US20200321284A1

US20200321284A1 - Alignment mark patterns and wafer structures comprising the same

Info

Publication number: US20200321284A1
Application number: US16/373,381
Authority: US
Inventors: Jun-Che WU; Jing-Hua Chiang; Wen-Keir LIANG; Ming-Yu Chen
Original assignee: Vanguard International Semiconductor Corp
Current assignee: Vanguard International Semiconductor Corp
Priority date: 2019-04-02
Filing date: 2019-04-02
Publication date: 2020-10-08
Anticipated expiration: 2039-04-02
Also published as: US10818606B1

Abstract

An alignment mark pattern is provided. The alignment mark pattern includes a first region that includes a first line and a first space having different widths therebetween, a second region that includes a second line and a second space having different widths therebetween, a third region that includes a third line and a third space having different widths therebetween, and a fourth region that includes a fourth line and a fourth space having different widths therebetween. The first and second lines extend in a first direction. The third and fourth lines extend in a second direction perpendicular to the first direction. The first region is diagonal to the second region. The third region is diagonal to the fourth region. The third region is adjacent to the first and second regions. The fourth region is adjacent to the first and second regions.

Description

TECHNICAL FIELD

The technical field relates to an alignment mark pattern that includes various sizes of lines and spaces.

BACKGROUND

A traditional epitaxial process has a great influence on the capture of exposure signals of alignment marks. If the thickness of an epitaxial layer increases gradually during multiple epitaxial processes, the capture of the exposure signals of alignment marks by a stepper will deteriorate, which causes serious defects in the process, such as wafer rejection or overlay shift. Due to the trends of customization in the future, it is an important consideration to, for example, increase the number of epitaxial processes or increase the thickness of the epitaxial layer. However, these demands will seriously affect the stepper's ability to capture the exposure signals of alignment marks.
Currently, persons skilled in the art are trying to solve the above-mentioned problem of the inadequate capturing of exposure signals by repeatedly making a plurality of alignment marks on different epitaxial layers. However, due to the increase in the number of alignment marks, it is necessary to add a number of related lithography processes, which results in a substantial increase in production costs and the need to spend more time processing, as well as other negative results.
Therefore, development of an alignment mark pattern without re-production on layers, even in the case of multiple epitaxial processes, is desirable.

SUMMARY

In accordance with one embodiment of the invention, an alignment mark pattern is provided. The alignment mark pattern includes a first region, a second region, a third region and a fourth region. The first region includes a plurality of first lines and a plurality of first spaces which are arranged to alternate with each other and which extend in a first direction. The first line has a different width than the first space. The second region includes a plurality of second lines and a plurality of second spaces which are arranged to alternate with each other and which extend in the first direction. The second region is diagonal to the first region. The second line has a different width than the second space. The third region includes a plurality of third lines and a plurality of third spaces which are arranged to alternate with each other and which extend in a second direction. The second direction is perpendicular to the first direction. The third region is adjacent to the first region and the second region. The third line has a different width than the third space. In addition, the fourth region includes a plurality of fourth lines and a plurality of fourth spaces which are arranged to alternate with each other and which extend in the second direction. The fourth region is diagonal to the third region and adjacent to the first and second regions. The fourth line has a different width than the fourth space.
In some embodiments, the sum of the width of one first line and the width of one first space is greater than or less than the sum of the width of one second line and the width of one second space.
In some embodiments, when the sum (pitch) of the width of one first line and the width of one first space is greater than the sum (pitch) of the width of one second line and the width of one second space, the sum of the width of one first line and the width of one first space is in a range from about 11.6 μm to about 26.6 μm, and the sum of the width of one second line and the width of one second space is in a range from about 10 μm to about 25 μm. In some embodiments, when the sum of the width of one first line and the width of one first space is greater than the sum of the width of one second line and the width of one second space, the width of one first line is in a range from about 1.8 μm to about 12.8 μm, the width of one first space is in a range from about 6.3 μm to about 24.8 μm, the width of one second line is in a range from about 1 μm to about 12 μm, and the width of one second space is in a range from about 5.5 μm to about 24 μm. The width of one first space is greater than that of one first line. The width of one second space is greater than that of one second line.
In some embodiments, when the sum (pitch) of the width of one first line and the width of one first space is less than the sum (pitch) of the width of one second line and the width of one second space, the sum of the width of one first line and the width of one first space is in a range from about 10 μm to about 25 μm, and the sum of the width of one second line and the width of one second space is in a range from about 11.6 μm to about 26.6 μm. In some embodiments, when the sum of the width of one first line and the width of one first space is less than the sum of the width of one second line and the width of one second space, the width of one first line is in a range from about 1 μm to about 12 μm, the width of one first space is in a range from about 5.5 μm to about 24 μm, the width of one second line is in a range from about 1.8 μm to about 12.8 μm, and the width of one second space is in a range from about 6.3 μm to about 24.8 μm. The width of one first space is greater than that of one first line. The width of one second space is greater than that of one second line.
In some embodiments, the sum of the width of one third line and the width of one third space is greater than or less than the sum of the width of one fourth line and the width of one fourth space.
In some embodiments, when the sum (pitch) of the width of one third line and the width of one third space is greater than the sum (pitch) of the width of one fourth line and the width of one fourth space, the sum of the width of one third line and the width of one third space is in a range from about 11.6 μm to about 26.6 μm, and the sum of the width of one fourth line and the width of one fourth space is in a range from about 10 μm to about 25 μm. In some embodiments, when the sum of the width of one third line and the width of one third space is greater than the sum of the width of one fourth line and the width of one fourth space, the width of one third line is in a range from about 1.8 μm to about 12.8 μm, the width of one third space is in a range from about 6.3 μm to about 24.8 μm, the width of one fourth line is in a range from about 1 μm to about 12 μm, and the width of one fourth space is in a range from about 5.5 μm to about 24 μm. The width of one third space is greater than that of one third line. The width of one fourth space is greater than that of one fourth line.
In some embodiments, when the sum (pitch) of the width of one third line and the width of one third space is less than the sum (pitch) of the width of one fourth line and the width of one fourth space, the sum of the width of one third line and the width of one third space is in a range from about 10 μm to about 25 μm, and the sum of the width of one fourth line and the width of one fourth space is in a range from about 11.6 μm to about 26.6 μm. In some embodiments, when the sum of the width of one third line and the width of one third space is less than the sum of the width of one fourth line and the width of one fourth space, the width of one third line is in a range from about 1 μm to about 12 μm, the width of one third space is in a range from about 5.5 μm to about 24 μm, the width of one fourth line is in a range from about 1.8 μm to about 12.8 μm, and the width of one fourth space is in a range from about 6.3 μm to about 24.8 μm. The width of one third space is greater than that of one third line. The width of one fourth space is greater than that of one fourth line.
In some embodiments, the alignment mark pattern further includes a cross pattern disposed between the first region and the second region and between the third region and the fourth region. In some embodiments, the cross pattern includes a fifth line and a sixth line perpendicular to the fifth line. In some embodiments, the fifth line and the sixth line have a width which is in a range from about 3 μm to about 17 μm. In some embodiments, the fifth line and the sixth line have a length which is in a range from about 50 μm to about 100 μm.
In accordance with one embodiment of the invention, a wafer structure is provided. The wafer structure includes a wafer having a plurality of mark regions, a material layer, and a plurality of alignment mark patterns as described above. The material layer is formed on the wafer. The alignment mark patterns are disposed on the material layer and located within the respective mark regions of the wafer.
In some embodiments, the mark regions are adjacent to the edge of the wafer. In some embodiments, the material layer includes an epitaxial layer. In some embodiments, the material layer has a thickness which is in a range from about 6 μm to about 10 μm. In some embodiments, the alignment mark patterns are opposite to each other.
In the present invention, depending on the process requirements, the specific alignment mark patterns that includes an appropriate sum (pitch) of widths of single line and space (for example, the sum (pitch) of the widths of single line and space is between 10 μm and 25 μm) with various sizes of lines and spaces and the space size larger than the line size is designed to use for alignment in a semiconductor process. Different from the traditional design to make the line and space into the same size, in the present invention, the space size is designed to be larger than the line size, so that even after multiple epitaxial processes, the spaces with sufficient depth/width can accommodate more epitaxial materials therein, and the alignment mark patterns can maintain a fairly good exposure signal intensity, effectively improving the problems wherein the traditional stepper has a poor ability to capture the exposure signals of the alignment marks. These problems are caused by increasing the number of epitaxial processes or increasing the thickness of the epitaxial layer. In the present invention, there is no need to add alignment mark patterns on other layers. The subsequent alignment process can be performed continuously, which not only reduces the overall production cost but also eliminates the processing time required to conduct additional processes.
A detailed description is given in the following embodiments with reference to the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention can be more fully understood by reading the subsequent detailed description and examples with references made to the accompanying drawings, wherein:

FIG. 1 is a top view of an alignment mark pattern in accordance with one embodiment of the invention;

FIG. 2 is a top view of a wafer structure that includes alignment mark patterns in accordance with one embodiment of the invention;

FIG. 3 shows a method for verifying the relationship between alignment mark patterns that include various sizes of lines and spaces and exposure signals in accordance with one embodiment of the invention; and

FIG. 4 shows the relationship between alignment mark patterns that include various sizes of lines and spaces and exposure signals in accordance with one embodiment of the invention.

DETAILED DESCRIPTION

The following description is of the best-contemplated mode of carrying out the invention. This description is made for the purpose of illustrating the general principles of the invention and should not be taken in a limiting sense. The scope of the invention is best determined by reference to the appended claims.
Referring to FIG. 1, in accordance with one embodiment of the invention, an alignment mark pattern 10 is provided. FIG. 1 is a top view of the alignment mark pattern 10.
As shown in FIG. 1, the alignment mark pattern 10 includes a first region 12, a second region 14, a third region 16 and a fourth region 18. The first region 12 includes a plurality of first lines 20 a and a plurality of first spaces 20 b. The first spaces 20 b are respectively located between the first lines 20 a. The first lines 20 a are parallel to each other and extend in a first direction 22. Specifically, the width W1 a of the first line 20 a is different from the width W1 b of the first space 20 b. The second region 14 includes a plurality of second lines 24 a and a plurality of second spaces 24 b. The second spaces 24 b are respectively located between the second lines 24 a. The second lines 24 a are parallel to each other and extend in the first direction 22. The second region 14 is diagonal to the first region 12, and there is a specific distance Ra between the second region 14 and the first region 12. Specifically, the width W2 a of the second line 24 a is different from the width W2 b of the second space 24 b. The third region 16 includes a plurality of third lines 26 a and a plurality of third spaces 26 b. The third spaces 26 b are respectively located between the third lines 26 a. The third lines 26 a are parallel to each other and extend in a second direction 28. The second direction 28 is perpendicular to the first direction 22. The third region 16 is adjacent to the first region 12, and there is a specific distance R13 between the third region 16 and the first region 12. The third region 16 is adjacent to the second region 14, and there is a specific distance R23 between the third region 16 and the second region 14. The third region 16 and the first region 12 are arranged in the second direction 28. The third region 16 and the second region 14 are arranged in the first direction 22. Specifically, the width W3 a of the third line 26 a is different from the width W3 b of the third space 26 b. The fourth region 18 includes a plurality of fourth lines 30 a and a plurality of fourth spaces 30 b. The fourth spaces 30 b are respectively located between the fourth lines 30 a. The fourth lines 30 a are parallel to each other and extend in the second direction 28. The fourth region 18 is diagonal to the third region 16, and there is a specific distance Rb between the fourth region 18 and the third region 16. The fourth region 18 is adjacent to the first region 12, and there is a specific distance R14 between the fourth region 18 and the first region 12. The fourth region 18 is adjacent to the second region 14, and there is a specific distance R24 between the fourth region 18 and the second region 14. In addition, the fourth region 18 and the first region 12 are arranged in the first direction 22. The fourth region 18 and the second region 14 are arranged in the second direction 28. Specifically, the width W4 a of the fourth line 30 a is different from the width W4 b of the fourth space 30 b.
In some embodiments, the specific distance Ra between the second region 14 and the first region 12, the specific distance Rb between the fourth region 18 and the third region 16, the specific distance R13 between the third region 16 and the first region 12, the specific distance R14 between the fourth region 18 and the first region 12, the specific distance R23 between the third region 16 and the second region 14, and the specific distance R24 between the fourth region 18 and the second region 14 may include any proper distance to meet the specifications of the alignment mark pattern 10.
First, the structural features of each line and space within the first region 12 and the second region 14 are described.
In some embodiments, the sum (pitch) 32 of the width W1 a of one first line 20 a and the width W1 b of one first space 20 b may be greater than or less than the sum (pitch) 34 of the width W2 a of one second line 24 a and the width W2 b of one second space 24 b.
In some embodiments, when the sum 32 of the width W1 a of one first line 20 a and the width W1 b of one first space 20 b is greater than the sum 34 of the width W2 a of one second line 24 a and the width W2 b of one second space 24 b, the sum 32 of the width W1 a of one first line 20 a and the width W1 b of one first space 20 b is in a range from about 11.6 μm to about 26.6 μm, for example, 11.6 μm, 17.6 μm or 26.6 μm, and the sum 34 of the width W2 a of one second line 24 a and the width W2 b of one second space 24 b is in a range from about 10 μm to about 25 μm, for example, 10 μm, 16 μm or 25 μm. In some embodiments, when the sum 32 of the width W1 a of one first line 20 a and the width W1 b of one first space 20 b is greater than the sum 34 of the width W2 a of one second line 24 a and the width W2 b of one second space 24 b, the width W1 a of one first line 20 a is in a range from about 1.8 μm to about 12.8 μm, the width W1 b of one first space 20 b is in a range from about 6.3 μm to about 24.8 μm, the width W2 a of one second line 24 a is in a range from about 1 μm to about 12 μm, and the width W2 b of one second space 24 b is in a range from about 5.5 μm to about 24 μm. The width W1 b of one first space 20 b is greater than the width W1 a of one first line 20 a. The width W2 b of one second space 24 b is greater than the width W2 a of one second line 24 a.
In some embodiments, when the sum 32 of the width W1 a of one first line 20 a and the width W1 b of one first space 20 b is 11.6 μm, the width W1 a of one first line 20 a and the width W1 b of one first space 20 b may include any combination of sizes that is not equal to each other. For example, (1) the width W1 a of one first line 20 a is about 1.8 μm, and the width W1 b of one first space 20 b is about 9.8 μm, (2) the width W1 a of one first line 20 a is about 2.3 μm, and the width W1 b of one first space 20 b is about 9.3 μm, (3) the width W1 a of one first line 20 a is about 2.8 μm, and the width W1 b of one first space 20 b is about 8.8 μm, (4) the width W1 a of one first line 20 a is about 3.3 μm, and the width W1 b of one first space 20 b is about 8.3 μm, (5) the width W1 a of one first line 20 a is about 3.8 μm, and the width W1 b of one first space 20 b is about 7.8 μm, (6) the width W1 a of one first line 20 a is about 4.3 μm, and the width W1 b of one first space 20 b is about 7.3 μm, (7) the width W1 a of one first line 20 a is about 4.8 μm, and the width W1 b of one first space 20 b is about 6.8 μm, or (8) the width W1 a of one first line 20 a is about 5.3 μm, and the width W1 b of one first space 20 b is about 6.3 μm (the sum (pitch) 32 of the width W1 a of one first line 20 a and the width W1 b of one first space 20 b is 11.6 μm).
At this time, the sum 34 of the width W2 a of one second line 24 a and the width W2 b of one second space 24 b is 10 μm. The width W2 a of one second line 24 a and the width W2 b of one second space 24 b may include any combination of sizes that is not equal to each other. For example, (1) the width W2 a of one second line 24 a is about 1 μm, and the width W2 b of one second space 24 b is about 9 μm, (2) the width W2 a of one second line 24 a is about 1.5 μm, and the width W2 b of one second space 24 b is about 8.5 μm, (3) the width W2 a of one second line 24 a is about 2 μm, and the width W2 b of one second space 24 b is about 8 μm, (4) the width W2 a of one second line 24 a is about 2.5 μm, and the width W2 b of one second space 24 b is about 7.5 μm, (5) the width W2 a of one second line 24 a is about 3 μm, and the width W2 b of one second space 24 b is about 7 μm, (6) the width W2 a of one second line 24 a is about 3.5 μm, and the width W2 b of one second space 24 b is about 6.5 μm, (7) the width W2 a of one second line 24 a is about 4 μm, and the width W2 b of one second space 24 b is about 6 μm, or (8) the width W2 a of one second line 24 a is about 4.5 μm, and the width W2 b of one second space 24 b is about 5.5 μm (the sum (pitch) 34 of the width W2 a of one second line 24 a and the width W2 b of one second space 24 b is 10 μm). In some embodiments, the width W1 a of one first line 20 a differs from the width W2 a of one second line 24 a by about 0.8 μm. For example, the width W1 a of one first line 20 a is greater than the width W2 a of one second line 24 a by about 0.8 μm. Similarly, the width W1 b of one first space 20 b differs from the width W2 b of one second space 24 b by about 0.8 μm. For example, the width W1 b of one first space 20 b is greater than the width W2 b of one second space 24 b by about 0.8 μm.
In some embodiments, when the sum 32 of the width W1 a of one first line 20 a and the width W1 b of one first space 20 b is 17.6 μm, the width W1 a of one first line 20 a and the width W1 b of one first space 20 b may include any combination of sizes that is not equal to each other. For example, (1) the width W1 a of one first line 20 a is about 1.8 μm, and the width W1 b of one first space 20 b is about 15.8 μm, (2) the width W1 a of one first line 20 a is about 2.3 μm, and the width W1 b of one first space 20 b is about 15.3 μm, (3) the width W1 a of one first line 20 a is about 2.8 μm, and the width W1 b of one first space 20 b is about 14.8 μm, (4) the width W1 a of one first line 20 a is about 3.3 μm, and the width W1 b of one first space 20 b is about 14.3 μm, (5) the width W1 a of one first line 20 a is about 3.8 μm, and the width W1 b of one first space 20 b is about 13.8 μm, (6) the width W1 a of one first line 20 a is about 4.3 μm, and the width W1 b of one first space 20 b is about 13.3 μm, (7) the width W1 a of one first line 20 a is about 4.8 μm, and the width W1 b of one first space 20 b is about 12.8 μm, (8) the width W1 a of one first line 20 a is about 5.3 μm, and the width W1 b of one first space 20 b is about 12.3 μm, (9) the width W1 a of one first line 20 a is about 5.8 μm, and the width W1 b of one first space 20 b is about 11.8 μm, (10) the width W1 a of one first line 20 a is about 6.3 μm, and the width W1 b of one first space 20 b is about 11.3 μm, (11) the width W1 a of one first line 20 a is about 6.8 μm, and the width W1 b of one first space 20 b is about 10.8 μm, (12) the width W1 a of one first line 20 a is about 7.3 μm, and the width W1 b of one first space 20 b is about 10.3 μm, (13) the width W1 a of one first line 20 a is about 7.8 μm, and the width W1 b of one first space 20 b is about 9.8 μm, or (14) the width W1 a of one first line 20 a is about 8.3 μm, and the width W1 b of one first space 20 b is about 9.3 μm (the sum (pitch) 32 of the width W1 a of one first line 20 a and the width W1 b of one first space 20 b is 17.6 μm).
At this time, the sum 34 of the width W2 a of one second line 24 a and the width W2 b of one second space 24 b is 16 μm. The width W2 a of one second line 24 a and the width W2 b of one second space 24 b may include any combination of sizes that is not equal to each other. For example, (1) the width W2 a of one second line 24 a is about 1 μm, and the width W2 b of one second space 24 b is about 15 μm, (2) the width W2 a of one second line 24 a is about 1.5 μm, and the width W2 b of one second space 24 b is about 14.5 μm, (3) the width W2 a of one second line 24 a is about 2 μm, and the width W2 b of one second space 24 b is about 14 μm, (4) the width W2 a of one second line 24 a is about 2.5 μm, and the width W2 b of one second space 24 b is about 13.5 μm, (5) the width W2 a of one second line 24 a is about 3 μm, and the width W2 b of one second space 24 b is about 13 μm, (6) the width W2 a of one second line 24 a is about 3.5 μm, and the width W2 b of one second space 24 b is about 12.5 μm, (7) the width W2 a of one second line 24 a is about 4 μm, and the width W2 b of one second space 24 b is about 12 μm, (8) the width W2 a of one second line 24 a is about 4.5 μm, and the width W2 b of one second space 24 b is about 11.5 μm, (9) the width W2 a of one second line 24 a is about 5 μm, and the width W2 b of one second space 24 b is about 11 μm, (10) the width W2 a of one second line 24 a is about 5.5 μm, and the width W2 b of one second space 24 b is about 10.5 μm, (11) the width W2 a of one second line 24 a is about 6 μm, and the width W2 b of one second space 24 b is about 10 μm, (12) the width W2 a of one second line 24 a is about 6.5 μm, and the width W2 b of one second space 24 b is about 9.5 μm, (13) the width W2 a of one second line 24 a is about 7 μm, and the width W2 b of one second space 24 b is about 9 μm, or (14) the width W2 a of one second line 24 a is about 7.5 μm, and the width W2 b of one second space 24 b is about 8.5 μm (the sum (pitch) 34 of the width W2 a of one second line 24 a and the width W2 b of one second space 24 b is 16 μm). In some embodiments, the width W1 a of one first line 20 a differs from the width W2 a of one second line 24 a by about 0.8 μm. For example, the width W1 a of one first line 20 a is greater than the width W2 a of one second line 24 a by about 0.8 μm. Similarly, the width W1 b of one first space 20 b differs from the width W2 b of one second space 24 b by about 0.8 μm. For example, the width W1 b of one first space 20 b is greater than the width W2 b of one second space 24 b by about 0.8 μm.
In some embodiments, when the sum 32 of the width W1 a of one first line 20 a and the width W1 b of one first space 20 b is 26.6 μm, the width W1 a of one first line 20 a and the width W1 b of one first space 20 b may include any combination of sizes that is not equal to each other. For example, (1) the width W1 a of one first line 20 a is about 1.8 μm, and the width W1 b of one first space 20 b is about 24.8 μm, (2) the width W1 a of one first line 20 a is about 2.3 μm, and the width W1 b of one first space 20 b is about 24.3 μm, (3) the width W1 a of one first line 20 a is about 2.8 μm, and the width W1 b of one first space 20 b is about 23.8 μm, (4) the width W1 a of one first line 20 a is about 3.3 μm, and the width W1 b of one first space 20 b is about 23.3 μm, (5) the width W1 a of one first line 20 a is about 3.8 μm, and the width W1 b of one first space 20 b is about 22.8 μm, (6) the width W1 a of one first line 20 a is about 4.3 μm, and the width W1 b of one first space 20 b is about 22.3 μm, (7) the width W1 a of one first line 20 a is about 4.8 μm, and the width W1 b of one first space 20 b is about 21.8 μm, (8) the width W1 a of one first line 20 a is about 5.3 μm, and the width W1 b of one first space 20 b is about 21.3 μm, (9) the width W1 a of one first line 20 a is about 5.8 μm, and the width W1 b of one first space 20 b is about 20.8 μm, (10) the width W1 a of one first line 20 a is about 6.3 μm, and the width W1 b of one first space 20 b is about 20.3 μm, (11) the width W1 a of one first line 20 a is about 6.8 μm, and the width W1 b of one first space 20 b is about 19.8 μm, (12) the width W1 a of one first line 20 a is about 7.3 μm, and the width W1 b of one first space 20 b is about 19.3 μm, (13) the width W1 a of one first line 20 a is about 7.8 μm, and the width W1 b of one first space 20 b is about 18.8 μm, (14) the width W1 a of one first line 20 a is about 8.3 μm, and the width W1 b of one first space 20 b is about 18.3 μm, (15) the width W1 a of one first line 20 a is about 8.8 μm, and the width W1 b of one first space 20 b is about 17.8 μm, (16) the width W1 a of one first line 20 a is about 9.3 μm, and the width W1 b of one first space 20 b is about 17.3 μm, (17) the width W1 a of one first line 20 a is about 9.8 μm, and the width W1 b of one first space 20 b is about 16.8 μm, (18) the width W1 a of one first line 20 a is about 10.3 μm, and the width W1 b of one first space 20 b is about 16.3 μm, (19) the width W1 a of one first line 20 a is about 10.8 μm, and the width W1 b of one first space 20 b is about 15.8 μm, (20) the width W1 a of one first line 20 a is about 11.3 μm, and the width W1 b of one first space 20 b is about 15.3 μm, (21) the width W1 a of one first line 20 a is about 11.8 μm, and the width W1 b of one first space 20 b is about 14.8 μm, (22) the width W1 a of one first line 20 a is about 12.3 μm, and the width W1 b of one first space 20 b is about 14.3 μm, or (23) the width W1 a of one first line 20 a is about 12.8 μm, and the width W1 b of one first space 20 b is about 13.8 μm (the sum (pitch) 32 of the width W1 a of one first line 20 a and the width W1 b of one first space 20 b is 26.6 μm).
At this time, the sum 34 of the width W2 a of one second line 24 a and the width W2 b of one second space 24 b is 25 μm. The width W2 a of one second line 24 a and the width W2 b of one second space 24 b may include any combination of sizes that is not equal to each other. For example, (1) the width W2 a of one second line 24 a is about 1 μm, and the width W2 b of one second space 24 b is about 24 μm, (2) the width W2 a of one second line 24 a is about 1.5 μm, and the width W2 b of one second space 24 b is about 23.5 μm, (3) the width W2 a of one second line 24 a is about 2 μm, and the width W2 b of one second space 24 b is about 23 μm, (4) the width W2 a of one second line 24 a is about 2.5 μm, and the width W2 b of one second space 24 b is about 22.5 μm, (5) the width W2 a of one second line 24 a is about 3 μm, and the width W2 b of one second space 24 b is about 22 μm, (6) the width W2 a of one second line 24 a is about 3.5 μm, and the width W2 b of one second space 24 b is about 21.5 μm, (7) the width W2 a of one second line 24 a is about 4 μm, and the width W2 b of one second space 24 b is about 21 μm, (8) the width W2 a of one second line 24 a is about 4.5 μm, and the width W2 b of one second space 24 b is about 20.5 μm, (9) the width W2 a of one second line 24 a is about 5 μm, and the width W2 b of one second space 24 b is about 20 μm, (10) the width W2 a of one second line 24 a is about 5.5 μm, and the width W2 b of one second space 24 b is about 19.5 μm, (11) the width W2 a of one second line 24 a is about 6 μm, and the width W2 b of one second space 24 b is about 19 μm, (12) the width W2 a of one second line 24 a is about 6.5 μm, and the width W2 b of one second space 24 b is about 18.5 μm, (13) the width W2 a of one second line 24 a is about 7 μm, and the width W2 b of one second space 24 b is about 18 μm, (14) the width W2 a of one second line 24 a is about 7.5 μm, and the width W2 b of one second space 24 b is about 17.5 μm, (15) the width W2 a of one second line 24 a is about 8 μm, and the width W2 b of one second space 24 b is about 17 μm, (16) the width W2 a of one second line 24 a is about 8.5 μm, and the width W2 b of one second space 24 b is about 16.5 μm, (17) the width W2 a of one second line 24 a is about 9 μm, and the width W2 b of one second space 24 b is about 16 μm, (18) the width W2 a of one second line 24 a is about 9.5 μm, and the width W2 b of one second space 24 b is about 15.5 μm, (19) the width W2 a of one second line 24 a is about 10 μm, and the width W2 b of one second space 24 b is about 15 μm, (20) the width W2 a of one second line 24 a is about 10.5 μm, and the width W2 b of one second space 24 b is about 14.5 μm, (21) the width W2 a of one second line 24 a is about 11 μm, and the width W2 b of one second space 24 b is about 14 μm, (22) the width W2 a of one second line 24 a is about 11.5 μm, and the width W2 b of one second space 24 b is about 13.5 μm, or (23) the width W2 a of one second line 24 a is about 12 μm, and the width W2 b of one second space 24 b is about 13 μm (the sum (pitch) 34 of the width W2 a of one second line 24 a and the width W2 b of one second space 24 b is 25 μm). In some embodiments, the width W1 a of one first line 20 a differs from the width W2 a of one second line 24 a by about 0.8 μm. For example, the width W1 a of one first line 20 a is greater than the width W2 a of one second line 24 a by about 0.8 μm. Similarly, the width W1 b of one first space 20 b differs from the width W2 b of one second space 24 b by about 0.8 μm. For example, the width W1 b of one first space 20 b is greater than the width W2 b of one second space 24 b by about 0.8 μm.
In some embodiments, when the sum 32 of the width W1 a of one first line 20 a and the width W1 b of one first space 20 b is less than the sum 34 of the width W2 a of one second line 24 a and the width W2 b of one second space 24 b, the sum 32 of the width W1 a of one first line 20 a and the width W1 b of one first space 20 b is in a range from about 10 μm to about 25 μm, for example, 10 μm, 16 μm or 25 μm, and the sum 34 of the width W2 a of one second line 24 a and the width W2 b of one second space 24 b is in a range from about 11.6 μm to about 26.6 μm, for example, 11.6 μm, 17.6 μm or 26.6 μm. In some embodiments, when the sum 32 of the width W1 a of one first line 20 a and the width W1 b of one first space 20 b is less than the sum 34 of the width W2 a of one second line 24 a and the width W2 b of one second space 24 b, the width W1 a of one first line 20 a is in a range from about 1 μm to about 12 μm, the width W1 b of one first space 20 b is in a range from about 5.5 μm to about 24 μm, the width W2 a of one second line 24 a is in a range from about 1.8 μm to about 12.8 μm, and the width W2 b of one second space 24 b is in a range from about 6.3 μm to about 24.8 μm. The width W1 b of one first space 20 b is greater than the width W1 a of one first line 20 a. The width W2 b of one second space 24 b is greater than the width W2 a of one second line 24 a.
In some embodiments, when the sum 32 of the width W1 a of one first line 20 a and the width W1 b of one first space 20 b is 10 μm (the sum 34 of the width W2 a of one second line 24 a and the width W2 b of one second space 24 b is correspondingly 11.6 μm), the width W1 a of one first line 20 a and the width W1 b of one first space 20 b may include any combination of sizes that is not equal to each other as listed above (only the sum (pitch) 32 of the width W1 a of one first line 20 a and the width W1 b of one first space 20 b is 10 μm). Similarly, the width W2 a of one second line 24 a and the width W2 b of one second space 24 b may include any combination of sizes that is not equal to each other as listed above (only the sum (pitch) 34 of the width W2 a of one second line 24 a and the width W2 b of one second space 24 b is 11.6 μm). Various combinations of sizes are not repeated here. In some embodiments, the width W1 a of one first line 20 a differs from the width W2 a of one second line 24 a by about 0.8 μm. For example, the width W1 a of one first line 20 a is less than the width W2 a of one second line 24 a by about 0.8 μm. Similarly, the width W1 b of one first space 20 b differs from the width W2 b of one second space 24 b by about 0.8 μm. For example, the width W1 b of one first space 20 b is less than the width W2 b of one second space 24 b by about 0.8 μm.
In some embodiments, when the sum 32 of the width W1 a of one first line 20 a and the width W1 b of one first space 20 b is 16 μm (the sum 34 of the width W2 a of one second line 24 a and the width W2 b of one second space 24 b is correspondingly 17.6 μm), the width W1 a of one first line 20 a and the width W1 b of one first space 20 b may include any combination of sizes that is not equal to each other as listed above (only the sum (pitch) 32 of the width W1 a of one first line 20 a and the width W1 b of one first space 20 b is 16 μm). Similarly, the width W2 a of one second line 24 a and the width W2 b of one second space 24 b may include any combination of sizes that is not equal to each other as listed above (only the sum (pitch) 34 of the width W2 a of one second line 24 a and the width W2 b of one second space 24 b is 17.6 μm). Various combinations of sizes are not repeated here. In some embodiments, the width W1 a of one first line 20 a differs from the width W2 a of one second line 24 a by about 0.8 μm. For example, the width W1 a of one first line 20 a is less than the width W2 a of one second line 24 a by about 0.8 μm. Similarly, the width W1 b of one first space 20 b differs from the width W2 b of one second space 24 b by about 0.8 μm. For example, the width W1 b of one first space 20 b is less than the width W2 b of one second space 24 b by about 0.8 μm.
In some embodiments, when the sum 32 of the width W1 a of one first line 20 a and the width W1 b of one first space 20 b is 25 μm (the sum 34 of the width W2 a of one second line 24 a and the width W2 b of one second space 24 b is correspondingly 26.6 μm), the width W1 a of one first line 20 a and the width W1 b of one first space 20 b may include any combination of sizes that is not equal to each other as listed above (only the sum (pitch) 32 of the width W1 a of one first line 20 a and the width W1 b of one first space 20 b is 25 μm). Similarly, the width W2 a of one second line 24 a and the width W2 b of one second space 24 b may include any combination of sizes that is not equal to each other as listed above (only the sum (pitch) 34 of the width W2 a of one second line 24 a and the width W2 b of one second space 24 b is 26.6 μm). Various combinations of sizes are not repeated here. In some embodiments, the width W1 a of one first line 20 a differs from the width W2 a of one second line 24 a by about 0.8 μm. For example, the width W1 a of one first line 20 a is less than the width W2 a of one second line 24 a by about 0.8 μm. Similarly, the width W1 b of one first space 20 b differs from the width W2 b of one second space 24 b by about 0.8 μm. For example, the width W1 b of one first space 20 b is less than the width W2 b of one second space 24 b by about 0.8 μm.
Next, the structural features of each line and space within the third region 16 and the fourth region 18 are described.
In some embodiments, the sum (pitch) 36 of the width W3 a of one third line 26 a and the width W3 b of one third space 26 b may be greater than or less than the sum (pitch) 38 of the width W4 a of one fourth line 30 a and the width W4 b of one fourth space 30 b.
In some embodiments, when the sum 36 of the width W3 a of one third line 26 a and the width W3 b of one third space 26 b is greater than the sum 38 of the width W4 a of one fourth line 30 a and the width W4 b of one fourth space 30 b, the sum 36 of the width W3 a of one third line 26 a and the width W3 b of one third space 26 b is in a range from about 11.6 μm to about 26.6 μm, for example, 11.6 μm, 17.6 μm or 26.6 μm, and the sum 38 of the width W4 a of one fourth line 30 a and the width W4 b of one fourth space 30 b is in a range from about 10 μm to about 25 μm, for example, 10 μm, 16 μm or 25 μm. In some embodiments, when the sum 36 of the width W3 a of one third line 26 a and the width W3 b of one third space 26 b is greater than the sum 38 of the width W4 a of one fourth line 30 a and the width W4 b of one fourth space 30 b, the width W3 a of one third line 26 a is in a range from about 1.8 μm to about 12.8 μm, the width W3 b of one third space 26 b is in a range from about 6.3 μm to about 24.8 μm, the width W4 a of one fourth line 30 a is in a range from about 1 μm to about 12 μm, and the width W4 b of one fourth space 30 b is in a range from about 5.5 μm to about 24 μm. The width W3 b of one third space 26 b is greater than the width W3 a of one third line 26 a. The width W4 b of one fourth space 30 b is greater than the width W4 a of one fourth line 30 a.
In some embodiments, when the sum 36 of the width W3 a of one third line 26 a and the width W3 b of one third space 26 b is 11.6 μm (the sum 38 of the width W4 a of one fourth line 30 a and the width W4 b of one fourth space 30 b is correspondingly 10 μm), the width W3 a of one third line 26 a and the width W3 b of one third space 26 b may include any combination of sizes that is not equal to each other as listed above (only the sum 36 of the width W3 a of one third line 26 a and the width W3 b of one third space 26 b is 11.6 μm). Similarly, the width W4 a of one fourth line 30 a and the width W4 b of one fourth space 30 b may include any combination of sizes that is not equal to each other as listed above (only the sum 38 of the width W4 a of one fourth line 30 a and the width W4 b of one fourth space 30 b is 10 μm). Various combinations of sizes are not repeated here. In some embodiments, the width W3 a of one third line 26 a differs from the width W4 a of one fourth line 30 a by about 0.8 μm. For example, the width W3 a of one third line 26 a is greater than the width W4 a of one fourth line 30 a by about 0.8 μm. Similarly, the width W3 b of one third space 26 b differs from the width W4 b of one fourth space 30 b by about 0.8 μm. For example, the width W3 b of one third space 26 b is greater than the width W4 b of one fourth space 30 b by about 0.8 μm.
In some embodiments, when the sum 36 of the width W3 a of one third line 26 a and the width W3 b of one third space 26 b is 17.6 μm (the sum 38 of the width W4 a of one fourth line 30 a and the width W4 b of one fourth space 30 b is correspondingly 16 μm), the width W3 a of one third line 26 a and the width W3 b of one third space 26 b may include any combination of sizes that is not equal to each other as listed above (only the sum 36 of the width W3 a of one third line 26 a and the width W3 b of one third space 26 b is 17.6 μm). Similarly, the width W4 a of one fourth line 30 a and the width W4 b of one fourth space 30 b may include any combination of sizes that is not equal to each other as listed above (only the sum 38 of the width W4 a of one fourth line 30 a and the width W4 b of one fourth space 30 b is 16 μm). Various combinations of sizes are not repeated here. In some embodiments, the width W3 a of one third line 26 a differs from the width W4 a of one fourth line 30 a by about 0.8 μm. For example, the width W3 a of one third line 26 a is greater than the width W4 a of one fourth line 30 a by about 0.8 μm. Similarly, the width W3 b of one third space 26 b differs from the width W4 b of one fourth space 30 b by about 0.8 μm. For example, the width W3 b of one third space 26 b is greater than the width W4 b of one fourth space 30 b by about 0.8 μm.
In some embodiments, when the sum 36 of the width W3 a of one third line 26 a and the width W3 b of one third space 26 b is 26.6 μm (the sum 38 of the width W4 a of one fourth line 30 a and the width W4 b of one fourth space 30 b is correspondingly 25 μm), the width W3 a of one third line 26 a and the width W3 b of one third space 26 b may include any combination of sizes that is not equal to each other as listed above (only the sum 36 of the width W3 a of one third line 26 a and the width W3 b of one third space 26 b is 26.6 μm). Similarly, the width W4 a of one fourth line 30 a and the width W4 b of one fourth space 30 b may include any combination of sizes that is not equal to each other as listed above (only the sum 38 of the width W4 a of one fourth line 30 a and the width W4 b of one fourth space 30 b is 25 μm). Various combinations of sizes are not repeated here. In some embodiments, the width W3 a of one third line 26 a differs from the width W4 a of one fourth line 30 a by about 0.8 μm. For example, the width W3 a of one third line 26 a is greater than the width W4 a of one fourth line 30 a by about 0.8 μm. Similarly, the width W3 b of one third space 26 b differs from the width W4 b of one fourth space 30 b by about 0.8 μm. For example, the width W3 b of one third space 26 b is greater than the width W4 b of one fourth space 30 b by about 0.8 μm.
In some embodiments, when the sum 36 of the width W3 a of one third line 26 a and the width W3 b of one third space 26 b is less than the sum 38 of the width W4 a of one fourth line 30 a and the width W4 b of one fourth space 30 b, the sum 36 of the width W3 a of one third line 26 a and the width W3 b of one third space 26 b is in a range from about 10 μm to about 25 μm, for example, 10 μm, 16 μm or 25 μm, and the sum 38 of the width W4 a of one fourth line 30 a and the width W4 b of one fourth space 30 b is in a range from about 11.6 μm to about 26.6 μm, for example, 11.6 μm, 17.6 μm or 26.6 μm. In some embodiments, when the sum 36 of the width W3 a of one third line 26 a and the width W3 b of one third space 26 b is less than the sum 38 of the width W4 a of one fourth line 30 a and the width W4 b of one fourth space 30 b, the width W3 a of one third line 26 a is in a range from about 1 μm to about 12 μm, the width W3 b of one third space 26 b is in a range from about 5.5 μm to about 24 μm, the width W4 a of one fourth line 30 a is in a range from about 1.8 μm to about 12.8 μm, and the width W4 b of one fourth space 30 b is in a range from about 6.3 μm to about 24.8 μm. The width W3 b of one third space 26 b is greater than the width W3 a of one third line 26 a. The width W4 b of one fourth space 30 b is greater than the width W4 a of one fourth line 30 a.
In some embodiments, when the sum 36 of the width W3 a of one third line 26 a and the width W3 b of one third space 26 b is 10 μm (the sum 38 of the width W4 a of one fourth line 30 a and the width W4 b of one fourth space 30 b is correspondingly 11.6 μm), the width W3 a of one third line 26 a and the width W3 b of one third space 26 b may include any combination of sizes that is not equal to each other as listed above (only the sum 36 of the width W3 a of one third line 26 a and the width W3 b of one third space 26 b is 10 μm). Similarly, the width W4 a of one fourth line 30 a and the width W4 b of one fourth space 30 b may include any combination of sizes that is not equal to each other as listed above (only the sum 38 of the width W4 a of one fourth line 30 a and the width W4 b of one fourth space 30 b is 11.6 μm). Various combinations of sizes are not repeated here. In some embodiments, the width W3 a of one third line 26 a differs from the width W4 a of one fourth line 30 a by about 0.8 μm. For example, the width W3 a of one third line 26 a is less than the width W4 a of one fourth line 30 a by about 0.8 μm. Similarly, the width W3 b of one third space 26 b differs from the width W4 b of one fourth space 30 b by about 0.8 μm. For example, the width W3 b of one third space 26 b is less than the width W4 b of one fourth space 30 b by about 0.8 μm.
In some embodiments, when the sum 36 of the width W3 a of one third line 26 a and the width W3 b of one third space 26 b is 16 μm (the sum 38 of the width W4 a of one fourth line 30 a and the width W4 b of one fourth space 30 b is correspondingly 17.6 μm), the width W3 a of one third line 26 a and the width W3 b of one third space 26 b may include any combination of sizes that is not equal to each other as listed above (only the sum 36 of the width W3 a of one third line 26 a and the width W3 b of one third space 26 b is 16 μm). Similarly, the width W4 a of one fourth line 30 a and the width W4 b of one fourth space 30 b may include any combination of sizes that is not equal to each other as listed above (only the sum 38 of the width W4 a of one fourth line 30 a and the width W4 b of one fourth space 30 b is 17.6 μm). Various combinations of sizes are not repeated here. In some embodiments, the width W3 a of one third line 26 a differs from the width W4 a of one fourth line 30 a by about 0.8 μm. For example, the width W3 a of one third line 26 a is less than the width W4 a of one fourth line 30 a by about 0.8 μm. Similarly, the width W3 b of one third space 26 b differs from the width W4 b of one fourth space 30 b by about 0.8 μm. For example, the width W3 b of one third space 26 b is less than the width W4 b of one fourth space 30 b by about 0.8 μm.
In some embodiments, when the sum 36 of the width W3 a of one third line 26 a and the width W3 b of one third space 26 b is 25 μm (the sum 38 of the width W4 a of one fourth line 30 a and the width W4 b of one fourth space 30 b is correspondingly 26.6 μm), the width W3 a of one third line 26 a and the width W3 b of one third space 26 b may include any combination of sizes that is not equal to each other as listed above (only the sum 36 of the width W3 a of one third line 26 a and the width W3 b of one third space 26 b is 25 μm). Similarly, the width W4 a of one fourth line 30 a and the width W4 b of one fourth space 30 b may include any combination of sizes that is not equal to each other as listed above (only the sum 38 of the width W4 a of one fourth line 30 a and the width W4 b of one fourth space 30 b is 26.6 μm). Various combinations of sizes are not repeated here. In some embodiments, the width W3 a of one third line 26 a differs from the width W4 a of one fourth line 30 a by about 0.8 μm. For example, the width W3 a of one third line 26 a is less than the width W4 a of one fourth line 30 a by about 0.8 μm. Similarly, the width W3 b of one third space 26 b differs from the width W4 b of one fourth space 30 b by about 0.8 μm. For example, the width W3 b of one third space 26 b is less than the width W4 b of one fourth space 30 b by about 0.8 μm.
In some embodiments, the alignment mark pattern 10 further includes a cross pattern 40. The cross pattern 40 is disposed between the first region 12 and the second region 14 and between the third region 16 and the fourth region 18. In some embodiments, the cross pattern 40 includes a fifth line 42 and a sixth line 44. The fifth line 42 is perpendicular to the sixth line 44. In some embodiments, the width “W” of the fifth line 42 and the sixth line 44 is in a range from about 3 μm to about 17 μm. In some embodiments, the length “L” of the fifth line 42 and the sixth line 44 is in a range from about 50 μm to about 100 μm.
Referring to FIG. 2, in accordance with one embodiment of the invention, a wafer structure 100 that includes the alignment mark pattern 10 as shown in FIG. 1 is provided. FIG. 2 is a top view of the wafer structure 100 that includes the alignment mark pattern 10 of FIG. 1.
As shown in FIG. 2, the wafer structure 100 includes a wafer 102 having a plurality of mark regions 104, a material layer 106, and a plurality of alignment mark patterns 10 of FIG. 1. The material layer 106 is formed on the wafer 102. The alignment mark patterns 10 are disposed on the material layer 106 and located within the mark regions 104 of the wafer 102 respectively.
In some embodiments, the mark regions 104 are adjacent to an edge 102′ of the wafer 102. In some embodiments, the material layer 106 may include an epitaxial layer. In some embodiments, the thickness of the material layer 106 is in a range from about 6 μm to about 10 μm. In some embodiments, the alignment mark patterns 10 are opposite to each other, as shown in FIG. 2.

Example 1

Verifying the Relationship Between Alignment Mark Patterns that Include Various Sizes of Lines and Spaces and Exposure Signals
Referring to FIG. 3, a method for verifying the relationship between alignment mark patterns that include various sizes of lines and spaces and exposure signals is as follows. First, a wafer 102 is provided. Next, an 8 μm-thick epitaxial material layer 106 is formed on the wafer 102. Next, 20 sets of alignment mark patterns (10 a, 10 b, 10 c, 10 d, 10 e, 10 f, 10 g, 10 h, 10 i, 10 j, 10 k, 10 l, 10 m, 10 n, 10 o, 10 p, 10 q 10 r, 10 s and 10 t) configurated on a photomask 10′ is exposed onto the epitaxial material layer 106 and located within two mark regions 104 of the wafer 102 respectively. In this example (referring to FIG. 1), among the 20 sets of the alignment mark patterns (10 a, 10 b, 10 c, 10 d, 10 e, 10 f, 10 g, 10 h, 10 i, 10 j, 10 k, 10 l, 10 m, 10 n, 10 o, 10 p, 10 q 10 r, 10 s and 10 t), the sum (pitch) 32 of the width W1 a of one first line 20 a and the width W1 b of one first space 20 b within the first region 12 is 17.6 μm. The sum (pitch) 38 of the width W4 a of one fourth line 30 a and the width W4 b of one fourth space 30 b within the fourth region 18 is 17.6 μm. The sum (pitch) 34 of the width W2 a of one second line 24 a and the width W2 b of one second space 24 b within the second region 14 is 16 μm. The sum (pitch) 36 of the width W3 a of one third line 26 a and the width W3 b of one third space 26 b within the third region 16 is 16 μm. The size distribution of each line and space in the 20 sets of the alignment mark patterns (10 a, 10 b, 10 c, 10 d, 10 e, 10 f, 10 g, 10 h, 10 i, 10 j, 10 k, 10 l, 10 m, 10 n, 10 o, 10 p, 10 q 10 r, 10 s and 10 t) is shown in Table 1. The 20 sets of the alignment mark patterns (10 a, 10 b, 10 c, 10 d, 10 e, 10 f, 10 g, 10 h, 10 i, 10 j, 10 k, 10 l, 10 m, 10 n, 10 o, 10 p, 10 q 10 r, 10 s and 10 t) are configurated on the photomask 10′ from left to right and from top to bottom thereof.

TABLE 1

the size distribution of each line and
space in the alignment mark patterns

The first	The second	The third	The fourth
region	region	region	region
line/space	line/space	line/space	line/space

10a	1.8/15.8	1/15	1/15	1.8/15.8
10b	2.3/15.3	1.5/14.5	1.5/14.5	2.3/15.3
10c	2.8/14.8	2/14	2/14	2.8/14.8
10d	3.3/14.3	2.5/13.5	2.5/13.5	3.3/14.3
10e	3.8/13.8	3/13	3/13	3.8/13.8
10f	4.3/13.3	3.5/12.5	3.5/12.5	4.3/13.3
10g	4.8/12.8	4/12	4/12	4.8/12.8
10h	5.3/12.3	4.5/11.5	4.5/11.5	5.3/12.3
10i	5.8/11.8	5/11	5/11	5.8/11.8
10j	6.3/11.3	5.5/10.5	5.5/10.5	6.3/11.3
10k	6.8/10.8	6/10	6/10	6.8/10.8
10l	7.8/9.8	7/9	7/9	7.8/9.8
10m	8.8/8.8	8/8	8/8	8.8/8.8
10n	9.8/7.8	9/7	9/7	9.8/7.8
10o	10.8/6.8	10/6	10/6	10.8/6.8
10p	11.8/5.8	11/5	11/5	11.8/5.8
10q	12.8/4.8	12/4	12/4	12.8/4.8
10r	13.8/3.8	13/3	13/3	13.8/3.8
10s	14.8/2.8	14/2	14/2	14.8/2.8
10t	15.8/1.8	15/1	15/1	15.8/1.8

Next, a first exposure signal test is performed on the 20 sets of the alignment mark patterns (10 a, 10 b, 10 c, 10 d, 10 e, 10 f, 10 g, 10 h, 10 i, 10 j, 10 k, 10 l, 10 m, 10 n, 10 o, 10 p, 10 q 10 r, 10 s and 10 t) which are located on the epitaxial material layer 106. The variations of the measured exposure signal intensity in the first exposure signal test are presented as curve A (the depth of the spaces is about 120 nm) and curve B (the depth of the spaces is about 150 nm), as shown in FIG. 4. Next, a 6 μm-thick second epitaxial material layer (not shown) is formed on the epitaxial material layer 106. Next, a second exposure signal test is performed on the 20 sets of the alignment mark patterns (10 a, 10 b, 10 c, 10 d, 10 e, 10 f, 10 g, 10 h, 10 i, 10 j, 10 k, 10 l, 10 m, 10 n, 10 o, 10 p, 10 q 10 r, 10 s and 10 t) which are located on the epitaxial material layer 106. The variations of the measured exposure signal intensity in the second exposure signal test are presented as curve C (the depth of the spaces is about 120 nm) and curve D (the depth of the spaces is about 150 nm), as shown in FIG. 4. Next, a 2 μm-thick third epitaxial material layer (not shown) is formed on the second epitaxial material layer. Next, a third exposure signal test is performed on the 20 sets of the alignment mark patterns (10 a, 10 b, 10 c, 10 d, 10 e, 10 f, 10 g, 10 h, 10 i, 10 j, 10 k, 10 l, 10 m, 10 n, 10 o, 10 p, 10 q 10 r, 10 s and 10 t) which are located on the epitaxial material layer 106. The variations of the measured exposure signal intensity in the third exposure signal test are presented as curve E (the depth of the spaces is about 120 nm) and curve F (the depth of the spaces is about 150 nm), as shown in FIG. 4.
As seen from FIG. 4, when the second exposure signal test is performed on the 20 sets of the alignment mark patterns which are on the epitaxial material layer 106 (at this time, the alignment mark patterns are covered by the 6 μm-thick second epitaxial material layer), the 12 sets of the alignment mark patterns (10 a, 10 b, 10 c, 10 d, 10 e, 10 f, 10 g, 10 h, 10 i, 10 j, 10 k and 10 l) with various sizes of lines and spaces and the space size larger than the line size can achieve an exposure signal intensity of 1 or more. Similarly, when the third exposure signal test is performed on the 20 sets of the alignment mark patterns which are on the epitaxial material layer 106 (at this time, the alignment mark patterns are covered by the 6 μm-thick second epitaxial material layer and the 2 μm-thick third epitaxial material layer), the 12 sets of the alignment mark patterns (10 a, 10 b, 10 c, 10 d, 10 e, 10 f, 10 g, 10 h, 10 i, 10 j, 10 k and 10 l) with various sizes of lines and spaces and the space size larger than the line size can still achieve an exposure signal intensity of 1 or more. That is, the alignment mark patterns composed of specific sizes of lines and spaces provided by the present invention, despite the implementation of multiple epitaxial processes, still exhibit fairly good exposure signal strength without setting an extra alignment mark pattern to continue the subsequent alignment process.
In the present invention, depending on the process requirements, the specific alignment mark patterns that include appropriate sum (pitch) of widths of single line and space (for example, the sum (pitch) of the widths of single line and space is between 10 μm and 25 μm) with various sizes of lines and spaces and the space size larger than the line size is designed to use for alignment in a semiconductor process. Different from the traditional design to make the line and space into the same size, in the present invention, the space size is designed to be larger than the line size, so that even after multiple epitaxial processes, the spaces with sufficient depth/width can accommodate more epitaxial materials therein, and the alignment mark patterns can maintain a fairly good exposure signal intensity, effectively improving the problems with the traditional stepper having a poor ability to capture the exposure signals of the alignment marks. These problems result from increasing the number of epitaxial processes or increasing the thickness of the epitaxial layer. In the present invention, there is no need to add alignment mark patterns on other layers. The subsequent alignment process can be performed continuously, which not only reduces the overall production cost but also eliminates the processing time required to conduct additional processes.
While the invention has been described by way of example and in terms of preferred embodiment, it should be understood that the invention is not limited thereto. On the contrary, it is intended to cover various modifications and similar arrangements (as would be apparent to those skilled in the art). Therefore, the scope of the appended claims should be accorded the broadest interpretation so as to encompass all such modifications and similar arrangements.

Claims

1. An alignment mark pattern, comprising:

a first region that includes a plurality of first lines and a plurality of first spaces which are arranged to alternate with each other and which extend in a first direction, wherein one first space has a width greater than that of one first line;

a second region that includes a plurality of second lines and a plurality of second spaces which are arranged to alternate with each other and which extend in the first direction, the second region being diagonal to the first region, wherein one second space has a width greater than that of one second line;

a third region that includes a plurality of third lines and a plurality of third spaces which are arranged to alternate with each other and which extend in a second direction perpendicular to the first direction, the third region being adjacent to the first region and the second region, wherein one third space has a width greater than that of one third line; and

a fourth region that includes a plurality of fourth lines and a plurality of fourth spaces which are arranged to alternate with each other and which extend in the second direction, the fourth region being diagonal to the third region and adjacent to the first region and the second region, wherein one fourth space has a width greater than that of one fourth line.

2. The alignment mark pattern as claimed in claim 1, wherein a sum of the width of one first line and the width of one first space is greater than or less than a sum of the width of one second line and the width of one second space.

3. The alignment mark pattern as claimed in claim 2, wherein when the sum of the width of one first line and the width of one first space is greater than the sum of the width of one second line and the width of one second space, the sum of the width of one first line and the width of one first space is in a range from about 11.6 μm to about 26.6 μm, and the sum of the width of one second line and the width of one second space is in a range from about 10 μm to about 25 μm.

4. The alignment mark pattern as claimed in claim 3, wherein when the sum of the width of one first line and the width of one first space is greater than the sum of the width of one second line and the width of one second space, the width of one first line is in a range from about 1.8 μm to about 12.8 μm, the width of one first space is in a range from about 6.3 μm to about 24.8 μm, the width of one second line is in a range from about 1 μm to about 12 μm, and the width of one second space is in a range from about 5.5 μm to about 24 μm.

5. The alignment mark pattern as claimed in claim 2, wherein when the sum of the width of one first line and the width of one first space is less than the sum of the width of one second line and the width of one second space, the sum of the width of one first line and the width of one first space is in a range from about 10 μm to about 25 μm, and the sum of the width of one second line and the width of one second space is in a range from about 11.6 μm to about 26.6 μm.

6. The alignment mark pattern as claimed in claim 5, wherein when the sum of the width of one first line and the width of one first space is less than the sum of the width of one second line and the width of one second space, the width of one first line is in a range from about 1 μm to about 12 μm, the width of one first space is in a range from about 5.5 μm to about 24 μm, the width of one second line is in a range from about 1.8 μm to about 12.8 μm, and the width of one second space is in a range from about 6.3 μm to about 24.8 μm.

7. The alignment mark pattern as claimed in claim 1, wherein a sum of the width of one third line and the width of one third space is greater than or less than a sum of the width of one fourth line and the width of one fourth space.

8. The alignment mark pattern as claimed in claim 7, wherein when the sum of the width of one third line and the width of one third space is greater than the sum of the width of one fourth line and the width of one fourth space, the sum of the width of one third line and the width of one third space is in a range from about 11.6 μm to about 26.6 μm, and the sum of the width of one fourth line and the width of one fourth space is in a range from about 10 μm to about 25 μm.

9. The alignment mark pattern as claimed in claim 8, wherein when the sum of the width of one third line and the width of one third space is greater than the sum of the width of one fourth line and the width of one fourth space, the width of one third line is in a range from about 1.8 μm to about 12.8 μm, the width of one third space is in a range from about 6.3 μm to about 24.8 μm, the width of one fourth line is in a range from about 1 μm to about 12 μm, and the width of one fourth space is in a range from about 5.5 μm to about 24 μm.

10. The alignment mark pattern as claimed in claim 7, wherein when the sum of the width of one third line and the width of one third space is less than the sum of the width of one fourth line and the width of one fourth space, the sum of the width of one third line and the width of one third space is in a range from about 10 μm to about 25 μm, and the sum of the width of one fourth line and the width of one fourth space is in a range from about 11.6 μm to about 26.6 μm.

11. The alignment mark pattern as claimed in claim 10, wherein when the sum of the width of one third line and the width of one third space is less than the sum of the width of one fourth line and the width of one fourth space, the width of one third line is in a range from about 1 μm to about 12 μm, the width of one third space is in a range from about 5.5 μm to about 24 μm, the width of one fourth line is in a range from about 1.8 μm to about 12.8 μm, and the width of one fourth space is in a range from about 6.3 μm to about 24.8 μm.

12. The alignment mark pattern as claimed in claim 1, further comprising a cross pattern disposed between the first region and the second region and between the third region and the fourth region.

13. The alignment mark pattern as claimed in claim 12, wherein the cross pattern comprises a fifth line and a sixth line perpendicular to the fifth line.

14. The alignment mark pattern as claimed in claim 13, wherein the fifth line and the sixth line have a width which is in a range from about 3 μm to about 17 μm.

15. The alignment mark pattern as claimed in claim 13, wherein the fifth line and the sixth line have a length which is in a range from about 50 μm to about 100 μm.

16. A wafer structure, comprising:

a wafer having a plurality of mark regions;

a material layer formed on the wafer; and

a plurality of alignment mark patterns as claimed in claim 1 disposed on the material layer and located within the respective mark regions of the wafer.

17. The wafer structure as claimed in claim 16, wherein the mark regions are adjacent to an edge of the wafer.

18. The wafer structure as claimed in claim 16, wherein the material layer comprises an epitaxial layer.

19. The wafer structure as claimed in claim 16, wherein the material layer has a thickness which is in a range from about 6 μm to about 10 μm.

20. The wafer structure as claimed in claim 16, wherein the alignment mark patterns are opposite to each other.