US20210132499A1 - Apparatus and method for treating substrate - Google Patents
Apparatus and method for treating substrate Download PDFInfo
- Publication number
- US20210132499A1 US20210132499A1 US17/084,903 US202017084903A US2021132499A1 US 20210132499 A1 US20210132499 A1 US 20210132499A1 US 202017084903 A US202017084903 A US 202017084903A US 2021132499 A1 US2021132499 A1 US 2021132499A1
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- Prior art keywords
- substrate
- height
- gas
- support plate
- hydrophobic
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- 239000000758 substrate Substances 0.000 title claims abstract description 315
- 238000000034 method Methods 0.000 title claims abstract description 125
- 230000002209 hydrophobic effect Effects 0.000 claims abstract description 65
- NEXSMEBSBIABKL-UHFFFAOYSA-N hexamethyldisilane Chemical compound C[Si](C)(C)[Si](C)(C)C NEXSMEBSBIABKL-UHFFFAOYSA-N 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 description 77
- 239000007788 liquid Substances 0.000 description 71
- 239000000872 buffer Substances 0.000 description 38
- 238000000576 coating method Methods 0.000 description 30
- 238000001816 cooling Methods 0.000 description 25
- 239000011248 coating agent Substances 0.000 description 23
- 239000000284 extract Substances 0.000 description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 238000012986 modification Methods 0.000 description 9
- 230000004048 modification Effects 0.000 description 9
- 239000000969 carrier Substances 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 239000006227 byproduct Substances 0.000 description 2
- 239000007888 film coating Substances 0.000 description 2
- 238000009501 film coating Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000012809 cooling fluid Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000005660 hydrophilic surface Effects 0.000 description 1
- 230000005661 hydrophobic surface Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67766—Mechanical parts of transfer devices
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
Definitions
- Embodiments of the inventive concept described herein relate to an apparatus and method for treating a substrate, and more particularly, relate to an apparatus and method for treating a substrate with a gas.
- the photolithography process includes a coating process of forming a coating film on a substrate, and surface modification of the substrate has to be performed before the coating film is formed.
- the surface modification is a process of modifying the property of the substrate surface to a property that is the same as, or similar to, that of the coating film.
- the surface modification includes a process of supplying a process gas to the surface of the substrate.
- the coating film may have a hydrophobic property
- the process gas may include a hydrophobic gas.
- the hydrophobic gas hydrophobicizes the surface of the substrate, and the degree of hydrophobization serves as an important factor affecting the adhesion and thickness of the coating film. Accordingly, the degree of hydrophobization may be differently applied depending on the property and type of the coating film, a process, and an environment.
- the hydrophobic gas is a gas generated by gasifying a hydrophobic liquid, and it is difficult to adjust the flow rate of the hydrophobic gas.
- the hydrophobic gas may be formed by supplying a vaporized gas to the hydrophobic liquid.
- an adjustment member such as a valve is installed to adjust the flow rate of the hydrophobic gas, the supply of the vaporized gas may be affected.
- hydrophobization processes have to be performed in apparatuses having different environments.
- Embodiments of the inventive concept provide an apparatus and method for adjusting the degree of hydrophobization of a substrate surface.
- embodiments of the inventive concept provide an apparatus and method for differently applying the degree of hydrophobization of a substrate surface in the same apparatus.
- an apparatus for treating a substrate includes a chamber having a process space in which the substrate is treated, a substrate support unit that supports the substrate in the process space, a gas supply unit that supplies a hydrophobic gas onto the substrate supported on the substrate support unit, and a controller that controls the substrate support unit and the gas supply unit.
- the substrate support unit includes a support plate on which the substrate is placed and a pin assembly that raises the substrate off the support plate or lowers the substrate onto the support plate, and the controller controls a degree of hydrophobization of a surface of the substrate by adjusting the pin assembly.
- the controller may move a first substrate to a first height such that a surface of the first substrate has a first hydrophobic property and may move a second substrate to a second height such that a surface of the second substrate has a second hydrophobic property.
- the first hydrophobic property may have a higher degree of hydrophobization than the second hydrophobic property, and the first height may be closer to the gas supply unit than the second height.
- the gas supply unit may include a gas supply tube that supplies the hydrophobic gas into the process space and that is located over the support plate, a dispensing end of the gas supply tube may be located to overlap the support plate when viewed from above, and the first height may be closer to the dispensing end than the second height.
- the controller may control the gas supply unit such that a flow rate of the hydrophobic gas dispensed from the gas supply tube is constant.
- the first height may be a height at which the first substrate is spaced apart from the support plate, and the second height may be a height at which the second substrate is seated on the support plate.
- the first height may be a height at which the first substrate is spaced apart from the support plate
- the second height may be a height at which the second substrate is spaced apart from the support plate
- a method for treating a substrate includes a first treatment step of hydrophobicizing a surface of a first substrate such that the surface of the first substrate has a first hydrophobic property, by supplying a hydrophobic gas to the first substrate and a second treatment step of hydrophobicizing a surface of a second substrate such that the surface of the second substrate has a second hydrophobic property, by supplying a hydrophobic gas to the second substrate.
- the first hydrophobic property and the second hydrophobic property have different degrees of hydrophobization, and a first distance between a dispensing end through which the hydrophobic gas is dispensed and the first substrate in the first treatment step is different from a second distance between the dispensing end through which the hydrophobic gas is dispensed and the second substrate in the second treatment step.
- the first hydrophobic property may have a higher degree of hydrophobization than the second hydrophobic property, and the first distance may be smaller than the second distance.
- the hydrophobic gas used in the first treatment step may be the same as the hydrophobic gas used in the second treatment step.
- the first treatment step and the second treatment step may be performed in the same chamber.
- the dispensing end through which the hydrophobic gas is dispensed may face a support plate that supports the first substrate and the second substrate and may be located to overlap the support plate when viewed from above.
- the dispensing end may be located to face the center of the first substrate and the center of the second substrate.
- the hydrophobic gas may be dispensed at the same flow rate in the first treatment step and the second treatment step.
- the hydrophobic gas may include a hexamethyldisilane (HMDS) gas.
- HMDS hexamethyldisilane
- a method for treating a substrate includes hydrophobicizing a surface of the substrate by supplying a hydrophobic gas to the substrate, in which a degree of hydrophobization of the surface is adjusted by adjusting a position of the substrate.
- the adjusting of the position of the substrate may include adjusting a distance between a dispensing position in which the hydrophobic gas is dispensed and the substrate.
- the dispensing position may be located over the substrate.
- the degree of hydrophobization may be adjusted by moving the substrate to a first height such that the surface has a first hydrophobic property, or by moving the substrate to a second height such that the surface has a second hydrophobic property.
- the first height may be higher than the second height.
- the first hydrophobic property may have a higher degree of hydrophobization than the second hydrophobic property.
- a flow rate at which the hydrophobic gas is dispensed may be constant.
- the hydrophobic gas may include a hexamethyldisilane (HMDS) gas.
- FIG. 1 is a schematic perspective view illustrating a substrate treating apparatus according to an embodiment of the inventive concept
- FIG. 2 is a sectional view illustrating coating blocks and developing blocks of the substrate treating apparatus of FIG. 1 ;
- FIG. 3 is a plan view illustrating the substrate treating apparatus of FIG. 2 ;
- FIG. 4 is a view illustrating one example of a hand of a transfer robot of FIG. 3 ;
- FIG. 5 is a schematic plan view illustrating one example of a heat treatment chamber of FIG. 3 ;
- FIG. 6 is a front view of the heat treatment chamber of FIG. 5 ;
- FIG. 7 is a sectional view illustrating a heating unit of FIG. 6 .
- FIG. 8 is a plan view illustrating a substrate support unit of FIG. 7 ;
- FIG. 9 is a flowchart illustrating a process of treating a substrate using the apparatus of FIG. 7 ;
- FIG. 10 is a view illustrating a process of treating a first substrate in the apparatus of FIG. 7 ;
- FIG. 11 is a view illustrating a process of treating a second substrate in the apparatus of FIG. 7 ;
- FIG. 12 is a schematic view illustrating one example of liquid treatment chambers of FIG. 3 .
- inventive concept will be described in more detail with reference to the accompanying drawings.
- inventive concept may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that the inventive concept will be thorough and complete, and will fully convey the scope of the inventive concept to those skilled in the art.
- the dimensions of components are exaggerated for clarity of illustration.
- FIG. 1 is a schematic perspective view illustrating a substrate treating apparatus according to an embodiment of the inventive concept.
- FIG. 2 is a sectional view illustrating coating blocks and developing blocks of the substrate treating apparatus of FIG. 1 .
- FIG. 3 is a plan view illustrating the substrate treating apparatus of FIG. 2 .
- the substrate treating apparatus 1 includes an index module 20 , a treating module 30 , and an interface module 40 .
- the index module 20 , the treating module 30 , and the interface module 40 are sequentially disposed in a row.
- a direction in which the index module 20 , the treating module 30 , and the interface module 40 are arranged is referred to as a first direction 12
- a direction perpendicular to the first direction 12 when viewed from above is referred to as a second direction 14
- a direction perpendicular to the first direction 12 and the second direction 14 is referred to as a third direction 16 .
- the index module 20 transfers substrates W from carriers 10 having the substrates W received therein to the treating module 30 and places the completely treated substrates W in the carriers 10 .
- the lengthwise direction of the index module 20 is parallel to the second direction 14 .
- the index module 20 has load ports 22 and an index frame 24 .
- the load ports 22 are located on the opposite side to the treating module 30 with respect to the index frame 24 .
- the carriers 10 each of which has the substrates W received therein, are placed on the load ports 22 .
- the load ports 22 may be disposed along the second direction 14 .
- Airtight carriers such as front open unified pods (FOUPs) may be used as the carriers 10 .
- the carriers 10 may be placed on the load ports 22 by a transfer unit (not illustrated) such as an overhead transfer, an overhead conveyor, or an automatic guided vehicle, or by an operator.
- a transfer unit such as an overhead transfer, an overhead conveyor, or an automatic guided vehicle, or by an operator.
- An index robot 2200 is provided in the index frame 24 .
- a guide rail 2300 the lengthwise direction of which is parallel to the second direction 14 , is provided in the index frame 24 , and the index robot 2200 is movable on the guide rail 2300 .
- the index robot 2200 includes hands 2220 on which the substrates W are placed.
- the hands 2220 are movable forward and backward, rotatable about an axis facing in the third direction 16 , and movable along the third direction 16 .
- Each of the coating blocks 30 a has heat treatment chambers 3200 , a transfer chamber 3400 , liquid treatment chambers 3600 , and buffer chambers 3800 .
- Each of the heat treatment chambers 3200 performs a heat treatment process on the substrate W.
- the heat treatment process may include a cooling process and a heating process.
- Each of the liquid treatment chambers 3600 forms a liquid film on the substrate W by dispensing a liquid onto the substrate W.
- the liquid film may be a photoresist film or an anti-reflection film.
- the transfer chamber 3400 transfers the substrate W between the heat treatment chamber 3200 and the liquid treatment chamber 3600 in the coating block 30 a.
- the transfer chamber 3400 is disposed such that the lengthwise direction thereof is parallel to the first direction 12 .
- a transfer robot 3422 is provided in the transfer chamber 3400 .
- the transfer robot 3422 transfers the substrate W between the heat treatment chamber 3200 , the liquid treatment chamber 3600 , and the buffer chambers 3800 .
- the transfer robot 3422 has a hand 3420 on which the substrate W is placed, and the hand 3420 is movable forward and backward, rotatable about an axis facing in the third direction 16 , and movable along the third direction 16 .
- a guide rail 3300 the lengthwise direction of which is parallel to the first direction 12 , is provided in the transfer chamber 3400 , and the transfer robot 3422 is movable on the guide rail 3300 .
- FIG. 4 is a view illustrating one example of the hand of the transfer robot of FIG. 3 .
- the hand 3420 has a base 3428 and support protrusions 3429 .
- the base 3428 may have an annular ring shape, the circumference of which is partly curved.
- the base 3428 has an inner diameter greater than the diameter of the substrate W.
- the support protrusions 3429 extend inward from the base 3428 .
- the support protrusions 3429 support an edge region of the substrate W. According to an embodiment, four support protrusions 3429 may be provided at equal intervals.
- the heat treatment chambers 3200 are arranged along the first direction 12 .
- the heat treatment chambers 3200 are located on one side of the transfer chamber 3400 .
- a heat treatment chamber 3202 located closest to the index module 20 performs heat treatment on the substrate W before the substrate W is transferred to the liquid treatment chamber 3600
- the other heat treatment chambers 3206 perform heat treatment on the substrate W treated with a liquid in the liquid treatment chamber 3600 .
- the heat treatment chamber located closest to the index module 20 is defined as the front heat treatment chamber 3202 .
- the front heat treatment chamber 3202 may improve adhesion of photoresist to the substrate W by supplying a process gas while heating the substrate W.
- the process gas modifies the surface of the substrate W.
- the process gas changes the surface of the substrate W from a hydrophilic surface to a hydrophobic surface.
- the process gas may be a hexamethyldisilane gas. The process gas is not supplied to the heat treatment chamber 3200 located at the rear end.
- FIG. 5 is a schematic plan view illustrating one example of the heat treatment chamber of FIG. 3
- FIG. 6 is a front view of the heat treatment chamber of FIG. 5
- the heat treatment chamber 3202 has a housing 3210 , a cooling unit 3220 , a heating unit 3230 , and a transfer plate 3240 .
- the housing 3210 has a substantially rectangular parallelepiped shape.
- the housing 3210 has, in a sidewall thereof, an entrance/exit opening (not illustrated) through which the substrate W enters and exits the housing 3210 .
- the entrance/exit opening may be maintained in an open state.
- a door (not illustrated) may be provided to open and close the entrance/exit opening.
- the cooling unit 3220 , the heating unit 3230 , and the transfer plate 3240 are provided in the housing 3210 .
- the cooling unit 3220 and the heating unit 3230 are provided side by side along the second direction 14 . According to an embodiment, the cooling unit 3220 may be located closer to the transfer chamber 3400 than the heating unit 3230 .
- the cooling unit 3220 has a cooling plate 3222 .
- the cooling plate 3222 may have a substantially circular shape when viewed from above.
- a cooling member 3224 is provided inside the cooling plate 3222 .
- the cooling member 3224 may be formed inside the cooling plate 3222 and may serve as a fluid channel through which a cooling fluid flows.
- the heating unit 3230 is implemented with an apparatus 1000 that heats the substrate W to a temperature higher than the room temperature.
- the heating unit 3230 heats the substrate W in an atmospheric atmosphere or in an atmosphere of reduced pressure lower than the atmospheric pressure.
- FIG. 7 is a sectional view illustrating the heating unit of FIG. 6 .
- the heating unit 3230 includes a chamber 1100 , a substrate support unit 1300 , a heater unit 1400 , a gas supply unit 1500 , and a controller 1900 .
- the chamber 1100 has a process space 1110 therein in which heat treatment is performed on the substrate W.
- the process space 1110 is sealed from the outside.
- the chamber 1100 includes an upper body 1120 , a lower body 1140 , and a sealing member 1160 .
- the upper body 1120 has a container shape that is open at the bottom.
- the upper body 1120 has a central hole 1124 and peripheral holes 1122 formed in an upper wall thereof.
- the central hole 1124 is formed in the center of the upper body 1120 .
- the central hole 1124 functions as an inlet hole 1124 through which a process gas is introduced into the chamber 1100 .
- the peripheral holes 1122 are used to evacuate an atmosphere in the process space 1110 .
- the peripheral holes 1122 are spaced apart from each other and are arranged to surround the central hole 1124 . According to an embodiment, four peripheral holes 1122 may be provided.
- the lower body 1140 has a container shape that is open at the top.
- the lower body 1140 is located under the upper body 1120 .
- the upper body 1120 and the lower body 1140 are located to face each other in an up-down direction.
- the upper body 1120 and the lower body 1140 are combined with each other to form the process space 1110 inside.
- the upper body 1120 and the lower body 1140 are located such that the central axes thereof are aligned with each other in the up-down direction.
- the lower body 1140 may have the same diameter as the upper body 1120 . That is, an upper end of the lower body 1140 may be located to face a lower end of the upper body 1120 .
- One of the upper body 1120 and the lower body 1140 is moved to an open position or a closed position by a lifting member 1130 , and the other is fixed in position.
- the lower body 1140 is fixed in position and the upper body 1120 is moved.
- the open position is a position in which the upper body 1120 and the lower body 1140 are spaced apart from each other and therefore the process space 1110 is open.
- the closed position is a position in which the process space 1110 is sealed from the outside by the lower body 1140 and the upper body 1120 .
- the sealing member 1160 is located between the upper body 1120 and the lower body 1140 .
- the sealing member 1160 seals the process space 1110 from the outside when the upper body 1120 and the lower body 1140 are brought into contact with each other.
- the sealing member 1160 may have an annular ring shape.
- the sealing member 1160 may be fixedly coupled to the upper end of the lower body 1140 .
- the substrate support unit 1300 supports the substrate W in the process space 1110 .
- FIG. 8 is a plan view illustrating the substrate support unit of FIG. 7 .
- the substrate support unit 1300 is fixedly coupled to the lower body 1140 .
- the substrate support unit 1300 includes a support plate 1320 , support pins 1360 , a pin assembly 1340 , and a guide 1380 .
- the support plate 1320 transfers, to the substrate W, heat generated from the heater unit 1400 .
- the support plate 1320 has a circular plate shape. An upper surface of the support plate 1320 has a larger diameter than the substrate W.
- the support plate 1320 has pin holes 1322 and the support pins 1360 on an upper surface thereof.
- the pin holes 1322 are provided as spaces in which lift pins 1342 of the pin assembly 1340 are located.
- the support pins 1360 prevent the substrate W from making direct contact with the upper surface of the support plate 1320 .
- the support pins 1360 may have a pin shape, the lengthwise direction of which is directed in the up-down direction, or may have a protrusion shape protruding upward.
- the support pins 1360 are fixed to a seating surface of the support plate 1320 .
- Upper ends of the support pins 1360 are provided as contact surfaces making direct contact with the backside of the substrate W, and the contact surfaces have a shape that is convex upward. Accordingly, contact areas between the support pins 1360 and the substrate W may be minimized.
- three pin holes 1322 may be provided, and more support pins 1360 than the pin holes 1322 may be provided.
- the pin assembly 1340 raises the substrate W off the support plate 1320 , or lowers the substrate W onto the support plate 1320 . More specifically, the pin assembly 1340 raises the substrate W off the support pins 1360 , or lowers the substrate W onto the support pins 1360 .
- the pin assembly 1340 includes the lift pins 1342 and an actuator (not illustrated). As many lift pins 1342 as the pin holes 1322 are provided. The lift pins 1342 are located in the pin holes 1322 , respectively. The lift pins 1342 have a pin shape that is directed in the vertical direction. The lift pins 1342 may be moved to a raised position or a lowered position in the pin holes 1322 .
- the raised position is a position in which the lift pins 1342 protrude upward from the pin holes 1322
- the lowered position is a position in which the lift pins 1342 are inserted into the pin holes 1322 . More specifically, the raised position is a position in which upper ends of the lift pins 1342 are in a higher position than an upper end of the support plate 1320
- the lowered position is a position in which the upper ends of the lift pins 1342 are in a lower position than the upper end of the support plate 1320 .
- the lift pins 1342 are movable to two or more different heights in the raised position.
- the actuator moves the lift pins 1342 to the raised position and the lowered position.
- the actuator may be a motor. Accordingly, the actuator (not illustrated) may adjust the heights of the lift pins 1342 in a state in which the lift pins 1342 are located in the raised position.
- the guide 1380 guides the substrate W to locate the substrate W in a correct position over the seating surface.
- the guide 1380 has an annular ring shape that surrounds the seating surface.
- the guide 1380 has a larger diameter than the substrate W.
- An inside surface of the guide 1380 has a shape downwardly inclined with an approach to the central axis of the support plate 1320 . Accordingly, the substrate W supported on the inside surface of the guide 1380 is moved to the correct position along the inclined surface. Furthermore, the guide 1380 may slightly prevent a gas flow introduced between the substrate W and the seating surface.
- the heater unit 1400 heats the substrate W placed on the support plate 1320 .
- the heater unit 1400 is located under the substrate W placed on the support plate 1320 .
- the heater unit 1400 includes a plurality of heaters 1420 .
- the heaters 1420 are located inside the support plate 1320 .
- the heaters 1420 may be located on the bottom of the support plate 1320 .
- the heaters 1420 are located on the same plane.
- the heaters 420 may heat different regions of the seating surface to different temperatures. Some of the heaters 1420 may heat a central region of the seating surface to a first temperature, and the other heaters 1420 may heat an edge region of the seating surface to a second temperature. The second temperature may be higher than the first temperature.
- the heaters 1420 may be printed patterns or heating wires.
- the gas supply unit 1500 includes a flow forming plate 1540 and a supply tube 1520 .
- the flow forming plate 1540 has a circular plate shape with an opening.
- the flow forming plate 1540 is provided at a height corresponding to the upper body 1120 .
- the supply tube 1520 functions as a dispensing member that dispenses the process gas onto the substrate W.
- the supply tube 1520 is inserted into the central hole 1124 .
- the supply tube 1520 is provided such that a lower end thereof is located in the process space 1110 and an upper end thereof is located outside the process space 1110 .
- the supply tube 1520 is fixedly coupled to the opening of the flow forming plate 1540 .
- the flow forming plate 1540 and the supply tube 1520 may be integrated with each other.
- the position of a dispensing end 1522 that is the lower end of the supply tube 1520 may be fixed.
- the bottom of the flow forming plate 1540 and the lower end of the supply tube 1520 may be provided at the same height.
- the flow forming plate 1540 divides the process space 1110 into an upper space 1110 a and a lower space 1110 b.
- the lower space 1110 b may function as a space into which the process gas is introduced to treat the substrate W
- the upper space 1110 a may function as an exhaust space through which the process gas is released.
- the flow forming plate 1540 has an outer diameter that is the same as the inner diameter of the upper body 1120 .
- the flow forming plate 1540 has a plurality of exhaust holes 1524 formed in an edge region thereof.
- the exhaust holes 1542 are circumferentially arranged to surround the opening of the flow forming plate 1540 .
- the exhaust holes 1542 may have a circular shape.
- the exhaust holes 1542 may have an arc shape that surrounds an empty space.
- the exhaust holes 1542 are provided so as not to face the substrate W placed on the substrate support unit 1300 . That is, when viewed from above, the exhaust holes 1542 may be circumferentially arranged to surround the periphery of the substrate W placed on the substrate support unit 1300 .
- Process by-products passing through the exhaust holes 1542 are released to the outside through exhaust lines 1560 connected to the peripheral holes 1122 .
- a pressure-reducing member 1580 is connected to the exhaust lines 1560 , and the process by-products are released by exhaust pressure of the pressure-reducing member 1580 . Accordingly, interference with the supply of the process gas to the edge region of the substrate W may be minimized.
- the process gas may be hexamethyldisilane (HMDS) for surface modification of the substrate W.
- HMDS hexamethyldisilane
- the process gas may have a property that is the same as, or similar to, that of a photosensitive liquid.
- the photosensitive liquid may have a hydrophobic property, and the process gas may be a hydrophobic gas having a hydrophobic property.
- the controller 1900 controls the pin assembly 1340 .
- the controller 1900 controls the degree of hydrophobization of the substrate surface by adjusting the height of the substrate W.
- the controller 1900 adjusts the height of the substrate W depending on the degree to which the surface of the substrate W is desired to be hydrophobicized. Adjusting the height of the substrate W includes adjusting the distance between the substrate W and the dispensing end 1522 of the supply tube 1520 . That is, to adjust the degree of hydrophobization of the substrate surface, the controller 1900 may adjust the distance between the substrate W and the dispensing end 1522 .
- the distance between the substrate W and the dispensing end 1522 may be decreased, and in a case of lowering the degree of hydrophobization of the substrate surface, the distance between the substrate W and the dispensing end 1522 may be increased. That is, in the case of raising the degree of hydrophobization, the substrate W may be raised, and in the case of lowering the degree of hydrophobization, the substrate W may be lowered. In the case of raising the degree of hydrophobization, the lift pins 1342 may be moved to the raised position, and in the case of lowering the degree of hydrophobization, the lift pins 1342 may be moved to the lowered position.
- the lift pins 1342 are moved to the raised position and receive the substrate W from the transfer robot 3422 .
- the lift pins 1342 are moved to the lowered position such that the substrate W is placed on the support pins 1360 .
- the upper body 1120 is moved from the open position to the closed position and seals the process space 1110 from the outside. For example, even though the substrate W is treated in a position spaced apart from the support plate 1320 , the substrate W is lowered onto the support pins 1360 and raised again after the chamber 1100 is sealed from the outside.
- the aim is to prevent misalignment of the substrate W in consideration of the stability of the substrate W, when the chamber 110 is moved in a state in which the substrate W is placed on the lift pins 1342 .
- a hydrophobic gas is supplied from the dispensing end 1522 of the supply tube 1520 .
- the hydrophobic gas is supplied to the substrate W and hydrophobicizes the surface of the substrate W.
- the position of the substrate W is adjusted for adjustment of the degree of hydrophobization of the substrate surface.
- the controller 1900 may adjust the degree of hydrophobization by adjusting the distance between the substrate W and the dispensing end 1522 by adjusting the height of the substrate W.
- the height of the substrate W may be differently adjusted.
- the substrate W is raised off the support pins 1360 and moved upward to the first height.
- the first height may be a height at which the substrate W is spaced apart from the support pins 1360 .
- the substrate W is lowered to the second height lower than the first height.
- the second height may be a height at which the substrate W is spaced apart from the support pins 1360 , or may be a height at which the substrate W is placed on the support pins 1360 .
- the second height is described as a height at which the substrate W is placed on the support pins 1360 .
- the distance between the dispensing end 1522 and the substrate W is smaller than that at the second height. Accordingly, the surface of the substrate W located at the first height may have a hydrophobic property greater than that of the surface of the substrate W located at the second height.
- a method for treating a first substrate W 1 and a second substrate W 2 such that the first substrate W 1 and the second substrate W 2 have different degrees of hydrophobization will be described.
- the first substrate W 1 is treated such that a surface of the first substrate W 1 has a first hydrophobic property
- the second substrate W 2 is treated such that a surface of the second substrate W 2 has a second hydrophobic property.
- a hydrophobization process is performed on the first substrate W 1 and the second substrate W 2 .
- the process space 1110 is sealed from the outside, the first substrate W 1 is moved to the first height by the lift pins 1342 , and the second substrate W 2 is located at the second height at which the second substrate W 2 is placed on the support pins 1360 .
- a hydrophobic gas is supplied at the same flow rate in a first treatment step of hydrophobicizing the first substrate W 1 and a second treatment step of hydrophobicizing the second substrate W 2 .
- the same type of hydrophobic gas is supplied in the first treatment step and the second treatment step. Accordingly, the first substrate W 1 and the second substrate W 2 may have different degrees of hydrophobization even though the first treatment step and the second treatment step are performed in the same environment such as the same flow rate, the same type of hydrophobic gas, and the like.
- the transfer plate 3240 has a substantially circular plate shape and has a diameter corresponding to the diameter of the substrate W.
- the transfer plate 3240 has notches 3244 formed at the edge thereof.
- the notches 3244 may have a shape corresponding to the protrusions 3429 formed on the hand 3420 of the transfer robot 3422 described above. Furthermore, as many notches 3244 as the protrusions 3429 formed on the hand 3420 are formed in positions corresponding to the protrusions 3429 .
- the substrate W is transferred between the hand 3420 and the transfer plate 3240 when the vertical positions of the hand 3420 and the transfer plate 3240 aligned with each other in the up-down direction are changed.
- the transfer plate 3240 may be mounted on a guide rail 3249 and may be moved between a first region 3212 and a second region 3214 along the guide rail 3249 by an actuator 3246 .
- a plurality of guide grooves 3242 in a slit shape are formed in the transfer plate 3240 .
- the guide grooves 3242 extend inward from the edge of the transfer plate 3240 .
- the lengthwise direction of the guide grooves 3242 is parallel to the second direction 14 , and the guide grooves 3242 are located to be spaced apart from each other along the first direction 12 .
- the guide grooves 3242 prevent the transfer plate 3240 and the lift pins 1340 from interfering with each other when the substrate W is transferred between the transfer plate 3240 and the heating unit 3230 .
- the transfer plate 3240 is formed of a material having a high heat transfer rate. According to an embodiment, the transfer plate 3240 may be formed of a metallic material.
- the plurality of liquid treatment chambers 3600 are provided. Some of the liquid treatment chambers 3600 may be stacked on each other. The liquid treatment chambers 3600 are disposed on an opposite side of the transfer chamber 3400 . The liquid treatment chambers 3600 are arranged side by side along the first direction 12 . Some of the liquid treatment chambers 3600 are located adjacent to the index module 20 . Hereinafter, these liquid treatment chambers are referred to as the front liquid treatment chambers 3602 . Other liquid treatment chambers 3600 are located adjacent to the interface module 40 . Hereinafter, these liquid treatment chambers are referred to as the rear liquid treatment chambers 3604 .
- Each of the front liquid treatment chambers 3602 applies a first liquid to the substrate W
- each of the rear liquid treatment chambers 3604 applies a second liquid to the substrate W.
- the first liquid and the second liquid may be different types of liquids.
- the first liquid is an anti-reflection film
- the second liquid is photoresist.
- the photoresist may be applied to the substrate W coated with the anti-reflection film.
- the first liquid may be photoresist
- the second liquid may be an anti-reflection film.
- the anti-reflection film may be applied to the substrate W coated with the photoresist.
- the first liquid and the second liquid may be of the same type. Both the first liquid and the second liquid may be photoresist.
- FIG. 12 is a schematic view illustrating one example of the liquid treatment chambers of FIG. 3 .
- the liquid treatment chamber 3600 has a housing 3610 , a treatment vessel 3620 , a substrate support unit 3640 , and a liquid dispensing unit 3660 .
- the housing 3610 has a substantially rectangular parallelepiped shape.
- the housing 3610 has, in a sidewall thereof, an entrance/exit opening (not illustrated) through which the substrate W enters and exits the housing 3610 .
- the entrance/exit opening may be opened and closed by a door (not illustrated).
- the treatment vessel 3620 , the substrate support unit 3640 , and the liquid dispensing unit 3660 are provided in the housing 3610 .
- a fan filter unit 3670 for forming a downward air flow in the housing 3260 may be provided in an upper wall of the housing 3610 .
- the treatment vessel 3620 has a cup shape that is open at the top.
- the treatment vessel 3620 has a process space therein in which the substrate W is treated.
- the substrate support unit 3640 is disposed in the process space and supports the substrate W.
- the substrate support unit 3640 is provided such that the substrate W is rotatable during liquid treatment.
- the liquid dispensing unit 3660 dispenses a liquid onto the substrate W supported on the substrate support unit 3640 .
- the liquid dispensing unit 3660 includes a treatment liquid nozzle 3662 .
- the treatment liquid nozzle 3662 dispenses a treatment liquid onto the substrate W supported on the substrate support unit 3640 .
- the treatment liquid may be a photosensitive liquid such as photoresist.
- the treatment liquid nozzle 3662 is moved between a process position and a standby position.
- the process position is a position in which the treatment liquid nozzle 3662 is located above the substrate W supported on the substrate support unit 3640 and faces the substrate W
- the standby position is a position in which the treatment liquid nozzle 3662 deviates from the process position.
- the process position may be a position in which the treatment liquid nozzle 3362 is able to dispense the treatment liquid onto the center of the substrate W.
- the plurality of buffer chambers 3800 are provided. Some of the buffer chambers 3800 are disposed between the index module 20 and the transfer chamber 3400 . Hereinafter, these buffer chambers are referred to as the front buffers 3802 .
- the front buffers 3802 are stacked on each other along the up-down direction.
- the other buffer chambers 3800 are disposed between the transfer chamber 3400 and the interface module 40 .
- These buffer chambers are referred to as the rear buffers 3804 .
- the rear buffers 3804 are stacked on each other along the up-down direction.
- Each of the front buffers 3802 and the rear buffers 3804 temporarily stores a plurality of substrates W.
- the substrates W stored in the front buffers 3802 are loaded or unloaded by the index robot 2200 and the transfer robot 3422 .
- the substrates W stored in the rear buffers 3804 are loaded or unloaded by the transfer robot 3422 and a first robot 4602 .
- a front transfer robot is located on one side of the front buffers 3802 .
- the front transfer robot transfers the substrates W between the front buffers 3802 and the front heat treatment chamber 3202 .
- Each of the developing blocks 30 b has heat treatment chambers 3200 , a transfer chamber 3400 , and liquid treatment chambers 3600 .
- the heat treatment chambers 3200 , the transfer chamber 3400 , and the liquid treatment chambers 3600 of the developing block 30 b are provided in a structure and an arrangement substantially similar to the structure and the arrangement in which the heat treatment chambers 3200 , the transfer chamber 3400 , and the liquid treatment chambers 3600 of the coating block 30 a are provided, and therefore detailed descriptions thereabout will be omitted.
- the liquid treatment chambers 3600 are implemented with developing chambers 3600 , each of which performs a developing process on the substrate W by dispensing a developing solution onto the substrate W.
- the interface module 40 connects the treating module 30 with an external exposing apparatus 50 .
- the interface module 40 has an interface frame 4100 , an additional process chamber 4200 , an interface buffer 4400 , and a transfer member 4600 .
- the interface frame 4100 may have, at the top thereof, a fan filter unit that forms a downward air flow in the interface frame 4100 .
- the additional process chamber 4200 , the interface buffer 4400 , and the transfer member 4600 are disposed in the interface frame 4100 .
- the additional process chamber 4200 may perform a predetermined additional process on the substrate W.
- the additional process chamber 4200 may perform a predetermined additional process on the substrate W.
- the additional process may be an edge exposing process of exposing the edge region of the substrate W to light, a top-side cleaning process of cleaning the top side of the substrate W, or a backside cleaning process of cleaning the backside of the substrate W.
- a plurality of additional process chambers 4200 may be provided.
- the additional process chambers 4200 may be stacked one above another.
- the additional process chambers 4200 may all perform the same process. Selectively, some of the additional process chambers 4200 may perform different processes.
- the interface buffer 4400 provides a space in which the substrate W transferred between the coating block 30 a, the additional process chambers 4200 , the exposing apparatus 50 , and the developing block 30 b temporarily stays.
- a plurality of interface buffers 4400 may be provided.
- the interface buffers 4400 may be stacked one above another.
- the additional process chambers 4200 may be disposed on one side of an extension line facing in the lengthwise direction of the transfer chamber 3400 , and the interface buffers 4400 may be disposed on an opposite side of the extension line.
- the transfer member 4600 transfers the substrate W between the coating block 30 a, the additional process chambers 4200 , the exposing apparatus 50 , and the developing block 30 b.
- the transfer member 4600 may be implemented with one or more robots.
- the transfer member 4600 has the first robot 4602 and a second robot 4606 .
- the first robot 4602 may transfer the substrate W between the coating block 30 a, the additional process chambers 4200 , and the interface buffers 4400 .
- An interface robot 4606 may transfer the substrate W between the interface buffers 4400 and the exposing apparatus 50 .
- the second robot 4606 may transfer the substrate W between the interface buffers 4400 and the developing block 30 b.
- the first robot 4602 and the second robot 4606 each include a hand on which the substrate W is placed, and the hand is movable forward and backward, rotatable about an axis parallel to the third direction 16 , and movable along the third direction 16 .
- the hands of the index robot 2200 , the first robot 4602 , and the second robot 4606 may all have the same shape as the hand 3420 of the transfer robot 3422 .
- a hand of a robot that directly exchanges the substrate W with the transfer plate 3240 of each heat treatment chamber 3200 may have the same shape as the hand 3420 of the transfer robot 3422 , and hands of the remaining robots may have a different shape from the hand 3420 of the transfer robot 3422 .
- the index robot 2200 may directly exchange the substrate W with the heating unit 3230 of the front heat treatment chamber 3200 provided in the coating block 30 a.
- the transfer robots 3422 provided in the coating block 30 a and the developing block 30 b may directly exchange the substrate W with the transfer plate 3240 located in the heat treatment chamber 3200 .
- Coating process S 20 , edge exposing process S 40 , exposing process S 60 , and developing process S 80 are sequentially performed on the substrate W.
- Coating process S 20 is performed by sequentially performing heat treatment process S 21 in the heat treatment chamber 3200 , anti-reflection film coating process S 22 in the front liquid treatment chamber 3602 , heat treatment process S 23 in the heat treatment chamber 3200 , photoresist film coating process S 24 in the rear liquid treatment chamber 3604 , and heat treatment process S 25 in the heat treatment chamber 3200 .
- the index robot 2200 extracts the substrate W from the carrier 10 and transfers the substrate W to the front buffer 3802 .
- the transfer robot 3422 transfers the substrate W stored in the front buffer 3802 to the front heat treatment chamber 3200 .
- the substrate W is transferred to the heating unit 3230 by the transfer plate 3240 .
- the transfer plate 3240 transfers the substrate W to the cooling unit 3220 .
- the transfer plate 3240 is brought into contact with the cooling unit 3220 and performs a cooling process on the substrate W.
- the transfer plate 3240 moves above the cooling unit 3220 , and the transfer robot 3422 extracts the substrate W from the heat treatment chamber 3200 and transfers the substrate W to the front liquid treatment chamber 3602 .
- the front liquid treatment chamber 3602 coats the substrate W with an anti-reflection film.
- the transfer robot 3422 extracts the substrate W from the front liquid treatment chamber 3602 and places the substrate W in the heat treatment chamber 3200 .
- the heat treatment chamber 3200 sequentially performs the above-described heating and cooling processes. When each heat treatment process is completed, the transfer robot 3422 extracts the substrate W from the heat treatment chamber 3200 and places the substrate W in the rear liquid treatment chamber 3604 .
- the rear liquid treatment chamber 3604 coats the substrate W with a photoresist film.
- the transfer robot 3422 extracts the substrate W from the rear liquid treatment chamber 3604 and places the substrate W in the heat treatment chamber 3200 .
- the heat treatment chamber 3200 sequentially performs the above-described heating and cooling processes.
- the transfer robot 3422 transfers the substrate W to the rear buffer 3804 .
- the first robot 4602 of the interface module 40 extracts the substrate W from the rear buffer 3804 and transfers the substrate W to the additional process chamber 4200 .
- the additional process chamber 4200 performs an edge exposing process on the substrate W.
- the first robot 4602 extracts the substrate W from the additional process chamber 4200 and transfers the substrate W to the interface buffer 4400 .
- the second robot 4606 extracts the substrate W from the interface buffer 4400 and transfers the substrate W to the exposing apparatus 50 .
- Developing process S 80 is performed by sequentially performing heat treatment process S 81 in the heat treatment chamber 3200 , developing process S 82 in the liquid treatment chamber 3600 , and heat treatment process S 83 in the heat treatment chamber 3200 .
- the second robot 4606 extracts the substrate W from the exposing apparatus 50 and transfers the substrate W to the interface buffer 4400 .
- the first robot 4602 extracts the substrate W from the interface buffer 4400 and transfers the substrate W to the rear buffer 3804 .
- the transfer robot 3422 extracts the substrate W from the rear buffer 3804 and transfers the substrate W to the heat treatment chamber 3200 .
- the heat treatment chamber 3200 sequentially performs a heating process and a cooling process on the substrate W. When the cooling process is completed, the substrate W is transferred to the developing chamber 3600 by the transfer robot 3422 .
- the developing chamber 3600 performs a developing process by dispensing a developing solution onto the substrate W.
- the substrate W is extracted from the developing chamber 3600 and placed in the heat treatment chamber 3200 by the transfer robot 3422 .
- the heat treatment chamber 3200 sequentially performs a heating process and a cooling process on the substrate W.
- the substrate W is extracted from the heat treatment chamber 3200 and transferred to the front buffer 3802 by the transfer robot 3422 .
- the index robot 2200 extracts the substrate W from the front buffer 3802 and transfers the substrate W to the carrier 10 .
- the treating module 30 of the substrate treating apparatus 1 has been described as performing the coating process and the developing process.
- the substrate treating apparatus 1 may include only the index module 20 and the treating module 30 without the interface module 40 .
- the treating module 30 may perform only the coating process, and a film with which the substrate W is coated may be a spin-on hardmask (SOH) film.
- SOH spin-on hardmask
- the degree of hydrophobization of a substrate surface may be adjusted by adjusting the position of a substrate.
Abstract
Description
- A claim for priority under 35 U.S.C. § 119 is made to Korean Patent Application No. 10-2019-0137962 filed on Oct. 31, 2019, in the Korean Intellectual Property Office, the entire contents of which are hereby incorporated by reference.
- Embodiments of the inventive concept described herein relate to an apparatus and method for treating a substrate, and more particularly, relate to an apparatus and method for treating a substrate with a gas.
- Various processes, such as cleaning, deposition, photolithography, etching, ion implantation, and the like, are performed to manufacture semiconductor devices. These processes are performed in chambers having process spaces inside, respectively.
- The photolithography process includes a coating process of forming a coating film on a substrate, and surface modification of the substrate has to be performed before the coating film is formed. The surface modification is a process of modifying the property of the substrate surface to a property that is the same as, or similar to, that of the coating film. The surface modification includes a process of supplying a process gas to the surface of the substrate. For example, the coating film may have a hydrophobic property, and the process gas may include a hydrophobic gas.
- The hydrophobic gas hydrophobicizes the surface of the substrate, and the degree of hydrophobization serves as an important factor affecting the adhesion and thickness of the coating film. Accordingly, the degree of hydrophobization may be differently applied depending on the property and type of the coating film, a process, and an environment.
- However, the hydrophobic gas is a gas generated by gasifying a hydrophobic liquid, and it is difficult to adjust the flow rate of the hydrophobic gas. For example, the hydrophobic gas may be formed by supplying a vaporized gas to the hydrophobic liquid. In a case where an adjustment member such as a valve is installed to adjust the flow rate of the hydrophobic gas, the supply of the vaporized gas may be affected.
- Due to this, to differently apply the degree of hydrophobization, hydrophobization processes have to be performed in apparatuses having different environments.
- Embodiments of the inventive concept provide an apparatus and method for adjusting the degree of hydrophobization of a substrate surface.
- Furthermore, embodiments of the inventive concept provide an apparatus and method for differently applying the degree of hydrophobization of a substrate surface in the same apparatus.
- According to an exemplary embodiment, an apparatus for treating a substrate includes a chamber having a process space in which the substrate is treated, a substrate support unit that supports the substrate in the process space, a gas supply unit that supplies a hydrophobic gas onto the substrate supported on the substrate support unit, and a controller that controls the substrate support unit and the gas supply unit. The substrate support unit includes a support plate on which the substrate is placed and a pin assembly that raises the substrate off the support plate or lowers the substrate onto the support plate, and the controller controls a degree of hydrophobization of a surface of the substrate by adjusting the pin assembly.
- The controller may move a first substrate to a first height such that a surface of the first substrate has a first hydrophobic property and may move a second substrate to a second height such that a surface of the second substrate has a second hydrophobic property. The first hydrophobic property may have a higher degree of hydrophobization than the second hydrophobic property, and the first height may be closer to the gas supply unit than the second height. The gas supply unit may include a gas supply tube that supplies the hydrophobic gas into the process space and that is located over the support plate, a dispensing end of the gas supply tube may be located to overlap the support plate when viewed from above, and the first height may be closer to the dispensing end than the second height. The controller may control the gas supply unit such that a flow rate of the hydrophobic gas dispensed from the gas supply tube is constant.
- The first height may be a height at which the first substrate is spaced apart from the support plate, and the second height may be a height at which the second substrate is seated on the support plate.
- The first height may be a height at which the first substrate is spaced apart from the support plate, and the second height may be a height at which the second substrate is spaced apart from the support plate.
- According to an exemplary embodiment, a method for treating a substrate includes a first treatment step of hydrophobicizing a surface of a first substrate such that the surface of the first substrate has a first hydrophobic property, by supplying a hydrophobic gas to the first substrate and a second treatment step of hydrophobicizing a surface of a second substrate such that the surface of the second substrate has a second hydrophobic property, by supplying a hydrophobic gas to the second substrate. The first hydrophobic property and the second hydrophobic property have different degrees of hydrophobization, and a first distance between a dispensing end through which the hydrophobic gas is dispensed and the first substrate in the first treatment step is different from a second distance between the dispensing end through which the hydrophobic gas is dispensed and the second substrate in the second treatment step.
- The first hydrophobic property may have a higher degree of hydrophobization than the second hydrophobic property, and the first distance may be smaller than the second distance. The hydrophobic gas used in the first treatment step may be the same as the hydrophobic gas used in the second treatment step. The first treatment step and the second treatment step may be performed in the same chamber.
- The dispensing end through which the hydrophobic gas is dispensed may face a support plate that supports the first substrate and the second substrate and may be located to overlap the support plate when viewed from above. The dispensing end may be located to face the center of the first substrate and the center of the second substrate.
- The hydrophobic gas may be dispensed at the same flow rate in the first treatment step and the second treatment step.
- The hydrophobic gas may include a hexamethyldisilane (HMDS) gas.
- According to an exemplary embodiment, a method for treating a substrate includes hydrophobicizing a surface of the substrate by supplying a hydrophobic gas to the substrate, in which a degree of hydrophobization of the surface is adjusted by adjusting a position of the substrate.
- The adjusting of the position of the substrate may include adjusting a distance between a dispensing position in which the hydrophobic gas is dispensed and the substrate.
- The dispensing position may be located over the substrate. The degree of hydrophobization may be adjusted by moving the substrate to a first height such that the surface has a first hydrophobic property, or by moving the substrate to a second height such that the surface has a second hydrophobic property. The first height may be higher than the second height. The first hydrophobic property may have a higher degree of hydrophobization than the second hydrophobic property.
- A flow rate at which the hydrophobic gas is dispensed may be constant. The hydrophobic gas may include a hexamethyldisilane (HMDS) gas.
- The above and other objects and features will become apparent from the following description with reference to the following figures, wherein like reference numerals refer to like parts throughout the various figures unless otherwise specified, and wherein:
-
FIG. 1 is a schematic perspective view illustrating a substrate treating apparatus according to an embodiment of the inventive concept; -
FIG. 2 is a sectional view illustrating coating blocks and developing blocks of the substrate treating apparatus ofFIG. 1 ; -
FIG. 3 is a plan view illustrating the substrate treating apparatus ofFIG. 2 ; -
FIG. 4 is a view illustrating one example of a hand of a transfer robot ofFIG. 3 ; -
FIG. 5 is a schematic plan view illustrating one example of a heat treatment chamber ofFIG. 3 ; -
FIG. 6 is a front view of the heat treatment chamber ofFIG. 5 ; -
FIG. 7 is a sectional view illustrating a heating unit ofFIG. 6 . -
FIG. 8 is a plan view illustrating a substrate support unit ofFIG. 7 ; -
FIG. 9 is a flowchart illustrating a process of treating a substrate using the apparatus ofFIG. 7 ; -
FIG. 10 is a view illustrating a process of treating a first substrate in the apparatus ofFIG. 7 ; -
FIG. 11 is a view illustrating a process of treating a second substrate in the apparatus ofFIG. 7 ; and -
FIG. 12 is a schematic view illustrating one example of liquid treatment chambers ofFIG. 3 . - Hereinafter, embodiments of the inventive concept will be described in more detail with reference to the accompanying drawings. The inventive concept may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that the inventive concept will be thorough and complete, and will fully convey the scope of the inventive concept to those skilled in the art. In the drawings, the dimensions of components are exaggerated for clarity of illustration.
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FIG. 1 is a schematic perspective view illustrating a substrate treating apparatus according to an embodiment of the inventive concept.FIG. 2 is a sectional view illustrating coating blocks and developing blocks of the substrate treating apparatus ofFIG. 1 .FIG. 3 is a plan view illustrating the substrate treating apparatus ofFIG. 2 . Referring toFIGS. 1 to 3 , thesubstrate treating apparatus 1 includes anindex module 20, a treatingmodule 30, and aninterface module 40. According to an embodiment, theindex module 20, the treatingmodule 30, and theinterface module 40 are sequentially disposed in a row. Hereinafter, a direction in which theindex module 20, the treatingmodule 30, and theinterface module 40 are arranged is referred to as afirst direction 12, a direction perpendicular to thefirst direction 12 when viewed from above is referred to as asecond direction 14, and a direction perpendicular to thefirst direction 12 and thesecond direction 14 is referred to as athird direction 16. - The
index module 20 transfers substrates W fromcarriers 10 having the substrates W received therein to the treatingmodule 30 and places the completely treated substrates W in thecarriers 10. The lengthwise direction of theindex module 20 is parallel to thesecond direction 14. Theindex module 20 hasload ports 22 and anindex frame 24. Theload ports 22 are located on the opposite side to the treatingmodule 30 with respect to theindex frame 24. Thecarriers 10, each of which has the substrates W received therein, are placed on theload ports 22. Theload ports 22 may be disposed along thesecond direction 14. - Airtight carriers such as front open unified pods (FOUPs) may be used as the
carriers 10. Thecarriers 10 may be placed on theload ports 22 by a transfer unit (not illustrated) such as an overhead transfer, an overhead conveyor, or an automatic guided vehicle, or by an operator. - An
index robot 2200 is provided in theindex frame 24. Aguide rail 2300, the lengthwise direction of which is parallel to thesecond direction 14, is provided in theindex frame 24, and theindex robot 2200 is movable on theguide rail 2300. Theindex robot 2200 includeshands 2220 on which the substrates W are placed. Thehands 2220 are movable forward and backward, rotatable about an axis facing in thethird direction 16, and movable along thethird direction 16. - The treating
module 30 performs a coating process and a developing process on the substrates W. The treatingmodule 30 has the coating blocks 30 a and the developingblocks 30 b. The coating blocks 30 a perform the coating process on the substrates W, and the developingblocks 30 b perform the developing process on the substrates W. The coating blocks 30 a are stacked on each other. The developing blocks 30 b are stacked on each other. According to this embodiment, twocoating blocks 30 a and two developingblock 30 b are provided. The coating blocks 30 a may be disposed under the developingblocks 30 b. According to an embodiment, the twocoating blocks 30 a may perform the same process and may have the same structure. Furthermore, the two developingblocks 30 b may perform the same process and may have the same structure. - Each of the coating blocks 30 a has
heat treatment chambers 3200, atransfer chamber 3400,liquid treatment chambers 3600, and buffer chambers 3800. Each of theheat treatment chambers 3200 performs a heat treatment process on the substrate W. The heat treatment process may include a cooling process and a heating process. Each of theliquid treatment chambers 3600 forms a liquid film on the substrate W by dispensing a liquid onto the substrate W. The liquid film may be a photoresist film or an anti-reflection film. Thetransfer chamber 3400 transfers the substrate W between theheat treatment chamber 3200 and theliquid treatment chamber 3600 in thecoating block 30 a. - The
transfer chamber 3400 is disposed such that the lengthwise direction thereof is parallel to thefirst direction 12. Atransfer robot 3422 is provided in thetransfer chamber 3400. Thetransfer robot 3422 transfers the substrate W between theheat treatment chamber 3200, theliquid treatment chamber 3600, and the buffer chambers 3800. According to an embodiment, thetransfer robot 3422 has ahand 3420 on which the substrate W is placed, and thehand 3420 is movable forward and backward, rotatable about an axis facing in thethird direction 16, and movable along thethird direction 16. Aguide rail 3300, the lengthwise direction of which is parallel to thefirst direction 12, is provided in thetransfer chamber 3400, and thetransfer robot 3422 is movable on theguide rail 3300. -
FIG. 4 is a view illustrating one example of the hand of the transfer robot ofFIG. 3 . Referring toFIG. 4 , thehand 3420 has abase 3428 andsupport protrusions 3429. Thebase 3428 may have an annular ring shape, the circumference of which is partly curved. Thebase 3428 has an inner diameter greater than the diameter of the substrate W. Thesupport protrusions 3429 extend inward from thebase 3428. Thesupport protrusions 3429 support an edge region of the substrate W. According to an embodiment, foursupport protrusions 3429 may be provided at equal intervals. - The
heat treatment chambers 3200 are arranged along thefirst direction 12. Theheat treatment chambers 3200 are located on one side of thetransfer chamber 3400. Among theheat treatment chambers 3200, aheat treatment chamber 3202 located closest to theindex module 20 performs heat treatment on the substrate W before the substrate W is transferred to theliquid treatment chamber 3600, and the otherheat treatment chambers 3206 perform heat treatment on the substrate W treated with a liquid in theliquid treatment chamber 3600. In this embodiment, the heat treatment chamber located closest to theindex module 20 is defined as the frontheat treatment chamber 3202. - In this embodiment, the
heat treatment chamber 3202 located at the front end among the plurality ofheat treatment chambers 3200 will be described. The frontheat treatment chamber 3202 may improve adhesion of photoresist to the substrate W by supplying a process gas while heating the substrate W. The process gas modifies the surface of the substrate W. The process gas changes the surface of the substrate W from a hydrophilic surface to a hydrophobic surface. According to an embodiment, the process gas may be a hexamethyldisilane gas. The process gas is not supplied to theheat treatment chamber 3200 located at the rear end. -
FIG. 5 is a schematic plan view illustrating one example of the heat treatment chamber ofFIG. 3 , andFIG. 6 is a front view of the heat treatment chamber ofFIG. 5 . Referring toFIGS. 5 and 6 , theheat treatment chamber 3202 has ahousing 3210, acooling unit 3220, aheating unit 3230, and atransfer plate 3240. - The
housing 3210 has a substantially rectangular parallelepiped shape. Thehousing 3210 has, in a sidewall thereof, an entrance/exit opening (not illustrated) through which the substrate W enters and exits thehousing 3210. The entrance/exit opening may be maintained in an open state. Selectively, a door (not illustrated) may be provided to open and close the entrance/exit opening. Thecooling unit 3220, theheating unit 3230, and thetransfer plate 3240 are provided in thehousing 3210. Thecooling unit 3220 and theheating unit 3230 are provided side by side along thesecond direction 14. According to an embodiment, thecooling unit 3220 may be located closer to thetransfer chamber 3400 than theheating unit 3230. - The
cooling unit 3220 has acooling plate 3222. Thecooling plate 3222 may have a substantially circular shape when viewed from above. A coolingmember 3224 is provided inside thecooling plate 3222. According to an embodiment, the coolingmember 3224 may be formed inside thecooling plate 3222 and may serve as a fluid channel through which a cooling fluid flows. - The
heating unit 3230 is implemented with anapparatus 1000 that heats the substrate W to a temperature higher than the room temperature. Theheating unit 3230 heats the substrate W in an atmospheric atmosphere or in an atmosphere of reduced pressure lower than the atmospheric pressure.FIG. 7 is a sectional view illustrating the heating unit ofFIG. 6 . Referring toFIG. 7 , theheating unit 3230 includes achamber 1100, asubstrate support unit 1300, aheater unit 1400, agas supply unit 1500, and acontroller 1900. - The
chamber 1100 has aprocess space 1110 therein in which heat treatment is performed on the substrate W. Theprocess space 1110 is sealed from the outside. Thechamber 1100 includes anupper body 1120, alower body 1140, and a sealingmember 1160. - The
upper body 1120 has a container shape that is open at the bottom. Theupper body 1120 has acentral hole 1124 andperipheral holes 1122 formed in an upper wall thereof. Thecentral hole 1124 is formed in the center of theupper body 1120. Thecentral hole 1124 functions as aninlet hole 1124 through which a process gas is introduced into thechamber 1100. Theperipheral holes 1122 are used to evacuate an atmosphere in theprocess space 1110. Theperipheral holes 1122 are spaced apart from each other and are arranged to surround thecentral hole 1124. According to an embodiment, fourperipheral holes 1122 may be provided. - The
lower body 1140 has a container shape that is open at the top. Thelower body 1140 is located under theupper body 1120. Theupper body 1120 and thelower body 1140 are located to face each other in an up-down direction. Theupper body 1120 and thelower body 1140 are combined with each other to form theprocess space 1110 inside. Theupper body 1120 and thelower body 1140 are located such that the central axes thereof are aligned with each other in the up-down direction. Thelower body 1140 may have the same diameter as theupper body 1120. That is, an upper end of thelower body 1140 may be located to face a lower end of theupper body 1120. - One of the
upper body 1120 and thelower body 1140 is moved to an open position or a closed position by a liftingmember 1130, and the other is fixed in position. In this embodiment, it is exemplified that thelower body 1140 is fixed in position and theupper body 1120 is moved. The open position is a position in which theupper body 1120 and thelower body 1140 are spaced apart from each other and therefore theprocess space 1110 is open. The closed position is a position in which theprocess space 1110 is sealed from the outside by thelower body 1140 and theupper body 1120. - The sealing
member 1160 is located between theupper body 1120 and thelower body 1140. The sealingmember 1160 seals theprocess space 1110 from the outside when theupper body 1120 and thelower body 1140 are brought into contact with each other. The sealingmember 1160 may have an annular ring shape. The sealingmember 1160 may be fixedly coupled to the upper end of thelower body 1140. - The
substrate support unit 1300 supports the substrate W in theprocess space 1110.FIG. 8 is a plan view illustrating the substrate support unit ofFIG. 7 . Referring toFIGS. 7 and 8 , thesubstrate support unit 1300 is fixedly coupled to thelower body 1140. Thesubstrate support unit 1300 includes asupport plate 1320, support pins 1360, apin assembly 1340, and aguide 1380. Thesupport plate 1320 transfers, to the substrate W, heat generated from theheater unit 1400. Thesupport plate 1320 has a circular plate shape. An upper surface of thesupport plate 1320 has a larger diameter than the substrate W. Thesupport plate 1320 haspin holes 1322 and the support pins 1360 on an upper surface thereof. The pin holes 1322 are provided as spaces in which lift pins 1342 of thepin assembly 1340 are located. The support pins 1360 prevent the substrate W from making direct contact with the upper surface of thesupport plate 1320. The support pins 1360 may have a pin shape, the lengthwise direction of which is directed in the up-down direction, or may have a protrusion shape protruding upward. The support pins 1360 are fixed to a seating surface of thesupport plate 1320. Upper ends of the support pins 1360 are provided as contact surfaces making direct contact with the backside of the substrate W, and the contact surfaces have a shape that is convex upward. Accordingly, contact areas between the support pins 1360 and the substrate W may be minimized. For example, threepin holes 1322 may be provided, andmore support pins 1360 than the pin holes 1322 may be provided. - The
pin assembly 1340 raises the substrate W off thesupport plate 1320, or lowers the substrate W onto thesupport plate 1320. More specifically, thepin assembly 1340 raises the substrate W off the support pins 1360, or lowers the substrate W onto the support pins 1360. Thepin assembly 1340 includes the lift pins 1342 and an actuator (not illustrated). Asmany lift pins 1342 as the pin holes 1322 are provided. The lift pins 1342 are located in the pin holes 1322, respectively. The lift pins 1342 have a pin shape that is directed in the vertical direction. The lift pins 1342 may be moved to a raised position or a lowered position in the pin holes 1322. Here, the raised position is a position in which the lift pins 1342 protrude upward from the pin holes 1322, and the lowered position is a position in which the lift pins 1342 are inserted into the pin holes 1322. More specifically, the raised position is a position in which upper ends of the lift pins 1342 are in a higher position than an upper end of thesupport plate 1320, and the lowered position is a position in which the upper ends of the lift pins 1342 are in a lower position than the upper end of thesupport plate 1320. The lift pins 1342 are movable to two or more different heights in the raised position. The actuator (not illustrated) moves the lift pins 1342 to the raised position and the lowered position. For example, the actuator (not illustrated) may be a motor. Accordingly, the actuator (not illustrated) may adjust the heights of the lift pins 1342 in a state in which the lift pins 1342 are located in the raised position. - The
guide 1380 guides the substrate W to locate the substrate W in a correct position over the seating surface. Theguide 1380 has an annular ring shape that surrounds the seating surface. Theguide 1380 has a larger diameter than the substrate W. An inside surface of theguide 1380 has a shape downwardly inclined with an approach to the central axis of thesupport plate 1320. Accordingly, the substrate W supported on the inside surface of theguide 1380 is moved to the correct position along the inclined surface. Furthermore, theguide 1380 may slightly prevent a gas flow introduced between the substrate W and the seating surface. - The
heater unit 1400 heats the substrate W placed on thesupport plate 1320. Theheater unit 1400 is located under the substrate W placed on thesupport plate 1320. Theheater unit 1400 includes a plurality ofheaters 1420. Theheaters 1420 are located inside thesupport plate 1320. Selectively, theheaters 1420 may be located on the bottom of thesupport plate 1320. Theheaters 1420 are located on the same plane. According to an embodiment, the heaters 420 may heat different regions of the seating surface to different temperatures. Some of theheaters 1420 may heat a central region of the seating surface to a first temperature, and theother heaters 1420 may heat an edge region of the seating surface to a second temperature. The second temperature may be higher than the first temperature. Theheaters 1420 may be printed patterns or heating wires. - Referring again to
FIG. 7 , thegas supply unit 1500 includes aflow forming plate 1540 and asupply tube 1520. Theflow forming plate 1540 has a circular plate shape with an opening. Theflow forming plate 1540 is provided at a height corresponding to theupper body 1120. Thesupply tube 1520 functions as a dispensing member that dispenses the process gas onto the substrate W. Thesupply tube 1520 is inserted into thecentral hole 1124. Thesupply tube 1520 is provided such that a lower end thereof is located in theprocess space 1110 and an upper end thereof is located outside theprocess space 1110. Thesupply tube 1520 is fixedly coupled to the opening of theflow forming plate 1540. For example, theflow forming plate 1540 and thesupply tube 1520 may be integrated with each other. The position of a dispensingend 1522 that is the lower end of thesupply tube 1520 may be fixed. The bottom of theflow forming plate 1540 and the lower end of thesupply tube 1520 may be provided at the same height. Theflow forming plate 1540 divides theprocess space 1110 into anupper space 1110 a and alower space 1110 b. Thelower space 1110 b may function as a space into which the process gas is introduced to treat the substrate W, and theupper space 1110 a may function as an exhaust space through which the process gas is released. Theflow forming plate 1540 has an outer diameter that is the same as the inner diameter of theupper body 1120. Theflow forming plate 1540 has a plurality of exhaust holes 1524 formed in an edge region thereof. The exhaust holes 1542 are circumferentially arranged to surround the opening of theflow forming plate 1540. For example, when viewed from above, theexhaust holes 1542 may have a circular shape. Selectively, theexhaust holes 1542 may have an arc shape that surrounds an empty space. According to this embodiment, theexhaust holes 1542 are provided so as not to face the substrate W placed on thesubstrate support unit 1300. That is, when viewed from above, theexhaust holes 1542 may be circumferentially arranged to surround the periphery of the substrate W placed on thesubstrate support unit 1300. Process by-products passing through theexhaust holes 1542 are released to the outside throughexhaust lines 1560 connected to theperipheral holes 1122. A pressure-reducingmember 1580 is connected to theexhaust lines 1560, and the process by-products are released by exhaust pressure of the pressure-reducingmember 1580. Accordingly, interference with the supply of the process gas to the edge region of the substrate W may be minimized. For example, the process gas may be hexamethyldisilane (HMDS) for surface modification of the substrate W. The process gas may have a property that is the same as, or similar to, that of a photosensitive liquid. The photosensitive liquid may have a hydrophobic property, and the process gas may be a hydrophobic gas having a hydrophobic property. - The
controller 1900 controls thepin assembly 1340. Thecontroller 1900 controls the degree of hydrophobization of the substrate surface by adjusting the height of the substrate W. Thecontroller 1900 adjusts the height of the substrate W depending on the degree to which the surface of the substrate W is desired to be hydrophobicized. Adjusting the height of the substrate W includes adjusting the distance between the substrate W and the dispensingend 1522 of thesupply tube 1520. That is, to adjust the degree of hydrophobization of the substrate surface, thecontroller 1900 may adjust the distance between the substrate W and the dispensingend 1522. According to an embodiment, in a case of raising the degree of hydrophobization of the substrate surface, the distance between the substrate W and the dispensingend 1522 may be decreased, and in a case of lowering the degree of hydrophobization of the substrate surface, the distance between the substrate W and the dispensingend 1522 may be increased. That is, in the case of raising the degree of hydrophobization, the substrate W may be raised, and in the case of lowering the degree of hydrophobization, the substrate W may be lowered. In the case of raising the degree of hydrophobization, the lift pins 1342 may be moved to the raised position, and in the case of lowering the degree of hydrophobization, the lift pins 1342 may be moved to the lowered position. - Hereinafter, a process of treating the substrate W using the above-described apparatus will be described. Referring to
FIG. 9 , the lift pins 1342 are moved to the raised position and receive the substrate W from thetransfer robot 3422. The lift pins 1342 are moved to the lowered position such that the substrate W is placed on the support pins 1360. Thereafter, theupper body 1120 is moved from the open position to the closed position and seals theprocess space 1110 from the outside. For example, even though the substrate W is treated in a position spaced apart from thesupport plate 1320, the substrate W is lowered onto the support pins 1360 and raised again after thechamber 1100 is sealed from the outside. The aim is to prevent misalignment of the substrate W in consideration of the stability of the substrate W, when the chamber 110 is moved in a state in which the substrate W is placed on the lift pins 1342. When theprocess space 1110 is sealed from the outside, a hydrophobic gas is supplied from the dispensingend 1522 of thesupply tube 1520. The hydrophobic gas is supplied to the substrate W and hydrophobicizes the surface of the substrate W. In the process of hydrophobicizing the surface of the substrate W, the position of the substrate W is adjusted for adjustment of the degree of hydrophobization of the substrate surface. - In this embodiment, the
controller 1900 may adjust the degree of hydrophobization by adjusting the distance between the substrate W and the dispensingend 1522 by adjusting the height of the substrate W. To perform surface modification of the substrate W such that the surface of the substrate W has a first hydrophobic property or a second hydrophobic property smaller than the first hydrophobic property, the height of the substrate W may be differently adjusted. To perform surface modification of the substrate W such that the surface of the substrate W has the first hydrophobic property, the substrate W is raised off the support pins 1360 and moved upward to the first height. The first height may be a height at which the substrate W is spaced apart from the support pins 1360. Alternatively, to perform surface modification of the substrate W such that the surface of the substrate W has the second hydrophobic property, the substrate W is lowered to the second height lower than the first height. The second height may be a height at which the substrate W is spaced apart from the support pins 1360, or may be a height at which the substrate W is placed on the support pins 1360. In this embodiment, the second height is described as a height at which the substrate W is placed on the support pins 1360. At the first height, the distance between the dispensingend 1522 and the substrate W is smaller than that at the second height. Accordingly, the surface of the substrate W located at the first height may have a hydrophobic property greater than that of the surface of the substrate W located at the second height. - A method for treating a first substrate W1 and a second substrate W2 such that the first substrate W1 and the second substrate W2 have different degrees of hydrophobization will be described. In this embodiment, the first substrate W1 is treated such that a surface of the first substrate W1 has a first hydrophobic property, and the second substrate W2 is treated such that a surface of the second substrate W2 has a second hydrophobic property. In the
same chamber 1100, a hydrophobization process is performed on the first substrate W1 and the second substrate W2. - Referring to
FIGS. 10 and 11 , theprocess space 1110 is sealed from the outside, the first substrate W1 is moved to the first height by the lift pins 1342, and the second substrate W2 is located at the second height at which the second substrate W2 is placed on the support pins 1360. A hydrophobic gas is supplied at the same flow rate in a first treatment step of hydrophobicizing the first substrate W1 and a second treatment step of hydrophobicizing the second substrate W2. Furthermore, the same type of hydrophobic gas is supplied in the first treatment step and the second treatment step. Accordingly, the first substrate W1 and the second substrate W2 may have different degrees of hydrophobization even though the first treatment step and the second treatment step are performed in the same environment such as the same flow rate, the same type of hydrophobic gas, and the like. - Referring again to
FIGS. 5 and 6 , thetransfer plate 3240 has a substantially circular plate shape and has a diameter corresponding to the diameter of the substrate W. Thetransfer plate 3240 hasnotches 3244 formed at the edge thereof. Thenotches 3244 may have a shape corresponding to theprotrusions 3429 formed on thehand 3420 of thetransfer robot 3422 described above. Furthermore, asmany notches 3244 as theprotrusions 3429 formed on thehand 3420 are formed in positions corresponding to theprotrusions 3429. The substrate W is transferred between thehand 3420 and thetransfer plate 3240 when the vertical positions of thehand 3420 and thetransfer plate 3240 aligned with each other in the up-down direction are changed. Thetransfer plate 3240 may be mounted on aguide rail 3249 and may be moved between a first region 3212 and a second region 3214 along theguide rail 3249 by anactuator 3246. A plurality ofguide grooves 3242 in a slit shape are formed in thetransfer plate 3240. Theguide grooves 3242 extend inward from the edge of thetransfer plate 3240. The lengthwise direction of theguide grooves 3242 is parallel to thesecond direction 14, and theguide grooves 3242 are located to be spaced apart from each other along thefirst direction 12. Theguide grooves 3242 prevent thetransfer plate 3240 and the lift pins 1340 from interfering with each other when the substrate W is transferred between thetransfer plate 3240 and theheating unit 3230. - The substrate W is heated while the substrate W is directly placed on the
support plate 1320. The substrate W is cooled while thetransfer plate 3240 on which the substrate W is placed is brought into contact with thecooling plate 3222. For efficient heat transfer between thecooling plate 3222 and the substrate W, thetransfer plate 3240 is formed of a material having a high heat transfer rate. According to an embodiment, thetransfer plate 3240 may be formed of a metallic material. - The plurality of
liquid treatment chambers 3600 are provided. Some of theliquid treatment chambers 3600 may be stacked on each other. Theliquid treatment chambers 3600 are disposed on an opposite side of thetransfer chamber 3400. Theliquid treatment chambers 3600 are arranged side by side along thefirst direction 12. Some of theliquid treatment chambers 3600 are located adjacent to theindex module 20. Hereinafter, these liquid treatment chambers are referred to as the frontliquid treatment chambers 3602. Otherliquid treatment chambers 3600 are located adjacent to theinterface module 40. Hereinafter, these liquid treatment chambers are referred to as the rearliquid treatment chambers 3604. - Each of the front
liquid treatment chambers 3602 applies a first liquid to the substrate W, and each of the rearliquid treatment chambers 3604 applies a second liquid to the substrate W. The first liquid and the second liquid may be different types of liquids. According to an embodiment, the first liquid is an anti-reflection film, and the second liquid is photoresist. The photoresist may be applied to the substrate W coated with the anti-reflection film. Selectively, the first liquid may be photoresist, and the second liquid may be an anti-reflection film. In this case, the anti-reflection film may be applied to the substrate W coated with the photoresist. Selectively, the first liquid and the second liquid may be of the same type. Both the first liquid and the second liquid may be photoresist. -
FIG. 12 is a schematic view illustrating one example of the liquid treatment chambers ofFIG. 3 . Referring toFIG. 12 , theliquid treatment chamber 3600 has ahousing 3610, atreatment vessel 3620, asubstrate support unit 3640, and aliquid dispensing unit 3660. Thehousing 3610 has a substantially rectangular parallelepiped shape. Thehousing 3610 has, in a sidewall thereof, an entrance/exit opening (not illustrated) through which the substrate W enters and exits thehousing 3610. The entrance/exit opening may be opened and closed by a door (not illustrated). Thetreatment vessel 3620, thesubstrate support unit 3640, and theliquid dispensing unit 3660 are provided in thehousing 3610. Afan filter unit 3670 for forming a downward air flow in the housing 3260 may be provided in an upper wall of thehousing 3610. Thetreatment vessel 3620 has a cup shape that is open at the top. Thetreatment vessel 3620 has a process space therein in which the substrate W is treated. Thesubstrate support unit 3640 is disposed in the process space and supports the substrate W. Thesubstrate support unit 3640 is provided such that the substrate W is rotatable during liquid treatment. Theliquid dispensing unit 3660 dispenses a liquid onto the substrate W supported on thesubstrate support unit 3640. - The
liquid dispensing unit 3660 includes a treatment liquid nozzle 3662. The treatment liquid nozzle 3662 dispenses a treatment liquid onto the substrate W supported on thesubstrate support unit 3640. For example, the treatment liquid may be a photosensitive liquid such as photoresist. The treatment liquid nozzle 3662 is moved between a process position and a standby position. Here, the process position is a position in which the treatment liquid nozzle 3662 is located above the substrate W supported on thesubstrate support unit 3640 and faces the substrate W, and the standby position is a position in which the treatment liquid nozzle 3662 deviates from the process position. The process position may be a position in which the treatment liquid nozzle 3362 is able to dispense the treatment liquid onto the center of the substrate W. - Referring again to
FIGS. 2 and 3 , the plurality of buffer chambers 3800 are provided. Some of the buffer chambers 3800 are disposed between theindex module 20 and thetransfer chamber 3400. Hereinafter, these buffer chambers are referred to as thefront buffers 3802. Thefront buffers 3802 are stacked on each other along the up-down direction. The other buffer chambers 3800 are disposed between thetransfer chamber 3400 and theinterface module 40. These buffer chambers are referred to as therear buffers 3804. Therear buffers 3804 are stacked on each other along the up-down direction. Each of thefront buffers 3802 and therear buffers 3804 temporarily stores a plurality of substrates W. The substrates W stored in thefront buffers 3802 are loaded or unloaded by theindex robot 2200 and thetransfer robot 3422. The substrates W stored in therear buffers 3804 are loaded or unloaded by thetransfer robot 3422 and afirst robot 4602. - A front transfer robot is located on one side of the
front buffers 3802. The front transfer robot transfers the substrates W between thefront buffers 3802 and the frontheat treatment chamber 3202. - Each of the developing
blocks 30 b hasheat treatment chambers 3200, atransfer chamber 3400, andliquid treatment chambers 3600. Theheat treatment chambers 3200, thetransfer chamber 3400, and theliquid treatment chambers 3600 of the developingblock 30 b are provided in a structure and an arrangement substantially similar to the structure and the arrangement in which theheat treatment chambers 3200, thetransfer chamber 3400, and theliquid treatment chambers 3600 of thecoating block 30 a are provided, and therefore detailed descriptions thereabout will be omitted. - In the developing
block 30 b, theliquid treatment chambers 3600 are implemented with developingchambers 3600, each of which performs a developing process on the substrate W by dispensing a developing solution onto the substrate W. - The
interface module 40 connects the treatingmodule 30 with an external exposingapparatus 50. Theinterface module 40 has aninterface frame 4100, anadditional process chamber 4200, aninterface buffer 4400, and atransfer member 4600. - The
interface frame 4100 may have, at the top thereof, a fan filter unit that forms a downward air flow in theinterface frame 4100. Theadditional process chamber 4200, theinterface buffer 4400, and thetransfer member 4600 are disposed in theinterface frame 4100. Before the substrate W completely treated in thecoating block 30 a is transferred to the exposingapparatus 50, theadditional process chamber 4200 may perform a predetermined additional process on the substrate W. Selectively, before the substrate W completely treated in the exposingapparatus 50 is transferred to the developingblock 30 b, theadditional process chamber 4200 may perform a predetermined additional process on the substrate W. According to an embodiment, the additional process may be an edge exposing process of exposing the edge region of the substrate W to light, a top-side cleaning process of cleaning the top side of the substrate W, or a backside cleaning process of cleaning the backside of the substrate W. A plurality ofadditional process chambers 4200 may be provided. Theadditional process chambers 4200 may be stacked one above another. Theadditional process chambers 4200 may all perform the same process. Selectively, some of theadditional process chambers 4200 may perform different processes. - The
interface buffer 4400 provides a space in which the substrate W transferred between thecoating block 30 a, theadditional process chambers 4200, the exposingapparatus 50, and the developingblock 30 b temporarily stays. A plurality ofinterface buffers 4400 may be provided. The interface buffers 4400 may be stacked one above another. - According to an embodiment, the
additional process chambers 4200 may be disposed on one side of an extension line facing in the lengthwise direction of thetransfer chamber 3400, and theinterface buffers 4400 may be disposed on an opposite side of the extension line. - The
transfer member 4600 transfers the substrate W between thecoating block 30 a, theadditional process chambers 4200, the exposingapparatus 50, and the developingblock 30 b. Thetransfer member 4600 may be implemented with one or more robots. According to an embodiment, thetransfer member 4600 has thefirst robot 4602 and asecond robot 4606. Thefirst robot 4602 may transfer the substrate W between thecoating block 30 a, theadditional process chambers 4200, and the interface buffers 4400. Aninterface robot 4606 may transfer the substrate W between theinterface buffers 4400 and the exposingapparatus 50. Thesecond robot 4606 may transfer the substrate W between theinterface buffers 4400 and the developingblock 30 b. - The
first robot 4602 and thesecond robot 4606 each include a hand on which the substrate W is placed, and the hand is movable forward and backward, rotatable about an axis parallel to thethird direction 16, and movable along thethird direction 16. - The hands of the
index robot 2200, thefirst robot 4602, and thesecond robot 4606 may all have the same shape as thehand 3420 of thetransfer robot 3422. Selectively, a hand of a robot that directly exchanges the substrate W with thetransfer plate 3240 of eachheat treatment chamber 3200 may have the same shape as thehand 3420 of thetransfer robot 3422, and hands of the remaining robots may have a different shape from thehand 3420 of thetransfer robot 3422. - According to an embodiment, the
index robot 2200 may directly exchange the substrate W with theheating unit 3230 of the frontheat treatment chamber 3200 provided in thecoating block 30 a. - Furthermore, the
transfer robots 3422 provided in thecoating block 30 a and the developingblock 30 b may directly exchange the substrate W with thetransfer plate 3240 located in theheat treatment chamber 3200. - Hereinafter, one embodiment of a method for treating a substrate using the above-described
substrate treating apparatus 1 will be described. - Coating process S20, edge exposing process S40, exposing process S60, and developing process S80 are sequentially performed on the substrate W.
- Coating process S20 is performed by sequentially performing heat treatment process S21 in the
heat treatment chamber 3200, anti-reflection film coating process S22 in the frontliquid treatment chamber 3602, heat treatment process S23 in theheat treatment chamber 3200, photoresist film coating process S24 in the rearliquid treatment chamber 3604, and heat treatment process S25 in theheat treatment chamber 3200. - Hereinafter, one example of a transfer path of the substrate W from the
carrier 10 to the exposingapparatus 50 will be described. - The
index robot 2200 extracts the substrate W from thecarrier 10 and transfers the substrate W to thefront buffer 3802. Thetransfer robot 3422 transfers the substrate W stored in thefront buffer 3802 to the frontheat treatment chamber 3200. The substrate W is transferred to theheating unit 3230 by thetransfer plate 3240. When a heating process is completely performed on the substrate W in theheating unit 3230, thetransfer plate 3240 transfers the substrate W to thecooling unit 3220. In a state of supporting the substrate W, thetransfer plate 3240 is brought into contact with thecooling unit 3220 and performs a cooling process on the substrate W. When the cooling process is completed, thetransfer plate 3240 moves above thecooling unit 3220, and thetransfer robot 3422 extracts the substrate W from theheat treatment chamber 3200 and transfers the substrate W to the frontliquid treatment chamber 3602. - The front
liquid treatment chamber 3602 coats the substrate W with an anti-reflection film. - The
transfer robot 3422 extracts the substrate W from the frontliquid treatment chamber 3602 and places the substrate W in theheat treatment chamber 3200. Theheat treatment chamber 3200 sequentially performs the above-described heating and cooling processes. When each heat treatment process is completed, thetransfer robot 3422 extracts the substrate W from theheat treatment chamber 3200 and places the substrate W in the rearliquid treatment chamber 3604. - Thereafter, the rear
liquid treatment chamber 3604 coats the substrate W with a photoresist film. - The
transfer robot 3422 extracts the substrate W from the rearliquid treatment chamber 3604 and places the substrate W in theheat treatment chamber 3200. Theheat treatment chamber 3200 sequentially performs the above-described heating and cooling processes. When each heat treatment process is completed, thetransfer robot 3422 transfers the substrate W to therear buffer 3804. Thefirst robot 4602 of theinterface module 40 extracts the substrate W from therear buffer 3804 and transfers the substrate W to theadditional process chamber 4200. - The
additional process chamber 4200 performs an edge exposing process on the substrate W. - The
first robot 4602 extracts the substrate W from theadditional process chamber 4200 and transfers the substrate W to theinterface buffer 4400. - The
second robot 4606 extracts the substrate W from theinterface buffer 4400 and transfers the substrate W to the exposingapparatus 50. - Developing process S80 is performed by sequentially performing heat treatment process S81 in the
heat treatment chamber 3200, developing process S82 in theliquid treatment chamber 3600, and heat treatment process S83 in theheat treatment chamber 3200. - Hereinafter, one example of a transfer path of the substrate W from the exposing
apparatus 50 to thecarrier 10 will be described. - The
second robot 4606 extracts the substrate W from the exposingapparatus 50 and transfers the substrate W to theinterface buffer 4400. - The
first robot 4602 extracts the substrate W from theinterface buffer 4400 and transfers the substrate W to therear buffer 3804. Thetransfer robot 3422 extracts the substrate W from therear buffer 3804 and transfers the substrate W to theheat treatment chamber 3200. Theheat treatment chamber 3200 sequentially performs a heating process and a cooling process on the substrate W. When the cooling process is completed, the substrate W is transferred to the developingchamber 3600 by thetransfer robot 3422. - The developing
chamber 3600 performs a developing process by dispensing a developing solution onto the substrate W. - The substrate W is extracted from the developing
chamber 3600 and placed in theheat treatment chamber 3200 by thetransfer robot 3422. Theheat treatment chamber 3200 sequentially performs a heating process and a cooling process on the substrate W. When the cooling process is completed, the substrate W is extracted from theheat treatment chamber 3200 and transferred to thefront buffer 3802 by thetransfer robot 3422. - The
index robot 2200 extracts the substrate W from thefront buffer 3802 and transfers the substrate W to thecarrier 10. - The treating
module 30 of thesubstrate treating apparatus 1 has been described as performing the coating process and the developing process. However, thesubstrate treating apparatus 1 may include only theindex module 20 and the treatingmodule 30 without theinterface module 40. In this case, the treatingmodule 30 may perform only the coating process, and a film with which the substrate W is coated may be a spin-on hardmask (SOH) film. - As described above, according to the embodiments of the inventive concept, the degree of hydrophobization of a substrate surface may be adjusted by adjusting the position of a substrate.
- Furthermore, according to the embodiments of the inventive concept, in adjusting the degree of hydrophobization of a substrate surface, it is not necessary to adjust the flow rate of a hydrophobic gas.
- The above description exemplifies the inventive concept. Furthermore, the above-mentioned contents describe exemplary embodiments of the inventive concept, and the inventive concept may be used in various other combinations, changes, and environments. That is, variations or modifications can be made to the inventive concept without departing from the scope of the inventive concept that is disclosed in the specification, the equivalent scope to the written disclosures, and/or the technical or knowledge range of those skilled in the art. The written embodiments describe the best state for implementing the technical spirit of the inventive concept, and various changes required in specific applications and purposes of the inventive concept can be made. Accordingly, the detailed description of the inventive concept is not intended to restrict the inventive concept in the disclosed embodiment state. In addition, it should be construed that the attached claims include other embodiments.
- While the inventive concept has been described with reference to exemplary embodiments, it will be apparent to those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the inventive concept. Therefore, it should be understood that the above embodiments are not limiting, but illustrative.
Claims (8)
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US18/310,704 US20230288811A1 (en) | 2019-10-31 | 2023-05-02 | Apparatus and method for treating substrate |
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KR10-2019-0137962 | 2019-10-31 | ||
KR1020190137962A KR102319197B1 (en) | 2019-10-31 | 2019-10-31 | Apparatus and Method for treating substrate |
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US18/310,704 Division US20230288811A1 (en) | 2019-10-31 | 2023-05-02 | Apparatus and method for treating substrate |
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US17/084,903 Abandoned US20210132499A1 (en) | 2019-10-31 | 2020-10-30 | Apparatus and method for treating substrate |
US18/310,704 Pending US20230288811A1 (en) | 2019-10-31 | 2023-05-02 | Apparatus and method for treating substrate |
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US (2) | US20210132499A1 (en) |
JP (1) | JP7275087B2 (en) |
KR (1) | KR102319197B1 (en) |
CN (1) | CN112750729A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11404293B2 (en) * | 2019-07-18 | 2022-08-02 | Semes Co., Ltd. | Cooling unit and substrate treating apparatus including the same |
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Also Published As
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US20230288811A1 (en) | 2023-09-14 |
KR20210052796A (en) | 2021-05-11 |
KR102319197B1 (en) | 2021-11-01 |
CN112750729A (en) | 2021-05-04 |
JP7275087B2 (en) | 2023-05-17 |
JP2021072449A (en) | 2021-05-06 |
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