KR20210081760A - Transparent light emitting diode display device - Google Patents

Abstract

The present invention relates to a transparent LED display device. The present invention is characterized in that the transparent area of the transparent LED display device is divided again to define a light emitting area and a transparent area, and a second LED element in the shape of a hollow cylinder or square pillar is further positioned to correspond to the light emitting area. Accordingly, it is possible to implement various image implementation modes according to the surrounding environment without lowering the transmittance of the transparent LED display device. Objects or images located on the opposite side of the transparent LED display device can be clearly distinguished, and an image implemented from the transparent LED display device can also be implemented more clearly. Accordingly, the display quality and reliability of the transparent LED display device are improved, and the transparent LED display device can realize high resolution without lowering transmittance.

Description

Transparent LED display device {Transparent light emitting diode display device}

The present invention relates to a transparent LED display device.

Recently, as display devices have become larger, the demand for flat display devices that occupy less space is increasing, and organic light emitting diodes including liquid crystal display (LCD) devices or organic light emitting diodes (OLEDs) are increasing. A display device (organic electroluminescent display (OLED) device) technology of a flat panel display device is rapidly developing.

Here, in the liquid crystal display device, the backlight unit is disposed under the liquid crystal panel to which the polarizing plate is attached to the rear and front surfaces. Accordingly, only 5% or less of the light from the light source provided in the backlight unit passes through the liquid crystal panel, thereby reducing the disadvantage in light efficiency. have

In addition, the organic light emitting display device has improved luminous efficiency compared to the liquid crystal display device, but still has a limitation in luminous efficiency and still has disadvantages in durability and/or lifespan of the display device.

Accordingly, recently, in order to overcome the above problems of the liquid crystal display and/or the organic light emitting display, an LED display using a light emitting diode (LED) as a light emitting device has been proposed. As the LED display device, a small LED such as a mini-LED or a micro-LED such as a micro-LED may be used.

Such an LED display device is a display device that implements an image by arranging an ultra-small LED such as a mini or micro in each sub-pixel, and has great advantages in terms of low power consumption and miniaturization.

In particular, recently, research on a transparent display device using such an LED display device is being actively conducted. The transparent LED display device allows a user to see an object or image located on the opposite side through the display device due to the characteristics of the transparent LED display device. It has the advantages of interior and design, and can have a variety of applications.

The transparent LED display device, which is being actively researched as described above, is intended to clearly distinguish an object or image located on the opposite side and to realize an image implemented from the display device more clearly.

The present invention is to solve the above problems, and at the same time to clearly distinguish objects or images located on the opposite side of the transparent LED display device, and at the same time to implement the image implemented from the transparent LED display device more clearly. do.

Through this, a second object is to improve the display quality and reliability of the transparent display device.

In order to achieve the object as described above, the present invention provides a substrate in which a display area provided with a first driving thin film transistor and a transparent area provided with a second driving thin film transistor are defined, and positioned corresponding to the display area, a first LED element connected to the first driving thin film transistor; and a second LED element positioned to correspond to the transparent region and connected to the second driving thin film transistor, wherein the transparent region includes a first transmissive region and A transparent LED display that is defined as a first light emitting region surrounding an edge of the first transmissive region, wherein the second LED element penetrates in correspondence to the first transmissive region and is formed of a hollow shape positioned corresponding to the first light emitting region provide the device.

Here, the display region is defined as a driving region and a non-emission region surrounding an edge of the driving region, the first LED element is positioned corresponding to the driving region, and the first LED element is a first p-type electrode and a 1-1 semiconductor layer, a first active layer, and a 1-2 semiconductor layer sequentially over the first p-type electrode, wherein the second LED device includes a second p-type electrode and the second p-type electrode It sequentially includes a 2-1 semiconductor layer and a second active layer, and the first and second semiconductor layers extend over the second active layer.

The second active layer is thicker than the first active layer, and the display region is defined as a driving region and a non-emission region surrounding an edge of the driving region, wherein the driving region includes a second transmissive region and the second It is defined as a second light emitting region surrounding the edge of the second transmissive region, and the first LED element has a hollow shape that penetrates corresponding to the second transmissive region and is positioned corresponding to the second light emitting region.

In addition, the first LED device includes a first p-type electrode and a 1-1 semiconductor layer, a first active layer, and a 1-2 semiconductor layer sequentially over the first p-type electrode, and the second LED device comprises a second p-type electrode and a 2-1 semiconductor layer and a second active layer sequentially over the second p-type electrode, and the first and second semiconductor layers extend over the second active layer, In the second LED element, a transparent resin is positioned inside the hollow to correspond to the first transmissive region.

In addition, the transparent resin includes a plurality of convex patterns, and the convex patterns are at least one of a hemispherical shape and a prismatic shape.

The display region is defined as a driving region and a non-emission region surrounding the edge of the driving region, wherein the driving region includes a third emission region, a third transmissive region, and a fourth transmissive region surrounding an edge of the third transmissive region. The hollow third LED further includes a light emitting area, wherein the first LED element is positioned to correspond to the third light emitting area, penetrated to correspond to the third transmissive area and positioned to correspond to the fourth light emitting area The device further includes a device, wherein the first LED device includes a first p-type electrode and a 1-1 semiconductor layer, a first active layer, and a 1-2 semiconductor layer sequentially over the first p-type electrode, wherein The third LED device includes a third p-type electrode and a 3-1 semiconductor layer and a third active layer sequentially over the third p-type electrode, and the first and second semiconductor layers extend over the third active layer is located

In this case, the transparent region further includes a third driving thin film transistor, and a third LED element connected to the third driving thin film transistor is further positioned below the second LED element, and the second LED element and the third LED elements emit different light.

An interlayer insulating film is positioned above the first and second driving thin film transistors, the third LED element is positioned inside a recess provided in the interlayer insulating film, and the first LED element includes a first p-type electrode and a 1-1 semiconductor layer, a first active layer, and a 1-2 semiconductor layer are sequentially disposed on the first p-type electrode, wherein the second LED device includes a second p-type electrode and an upper portion of the second p-type electrode to sequentially include a 2-1 semiconductor layer and a second active layer, and the first and second semiconductor layers extend above the second active layer.

In addition, the first LED element has a light conversion layer positioned inside the hollow to correspond to the second transmission region, the first LED element emits light of a first color, and the light conversion layer is The light of the first color is color-converted into the second color.

Here, a common electrode is positioned above the first and second LED elements, and the common electrode has an opening corresponding to the first transmissive region.

A reflective insulating film is positioned between the first and second LED elements.

As described above, according to the present invention, the transparent area of the transparent LED display device is divided into a light emitting area and a transparent area again, and a second LED element in the shape of a hollow cylinder or square column is further positioned corresponding to the light emission area. By doing so, there is an effect that various image implementation modes can be implemented according to the surrounding environment without lowering the transmittance of the transparent LED display device.

Therefore, while being able to clearly distinguish an object or image located on the opposite side of the transparent LED display device, the image implemented from the transparent LED display device can also be implemented more clearly, thereby improving the display quality and reliability of the transparent LED display device. has an improving effect.

In addition, the transparent LED display device has the effect of realizing high resolution without lowering the transmittance.

1 is a cross-sectional view schematically illustrating one sub-pixel of a transparent LED display device according to a first embodiment of the present invention.
Figure 2 is a perspective view schematically showing a second LED device according to the first embodiment of the present invention.
3A to 3C are schematic diagrams schematically showing a transmission mode and an image realization mode of the transparent LED display device according to the first embodiment of the present invention.
4A to 4B are cross-sectional views schematically showing one sub-pixel of another transparent LED display device according to the first embodiment of the present invention;
Fig. 5 is a cross-sectional view schematically showing one sub-pixel of another transparent LED display device according to the first embodiment of the present invention;
6A to 6B are schematic diagrams schematically illustrating one unit pixel of a general transparent display device;
6c to 6e are schematic diagrams schematically showing one unit pixel of the transparent LED display device according to the first embodiment of the present invention.
7 is a cross-sectional view schematically illustrating one sub-pixel of a transparent LED display device according to a second embodiment of the present invention.
8A to 8B are cross-sectional views schematically illustrating one sub-pixel of a transparent LED display device according to a third embodiment of the present invention.
Fig. 9 is a cross-sectional view schematically showing one sub-pixel of another transparent LED display device according to the third embodiment of the present invention;
10A to 10C are schematic diagrams schematically showing a transmission mode and an image realization mode of another transparent LED display device according to a third embodiment of the present invention.
11A to 11B are cross-sectional views schematically illustrating one sub-pixel of a transparent LED display device according to a fourth embodiment of the present invention.

Hereinafter, an embodiment according to the present invention will be described in detail with reference to the drawings.

- 1st embodiment -

1 is a cross-sectional view schematically illustrating one sub-pixel of a transparent LED display device according to a first embodiment of the present invention, and FIG. 2 is a schematic cross-sectional view of a second LED device according to a first embodiment of the present invention. is a perspective view.

As shown, one sub-pixel SP is divided into a display area B and a transparent area T, and the display area B and the transparent area T are the first and second LED devices, respectively. It includes first and second driving areas DA1 and DA2 corresponding to 120 and 130 , and forms a non-emission area NEA along edges of the first and second driving areas DA1 and DA2. .

In particular, in the transparent LED display device 100 according to the first embodiment of the present invention, the second driving area DA2 is defined by dividing the light emitting area EA and the transmitting area TA. The transmission area TA is positioned to correspond to the central portion of the second driving area DA2 , and the emission area EA is positioned along the edge of the transmission area TA.

At this time, in the non-emission area NEA located on one side of the first driving area DA1 of the display area B, a first switching area TrA1 in which the first driving thin film transistor DTr1 is located is defined, and is transparent. A second switching area TrA2 in which the second driving thin film transistor DTr2 is located is defined in the non-emission area NEA located at one side of the second driving area DA2 of the area T.

The first driving thin film transistor DTr1 drives the first LED element 120 positioned to correspond to the display region B, and the second driving thin film transistor DTr2 is positioned to correspond to the transparent region T The second LED element 130 is driven.

Looking at this in more detail, first and second semiconductor layers 103a and 103b are respectively positioned on the first and second switching regions TrA1 and TrA2, and the first and second semiconductor layers 103a and 103b are formed of silicon. first and second sources doped with a high concentration of impurities on both sides of the first and second active regions 102a and 102b and the first and second active regions 102a and 102b, and the central portion of which is doped with a high concentration of impurities, respectively; and drain regions 102c, 102d, 102e, and 102f.

A gate insulating layer 105 is positioned on the first and second semiconductor layers 103a and 103b.

First and second gate electrodes 104a and 104b are formed on the gate insulating layer 105 to correspond to the first and second active regions 102a and 102b of the first and second semiconductor layers 103a and 103b, respectively. The first and second gate electrodes 104a and 104b are respectively connected to the gate line.

In addition, a first interlayer insulating layer 106a is positioned above the first and second gate electrodes 104 and the gate line, and in this case, the first interlayer insulating layer 106a and the lower gate insulating layer 105 are formed with a first active layer. The first and second semiconductor layer contact holes 107a and 107b exposing the first source and drain regions 102c and 102d located on both sides of the region 102a, respectively, and the second source located on both sides of the second active region 102b. and third and fourth semiconductor layer contact holes 107c and 107d exposing the drain regions 102e and 102f, respectively.

Next, the first interlayer insulating layer 106a including the first to fourth semiconductor layer contact holes 107a, 107b, 107c, and 107d is spaced apart from each other on the first to fourth semiconductor layer contact holes 107a and 107b. First and second source and drain electrodes 109a, 109b, 109c, and 109d in contact with the first and second source and drain regions 102c, 102d, 102e, and 102f exposed through , 107c and 107d, respectively. provided

That is, on the upper portion of the first interlayer insulating film 106a, the first source and drain electrodes are in contact with the first source and drain regions 102c and 102d through the first and second semiconductor layer contact holes 107a and 107b, respectively. 109a and 109b are provided, and second source and drain electrodes 109c and 109d contacting the second source and drain regions 102e and 102f through the third and fourth semiconductor layer contact holes 107c and 107d, respectively. ) will be provided.

The first and second source electrodes 109a and 109c are respectively connected to the data line.

The first and second source and drain electrodes 109a, 109b, 109c, and 109d and the second interlayer insulating film ( 106b) is located.

At this time, the first semiconductor layer 103a and the first semiconductor layer including the first source and drain electrodes 109a and 109b and the first source and drain regions 102c and 102d in contact with the electrodes 109a and 109b. The gate insulating film 105 and the first gate electrode 104a positioned on the 103a form the first driving thin film transistor DTr1, and the second source and drain electrodes 109c and 109d and these electrodes 109c, 109d), the second semiconductor layer 103b including the second source and drain regions 102e and 102f, and the gate insulating layer 105 and the second gate electrode 104b positioned on the second semiconductor layer 103b ) constitutes the second driving thin film transistor DTr2.

And on one side of each of the first and second driving thin film transistors DTr1 and DTr2, the first and second switching thin film transistors (not shown) have the same structure as the first and second driving thin film transistors DTr1 and DTr2. positioned to be connected to the first and second driving thin film transistors DTr1 and DTr2, respectively.

Here, in the drawing, a top gate type in which the switching thin film transistor (not shown) and the driving thin film transistors DTr1 and DTr2 and the semiconductor layers 103a and 103b are formed of a polysilicon semiconductor layer or an oxide semiconductor layer is shown as an example. However, as a modification thereof, a bottom gate type made of pure and impurity amorphous silicon may be provided.

And in the second interlayer insulating layer 106b, the first and second drain contact holes PH1 exposing the first and second drain electrodes 109b and 109d of the first and second driving thin film transistors DTr1 and DTr2, respectively. , PH2 are provided, and the first and second driving thin film transistors DTr1 and DTr2 respectively are provided on the second interlayer insulating film 106b through the first and second drain contact holes PH1 and PH2. First and second connection electrodes 111 and 112 respectively connected to the first and second drain electrodes 109b and 109d are positioned.

At this time, the gate insulating layer 105 and the first and second interlayer insulating layers 106a and 106b are made of a transparent material that can transmit light.

Here, the first connection electrode 111 located in the display area B covers the entire surface of the first driving area EA1, and the second connection electrode 112 located in the transparent area T is located in the second It is positioned along the edge of the driving area DA2 , more precisely, the second connection electrode 112 is positioned to correspond to the light emitting area EA of the second driving area EA2 .

A reflective insulating layer 113 is positioned above the substrate 101 including the first and second connection electrodes 111 and 112 , and the reflective insulating layer 113 is disposed on the first and second driving regions EA1 and EA2 . Correspondingly, the first and second concave portions 113a and 113b are provided, and the first and second LED elements 120 and 130 are respectively positioned in the first and second concave portions 113a and 113b, respectively. do.

Accordingly, the reflective insulating film 113 is disposed to surround the outer surfaces of each of the first and second LED elements 120 and 130 , and the reflective insulating film 113 is formed to surround each of the first and second LED elements 120 and 130 , respectively. ) of the light emitted from the first and second LED elements 120 and 130 by reflecting the light emitted to the side of the substrate 101 to the upper portion of the first and second LED elements 120, 130, respectively, the light efficiency of plays a role in improving

The reflective insulating film 113 may be formed of an oxide or nitride having excellent electrical insulation, and may be formed of an organic insulator layer having excellent durability and ductility, excellent insulation properties, and capable of manufacturing a thick thin film.

Alternatively, the reflective insulating layer 113 may be made of an insulating material including fine particles for light reflection, and may be made of an insulating material of silicon oxide (SiOx) or silicon nitride (SiNx) in which titanium oxide (TiO2) particles are dispersed. , but not limited thereto.

The first LED element 120 positioned inside the first concave portion 113a corresponding to the first driving area DA1 of the display area B is a first p-type electrode connected to the first connection electrode 111 . 121 , and a 1-1 semiconductor layer 123 , a first active layer 125 , and a 1-2 semiconductor layer 127 sequentially positioned on the first p-type electrode 121 .

The first p-type electrode 121 may be formed as a reflective electrode using a metal having high reflectivity such as Ag, Al, Au, Cr, Ir, Mg, Nd, Ni, Pd, Pt, Rh, Ti, W, etc. , here, the first p-type electrode 121 may serve to forwardly reflect the light emitted in the opposite direction, not the front, among the light emitted from the first active layer 125 .

In addition, the first p-type electrode 121 may be formed of an alloy of two or more of metals with high reflectivity or a stacked structure of dissimilar metals, or a stacked structure of an ITO, IZO, ZnO or In2O3 film and a metal with high reflectivity. may be formed.

In addition, an adhesive layer for improving adhesion with the 1-1 semiconductor layer 123 or an ohmic connection layer for enabling ohmic connection may be further laminated.

In addition, the first p-type electrode 121 is formed to be smaller than the area of the 1-1 semiconductor layer 123 or the area of the 1-1 semiconductor layer 123 is not exposed so that the 1-1 semiconductor layer 123 is not exposed. The reason for forming the 1-1 semiconductor layer 123 so that it is not exposed is to increase the reflective surface to maximize the amount of light reflected by the reflective surface.

Here, the 1-1 semiconductor layer 123 is in contact with the first p-type electrode 121 to provide holes to the first active layer 125 . The 1-1 semiconductor layer 123 is p- It may be made of a GaN-based semiconductor material, and the p-GaN-based semiconductor material may be GaN, AlGaN, InGaN, AlInGaN, or the like. Here, Mg, Zn, Be, or the like may be used as the impurity used for doping the 1-1th semiconductor layer 123 .

In addition, the first active layer 125 positioned above the 1-1 semiconductor layer 123 may have a multi-quantum well (MQW) structure having a well layer and a barrier layer having a higher band gap than the well layer. .

The first active layer 125 may emit light when a voltage or current is applied to the 1-1 and 1-2 semiconductor layers 123 and 127 .

The first 1-2 semiconductor layer 127 is positioned on the first active layer 125 and serves to provide electrons to the first active layer 125 . The first 1-2 semiconductor layer 127 is n-GaN. It may be made of a semiconductor material, and the n-GaN semiconductor material may be GaN, AlGaN, InGaN, AlInGaN, or the like. Here, Si, Ge, Se, Te, or C may be used as the impurity used for doping the 1-2 semiconductor layer 127 .

Here, a portion of the 1-1 semiconductor layer 123 and the first active layer 125 may be removed by MESA etching, thereby exposing a portion of the 1-2 semiconductor layer 127 on the bottom surface. may do it

In addition, the second LED element 130 positioned inside the second concave portion 113b corresponding to the second driving area DA2 of the transparent area T is a second p second connected to the second connection electrode 112 . It includes a type electrode 131 , and a 2-1 th semiconductor layer 133 , a second active layer 135 , and a 2-2 semiconductor layer 137 sequentially positioned above the second p-type electrode 131 . .

The second p-type electrode 131 may be formed as a reflective electrode using a metal having high reflectivity such as Ag, Al, Au, Cr, Ir, Mg, Nd, Ni, Pd, Pt, Rh, Ti, W, etc. , here, the second p-type electrode 131 may serve to forwardly reflect the light emitted in the opposite direction, not the front, among the light emitted from the second active layer 135 .

In addition, the second p-type electrode 131 may be formed of an alloy of two or more of metals with high reflectivity or a stacked structure of dissimilar metals, or a stacked structure of an ITO, IZO, ZnO or In2O3 film and a metal with high reflectivity. may be formed.

In addition, an adhesive layer for improving adhesion to the 2-1 semiconductor layer 133 or an ohmic connection layer for enabling ohmic connection may be further laminated.

In addition, the second p-type electrode 131 is formed to be smaller than the area of the 2-1 semiconductor layer 133 or the area of the 2-1 th semiconductor layer 133 is not exposed so that the 2-1 th semiconductor layer 133 is not exposed. The reason for forming the 2-1 th semiconductor layer 133 not to be exposed is to increase the reflective surface to maximize the amount of light reflected by the reflective surface.

Here, the 2-1 th semiconductor layer 133 is in contact with the second p-type electrode 131 to provide holes to the second active layer 135 . The 2-1 th semiconductor layer 133 is p- It may be made of a GaN-based semiconductor material, and the p-GaN-based semiconductor material may be GaN, AlGaN, InGaN, AlInGaN, or the like. Here, Mg, Zn, Be, or the like may be used as an impurity used for doping the 2-1 th semiconductor layer 133 .

In addition, the second active layer 135 positioned above the 2-1 th semiconductor layer 133 may have a multi-quantum well (MQW) structure having a well layer and a barrier layer having a higher band gap than the well layer. .

The second active layer 135 may emit light when a voltage or current is applied to the 2-1 and 2-2 semiconductor layers 133 and 137 .

The 2-2 semiconductor layer 137 is positioned on the second active layer 135 and serves to provide electrons to the second active layer 135 . The 2-2 semiconductor layer 137 is n-GaN. It may be made of a semiconductor material, and the n-GaN semiconductor material may be GaN, AlGaN, InGaN, AlInGaN, or the like. Here, Si, Ge, Se, Te, or C may be used as the impurity used for doping the 2-2 semiconductor layer 137 .

Here, in the transparent LED display device 100 according to the first embodiment of the present invention, the second LED element 130 positioned to correspond to the second driving region DA2 of the transparent region T is provided in the second driving region ( It is characterized in that it is positioned corresponding to only the light emitting area EA of DA2).

Through this, as shown in FIG. 2 , the second LED element 130 has a hollow rectangular or cylindrical shape corresponding to only the light emitting area EA through the transmission area TA.

Accordingly, nothing is located in the transmission area TA of the second concave portion 113b of the reflective insulating layer 113 .

A common electrode 129 is positioned above the first and second semiconductor layers 127 and 2-2 semiconductor layers 137 and the reflective insulating film 113 of the first and second LED devices 120 and 130 . , the common electrode 129 may be electrically connected to the 1-2 semiconductor layer 127 and the 2-2 semiconductor layer 137 of the first and second LED devices 120 and 130 .

Here, the common electrode 129 may be shared by the first and second LED elements 120 and 130 positioned to correspond to all sub-pixels SP, or may be disposed separately for each sub-pixel SP. have.

The common electrode 129 includes indium tin oxide (ITO), indium zinc oxide (IZO), and indium tin zinc to transmit the light emitted from the first and second active layers 125 and 135 . It may include, but is not limited to, an indium tin zinc oxide (ITZO), zinc oxide (ZnO), and a tin oxide (TO)-based transparent conductive oxide.

The common electrode 129 may be supplied with a common voltage. For example, the common electrode 129 is extended to the non-display area NEA, and a gate driving circuit (not shown) of the non-display area NEA is provided. , a data driving circuit (not shown) and a control circuit (not shown) may be connected to receive a common voltage, and may be supplied from a gate driving circuit (not shown), a data driving circuit (not shown) and a control circuit (not shown). It may be connected to the first and second switching (not shown) receiving voltage and the first and second driving thin film transistors DTr1 and DTr2 to receive a common voltage.

The first p-type electrode 121, the 1-1 and 2-1 semiconductor layers 123 and 127, the first active layer 125, and the common electrode 129 form the first LED device 120, The second p-type electrode 131 , the 2-1 and 2-2 semiconductor layers 133 and 137 , the second active layer 135 , and the common electrode 129 form the second LED device 130 .

An insulating layer for protecting the first and second LED devices 120 and 130 may be positioned above the common electrode 129 , or a light conversion layer may be further positioned. The light conversion layer may convert light emitted from the first and second LED elements 120 and 130 provided for each sub-pixel SP into various colors.

In the transparent LED display device 100 according to the first embodiment of the present invention, the second driving area DA2 of the transmissive area T is further divided into the light emitting area EA and the transparent area TA, so that light is emitted. By further locating the second LED element 130 in the shape of a hollow cylinder or square pillar in response to the area EA, the image implementation mode can be changed according to the surrounding environment without lowering the transmittance of the transparent LED display device 100 . It can be implemented in various ways.

That is, if you want to implement an image realization mode of brightness that is not high in ambient illuminance, an image of relatively low luminance can be implemented, and when you want to implement an image realization mode of high brightness in peripheral illuminance, an image of relatively high luminance is displayed. that can be implemented.

Accordingly, in the case of the image implementation mode having a high brightness in the peripheral illuminance, it is possible to improve the concentration of the viewer.

3A to 3C are schematic diagrams schematically showing a transmission mode and an image realization mode of a transparent LED display device according to a first embodiment of the present invention, and FIGS. 4A to 4B are another transparent LED display according to the first embodiment of the present invention. A schematic cross-sectional view of one subpixel of the device.

5 is a cross-sectional view schematically showing one sub-pixel of another transparent LED display device according to the first embodiment of the present invention.

As shown in FIG. 3A , when the transparent LED display device 100 intends to implement a transmission mode in which no image is displayed, light is transmitted through the transparent region T and is positioned on the opposite side of the transparent LED display device 100 . You can see objects or images clearly.

At this time, when the transparent LED display device 100 wants to implement an image realization mode so that it can display an image, when the ambient illuminance is not very high, as shown in FIG. 3B , the first driving region of the display region B An image is displayed by driving only the first LED element 120 located in (DA1), and at this time, the second LED element 130 located in the second driving area DA2 of the transparent area T is not driven. .

Through this, an image is displayed on the transparent LED display device 100 by the first LED element 120 driven only in the display area B, and light is transmitted through the transparent LED display device 100 in the transparent area T. ), you can see the object or image located on the opposite side of the

In addition, if you want to implement an image implementation mode when the ambient illuminance is high, as shown in FIG. 3c , the first LED element 120 located in the display area B and the transparent area T located in the The second LED element 130 is all driven to display an image.

That is, the transparent LED display device 100 shows an image together with the second LED device 130 positioned in the light emitting area EA of the transparent area T and the first LED device 120 driven in the display area B. By displaying this, the image implemented by the transparent LED display device 100 is implemented more clearly.

If only the first LED element 120 is driven and the displayed image has a first luminance, the image displayed by driving both the first and second LED elements 120 and 130 has a second luminance higher than the first luminance. will have

Accordingly, in the case of the image implementation mode having a high brightness in the peripheral illuminance, it is possible to improve the concentration of the viewer.

At this time, since light is still transmitted through the transmission area TA of the transparent area T, the transparent LED display device 100 can also see an object or image located on the opposite side of the transparent LED display device 100 . .

On the other hand, by setting nothing in the transmission area TA of the transparent area T, the transparency of the transmission area TA can be improved, or as shown in FIGS. 4A to 4B, the transparent area T The transparent resin 140 may be filled in the transmission area TA of the .

The transparent resin 140 may be formed of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide or titanium oxide, for example, the transparent resin 140 is SiO2, It may be formed of Al2O3, SiON, or SiNx.

The transparent resin 140 may be formed to be transparent in order to transmit light.

At this time, the transparent resin 140 is preferably formed to have substantially the same refractive index as that of the second interlayer insulating film 106b. When the refractive indices of the transparent resin 140 and the second interlayer insulating film 106b are not the same , because distortion of light such as total reflection of light may be made at the interface between the second interlayer insulating film 106b and the transparent resin 140 .

Here, the fact that the refractive indices of the two materials are substantially the same or that the refractive indices of the two materials are substantially identical means that the refractive indices of the two materials are not exactly the same as well as the case where the refractive indices of the two materials are not exactly the same, but between two materials Also includes a case in which a distortion phenomenon such as total reflection of light is minimized at the interface of , for example, a case in which a difference in refractive indices of two materials is 0.1 or less.

The transparent resin 140 may further include a plurality of convex patterns 141 , and the convex patterns 141 may realize substantially the same luminance regardless of the incident direction of light, for example, as shown in FIG. 3A . Similarly, the convex pattern 141 may be formed in a hemispherical shape, or may be formed in a prismatic shape as shown in FIG. 3B .

The convex pattern 141 reduces the total reflectance of incident light incident into the transparent resin 140 and emitted to the outside, thereby increasing the light output efficiency of the light emitted from the second LED element 130 to the outside. it will be done

That is, when the convex pattern 141 is not provided in the transparent resin 140, the light emitted from the second LED element 130 is refracted at the interface due to the difference in refractive index between the transparent resin 140 and the air layer. However, since the light path from the transparent resin 140 to the air layer is a light path from the dense medium to the fine medium, when the total reflection is greater than the critical angle, the light is totally reflected and may not be emitted to the outside at all.

On the other hand, when the convex pattern 141 is formed on the transparent resin 140, the interface between the convex pattern 141 and the air layer is formed in a convex shape, so that the incident angle becomes smaller than the critical angle. Accordingly, light may be refracted and emitted to the outside without being totally reflected.

Through this, the light output efficiency of the light emitted from the second LED device 130 to the outside is increased.

In addition, in the transparent LED display device 100 according to the first embodiment of the present invention, as shown in FIG. 5 , the thickness of the second active layer 135 of the second LED device 130 positioned in the transparent region T (d2) can be formed to be thicker than the thickness d1 of the first active layer 125 of the first LED element 120, through which the first active layer 125 of the first LED element 120 and The luminous efficiency of the second active layer 135 of the second LED device 130 may be similar to each other.

That is, as the second LED element 130 is formed in the shape of a hollow square or column corresponding to the light emitting area EA, the second active layer 135 of the second LED element 130 is formed by the first LED element ( The area of the first active layer 125 of 120 is smaller than that of the first active layer 125 .

At this time, as shown in FIG. 5 , the thickness d2 of the second active layer 135 of the second LED element 130 is greater than the thickness d1 of the first active layer 125 of the first LED element 120 . By forming thick, it is possible to compensate for a small area of the second active layer 135 .

Through this, the luminous efficiency of the first active layer 125 of the first LED element 120 and the second active layer 135 of the second LED element 130 can be made to be similar to each other.

As described above, in the transparent LED display device 100 according to the first embodiment of the present invention, the second driving area DA2 of the transparent area T is further divided into an emission area EA and a transparent area TA. Thus, the second LED element 130 of the hollow cylindrical or square column shape is further positioned to correspond to the light emitting area EA, so that the image according to the surrounding environment without lowering the transmittance of the transparent LED display device 100 is It is possible to implement various implementation modes.

Accordingly, objects or images located on the opposite side of the transparent LED display device 100 can be clearly distinguished, and an image implemented from the transparent LED display device 100 can also be implemented more clearly.

Through this, the display quality and reliability of the transparent LED display device 100 are improved.

In addition, the transparent LED display device 100 according to the first embodiment of the present invention can implement high resolution without lowering transmittance. This will be described in more detail with reference to FIGS. 6A to 6E .

6A to 6B are schematic diagrams schematically showing one unit pixel of a general transparent display device, and FIGS. 6C to 6E are schematic diagrams showing one unit pixel of a transparent LED display device according to the first embodiment of the present invention. It is a schematic diagram.

As shown in FIGS. 6A to 6B , one unit pixel P may include at least three sub-pixels SP1 , SP2 , and SP3 adjacent to each other for color display. For example, one unit pixel (P) may include a red sub-pixel SP1, a green sub-pixel SP2, and a blue sub-pixel SP3 adjacent to each other.

In this case, one unit pixel P is defined by dividing each sub-pixel SP1 , SP2 , and SP3 into a display area B and a transparent area T in order to implement a transparent display device.

As shown in FIG. 6A , the transparent display device prevents all the display areas B of each sub-pixel SP1, SP2, and SP3 from being driven, so that when the transparent display device implements a transmissive mode that does not display an image, , so that light is transmitted through the transparent region T, it is possible to clearly see an object or image located on the opposite side of the transparent display device.

And as shown in FIG. 6B, by driving the display area B of each sub-pixel SP1, SP2, SP3, the transparent display device implements an image realization mode in which an image is displayed. At this time, in order to display a color All display areas B of each sub-pixel SP1 , SP2 , and SP3 must be driven.

Light is still transmitted through the transparent region T, so that an object or image located on the opposite side of the transparent display device can be clearly viewed.

Here, referring to FIGS. 6C to 6E , the transparent LED display device 100 according to the first embodiment of the present invention includes only two sub-pixels SP1 and SP2 in which one unit pixel P is adjacently positioned. It can be configured, as shown in FIG. 6c , the display area B of each sub-pixel SP1 and SP2 is not driven, so that the transparent LED display device 100 implements a transmission mode in which no image is displayed. In addition, by allowing light to be transmitted through the transparent region T, an object or image located on the opposite side of the transparent LED display device 100 can be clearly viewed.

And as shown in FIG. 6D, by driving the display area B of each sub-pixel SP1, SP2, the transparent LED display device 100 implements an image realization mode in which an image is displayed. At this time, the sub-pixel ( Red light and green light are emitted from each of the display areas B of SP1 and SP2, and blue light is emitted from one light emitting area EA among the transparent areas T of the subpixels SP1 and SP2. The transparent LED display device 100 according to the first embodiment of the present invention can realize full-color.

In this case, light may still be transmitted in the transmission area TA of the transparent area T.

Through this, the transparent LED display device 100 according to the first embodiment of the present invention can display a color only with two sub-pixels SP1 and SP2 located adjacent to the transparent LED display device 100 . It becomes possible to clearly see the object or image that is located.

Accordingly, the transparent LED display device 100 according to the first embodiment of the present invention can realize high resolution without lowering transmittance.

In addition, as shown in FIG. 6E , all colors may be driven in the transparent region T of each sub-pixel SP1 and SP2. For example, red light with relatively low light efficiency is transmitted to each of the sub-pixels SP1 and SP2. ) in the display area B, and blue light and green light having relatively high light efficiency may be driven in the light emitting area EA of the transparent area T of each of the subpixels SP1 and SP2.

Whether the transparent area T and the display area B of each of the sub-pixels SP1 and SP2 emit light can be freely designed through the surrounding environment.

- Second embodiment -

7 is a cross-sectional view schematically illustrating one sub-pixel of a transparent LED display device according to a second embodiment of the present invention.

On the other hand, in order to avoid overlapping description, the same reference numerals are given to parts having the same role as those of the above-described first embodiment, and only characteristic content to be described in the second embodiment will be described.

As shown, in the display area B and the transparent area T of the sub-pixel SP, first and second driving thin film transistors DTr1 and DTr2 are respectively provided to correspond to the respective switching areas TrA1 and TrA2. The first LED element 210 connected to the first driving thin film transistor DTr1 is positioned in the first driving region DA1 of the display region B, and the second driving region of the transparent region T A second LED element 230 connected to the second driving thin film transistor DTr2 is positioned at DA2.

In this case, the transparent area T is defined by dividing the second driving area DA1 into the light emitting area EA and the transmitting area TA again, and the second LED element 230 is hollow corresponding to the light emitting area EA. It is made in the form of a rectangle or a cylinder.

Here, in the transparent LED display device 200 according to the second embodiment of the present invention, the first LED element 210 positioned in the first driving area DA1 of the display area B and the transparent area T emit light. The second LED device 230 positioned in the area EA may be formed to share the second semiconductor layer 217 with each other.

That is, in the first LED device 210 , a first p-type electrode 211 , a 1-1 semiconductor layer 213 , a first active layer 215 , and a first 1-2 semiconductor layer 217 are sequentially stacked. The second LED device 230 is formed by sequentially stacking a second p-type electrode 231 , a 2-2 semiconductor layer 233 , and a second active layer 235 , in this case, the first LED device Between the 1-1 semiconductor layer 213 and the first active layer 215 of 210 and the 2-1 semiconductor layer 203 and the second active layer 235 of the second LED device 230, a reflective insulating film ( 113) is positioned, and the first and second semiconductor layers 217 positioned on the first active layer 215 of the first LED element 210 are on the second active layer 235 of the second LED element 230. is formed by extending

As the first and second LED devices 210 and 230 are integrally formed by the first and second semiconductor layers 217, the transparent LED display device 200 according to the second embodiment of the present invention is an LED device. The efficiency of the transfer process of (210, 230) is improved.

At this time, the first LED element 210 is electrically connected to the first driving thin film transistor DTr1 located in the display area B, and the second LED element 230 is also located in the transparent area T. As they are electrically connected to the driving thin film transistor DTr2 , the first and second LED elements 210 and 230 can be individually driven from each other.

In this case, the common electrode 129 positioned above the second LED element 230 may be positioned to correspond to the transmissive area TA of the transparent region T, and may correspond to the transmissive area TA as shown. It may be patterned to have an opening to further improve transmittance in the transmission area TA.

- 3rd embodiment -

8A to 8B are cross-sectional views schematically illustrating one sub-pixel of a transparent LED display device according to a third embodiment of the present invention.

On the other hand, in order to avoid overlapping description, the same reference numerals are given to parts having the same role as those of the above-described first and second embodiments, and only characteristic content to be described in the third embodiment will be described.

As shown in FIG. 8A, in the transparent LED display device 300 according to the third embodiment of the present invention, one sub-pixel SP is divided into a display area B and a transparent area T, and the display area ( B) and the first and second driving areas DA1 and DA2 of the transparent area T are again converted into the first and second light emitting areas EA1 and EA2 and the first and second transmission areas TA1 and TA2, respectively. can be defined separately.

Here, the first light emitting area EA1 is positioned along the edge of the first transmissive area TA1 , and the second light emitting area EA2 is positioned along the edge of the second transmissive area TA2 .

A first switching area TrA1 in which the first driving thin film transistor DTr1 is located is defined in the non-emission area NEA positioned at one side of the first light emitting area EA1 of the display area B, and a transparent area A second switching area TrA2 in which the second driving thin film transistor DTr2 is positioned is defined on one side of the second light emitting area EA2 in (T).

Accordingly, the transparent LED display device 300 according to the third embodiment of the present invention includes the first driving thin film transistor DTr1 positioned in the first switching area TrA1 in the first light emitting area EA1 of the display area B, and The first LED element 310 connected through the first connection electrode 111 is located, and the second driving area is located in the second switching area TrA2 in the second light emitting area EA2 of the transparent area T. The thin film transistor DTr2 and the second LED element 330 connected through the second connection electrode 112 are positioned, and the first and second LED elements 310 and 330 have first and second transmission regions ( TA1 and TA2 are penetrated to form a hollow rectangular or cylindrical shape corresponding only to the first and second light emitting areas EA1 and EA2.

That is, the first LED device 310 includes a first p-type electrode 311 , a 1-1 semiconductor layer 313 sequentially positioned above the first p-type electrode 311 , and a first active layer 315 . , a first 1-2 semiconductor layer 317 , and the second LED element 330 is a second p-type electrode 331 and a 2-1-th sequentially positioned above the second p-type electrode 331 . It includes a semiconductor layer 333, a second active layer 335, and a 2-2 semiconductor layer 337, wherein the first and second LED devices 310 and 330 are first and second transmission regions TA1, respectively. , TA2) penetrates to form a hollow rectangular or cylindrical shape positioned corresponding to only the first and second light emitting areas EA1 and EA2.

The transparent LED display device 300 according to the third embodiment of the present invention includes the first transparent area TA1 in the display area B, so that the image is displayed in both the display area B and the transparent area T. It is possible to further improve the transmittance of the transparent LED display device 300 while being able to implement it.

Here, as shown in FIG. 8B , the transparent LED display device 300 according to the third embodiment of the present invention can be positioned by filling the light conversion layer 340 into the first transmission area TA1 of the display area B. have.

That is, the first LED element 310 of the display area B emits blue light from the active layer 315, and thus the first LED element 310 in the red and green sub-pixels (SP1 and SP2 in FIG. 6D). The light conversion (color conversion) layer 340 that converts the light of the short wavelength to the light of the long wavelength is positioned there.

This means that blue light has a shorter wavelength compared to red light and green light, and the fluorescence efficiency of the light conversion layer 340 is slightly better for light of a shorter wavelength, and the light conversion layer 340 converts colors into red light and green light having relatively long wavelengths due to their characteristics. This is because it is slightly better in terms of lifespan compared to color conversion of blue light having a relatively short wavelength.

The light conversion layer 340 includes a color conversion material, and the color conversion material may be, for example, quantum dots, fluorescent dyes, or a combination thereof. Fluorescent dyes include, for example, organic fluorescent substances, inorganic fluorescent substances, and combinations thereof.

The quantum dot may be selected from, but not limited to, a group II-VI compound, a group III-V compound, a group IV-VI compound, a group IV element, a group IV compound, and combinations thereof.

Group II-VI compound is a binary compound selected from the group consisting of CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and mixtures thereof; CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgZnTe, HgZnS, HgZnSe, HgZnTe, MgZnS, MgZnTe, MgZnS and mixtures thereof It may be selected from the group consisting of small compounds and quaternary compounds selected from the group consisting of HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, and mixtures thereof.

The group III-V compound is a binary compound selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and mixtures thereof; A ternary compound selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, and mixtures thereof and GaAlNAs, GaAlNSb, GaAlPAs , GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, and mixtures thereof.

The group IV-VI compound is a binary compound selected from the group consisting of SnS, SnSe, SnTe, PbS, PbSe, PbTe, and mixtures thereof; a ternary compound selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, and mixtures thereof; and a quaternary compound selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe, and mixtures thereof. It can be selected from the group consisting of.

The group IV element may be selected from the group consisting of Si, Ge, and mixtures thereof.

The group IV compound may be a di-element compound selected from the group consisting of SiC, SiGe, and mixtures thereof.

In this case, the binary compound, the ternary compound, or the quaternary compound may be present in the particle at a uniform concentration, or may be present in the same particle due to partial concentration distribution. Also, one quantum dot may have a core/shell structure surrounding another quantum dot.

The interface between the core and the shell may have a concentration gradient in which the concentration of the element present in the shell decreases toward the center.

These quantum dots may have a full width of half maximum (FWHM) of the emission wavelength spectrum of about 45 nm or less, preferably about 40 nm or less, more preferably about 30 nm or less, and color purity or color reproducibility is improved in this range. can do it

In addition, the shape of the quantum dot is not particularly limited to that of a generally used type, but more specifically, spherical, pyramidal, multi-arm, or cubic nanoparticles, nanotubes, nanowires, Nanofibers, nanoplatelets, etc. can be used.

The fluorescent dye may be, for example, a red fluorescent dye, a green fluorescent dye, a dye emitting light of a third color other than that, or a combination thereof.

A red fluorescent dye is a material that absorbs light in a blue wavelength band and emits light in a red wavelength band, for example, (Ca, Sr, Ba)S, (Ca, Sr, Ba)2Si5N8, Cazen (CaAlSiN3), CaMoO4, Eu2Si5N8. , K2SiF6, SrCaAlSiN3, CaS, may be at least one of SrLiAlN3. In addition, the red fluorescent dye may be, for example, a material having a maximum emission peak at 617 nm to 637 nm and a full width at half maximum (FWHM) of 10 nm to 100 nm.

Green fluorescent dye is a material that absorbs light in the blue wavelength band and emits light in the green wavelength band. For example, yttrium aluminum garnet (YAG), (Ca, Sr, Ba)2SiO4, SrGa2S4, barium magnesium aluminum Nate (BAM), alphasialon (α-SiAlON), beta sialon (β-SiAlON), Ca3Sc2Si3O12, Tb3Al5O12, BaSiO4, CaAlSiON, Sr1-xBax)Si2O2N2, LuAG, (Ca, Sr, Ba)Si2O2N2, in GaS There may be at least one.

In addition, the green fluorescent dye may be, for example, a material having a maximum emission peak at 510 nm to 525 nm and having a full width at half maximum (FWHM) of 60 nm to 70 nm. In a specific embodiment, the green fluorescent dye includes a first green fluorescent dye having a maximum emission peak at 520 nm and a full width at half maximum (FWHM) of 62 nm, and a second green color having a maximum emission peak at 511 nm and a full width at half maximum (FWHM) of 64 nm. Fluorescent dyes may be used. However, the green fluorescent dye is not limited to the above-described examples.

Meanwhile, the fluorescent dyes listed so far may be inorganic fluorescent materials, and organic fluorescent materials may consist of BODIPY-based fluorescent materials.

In addition, Perovskite material is also applicable.

Here, the light conversion layer 340 may be implemented in a manner such as inkjet printing or dotting corresponding to the first transmission area TA1.

9 is a cross-sectional view schematically showing one sub-pixel of another transparent LED display device according to the third embodiment of the present invention.

As shown, in another transparent LED display device 300 according to the third embodiment of the present invention, one sub-pixel SP is divided into a display area B and a transparent area T, and the display area B ) of the first driving area DA1 is divided into first and second light emitting areas EA1 and EA2 and a first transmission area TA1 again, and the second driving area DA2 of the transparent area T is also The third light emitting area EA3 and the second transmission area TA2 are again divided and defined.

Here, the second light emitting area EA2 is positioned along the edge of the first transmissive area TA1 , and the third light emitting area EA3 is positioned along the edge of the second transmissive area TA2 .

A first switching area TrA1 in which the first driving thin film transistor DTr1 is located is defined in the non-emission area NEA positioned at one side of the first light emitting area EA1 of the display area B, and the second A second switching area TrA2 in which the second driving thin film transistor DTr2 located at one side of the emission area EA2 is located is defined.

In addition, a third switching area TrA3 in which the third driving thin film transistor DTr3 is located is defined on one side of the third light emitting area EA3 of the transparent area T.

Accordingly, in another transparent LED display device 300 according to the third embodiment of the present invention, the first driving thin film transistor DTr1 is located in the first switching area TrA1 in the first light emitting area EA1 of the display area B. ) and the first LED element 310 connected through the first connection electrode 111 is positioned, and the second driving thin film transistor DTr2 positioned in the second switching region TrA2 in the second light emitting region EA2. ) and the second LED element 350 connected through the second connection electrode 114 is positioned.

In addition, in the third light emitting area EA3 of the transparent area T, the third LED element is connected to the third driving thin film transistor DTr3 located in the third switching area TrA3 and the third connection electrode 112 . 330 is located, and the second and third LED elements 350 and 330 penetrate only the second and third light emitting regions EA2 and EA3 through the first and second transmission regions TA1 and TA2. to form a hollow rectangular or cylindrical shape.

That is, the second LED device 350 includes a second p-type electrode 351 , a 2-1 th semiconductor layer 353 , and a second active layer 355 sequentially positioned over the second p-type electrode 351 . , a 2-2 second semiconductor layer 357 , and the third LED device 330 is a 3-1 th 3 - 1 th sequentially positioned above the third p-type electrode 331 and the third p-type electrode 331 . It includes a semiconductor layer 333, a third active layer 335, and a 3-2 semiconductor layer 337, wherein the second and third LED devices 350 and 330 are the first and second transmission regions TA1, respectively. , TA2) penetrates to form a hollow rectangular or cylindrical shape positioned corresponding to only the second and third light emitting areas EA2 and EA3.

In addition, another transparent LED display device 300 according to the third embodiment of the present invention includes the first LED element 310 and the second light emitting area EA2 positioned in the first light emitting area EA1 of the display area B. The second LED device 350 positioned in . The second LED device 350 may be formed to share the first and second semiconductor layers 327 with each other.

That is, in the first LED device 310 , a first p-type electrode 311 , a 1-1 semiconductor layer 313 , a first active layer 315 , and a first 1-2 semiconductor layer 317 are sequentially stacked. In this case, the 1-1 semiconductor layer 313 and the first active layer 315 of the first LED device 310, and the 2-1 semiconductor layer 353 and the second semiconductor layer 353 of the second LED device 350 are formed. The reflective insulating film 113 is positioned between the active layers 355 , and the first and second semiconductor layers 317 positioned above the first active layer 315 of the first LED element 310 are formed by the second LED element 350 . ) to extend over the second active layer 355 .

As the first and second LED devices 310 and 350 are integrally formed by the first and second semiconductor layers 317, another transparent LED display device 300 according to the third embodiment of the present invention provides the first And the efficiency of the transfer process of the second LED element (310, 350) is improved.

In particular, another transparent LED display device 300 according to the third embodiment of the present invention can further improve the transmittance of the transparent LED display device 300 and also implement various image implementation modes according to the surrounding environment.

10A to 10C are schematic diagrams schematically illustrating a transmission mode and an image realization mode of another transparent LED display device according to a third embodiment of the present invention.

As shown in FIG. 10A, when the transparent LED display device 300 intends to implement a transmissive mode that does not display an image, another transparent LED display device 300 according to the third embodiment of the present invention has a display area (B) The light is transmitted through the first transmission area TA1 of the transparent area T and the second transmission area TA2 of the transparent area T, so that the object or image located on the opposite side of the transparent LED display device 300 can be clearly seen. there will be

In this transmission mode, light is transmitted through the first transmission area TA1 even in the display area B, so that the transmittance is further improved.

At this time, when the transparent LED display device 300 wants to implement an image realization mode so as to display an image, when the ambient illuminance is not very high, the first and second portions of the display area B are shown in FIG. 10B . An image is displayed by driving both the first and second LED elements 310 and 350 positioned in the second light emitting areas EA1 and EA2.

At this time, the third LED element 330 positioned in the third light emitting area EA3 of the transparent area B is not driven.

Through this, an image is displayed on the transparent LED display device 300 by the first and second LED elements 310 and 350 driven only in the display area B, and the first transparent area TA1 of the display area B ) and the second transmission area TA2 of the transparent area T, the light is transmitted so that an object or image located on the opposite side of the transparent LED display device 300 can also be viewed.

In addition, in the case of implementing the image implementation mode when the ambient illumination is high, the first and second LED elements 310 and 350 positioned in the display area B and the transparent area ( All of the third LED elements 330 positioned at T) are driven to display an image.

That is, the transparent LED display device 300 includes the first and second LED elements (B) in which the third LED element 330 positioned in the third light emitting area EA3 of the transparent area T is driven in the display area B. By allowing the image to be displayed together with the 310 and 350 , the image implemented by the transparent LED display device 300 is more clearly implemented.

If only the first LED element 310 is driven and the displayed image has a first luminance and the transparent LED display device 300 has a first transmittance, the first and second LED elements 310 and 350 are driven The displayed image has a second luminance higher than the first luminance, and the transparent LED display device 300 has a second transmittance lower than the first transmittance.

In addition, the first to third LED elements 310, 350, and 330 are all driven and the displayed image has a third luminance higher than the second luminance, and in this case, the transparent LED display device 300 has more than the second transmittance. It will have a low third transmittance.

Whether to run (on) luminance transmittance first LED element ha Prize first LED element + second LED element medium medium 1st LED element + 2nd LED element + 3rd LED element Prize ha

That is, in another transparent LED display device 300 according to the third embodiment of the present invention, the transmittance of the transparent LED display device 300 can be further improved by providing the first transmission area TA1 even in the display area B. In addition, the display area B is divided into the first and second light-emitting areas EA1 and EA2, and the third light-emitting area EA3 is also located in the transparent area T. It is possible to implement the luminance of the transparent LED display device 300 in various ways. Accordingly, in the case of the image implementation mode of high brightness in the peripheral illumination, the concentration of the viewer can also be improved.

- 4th embodiment -

11A to 11B are cross-sectional views schematically illustrating one sub-pixel of a transparent LED display device according to a fourth embodiment of the present invention.

Meanwhile, in order to avoid overlapping descriptions, the same reference numerals are given to parts having the same role as those of the above-described first to third embodiments, and only characteristic content to be described in the fourth embodiment will be described.

As shown, in the transparent LED display device 400 of the fourth embodiment of the present invention, one sub-pixel SP is divided into a display area B and a transparent area T, and the display area B and The transparent region T includes first and second driving regions DA1 and DA2 corresponding to the first and second LED elements 410 and 430, respectively, and the first and second driving regions DA1 and DA2. ) along the edge of the non-emission area NEA.

A non-emission area NEA is formed along edges of the first and second driving areas DA1 and DA2.

In particular, in the transparent LED display device 400 according to the fourth embodiment of the present invention, the second driving area DA2 of the transparent area T again includes the first and second light emitting areas EA1 and EA2 and the transparent area ( TA) can be divided and defined.

A transmission area TA is defined corresponding to a central portion of the second driving area DA2 , and the first and second emission areas EA1 and EA2 are defined along edges of the transmission area TA.

In this case, the second light emitting area EA2 is defined by being stacked with the first light emitting area EA1 .

Looking at this in more detail, in the non-emission area NEA located at one side of the first driving area DA1 of the display area B, the first switching area TrA1 in which the first driving thin film transistor DTr1 is located is formed. A second switching area TrA2 in which the second driving thin film transistor DTr2 is located is defined in the non-emission area NEA located at one side of the second driving area DA2 of the transparent area T.

In addition, in the non-emission area NEA located on the other side of the second driving area DA2 of the transparent area T, a third switching area TrA3 in which the third driving thin film transistor DTr3 is located is defined.

The first driving thin film transistor DTr1 drives the first LED element 410 positioned to correspond to the display region B, and the second driving thin film transistor DTr2 is positioned to correspond to the transparent region T. The second LED element 430 is driven. And the third driving thin film transistor DTr3 drives the third LED element 450 positioned to correspond to the transparent region T.

To this end, in the second interlayer insulating film 106b positioned to cover the first and second driving thin film transistors DTr1 and DTr2, a first for exposing the first drain electrode 109b of the first driving thin film transistor DTr1 A drain contact hole PH1 is provided, and a second drain contact hole PH2 for exposing the third drain electrode 109f of the third driving thin film transistor DTr3 is provided.

Accordingly, the first driving thin film is on the second interlayer insulating film 106b and into the first concave portion 113a of the reflective insulating film 113 corresponding to the first driving region DA1 through the first drain contact hole PH1. The first connection electrode 111 connected to the transistor DTr1, the first p-type electrode 411 sequentially positioned above the first connection electrode 111, the 1-1 semiconductor layer 413, the first The first LED device 410 including the active layer 415 and the first and second semiconductor layers 417 is positioned.

The second interlayer insulating film 106b further includes a third concave portion 113c in which the second LED element 430 is positioned while exposing the second drain electrode 109d of the second driving thin film transistor DTr2. will become

A second connection electrode 112 in contact with the second drain electrode 109d of the second driving thin film transistor DTr2 is provided in the third concave portion 113c, and the second connection electrode 112 is the second driving electrode 112 . It is positioned to correspond to the first emission area EA of the area EA2.

The second p-type electrode 431 on the second connection electrode 112, the 2-1 th semiconductor layer 433 and the second active layer 435 sequentially positioned on the second p-type electrode 431 ), the second LED device 430 including the 2-2 semiconductor layer 437 is positioned.

The second LED element 430 has a hollow rectangular or cylindrical shape corresponding only to the first light emitting area EA1 through the transmission area TA.

The third LED element 450 is positioned inside the second concave portion 113b of the reflective insulating film 113 above the second LED element 430 , and the third LED element 450 has a second driving region. It is positioned to correspond to the second emission area EA2 defined along the edge of DA2.

That is, the third connecting electrode 114 is connected to the third driving thin film transistor DTr3 through the second drain contact hole PH2 on the second interlayer insulating film 106b, and the third connecting electrode 114 is the upper part. A third LED device 450 including a third p-type electrode 451 , a 3-1 semiconductor layer 453 , a third active layer 455 , and a 3-2 semiconductor layer 457 sequentially positioned as will be located

The third LED element 450 also has a hollow rectangular or cylindrical shape corresponding to only the second light emitting area EA2 through the transmission area TA.

A common electrode 129 is positioned above the first and second semiconductor layers 417 and 3-2 semiconductor layers 457 and the reflective insulating film 113 of the first and third LED devices 410 and 450 . , although not shown, a common electrode (not shown) is also positioned above the second LED element 430 .

Accordingly, the common electrode 129 includes the 1-2 semiconductor layer 417 and the 2-2 semiconductor layer 437 and the 3-2 semiconductor layer ( 457) may be electrically connected to.

At this time, the common electrode 129 is positioned above the first and second semiconductor layers 417 of the first LED element 410 only in the display area B, and in the transparent area T, the second and second 3 It may be formed to be positioned between the LED elements 430 and 450 . Therefore, the common electrode 129 may be electrically connected to the 2-2 semiconductor layer 437 of the second LED device 430 and the 3-1 semiconductor layer 453 of the third LED device 450, at this time. The third connection electrode 114 may be positioned on the reflective insulating layer 113 to be electrically connected to the 3-2 semiconductor layer 457 of the third LED element 450 .

The transparent LED display device 400 according to the fourth embodiment of the present invention can allow light of different colors to be emitted from the transparent region T.

That is, for example, when the transparent LED display device 400 is in the image realization mode for realizing an image, red light is emitted from the display area B, and only blue light is emitted from the transparent area T, or only green light is emitted. This can be made to emit light, or blue light and green light are simultaneously emitted from the transparent region T, so that the transparent LED display device 400 according to the fourth embodiment of the present invention can realize full-color.

The transparent LED display device 400 according to the fourth embodiment of the present invention can realize an image even in the transparent region T, and in particular, it can emit light of two different colors from the transparent region T. Therefore, it is possible to implement a higher resolution without lowering the transmittance.

As described above, in the transparent LED display device 400 according to the fourth embodiment of the present invention, the first and second light emitting areas EA1 and EA2 are defined to overlap each other of the transparent area T, and the first and second light emitting areas EA1 and EA2 are defined. By placing the second and third LED elements 430 and 450 stacked on top of each other in the hollow rectangular or cylindrical shape corresponding to the second light emitting areas EA1 and EA2, the full- color can be realized.

Accordingly, the transparent LED display device 400 according to the fourth embodiment of the present invention can realize high resolution without lowering transmittance.

The transparent LED display device 400 according to the fourth embodiment of the present invention can clearly distinguish objects or images located on the opposite side, and the image implemented from the transparent LED display device 400 can also be implemented more clearly. do.

Through this, the display quality and reliability of the transparent LED display device 400 are improved.

The present invention is not limited to the above embodiments, and various modifications can be made without departing from the spirit of the present invention.

100: transparent LED display device
101: substrate
103a, 103b: first and second semiconductor layers 102a, 102b: first and second active regions; 102c, 102d, 102e, 102f: first and second source and drain regions)
105: gate insulating film, 106a, 106b: first and second interlayer insulating film
107a, 107b, 107c, 107d: first to fourth semiconductor contact holes
109a, 109b, 109c, 109d: first and second source and drain electrodes
111, 112: first and second connection electrodes
113: reflective insulating films 113a and 113b: first and second concave portions)
120: first LED element (121: first p-type electrode, 123: 1-1 semiconductor layer, 125: first active layer, 127: 1-2 semiconductor layer)
130: second LED device (131: second p-type electrode, 133: 2-1 semiconductor layer, 135: second active layer, 137: 2-2 semiconductor layer)
129: common electrode
PH1, PH2: first and second drain contact holes
SP: subpixel
DA1, DA2: first and second driving regions, NEA: non-emission region
TrA1, TrA2: first and second switching regions
DTr1, DTr2: first and second driving thin film transistors
EA: Emission area, TA: Transmission area
B : display area, T : transparent area

Claims (20)

A substrate comprising: a substrate in which a display area provided with a first driving thin film transistor and a transparent area provided with a second driving thin film transistor are defined;
a first LED element positioned to correspond to the display area and connected to the first driving thin film transistor;
A second LED element positioned to correspond to the transparent region and connected to the second driving thin film transistor
including, wherein the transparent region is defined as a first transmissive region and a first light emitting region surrounding an edge of the first transmissive region,
The second LED element is a transparent LED display device having a hollow shape which penetrates corresponding to the first transmission region and is positioned to correspond to the first emission region.
The display area is defined as a driving area and a non-emission area surrounding an edge of the driving area,
The first LED element is a transparent LED display positioned to correspond to the driving region.
The method of claim 1,
The first LED device includes a first p-type electrode and a 1-1 semiconductor layer, a first active layer, and a 1-2 semiconductor layer sequentially over the first p-type electrode,
The second LED device includes a second p-type electrode and a 2-1 semiconductor layer and a second active layer sequentially over the second p-type electrode,
A transparent LED display device in which the first and second semiconductor layers extend over the second active layer.
4. The method of claim 3,
The second active layer is thicker than the first active layer in a transparent LED display device
The method of claim 1,
The display area is defined as a driving area and a non-emission area surrounding an edge of the driving area,
The driving region is defined as a second transmissive region and a second light emitting region surrounding an edge of the second transmissive region,
The first LED element is a transparent LED display device having a hollow shape that penetrates corresponding to the second transmission region and is positioned to correspond to the second emission region.
6. The method of claim 5,
The first LED device includes a first p-type electrode and a 1-1 semiconductor layer, a first active layer, and a 1-2 semiconductor layer sequentially over the first p-type electrode,
The second LED device includes a second p-type electrode and a 2-1 semiconductor layer and a second active layer sequentially over the second p-type electrode,
A transparent LED display device in which the first and second semiconductor layers extend over the second active layer.
The method of claim 1,
The second LED element is a transparent LED display device in which a transparent resin is positioned inside the hollow to correspond to the first transmission region.
8. The method of claim 7,
The transparent resin is a transparent LED display including a plurality of convex patterns.
9. The method of claim 8,
The convex pattern is at least one of a hemispherical shape or a prismatic shape.
The method of claim 1,
The display area is defined as a driving area and a non-emission area surrounding an edge of the driving area,
The driving region further includes a third light emitting region, a third transmissive region, and a fourth light emitting region surrounding an edge of the third transmissive region,
The first LED element is positioned to correspond to the third light emitting region,
The transparent LED display device further comprising a hollow third LED element penetrating corresponding to the third transmissive region and positioned corresponding to the fourth light emitting region.
11. The method of claim 10,
The first LED device includes a first p-type electrode and a 1-1 semiconductor layer, a first active layer, and a 1-2 semiconductor layer sequentially over the first p-type electrode,
The third LED device includes a third p-type electrode and a 3-1 semiconductor layer and a third active layer sequentially over the third p-type electrode,
The transparent LED display device in which the first and second semiconductor layers extend over the third active layer.
The method of claim 1,
The transparent region further includes a third driving thin film transistor,
A transparent LED display device further comprising a third LED element connected to the third driving thin film transistor under the second LED element.
13. The method of claim 12,
The second LED element and the third LED element are a transparent LED display for emitting different light.
13. The method of claim 12,
An interlayer insulating film is positioned above the first and second driving thin film transistors,
The third LED element is a transparent LED display positioned inside the recess provided in the interlayer insulating film.
13. The method of claim 12,
The first LED device includes a first p-type electrode and a 1-1 semiconductor layer, a first active layer, and a 1-2 semiconductor layer sequentially over the first p-type electrode,
The second LED device includes a second p-type electrode and a 2-1 semiconductor layer and a second active layer sequentially over the second p-type electrode,
A transparent LED display device in which the first and second semiconductor layers extend over the second active layer.
6. The method of claim 5,
The first LED element is a transparent LED display device in which a light conversion layer is positioned inside the hollow to correspond to the second transmission region.
17. The method of claim 16,
The first LED element emits light of a first color,
The light conversion layer is a transparent LED display for converting the light of the first color into a second color.
The method of claim 1,
A transparent LED display device in which a common electrode is positioned above the first and second LED elements.
19. The method of claim 18,
The common electrode is a transparent LED display having an opening corresponding to the first transmission region.
The method of claim 1,
A transparent LED display device in which a reflective insulating film is positioned between the first and second LED elements.

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