFIG. 9 . -
FIG. 10 is a cross-sectional view of a reflective metal layer including a protrusion-depression structure in the exemplary embodiment ofFIG. 9 . - Referring to
FIG. 10 , a plurality ofprotrusions 716 are formed at a surface of areflective metal layer 780 having aninclined portion 720. In order to form theprotrusions 716, anauxiliary layer 790 having a protrusion-depression structure 715 may be further included between asecond substrate 710 and thereflective metal layer 780. Theauxiliary layer 790 may be an organic material. - Since the
reflective metal layer 780 has theprotrusions 716, light emitted from the red colorconversion media layer 740R, the green colorconversion media layer 740G, and thetransmissive layer 740B can be reflected, thereby further improving luminous efficiency of the OLED display. - While the inventive technology has been described in connection with exemplary embodiments, it is to be understood that the disclosure is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.
Claims (12)
1-30. (canceled)
31. An OLED display comprising:
a first substrate;
an insulating layer disposed on the first substrate;
a first electrode disposed on the insulating layer;
a pixel defining layer disposed on the insulating layer and having an opening overlapping the first electrode;
a light emission layer disposed on the first electrode and the pixel defining layer; and
a color conversion layer and a transmissive layer disposed over the light emission layer,
wherein the pixel defining layer includes an inclined portion and the light emission layer includes an inclined portion.
32. The OLED display of claim 31 , wherein the color conversion layer and the transmissive layer are respectively disposed between portions of the pixel defining layer.
33. The OLED display of claim 31 , wherein the color conversion layer includes a red color conversion media layer and a green color conversion media layer, and wherein the color conversion layer further includes a light blocking member disposed between the red and green color conversion media layers, between the red color conversion media layer and the transmissive layer, and between the green color conversion media layer and the transmissive layer.
34. The OLED display of claim 33 , wherein the light emission layer includes a plurality of blue emission layers that respectively correspond to the red and green color conversion media layers and the transmissive layer.
35. The OLED display of claim 33 , wherein the red and green color conversion media layers respectively include at least one of a quantum dot and a phosphor, and wherein the transmissive layer does not include the quantum dot and the phosphor.
36. The OLED display of claim 33 , wherein at least one of the red and green color conversion media layers and the transmissive layer includes a plurality of scatterers.
37. The OLED display of claim 31 , further comprising:
a second electrode disposed on the light emission layer; and
a capping layer disposed between the second electrode and the color conversion layer and between the second electrode and the transmissive layer.
38. The OLED display of claim 31 , further comprising a second substrate disposed over the color conversion layer and the transmissive layer.
39. The OLED display of claim 31 , wherein the light emission layer includes a blue emission layer that has a tandem structure.
40. The OLED display of claim 31 , wherein the inclined portion of the pixel defining layer is a side portion of the opening.
41. The OLED display of claim 31 , wherein the inclined portion of the pixel defining layer overlaps the inclined portion of the light emission layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17/327,477 US20210288291A1 (en) | 2015-10-30 | 2021-05-21 | Organic light-emitting diode display |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020150152548A KR102626853B1 (en) | 2015-10-30 | 2015-10-30 | Organic light emitting diode display |
KR10-2015-0152548 | 2015-10-30 | ||
US15/334,774 US11018323B2 (en) | 2015-10-30 | 2016-10-26 | Organic light-emitting diode display including a layer having an inclined portion |
US17/327,477 US20210288291A1 (en) | 2015-10-30 | 2021-05-21 | Organic light-emitting diode display |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/334,774 Continuation US11018323B2 (en) | 2015-10-30 | 2016-10-26 | Organic light-emitting diode display including a layer having an inclined portion |
Publications (1)
Publication Number | Publication Date |
---|---|
US20210288291A1 true US20210288291A1 (en) | 2021-09-16 |
Family
ID=58635656
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/334,774 Active 2038-06-08 US11018323B2 (en) | 2015-10-30 | 2016-10-26 | Organic light-emitting diode display including a layer having an inclined portion |
US17/327,477 Pending US20210288291A1 (en) | 2015-10-30 | 2021-05-21 | Organic light-emitting diode display |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/334,774 Active 2038-06-08 US11018323B2 (en) | 2015-10-30 | 2016-10-26 | Organic light-emitting diode display including a layer having an inclined portion |
Country Status (3)
Country | Link |
---|---|
US (2) | US11018323B2 (en) |
KR (1) | KR102626853B1 (en) |
CN (1) | CN106653800B (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20230006176A1 (en) * | 2018-03-06 | 2023-01-05 | Sony Semiconductor Solutions Corporation | Light emitting element unit |
US11751437B2 (en) | 2018-12-17 | 2023-09-05 | Lg Display Co., Ltd. | Organic light emitting display panel and organic light emitting display device including the same |
US11796851B2 (en) | 2017-09-12 | 2023-10-24 | Samsung Display Co., Ltd. | Color conversion panel and display device including the same |
US12075642B2 (en) | 2018-06-06 | 2024-08-27 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, display device, and electronic device |
Families Citing this family (75)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104966789A (en) * | 2015-06-30 | 2015-10-07 | 深圳市华星光电技术有限公司 | Charge coupling layer, manufacturing method thereof and stacked OLED device |
JP2017111926A (en) * | 2015-12-15 | 2017-06-22 | 株式会社ジャパンディスプレイ | Organic electroluminescent display device |
CN108123055B (en) * | 2016-11-30 | 2020-07-21 | 财团法人工业技术研究院 | Light emitting device |
KR20180097808A (en) * | 2017-02-23 | 2018-09-03 | 삼성디스플레이 주식회사 | Display apparatus and method of manufacturing the same |
CN106876432B (en) * | 2017-02-24 | 2019-11-26 | 深圳市华星光电技术有限公司 | A kind of OLED display device and OLED display |
US10411213B2 (en) * | 2017-07-03 | 2019-09-10 | Shenzhen China Star Optoelectronics Technology Co., Ltd | White LED with two blue layers and a yellow layer and the display panel thereof |
KR102342052B1 (en) | 2017-08-17 | 2021-12-22 | 삼성전자주식회사 | A display assembly and a displaying apparatus using the same |
US10935842B2 (en) * | 2017-08-25 | 2021-03-02 | Nanosys, Inc. | Nanostructure based display devices |
KR102462881B1 (en) * | 2017-09-14 | 2022-11-03 | 엘지전자 주식회사 | Display device using semiconductor light emitting device |
KR20190033816A (en) | 2017-09-22 | 2019-04-01 | 삼성전자주식회사 | Display panel and display apparatus |
CN107706306B (en) | 2017-10-26 | 2020-02-04 | 京东方科技集团股份有限公司 | Organic light emitting diode display substrate, manufacturing method thereof and display device |
KR102507122B1 (en) | 2017-11-03 | 2023-03-08 | 삼성디스플레이 주식회사 | Display apparatus and method of manufacturing the same |
KR102444287B1 (en) * | 2017-11-15 | 2022-09-16 | 삼성전자주식회사 | Display apparatus and method of manufacturing the same |
KR102444611B1 (en) | 2017-12-07 | 2022-09-19 | 삼성디스플레이 주식회사 | Display device |
CN108063190B (en) * | 2017-12-11 | 2020-07-31 | 合肥鑫晟光电科技有限公司 | Display back plate, preparation method thereof and display device |
KR102521897B1 (en) * | 2017-12-26 | 2023-04-18 | 삼성디스플레이 주식회사 | Display panel, display device and fabricating method of the display panel |
CN108428722B (en) * | 2018-03-20 | 2020-08-04 | 京东方科技集团股份有限公司 | Organic light-emitting display panel and manufacturing method thereof |
CN108922867A (en) * | 2018-06-25 | 2018-11-30 | 武汉华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
KR102600928B1 (en) * | 2018-07-05 | 2023-11-14 | 삼성디스플레이 주식회사 | Light emitting display device and fabricating method of the same |
CN108899332A (en) * | 2018-07-17 | 2018-11-27 | 南方科技大学 | Micro-L ED display panel and manufacturing method thereof |
CN109445164B (en) * | 2018-09-30 | 2022-06-10 | 武汉天马微电子有限公司 | Display panel and display device |
KR102654289B1 (en) | 2018-10-05 | 2024-04-03 | 삼성디스플레이 주식회사 | Display device and manufacturing method thereof |
KR102589861B1 (en) * | 2018-11-01 | 2023-10-16 | 삼성전자주식회사 | Display device |
KR102645641B1 (en) * | 2018-11-05 | 2024-03-08 | 삼성디스플레이 주식회사 | Pixel, display device including the same, and manufacturing method thereof |
KR20200054423A (en) * | 2018-11-09 | 2020-05-20 | 삼성디스플레이 주식회사 | Display device and method of manufacturing of the same |
KR20200055846A (en) * | 2018-11-13 | 2020-05-22 | 삼성디스플레이 주식회사 | Display device |
KR102575029B1 (en) | 2018-11-14 | 2023-09-05 | 삼성디스플레이 주식회사 | Display device |
KR102087103B1 (en) | 2018-12-17 | 2020-03-10 | 엘지디스플레이 주식회사 | Organic light emitting pannel and including organic light emitting display |
US11125930B2 (en) | 2018-12-17 | 2021-09-21 | Innolux Corporation | Lighting device |
KR102087102B1 (en) * | 2018-12-17 | 2020-04-20 | 엘지디스플레이 주식회사 | Organic light emitting pannel and including organic light emitting display |
KR102075728B1 (en) * | 2018-12-17 | 2020-02-10 | 엘지디스플레이 주식회사 | Display panel |
KR20200082433A (en) | 2018-12-28 | 2020-07-08 | 엘지디스플레이 주식회사 | Display device having a refrective electrode |
KR102580167B1 (en) * | 2019-01-09 | 2023-09-21 | 삼성디스플레이 주식회사 | Display device and manufacturing method thereof |
KR20200092890A (en) * | 2019-01-24 | 2020-08-04 | 삼성전자주식회사 | Display device |
KR20200117080A (en) * | 2019-04-02 | 2020-10-14 | 삼성디스플레이 주식회사 | Display device and manufacturing method thereof |
KR102325381B1 (en) | 2019-04-15 | 2021-11-10 | 삼성디스플레이 주식회사 | Display device |
CN110323356B (en) * | 2019-05-08 | 2021-11-02 | 京东方科技集团股份有限公司 | OLED display substrate, manufacturing method and display device |
CN110085769B (en) * | 2019-05-13 | 2021-08-27 | 京东方科技集团股份有限公司 | Display panel and method for manufacturing the same |
US11456338B2 (en) * | 2019-05-21 | 2022-09-27 | Samsung Display Co., Ltd. | Display panel with color control layer including wall bases having reflective layers on sidewalls thereof |
KR102698252B1 (en) * | 2019-06-07 | 2024-08-27 | 삼성디스플레이 주식회사 | Display panel and method for manufacturing the same |
US11411198B2 (en) | 2019-06-18 | 2022-08-09 | Innolux Corporation | Electronic device |
KR20210005402A (en) | 2019-07-04 | 2021-01-14 | 삼성디스플레이 주식회사 | Display panel |
CN110265586A (en) * | 2019-07-09 | 2019-09-20 | 昆山梦显电子科技有限公司 | Display panel and its manufacturing method |
KR20210008265A (en) * | 2019-07-12 | 2021-01-21 | 삼성디스플레이 주식회사 | Display device and method of manufacturing thereof |
CN110600502B (en) * | 2019-08-05 | 2022-04-05 | 深圳市华星光电半导体显示技术有限公司 | Organic light emitting display panel and display device thereof |
CN112447926A (en) * | 2019-09-03 | 2021-03-05 | 群创光电股份有限公司 | Display device and electronic apparatus |
KR20210028806A (en) | 2019-09-04 | 2021-03-15 | 삼성디스플레이 주식회사 | Display module |
KR102690392B1 (en) * | 2019-09-11 | 2024-08-01 | 엘지디스플레이 주식회사 | Organic light emitting pannel and including organic light emitting display |
CN112530988A (en) * | 2019-09-19 | 2021-03-19 | 群创光电股份有限公司 | Electronic device and method for manufacturing electronic device |
KR102698613B1 (en) * | 2019-09-20 | 2024-08-27 | 엘지디스플레이 주식회사 | Organic light emitting pannel and including organic light emitting display |
KR20210043776A (en) * | 2019-10-11 | 2021-04-22 | 삼성디스플레이 주식회사 | Color-converting substrate, display device including the same and method for manufacturing the same |
CN110620136B (en) * | 2019-10-30 | 2022-07-19 | 京东方科技集团股份有限公司 | Display substrate and display panel comprising same |
KR20210054390A (en) * | 2019-11-05 | 2021-05-13 | 엘지디스플레이 주식회사 | Touch display device |
CN110880528B (en) * | 2019-12-16 | 2022-07-05 | 京东方科技集团股份有限公司 | OLED display panel and display device |
CN116230834A (en) * | 2019-12-17 | 2023-06-06 | 群创光电股份有限公司 | Display device |
KR20210077844A (en) | 2019-12-17 | 2021-06-28 | 삼성디스플레이 주식회사 | Display panel |
KR102509034B1 (en) * | 2020-02-13 | 2023-03-10 | 삼성디스플레이 주식회사 | Organic light emitting device and apparatus including the same |
KR20210107195A (en) * | 2020-02-21 | 2021-09-01 | 삼성디스플레이 주식회사 | Display device |
KR20210116730A (en) * | 2020-03-12 | 2021-09-28 | 삼성디스플레이 주식회사 | Display apparatus and method of manufacturing the same |
CN111384297A (en) * | 2020-03-19 | 2020-07-07 | 武汉华星光电半导体显示技术有限公司 | OLED display panel and display device |
KR20210124556A (en) | 2020-04-03 | 2021-10-15 | 삼성디스플레이 주식회사 | Display panel |
KR20210124583A (en) | 2020-04-06 | 2021-10-15 | 삼성디스플레이 주식회사 | Display panel |
CN111430444B (en) | 2020-04-30 | 2023-06-02 | 武汉华星光电半导体显示技术有限公司 | Quantum dot display panel and preparation method thereof |
JPWO2022019132A1 (en) * | 2020-07-20 | 2022-01-27 | ||
CN111799387B (en) * | 2020-08-21 | 2024-01-05 | 京东方科技集团股份有限公司 | Display panel, manufacturing method thereof and display device |
CN111987133B (en) * | 2020-09-02 | 2022-05-27 | 京东方科技集团股份有限公司 | Mirror display panel and mirror display device |
CN114843422A (en) * | 2020-09-03 | 2022-08-02 | 京东方科技集团股份有限公司 | Display panel, manufacturing method thereof and display device |
CN114256297A (en) * | 2020-09-25 | 2022-03-29 | 京东方科技集团股份有限公司 | Display panel and display device |
CN112599705B (en) * | 2020-12-14 | 2024-04-19 | 京东方科技集团股份有限公司 | Display panel and preparation method thereof |
CN114639793A (en) * | 2020-12-16 | 2022-06-17 | 京东方科技集团股份有限公司 | Display substrate, preparation method thereof and display device |
KR20220097772A (en) * | 2020-12-31 | 2022-07-08 | 삼성디스플레이 주식회사 | Display panel, display device including the same, and method for manufacturing the display panel |
KR20220125828A (en) * | 2021-03-03 | 2022-09-15 | 삼성디스플레이 주식회사 | Display device and method for fabricating the same |
CN114256317B (en) * | 2021-12-22 | 2024-08-27 | 湖北长江新型显示产业创新中心有限公司 | Display panel and display device |
CN117561605A (en) * | 2022-04-27 | 2024-02-13 | 京东方科技集团股份有限公司 | Display device and display panel |
WO2024100801A1 (en) * | 2022-11-09 | 2024-05-16 | シャープディスプレイテクノロジー株式会社 | Display device |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050225232A1 (en) * | 2004-04-07 | 2005-10-13 | Eastman Kodak Company | Color OLED with added color gamut pixels |
US20070201056A1 (en) * | 2006-02-24 | 2007-08-30 | Eastman Kodak Company | Light-scattering color-conversion material layer |
US20100073615A1 (en) * | 2008-09-22 | 2010-03-25 | Hitachi Displays, Ltd. | Liquid crystal display device and fabrication method thereof |
US20100097295A1 (en) * | 2008-10-17 | 2010-04-22 | Won-Kyu Kwak | Organic light emitting display |
US20110298953A1 (en) * | 2010-06-07 | 2011-12-08 | Sony Corporation | Image display apparatus, electronic apparatus, image display system, image acquisition method and program |
US20130001603A1 (en) * | 2011-06-29 | 2013-01-03 | Jae-Ik Lim | Methods of forming inclined structures on insulation layers, organic light emitting display devices and methods of manufacturing organic light emitting display devices |
US20140166996A1 (en) * | 2012-12-14 | 2014-06-19 | Samsung Display Co., Ltd. | Organic light-emitting display apparatus and method of manufacturing the same |
US20140353630A1 (en) * | 2013-05-31 | 2014-12-04 | Samsung Display Co., Ltd. | Organic white light emitting display apparatus |
US9076739B2 (en) * | 2013-06-04 | 2015-07-07 | Samsung Display Co., Ltd. | Organic light-emitting display apparatus and method for manufacturing the same |
US20160190221A1 (en) * | 2014-12-29 | 2016-06-30 | Samsung Display Co., Ltd. | Thin-film transistor array substrate and organic light-emitting display apparatus including the same |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59198754A (en) * | 1983-04-26 | 1984-11-10 | Toshiba Corp | Solid-state color image pickup device |
US6608439B1 (en) | 1998-09-22 | 2003-08-19 | Emagin Corporation | Inorganic-based color conversion matrix element for organic color display devices and method of fabrication |
US7042024B2 (en) * | 2001-11-09 | 2006-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting apparatus and method for manufacturing the same |
US7786496B2 (en) * | 2002-04-24 | 2010-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing same |
JP4252297B2 (en) * | 2002-12-12 | 2009-04-08 | 株式会社日立製作所 | LIGHT EMITTING ELEMENT AND DISPLAY DEVICE USING THE LIGHT EMITTING ELEMENT |
KR20080067158A (en) * | 2007-01-15 | 2008-07-18 | 삼성전자주식회사 | Display device |
KR20100041122A (en) | 2008-10-13 | 2010-04-22 | 삼성전자주식회사 | Liquid crystal display |
KR20120045968A (en) | 2010-11-01 | 2012-05-09 | 엘지디스플레이 주식회사 | Liquid crystal display device |
KR101881133B1 (en) * | 2011-06-29 | 2018-07-24 | 삼성디스플레이 주식회사 | Method of forming an inclided structure in an insulation layer, organic light emitting device and method of manufcaturing an organic light emitting device |
US8502445B2 (en) * | 2011-07-18 | 2013-08-06 | Universal Display Corporation | RGBW OLED display for extended lifetime and reduced power consumption |
KR101821167B1 (en) * | 2011-08-30 | 2018-01-24 | 삼성디스플레이 주식회사 | Organic light emitting display device having a reflection structure and method of manufacturing an organic light emitting display device having a reflection structure |
KR101900954B1 (en) * | 2012-01-19 | 2018-09-21 | 삼성디스플레이 주식회사 | Organic light emitting device and manufacturing method thereof |
KR20130089102A (en) * | 2012-02-01 | 2013-08-09 | 삼성디스플레이 주식회사 | Organic light emitting display device |
KR101381353B1 (en) * | 2012-07-06 | 2014-04-04 | 삼성디스플레이 주식회사 | Organic light emitting display device and method of manufacturing the same |
KR101618685B1 (en) | 2012-10-11 | 2016-05-09 | 제일모직 주식회사 | Photosensitive resin composition for color filter and color filter using the same |
CN103811669B (en) * | 2012-11-09 | 2016-08-17 | 上海天马微电子有限公司 | Organic light emitting device, organic light emitting diode display apparatus and method of manufacturing the same |
KR102048952B1 (en) * | 2013-02-06 | 2019-11-27 | 삼성디스플레이 주식회사 | Organic light emitting display and manufacturing method thereof |
KR102021027B1 (en) * | 2013-02-28 | 2019-09-16 | 삼성디스플레이 주식회사 | Organic luminescence emitting display device |
KR102028680B1 (en) * | 2013-03-20 | 2019-11-05 | 삼성디스플레이 주식회사 | Organic light emitting diode display |
KR102056864B1 (en) * | 2013-04-09 | 2019-12-18 | 삼성디스플레이 주식회사 | Organic light emitting display apparatus providing mirror function |
KR102146070B1 (en) * | 2013-07-01 | 2020-08-21 | 삼성디스플레이 주식회사 | Organic Light Emitting Display |
JP2015050011A (en) * | 2013-08-30 | 2015-03-16 | 株式会社ジャパンディスプレイ | Electroluminescence device and method for manufacturing the same |
KR102107108B1 (en) | 2013-09-13 | 2020-05-07 | 삼성디스플레이 주식회사 | Organic light-emitting display apparatus and method for manufacturing the same |
JP2015072751A (en) * | 2013-10-01 | 2015-04-16 | 株式会社ジャパンディスプレイ | Organic el display device |
KR20150042937A (en) | 2013-10-14 | 2015-04-22 | 삼성디스플레이 주식회사 | Optical sheet, methods of manufacturing the same and display devices including the same |
KR102139577B1 (en) | 2013-10-24 | 2020-07-31 | 삼성디스플레이 주식회사 | Organic light emitting display apparatus |
JP2015138612A (en) * | 2014-01-21 | 2015-07-30 | 株式会社ジャパンディスプレイ | Organic electroluminescence display device |
KR102230006B1 (en) * | 2014-03-18 | 2021-03-19 | 삼성디스플레이 주식회사 | Organic light emitting diode display |
CN104362257B (en) * | 2014-10-22 | 2017-10-17 | 京东方科技集团股份有限公司 | A kind of top emission OLED device and preparation method thereof, display device |
-
2015
- 2015-10-30 KR KR1020150152548A patent/KR102626853B1/en active IP Right Grant
-
2016
- 2016-10-26 US US15/334,774 patent/US11018323B2/en active Active
- 2016-10-26 CN CN201610949511.7A patent/CN106653800B/en active Active
-
2021
- 2021-05-21 US US17/327,477 patent/US20210288291A1/en active Pending
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050225232A1 (en) * | 2004-04-07 | 2005-10-13 | Eastman Kodak Company | Color OLED with added color gamut pixels |
US20070201056A1 (en) * | 2006-02-24 | 2007-08-30 | Eastman Kodak Company | Light-scattering color-conversion material layer |
US20100073615A1 (en) * | 2008-09-22 | 2010-03-25 | Hitachi Displays, Ltd. | Liquid crystal display device and fabrication method thereof |
US20100097295A1 (en) * | 2008-10-17 | 2010-04-22 | Won-Kyu Kwak | Organic light emitting display |
US20110298953A1 (en) * | 2010-06-07 | 2011-12-08 | Sony Corporation | Image display apparatus, electronic apparatus, image display system, image acquisition method and program |
US20130001603A1 (en) * | 2011-06-29 | 2013-01-03 | Jae-Ik Lim | Methods of forming inclined structures on insulation layers, organic light emitting display devices and methods of manufacturing organic light emitting display devices |
US20140166996A1 (en) * | 2012-12-14 | 2014-06-19 | Samsung Display Co., Ltd. | Organic light-emitting display apparatus and method of manufacturing the same |
US20140353630A1 (en) * | 2013-05-31 | 2014-12-04 | Samsung Display Co., Ltd. | Organic white light emitting display apparatus |
US9419242B2 (en) * | 2013-05-31 | 2016-08-16 | Samsung Display Co., Ltd. | Organic white light emitting display apparatus |
US9076739B2 (en) * | 2013-06-04 | 2015-07-07 | Samsung Display Co., Ltd. | Organic light-emitting display apparatus and method for manufacturing the same |
US20160190221A1 (en) * | 2014-12-29 | 2016-06-30 | Samsung Display Co., Ltd. | Thin-film transistor array substrate and organic light-emitting display apparatus including the same |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11796851B2 (en) | 2017-09-12 | 2023-10-24 | Samsung Display Co., Ltd. | Color conversion panel and display device including the same |
US20230006176A1 (en) * | 2018-03-06 | 2023-01-05 | Sony Semiconductor Solutions Corporation | Light emitting element unit |
US12041813B2 (en) * | 2018-03-06 | 2024-07-16 | Sony Semiconductor Solutions Corporation | Light emitting element unit including varying distance between drive element gate electrodes and light emitting portions |
US12075642B2 (en) | 2018-06-06 | 2024-08-27 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, display device, and electronic device |
US11751437B2 (en) | 2018-12-17 | 2023-09-05 | Lg Display Co., Ltd. | Organic light emitting display panel and organic light emitting display device including the same |
Also Published As
Publication number | Publication date |
---|---|
US20170125740A1 (en) | 2017-05-04 |
KR102626853B1 (en) | 2024-01-18 |
US11018323B2 (en) | 2021-05-25 |
CN106653800B (en) | 2023-01-06 |
KR20170051764A (en) | 2017-05-12 |
CN106653800A (en) | 2017-05-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20210288291A1 (en) | Organic light-emitting diode display | |
US10373978B2 (en) | Light emitting display device | |
US10705271B2 (en) | Display device | |
CN106526947B (en) | Color conversion panel and display device including the same | |
US10495927B2 (en) | Display device | |
US11228012B2 (en) | Self light-emitting display device | |
US10950813B2 (en) | Optical modifier and display device including the same | |
KR102510787B1 (en) | Organic light emitting diodes display | |
KR20210129786A (en) | Color conversion panel and display device including the same, and manufacturing method thereof | |
KR20210026150A (en) | Light emitting diode(LED) display device | |
US11088237B2 (en) | Self-light emitting display device | |
US10600940B2 (en) | Display device | |
KR102429116B1 (en) | Self light emitting display device | |
KR20200036234A (en) | Self light emitting display device | |
CN111192894B (en) | Display device | |
US20230080859A1 (en) | Color conversion panel and display device including the same | |
US20220199692A1 (en) | Color filter structure and display device including the same | |
KR20210081760A (en) | Transparent light emitting diode display device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STPP | Information on status: patent application and granting procedure in general |
Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NON FINAL ACTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: FINAL REJECTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: RESPONSE AFTER FINAL ACTION FORWARDED TO EXAMINER |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: ADVISORY ACTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION |