KR20210012181A - Light emitting diode(LED) display device - Google Patents

Abstract

The present invention relates to a micro-LED display device that has high color reproducibility as a result of color mixing prevention. In the device, a color blocking filter is positioned around the edge of each sub-pixel. As a result, color mixing of the red, green, and blue light from the micro-LED at an adjacent sub-pixel can be prevented from each sub-pixel, clearer red, green, and blue light can be realized, and high color reproduction of higher quality can be realized.

Description

LED display device {Light emitting diode (LED) display device}

The present application relates to an LED display device, and more particularly, to an LED display device having a high color gamut by preventing color mixing.

Recently, as display devices become larger, the demand for flat display devices that occupy less space is increasing, and organic electric fields including liquid crystal display (LCD) devices or organic light emitting diodes (OLEDs) [0002] The technology of flat panel display devices is developing at a rapid pace as an organic electroluminescent display (OLED) device.

Here, in the liquid crystal display device, the backlight unit is disposed under the liquid crystal panel with polarizing plates attached to the rear and front surfaces, and thus, only 5% or less of the light from the light source provided in the backlight unit passes through the liquid crystal panel, resulting in a disadvantage in light efficiency. Has.

Further, in the case of an organic light emitting display device, although it has improved light efficiency compared to a liquid crystal display device, it still has a limitation in light efficiency and still has a disadvantage in terms of durability and/or lifespan of the display device.

Accordingly, in recent years, in order to overcome the above problems of a liquid crystal display device and/or an organic light emitting display device, a micro-light emitting diode (LED) display device has been proposed.

A micro-LED display device is a display device that implements an image by arranging micro LEDs (μLEDs) having a size of 100 micrometers or less in each subpixel, and has great advantages in terms of low power consumption and miniaturization.

Meanwhile, in the micro-LED display device, a plurality of micro-LEDs are implemented in the form of chips on a substrate. Recently, the number of chips is increased in each of a plurality of unit pixels provided in the display area. Also, research to implement a large screen and high resolution is actively being conducted.

However, when an attempt is made to increase the number of chips within a limited unit pixel area, color mixing occurs between chips that emit light of different colors, which causes a problem of reducing the color reproducibility.

The present invention is to solve the above problems, and it is a first object to prevent color mixing in a micro-LED display device having a large screen and high resolution.

Through this, the second object is to improve the color gamut of the micro-LED display device.

In order to achieve the object as described above, the present invention expresses a first subpixel expressing a first color and a second color having a wavelength band greater than that of the first color, and is disposed adjacent to the first subpixel. A substrate on which a second subpixel is defined, a light emitting diode positioned in the light emitting region of the first and second subpixels, respectively, and emitting the first color, and positioned corresponding to the light emitting region of the second subpixel And, a first color conversion pattern for converting the wavelength of the first color to the second color, and a color cut filter positioned around an edge of the first color conversion pattern and an edge of the emission region of the first subpixel. It provides an LED display device including.

Herein, a third color having a wavelength band greater than that of the second color is expressed, and includes a third subpixel disposed adjacent to the second subpixel, and is positioned corresponding to the third subpixel, and the first And a second color conversion pattern for converting a color into the third color, wherein the color cut filter is located around an edge of the second color conversion pattern, and a black matrix is located below the color cut filter.

In addition, the color blocking filter is located in a transparent resin with light scattering particles dispersed therein, the first color is blue light, and the color blocking filter surrounding the edge of the emission region of the first subpixel has a wavelength of 600 to 800 nm. A first cut-off filter having a high transmittance in a band and a low transmittance in a wavelength band of 600 nm or less is formed, and light scattering particles are dispersed in the color cut-off filter.

In addition, the first to third subpixels each have a rhombus shape, and the lower right side of each of the first to third subpixels positioned above is the upper left side of each of the first to third subpixels positioned below and The second subpixels are arranged to face each other in parallel, and the second subpixels are arranged at predetermined intervals along the first and third pixel rows, and the second subpixels are arranged along a second pixel row between the first and third pixel rows. The first subpixel and the third subpixel are arranged to be spaced apart from each other at a predetermined interval, and the first cut-off filter is positioned between the first subpixel and the second subpixel adjacent to the first subpixel.

In addition, the first cut-off filter is formed by connecting the sides of the second sub-pixel facing the first sub-pixel, the second color is green light, the third color is red light, and the second and second 3 The color cut-off filter surrounding the edge of the second color conversion pattern of each subpixel has a high transmittance in a wavelength band of 400 nm to 500 nm, and a second blocking filter having a low transmittance in a wavelength band of 500 nm to 780 nm. It consists of a filter.

Here, light-scattering particles are dispersed in the color cut-off filter, and the first to third subpixels each have a rhombus shape to form a diamond pentile subpixel structure arranged in a diamond shape, and the first and third images The second subpixels are arranged at predetermined intervals along the line, and along the second pixel row between the first and third pixel rows, the first subpixel and the third subpixel are spaced apart at a predetermined interval at an intersection. And the second cut-off filter is positioned between the third subpixel and the second subpixel adjacent to the third subpixel.

In addition, the second cut-off filter is formed by connecting the sides of the second sub-pixel facing the first sub-pixel, and corresponding to the emission region of the first sub-pixel, a wavelength band of 400 nm to 500 nm A color cut-off filter having a high transmittance and a low transmittance in a wavelength band of 500 nm to 780 nm is further positioned.

In addition, the first color conversion pattern includes quantum dots for converting the first color to the second color, and the second color conversion pattern includes quantum dots for converting the first color to the third color, The light emitting diode includes a common electrode, a first semiconductor layer disposed under the common electrode, an active layer disposed under the first semiconductor layer in the emission region, and emitting the first color, and a second semiconductor layer disposed under the active layer. A semiconductor layer and a p-type electrode positioned below the second semiconductor layer, and the p-type electrode is connected to a driving thin film transistor positioned on the substrate.

As described above, by placing a color-cutting filter around the edge of each subpixel of the micro-LED display device according to the present invention, red light, green light, and blue light emitted from the micro-LED from each subpixel are There is an effect that can prevent the occurrence of color mixing.

Through this, it is possible to implement more vivid red light and green light, there is an effect that can implement high-quality high-color reproduction.

1 is a schematic plan view of a micro-LED display device according to an embodiment of the present invention.
2 is a plan view schematically showing a micro-LED display device according to a first embodiment of the present invention.
FIG. 3 is a cross-sectional view illustrating three subpixels of the micro-LED display device according to the first embodiment of the present invention taken along line III-III' of FIG. 2.
4 is a schematic plan view of a micro-LED display device according to a second embodiment of the present invention.
5 is a cross-sectional view illustrating three subpixels of a micro-LED display device according to a second exemplary embodiment of the present invention taken along line V-V' of FIG. 4.
6 is a cross-sectional view illustrating three subpixels of a micro-LED display device according to a second embodiment of the present invention taken along line VI-VI' of FIG. 4.
7A is a graph showing transmittance of a first cut-off filter according to wavelength.
7B is a graph showing transmittance of a second cut-off filter according to wavelength.
8 is a cross-sectional view showing three subpixels of a micro-LED display device according to still another configuration of a second embodiment of the present invention.
9 is a cross-sectional view showing three subpixels of a micro-LED display device according to still another configuration of a second embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

1 is a schematic plan view of a micro-LED display device according to an embodiment of the present invention.

As shown, the micro-LED display device 100 according to the embodiment of the present invention includes a pixel array 110 disposed on a substrate 101 and a gate driving circuit 120 for driving the pixel array 110. ), a data driving circuit 130, a control circuit 140, and the like.

A plurality of gate lines and a plurality of data lines are disposed in the pixel array 110, and may include a plurality of subpixels SP disposed in a region where the gate lines and the data lines intersect.

In addition, a driving voltage line, a common voltage line, etc. to which a voltage or signal for driving the subpixel SP is applied may be disposed.

Each subpixel SP may include a micro-LED 120 (see FIG. 3) for displaying an image and one or more driving transistors for driving the micro-LED 120 (see FIG. 3 ). We will look at this in more detail later.

The gate driving circuit 120 is controlled by the control circuit 140 and sequentially outputs scan signals to a plurality of gate lines arranged in the pixel array 110 to control driving timings of the plurality of subpixels SP. .

The gate driving circuit 120 may include one or more gate driver integrated circuits (GDIC), and may be located only on one side of the pixel array 110 or on both sides according to a driving method. May be.

Alternatively, the gate driving circuit 120 may be located on the rear surface of the pixel array 110 or the substrate 101.

The data driving circuit 130 receives image data from the control circuit 140 and converts the image data into an analog data voltage. In addition, the data voltage is output to each data line according to a timing when a scan signal is applied through the gate line, so that each subpixel SP expresses brightness according to the image data.

The data driving circuit 130 may include one or more source driver integrated circuits (SDIC).

Further, the control circuit 140 supplies various control signals to the gate driving circuit 120 and the data driving circuit 130, and controls the operation of the gate driving circuit 120 and the data driving circuit 130.

The control circuit 140 may be a timing controller or a controller including the same.

Accordingly, the control circuit 140 allows the gate driving circuit 120 to output a scan signal according to the timing implemented in each frame, and the image data received from the outside is converted to the data signal format used by the data driving circuit 130. The converted image data is converted accordingly and output to the data driving circuit 130.

The control circuit 140 may generate various control signals using various timing signals received from the outside and output them to the gate driving circuit 120 and the data driving circuit 130.

The micro-LED display device 100 supplies various voltages or currents to the pixel array 110, the gate driving circuit 120, the data driving circuit 130, etc., or controls various voltages or currents to be supplied. It may further include a circuit.

Meanwhile, the subpixel SP of the micro-LED display device 100 may be implemented by transferring the micro-LED 120 (see FIG. 3) grown on the wafer substrate 101 to a driving substrate.

Alternatively, the micro-LED display device 100 may be implemented without a transfer process by growing the micro-LED 120 (see FIG. 3) and the driving transistor DTr (see FIG. 3) together on the wafer substrate. That is, the micro-LED 120 (see FIG. 3) and the driving transistor (DTr, see FIG. 3) grown on the wafer substrate form one light-emitting device, and one light-emitting device forms one sub-pixel SP. You may.

Since the micro-LED display device 100 can implement more elaborate and fine-sized pixels, it is possible to implement an ultra-high definition display device applicable to VR or AR.

Here, the micro-LED display device 100 according to an embodiment of the present invention emits blue light from the micro-LEDs 120 (refer to FIG. 3) positioned at each subpixel SP, and thus emits blue light. The color conversion patterns 135 and 137 (see FIG. 3) may be further positioned above the micro-LED 120 (refer to FIG. 3), so that red light, green light, and blue light may be implemented from each sub-pixel SP. .

In particular, the micro-LED display device 100 according to an exemplary embodiment of the present invention further includes a color cut filter 210 (see FIG. 2) around the color conversion patterns 135 and 137 (see FIG. 3 ). However, this will be described in more detail with reference to a number of embodiments below.

-First embodiment-

2 is a plan view schematically showing a micro-LED display device according to a first embodiment of the present invention, and FIG. 3 is a micro-LED display device according to the first embodiment of the present invention taken along line III-III' of FIG. A cross-sectional view showing three subpixels of an LED display device.

Prior to the description, each of the subpixels (R-SP, G-SP, B-SP) defined on the substrate 101 is provided with a driving and switching thin film transistor (DTr, not shown), respectively, but for convenience of explanation and drawings For simplicity, the driving thin film transistor DTr is shown in only one surf pixel (R-SP, G-SP, B-SP).

As shown in FIG. 2, each of a plurality of sub-pixels (R-SP, G-SP, B-SP) constituting the pixel array 110 of the micro-LED display device (100 in FIG. 1) are data lines. It may be defined by the crossing structure of the gate lines and, but is not limited thereto.

Each sub-pixel SP includes a micro-LED 120 that emits blue light, and color conversion patterns 135 and 137 are positioned above the micro-LED 120 for each sub-pixel SP, It emits red, green, and blue light.

Each of these sub-pixels SP may have various shapes, that is, the sub-pixels SP may have various planar shapes such as circular, elliptical, polygonal, and may be positioned in various arrangements.

The red, green, and blue subpixels (R-SP, G-SP, B-SP) according to an embodiment of the present invention are formed of a diamond pentile subpixel structure arranged in a diamond shape, thereby enabling ultra-high density subpixel integration. It can be implemented, and the perceived quality can also be improved.

That is, the red, green, and blue subpixels (R-SP, G-SP, B-SP) each have a rhombus shape and are arranged in a matrix manner at regular intervals, and the subpixels (R-SP, G- SP, B-SP) are arranged such that one side parallel to each other is adjacent to each other. As a result, a plurality of rhombus-shaped subpixels (R-SP, G-SP, B-SP) are arranged in a zigzag shape.

For example, the lower right side (side a defined in the drawing) of subpixels (R-SP, G-SP, B-SP) located in the first column is subpixels (R-SP, G-) located in the second column. SP, B-SP) are arranged in a way that faces each other in parallel with the upper left side (side b defined in the drawing). The diamond pentile subpixel structure includes a first pixel 1P having green and blue subpixels (G-SP, B-SP) and a second pixel having green and red subpixels (G-SP, R-SP). (P2) has a structure in which the horizontal and vertical directions are alternately arranged.

In such a diamond pentile subpixel structure, each pixel (1P, 2P) does not include three color subpixels (R-SP, G-SP, B-SP), and two color subpixels (G-SP, B-SP or G-SP, R-SP), so that the color that is not in each pixel (1P, 2P) is used in two-color sub-pixels (G-SP, B-SP) to use the color in the surrounding pixels (1P, 2P). Alternatively, according to the G-SP, R-SP) arrangement structure, three-color (Red, Green, Blue) source image data may be divided and redistributed to adjacent pixels 1P and 2P, and a subpixel rendering technique may be used.

Here, in the process of implementing the subpixel rendering, in order to implement a more vivid color through each pixel (1P, 2P), the pitch P1 between the centers of each subpixel (R-SP, G-SP, B-SP) , P2, P3) are preferably designed to be the same. That is, the first pitch P1 between the adjacent green subpixels G-SP and the second pitch P2 between the green subpixel G-SP and the blue subpixel B-SP are the same. It is designed to have the same third pitch P3 between the blue sub-pixels B-SP and the red sub-pixels R-SP.

In this way, as the pitches P1, P2, and P3 between the centers of each subpixel (R-SP, G-SP, B-SP) are formed equally, one pixel in the diamond pentile subpixel structure of the present invention It is possible to irradiate light of uniform luminance within (1P, 2P).

Here, in the micro-LED display device (100 of FIG. 1) according to the first embodiment of the present invention, the color cut-off filter 210 is disposed between the subpixels R-SP, G-SP, and B-SP in a rhombus shape. It may be located, and the color blocking filter 210 may have a configuration in which light scattering particles 211 are included in a transparent resin.

The color cut-off filter 210 includes light emitted from each subpixel (R-SP, G-SP, B-SP) incident or emitted to adjacent subpixels (R-SP, G-SP, B-SP). This prevents the occurrence of color mixing in adjacent sub-pixels (R-SP, G-SP, B-SP).

3, a gate line and a data line are disposed on a substrate 101 to define a plurality of subpixels (R-SP, G-SP, B-SP), respectively. Pixels (R-SP, G-SP, B-SP) include a light emitting area (EA) corresponding to the active layer 125 of the micro-LED 120, and non-emission along the edge of the light emitting area (EA) The area NEA is formed.

In addition, a switching region TrA in which the driving thin film transistor DTr is formed is defined at one side of the non-emission region NEA. The semiconductor layer 103 is located on the switching region TrA, and the semiconductor layer 103 is made of silicon, and the central portion of the semiconductor layer 103 is doped with a high concentration of impurities on both sides of the active region 103a forming a channel and the active region 103a. It is composed of source and drain regions 103b and 103c.

A gate insulating layer 105 is positioned on the semiconductor layer 103.

A gate electrode 104 is provided on the gate insulating layer 105 to correspond to the active region 103a of the semiconductor layer 103.

In addition, a first interlayer insulating layer 106a is positioned above the gate electrode 104, and at this time, the first interlayer insulating layer 106a and the gate insulating layer 105 below the first interlayer insulating layer 106a are source and drain located on both sides of the active region 103a. First and second semiconductor layer contact holes 107a and 107b are provided to expose regions 103b and 103c, respectively.

Next, the first interlayer insulating layer 106a including the first and second semiconductor layer contact holes 107a and 107b is spaced apart from each other, and the source is exposed through the first and second semiconductor layer contact holes 107a and 107b. And source and drain electrodes 109a and 109b contacting the drain regions 103b and 103c, respectively.

In addition, a second interlayer insulating film 106b is positioned on the first interlayer insulating film 106a exposed between the source and drain electrodes 109a and 109b and the two electrodes 109a and 109b.

At this time, the semiconductor layer 103 including the source and drain electrodes 109a and 109b and the source and drain regions 103b and 103c in contact with the electrodes 109a and 109b, and a gate positioned on the semiconductor layer 103 The insulating layer 105 and the gate electrode 104 form a driving thin film transistor DTr.

In addition, the switching thin film transistor (not shown) has the same structure as the driving thin film transistor DTr, and is connected to the driving thin film transistor DTr.

Here, in the drawing, the switching thin film transistor (not shown) and the driving thin film transistor (DTr) are shown as an example of a top gate type in which the semiconductor layer 103 is made of a polysilicon semiconductor layer or an oxide semiconductor layer. For example, it may be provided in a bottom gate type made of pure and impurity amorphous silicon.

In addition, a drain contact hole PH exposing the drain electrode 109b of the driving thin film transistor DTr is provided in the second interlayer insulating layer 106b, and a drain contact hole PH is provided above the second interlayer insulating layer 106b. A connection electrode 108 connected to the drain electrode 109b of the driving thin film transistor DTr through) is positioned.

A reflective insulating layer 131 is positioned above the substrate 101 including the connection electrode 108, and corresponding to the light emitting area EA of each subpixel (R-SP, G-SP, B-SP) The reflective insulating layer 131 is provided with a concave portion 133, respectively, and the micro-LEDs 120 are respectively positioned in the concave portion 133.

Accordingly, the reflective insulating layer 131 is disposed to surround the outer surface of each micro-LED 120, and the reflective insulating layer 131 is a micro-LED 120 among the light emitted from each micro-LED 120. By reflecting the light emitted from the side of the substrate 101 to the top of the substrate 101, it serves to improve the light efficiency of each micro-LED (120).

The reflective insulating layer 131 may be made of an insulating material including fine particles for light reflection, and may be made of an insulating material of silicon oxide (SiOx) or silicon nitride (SiNx) in which titanium oxide (TiO2) particles are dispersed. , Is not limited thereto.

At this time, a reflective pattern 124 may be further disposed on one side of the connection electrode 108, and the reflective pattern 124 is a lower side of the micro-LED 120 among the light emitted from each micro-LED 120. By reflecting the light emitted to the top again, the light efficiency of the plurality of micro-LEDs 120 may be improved.

The reflective pattern 124 may be made of a metal material having high reflective efficiency, for example, a material such as aluminum (Al) or silver (Ag), but is not limited thereto.

At this time, the reflective pattern 124 may be further extended to the outside of the micro-LED 120 to be electrically contacted with the common electrode 129, through which the reflective pattern 124 may not be floated. , It is also possible to prevent the occurrence of parasitic capacitance by the reflective pattern 124.

Here, when the reflective electrode 124 is in electrical contact with the common electrode 129, an insulating film (not shown) is formed between the reflective pattern 124 and the first semiconductor layer 123 of the micro-LED 120. It is further positioned so that the reflective pattern 124 and the first semiconductor layer 123 are insulated from each other. Each of the micro-LEDs 120 located inside the concave portion 133 of the reflective insulating layer 131 for each sub-pixel (R-SP, G-SP, B-SP) is p connected to the connection electrode 108 The first and second semiconductor layers 123 and 127 and the active layer 125 are formed as a type electrode 121, a common electrode 129 spaced apart from the p-type electrode 121, and a light emitting unit disposed therebetween. Include.

Here, the first semiconductor layer 123 is in contact with the p-type electrode 121 to provide holes to the active layer 125, and the first semiconductor layer 123 may be made of a p-GaN-based semiconductor material. , The p-GaN-based semiconductor material may be GaN, AlGaN, InGaN, or AlInGaN. Here, Mg, Zn, or Be may be used as an impurity used for doping the first semiconductor layer 123.

In addition, the active layer 125 positioned above the first semiconductor layer 123 may have a multi-quantum well (MQW) structure having a well layer and a barrier layer having a band gap higher than that of the well layer.

The active layer 125 may have a multiple quantum well structure such as InGaN/GaN.

The second semiconductor layer 127 is positioned above the active layer 125 and serves to provide electrons to the active layer 125, and the second semiconductor layer 127 may be made of an n-GaN-based semiconductor material, The n-GaN-based semiconductor material may be GaN, AlGaN, InGaN, or AlInGaN. Here, Si, Ge, Se, Te, or C may be used as the impurity used for doping the second semiconductor layer 127.

A common electrode 129 is positioned above the second semiconductor layer 127, and the common electrode 129 may be electrically connected to the second semiconductor layer 127.

At this time, the common electrodes 129 disposed on each of the sub-pixels (R-SP, G-SP, B-SP) are connected to each other, so that each micro-LED 120 shares the common electrode 129. Although shown, the common electrode 129 may be arranged separately for each sub-pixel R-SP, G-SP, and B-SP. These common electrodes 129 are indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITO), and indium tin zinc oxide to transmit light emitted from the active layer 125. ITZO), zinc oxide (ZnO), and tin oxide (TO) series of transparent conductive oxides, but are not limited thereto.

The common electrode 129 may be supplied with a common voltage. For example, the common electrode 129 extends to the non-display area NEA, and the gate driving circuit of the non-display area NEA (Fig. 1) 120), a data driving circuit (130 in FIG. 1), a control circuit (140 in FIG. 1), etc., may be supplied with a common voltage, and a gate driving circuit (120 in FIG. 1), a data driving circuit ( 130) and a switching and driving thin film transistor (not shown, DTr) that is supplied with voltage from the control circuit (140 in FIG. 1) and the like to receive a common voltage.

Here, each of the micro-LEDs 120 emits blue light from the active layer 125, and thus, the red and green subpixels (R-SP, G-SP) have a short wavelength above each of the micro-LEDs 120 A color conversion pattern 135 and 137 that converts and emits light of a long wavelength is positioned.

This is because blue light has a shorter wavelength compared to red light and green light, and the fluorescence efficiency of the color conversion patterns 135 and 137 is slightly better for light of a short wavelength, and the color conversion patterns 135 and 137 have relatively short wavelength blue light due to their characteristics. This is because color conversion into red light and green light, which are relatively long wavelength bands, is superior in terms of lifespan, compared to color conversion of red light and green light, which are relatively long wavelengths, to blue light, which is relatively short wavelength.

However, the micro-LED 120 does not necessarily emit blue light, and may be formed of a micro-LED that emits red or green light.

Here, the first color conversion pattern 135 is positioned corresponding to the emission area EA of the red sub-pixel R-SP, and the first color conversion pattern 135 receives light and receives light of the first color. Can play a role in emitting. Specifically, the first color conversion pattern 135 may be a layer that converts the received light into a wavelength of a first color.

Specifically, the first color may be red light having a wavelength of about 620 nm to 750 nm. However, the wavelength of red light is not limited to the above example, and it should be understood that all wavelength ranges that can be recognized as red light are included in the art.

In addition, the second color conversion pattern 137 is positioned corresponding to the emission area EA of the green sub-pixel G-SP, and the second color conversion pattern 137 is also similar to the first color conversion pattern 135. As a layer that receives light and emits light of a second color, specifically, it may be a layer that converts the received light into a wavelength of a second color.

The second color may be green having a wavelength of about 495 nm to 570 nm. However, the green light wavelength is not limited to the above example, and it should be understood that all wavelength ranges that can be recognized as green light are included in the art.

A color conversion material is included in the first and second color conversion patterns 135 and 137, and the color conversion material may be, for example, a quantum dot, a fluorescent dye, or a combination thereof. Fluorescent dyes include, for example, organic fluorescent materials, inorganic fluorescent materials, and combinations thereof.

The quantum dots may be selected from a group II-VI compound, a group III-V compound, a group IV-VI compound, a group IV element, a group IV compound, and combinations thereof, but are not limited thereto.

Group II-VI compounds include binary compounds selected from the group consisting of CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and mixtures thereof; CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, MgZnTe, HgZnS, MgZnTe It may be selected from the group consisting of small compounds and quaternary compounds selected from the group consisting of HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, and mixtures thereof.

The group III-V compound is a binary compound selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and mixtures thereof; GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP and a ternary compound selected from the group consisting of a mixture thereof and GaAlNAs, GaAlNSb, GaAlPAs , GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, and mixtures thereof.

The IV-VI compound is a binary compound selected from the group consisting of SnS, SnSe, SnTe, PbS, PbSe, PbTe, and mixtures thereof; SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, and a quaternary compound selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe and mixtures thereof. It may be selected from the group consisting of.

The group IV element may be selected from the group consisting of Si, Ge, and mixtures thereof.

The group IV compound may be a binary compound selected from the group consisting of SiC, SiGe, and mixtures thereof.

In this case, the two-element compound, the three-element compound, or the quaternary element compound may be present in the particle at a uniform concentration, or may be present in the same particle by partially dividing the concentration distribution into different states. In addition, one quantum dot may have a core/shell structure surrounding another quantum dot.

The interface between the core and the shell may have a concentration gradient that decreases toward the center of the concentration of elements present in the shell.

These quantum dots may have a full width of half maximum (FWHM) of the emission wavelength spectrum of about 45 nm or less, preferably about 40 nm or less, more preferably about 30 nm or less, and improve color purity or color reproducibility within this range. I can make it. In addition, since the light emitted through the quantum dots is emitted in all directions, a wide viewing angle can be improved.

In addition, the shape of the quantum dot is of a commonly used type and is not particularly limited, but more specifically, spherical, pyramidal, multi-arm, or cubic nanoparticles, nanotubes, nanowires, It can be used in the form of nanofibers, nanoplatelet particles, and the like.

The fluorescent dye may be, for example, a red fluorescent dye, a green fluorescent dye, a dye that emits light of a third color other than that, or a combination thereof.

Red fluorescent dyes are substances that absorb light in the green wavelength band and emit light in the red wavelength band.For example, (Ca, Sr, Ba)S, (Ca, Sr, Ba)2Si5N8, CaAlSiN3, CaMoO4, It may be at least one of Eu2Si5N8, K2SiF6, SrCaAlSiN3, CaS, and SrLiAlN3. In addition, the red fluorescent dye may be, for example, a material having a maximum emission peak at 617 nm to 637 nm and a half width (FWHM) of 10 nm to 100 nm.

Green fluorescent dye is a material that absorbs light in the blue wavelength band and emits light in the green wavelength band. For example, yttrium aluminum garnet (YAG), (Ca, Sr, Ba)2SiO4, SrGa2S4, barium magnesium aluminum Among nate (BAM), alpha sialon (α-SiAlON), beta sialon (β-SiAlON), Ca3Sc2Si3O12, Tb3Al5O12, BaSiO4, CaAlSiON, Sr1-xBax)Si2O2N2, LuAG, (Ca, Sr, Ba)Si2O2N2, GaS There may be at least one.

In addition, the green fluorescent dye may be, for example, a material having a maximum emission peak at 510 nm to 525 nm and a half width (FWHM) of 60 nm to 70 nm. In a specific example, as the green fluorescent dye, a first green fluorescent dye having a maximum emission peak at 520 nm and a half value width (FWHM) of 62 nm, and a second green dye having a maximum emission peak at 511 nm and a half value width (FWHM) of 64 nm. Fluorescent dyes can be used. However, the green fluorescent dye is not limited to the above-described examples.

Meanwhile, the fluorescent dyes listed so far may be made of inorganic fluorescent materials and BODIPY-based fluorescent materials as organic fluorescent materials.

In addition, Perovskite materials are also applicable. In this way, each of the subpixels R-SP, G-SP, and B-SP has the first and second colors corresponding to the emission areas EA of the red and green subpixels R-SP and G-SP, respectively. Since the conversion patterns 135 and 137 are positioned, the blue light emitted from each micro-LED 120 is a first color conversion pattern located in the red subpixel R-SP in the red subpixel R-SP. The wavelength of blue light is converted to red light by 135, and in the green subpixel (G-SP), the blue light is wavelength converted to green light by the second color conversion pattern 137 located in the green subpixel (G-SP). Will be converted.

Accordingly, red, green, and blue light is emitted to each of the red, green, and blue subpixels (R-SP, G-SP, B-SP), and the micro-LED display device according to the first embodiment of the present invention (Fig. 1 of 100) realizes full color with high luminance.

At this time, in the blue sub-pixel (B-SP), the blue light of the image can be realized as it is through the blue light emitted from the micro-LED 120, so that the blue sub-pixel (B-SP) emits light from the micro-LED 120 Nothing may be positioned or a transparent resin may be positioned so that blue light can be transmitted as it is.

Alternatively, when the first and second color conversion patterns 135 and 137 are made of quantum dots, the color purity of red light and green light realized from red and green subpixels R-SP and G-SP is At the same time, since it has the effect of maintaining the color purity as the first time even after light emission for a long time, quantum dots can be included in the transparent resin even in the blue sub-pixel (B-SP).

In other words, blue light emitted from the micro-LED 120 reacts to the transparent resin corresponding to the blue sub-pixel (B-SP), and blue quantum dots emitting light in the blue wavelength band of higher purity are further distributed and located. will be.

Meanwhile, a black matrix 134 may be further provided at the boundary of each subpixel (R-SP, G-SP, B-SP). That is, the black matrix 134 is positioned around the edge of the emission area EA for each sub-pixel (R-SP, G-SP, B-SP), and the black matrix 134 includes each sub-pixel ( R-SP, G-SP, B-SP) light leakage caused by leaking blue light into the spaced area between the first and second color conversion patterns 135 and 137 that fluoresce light of different colors. It plays a role of restraint.

In particular, in the micro-LED display device (100 of FIG. 1) according to the first embodiment of the present invention, the color cutoff filter 210 is positioned above the black matrix 134.

That is, as the color cut-off filter 210 is positioned above the black matrix 134 surrounding the edge of the emission area EA for each sub-pixel (R-SP, G-SP, B-SP), the first and second colors It is arranged to surround the edges of the transform patterns 135 and 137.

In addition, in the blue sub-pixel B-SP, it is arranged so as to surround the edge of the light emitting area EA of the blue sub-pixel B-SP.

The color blocking filter 210 may be formed by dispersing the light-scattering particles 211 in a transparent resin made of an acrylic resin, and the light-scattering particles 211 may be particles having a refractive index different from that of the transparent resin. The light scattering particles 211 are not particularly limited as long as they are particles capable of scattering incident light, but may be, for example, metal oxide particles or organic particles.

Examples of the metal oxide include titanium oxide (TiO2), zirconium oxide (ZrO2), aluminum oxide (Al2O3), indium oxide (In2O3), zinc oxide (ZnO) or tin oxide (SnO2), and the organic material Acrylic resin or urethane resin, etc. can be illustrated.

Through these light scattering particles 211, among the red light, green light, and blue light emitted from red, green, and blue subpixels (R-SP, G-SP, B-SP), the light directed to the color blocking filter 210 Will be scattered in the direction.

In particular, the light-scattering particles 211 scatter light in a direction opposite to the direction in which the light-scattering particles 211 are incident, so that most of the light is reflected in a direction opposite to the incident direction.

Therefore, red light, green light, and blue light implemented from each sub-pixel (R-SP, G-SP, B-SP) enters or exits the area of other adjacent sub-pixels (R-SP, G-SP, B-SP). It is possible to prevent the occurrence of color mixing.

That is, in the blue sub-pixel (B-SP), the blue light implemented from the micro-LED 120 is used to implement an image. At this time, the blue light implemented in the blue sub-pixel (B-SP) is the blue sub-pixel (B-SP). ), the color-blocking filter 210 including the light-scattering particles 211 surrounding the edge of the light-emitting area EA of) does not enter or exit the adjacent subpixels R-SP and G-SP.

In addition, in the red sub-pixel (R-SP) and the green sub-pixel (G-SP), blue light implemented from the micro-LED 120 passes through the first and second color conversion patterns 135 and 137, respectively, and In the process of wavelength conversion to green light, some of the light is directed to the side of the first and second color conversion patterns 135 and 137 to adjacent subpixels (G-SP, B-SP or R-SP, B-SP). Can be entered. However, the micro-LED display device (100 of FIG. 1) according to the first embodiment of the present invention includes a color including the light scattering particles 211 to surround the edges of the first and second color conversion patterns 135 and 137. By positioning the cut-off filter 210, red light and green light are incident from the first and second color conversion patterns 135 and 137 to adjacent subpixels (G-SP, B-SP, R-SP, B-SP) or It can be prevented from being emitted.

Therefore, red light, green light, and blue light implemented from each sub-pixel (R-SP, G-SP, B-SP) enters or exits the area of other adjacent sub-pixels (R-SP, G-SP, B-SP). It is possible to prevent the occurrence of color mixing.

It is preferable that the height h1 of the color cut-off filter 210 is formed equal to the height of the first and second color conversion patterns 135 and 137, and the first and second color conversion patterns 135 and 137 ) May be disposed to fill the space defined by the color cut-off filter 210 by using an inkjet printing method or a reverse offset printing method.

As described above, in the micro-LED display device (100 in FIG. 1) according to the first embodiment of the present invention, the light scattering particles 211 between each subpixel (R-SP, G-SP, B-SP) By positioning the included color-cutting filter 210, it is possible to prevent color mixing in adjacent sub-pixels R-SP, G-SP, and B-SP.

Through this, the micro-LED display device (100 in FIG. 1) according to the first embodiment of the present invention can implement more vivid red light, green light, and blue light, thereby realizing high-quality high-color reproduction.

-Second embodiment-

4 is a plan view schematically illustrating a micro-LED display device according to a second embodiment of the present invention, and FIGS. 5 and 6 are the present inventions taken along lines V-V' and VI-VI' of FIG. 4, respectively. Is a cross-sectional view illustrating three subpixels of a micro-LED display device according to a second embodiment of the present invention.

7A is a graph showing the transmittance of the first cut-off filter according to the wavelength, and FIG. 7B is a graph showing the transmittance of the second cut-off filter according to the wavelength.

As shown in FIG. 4, a plurality of subpixels (R-SP, 1G-SP, 2G-SP, 3G-SP, B-) constituting the pixel array 110 of the micro-LED display device (100 in FIG. 1) Each of the SPs) includes a micro-LED 120 emitting blue light, and each subpixel (R-SP, 1G-SP, 2G-SP, 3G-SP, B-SP) is placed on the top of the micro-LED 120. The color conversion patterns 135 and 137 are positioned to emit red, green, and blue light.

These plurality of subpixels (R-SP, 1G-SP, 2G-SP, 3G-SP, B-SP) consist of a diamond pentile subpixel structure arranged in a diamond shape, and ultra-high density subpixel integration can be implemented. In addition, it can also improve the perceived quality.

That is, the red, green, and blue subpixels (R-SP, 1G-SP, 2G-SP, 3G-SP, B-SP) each have a rhombus shape and are arranged in a matrix manner at regular intervals. The pixels (R-SP, 1G-SP, 2G-SP, 3G-SP, B-SP) are arranged such that one side parallel to each other is adjacent to each other. As a result, a plurality of rhombus-shaped subpixels (R-SP, 1G-SP, 2G-SP, 3G-SP, B-SP) are arranged in a zigzag form.

For example, the lower right side (side a defined in the drawing) of subpixels (R-SP, G-SP, B-SP) located in the first column is subpixels (R-SP, G-) located in the second column. SP, B-SP) are arranged in a way that faces each other in parallel with the upper left side (side b defined in the drawing). This diamond pentile subpixel structure is the ratio of the area occupied by subpixels (light emitting areas) (R-SP, 1G-SP, 2G-SP, 3G-SP, B-SP) per unit area, which is the fill factor and luminance. And color temperature. That is, the green sub-pixel (1G-SP) included in all sub-pixels (R-SP, 1G-SP, 2G-SP, 3G-SP, B-SP) to match the color temperature. , 2G-SP, 3G-SP) may have a large number compared to red or blue subpixels (R-SP, B-SP).

Accordingly, in the micro-LED display device (100 of FIG. 1) according to the second embodiment of the present invention, a plurality of green subpixels (1G-SP, 2G-SP, 3G-SP) are spaced apart from each other at a predetermined interval to form a first pixel row. The green subpixels (1G-SP, 2G-SP, 3G-SP) have a plurality of blue colors so that the lower right side (side a defined in the drawing) and the upper left side (side b defined in the drawing) are parallel. The sub-pixels B-SP and the plurality of red sub-pixels R-SP are spaced apart from each other at predetermined intervals and are repeatedly arranged to form a second pixel row.

The diamond pentile subpixel structure includes a first pixel 1P having a first green subpixel 1G-SP in a first pixel row and a blue subpixel B-SP in a second pixel row, A structure in which second green subpixels 2G-SP located in one pixel row and second pixels 2P having red subpixels R-SP in the second pixel row are alternately arranged in horizontal and vertical directions Will have.

In this diamond pentile subpixel structure, each pixel (1P, 2P) does not include three color subpixels (R-SP, 1G-SP, 2G-SP, 3G-SP, B-SP), and two color subpixels ( Since it is composed of 1G-SP, B-SP or 2G-SP, R-SP, the color that is not in each pixel (1P, 2P) is used in two-color sub-pixels (1G-SP, Uses subpixel rendering technology that divides and redistributes 3 color (red, green, blue) source image data into adjacent pixels (1P, 2P) according to the B-SP or 2G-SP, R-SP) arrangement structure. Should be.

Here, in the process of implementing the subpixel rendering, in order to implement a more vivid color through each pixel (1P, 2P), the pitch P1 between the centers of each subpixel (R-SP, G-SP, B-SP) , P2, P3) are preferably designed to be the same.

That is, the first pitch P1 between the adjacent green subpixels G-SP and the second pitch P2 between the green subpixel G-SP and the blue subpixel B-SP are the same. It is designed to have the same third pitch P3 between the blue sub-pixels B-SP and the red sub-pixels R-SP.

In this way, as the pitches P1, P2, and P3 between the centers of each subpixel (R-SP, G-SP, B-SP) are formed equally, one pixel in the diamond pentile subpixel structure of the present invention It is possible to irradiate light of uniform luminance within (1P, 2P).

Here, the micro-LED display device (100 of FIG. 1) according to the second embodiment of the present invention includes rhombic subpixels (R-SP, 1G-SP, 2G-SP, 3G-SP, B-SP) The color cut-off filters 220 and 230 are further positioned between the blue sub-pixels (B-SP) and the green sub-pixels (1G-SP, 2G-SP) in the pixel row adjacent to the blue sub-pixel (B-SP). ), the first cut-off filter 220 is positioned, and the green subpixels 2G-SP and 3G- of the pixel row are positioned adjacent to the red subpixel R-SP and the red subpixel R-SP. The second cut-off filter 230 is positioned between the SP).

That is, in the blue subpixels B-SP of the first pixel 1P, the first and second green subpixels 1G-SP and 2G-SP in the first pixel row and the first and second green subpixels in the third pixel row. 2 The green subpixels 1G-SP and 2G-SP are located adjacent to each other, and the first cut-off filter 220 surrounds the edge of the blue subpixel B-SP and surrounds the first and second pixel rows. It is positioned between the green subpixels 1G-SP and 2G-SP and the first and second green subpixels 1G-SP and 2G-SP of the second pixel row.

In addition, the red subpixel R-SP of the second pixel 2P positioned in the same second pixel row as the blue subpixel B-SP of the first pixel 1P has the second and The third green subpixels 2G-SP and 3G-SP and the second and third green subpixels 2G-SP and 3G-SP in the third pixel row are adjacent to each other, and the second cut-off filter 230 ) Denotes the second and third green subpixels 2G-SP and 3G-SP in the first pixel row and the second and third green subpixels in the second pixel row around the edge of the red subpixel R-SP. It is located between (2G-SP, 3G-SP).

In this case, the first cut-off filter 220 is a blue sub-pixel of the first and second green sub-pixels 1G-SP and 2G-SP of the first and second pixel rows surrounding the edge of the blue sub-pixel B-SP. The second cut-off filter 230 is formed by connecting the sides facing the pixel B-SP, and the second cut-off filter 230 includes second and third green lines of the first and second pixel rows surrounding the edge of the red sub-pixel R-SP. It is formed by connecting corners facing each other of the subpixels 2G-SP and 3G-SP.

The color cut-off filter composed of the first and second cut-off filters 220 and 230 is a micro-LED 120 of each sub-pixel (R-SP, 1G-SP, 2G-SP, 3G-SP, B-SP). ) In the process of wavelength conversion into red light and green light by the color conversion pattern 135. 137, neighboring subpixels (R-SP, 1G-SP, 2G-SP, 3G-SP, B -SP) plays a role of preventing color mixing.

Referring to FIGS. 5 and 6 for a more detailed look, in the non-emission area NEA on the substrate 101 surrounding the edge of the emission area EA corresponding to the active layer 125 of the micro-LED 120 On the switching region TrA, the semiconductor layer 103 including the active region 103a and the source and drain regions 103b and 103c, the gate insulating film 105, the gate electrode 107, and the gate insulating film Driving including source and drain electrodes 109a and 109b in contact with the source and drain regions 103b and 103c, respectively, through the first and second semiconductor layer contact holes 107a and 107b provided in the first interlayer insulating layer 106a The thin film transistor DTr is located.

In addition, a second interlayer insulating film 106b is positioned on the source and drain electrodes 109a and 109b and the first interlayer insulating film 106a exposed between the two electrodes 109a and 109b, and the second interlayer insulating film 106b A drain contact hole PH exposing the drain electrode 109b of the driving thin film transistor DTr is provided.

A connection electrode 108 connected to the drain electrode 109b of the driving thin film transistor DTr through the drain contact hole PH is positioned above the second interlayer insulating layer 106b.

A reflective insulating layer 131 is positioned above the substrate 101 including the connection electrode 108, and the emission area EA of each subpixel (R-SP, 1G-SP, 2G-SP, B-SP) The reflective insulating layer 131 corresponding to) is provided with a concave portion 133, and the micro-LEDs 120 are respectively positioned in the concave portion 133.

At this time, a reflective pattern 124 may be further disposed on one side of the connection electrode 108, and the reflective pattern 124 is a lower side of the micro-LED 120 among the light emitted from each micro-LED 120. By reflecting the light emitted to the top again, the light efficiency of the plurality of micro-LEDs 120 may be improved.

In addition, each of the micro-LEDs 120 located inside the concave portion 133 of the reflective insulating layer 131 for each subpixel (R-SP, 1G-SP, 2G-SP, B-SP) is a connection electrode 108 ), a p-type electrode 121 connected to the p-type electrode 121, a common electrode 129 spaced apart from the p-type electrode 121, and the first and second semiconductor layers 123 and 127 as light emitting units disposed therebetween. It includes an active layer 125.

A common electrode 129 is positioned above the second semiconductor layer 127, and the common electrode 129 may be electrically connected to the second semiconductor layer 127.

Here, each micro-LED 120 emits blue light from the active layer 125, and thus, each micro-LED 120 in red and green subpixels (R-SP, 1G-SP, 2G-SP) ) At the top, a color conversion pattern 135 and 137 that converts short wavelength light into long wavelength light and emits it is positioned.

Here, the first color conversion pattern 135 is positioned corresponding to the emission area EA of the red sub-pixel R-SP, and the first color conversion pattern 135 receives light and receives light of the first color. Can play a role in emitting. Specifically, the first color conversion pattern 135 may be a layer that converts the received light into a wavelength of a first color.

Specifically, the first color may be red light having a wavelength of about 620 nm to 750 nm.

In addition, the second color conversion pattern 137 is positioned corresponding to the emission area EA of the green subpixels 1G-SP and 2G-SP, and the second color conversion pattern 137 is also a first color conversion pattern ( As in (135), as a layer that receives light and emits light of a second color, specifically, it may be a layer that converts the received light into a wavelength of a second color.

The second color may be green having a wavelength of about 495 nm to 570 nm.

In this way, each sub-pixel (R-SP, 1G-SP, 2G-SP, B-SP) corresponds to the emission area EA of the red and green sub-pixels (R-SP, 1G-SP, 2G-SP). Thus, since the first and second color conversion patterns 135 and 137 are respectively positioned, the blue light emitted from each micro-LED 120 is the red sub-pixel R-SP in the red sub-pixel R-SP. Blue light is wavelength-converted to red light by the first color conversion pattern 135 located at, and in green subpixels 1G-SP and 2G-SP, the green subpixels 1G-SP and 2G-SP Blue light is wavelength converted into green light by the second color conversion pattern 137.

Accordingly, red, green, and blue light is emitted to each of the red, green, and blue subpixels (R-SP, 1G-SP, 2G-SP, B-SP), and the micro-LED according to the second embodiment of the present invention The display device (100 in FIG. 1) implements full color with high luminance.

On the other hand, a black matrix 134 is further provided at the boundary of each sub-pixel (R-SP, 1G-SP, 2G-SP, B-SP), that is, each sub-pixel (R-SP, 1G-SP, 2G) The black matrix 134 is positioned around the edge of the emission area (EA) for each SP, B-SP), and the black matrix 134 includes each subpixel (R-SP, 1G-SP, 2G-SP). , B-SP) plays a role of suppressing light leakage that occurs as blue light is emitted into a spaced area between the first and second color conversion patterns 135 and 137 that fluoresce light of different colors.

In particular, in the micro-LED display device (100 of FIG. 1) according to the second embodiment of the present invention, color cut-off filters 220 and 230 are positioned above the black matrix 134.

That is, as the color cut-off filters 220 and 230 are positioned above the black matrix 134 surrounding the edge of the emission area EA for each sub-pixel (R-SP, 1G-SP, 2G-SP, B-SP) In the red and green subpixels R-SP, 1G-SP, and 2G-SP, they are arranged to surround the edges of the first and second color conversion patterns 135 and 137.

In addition, in the blue sub-pixel B-SP, it is arranged so as to surround the edge of the light emitting area EA of the blue sub-pixel B-SP.

Here, referring to FIG. 5, a color cut-off filter including a first cut-off filter 220 is positioned above the black matrix 134 surrounding the edge of the light-emitting area EA of the blue sub-pixel B-SP. 1 Since the cut-off filter transmits light in a wavelength range of 600 to 800 nm, it transmits only red light having the wavelength range.

That is, FIG. 7A is a graph showing the transmittance of the first cut-off filter 220 according to the wavelength. The first cut-off filter 220 has a high transmittance in a wavelength band of 600 to 800 nm corresponding to red light, and It has a low transmittance in a wavelength band of 600 nm or less corresponding to blue light.

Accordingly, the first cut-off filter 220 blocks all light other than light in a wavelength band of 600 to 800 nm.

Blue light emitted from the micro-LED 120 of the blue sub-pixel B-SP is positioned so that the first cut-off filter 220 covers the edge of the emission area EA of the blue sub-pixel B-SP. It is possible to prevent the blue sub-pixel (B-SP) from entering or exiting the area of the other sub-pixels (R-SP, 1G-SP, 2G-SP) adjacent to.

Accordingly, color mixing can be prevented from occurring in adjacent subpixels (R-SP, 1G-SP, 2G-SP, and B-SP).

And, referring to FIG. 6, the edges of the first and second color conversion patterns 135 and 137 positioned in the red sub-pixels R-SP and the green sub-pixels 1G-SP and 2G-SP are respectively second blocked. A color cut-off filter made of the filter 230 is positioned. Since the second cut-off filter 230 transmits light in a wavelength range of 400 to 500 nm, only blue light having a wavelength band thereof is transmitted.

Here, the attached FIG. 7B is a graph showing the transmittance of the second cut-off filter 230 according to the wavelength, and the second cut-off filter 230 has a high transmittance in a wavelength band of 400 nm to 500 nm corresponding to blue light, and green light It has a low transmittance for a wavelength band of 500 nm to 565 nm corresponding to and 620 nm to 780 nm corresponding to red light.

Accordingly, the second cut-off filter 230 blocks all light other than light in a wavelength band of 400 to 500 nm.

Since the second cut-off filter 230 is positioned to surround the edges of the first and second color conversion patterns 135 and 137, the red sub-pixel R-SP and the green sub-pixel 1G-SP and 2G-SP ) In the process of wavelength conversion of the blue light emitted from the micro-LED 120 by the first and second color conversion patterns 135 and 137, respectively, the red and green subpixels R-SP, 1G-SP, 2G It is possible to prevent red and green light from entering or exiting the regions of other sub-pixels (1G-SP, 2G-SP, B-SP or R-SP, B-SP) adjacent to the -SP).

These first and second cut-off filters 220 and 230 are dissolved in the base resin and the base resin, respectively, and absorb light other than the wavelength band of 400 to 500 nm and the wavelength band of 600 to 800 nm, respectively. ) Can be included.

As described above, the micro-LED display device (100 of FIG. 1) according to the second embodiment of the present invention has a wavelength of 600 to 800 nm surrounding the edge of the light emitting area EA of the blue subpixel B-SP. A wavelength of 400 to 500 nm is placed around the edge of the emission area EA of the red and green subpixels (R-SP, 1G-SP, 2G-SP) by placing the first cut-off filter 220 that transmits only the light of the band. Red light and green light emitted from the micro-LED 120 from each sub-pixel (R-SP, 1G-SP, 2G-SP, B-SP) by positioning the second cut-off filter 230 that transmits only the band of light , It is possible to prevent the occurrence of color mixing in the adjacent subpixels (R-SP, 1G-SP, 2G-SP, B-SP) of blue light.

Through this, the micro-LED display device (100 in FIG. 1) according to the second exemplary embodiment of the present invention can implement more vivid red light and green light, thereby implementing higher-quality high-color reproduction.

8 is a cross-sectional view illustrating three subpixels of a micro-LED display device according to another configuration of the second embodiment of the present invention.

As shown in FIG. 8, the first cut-off filter 220 and the red and green sub-pixels R are positioned above the black matrix 134 surrounding the edge of the emission area EA of the blue sub-pixel B-SP. The light-scattering particles 211 may be dispersed and contained in the second blocking filter 230 positioned above the black matrix 134 surrounding the edge of the emission area EA of -SP and G-SP.

The light-scattering particles 211 may be particles having a refractive index different from the first and second blocking filters 220 and 230, and the light-scattering particles 211 are not particularly limited as long as they are particles capable of scattering incident light. For example, it may be a metal oxide particle or an organic particle.

Examples of the metal oxide include titanium oxide (TiO2), zirconium oxide (ZrO2), aluminum oxide (Al2O3), indium oxide (In2O3), zinc oxide (ZnO) or tin oxide (SnO2), and the organic material Acrylic resin or urethane resin, etc. can be illustrated.

Through the light scattering particles 211, the first and second cut-off filters 220 and 230 among red light, green light, and blue light emitted from red, green, and blue subpixels (R-SP, G-SP, B-SP) The light directed toward the is scattered in several directions.

That is, in the micro-LED display device (100 of FIG. 1) according to the second embodiment of the present invention, only light in a wavelength band of 600 to 800 nm surrounding the edge of the light emitting area EA of the blue subpixel B-SP The first cut-off filter 220 that transmits the light is positioned, and the first cut-off filter 220 is positioned around the edge of the emission area EA of the red and green sub-pixels R-SP and G-SP, and transmits only light in the wavelength band of 400 to 500 nm. 2 By placing the cut-off filter 230, the red light, green light, and blue light emitted from the micro-LED 120 from each sub-pixel (R-SP, G-SP, B-SP) G-SP, B-SP) can prevent the occurrence of color mixing, but by further containing the light-scattering particles 211 in the first and second cut-off filters 220, 230, the light-scattering particles 211 Through this, it is possible to prevent the light from entering or exiting the adjacent subpixels (R-SP, G-SP, B-SP) once more.

Through this, it is possible to implement more vivid red light, green light, and blue light, thereby realizing high-quality high-color reproduction.

9 is a cross-sectional view illustrating three subpixels of a micro-LED display device according to another configuration of the second embodiment of the present invention.

As shown in FIG. 9, a first cut-off filter 220 positioned above the black matrix 134 surrounding the edge of the emission area EA of the blue sub-pixel B-SP is positioned, and the red and green sub-pixels The second blocking filter 230 is positioned to surround the edges of the first and second color conversion patterns 135 and 137 respectively corresponding to the emission areas EA of the pixels R-SP and G-SP. .

In this case, the second cut-off filter 230 is further positioned corresponding to the emission area EA of the blue sub-pixel B-SP.

The second cut-off filter 230 has a high transmittance in a wavelength band of 400 nm to 500 nm corresponding to blue light, and low for a wavelength band of 500 nm to 565 nm corresponding to green light and 620 nm to 780 nm corresponding to red light. It has a transmittance.

Accordingly, the second cut-off filter 230 blocks all light other than light in a wavelength band of 400 to 500 nm.

By positioning the second cut-off filter 230 to correspond to the emission area EA of the blue sub-pixel B-SP, the second cut-off filter 230 for light other than the blue light in the blue sub-pixel B-SP As it is blocked by, only blue light of higher purity can be emitted from the blue sub-pixel B-SP. That is, in the micro-LED display device (100 of FIG. 1) according to the second embodiment of the present invention, only light in a wavelength band of 600 to 800 nm surrounding the edge of the light emitting area EA of the blue subpixel B-SP The first cut-off filter 220 that transmits the light is positioned, and the first cut-off filter 220 is positioned around the edge of the emission area EA of the red and green sub-pixels R-SP and G-SP, and transmits only light in the wavelength band of 400 to 500 nm. 2 By placing the cut-off filter 230, the red light, green light, and blue light emitted from the micro-LED 120 from each sub-pixel (R-SP, G-SP, B-SP) While it is possible to prevent color mixing in the G-SP and B-SP), by further placing the second cut-off filter 230 in the light emitting area EA of the blue sub-pixel B-SP, the blue sub-pixel Even if some red light and green light are incident from the red and green subpixels R-SP and G-SP located adjacent to the (B-SP), only high-purity blue light can be emitted.

Through this, it is possible to implement a more vivid blue light, it is possible to implement high-quality high-color reproduction.

In addition, although not shown, a transparent resin may be located in addition to the second cut-off filter 230 corresponding to the emission area EA of the blue sub-pixel (B-SP), or a third color conversion in which quantum dots are included in the transparent resin. Patterns may be located.

As described above, the micro-LED display device (100 of FIG. 1) according to the second embodiment of the present invention has a wavelength of 600 to 800 nm surrounding the edge of the light emitting area EA of the blue subpixel B-SP. A first cut-off filter 220 that transmits only the light of the band is positioned, and only light in the wavelength band of 400 to 500 nm is surrounded by the edge of the emission area EA of the red and green subpixels R-SP and G-SP. By placing the transmitting second cut-off filter 230, the red, green, and blue light emitted from the micro-LED 120 from each sub-pixel (R-SP, G-SP, B-SP) is adjacent to the sub-pixel R -It can prevent color mixing in SP, G-SP, B-SP).

Through this, the micro-LED display device (100 in FIG. 1) of the second embodiment of the present invention can implement more vivid red light, green light, and blue light, thereby realizing high-quality high-color reproduction.

The present invention is not limited to the above embodiments, and various modifications may be made without departing from the scope of the present invention.

110: pixel array
220, 230: first and second cut-off filters (color cut-off filters)

Claims (15)

A substrate on which a first subpixel representing a first color and a second subpixel representing a second color having a wavelength band greater than that of the first color and disposed adjacent to the first subpixel are defined;
Light-emitting diodes positioned in the light-emitting regions of the first and second subpixels, respectively, and emitting the first color;
A first color conversion pattern positioned to correspond to the emission region of the second sub-pixel and converting the first color into a wavelength of the second color;
A color blocking filter positioned around an edge of the first color conversion pattern and an edge of the emission area of the first subpixel
LED display device comprising a.
The method of claim 1,
Expressing a third color having a wavelength band greater than that of the second color, and including a third subpixel disposed adjacent to the second subpixel,
A second color conversion pattern positioned to correspond to the third subpixel and converting the first color into a wavelength of the third color,
The color cut-off filter is located around an edge of the second color conversion pattern.
The method of claim 2,
An LED display device in which a black matrix is located under the color blocking filter.
The method of claim 2,
The color-blocking filter is an LED display device in which light-scattering particles are dispersed in a transparent resin.
The method of claim 2,
The first color is blue light,
The color cut-off filter surrounding the edge of the light-emitting region of the first sub-pixel has a high transmittance in a wavelength band of 600 to 800 nm, and a first cut-off filter having a low transmittance in a wavelength band of 600 nm or less.
The method of claim 5,
An LED display device in which light scattering particles are dispersed in the color blocking filter.
The method of claim 5,
Each of the first to third subpixels has a rhombus shape, and the lower right side of each of the first to third subpixels positioned above is parallel to the upper left side of each of the first to third subpixels positioned below. Are arranged opposite each other,
The second subpixels are arranged at predetermined intervals along the first and third pixel rows,
Along the second pixel row between the first and third pixel rows, the first subpixel and the third subpixel are arranged to be spaced apart from each other by a predetermined interval at an intersection,
The first cut-off filter is positioned between the first sub-pixel and the second sub-pixel adjacent to the first sub-pixel.
The method of claim 7,
The first cut-off filter is formed by connecting the sides of the second sub-pixel facing the first sub-pixel.
The method of claim 2,
The second color is green light, the third color is red light,
The color blocking filter surrounding the edge of the second color conversion pattern of each of the second and third subpixels has a high transmittance in a wavelength band of 400 nm to 500 nm, and a low transmittance for a wavelength band of 500 nm to 780 nm. LED display device comprising a second cut-off filter having a.
The method of claim 9,
An LED display device in which light scattering particles are dispersed in the color blocking filter.
The method of claim 9,
Each of the first to third subpixels has a rhombus shape, and forms a diamond pentile subpixel structure arranged in a diamond shape,
The second subpixels are arranged at predetermined intervals along the first and third pixel rows,
Along the second pixel row between the first and third pixel rows, the first subpixel and the third subpixel are arranged to be spaced apart from each other by a predetermined interval at an intersection,
An LED display device in which the second cut-off filter is positioned between the third sub-pixel and the second sub-pixel adjacent to the third sub-pixel.
The method of claim 11,
The second cut-off filter is formed by connecting the sides of the second sub-pixel facing the first sub-pixel.
The method of claim 1,
An LED display device having a high transmittance in a wavelength band of 400 nm to 500 nm, and a color-cutting filter having a low transmittance in a wavelength band of 500 nm to 780 nm, corresponding to the light emitting region of the first subpixel. .
The method of claim 2,
The first color conversion pattern includes quantum dots for converting the first color into the second color,
The second color conversion pattern LED display device comprising a quantum dot for converting the first color to the third color.
The method of claim 1,
The light emitting diode includes a common electrode, a first semiconductor layer disposed under the common electrode, an active layer disposed under the first semiconductor layer in the emission region, and emitting the first color, and a second semiconductor layer disposed under the active layer. A semiconductor layer, and a p-type electrode positioned under the second semiconductor layer,
The p-type electrode is connected to the driving thin film transistor on the substrate.

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