CN220326163U - Display device - Google Patents
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- CN220326163U CN220326163U CN202321190445.1U CN202321190445U CN220326163U CN 220326163 U CN220326163 U CN 220326163U CN 202321190445 U CN202321190445 U CN 202321190445U CN 220326163 U CN220326163 U CN 220326163U
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
Abstract
There is provided a display device including: a first substrate; a second substrate opposite to the first substrate; a light emitting element layer on the first substrate and including at least one light emitting element; an encapsulation layer on the light emitting element layer and including at least one inorganic encapsulation layer and at least one organic encapsulation layer; a color conversion transmission layer on the encapsulation layer and configured to convert light emitted from the at least one light emitting element into light having a different color; a low refractive inorganic layer on the color conversion transmission layer and having a refractive index smaller than that of the color conversion transmission layer; and a color filter layer on a surface of the second substrate opposite to the first substrate. The display device can improve light efficiency of light.
Description
The present application claims priority and rights of korean patent application No. 10-2022-0060452 filed on 5 months 17 of 2022 and korean patent application No. 10-2022-0068504 filed on 6 months 3 of 2022, each of which is incorporated herein by reference in its entirety.
Technical Field
Aspects of some embodiments of the present disclosure relate to a display device.
Background
Due to the rapid development of the display field for visually expressing various kinds of electrical signal information, various display devices having remarkable characteristics such as small thickness, small weight, and low power consumption have been introduced.
The display device may include a liquid crystal display device that uses light from a backlight unit without independently emitting light, or a light emitting display device that includes a display element capable of emitting light. The light emitting display device may include a display element including an emission layer.
The above information disclosed in this background section is only for enhancement of understanding of the background and therefore the information discussed in this background section does not necessarily form the prior art.
Disclosure of Invention
The utility model aims to provide a high-efficiency display device. However, the technical object is merely an example, and the scope of the embodiments according to the present disclosure is not limited thereto.
Additional aspects will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the disclosed presented embodiments.
According to one or more embodiments, a display device includes: a first substrate; a second substrate opposite to the first substrate; a light emitting element layer on the first substrate and including at least one light emitting element; an encapsulation layer on the light emitting element layer and including at least one inorganic encapsulation layer and at least one organic encapsulation layer; a color conversion transmission layer on the encapsulation layer and configured to convert light emitted from the at least one light emitting element into light having a different color; a low refractive inorganic layer on the color conversion transmission layer and having a refractive index smaller than that of the color conversion transmission layer; and a color filter layer on a surface of the second substrate opposite to the first substrate.
According to some embodiments, the display device may further include a filler between the low refractive inorganic layer and the color filter layer and having a refractive index greater than that of the low refractive inorganic layer.
According to some embodiments, the refractive index of the low refractive inorganic layer may be greater than 1.2 and less than 1.4.
According to some embodiments, the low refractive inorganic layer may comprise silicon oxide.
According to some embodiments, the low refractive inorganic layer may have a thickness ofTo->
According to some embodiments, the difference between the refractive index of the color conversion transmissive layer and the refractive index of the low refractive inorganic layer may be at least 0.3.
According to some embodiments, the display device may further include a first passivation layer between the color conversion transmission layer and the filler, and the first passivation layer may have a refractive index greater than that of the low refractive inorganic layer.
According to some embodiments, the first passivation layer may be between the low refractive inorganic layer and the filler.
According to some embodiments, the first passivation layer may be between the color conversion transmissive layer and the low refractive inorganic layer.
According to some embodiments, the display device may further include a low refractive organic layer and a second passivation layer on a surface of the color filter layer opposite the color conversion transmission layer.
According to one or more embodiments, a display device includes: a first substrate; a second substrate opposite to the first substrate; a light emitting element layer on the first substrate and including at least one light emitting element; an encapsulation layer on the light emitting element layer and including at least one inorganic encapsulation layer and at least one organic encapsulation layer; a color conversion transmission layer on the encapsulation layer and configured to convert light emitted from the at least one light emitting element into light having a different color, the color conversion transmission layer including quantum dots; a low refractive inorganic layer on the color conversion transmission layer and having a refractive index smaller than that of the color conversion transmission layer; a color filter layer on a surface of the second substrate opposite to the first substrate; and a filler between the low refractive inorganic layer and the color filter layer and having a refractive index greater than that of the low refractive inorganic layer.
According to some embodiments, the refractive index of the low refractive inorganic layer may be greater than 1.2 and less than 1.4.
According to some embodiments, the low refractive inorganic layer may include silicon oxide (SiO 2 )。
According to some embodiments, the low refractive inorganic layer may have a thickness of aboutTo about->
According to some embodiments, the difference between the refractive index of the color conversion transmissive layer and the refractive index of the low refractive inorganic layer may be at least 0.3.
According to some embodiments, the display device may further include a first passivation layer between the color conversion transmissive layer and the filler, the first passivation layer having a refractive index greater than a refractive index of the low refractive inorganic layer.
According to some embodiments, the low refractive inorganic layer and the color conversion transmissive layer may be sequentially on the color conversion transmissive layer.
According to some embodiments, the color conversion transmissive layer and the low refractive inorganic layer may be sequentially on the color conversion transmissive layer.
According to some embodiments, the first passivation layer may include silicon oxynitride (SiON).
According to some embodiments, the refractive index of the filler may be about 1.45 to about 1.55, and the thickness of the filler may be about 1 μm to about 10 μm.
According to some embodiments, the encapsulation layer may include a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer sequentially arranged, and the color conversion transmission layer may directly contact the second inorganic encapsulation layer.
According to some embodiments, the display device may further include a low refractive organic layer and a second passivation layer on a surface of the color filter layer opposite the color conversion transmission layer.
According to some embodiments, the low refractive organic layer may include an organic material and porous particles dispersed in the organic material.
According to some embodiments, the low refractive inorganic layer may have an extinction coefficient that is less than an extinction coefficient of the low refractive organic layer.
According to some embodiments, the refractive index of the low refractive organic layer may be smaller than the refractive index of the low refractive inorganic layer.
According to some embodiments, the second passivation layer may comprise SiO 2 And may have a refractive index greater than that of the low refractive inorganic layer.
According to some embodiments, the color filter layer includes a first color filter configured to transmit light of a first color, a second color filter configured to transmit light of a second color, a third color filter configured to transmit light of a third color, and a light blocking portion dividing the first color filter, the second color filter, and the third color filter, and the light blocking portion may be formed by overlapping the first color layer, the second color layer, and the third color layer, which are disposed at the same layer as the first color filter, the second color filter, and the third color filter, respectively.
According to some embodiments, the light emitting element layer may include a first light emitting element, a second light emitting element, and a third light emitting element, and the color conversion transmission layer may include a first color converter, a second color converter, and a transmitter, the first color converter corresponding to the first light emitting element, the second color converter corresponding to the second light emitting element, the transmitter corresponding to the third light emitting element, and the color conversion transmission layer may further include a light blocking partition wall disposed between the first color converter, the second color converter, and the transmitter.
According to some embodiments, a top surface of each of the first color converter, the second color converter, and the transmitter may have a concave shape recessed with respect to a top surface of the light blocking partition wall, and the low refractive inorganic layer may include a groove formed according to the concave shape.
According to some embodiments, the first substrate and the second substrate may each comprise glass.
According to one or more embodiments, a display apparatus includes: a first substrate; a second substrate opposite to the first substrate; a light emitting element layer on the first substrate and including at least one light emitting element; an encapsulation layer on the light emitting element layer and including at least one inorganic encapsulation layer and at least one organic encapsulation layer; a color conversion transmission layer on the encapsulation layer and configured to convert light emitted from the at least one light emitting element into light having a different color, the color conversion transmission layer including quantum dots; a low refractive inorganic layer on the color conversion transmission layer and having a refractive index smaller than that of the color conversion transmission layer; and a color filter layer on a surface of the second substrate opposite to the first substrate and spaced apart from the low refractive inorganic layer, with an air gap between the color filter layer and the low refractive inorganic layer.
According to some embodiments, the refractive index of the low refractive inorganic layer may be greater than 1.2 and less than 1.4, and the thickness of the low refractive inorganic layer may be aboutTo about->
According to some embodiments, the difference between the refractive index of the color conversion transmissive layer and the refractive index of the low refractive inorganic layer may be at least 0.3.
According to some embodiments, the color filter layer may include a first color filter configured to transmit light of a first color, a second color filter configured to transmit light of a second color, a third color filter configured to transmit light of a third color, and a light blocking portion dividing the first color filter, the second color filter, and the third color filter, and in the light blocking portion, the first color layer, the second color layer, and the third color layer including the same material as the first color filter, the second color filter, and the third color filter, respectively, are stacked.
According to some embodiments, a top surface of each of the first color converter, the second color converter, and the transmitter may have a concave shape recessed with respect to a top surface of the light blocking partition wall, and the low refractive inorganic layer may include a groove formed according to the concave shape.
According to the present utility model, the display device includes the low refractive inorganic layer on the color conversion transmission layer, the low refractive inorganic layer having a refractive index smaller than that of the color conversion transmission layer, when light is incident on the low refractive inorganic layer through the high refractive color conversion transmission layer, reflection occurs at an interface between the low refractive inorganic layer and the color conversion transmission layer, and thus, light efficiency of the light can be improved.
Aspects, features, and characteristics other than those described will be apparent from the detailed description, claims, and drawings.
Drawings
The above and other aspects, features and characteristics of certain embodiments of the disclosure will become more apparent from the following description taken in conjunction with the accompanying drawings in which:
FIG. 1 is a schematic perspective view of a display device according to some embodiments;
FIG. 2A is a schematic cross-sectional view of a display device according to some embodiments;
fig. 2B is a schematic cross-sectional view of a pixel of a display device according to some embodiments;
FIG. 3 illustrates a color converter and a transmitter of the color conversion transmission layer illustrated in FIG. 2B;
fig. 4 is an equivalent circuit diagram of a light emitting element and a pixel circuit electrically connected to the light emitting element included in a display device according to some embodiments;
Fig. 5 and 6 are cross-sectional views for explaining a method of manufacturing a light emitting panel according to some embodiments;
fig. 7 to 9 are cross-sectional views for explaining a method of manufacturing a color filter panel according to some embodiments;
fig. 10A is a schematic cross-sectional view of a display device including the light emitting panel and the color filter panel shown in fig. 6 and 9, respectively, according to some embodiments;
FIG. 10B is a cross-sectional view of a portion of FIG. 10A to illustrate the principles of improvement in light efficiency;
FIG. 11 is a schematic cross-sectional view of a display device according to some embodiments;
FIG. 12A is a schematic cross-sectional view of a display device according to some embodiments;
FIG. 12B is a cross-sectional view of a portion of FIG. 12A to illustrate the principles of improvement in light efficiency;
FIG. 13 is a schematic cross-sectional view of a display device according to some embodiments; and
fig. 14 is a schematic cross-sectional view of a display device according to some embodiments.
Detailed Description
Reference will now be made in greater detail to aspects of some embodiments that are illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout. In this regard, the embodiments presented may take different forms and should not be construed as limited to the descriptions set forth herein. Accordingly, the embodiments are described below merely by referring to the drawings to explain aspects of the present description. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. Throughout this disclosure, the expression "at least one (seed/person)" of a, b and c indicates all of a alone, b alone, c alone, both a and b, both a and c, both b and c, a, b and c, or variants thereof.
As the disclosure is susceptible to various modifications and alternative embodiments, specific embodiments have been shown in the drawings and will be described in more detail below. The effects and characteristics of the disclosure and a method of achieving the same will be clearly understood with reference to the embodiments described in more detail with reference to the accompanying drawings. However, the disclosure is not limited to the embodiments disclosed hereinafter, and may be embodied in different forms.
Hereinafter, aspects of some embodiments will be described in more detail with reference to the drawings, and in the description with reference to the drawings, the same reference numerals will be given to the same components or corresponding components, and the same description thereof will be omitted.
In the following embodiments, terms such as first and second are used merely to distinguish one component from another component and are not meant to be limiting.
In the following embodiments, the expression used in the singular encompasses plural expressions unless it has a significantly different meaning in the context.
In the following embodiments, terms such as "comprising" or "including" indicate the presence of features or components disclosed in the specification, and are not intended to exclude the possibility that one or more other features or components may be added.
In the following embodiments, it will be understood that when an element such as a layer, film, region or plate is referred to as being "on" another element, it can be directly on the other element or intervening elements may be present therebetween. The dimensions of the components in the figures may be exaggerated or reduced for convenience of explanation. For example, the dimensions and thicknesses of components in the drawings are arbitrarily shown for convenience of explanation, and thus, the embodiments are not limited to the illustrations.
While embodiments may be implemented differently, the specific process sequence may be performed differently than as described. For example, two consecutively described processes may be performed substantially simultaneously or in reverse order of the order described.
In the following embodiments, when components such as layers, films, regions, and boards are mentioned to be connected to each other, the components may be directly connected to each other, or may be indirectly connected to each other with other components interposed. For example, when components are electrically connected to each other, the components may be directly connected to each other or may be indirectly connected to each other through other intervening components.
In the following examples, the x-axis, y-axis, and z-axis are not limited to three axes of a rectangular coordinate system, but may be interpreted in a broader sense. For example, the x-axis, y-axis, and z-axis may be perpendicular to each other, or may represent different directions that are not perpendicular to each other.
Fig. 1 is a schematic perspective view of a display device according to some embodiments.
Referring to fig. 1, the display device DV may include a display area DA and a non-display area NDA. The display device DV may display an image by a plurality of pixel arrangements two-dimensionally arranged on an x-y plane in the display area DA. The plurality of pixels includes a first pixel, a second pixel, and a third pixel. Hereinafter, for convenience of explanation, a case in which the first pixel includes the red pixel Pr, the second pixel includes the green pixel Pg, and the third pixel includes the blue pixel Pb will be described.
The non-display area NDA may surround at least a portion of the display area DA. According to some embodiments, the non-display area NDA may surround the entire portion of the display area DA. For example, the non-display area NDA may be located at the periphery of the display area DA (or outside of the coverage area). The non-display area NDA may include an area in which an image is not displayed. A driver or a main power line configured to supply an electric signal or power to the pixel circuit may be disposed in the non-display area NDA. The non-display area NDA may include a pad (or "bonding pad") area (i.e., an area to which an electronic device or a printed circuit board may be electrically connected).
Fig. 1 shows that the display area DA has a rectangular shape. However, the disclosure is not limited thereto. The display area DA may have various shapes, for example, a circular shape, an elliptical shape, a polygonal shape, or a shape of some figures. According to some embodiments, the display device DV may include a light emitting panel 1000 (see fig. 2B) and a color filter panel 2000 (see fig. 2B) separated from each other in a thickness direction (e.g., z-direction), and the filler 800 (see fig. 2) is between the light emitting panel 1000 and the color filter panel 2000.
Fig. 2A is a schematic cross-sectional view of a display device according to some embodiments, and fig. 2B is a schematic cross-sectional view of a pixel of the display device according to some embodiments.
Referring to fig. 2A, the display device DV may include a first substrate 100 and a second substrate 700 opposite to each other, and a light emitting element layer 300 including a plurality of light emitting elements and an encapsulation layer 400 encapsulating the light emitting element layer 300 may be located on the first substrate 100.
Referring to fig. 2B, the display device DV includes a light emitting panel 1000 and a color filter panel 2000 that are separated from each other, and a filler 800 is between the light emitting panel 1000 and the color filter panel 2000.
The light emitting panel 1000 may include a circuit layer 200, a light emitting element layer 300, an encapsulation layer 400, and a color conversion transmission layer 500 sequentially stacked on the first substrate 100. The circuit layer 200 may include a first pixel circuit PC1, a second pixel circuit PC2, and a third pixel circuit PC3, which may be electrically connected to the first light emitting element LED1, the second light emitting element LED2, and the third light emitting element LED3 of the light emitting element layer 300, respectively.
The first, second and third light emitting elements LED1, LED2 and LED3 may include organic light emitting diodes including organic materials. According to some embodiments, the first, second and third light emitting elements LED1, LED2, 3 may comprise inorganic light emitting diodes comprising inorganic materials. The inorganic light emitting diode may include a PN junction diode including an inorganic semiconductor-based material. When a voltage is applied to the PN junction diode in a positive direction, holes and electrons are injected into the PN junction diode, and energy generated by recombination of the holes and electrons may be converted into light energy to emit light having a specific color. The inorganic light emitting diode may have a width of about several micrometers to several hundred micrometers or several nanometers to several hundred nanometers. In some embodiments, the first, second and third light emitting elements LED1, LED2, 3 may comprise light emitting diodes comprising quantum dots. As described above, the emission layers of the first, second, and third light emitting elements LED1, LED2, and LED3 may include organic materials, inorganic materials, quantum dots, organic materials, and quantum dots, or inorganic materials, and quantum dots.
The first, second, and third light emitting elements LED1, LED2, and LED3 may emit light having the same color. For example, light (e.g., blue light Lb) emitted from the first, second, and third light emitting elements LED1, LED2, and LED3 may be transmitted through the encapsulation layer 400 on the light emitting element layer 300 and incident on the color conversion transmission layer 500.
The color conversion transmissive layer 500 may be positioned on the encapsulation layer 400 to directly contact the encapsulation layer 400. The color conversion transmission layer 500 may include a color converter configured to convert light (e.g., blue light Lb) into light having a different color and a transmitter configured to transmit light (e.g., blue light Lb) emitted from the light emitting element layer 300 without color conversion. For example, the color conversion transmission layer 500 may include a first color converter 510 corresponding to the red pixel Pr, a second color converter 520 corresponding to the green pixel Pg, and a transmitter 530 corresponding to the blue pixel Pb. The first color converter 510 may convert the blue light Lb into the red light Lr, and the second color converter 520 may convert the blue light Lb into the green light Lg. The transmitter 530 may transmit the blue light Lb without conversion.
According to some embodiments, the color conversion transmissive layer 500 may be formed over the first substrate 100, not over the second substrate 700. With this configuration, the distance between the first light emitting element LED1, the second light emitting element LED2, and the third light emitting element LED3 can be reduced, and the light loss in the path can be reduced as much as possible to improve the light efficiency.
The color filter panel 2000 may include a color filter layer 600 on a surface of the second substrate 700 facing the first substrate 100. The color filter layer 600 may be disposed opposite the color conversion transmission layer 500 with the filler 800 between the color filter layer 600 and the color conversion transmission layer 500. The color filter layer 600 may include first, second and third color filters 610, 620 and 630 having different colors, respectively. For example, the first, second, and third color filters 610, 620, and 630 may include color filters configured to transmit red light Lr, green light Lg, and blue light Lb, respectively.
The color purity of the light color-converted and transmitted by the color conversion transmission layer 500 may be improved by the first, second, and third color filters 610, 620, and 630. In addition, the color filter layer 600 may prevent or minimize external light (e.g., light incident on the display device DV from outside the display device DV) from being reflected to be recognized by a user.
The filler 800 may be located between the color conversion transmission layer 500 and the color filter layer 600. The filler 800 may bond the light emitting panel 1000 (see fig. 2B) and the color filter panel 2000 (see fig. 2B) through the sealant 10 (see fig. 2A), and may fill a space between the light emitting panel 1000 and the color filter panel 2000. The filler 800 may include a light transmissive material, for example, an acryl resin or an epoxy resin. According to some embodiments, the refractive index of the filler 800 may be about 1.45 to about 1.55.
According to some embodiments, a low refractive inorganic layer 910 may be located on the color conversion transmissive layer 500. That is, the low refractive inorganic layer 910 may be located between the color conversion transmission layer 500 and the filler 800.
The low refractive inorganic layer 910 may have a refractive index greater than 1.2 and less than 1.4, and may include, for example, silicon oxide (SiO 2 ). Although the refractive index of silicon oxide is typically smaller than other inorganic layers, the refractive index of silicon oxide is about 1.45 to about 1.5. According to some embodiments, the low refractive inorganic layer 910 having a refractive index greater than 1.2 and less than 1.4 may be formed by a process strip that may be low, particularly at the refractive indexAnd forming silicon oxide under the piece. The function of the low refractive inorganic layer 910 will be described later.
The display device DV having the above-described structure may include various devices such as a smart phone, a tablet computer, a portable computer, a television, or a billboard.
Fig. 3 shows a color converter and a transmitter of the color conversion transmission layer shown in fig. 2B.
Referring to fig. 3, the first color converter 510 may convert blue light Lb incident on the first color converter 510 into red light Lr. The first color converter 510 may include a first photopolymer 511 and first quantum dots 512 and first scattering particles 513 dispersed in the first photopolymer 511.
The first quantum dot 512 may be excited by the blue light Lb to emit red light Lr having a wavelength greater than that of the blue light Lb. The first photopolymer 511 may include an organic material having light transmittance.
The first scattering particles 513 may scatter the blue light Lb not absorbed by the first quantum dots 512 to excite more first quantum dots 512, thereby improving the efficiency of color conversion. The first scattering particles 513 may include, for example, titanium dioxide (TiO 2 ) Particles or metal particles. The first quantum dot 512 may be selected from group II-VI compounds, group III-V compounds, group IV-VI compounds, group IV elements, group IV compounds, and combinations thereof.
The group II-VI compound may be selected from the group consisting of binary compounds selected from the group consisting of CdSe, cdTe, znS, znSe, znTe, znO, hgS, hgSe, hgTe, mgSe, mgS and combinations thereof, ternary compounds selected from the group consisting of CdSeS, cdSeTe, cdSTe, znSeS, znSeTe, znSTe, hgSeS, hgSeTe, hgSTe, cdZnS, cdZnSe, cdZnTe, cdHgS, cdHgSe, cdHgTe, hgZnS, hgZnSe, hgZnTe, mgZnSe, mgZnS and combinations thereof, and quaternary compounds selected from the group consisting of HgZnTeS, cdZnSeS, cdZnSeTe, cdZnSTe, cdHgSeS, cdHgSeTe, cdHgSTe, hgZnSeS, hgZnSeTe and combinations thereof.
The III-VI compounds may include binary compounds (such as In 2 S 3 、In 2 Se 3 ) Ternary compounds (such as InGaS 3 、InGaSe 3 ) And any combination thereof.
The III-V compounds may be selected from the group consisting of binary compounds selected from the group consisting of GaN, gaP, gaAs, gaSb, alN, alP, alAs, alSb, inN, inP, inAs, inSb and combinations thereof, ternary compounds selected from the group consisting of GaNP, gaNAs, gaNSb, gaPAs, gaPSb, alNP, alNAs, alNSb, alPAs, alPSb, inNP, inAlP, inNAs, inNSb, inPAs, inPSb and combinations thereof, and quaternary compounds selected from the group consisting of GaAlNP, gaAlNAs, gaAlNSb, gaAlPAs, gaAlPSb, gaInNP, gaInNAs, gaInNSb, gaInPAs, gaInPSb, inAlNP, inAlNAs, inAlNSb, inAlPAs, inAlPSb and combinations thereof. The III-V compounds may also include a group II metal (e.g., inZnP).
The IV-VI compound may be selected from the group consisting of binary compounds selected from the group consisting of SnS, snSe, snTe, pbS, pbSe, pbTe and combinations thereof, ternary compounds selected from the group consisting of SnSeS, snSeTe, snSTe, pbSeS, pbSeTe, pbSTe, snPbS, snPbSe, snPbTe and combinations thereof, and quaternary compounds selected from the group consisting of SnPbSSe, snPbSeTe, snPbSTe and combinations thereof. The group IV element may be selected from the group consisting of Si, ge, and combinations thereof. The group IV compound may include a binary compound selected from the group consisting of SiC, siGe, and combinations thereof.
The second color converter 520 may convert blue light Lb incident on the second color converter 520 into green light Lg. The second color converter 520 may include a second photopolymer 521 and second quantum dots 522 and second scattering particles 523 dispersed in the second photopolymer 521.
The second quantum dot 522 may be excited by the blue light Lb to emit green light Lg having a wavelength greater than that of the blue light Lb. The second photopolymer 521 may include an organic material having light transmissivity.
The second scattering particles 523 may scatter the blue light Lb not absorbed by the second quantum dots 522 to excite more second quantum dots 522, thereby improving the efficiency of color conversion. The second scattering particles 523 may include, for example, titanium dioxide (TiO 2 ) Particles or metal particles. The second quantum dot 522 may be selected from group II-VI compounds, group III-V compounds, group IV-VI compounds, group IV elements, group IV compounds, and combinations thereof.
In some embodiments, the first quantum dot 512 and the second quantum dot 522 may comprise the same material. In this case, the size of the first quantum dot 512 may be larger than the size of the second quantum dot 522.
The transmitter 530 may transmit the blue light Lb incident to the transmitter 530 without conversion. The transmitter 530 may include a third photopolymer 531 having third scattering particles 533 dispersed therein. The third photopolymer 531 may include, for example, an organic material having light transmittance (such as silicone and epoxy), and may include the same material as that of the first photopolymer 511 and the second photopolymer 521. The third scattering particles 533 may scatter and emit the blue light Lb, and may include the same material as that of the first scattering particles 513 and the second scattering particles 523.
Fig. 4 is an equivalent circuit diagram of a light emitting element and a pixel circuit electrically connected to the light emitting element included in a display device according to some embodiments.
Referring to fig. 4, a pixel electrode (e.g., anode) of the light emitting element LED is electrically connected to the pixel circuit PC, and a counter electrode (e.g., cathode) of the light emitting element LED may be connected to a common voltage line VSL configured to supply a common power supply voltage ELVSS. The light emitting element LED may emit light at a luminance corresponding to the amount of current supplied from the pixel circuit PC.
The light emitting element LED shown in fig. 4 may correspond to each of the first, second, and third light emitting elements LED1, LED2, and LED3 shown in fig. 2B, and the pixel circuit PC shown in fig. 4 may correspond to each of the first, second, and third pixel circuits PC1, PC2, and PX3 shown in fig. 2B.
The pixel circuit PC may control an amount of current flowing from the driving power supply voltage ELVDD to the common power supply voltage ELVSS via the light emitting element LED in response to the data signal. The pixel circuit PC may include a first transistor M1, a second transistor M2, a third transistor M3, and a storage capacitor Cst.
Each of the first transistor M1, the second transistor M2, and the third transistor M3 may include an oxide semiconductor thin film transistor including a semiconductor layer including an oxide semiconductor, or may include a silicon semiconductor thin film transistor including a semiconductor layer including polycrystalline silicon. The transistor may include a first electrode and a second electrode. The first electrode may include one of a source electrode and a drain electrode, and the second electrode may include the other of the source electrode and the drain electrode, depending on the type of the transistor.
The first transistor M1 may include a driving transistor. The first electrode of the first transistor M1 is electrically connected to a driving voltage line VDL configured to supply a driving power supply voltage ELVDD, and the second electrode may be electrically connected to a pixel electrode of the light emitting element LED. The gate electrode of the first transistor M1 may be electrically connected to the first node N1. The first transistor M1 may control an amount of current flowing from the driving power supply voltage ELVDD to the light emitting element LED in response to the voltage of the first node N1.
The second transistor M2 may include a switching transistor. The first electrode of the second transistor M2 may be electrically connected to the data line DL, and the second electrode may be electrically connected to the first node N1. The gate electrode of the second transistor M2 may be electrically connected to the scan line SL. The second transistor M2 may be turned on when a scan signal is supplied to the scan line SL to electrically connect the data line DL with the first node N1.
The third transistor M3 may include an initialization transistor and/or a sensing transistor. The first electrode of the third transistor M3 may be electrically connected to the second node N2, and the second electrode may be connected to the sensing line SEL. The gate electrode of the third transistor M3 may be electrically connected to the control line CL.
The third transistor M3 may be turned on when a control signal is supplied to the control line CL to electrically connect the sensing line SEL with the second node N2. In some embodiments, the third transistor M3 may be turned on in response to a signal received through the control line CL, and an initialization voltage may be transmitted from the sensing line SEL to the light emitting element LED to initialize the pixel electrode. In some embodiments, the third transistor M3 may be turned on when a control signal is supplied to the control line CL to sense characteristic information of the first transistor M1. The third transistor M3 may have any one or both of the above-described function as an initialization transistor and the function as a sense transistor. In some embodiments, when the third transistor M3 has a function as an initialization transistor, the sensing line SEL may be named as an initialization voltage line. The initialization operation and the sensing operation of the third transistor M3 may be performed separately or may be performed simultaneously.
The storage capacitor Cst may be connected between the first node N1 and the second node N2. For example, a first capacitor electrode of the storage capacitor Cst may be electrically connected to the gate electrode of the first transistor M1, and a second capacitor of the storage capacitor Cst may be electrically connected to the pixel electrode of the light emitting element LED.
Although fig. 4 shows that the first, second and third transistors M1, M2 and M3 include N-type metal oxide semiconductors (NMOS), in other embodiments, at least one of the first, second and third transistors M1, M2 and M3 may include P-type metal oxide semiconductors (PMOS).
Although fig. 4 shows three transistors, in other embodiments, the pixel circuit PC may include four or more transistors.
Fig. 5 and 6 are cross-sectional views of methods of manufacturing a light emitting panel according to some embodiments. Hereinafter, a case in which the light emitting element includes an organic light emitting element is described.
Referring to fig. 5, a first pixel circuit PC1, a second pixel circuit PC2, and a third pixel circuit PC3 are formed on a first substrate 100. The first substrate 100 may include a substrate having SiO 2 A glass substrate as a main component. The glass substrate may include, for example, a glass substrate having a thickness of about 500 μm, or may include an ultrathin glass substrate having a thickness of about 30 μm. According to some embodiments, the first substrate 100 may include a polymer resin. The first substrate 100 including the polymeric resin may be flexible, foldable, crimpable, or bendable. According to one of In some embodiments, the first substrate 100 may have a multi-layered structure including an organic layer and an inorganic layer, the organic layer including a polymer resin.
As described above with reference to fig. 4, each of the first, second, and third pixel circuits PC1, PC2, and PC3 includes the first, second, third, and storage transistors M1, M2, M3, and Cst. In this regard, fig. 5 shows the storage capacitor Cst and the transistor TR as any one of the first transistor M1, the second transistor M2, and the third transistor M3.
According to some embodiments, the storage capacitor Cst may include a first capacitor electrode CE1 and a second capacitor electrode CE2, and the second capacitor electrode CE2 may include a first sub-capacitor electrode CE2b and a second sub-capacitor electrode CE2t formed below and above the first capacitor electrode CE1, respectively.
The first sub-capacitor electrode CE2b may be directly formed on the first substrate 100. For example, the first sub-capacitor electrode CE2b may directly contact the top surface of the first substrate 100. The first sub-capacitor electrode CE2b may include a conductive material such as aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and/or copper (Cu). According to some embodiments, the driving voltage line VDL, the common voltage line VSL, and/or the data line DL may be formed together with the first sub-capacitor electrode CE2b in the same process.
Next, a buffer layer 201 may be formed. The buffer layer 201 may be positioned on the first sub-capacitor electrode CE2b, and may include an inorganic insulating material. The buffer layer 201 may include an inorganic insulating material such as silicon nitride, silicon oxide, and/or silicon oxynitride, and may include a single-layer structure or a multi-layer structure including the above materials.
Next, a semiconductor layer Act of the transistor TR may be formed. The semiconductor layer Act may include an oxide semiconductor material such as IGZO, amorphous silicon, polycrystalline silicon, or an organic semiconductor material.
The gate insulating layer 203 may be formed on the semiconductor layer Act. The gate insulating layer 203 may include an inorganic insulating material such as silicon nitride, silicon oxynitride, and may include a single-layer structure or a multi-layer structure including the above materials.
The gate electrode GE may be formed on the gate insulating layer 203 and overlap with a portion of the semiconductor layer Act. The gate electrode GE may overlap a channel region CR of the semiconductor layer Act, which may include the channel region CR and source and drain regions SR and DR disposed at both sides of the channel region CR, respectively.
The first capacitor electrode CE1 may be formed at the same layer as the gate electrode GE and include the same material as the gate electrode GE. The first capacitor electrode CE1 and the gate electrode GE may be formed through the same process. The first capacitor electrode CE1 and the gate electrode GE may include conductive metals such as Al, pt, pd, ag, mg, au, ni, nd, ir, cr, ni, ca, mo, ti, W and/or Cu. According to some embodiments, both the first capacitor electrode CE1 and the gate electrode GE may have a multi-layer structure including Mo/Al/Mo. According to some embodiments, the first capacitor electrode CE1 and the gate electrode GE may include TiN x A layer, an Al layer and/or a Ti layer.
An interlayer insulating layer 204 may be formed on the first capacitor electrode CE1 and the gate electrode GE. The interlayer insulating layer 204 may include an inorganic insulating material such as silicon nitride, silicon oxide, and/or silicon oxynitride, and may include a single-layer structure or a multi-layer structure including the above materials.
The second sub-capacitor electrode CE2t may be formed on the interlayer insulating layer 204. The second sub-capacitor electrode CE2t may be electrically connected to the first sub-capacitor electrode CE2b via a contact hole in the insulating layer between the first sub-capacitor electrode CE2b and the second sub-capacitor electrode CE2 t. For example, the second sub-capacitor electrode CE2t may contact the first sub-capacitor electrode CE2b via a contact hole through the buffer layer 201, the gate insulating layer 203, and the interlayer insulating layer 204. The second sub-capacitor electrode CE2t may include, for example, a Ti layer, an Al layer, and/or a Cu layer. According to some embodiments, the second sub-capacitor electrode CE2t may comprise a multilayer structure comprising Ti/Al/Ti.
The via insulating layer 205 may be formed on the first, second, and third pixel circuits PC1, PC2, and PC 3. The via insulating layer 205 may include an inorganic insulating material and/or an organic insulating material. For example, the via insulating layer 205 may include an organic insulating material such as acryl, benzocyclobutene (BCB), polyimide, or Hexamethyldisiloxane (HMDSO). The via insulating layer 205 may be formed as a single layer or multiple layers.
Each of the first, second, and third pixel circuits PC1, PC2, and PC3 on the first substrate 100 may include the transistor TR and the storage capacitor Cst having the above-described structure, and may be electrically connected to the pixel electrode 310 of the corresponding light emitting element.
The pixel electrode 310 may be disposed apart from each other in a plurality of emission regions (i.e., a first emission region EA1, a second emission region EA2, and a third emission region EA 3) (see fig. 6) on the via insulating layer 205. The pixel electrode 310 may include a reflective film including Ag, mg, al, pt, pd, au, ni, nd, ir, cr or a compound or mixture thereof. The pixel electrode 310 may include a reflective film including the above-described materials and a transparent conductive film located above and/or below the reflective film. The transparent conductive film may include Indium Tin Oxide (ITO), indium Zinc Oxide (IZO), zinc oxide (ZnO), indium oxide (In) 2 O 3 ) Indium Gallium Oxide (IGO), aluminum Zinc Oxide (AZO), and the like. According to some embodiments, the pixel electrode 310 may have a three-layer structure including ITO/Ag/ITO.
The bank layer 207 may include openings overlapping the pixel electrodes 310 of the first, second, and third light emitting elements LED1, LED2, and LED 3. The bank layer 207 may cover an edge of the pixel electrode 310 and expose a central portion of the pixel electrode 310 through the opening. The opening of the bank layer 207 may define a first emission area EA1 of the first light emitting element LED1, a second emission area EA2 of the second light emitting element LED2, and a third emission area EA3 of the third light emitting element LED3 (see fig. 6).
The bank layer 207 may include an organic insulating material. For example, the bank layer 207 may include an organic insulating material such as acryl, BCB, polyimide, or HMDSO.
The intermediate layer 320 may be formed on the bank layer 207 and may include an emission layer. The intermediate layer 320 may be integrally formed across the first, second, and third emission areas EA1, EA2, and EA 3. However, the intermediate layer 320 may be patterned to correspond to the first, second, and third emission areas EA1, EA2, and EA3, as needed. The intermediate layer 320 may include a hole injection layer, a hole transport layer, an electron transport layer, and/or an electron injection layer, as desired, in addition to the emission layer. The emission layer included in the intermediate layer 320 may emit light having a wavelength band including a dominant wavelength of about 450nm to about 495 nm.
The counter electrode 330 may be formed on the intermediate layer 320 to cover the entire portion of the display area DA of the first substrate 100. Counter electrode 330 may comprise a semi-transmissive electrode or a transmissive electrode. The counter electrode 330 may comprise a semi-transmissive electrode comprising an ultra-thin film metal including Mg, ag, al, pt, pd, au, ni, nd, ir, cr or a compound or mixture thereof. For example, the counter electrode 330 may include a semi-transmissive electrode including a MgAg layer, a Yb layer/MgAg layer, or a Li layer/MgAg layer having a small thickness. According to some embodiments, the counter electrode 330 may include, for example, ITO, IZO, znO, in 2 O 3 Transparent conductive oxide of IGO or AZO.
The pixel electrode 310, the intermediate layer 320, and the counter electrode 330 stacked through the opening of the bank layer 207 form a light emitting element configured to emit blue light. The light emitting elements are arranged separately from each other, and in this connection, fig. 5 shows a first light emitting element LED1, a second light emitting element LED2 and a third light emitting element LED3. The opening of the bank layer 207 may define an emission region of the light emitting element. For example, an opening of the bank layer 207 corresponding to the first light emitting element LED1 may define a first emission area EA1, an opening of the bank layer 207 corresponding to the second light emitting element LED2 may define a second emission area EA2, and an opening of the bank layer 207 corresponding to the third light emitting element LED3 may define a third emission area EA3.
According to some embodiments, the display device DV includes an encapsulation layer 400 formed on the first light emitting element LED1, the second light emitting element LED2, and the third light emitting element LED3. The encapsulation layer 400 may include at least one inorganic encapsulation layer and at least one organic encapsulation layer. According to some embodiments, the encapsulation layer 400 may include a first inorganic encapsulation layer 410, a second inorganic encapsulation layer 430, and an organic encapsulation layer 420 between the first inorganic encapsulation layer 410 and the second inorganic encapsulation layer 430.
The first inorganic encapsulation layer 410 and the second inorganic encapsulation layer 430 may each include at least one inorganic insulating material. The inorganic insulating material may include, for example, silicon dioxide (SiO 2 ) Silicon nitride (SiN) x ) Silicon oxynitride (SiO) x N y ) Alumina (Al) 2 O 3 ) Titanium oxide (TiO) 2 ) Tantalum oxide (Ta) 2 O 5 ) Hafnium oxide (HfO) 2 ) Or zinc oxide (ZnO) x ) And may be formed by Chemical Vapor Deposition (CVD) or the like. Zinc oxide (ZnO) x ) May be ZnO and/or ZnO 2 。
The organic encapsulation layer 420 may include a polymer-based material. The polymer-based material may include acrylic, epoxy, polyimide, polyethylene, and the like. For example, the organic encapsulation layer 420 may include an acrylic resin, polymethyl methacrylate, polyacrylate, or the like. The organic encapsulation layer 420 may be formed by curing a monomer or coating a polymer.
Since the thickness of the first inorganic encapsulation layer 410 formed by CVD is approximately uniform, the top surface of the first inorganic encapsulation layer 410 is uneven. However, the top surface of the organic encapsulation layer 420 is approximately flat, and thus, the top surface of the second inorganic encapsulation layer 430 on the organic encapsulation layer 420 may also be approximately flat.
Referring to fig. 6, a light blocking partition wall 540 may be formed on the encapsulation layer 400. The light blocking partition wall 540 may surround the emission areas (i.e., the first, second, and third emission areas EA1, EA2, and EA 3), and in a plane (in the x-y plane), the light blocking partition wall 540 may have a mesh structure.
The light blocking partition wall 540 may include a colored insulating material. For example, the light blocking partition wall 540 may include a Polyimide (PI) -based adhesive and a pigment obtained by a combination of red, blue, and green. Alternatively, the light blocking partition wall 540 may include a card-poly (cardo) type binder resin and a combination of a lactam black pigment and a blue pigment. Alternatively, the light blocking partition wall 54 may include carbon black. The light blocking partition wall 54 may include openings corresponding to the first, second, and third emission areas EA1, EA2, and EA 3.
The light blocking partition wall 540 may prevent or reduce a case where light converted and scattered by the first color converter 510 and the second color converter 520, which will be described later, moves to another area. In addition, the light blocking partition wall 540 may prevent or reduce reflection of external light together with a color filter to be described later, thereby improving contrast of the display device DV.
After the light blocking partition wall 540 is formed, the first color converter 510, the second color converter 520, and the transmitter 530 are formed. The materials included in the first color converter 510, the second color converter 520, and the transmitter 530 are the same as described above with reference to fig. 3. The first color converter 510, the second color converter 520, and the transmitter 530 may be formed in an inkjet method. The first and second quantum dots 512 and 522 included in the first and second color converters 510 and 520, respectively, may indicate crystals of the semiconductor compound, and may include any material capable of emitting light having various emission wavelengths according to crystal sizes. The diameter of the quantum dots may be, for example, from about 1nm to about 10nm.
According to some embodiments, each of the first color converter 510, the second color converter 520, the transmitter 530, and the light blocking partition wall 540 may contact the second inorganic encapsulation layer 430 of the encapsulation layer 400.
The low refractive inorganic layer 910 and the first passivation layer 920 may be sequentially disposed on the color conversion transmission layer 500 (see fig. 2B). According to some embodiments, the low refractive inorganic layer 910 may include a low refractive index inorganic material having a refractive index greater than 1.2 and less than 1.4. Typically, silicon oxide (SiO 2 ) Has a refractive index of 1.45 to 1.5 relatively smaller than that of silicon nitride, silicon oxynitride, or the like. The low refractive inorganic layer according to the embodiment is formed by CVD, and the silicon oxide film having a refractive index smaller than 1.4 may be formed by changing the amount of material or the deposition conditions during the deposition process. The low refractive inorganic layer 910 formed by CVD may include an inorganic material only and notThere is an inorganic layer of organic material.
According to some embodiments, the first color converter 510, the second color converter 520, and the transmitter 530 may have a refractive index of about 1.7 to about 1.8. Referring to fig. 3, the first, second and third photosensitive polymers 511, 521 and 531 may include an organic material having a refractive index of about 1.5 to about 1.6, and when quantum dots or scattering particles are dispersed in the organic material, the first, second and transmitter 510, 520 and 530 have a refractive index of about 1.7 to about 1.8, which is greater than the refractive index of the organic material included in the first, second and third photosensitive polymers 511, 521 and 531. For example, the difference between the refractive index of each of the first color converter 510, the second color converter 520, and the transmitter 530 and the low refractive inorganic layer 910 may be 0.3 or more.
Finally, when light is incident on the low refractive inorganic layer 910 through each of the high refractive first color converter 510, the second color converter 520, and the transmitter 530, reflection may occur at an interface between the above components. In addition, light incident to the low refractive inorganic layer 910 at least at an angle may be totally reflected, wherein a range in which the total reflection occurs may increase as a difference between refractive indexes increases. Due to the low refractive index of the low refractive inorganic layer 910, the reflectivity of light at the surface of the low refractive inorganic layer 910 may have a large value. The reflected light may be converted or scattered by the first color converter 510, the second color converter 520, and the transmitter 530 and may be extracted to the outside again, and thus, light efficiency of the light may be improved.
According to some embodiments, the thickness of the low refractive inorganic layer 910 may be aboutTo about->
The first passivation layer 920 may be positioned on the low refractive inorganic layer 910, and the first passivation layer 920 may have a lower refractive inorganic layer 910 than the low refractive inorganic layer 910Refractive index is large. For example, the first passivation layer 920 may include SiON having a refractive index of about 1.6. According to some embodiments, the first passivation layer 920 may include SiO having a refractive index greater than that of the low refractive inorganic layer 910 2 . The first passivation layer 920 may have aboutTo about->But is not limited thereto.
According to some embodiments, the first color converter 510, the second color converter 520, the transmitter 530, and the light blocking partition wall 540 may include an organic material, and the color conversion transmission layer 500 (see fig. 2B) may be covered with the first passivation layer 920 to prevent or reduce penetration of foreign substances into the organic material, or the like. Since the low refractive inorganic layer 910 has a low refractive index, the penetration protecting function of the low refractive inorganic layer 910 is not too strong, and thus, the first passivation layer 920 may be additionally disposed together with the low refractive inorganic layer 910 for improving light efficiency.
Fig. 7 to 9 are cross-sectional views of methods of manufacturing a color filter panel according to some embodiments.
Referring to fig. 7, a second substrate 700 is provided, and a third color filter 630 configured to transmit light of a third color and a third color layer 630P are formed on the second substrate 700. A portion of the third color layer 630P may be integrally formed with the third color filter 630, and another portion of the third color layer 630P may be formed separately from the third color filter 630. The second substrate 700 may include a material having SiO 2 A glass substrate as a main component. According to some embodiments, the second substrate 700 may include a polymer resin. Referring to fig. 10A, after the light emitting panel and the color filter panel are bonded, the third color filter 630 may overlap the third emission area EA3, and the third color layer 630P may overlap the light blocking partition wall 540.
Referring to fig. 8, after forming the third color filter 630 and the third color layer 630P, the first color filter 610 and the first color layer 610P configured to emit light of the first color may be formed on the second substrate 700. A portion of the first color layer 610P may be integrally formed with the first color filter 610, and another portion of the first color layer 610P may be formed separately from the first color filter 610. Referring to fig. 10A, the first color filter 610 may overlap the first emission area EA1, and the first color layer 610P may overlap the light blocking partition wall 540. In the region of the second substrate 700 overlapping the light blocking partition wall 540, the third color layer 630P may overlap the first color layer 610P.
Referring to fig. 9, after forming the first color filter 610 and the first color layer 610P, a second color filter 620 and a second color layer 620P configured to transmit light of a second color may be formed on the second substrate 700. A portion of the second color layer 620P may be integrally formed with the second color filter 620, and another portion of the second color layer 620P may be formed separately from the second color filter 620. Referring to fig. 10A, the second color filter 620 may overlap the second emission area EA2, and the second color layer 620P may overlap the light blocking partition wall 540. In the region of the second substrate 700 overlapping the light blocking partition wall 540, the third color layer 630P, the first color layer 610P, and the second color layer 620P may be formed in an overlapping manner.
According to some embodiments, the first color, the second color, and the third color may include red, green, and blue, respectively.
For example, since the first color layer 610P of red, the second color layer 620P of green, and the third color layer 630P of blue are arranged in a stacked manner in a region of the second substrate 700 which is stacked with the light blocking partition wall 540, it is possible to realize the light blocking portion 600P dividing the first, second, and third color filters 610, 620, and 630. With this configuration, the light blocking portion 600P may be formed between the color filters when the first, second, and third color filters 610, 620, and 630 are formed, without forming an additional layer such as a black matrix having a light blocking function.
Although an embodiment in which the third color filter 630, the first color filter 610, and the second color filter 620 are sequentially formed on the second substrate 700 with reference to fig. 6 to 9 is described, the first color filter 610, the second color filter 620, and the third color filter 630 may be formed in any order.
Fig. 10A is a schematic cross-sectional view of a display device formed by joining the color filter panel and the light emitting panel shown in fig. 6 and 9, respectively, according to some embodiments; fig. 10B is a cross-sectional view of a portion of fig. 10A to describe the principle of improvement of light efficiency.
Referring to fig. 2A, 2B, and 10A, the light emitting panel 1000 shown in fig. 6 and the color filter panel 2000 shown in fig. 9 are joined by using the sealant 10. Bonding the light emitting panel 1000 including the first substrate 100 and the color filter panel 2000 including the second substrate 700 using the sealant 10 does not necessarily indicate that the sealant 10 directly contacts each of the first substrate 100 and the second substrate 700.
After the light emitting panel 1000 and the color filter panel 2000 are joined, a space between the light emitting panel 1000 and the color filter panel 2000 is filled with a filler 800. For example, the filler 800 may be filled in a space between the low refractive inorganic layer 910 and the color filter layer 600 on the color conversion transmission layer 500. According to some embodiments, the first passivation layer 920 may be positioned between the low refractive inorganic layer 910 and the color filter layer 600 or between the low refractive inorganic layer 910 and the filler 800. The filler 800 may include a resin such as acryl or epoxy. The thickness of the filler 800 may be about 1 μm to about 10 μm, and the refractive index of the filler 800 may be about 1.45 to about 1.55.
When the thickness of the filler 800 is less than 1 μm, it may be difficult to planarize the light emitting panel 1000 and the color filter panel 2000, and when the thickness of the filler 800 is more than 10 μm, the thickness of the display device DV may excessively increase.
Referring to fig. 10B, light emitted from the first, second, and third light emitting elements LED1, LED2, and LED3 (see fig. 2B) and color-converted and/or scattered by the first, second, and transmitter 510, 520, and 530 may be reflected from the surface of the low refractive inorganic layer 910. The first color converter 510, the second color converter 520, and the transmitter 530 may have a refractive index relatively larger than that of the low refractive inorganic layer 910, and light incident from the high refractive layer to the low refractive layer may be reflected from an interface between the high refractive layer and the low refractive layer. The reflectivity may be increased according to an increase in the difference between the refractive indexes, and the difference between the refractive indexes of the low refractive inorganic layer 910 and each of the first color converter 510, the second color converter 520, and the transmitter 530 may be about 0.3 or more.
The reflected light may re-enter the first color converter 510, the second color converter 520, and the transmitter 530, and may be color converted and/or scattered. The probability that light reflected from the surface of the low refractive inorganic layer 910 without color conversion will be re-incident on the first color converter 510, the second color converter 520, and the transmitter 530 and undergo color conversion by quantum dots may be very high.
According to some embodiments, a low refractive inorganic layer 910 may be positioned on the color conversion transmission layer 500 to improve light efficiency. In this case, the low refractive inorganic layer 910 may include an inorganic layer including silicon oxide or the like formed by CVD instead of an organic material, and manufacturing cost may be significantly reduced as compared with a case where a low refractive organic layer is used.
Further, since the low refractive inorganic layer 910 is located on the light emitting panel 1000 instead of the color filter panel 2000, the distance between the color conversion transmission layer 500 and the low refractive inorganic layer 910 may be reduced as much as possible, and according to the reduction of the distance, the light loss in the path is reduced, and the light efficiency may be further improved.
According to some embodiments, the low refractive inorganic layer 910 may have a lower extinction coefficient (k) than a low refractive organic layer having a substantially similar refractive index. For example, the extinction coefficient of the low refractive inorganic layer 910 may be close to zero. When the extinction coefficient is small, the light absorption of the material itself decreases. Therefore, when the low refractive inorganic layer 910 is used, light loss due to absorption can be reduced as compared to the organic layer.
Fig. 11 is a schematic cross-sectional view of a display device according to some embodiments. Hereinafter, differences between the display device shown in fig. 11 and the display device according to the embodiment shown in fig. 10A will be mainly described.
Referring to fig. 2B and 11, the display device includes: a first substrate 100; a second substrate 700 opposite to the first substrate 100; a light emitting element layer 300 on the first substrate 100 and including at least one of a first light emitting element LED1, a second light emitting element LED2, and a third light emitting element LED 3; an encapsulation layer 400 on the light emitting element layer 300 and including at least one of inorganic encapsulation layers 410 and 430 (i.e., a first inorganic encapsulation layer 410 and a second inorganic encapsulation layer 430) and at least one organic encapsulation layer 420; a color conversion transmission layer 500 on the encapsulation layer 400 and configured to convert light emitted from at least one of the first, second, and third light emitting elements LED1, LED2, and LED3 into light having a different color, the color conversion transmission layer 500 including quantum dots; a low refractive inorganic layer 910 positioned on the color conversion transmission layer 500 and having a refractive index smaller than that of the color conversion transmission layer 500; a color filter layer 600 on a surface of the second substrate 700 opposite to the first substrate 100; and a filler 800 located between the low refractive inorganic layer 910 and the color filter layer 600 and having a refractive index greater than that of the low refractive inorganic layer 910.
According to some embodiments, the display device may further include a first passivation layer 920, and the first passivation layer 920 may be located between the color conversion transmission layer 500 and the low refractive inorganic layer 910.
The first passivation layer 920 may have a refractive index greater than that of the low refractive inorganic layer 910. For example, the first passivation layer 920 may include SiON having a refractive index of about 1.6. According to some embodiments, the first passivation layer 920 may include SiO having a refractive index greater than that of the low refractive inorganic layer 910 2 . The first passivation layer 920 may have aboutTo about->But is not limited thereto.
According to some embodiments, the first passivation layer 920 may contact the color conversion transmission layer 500 to prevent or reduce penetration of foreign substances or the like into the color conversion transmission layer 500.
In addition, since the first passivation layer 920 has a refractive index greater than that of the low refractive inorganic layer 910, reflection can easily occur at an interface between the first passivation layer 920 and the low refractive inorganic layer 910. Light reflected from the low refractive inorganic layer 910 is re-incident on the color conversion transmission layer 500 and undergoes color conversion and/or scattering, and is then extracted to the outside. By repeating the reflection and re-incidence, the light efficiency of the display device can be improved.
Fig. 12A is a schematic cross-sectional view of a display device according to some embodiments, and fig. 12B is a cross-sectional view of a portion of fig. 12A to describe the principle of improvement of light efficiency. Hereinafter, differences between the display device shown in fig. 12A and the display device according to the embodiment shown in fig. 10A will be mainly described.
Referring to fig. 2B and 12A, the display device includes: a first substrate 100; a second substrate 700 opposite to the first substrate 100; a light emitting element layer 300 on the first substrate 100 and including at least one of a first light emitting element LED1, a second light emitting element LED2, and a third light emitting element LED 3; an encapsulation layer 400 on the light emitting element layer 300 and including at least one of inorganic encapsulation layers 410 and 430, i.e., a first inorganic encapsulation layer 410 and a second inorganic encapsulation layer 430) (and at least one organic encapsulation layer 420; a color conversion transmission layer 500 on the encapsulation layer 400 and configured to convert light emitted from at least one of the first, second, and third light emitting elements LED1, LED2, and LED3 into light having a different color, the color conversion transmission layer 500 including quantum dots; a low refractive inorganic layer 910 positioned on the color conversion transmission layer 500 and having a refractive index smaller than that of the color conversion transmission layer 500; a color filter layer 600 on a surface of the second substrate 700 opposite to the first substrate 100; and a filler 800 located between the low refractive inorganic layer 910 and the color filter layer 600 and having a refractive index greater than that of the low refractive inorganic layer 910.
According to some embodiments, the first passivation layer 920 may be located on the low refractive inorganic layer 910, and the low refractive organic layer 930 and the second passivation layer 940 may be located under the color filter layer 600.
The low refractive organic layer 930 is a layer having a reduced refractive index by scattering porous particles such as hollow silica in an organic material, and may have a refractive index of about 1.2 to about 1.3. According to some embodiments, the low refractive organic layer 930 may have a refractive index that is less than the refractive index of the low refractive inorganic layer 910. In addition to the function of reflecting light from the surface to improve light efficiency, the low refractive inorganic layer 910 may planarize the color filter layer 600.
The second passivation layer 940 may include an inorganic material such as silicon oxynitride or silicon oxide, and may have a refractive index of from about 1.45 to about 1.55. According to some embodiments, both the second passivation layer 940 and the low refractive inorganic layer 910 may include silicon oxide, but the refractive index of the second passivation layer 940 may be greater than the low refractive inorganic layer 910.
The second passivation layer 940 performs the same function as the first passivation layer 920. That is, the second passivation layer 940 protects the first, second, and third color filters 610, 620, 630 from external moisture.
The low refractive organic layer 930 has a refractive index smaller than that of the second passivation layer 940, and light transmitted through the color conversion transmission layer 500 and incident to the low refractive organic layer 930 via the filler 800 may be reflected from an interface between the low refractive organic layer 930 and the second passivation layer 940.
Referring to fig. 12B, as described above with reference to fig. 10B, light is reflected from the interface between the color conversion transmission layer 500 and the low refractive inorganic layer 910, and in addition, light is reflected from the interface between the second passivation layer 940 and the low refractive organic layer 930 via the filler 800.
The reflected light may be re-incident on the color conversion transmission layer 500 via the filler 800, and the light that has been re-incident may undergo color conversion and/or scattering again and then may be extracted to the outside. However, since the distance between the color conversion transmission layer 500 and the low refractive organic layer 930 is relatively large, some loss of light may occur during movement through the optical path. In addition, according to some embodiments, the extinction coefficient (k) of the low refractive organic layer 930 may be greater than the extinction coefficient of the low refractive inorganic layer 910.
The display device according to the embodiment shown in fig. 12A includes a low refractive organic layer 930 in addition to the low refractive inorganic layer 910, and light efficiency can be further improved by improving light utility through reflection and re-incidence.
Although the embodiment shown in fig. 12A shows a case in which the first passivation layer 920 is located on the low refractive inorganic layer 910, the embodiment shown in fig. 12A may also be applied to a case in which the first passivation layer 920 and the low refractive inorganic layer 910 are sequentially stacked on the color conversion transmission layer 500, similar to the embodiment shown in fig. 11, according to some embodiments.
Fig. 13 is a schematic cross-sectional view of a display device according to some embodiments.
Referring to fig. 2B and 13, the display device includes: a first substrate 100; a second substrate 700 opposite to the first substrate 100; a light emitting element layer 300 on the first substrate 100 and including at least one of a first light emitting element LED1, a second light emitting element LED2, and a third light emitting element LED 3; an encapsulation layer 400 on the light emitting element layer 300 and including at least one of inorganic encapsulation layers 410 and 430 (i.e., a first inorganic encapsulation layer 410 and a second inorganic encapsulation layer 430) and at least one organic encapsulation layer 420; a color conversion transmission layer 500 on the encapsulation layer 400 and configured to convert light emitted from at least one of the first, second, and third light emitting elements LED1, LED2, and LED3 into light having a different color, the color conversion transmission layer 500 including quantum dots; a low refractive inorganic layer 910 positioned on the color conversion transmission layer 500 and having a refractive index smaller than that of the color conversion transmission layer 500; a color filter layer 600 on a surface of the second substrate 700 opposite to the first substrate 100; and a filler 800 located between the low refractive inorganic layer 910 and the color filter layer 600 and having a refractive index greater than that of the low refractive inorganic layer 910.
According to some embodiments, the light blocking partition wall 540 may be formed on the second inorganic encapsulation layer 430. The light blocking partition wall 540 may surround the emission areas, i.e., the first, second, and third emission areas EA1, EA2, and EA3 (see fig. 6), and in a plane (in the x-y plane), the light blocking partition wall 540 may have a mesh structure.
The light blocking partition wall 540 may include a colored insulating material. For example, the light blocking partition wall 540 may include a Polyimide (PI) -based adhesive and a pigment obtained by a combination of red, blue, and green. Alternatively, the light blocking partition wall 540 may include a combination of a card-type binder resin and a lactam black pigment and a blue pigment. Alternatively, the light blocking partition wall 54 may include carbon black. The light blocking partition wall 540 may include openings corresponding to the first, second, and third emission areas EA1, EA2, and EA3, respectively.
The light blocking partition wall 540 may prevent or reduce the light converted and scattered by the first color converter 510 and the second color converter 520, which will be described later, from moving to another area. In addition, the light blocking partition wall 540 may prevent or reduce reflection of external light caused by a color filter to be described later, thereby improving contrast of the display device DV.
After the light blocking partition wall 540 is formed, the first color converter 510', the second color converter 520', and the transmitter 530' are formed. The materials included in the first color converter 510', the second color converter 520', and the transmitter 530' are the same as those described above with reference to fig. 3. The first color converter 510', the second color converter 520', and the transmitter 530' may be formed in an inkjet method. According to some embodiments, the first color converter 510', the second color converter 520', and the transmitter 530' may have a concave shape with respect to the top surface of the light blocking partition wall 540. This may be caused by shrinkage of the ink during the manufacturing process.
The low refractive inorganic layer 910 'and the first passivation layer 920' may be sequentially disposed on the color conversion transmission layer 500 (see fig. 2B). According to some embodiments, the low refractive inorganic layer 910' may include a low refractive inorganic material having a refractive index greater than 1.2 and less than 1.4. Typically, silicon oxide (SiO 2 ) Has a refractive index of 1.45 to 1.5 relatively lower than that of silicon nitride, silicon oxynitride, or the like. The low refractive inorganic layer 910' is formed by CVD and may be formed by a deposition process during the deposition processThe amount of material or deposition conditions are changed to form a silicon oxide film having a refractive index of less than 1.4.
According to some embodiments, the first color converter 510', the second color converter 520', and the transmitter 530' may have a refractive index of about 1.7 to about 1.8, and for example, a refractive index difference between each of the first color converter 510', the second color converter 520', and the transmitter 530' and the low refractive inorganic layer 910' may be at least 0.3.
According to some embodiments, the thickness of the low refractive inorganic layer 910' may be aboutTo about->Since the low refractive inorganic layer 910' is substantially formed with a substantially uniform thickness, the top surface of the low refractive inorganic layer 910' is uneven and may have grooves corresponding to the concave shapes of the first color converter 510', the second color converter 520', and the transmitter 530 '.
The first passivation layer 920 'may be positioned on the low refractive inorganic layer 910', and the first passivation layer 920 'may have a refractive index greater than that of the low refractive inorganic layer 910'. For example, the first passivation layer 920' may include SiON having a refractive index of about 1.6. According to some embodiments, the first passivation layer 920' may include silicon oxide (SiO) having a refractive index greater than that of the low refractive inorganic layer 910 x ). The first passivation layer 920' may have aboutTo about- >But is not limited thereto.
Since the first passivation layer 920' is substantially formed with a substantially uniform thickness, the top surface of the first passivation layer 920' is not flat and may have a shape corresponding to the concave shapes of the first color converter 510', the second color converter 520', and the transmitter 530 '. That is, the surface of the light emitting panel 1000 opposite to the color filter panel 2000 may be uneven.
Although fig. 13 illustrates an embodiment in which the low refractive inorganic layer 910 'and the first passivation layer 920' are sequentially disposed on the color conversion transmission layer 500 (see fig. 2B), according to some embodiments, the first passivation layer 920 and the low refractive inorganic layer 910 may be sequentially disposed on the color conversion transmission layer 500 (see fig. 2B) similar to the embodiment illustrated in fig. 11, and in this case, the top surfaces of the first passivation layer 920 and the low refractive inorganic layer 910 may be uneven. In addition, similarly to the embodiment shown in fig. 12A, the embodiment shown in fig. 13 may also be applied to a case in which the first passivation layer 920 is located on the low refractive inorganic layer 910 and the low refractive organic layer 930 and the second passivation layer 940 are located under the color filter layer 600. In this case, the top surfaces of the first passivation layer 920 and the low refractive inorganic layer 910 may be uneven.
Table 1 shows simulation results of light efficiency and external light reflectance of the display device of fig. 10A according to the embodiment, compared to the comparative example, when the thickness of the filler is 5 μm. The comparative example relates to a display device in which only the first passivation layer 920 is located on the color conversion transmission layer 500 without the low refractive inorganic layer 910 and the low refractive organic layer 930 and the second passivation layer 940 are located under the color filter layer 600.
Referring to table 1, the light efficiency of the display device according to some embodiments is shown to be increased by 9% relative to white light. In order to exclude an increase in light efficiency caused by the reflectance of external light, a result of the case where the reflectance of external light is the same was also obtained, and in this case, it is apparent that the light efficiency was increased by 4% with respect to white light. Here, SCI indicates the reflectivity including both diffuse reflection and specular reflection, SCE indicates the reflectivity including only diffuse reflection.
TABLE 1
Fig. 14 is a schematic cross-sectional view of a display device according to some embodiments.
Referring to fig. 2B and 14, the display device includes: a first substrate 100; a second substrate 700 opposite to the first substrate 100; a light emitting element layer 300 on the first substrate 100 and including at least one of a first light emitting element LED1, a second light emitting element LED2, and a third light emitting element LED 3; an encapsulation layer 400 on the light emitting element layer 300 and including at least one of inorganic encapsulation layers 410 and 430 (i.e., a first inorganic encapsulation layer 410 and a second inorganic encapsulation layer 430) and at least one organic encapsulation layer 420; a color conversion transmission layer 500 on the encapsulation layer 400 and configured to convert light emitted from at least one of the first, second, and third light emitting elements LED1, LED2, and LED3 into light having other colors, the color conversion transmission layer 500 including quantum dots; a low refractive inorganic layer 910 positioned on the color conversion transmission layer 500 and having a refractive index smaller than that of the color conversion transmission layer 500; a color filter layer 600 is positioned on a surface of the second substrate 700 opposite to the first substrate 100 and spaced apart from the low refractive inorganic layer 910, and an air gap (or referred to as an "air gap") 800' is between the color filter layer 600 and the low refractive inorganic layer 910.
According to some embodiments, since the air gap 800' may be naturally formed during the bonding process, no additional filler or filling process is required and thus may be economical. In addition, the air gap 800' may be filled with a gas (including normal air) from which oxygen or a gas containing some components may be removed or to which a gas containing some components may be added.
According to some embodiments, the refractive index of the low refractive inorganic layer 910 may be greater than 1.2 and less than 1.4, and the thickness of the low refractive inorganic layer 910 may be aboutTo about->The low refractive inorganic layer 910 may be formed by CVD, and may be deposited byThe material content or deposition conditions are varied during the deposition process to form a silicon oxide film having a refractive index of less than 1.4. The low refractive inorganic layer 910 formed by CVD may include an inorganic layer including only an inorganic material and not an organic material.
The difference between the refractive index of the color conversion transmission layer 500 and the refractive index of the low refractive inorganic layer 910 may be 0.3 or more, and the light efficiency may be improved by reflection from the interface between the color conversion transmission layer 500 and the low refractive inorganic layer 910.
The color filter layer 600 may include a first color filter 610 configured to transmit light having a first color, a second color filter 620 configured to transmit light having a second color, a third color filter 630 configured to transmit light having a third color, and a light blocking portion 600P (see fig. 9), and the light blocking portion 600P may be formed by stacking the first color layer 610P, the second color layer 620P, and the third color layer 630P, which respectively include the same materials as the first color filter 610, the second color filter 620, and the third color filter 630.
Although fig. 14 shows that each of the first color converter 510, the second color converter 520, and the transmitter 530 has a flat top surface, as shown in fig. 13, each of the first color converter 510, the second color converter 520, and the transmitter 530 may have a concave shape recessed with respect to the top surface of the light blocking partition wall 540. In this case, the low refractive inorganic layer 910 may also include grooves formed according to the shape of the depressions.
Although fig. 14 illustrates an embodiment in which the low refractive inorganic layer 910 and the first passivation layer 920 are sequentially disposed on the color conversion transmission layer 500 (see fig. 2B) and the air gap 800' directly contacts the first passivation layer 920, according to some embodiments, the first passivation layer 920 and the low refractive inorganic layer 910 may be sequentially disposed on the color conversion transmission layer 500 (see fig. 2B) similar to the embodiment illustrated in fig. 11. In this case, the air gap 800' may directly contact the low refractive inorganic layer 910. The first passivation layer 920 may have a refractive index greater than that of the low refractive inorganic layer 910, and may include, for example, silicon oxynitride (SiON) having a refractive index of about 1.6. According to some embodimentsThe first passivation layer 920 may include SiO having a lower refractive index than the low refractive index of the low refractive inorganic layer 910 2 . The first passivation layer 920 may have aboutTo about->But is not limited thereto.
According to some embodiments, like the embodiment shown in fig. 12A, the air gap 800' may also be applied in embodiments in which the first passivation layer 920 is located on the low refractive inorganic layer 910 and the low refractive organic layer 930 and the second passivation layer 940 are located below the color filter layer 600. In this case, the air gap 800' may be located between the first passivation layer 920 and the second passivation layer 940.
According to the above-described embodiments, the light emitting panel 1000 includes the color conversion transmission layer 500 and the low refractive inorganic layer 910 on the color conversion transmission layer 500, and light is reflected from an interface between the color conversion transmission layer 500 and the low refractive inorganic layer 910 and re-incident to the color conversion transmission layer 500, and thus, light efficiency may be improved.
The low refractive inorganic layer 910 is included in the light emitting panel 1000 and is in contact with the color conversion transmission layer 500 or is disposed adjacent to the color conversion transmission layer 500, and thus, loss of light from the color conversion transmission layer 500 before reaching the low refractive inorganic layer 910 can be reduced as much as possible.
The low refractive inorganic layer 910 has an extinction coefficient lower than that of the low refractive organic layer 930, and the material cost of the low refractive inorganic layer 910 is far lower than that of the low refractive organic layer 930, and thus may be advantageous in terms of cost as compared to a configuration including the low refractive organic layer 930.
According to some embodiments, the display device DV may further include a low refractive organic layer 930 configured to planarize the color filter layer 600 and having a low refractive index, in addition to the low refractive inorganic layer 910. When the display device DV further includes the low refractive organic layer 930, the manufacturing cost may be increased, and the light efficiency may be further improved.
According to the above embodiments, a display device having relatively high efficiency can be provided. However, the scope of the disclosure is not limited thereto.
It should be understood that the embodiments described herein should be considered in descriptive sense only and not for purposes of limitation. Descriptions of features or aspects within each embodiment should generally be considered as available for other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope as defined by the following claims and their equivalents.
Claims (10)
1. A display device, characterized in that the display device comprises:
a first substrate;
a second substrate opposite to the first substrate;
A light emitting element layer on the first substrate and including at least one light emitting element;
an encapsulation layer on the light emitting element layer and including at least one inorganic encapsulation layer and at least one organic encapsulation layer;
a color conversion transmission layer on the encapsulation layer and configured to convert light emitted from the at least one light emitting element into light having a different color;
a low refractive inorganic layer on the color conversion transmission layer and having a refractive index smaller than that of the color conversion transmission layer; and
and a color filter layer on a surface of the second substrate opposite to the first substrate.
2. The display device according to claim 1, further comprising a filler that is between the low refractive inorganic layer and the color filter layer and has a refractive index that is larger than the refractive index of the low refractive inorganic layer.
3. The display device according to claim 1, wherein the refractive index of the low refractive inorganic layer is greater than 1.2 and less than 1.4.
4. A display device according to claim 3, wherein the low refractive inorganic layer comprises silicon oxide.
5. The display device according to claim 1, wherein the low refractive inorganic layer has a thickness ofTo the point of
6. The display device according to claim 1, wherein a difference between the refractive index of the color conversion transmission layer and the refractive index of the low refractive inorganic layer is at least 0.3.
7. The display device according to claim 2, further comprising a first passivation layer between the color conversion transmission layer and the filler, the first passivation layer having a refractive index greater than the refractive index of the low refractive inorganic layer.
8. The display device of claim 7, wherein the first passivation layer is between the low refractive inorganic layer and the filler.
9. The display device according to claim 7, wherein the first passivation layer is between the color conversion transmissive layer and the low refractive inorganic layer.
10. The display device according to claim 1, further comprising a low refractive organic layer and a second passivation layer on a surface of the color filter layer opposite the color conversion transmission layer.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2022-0060452 | 2022-05-17 | ||
| KR1020220068504A KR20230161289A (en) | 2022-05-17 | 2022-06-03 | Display apparatus |
| KR10-2022-0068504 | 2022-06-03 |
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| CN220326163U true CN220326163U (en) | 2024-01-09 |
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| CN202310554072.XA Pending CN117080344A (en) | 2022-05-17 | 2023-05-17 | Display device |
| CN202321190445.1U Active CN220326163U (en) | 2022-05-17 | 2023-05-17 | Display device |
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| Application Number | Title | Priority Date | Filing Date |
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