US20200029441A1 - Double-Sided Circuit Non-Oxide-Based Ceramic Substrate and Method for Manufacturing Same - Google Patents
Double-Sided Circuit Non-Oxide-Based Ceramic Substrate and Method for Manufacturing Same Download PDFInfo
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0094—Filling or covering plated through-holes or blind plated vias, e.g. for masking or for mechanical reinforcement
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/115—Via connections; Lands around holes or via connections
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/388—Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
- H05K3/4076—Through-connections; Vertical interconnect access [VIA] connections by thin-film techniques
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4688—Composite multilayer circuits, i.e. comprising insulating layers having different properties
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/02—Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
- H05K2203/025—Abrading, e.g. grinding or sand blasting
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/08—Treatments involving gases
- H05K2203/082—Suction, e.g. for holding solder balls or components
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1105—Heating or thermal processing not related to soldering, firing, curing or laminating, e.g. for shaping the substrate or during finish plating
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/13—Moulding and encapsulation; Deposition techniques; Protective layers
- H05K2203/1333—Deposition techniques, e.g. coating
- H05K2203/1338—Chemical vapour deposition
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/14—Related to the order of processing steps
- H05K2203/1461—Applying or finishing the circuit pattern after another process, e.g. after filling of vias with conductive paste, after making printed resistors
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/14—Related to the order of processing steps
- H05K2203/1476—Same or similar kind of process performed in phases, e.g. coarse patterning followed by fine patterning
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/15—Position of the PCB during processing
- H05K2203/1572—Processing both sides of a PCB by the same process; Providing a similar arrangement of components on both sides; Making interlayer connections from two sides
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/244—Finish plating of conductors, especially of copper conductors, e.g. for pads or lands
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/26—Cleaning or polishing of the conductive pattern
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
- H05K3/4053—Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques
- H05K3/4061—Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques for via connections in inorganic insulating substrates
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/421—Blind plated via connections
Definitions
- the present invention relates to a double-sided circuit non-oxide-based ceramic substrate and a method for manufacturing the same.
- Patent Literature 1 there is described a method for manufacturing a ceramic via substrate that includes an electro-conductive via in a through hole of a ceramic sintered compact substrate, the through hole being for electrical conduction, the electro-conductive via being obtained by closest-packing electro-conductive metal paste in the through hole, the metal paste including a metal having a melting point of 600° C. or above and 1,100° C. or below, a metal having a melting point higher than that of the said metal, and an active metal (titanium).
- an active layer is formed in the interface between the electro-conductive via and the ceramic sintered compact substrate.
- Patent Literature 1 Japanese Unexamined Patent Application Publication No. 2012-129238
- High power laser devices have been used for the usage of healthcare, machining, wavelength conversion, and the like for example.
- the laser output of the high power laser device has risen year by year, and the heat generation amount has been increasing accompanying it. Therefore, with respect to the ceramic substrate used for the high power laser device, high heat radiation performance is required.
- the present invention has been achieved in view of the circumstances described above, and its object is to provide a double-sided circuit non-oxide-based ceramic substrate excellent in heat radiation performance and low in cost, and a method for manufacturing the same.
- the double-sided circuit non-oxide-based ceramic substrate related to the present invention includes a high heat-conductive non-oxide-based ceramic substrate, a holding layer, and an electro-conductive metal section.
- the ceramic substrate includes a through hole, the holding layer is formed on a wall surface of the through hole by oxide of silicon or alumina, and the electro-conductive metal section is held inside the through hole by the holding layer and does not include an active metal.
- the present invention it is possible to provide a double-sided circuit non-oxide-based ceramic substrate excellent in heat radiation performance and low in cost, and a method for manufacturing the same.
- FIG. 1 is a cross-sectional view that shows a double-sided circuit non-oxide-based ceramic substrate related to the present embodiment.
- FIG. 2 is a flowchart that explains contents of a method for manufacturing the double-sided circuit non-oxide-based ceramic substrate related to the present embodiment.
- FIGS. 3A to 3G are process drawings that show an aspect of the method for manufacturing the double-sided circuit non-oxide-based ceramic substrate related to the present embodiment.
- FIGS. 4A to 4G are process drawings that show another aspect of the method for manufacturing the double-sided circuit non-oxide-based ceramic substrate related to the present embodiment.
- FIG. 1 is a cross-sectional view that shows a double-sided circuit non-oxide-based ceramic substrate (may be hereinafter described simply as “double-sided circuit substrate” in the present description) related to the present embodiment.
- a double-sided circuit substrate 1 related to the present embodiment shown in FIG. 1 is applied to an integrated circuit that is mounted on a high power laser device for the usage of healthcare, machining, wavelength conversion, and the like for example.
- a high power laser device means one having the laser output of 1 W or more for example.
- the double-sided circuit substrate 1 includes a high heat-conductive non-oxide-based ceramic substrate (may be hereinafter described simply as “high heat-conductive substrate in the present description) 10 , a holding layer 20 , and an electro-conductive metal section 30 S, the ceramic substrate 10 including a through hole 11 that is for electrical conduction, the holding layer 20 being formed on a wall surface 11 a of the through hole 11 , the electro-conductive metal section 30 S being held inside the through hole 11 by the holding layer 20 , being arranged so as to fill the entirety of the through hole 11 , and not including an active metal.
- a high heat-conductive non-oxide-based ceramic substrate may be hereinafter described simply as “high heat-conductive substrate in the present description) 10
- a holding layer 20 and an electro-conductive metal section 30 S
- the ceramic substrate 10 including a through hole 11 that is for electrical conduction
- the holding layer 20 being formed on a wall surface 11 a of the through hole 11
- the electro-conductive metal section 30 S being held inside the through hole 11 by
- both ends of the through hole 11 are exposed to the surfaces (the front surface and the back surface) of the high heat-conductive substrate 10 and are shielded by electrodes (thin film electrodes 41 and 42 ).
- an active metal may be contained if the content is in a degree of inevitable impurities.
- inevitable impurities mean impurities that exist in the raw material or are inevitably mixed in the manufacturing process in the electro-conductive metal section 30 S, are essentially unnecessary, but are permitted because they are in a minute quantity and do not adversely affect the property of the electro-conductive metal section 30 S.
- As the upper limit of the content (allowable quantity of an active metal) of a degree of inevitable impurities 0.05 mass % can be cited for example.
- an active metal titanium, chromium, and the like can be cited for example.
- the high heat-conductive substrate 10 is one that becomes a base of the double-sided circuit substrate 1 , and is formed using non-oxide-based ceramic material.
- non-oxide-based ceramic material (“high heat-conductive non-oxide-based ceramic substrate” referred to in claims) forming the high heat-conductive substrate 10 can be formed using at least one kind selected from a group consisting of aluminum nitride (AlN), silicon nitride (SiN), silicon carbide (SiC), and diamond for example.
- AlN aluminum nitride
- SiN silicon nitride
- SiC silicon carbide
- diamond diamond for example.
- the heat conductivity of the high heat-conductive substrate 10 is preferable to be 80 W/(m ⁇ K) or more, is more preferable to be 100 W/(m ⁇ K) or more, is further more preferable to be 140 W/(m ⁇ K) or more, is still more preferable to be 250 W/(m ⁇ K) or more, and is most preferable to be 1,000 W/(m ⁇ K) or more.
- the heat radiation performance of the double-sided circuit substrate 1 becomes surely excellent.
- the substrate is formed using oxide-based ceramic material, because the heat conductivity is low, the substrate is inferior in the heat radiation performance.
- the method for manufacturing the high heat-conductive substrate 10 generally known manufacturing method for a sintered compact can be used.
- the high heat-conductive substrate 10 made of AlN raw material powder whose main component is AlN powder is mixed by a wet process, is thereafter added with a binder, and is mixed and dried to obtain granulated powder.
- the granulated powder is formed into a compact by a known press forming method, a CIP (Cold Isostatic Pressing) forming method, or a known forming method such as a doctor blade method that is suitable to form a sheet, an extrusion forming method, and an injection molding method.
- the high heat-conductive substrate 10 can be obtained (refer to the substrate baking step S 1 described below).
- the high heat-conductive substrate 10 includes the through holes 11 that penetrate a sheet-like member of the high heat-conductive substrate 10 from one surface side (the front surface side) to the other surface side (the back surface side). Further, the number of forming the through holes 11 is not limited to the number shown in FIG. 1 ( 2 positions), and may be 1 position or 3 positions or more. For example, when the high heat-conductive substrate 10 is applied to an integrated circuit of a high power laser device, the through holes 11 having the diameter of approximately 0.1 mm are formed.
- the holding layer 20 is formed on the wall surface (the peripheral wall surface, the inner wall surface) 11 a of the through hole 11 . Also, it is preferable that the holding layer 20 is formed on the entire wall surface 11 a of the through hole 11 so that one end in the axial direction of the through hole 11 extends to one surface side (the front surface side 10 a ) of the high heat-conductive substrate 10 and that the other end in the axial direction of the through hole 11 extends to the other surface side (the back surface side 10 b ) of the high heat-conductive substrate 10 . Further, the holding layer 20 is formed so as to closely adhere to the wall surface 11 a of the through hole 11 .
- the holding layer 20 it is preferable to form the holding layer 20 using oxide of silicon for example.
- oxide of silicon it is preferable to form the holding layer 20 using silicon dioxide (SiO 2 ).
- SiO 2 silicon dioxide
- the holding layer 20 can be formed by optional material as far as the holding layer 20 can be formed so as to closely adhere to the wall surface 11 a of the through hole 11 and the oxygen-rich state that allows to join with the electro-conductive metal section 30 S can be formed on the surface.
- the holding layer 20 can be formed using oxide of aluminum for example, or, to be more specific, alumina (Al 2 O 3 ).
- the electro-conductive metal section 30 S is obtained by baking an electro-conductive metal paste 30 (refer to FIG. 3D , FIG. 4D ) that contains tin (Sn) for example.
- an electro-conductive metal paste 30 As the electro-conductive metal paste 30 , it is possible to use a paste including an Ag—Sn-based alloy having the main component of silver (Ag) and containing Sn, a paste including a Cu—Sn-based alloy having the main component of copper (Cu) and containing Sn, and so on. In terms of the electro-conductivity, a paste including Ag and Cu is preferable.
- the electro-conductive metal paste 30 is a paste including an Ag—Sn-based alloy for example, it is preferable to use one with 90 mass % of Ag and 3-8 mass % of Sn.
- the electro-conductive metal paste 30 is not limited to those described above, and can also use an alloy that contains at least one of Au, Ag, and Cu and Sn of a paste including an Au—Sn-based alloy, a paste including an Ag—Cu—Sn-based alloy, and so on. Further, the electro-conductive metal paste 30 does not include an active metal such as titanium and chromium in order to prevent oxidation at the time of baking.
- both ends of the holding layer 20 and both ends of the electro-conductive metal section 30 S formed on the wall surface 11 a of the through hole 11 are exposed to the surfaces (the front surface and the back surface) of the high heat-conductive substrate 10 and are shielded by the electrodes (the thin film electrodes 41 and 42 ).
- the thin film electrodes 41 and 42 are arranged so as to be in contact with the electro-conductive metal section 30 S.
- the surface of the high heat-conductive substrate 10 , the both ends of the holing layer 20 , and both end surfaces of the electro-conductive metal section 30 S are formed so as to be flush with each other, and are configured to form a flat surface (a smooth surface).
- the thin film electrodes 41 and 42 are formed of 3 layers of a titanium thin film, a platinum thin film, and a gold thin film for example. Further, the thin film electrodes 41 and 42 are not limited to have 3 layers, and may have 2 layers or less, or 4 layers or more. The thin film electrodes 41 and 42 can be formed to have the thickness of 0.1 to 5 ⁇ m for example. However, the present embodiment is not limited to it, and it is also possible to employ electrodes thicker than the thin film electrodes 41 and 42 (the thickness of 5 to 100 ⁇ m for example).
- the double-sided circuit substrate 1 related to the present embodiment includes the high heat-conductive substrate 10 , the holing layer 20 , and the electro-conductive metal section 30 S, the high heat-conductive substrate 10 including the through hole 11 , the holing layer 20 being formed on the wall surface 11 a of the through hole 11 , the electro-conductive metal section 30 S being held inside the through hole 11 by the holding layer 20 and not including an active metal.
- the double-sided circuit substrate 1 because the holing layer 20 is formed on the wall surface 11 a of the through hole 11 , when the through hole 11 is filled with the electro-conductive metal paste 30 and baking is performed, the electro-conductive metal section 30 S and the high heat-conductive substrate 10 can be bonded to each other.
- the electro-conductive metal paste 30 does not include an active metal, baking under a high vacuum environment using a high vacuum furnace and so on is not required, and manufacturing is possible at a low cost (this point will be described below).
- FIG. 2 is a flowchart that explains contents of a method for manufacturing the double-sided circuit substrate related to the present embodiment.
- FIGS. 3A to 3G are process drawings that show an aspect of the method for manufacturing the double-sided circuit substrate related to the present embodiment.
- FIGS. 4A to 4G are process drawings that show another aspect of the method for manufacturing the double-sided circuit substrate related to the present embodiment.
- the present manufacturing method includes a substrate baking step S 1 , a piercing step S 2 , and a holding layer forming step S 3 .
- a substrate baking step S 1 a piercing step S 2 , and a holding layer forming step S 3 .
- the present manufacturing method includes a filling step S 4 , an electro-conductive metal section forming step S 5 , and a polishing step S 6 .
- the present manufacturing method includes an electrode shielding step S 7 . By executing this step, it is possible to manufacture the double-sided circuit substrate 1 that is formed with the electrodes.
- FIG. 3A shows the substrate baking step S 1 that is shown in FIG. 2 .
- the substrate baking step S 1 non-oxide-based ceramic material formed into a sheet shape is baked, and the high heat-conductive substrate 10 is manufactured.
- This high heat-conductive substrate 10 is in a state before forming the through holes 11 .
- the non-oxide-based ceramic material one described above can be used, and the non-oxide-based ceramic material can be formed into a sheet shape by a general method.
- the sheet thickness of the high heat-conductive substrate 10 may be approximately 0.5 mm for example.
- FIG. 3B shows the piercing step S 2 that is shown in FIG. 2 .
- predetermined positions of the high heat-conductive substrate 10 are pierced, and the penetrated through holes 11 are formed.
- the through holes 11 shown in FIG. 3B are formed by laser machining or blast machining.
- the diameter of the through hole 11 can be made smaller compared to the blast machining.
- the diameter of the through hole 11 can be made equal from the front surface to the back surface of the high heat-conductive substrate 10 .
- a dummy sheet (fitting plate) 100 in FIG. 3B is a sheet that is fitted to the back surface of the high heat-conductive substrate 10 which is on the opposite side of the laser irradiation side in the laser machining.
- FIG. 3C shows the holding layer forming step S 3 that is shown in FIG. 2 .
- the holding layer 20 is formed at least on the wall surface 11 a of the through hole 11 .
- the double-sided circuit substrate 1 related to intermediate material 10 C can be manufactured.
- the holding layer 20 can be formed also using oxide of aluminum and so on.
- the method for forming the holding layer 20 on the wall surface 11 a a known gas-phase process such as sputtering, CVD (Chemical Vapor Deposition), ion plating, and the like for example can be applied.
- the film thickness of the holding layer 20 is not particularly limited, and only has to be of such degree that oxygen is attached to the wall surface 11 a , namely approximately 1 ⁇ m for example.
- the holding layer 20 can be formed on the entire wall surface 11 a of the through hole 11 . Also, in FIGS. 3A to 3G , such aspect is shown that the holding layer 20 is formed by sputtering, CVD, ion plating, and the like not only on the wall surface 11 a but also in a position other than the through hole 11 of the high heat-conductive substrate 10 .
- FIG. 3D shows the filling step S 4 that is shown in FIG. 2 .
- the through hole 11 where the holding layer 20 is formed in the holding layer forming step S 3 is filled with the electro-conductive metal paste 30 .
- a method for filling the through hole 11 with the electro-conductive metal paste 30 it is possible to apply a general method such as a screen printing method for example.
- the electro-conductive metal paste 30 when the diameter of the through hole 11 is small, the viscosity of the electro-conductive metal paste 30 is high, and it is hard to fill the through hole 11 with the electro-conductive metal paste 30 , at the time of screen printing, a mesh-shape sheet material is fitted to the opposite side of the side for printing the through hole 11 , the electro-conductive metal paste 30 is sucked by a suction device through the mesh-shape sheet material, and thereby the electro-conductive metal paste 30 can be filled to the entire hole from one end to the other end in the axial direction of the through hole 11 . Further, by printing the electro-conductive metal paste 30 , filling is executed in a state the electro-conductive metal paste 30 slightly protrudes from the through hole 11 .
- FIG. 3E shows the electro-conductive metal section forming step S 5 that is shown in FIG. 2 .
- the high heat-conductive substrate 10 after the filling step S 4 is baked, and the electro-conductive metal paste 30 is made the electro-conductive metal section 30 S.
- Baking of the high heat-conductive substrate 10 is executed under an atmospheric environment using a reflow furnace for example.
- the reflow furnace when the high heat-conductive substrate 10 shown in FIG. 3D is charged, the high heat-conductive substrate 10 is discharged from the reflow furnace after going through a pre-heating step, a reflow step, and a cooling step which are not illustrated.
- the high heat-conductive substrate 10 is not required to be baked under a vacuum environment, and can be baked using a device that is used under an atmospheric environment, the device being of lower cost compared to a high vacuum furnace.
- the heating condition is properly set according to the kind of the high heat-conductive substrate 10 , the kind of the electro-conductive metal paste 30 , and so on.
- the heating condition when the electro-conductive metal paste 30 is a paste including an Ag—Sn-based alloy for example, setting to approximately 860° C. can be cited. By doing so, solvent, binder and the like included in the electro-conductive metal paste 30 can be vaporized/removed.
- the high heat-conductive substrate 10 is formed of a non-oxide-based ceramic material such as AlN, the high heat-conductive substrate 10 does not basically adhere to the electro-conductive metal paste 30 (the electro-conductive metal section 30 S) of an Ag—Sn-based alloy and the like.
- the holding layer 20 is formed on the wall surface 11 a of the through hole 11 in the step of FIG. 3C , predetermined atoms included in the holding layer 20 and predetermined atoms in the electro-conductive metal paste 30 are combined to each other to form a chemical compound.
- an oxygen atom (O) included in the holding layer 20 and Sn for example in the electro-conductive metal paste 30 are combined to each other to form tin oxide (SnO). Because a tight interface by inter-atom bonding of the chemical compound (SnO) thus formed is formed, the electro-conductive metal section 30 S is adhered (bonded) to the high heat-conductive substrate 10 , and is held within the through hole 11 .
- FIG. 3F shows the polishing step S 6 that is shown in FIG. 2 .
- one side surface (a front side surface 10 a ) and the other side surface (a back side surface 10 b ) of the high heat-conductive substrate 10 including the electro-conductive metal section 30 S are polished.
- end surfaces 20 a and 20 b of the holding layer 20 and end surfaces 30 a and 30 b of the electro-conductive metal section 30 S held inside the through hole 11 by the holding layer 20 are exposed to the front side surface 10 a and the back side surface 10 b of the high heat-conductive substrate 10 respectively (are preferably polished so as to become smooth).
- polishing step S 6 mechanical polishing is executed in both front and back surfaces of the high heat-conductive substrate 10 .
- polishing is executed for finishing the front side surface 10 a and the back side surface 10 b of the high heat-conductive substrate 10 (the holding layer 20 and the electro-conductive metal section 30 S) having been ground to become smooth. Further, this polishing step S 6 is executed to such degree that the holding layer 20 having been shielded by the surfaces (the front side surface 10 a and the back side surface 10 b ) of the high heat-conductive substrate 10 is removed and the high heat-conductive substrate 10 is exposed.
- the grinding agent powder of the diamond slurry, the alumina slurry, and the like for example is used.
- a smooth surface is is formed which includes the front side surface 10 a of the high heat-conductive substrate 10 , the end surface 20 a of one end side of the holding layer 20 , and the end surface 30 a of one end side of the electro-conductive metal section 30 S.
- a smooth surface 1 t is formed which includes the back side surface 10 b of the high heat-conductive substrate 10 , the end surface 20 b of the other end side of the holding layer 20 , and the end surface 30 b of the other end side of the electro-conductive metal section 30 S.
- FIG. 3G shows the electrode shielding step S 7 that is shown in FIG. 2 .
- the electrode shielding step S 7 thin film metallization is executed. That is to say, in this step, after the polishing step S 6 , the end surfaces 20 a , 20 b of the holding layer 20 and the end surfaces 30 a , 30 b of the electro-conductive metal section 30 S having been exposed are shielded by the electrodes (the thin film electrodes 41 and 42 ).
- the end surface 30 a of one end side of the electro-conductive metal section 30 S exposed to the smooth surface is of the front side of the high heat-conductive substrate 10 is shielded by the thin film electrode 41 along with the end surface 20 a of one end side of the holding layer 20 and a part of the front side surface 10 a of the high heat-conductive substrate 10 .
- the end surface 30 b of the other end side of the electro-conductive metal section 30 S exposed to the smooth surface 1 t of the back side is shielded by the thin film electrode 42 along with the end surface 20 b of the other end side of the holding layer 20 and a part of the back side surface 10 b of the high heat-conductive substrate 10 .
- the thin film electrodes 41 and 42 are formed of 3 layers of a titanium thin film, a platinum thin film, and a gold thin film for example as described above.
- the thin film electrode 41 of the front side and the thin film electrode 42 of the back side can be made conductive to each other through the electro-conductive metal section 30 S that is formed in the through hole 11 .
- known methods that can execute thin film metallization can be applied to the electrode shielding step S 7 .
- FIG. 4A shows the substrate baking step S 1 that is shown in FIG. 2 .
- the substrate baking step S 1 can be executed similarly to the explanation that was made referring to FIG. 3A , and a high heat-conductive substrate 10 A is thereby manufactured.
- FIG. 4B shows the piercing step S 2 that is shown in FIG. 2 .
- the non-penetrated hole 12 is formed in the high heat-conductive substrate 10 A.
- the non-penetrated hole 12 is formed by laser machining and blast machining. In the laser machining, by controlling the output (W) and the irradiation time, the hole 12 is formed which has a peripheral surface (side surface) 12 a and a bottom surface 12 b and not penetrates to the back side surface 10 b (refer to FIG. 4F ) of the high heat-conductive substrate 10 A.
- the diameter of the non-penetrated hole 12 can be made small, and the diameter of the non-penetrated hole 12 can be formed to be equal from the opening to the bottom.
- the blast machining shot blast, sand blast, and the like can be applied.
- FIG. 4B when piercing is executed by this aspect, because it is not required to penetrate the hole, the dummy plate 100 that was required in FIG. 3B can be made unnecessary, and the cost incurred in manufacturing can be reduced.
- FIG. 4C shows the holding layer forming step S 3 that is shown in FIG. 2 .
- the double-sided circuit substrate 1 related to the intermediate material 10 C can be manufactured.
- the holding layer forming step S 3 can be executed similarly to the explanation that was made referring to FIG. 3C .
- the holding layer 20 is formed on the peripheral surface 12 a and the bottom surface 12 b of the non-penetrated hole 12 .
- the bottom surface 12 b is to be removed by the polishing step S 6 described below, it is also possible to be configured that the holding layer 20 is formed only on the peripheral surface 12 a excluding the bottom surface 12 b.
- FIG. 4D shows the filling step S 4 that is shown in FIG. 2 .
- the filling step S 4 can be executed similarly to the explanation that was made referring to FIG. 3D .
- the non-penetrated hole 12 is formed. Accordingly, because fitting of the mesh-shape member from the opposite side of the hole and the suction device as explained in FIG. 3D are not required, the cost incurred in manufacturing can be reduced.
- the electro-conductive metal paste 30 does not leak from the opposite side of the non-penetrated hole 12 , it is easier to fill the non-penetrated hole 12 with the electro-conductive metal paste 30 .
- the filling step S 4 can be executed quickly by ordinary screen printing that does not use the mesh and the suction device.
- a range T shown by a single dot chain line in FIG. 4D shows a range used as the product.
- FIG. 4E shows the electro-conductive metal section forming step S 5 that is shown in FIG. 2 .
- the electro-conductive metal section forming step S 5 can be executed similarly to the explanation that was made referring to FIG. 3E .
- FIG. 4F shows the polishing step S 6 that is shown in FIG. 2 .
- the polishing step S 6 similarly to the explanation that was made referring to FIG. 3F , the front side surface 10 a and the back side surface 10 b of the high heat-conductive substrate 10 A including the electro-conductive metal section 30 S are polished. However, here, with respect to the back side surface 10 b where the non-penetrated hole 12 is not formed, the high heat-conductive substrate 10 A is polished until the electro-conductive metal section 30 S is exposed.
- polishing step S 6 after executing rough grinding of both of the front and back surfaces of the high heat-conductive substrate 10 A, polishing is executed for finishing the front side surface 10 a and the back side surface 10 b of the high heat-conductive substrate 10 A (including the holding layer 20 and the electro-conductive metal section 30 S) having been ground to become smooth. Also, this polishing step S 6 is executed until the holding layer 20 shielding the surface (the front side surface 10 a and the back side surface 10 b ) of the high heat-conductive substrate 10 A is removed and the surface of the high heat-conductive substrate 10 A is exposed in the front side surface 10 a , and until the electro-conductive metal section 30 S is exposed in the back side surface 10 b.
- the smooth surface is is formed which includes the front side surface 10 a of the high heat-conductive substrate 10 A, the end surface 20 a of one end side of the holding layer 20 , and the end surface 30 a of one end side of the electro-conductive metal section 30 S.
- the smooth surface 1 t is formed which includes the back side surface 10 b of the high heat-conductive substrate 10 A, the end surface 20 b of the other end side of the holding layer 20 , and the end surface 30 b of the other end side of the electro-conductive metal section 30 S.
- FIG. 4G shows the electrode shielding step S 7 that is shown in FIG. 2 .
- the electrode shielding step S 7 can be executed similarly to the explanation that was made referring to FIG. 3G .
- the filling step S 4 can be executed quickly by ordinary screen printing that does not use the mesh and the suction device.
- the double-sided circuit substrate 1 includes the high heat-conductive substrate 10 ( 10 A) having the through hole 11 , the holding layer 20 formed on the wall surface 11 a of the through hole 11 , and the electro-conductive metal section 30 S held inside the through hole 11 by the holding layer 20 .
- the double-sided circuit substrate 1 has excellent radiation property because the high heat-conductive substrate 10 ( 10 A) is formed using the high heat-conductive non-oxide-based ceramic material. Further, the double-sided circuit substrate 1 can rigidly hold the electro-conductive metal section 30 S within the through hole 11 by arranging the holding layer 20 in the through hole 11 . Since this electro-conductive metal section 30 S does not include an active metal, it is not required to be baked under a vacuum environment using a high vacuum furnace and the like in the manufacturing step, and the electro-conductive metal section 30 S can be manufactured at a low cost.
- the smooth surfaces 1 s , 1 t which are obtained by polishing the end surfaces 30 a , 30 b of both ends of the electro-conductive metal section 30 S and the end surfaces 20 a , 20 b of both ends of the holding layer 20 , and the electro-conductive metal section 30 S exposed to the smooth surfaces 1 s , 1 t is shielded by the thin film electrodes 41 and 42 (refer to FIG. 1 , FIG. 3G , and FIG. 4G ).
- the double-sided circuit substrate 1 can be used as a ceramic substrate for double-sided mounting.
- the double-sided circuit substrate 1 can be used properly for a high power laser device.
- the present invention is not limited to the embodiments described above, and various modifications are further included.
- explanation was made exemplifying the high heat-conductive substrate 10 and 10 A for double-sided mounting in the embodiments described above, it may also be configured to use the double-sided circuit substrate 1 in a multi-layered style.
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Abstract
Description
- The present invention relates to a double-sided circuit non-oxide-based ceramic substrate and a method for manufacturing the same.
- In
Patent Literature 1, there is described a method for manufacturing a ceramic via substrate that includes an electro-conductive via in a through hole of a ceramic sintered compact substrate, the through hole being for electrical conduction, the electro-conductive via being obtained by closest-packing electro-conductive metal paste in the through hole, the metal paste including a metal having a melting point of 600° C. or above and 1,100° C. or below, a metal having a melting point higher than that of the said metal, and an active metal (titanium). In the method, an active layer is formed in the interface between the electro-conductive via and the ceramic sintered compact substrate. - High power laser devices have been used for the usage of healthcare, machining, wavelength conversion, and the like for example. The laser output of the high power laser device has risen year by year, and the heat generation amount has been increasing accompanying it. Therefore, with respect to the ceramic substrate used for the high power laser device, high heat radiation performance is required.
- Also, according to the manufacturing method described in
Patent Literature 1, because the electro-conductive metal paste including an active metal (titanium) is used as described above, it is required to execute baking under a vacuum environment by using a high vacuum furnace and so on in constructing the electro-conductive via. Therefore, it is concerned that the cost increases in the manufacturing method described inPatent Literature 1. - The present invention has been achieved in view of the circumstances described above, and its object is to provide a double-sided circuit non-oxide-based ceramic substrate excellent in heat radiation performance and low in cost, and a method for manufacturing the same.
- The double-sided circuit non-oxide-based ceramic substrate related to the present invention includes a high heat-conductive non-oxide-based ceramic substrate, a holding layer, and an electro-conductive metal section. The ceramic substrate includes a through hole, the holding layer is formed on a wall surface of the through hole by oxide of silicon or alumina, and the electro-conductive metal section is held inside the through hole by the holding layer and does not include an active metal.
- According to the present invention, it is possible to provide a double-sided circuit non-oxide-based ceramic substrate excellent in heat radiation performance and low in cost, and a method for manufacturing the same.
- Problems, configurations (means), and effects other than those described above will be clarified by explanation of embodiments described below.
-
FIG. 1 is a cross-sectional view that shows a double-sided circuit non-oxide-based ceramic substrate related to the present embodiment. -
FIG. 2 is a flowchart that explains contents of a method for manufacturing the double-sided circuit non-oxide-based ceramic substrate related to the present embodiment. -
FIGS. 3A to 3G are process drawings that show an aspect of the method for manufacturing the double-sided circuit non-oxide-based ceramic substrate related to the present embodiment. -
FIGS. 4A to 4G are process drawings that show another aspect of the method for manufacturing the double-sided circuit non-oxide-based ceramic substrate related to the present embodiment. - Below, embodiments of the present invention will be explained in detail referring to the drawings. Also, in each drawing, common constituent elements will be marked with a same reference sign, and duplicated explanation will be omitted. Further, there is a case that the size and the shape of a member may be modified or exaggerated to be expressed schematically for the sake of convenience of explanation.
-
FIG. 1 is a cross-sectional view that shows a double-sided circuit non-oxide-based ceramic substrate (may be hereinafter described simply as “double-sided circuit substrate” in the present description) related to the present embodiment. A double-sided circuit substrate 1 related to the present embodiment shown inFIG. 1 is applied to an integrated circuit that is mounted on a high power laser device for the usage of healthcare, machining, wavelength conversion, and the like for example. Also, in the present embodiment, a high power laser device means one having the laser output of 1 W or more for example. - As shown in
FIG. 1 , the double-sided circuit substrate 1 includes a high heat-conductive non-oxide-based ceramic substrate (may be hereinafter described simply as “high heat-conductive substrate in the present description) 10, aholding layer 20, and an electro-conductive metal section 30S, theceramic substrate 10 including a throughhole 11 that is for electrical conduction, theholding layer 20 being formed on awall surface 11 a of the throughhole 11, the electro-conductive metal section 30S being held inside the throughhole 11 by theholding layer 20, being arranged so as to fill the entirety of the throughhole 11, and not including an active metal. Also, with respect to the double-sided circuit substrate 1, both ends of the throughhole 11 are exposed to the surfaces (the front surface and the back surface) of the high heat-conductive substrate 10 and are shielded by electrodes (thin film electrodes 41 and 42). Also, with regard to “not including an active metal”, although it is ideal not to include an active metal (the content is 0 mass %), an active metal may be contained if the content is in a degree of inevitable impurities. Here, inevitable impurities mean impurities that exist in the raw material or are inevitably mixed in the manufacturing process in the electro-conductive metal section 30S, are essentially unnecessary, but are permitted because they are in a minute quantity and do not adversely affect the property of the electro-conductive metal section 30S. As the upper limit of the content (allowable quantity of an active metal) of a degree of inevitable impurities, 0.05 mass % can be cited for example. As an active metal, titanium, chromium, and the like can be cited for example. - The high heat-
conductive substrate 10 is one that becomes a base of the double-sided circuit substrate 1, and is formed using non-oxide-based ceramic material. Such non-oxide-based ceramic material (“high heat-conductive non-oxide-based ceramic substrate” referred to in claims) forming the high heat-conductive substrate 10 can be formed using at least one kind selected from a group consisting of aluminum nitride (AlN), silicon nitride (SiN), silicon carbide (SiC), and diamond for example. Particularly, in the present embodiment, it is preferable to be the high heat-conductive substrate 10 that is formed using AlN, SiC, diamond, and the like because the heat conductivity is high and the mechanical strength and the insulation performance are also high. Here, the heat conductivity of the high heat-conductive substrate 10 is preferable to be 80 W/(m·K) or more, is more preferable to be 100 W/(m·K) or more, is further more preferable to be 140 W/(m·K) or more, is still more preferable to be 250 W/(m·K) or more, and is most preferable to be 1,000 W/(m·K) or more. By doing so, the heat radiation performance of the double-sided circuit substrate 1 becomes surely excellent. On the other hand, when the substrate is formed using oxide-based ceramic material, because the heat conductivity is low, the substrate is inferior in the heat radiation performance. - Also, with respect the method for manufacturing the high heat-
conductive substrate 10, generally known manufacturing method for a sintered compact can be used. For example, in the case of the high heat-conductive substrate 10 made of AlN, raw material powder whose main component is AlN powder is mixed by a wet process, is thereafter added with a binder, and is mixed and dried to obtain granulated powder. Thereafter, the granulated powder is formed into a compact by a known press forming method, a CIP (Cold Isostatic Pressing) forming method, or a known forming method such as a doctor blade method that is suitable to form a sheet, an extrusion forming method, and an injection molding method. Thereafter, by subjecting the compact to degreasing of the forming binder and baking, the high heat-conductive substrate 10 can be obtained (refer to the substrate baking step S1 described below). - Also, the high heat-
conductive substrate 10 includes the throughholes 11 that penetrate a sheet-like member of the high heat-conductive substrate 10 from one surface side (the front surface side) to the other surface side (the back surface side). Further, the number of forming the throughholes 11 is not limited to the number shown inFIG. 1 (2 positions), and may be 1 position or 3 positions or more. For example, when the high heat-conductive substrate 10 is applied to an integrated circuit of a high power laser device, the throughholes 11 having the diameter of approximately 0.1 mm are formed. - The
holding layer 20 is formed on the wall surface (the peripheral wall surface, the inner wall surface) 11 a of the throughhole 11. Also, it is preferable that theholding layer 20 is formed on theentire wall surface 11 a of the throughhole 11 so that one end in the axial direction of thethrough hole 11 extends to one surface side (thefront surface side 10 a) of the high heat-conductive substrate 10 and that the other end in the axial direction of thethrough hole 11 extends to the other surface side (theback surface side 10 b) of the high heat-conductive substrate 10. Further, theholding layer 20 is formed so as to closely adhere to thewall surface 11 a of the throughhole 11. - Also, it is preferable to form the
holding layer 20 using oxide of silicon for example. In concrete terms, it is preferable to form theholding layer 20 using silicon dioxide (SiO2). Thus, thewall surface 11 a of the throughhole 11 becomes in an oxygen-rich state, and the bonding force of theholding layer 20 and the electro-conductive metal section 30S can be enhanced. Also, theholding layer 20 can be formed by optional material as far as theholding layer 20 can be formed so as to closely adhere to thewall surface 11 a of the throughhole 11 and the oxygen-rich state that allows to join with the electro-conductive metal section 30S can be formed on the surface. From such viewpoint, theholding layer 20 can be formed using oxide of aluminum for example, or, to be more specific, alumina (Al2O3). - The electro-
conductive metal section 30S is obtained by baking an electro-conductive metal paste 30 (refer toFIG. 3D ,FIG. 4D ) that contains tin (Sn) for example. As the electro-conductive metal paste 30, it is possible to use a paste including an Ag—Sn-based alloy having the main component of silver (Ag) and containing Sn, a paste including a Cu—Sn-based alloy having the main component of copper (Cu) and containing Sn, and so on. In terms of the electro-conductivity, a paste including Ag and Cu is preferable. When the electro-conductive metal paste 30 is a paste including an Ag—Sn-based alloy for example, it is preferable to use one with 90 mass % of Ag and 3-8 mass % of Sn. Also, the electro-conductive metal paste 30 is not limited to those described above, and can also use an alloy that contains at least one of Au, Ag, and Cu and Sn of a paste including an Au—Sn-based alloy, a paste including an Ag—Cu—Sn-based alloy, and so on. Further, the electro-conductive metal paste 30 does not include an active metal such as titanium and chromium in order to prevent oxidation at the time of baking. - As described above, with respect to the double-
sided circuit substrate 1, both ends of the holdinglayer 20 and both ends of the electro-conductive metal section 30S formed on thewall surface 11 a of the throughhole 11 are exposed to the surfaces (the front surface and the back surface) of the high heat-conductive substrate 10 and are shielded by the electrodes (thethin film electrodes 41 and 42). Also, thethin film electrodes conductive metal section 30S. Further, the surface of the high heat-conductive substrate 10, the both ends of theholing layer 20, and both end surfaces of the electro-conductive metal section 30S are formed so as to be flush with each other, and are configured to form a flat surface (a smooth surface). Thus, it is easy to overlay thethin film electrodes conductive metal section 30S on the surface of the high heat-conductive substrate 10, and to form a circuit pattern. - Also, the
thin film electrodes thin film electrodes thin film electrodes thin film electrodes 41 and 42 (the thickness of 5 to 100 μm for example). - As described above, the double-
sided circuit substrate 1 related to the present embodiment includes the high heat-conductive substrate 10, theholing layer 20, and the electro-conductive metal section 30S, the high heat-conductive substrate 10 including the throughhole 11, theholing layer 20 being formed on thewall surface 11 a of the throughhole 11, the electro-conductive metal section 30S being held inside the throughhole 11 by the holdinglayer 20 and not including an active metal. Thus, with respect to the double-sided circuit substrate 1, because theholing layer 20 is formed on thewall surface 11 a of the throughhole 11, when the throughhole 11 is filled with the electro-conductive metal paste 30 and baking is performed, the electro-conductive metal section 30S and the high heat-conductive substrate 10 can be bonded to each other. Also, with respect to the double-sided circuit substrate 1 related to the present embodiment, because the electro-conductive metal paste 30 does not include an active metal, baking under a high vacuum environment using a high vacuum furnace and so on is not required, and manufacturing is possible at a low cost (this point will be described below). - Next, a method for manufacturing a double-sided circuit substrate related to the present embodiment will be explained.
-
FIG. 2 is a flowchart that explains contents of a method for manufacturing the double-sided circuit substrate related to the present embodiment.FIGS. 3A to 3G are process drawings that show an aspect of the method for manufacturing the double-sided circuit substrate related to the present embodiment.FIGS. 4A to 4G are process drawings that show another aspect of the method for manufacturing the double-sided circuit substrate related to the present embodiment. - As shown in
FIG. 2 , the present manufacturing method includes a substrate baking step S1, a piercing step S2, and a holding layer forming step S3. By executing the steps up to here in this order, it is possible to manufacture the double-sided circuit substrate 1 related to an intermediate material 10C (refer toFIG. 3C andFIG. 4C ) described below. - Also, continuing to the holding layer forming step S3 described above, the present manufacturing method includes a filling step S4, an electro-conductive metal section forming step S5, and a polishing step S6. By executing the steps up to here in this order, it is possible to manufacture the double-
sided circuit substrate 1 of a stage before forming electrodes. - Also, continuing to the polishing step S6 described above, the present manufacturing method includes an electrode shielding step S7. By executing this step, it is possible to manufacture the double-
sided circuit substrate 1 that is formed with the electrodes. - Here, with respect to the aspect of piercing by the piercing step S2, because the contents up to completion of the double-
sided circuit substrate 1 differs to some extent according to whether the high heat-conductive substrate 10 has the penetrated through holes 11 (refer toFIGS. 3A to 3G ) or the non-penetrated through holes 11 (non-penetrated holes 12, refer toFIGS. 4A to 4G ), explanation will be made individually referring toFIGS. 3A to 3G andFIGS. 4A to 4G . - First, an aspect of piercing by the piercing step S2 will be explained for a case of the penetrated through
holes 11 referring toFIGS. 3A to 3G . - In the process drawings of
FIGS. 3A to 3G , the process is executed in the order of 3A→3B→3C→3D→3E→3F→3G. Also, explanation will be hereinafter made with the definition that the upper side in the drawing of the high heat-conductive substrate 10 as the front side and the lower side in the drawing as the back side. -
FIG. 3A shows the substrate baking step S1 that is shown inFIG. 2 . In the substrate baking step S1, non-oxide-based ceramic material formed into a sheet shape is baked, and the high heat-conductive substrate 10 is manufactured. This high heat-conductive substrate 10 is in a state before forming the through holes 11. With respect to the non-oxide-based ceramic material, one described above can be used, and the non-oxide-based ceramic material can be formed into a sheet shape by a general method. The sheet thickness of the high heat-conductive substrate 10 may be approximately 0.5 mm for example. -
FIG. 3B shows the piercing step S2 that is shown inFIG. 2 . In this piercing step S2, predetermined positions of the high heat-conductive substrate 10 are pierced, and the penetrated throughholes 11 are formed. The through holes 11 shown inFIG. 3B are formed by laser machining or blast machining. In the laser machining, the diameter of the throughhole 11 can be made smaller compared to the blast machining. Also, in the laser machining, the diameter of the throughhole 11 can be made equal from the front surface to the back surface of the high heat-conductive substrate 10. With respect to the blast machining, shot blast, sand blast, and the like can be applied. Also, a dummy sheet (fitting plate) 100 inFIG. 3B is a sheet that is fitted to the back surface of the high heat-conductive substrate 10 which is on the opposite side of the laser irradiation side in the laser machining. -
FIG. 3C shows the holding layer forming step S3 that is shown inFIG. 2 . In the holding layer forming step S3, the holdinglayer 20 is formed at least on thewall surface 11 a of the throughhole 11. By executing this holding layer forming step S3, the double-sided circuit substrate 1 related to intermediate material 10C can be manufactured. Although it is preferable to form theholding layer 20 using oxide of silicon as described above, the holdinglayer 20 can be formed also using oxide of aluminum and so on. - As the method for forming the holding
layer 20 on thewall surface 11 a, a known gas-phase process such as sputtering, CVD (Chemical Vapor Deposition), ion plating, and the like for example can be applied. Also, the film thickness of the holdinglayer 20 is not particularly limited, and only has to be of such degree that oxygen is attached to thewall surface 11 a, namely approximately 1 μm for example. - Further, by performing sputtering, CVD, ion plating, and the like from the both surfaces (the front surface and the back surface) of the high heat-
conductive substrate 10, the holdinglayer 20 can be formed on theentire wall surface 11 a of the throughhole 11. Also, inFIGS. 3A to 3G , such aspect is shown that the holdinglayer 20 is formed by sputtering, CVD, ion plating, and the like not only on thewall surface 11 a but also in a position other than the throughhole 11 of the high heat-conductive substrate 10. -
FIG. 3D shows the filling step S4 that is shown inFIG. 2 . In the filling step S4, the throughhole 11 where the holdinglayer 20 is formed in the holding layer forming step S3 is filled with the electro-conductive metal paste 30. As a method for filling the throughhole 11 with the electro-conductive metal paste 30, it is possible to apply a general method such as a screen printing method for example. Also, when the diameter of the throughhole 11 is small, the viscosity of the electro-conductive metal paste 30 is high, and it is hard to fill the throughhole 11 with the electro-conductive metal paste 30, at the time of screen printing, a mesh-shape sheet material is fitted to the opposite side of the side for printing the throughhole 11, the electro-conductive metal paste 30 is sucked by a suction device through the mesh-shape sheet material, and thereby the electro-conductive metal paste 30 can be filled to the entire hole from one end to the other end in the axial direction of the throughhole 11. Further, by printing the electro-conductive metal paste 30, filling is executed in a state the electro-conductive metal paste 30 slightly protrudes from the throughhole 11. -
FIG. 3E shows the electro-conductive metal section forming step S5 that is shown inFIG. 2 . In the electro-conductive metal section forming step S5, the high heat-conductive substrate 10 after the filling step S4 is baked, and the electro-conductive metal paste 30 is made the electro-conductive metal section 30S. Baking of the high heat-conductive substrate 10 is executed under an atmospheric environment using a reflow furnace for example. In the reflow furnace, when the high heat-conductive substrate 10 shown inFIG. 3D is charged, the high heat-conductive substrate 10 is discharged from the reflow furnace after going through a pre-heating step, a reflow step, and a cooling step which are not illustrated. Also, in the present embodiment, because an active metal such as titanium is not included in the electro-conductive metal paste 30, the high heat-conductive substrate 10 is not required to be baked under a vacuum environment, and can be baked using a device that is used under an atmospheric environment, the device being of lower cost compared to a high vacuum furnace. Further, the heating condition is properly set according to the kind of the high heat-conductive substrate 10, the kind of the electro-conductive metal paste 30, and so on. As the heating condition, when the electro-conductive metal paste 30 is a paste including an Ag—Sn-based alloy for example, setting to approximately 860° C. can be cited. By doing so, solvent, binder and the like included in the electro-conductive metal paste 30 can be vaporized/removed. - Here, because the high heat-
conductive substrate 10 is formed of a non-oxide-based ceramic material such as AlN, the high heat-conductive substrate 10 does not basically adhere to the electro-conductive metal paste 30 (the electro-conductive metal section 30S) of an Ag—Sn-based alloy and the like. However, in the present embodiment, because theholding layer 20 is formed on thewall surface 11 a of the throughhole 11 in the step ofFIG. 3C , predetermined atoms included in theholding layer 20 and predetermined atoms in the electro-conductive metal paste 30 are combined to each other to form a chemical compound. For example, an oxygen atom (O) included in theholding layer 20 and Sn for example in the electro-conductive metal paste 30 are combined to each other to form tin oxide (SnO). Because a tight interface by inter-atom bonding of the chemical compound (SnO) thus formed is formed, the electro-conductive metal section 30S is adhered (bonded) to the high heat-conductive substrate 10, and is held within the throughhole 11. -
FIG. 3F shows the polishing step S6 that is shown inFIG. 2 . In the polishing step S6, one side surface (a front side surface 10 a) and the other side surface (aback side surface 10 b) of the high heat-conductive substrate 10 including the electro-conductive metal section 30S are polished. Also, in the polishing step S6, end surfaces 20 a and 20 b of the holdinglayer 20 and end surfaces 30 a and 30 b of the electro-conductive metal section 30S held inside the throughhole 11 by the holdinglayer 20 are exposed to the front side surface 10 a and theback side surface 10 b of the high heat-conductive substrate 10 respectively (are preferably polished so as to become smooth). In the polishing step S6, mechanical polishing is executed in both front and back surfaces of the high heat-conductive substrate 10. Also, in the polishing step S6, for example, after executing rough grinding of both of the front and back surfaces of the high heat-conductive substrate 10 having been baked before, polishing is executed for finishing the front side surface 10 a and theback side surface 10 b of the high heat-conductive substrate 10 (the holdinglayer 20 and the electro-conductive metal section 30S) having been ground to become smooth. Further, this polishing step S6 is executed to such degree that the holdinglayer 20 having been shielded by the surfaces (the front side surface 10 a and theback side surface 10 b) of the high heat-conductive substrate 10 is removed and the high heat-conductive substrate 10 is exposed. Also, in the polishing step S6, as the grinding agent, powder of the diamond slurry, the alumina slurry, and the like for example is used. - By this polishing step S6, as shown in
FIG. 3F , a smooth surface is is formed which includes the front side surface 10 a of the high heat-conductive substrate 10, theend surface 20 a of one end side of the holdinglayer 20, and theend surface 30 a of one end side of the electro-conductive metal section 30S. In a similar manner, by this polishing step S6, as shown inFIG. 3F , asmooth surface 1 t is formed which includes theback side surface 10 b of the high heat-conductive substrate 10, theend surface 20 b of the other end side of the holdinglayer 20, and theend surface 30 b of the other end side of the electro-conductive metal section 30S. -
FIG. 3G shows the electrode shielding step S7 that is shown inFIG. 2 . In the electrode shielding step S7, thin film metallization is executed. That is to say, in this step, after the polishing step S6, the end surfaces 20 a, 20 b of the holdinglayer 20 and the end surfaces 30 a, 30 b of the electro-conductive metal section 30S having been exposed are shielded by the electrodes (thethin film electrodes 41 and 42). To be more specific, theend surface 30 a of one end side of the electro-conductive metal section 30S exposed to the smooth surface is of the front side of the high heat-conductive substrate 10 is shielded by thethin film electrode 41 along with theend surface 20 a of one end side of the holdinglayer 20 and a part of the front side surface 10 a of the high heat-conductive substrate 10. Also, theend surface 30 b of the other end side of the electro-conductive metal section 30S exposed to thesmooth surface 1 t of the back side is shielded by thethin film electrode 42 along with theend surface 20 b of the other end side of the holdinglayer 20 and a part of theback side surface 10 b of the high heat-conductive substrate 10. Thethin film electrodes thin film electrode 41 of the front side and thethin film electrode 42 of the back side can be made conductive to each other through the electro-conductive metal section 30S that is formed in the throughhole 11. Also, known methods that can execute thin film metallization can be applied to the electrode shielding step S7. - Next, referring to
FIGS. 4A to 4G , an aspect of piercing by the piercing step S2 will be explained for a case of non-penetrated through hole 11 (a non-penetrated hole 12). - In the process drawings of
FIGS. 4A to 4G , the process is executed in the order of 4A→4B→4C→4D→4E→4F→4G. -
FIG. 4A shows the substrate baking step S1 that is shown inFIG. 2 . The substrate baking step S1 can be executed similarly to the explanation that was made referring toFIG. 3A , and a high heat-conductive substrate 10A is thereby manufactured. -
FIG. 4B shows the piercing step S2 that is shown inFIG. 2 . In the piercing step S2, thenon-penetrated hole 12 is formed in the high heat-conductive substrate 10A. Thenon-penetrated hole 12 is formed by laser machining and blast machining. In the laser machining, by controlling the output (W) and the irradiation time, thehole 12 is formed which has a peripheral surface (side surface) 12 a and abottom surface 12 b and not penetrates to theback side surface 10 b (refer toFIG. 4F ) of the high heat-conductive substrate 10A. Also, by applying the laser machining, the diameter of thenon-penetrated hole 12 can be made small, and the diameter of thenon-penetrated hole 12 can be formed to be equal from the opening to the bottom. On the other hand, as the blast machining, shot blast, sand blast, and the like can be applied. Also, as shown inFIG. 4B , when piercing is executed by this aspect, because it is not required to penetrate the hole, thedummy plate 100 that was required inFIG. 3B can be made unnecessary, and the cost incurred in manufacturing can be reduced. -
FIG. 4C shows the holding layer forming step S3 that is shown inFIG. 2 . By executing this holding layer forming step S3, the double-sided circuit substrate 1 related to the intermediate material 10C can be manufactured. The holding layer forming step S3 can be executed similarly to the explanation that was made referring toFIG. 3C . However, in this holding layer forming step S3, the holdinglayer 20 is formed on theperipheral surface 12 a and thebottom surface 12 b of thenon-penetrated hole 12. Also, since thebottom surface 12 b is to be removed by the polishing step S6 described below, it is also possible to be configured that the holdinglayer 20 is formed only on theperipheral surface 12 a excluding thebottom surface 12 b. -
FIG. 4D shows the filling step S4 that is shown inFIG. 2 . The filling step S4 can be executed similarly to the explanation that was made referring toFIG. 3D . However, in an example shown inFIG. 4D , thenon-penetrated hole 12 is formed. Accordingly, because fitting of the mesh-shape member from the opposite side of the hole and the suction device as explained inFIG. 3D are not required, the cost incurred in manufacturing can be reduced. Also, in an example shown inFIG. 4D , since the electro-conductive metal paste 30 does not leak from the opposite side of thenon-penetrated hole 12, it is easier to fill thenon-penetrated hole 12 with the electro-conductive metal paste 30. Further, in an example shown inFIG. 4D , the filling step S4 can be executed quickly by ordinary screen printing that does not use the mesh and the suction device. Also, a range T shown by a single dot chain line inFIG. 4D shows a range used as the product. -
FIG. 4E shows the electro-conductive metal section forming step S5 that is shown inFIG. 2 . The electro-conductive metal section forming step S5 can be executed similarly to the explanation that was made referring toFIG. 3E . -
FIG. 4F shows the polishing step S6 that is shown inFIG. 2 . In the polishing step S6, similarly to the explanation that was made referring toFIG. 3F , the front side surface 10 a and theback side surface 10 b of the high heat-conductive substrate 10A including the electro-conductive metal section 30S are polished. However, here, with respect to theback side surface 10 b where thenon-penetrated hole 12 is not formed, the high heat-conductive substrate 10A is polished until the electro-conductive metal section 30S is exposed. In the polishing step S6, after executing rough grinding of both of the front and back surfaces of the high heat-conductive substrate 10A, polishing is executed for finishing the front side surface 10 a and theback side surface 10 b of the high heat-conductive substrate 10A (including theholding layer 20 and the electro-conductive metal section 30S) having been ground to become smooth. Also, this polishing step S6 is executed until the holdinglayer 20 shielding the surface (the front side surface 10 a and theback side surface 10 b) of the high heat-conductive substrate 10A is removed and the surface of the high heat-conductive substrate 10A is exposed in the front side surface 10 a, and until the electro-conductive metal section 30S is exposed in theback side surface 10 b. - By this polishing step S6, as shown in
FIG. 4F , the smooth surface is is formed which includes the front side surface 10 a of the high heat-conductive substrate 10A, theend surface 20 a of one end side of the holdinglayer 20, and theend surface 30 a of one end side of the electro-conductive metal section 30S. In a similar manner, by this polishing step S6, as shown inFIG. 4F , thesmooth surface 1 t is formed which includes theback side surface 10 b of the high heat-conductive substrate 10A, theend surface 20 b of the other end side of the holdinglayer 20, and theend surface 30 b of the other end side of the electro-conductive metal section 30S. -
FIG. 4G shows the electrode shielding step S7 that is shown inFIG. 2 . The electrode shielding step S7 can be executed similarly to the explanation that was made referring toFIG. 3G . - According to the method for manufacturing the double-
sided circuit substrate 1 shown inFIGS. 4A to 4G , since the dummy sheet 100 (refer toFIG. 3B ) is not required in the step for piercing thenon-penetrated hole 12 shown inFIG. 4B , the cost incurred in manufacturing can be reduced. Also, in the manufacturing method shown inFIGS. 4A to 4G , since the electro-conductive metal paste 30 does not leak from the opposite side of thenon-penetrated hole 12, it is easier to fill thenon-penetrated hole 12 with the electro-conductive metal paste 30. Further, in the manufacturing method shown inFIGS. 4A to 4G , the filling step S4 can be executed quickly by ordinary screen printing that does not use the mesh and the suction device. - By both of the contents shown in
FIGS. 3A to 3G and the contents shown inFIGS. 4A to 4G , the double-sided circuit substrate 1 related to the present embodiment can be manufactured properly. The double-sided circuit substrate 1 includes the high heat-conductive substrate 10 (10A) having the throughhole 11, the holdinglayer 20 formed on thewall surface 11 a of the throughhole 11, and the electro-conductive metal section 30S held inside the throughhole 11 by the holdinglayer 20. - Also, the double-
sided circuit substrate 1 has excellent radiation property because the high heat-conductive substrate 10 (10A) is formed using the high heat-conductive non-oxide-based ceramic material. Further, the double-sided circuit substrate 1 can rigidly hold the electro-conductive metal section 30S within the throughhole 11 by arranging the holdinglayer 20 in the throughhole 11. Since this electro-conductive metal section 30S does not include an active metal, it is not required to be baked under a vacuum environment using a high vacuum furnace and the like in the manufacturing step, and the electro-conductive metal section 30S can be manufactured at a low cost. - Also, according to the present embodiment, there are provided the
smooth surfaces conductive metal section 30S and the end surfaces 20 a, 20 b of both ends of the holdinglayer 20, and the electro-conductive metal section 30S exposed to thesmooth surfaces thin film electrodes 41 and 42 (refer toFIG. 1 ,FIG. 3G , andFIG. 4G ). Thus, by forming thesmooth surfaces sided circuit substrate 1 can be used as a ceramic substrate for double-sided mounting. Particularly, the double-sided circuit substrate 1 can be used properly for a high power laser device. - The present invention is not limited to the embodiments described above, and various modifications are further included. For example, although explanation was made exemplifying the high heat-
conductive substrate sided circuit substrate 1 in a multi-layered style. -
- 1 Double-sided circuit substrate (double-sided circuit non-oxide-based ceramic substrate)
- 1 s, 1 t Smooth surface
- 10, 10A High heat-conductive substrate (high heat-conductive non-oxide-based ceramic substrate)
- 11 Through hole (penetrated hole)
- 12 Non-penetrated hole
- 11 a Wall surface
- 12 a Peripheral surface (wall surface)
- 12 b Bottom surface
- 20 Holding layer
- 30 Electro-conductive metal paste
- 30S Electro-conductive metal section
- 41, 42 Thin film electrode (electrode)
Claims (11)
Priority Applications (1)
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US17/727,026 US12028984B2 (en) | 2018-07-17 | 2022-04-22 | Double-sided circuit non-oxide-based ceramic substrate and method for manufacturing same |
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JP2018134431A JP6446155B1 (en) | 2018-07-17 | 2018-07-17 | Double-sided circuit non-oxide ceramic substrate and manufacturing method thereof |
JP2018-134431 | 2018-07-17 |
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US17/727,026 Division US12028984B2 (en) | 2018-07-17 | 2022-04-22 | Double-sided circuit non-oxide-based ceramic substrate and method for manufacturing same |
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US20200029441A1 true US20200029441A1 (en) | 2020-01-23 |
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US16/502,291 Abandoned US20200029441A1 (en) | 2018-07-17 | 2019-07-03 | Double-Sided Circuit Non-Oxide-Based Ceramic Substrate and Method for Manufacturing Same |
US17/727,026 Active 2040-03-10 US12028984B2 (en) | 2018-07-17 | 2022-04-22 | Double-sided circuit non-oxide-based ceramic substrate and method for manufacturing same |
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US17/727,026 Active 2040-03-10 US12028984B2 (en) | 2018-07-17 | 2022-04-22 | Double-sided circuit non-oxide-based ceramic substrate and method for manufacturing same |
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US (2) | US20200029441A1 (en) |
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CN111681965A (en) * | 2020-06-19 | 2020-09-18 | 西安微电子技术研究所 | Manufacturing method of double-sided photoelectric substrate with high-density through hole interconnection |
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CN113873786B (en) * | 2020-06-30 | 2023-12-29 | 深南电路股份有限公司 | Circuit board processing method and circuit board |
CN112996238B (en) * | 2021-02-05 | 2022-12-06 | 成都中科四点零科技有限公司 | Circuit board assembly structure |
CN113079626A (en) * | 2021-03-18 | 2021-07-06 | 扬州国宇电子有限公司 | Ceramic substrate thin film circuit structure and preparation method thereof |
CN115866936B (en) * | 2023-03-01 | 2023-05-30 | 四川斯艾普电子科技有限公司 | Method for realizing multilayer circuit board by adopting thick film technology |
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JP2020013862A (en) | 2020-01-23 |
US12028984B2 (en) | 2024-07-02 |
TWI688053B (en) | 2020-03-11 |
CN110730574A (en) | 2020-01-24 |
TW202006902A (en) | 2020-02-01 |
US20220248537A1 (en) | 2022-08-04 |
JP6446155B1 (en) | 2018-12-26 |
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