US20190353523A1 - Optical measurement apparatus and optical measurement method - Google Patents
Optical measurement apparatus and optical measurement method Download PDFInfo
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- US20190353523A1 US20190353523A1 US16/414,798 US201916414798A US2019353523A1 US 20190353523 A1 US20190353523 A1 US 20190353523A1 US 201916414798 A US201916414798 A US 201916414798A US 2019353523 A1 US2019353523 A1 US 2019353523A1
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- 238000005259 measurement Methods 0.000 title claims abstract description 71
- 238000000691 measurement method Methods 0.000 title claims description 14
- 239000000523 sample Substances 0.000 claims abstract description 292
- 238000001228 spectrum Methods 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 17
- 230000001678 irradiating effect Effects 0.000 claims description 11
- 230000001427 coherent effect Effects 0.000 claims description 9
- 239000000654 additive Substances 0.000 claims description 3
- 230000000996 additive effect Effects 0.000 claims description 3
- 238000000985 reflectance spectrum Methods 0.000 description 26
- 238000000411 transmission spectrum Methods 0.000 description 17
- 239000013307 optical fiber Substances 0.000 description 9
- 238000002834 transmittance Methods 0.000 description 6
- 238000004364 calculation method Methods 0.000 description 5
- 239000012788 optical film Substances 0.000 description 5
- 239000000835 fiber Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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Images
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/02041—Interferometers characterised by particular imaging or detection techniques
- G01B9/02044—Imaging in the frequency domain, e.g. by using a spectrometer
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0205—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows
- G01J3/0254—Spectrometers, other than colorimeters, making use of an integrating sphere
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0608—Height gauges
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0675—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating using interferometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/14—Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
- G01B11/306—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces for measuring evenness
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/0209—Low-coherence interferometers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/46—Measurement of colour; Colour measuring devices, e.g. colorimeters
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0938—Using specific optical elements
- G02B27/0977—Reflective elements
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
- G01B2210/40—Caliper-like sensors
- G01B2210/42—Caliper-like sensors with one or more detectors on a single side of the object to be measured and with a backing surface of support or reference on the other side
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
- G01B2210/40—Caliper-like sensors
- G01B2210/48—Caliper-like sensors for measurement of a wafer
Abstract
an optical measurement apparatus includes: a probe including a transmissive optical member having a reference surface, the probe being configured to irradiate a sample with light through the reference surface, and receive a first reflected light from the reference surface, a second reflected light from a front side of the sample, and a third reflected light from a back side of the sample; and a calculator configured to calculate a first distance from the reference surface to the front side of the sample with use of a first reflection interference light to be generated by the first reflected light and the second reflected light, and to calculate a thickness of the sample with use of a second reflection interference light to be generated by the second reflected light and the third reflected light.
Description
- The present application claims priority from Japanese application JP 2018-096422 filed on May 18, 2018, the content of which is hereby incorporated by reference into this application.
- The present invention relates to an optical measurement apparatus and an optical measurement method.
- In the related art, for example, in Japanese Patent Application Laid-open. No. 2009-92454, there is disclosed an optical measurement apparatus configured to calculate a film thickness of a sample by irradiating one surface of the sample with light from a probe and analyzing reflected light of the light from the probe.
- However, the optical measurement apparatus in the related art has a problem in that a distance between the probe and the sample cannot be measured.
- The present disclosure has been made in view of the above-mentioned situation, and therefore has an object to measure, by an optical measurement apparatus, in which one surface of a sample is irradiated with light, a distance between a probe and the sample, and a film thickness of the sample.
- In order to solve the above-mentioned problem, an optical measurement apparatus according to one embodiment of the present disclosure includes: a probe including a transmissive optical member having a reference surface, the probe being configured to irradiate a sample with light through the reference surface, and to receive a first reflected light from the reference surface, a second reflected light from a front side of the sample, and a third reflected light from a back side of the sample; and a calculator, which is configured to calculate a first distance from the reference surface to the front side of the sample with use of a first reflection interference light to be generated by the first reflected light and the second reflected light, and to calculate a thickness of the sample with use of a second reflection interference light to be generated by the second reflected light and the third reflected light.
- Further, an optical measurement method according to one embodiment of the present disclosure is an optical measurement method, which is performed with use of a probe including a transmissive optical member having a reference surface, and includes: irradiating a sample with light through the reference surface with use of the probe; receiving, by the probe, a first reflected light from the reference surface, a second reflected light from a front side of the sample, and a third reflected light from a back side of the sample; calculating a first distance from the reference surface to the front side of the sample with use of a first reflection interference light to be generated by the first reflected light and the second reflected light; and calculating a thickness of the sample with use of a second reflection interference light to be generated by the second reflected light and the third reflected light.
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FIG. 1 is a schematic diagram for illustrating a schematic configuration of an optical measurement apparatus according to a first embodiment of the present disclosure. -
FIG. 2A is a schematic view for illustrating an arrangement relationship of a stage and a probe in the optical measurement apparatus according to the first embodiment. -
FIG. 2B is a schematic view for illustrating an arrangement relationship of the stage and the probe in the optical measurement apparatus according to the first embodiment. -
FIG. 3 is a schematic graph for showing a reflectance spectrum acquired by the optical measurement apparatus according to the first embodiment. -
FIG. 4 is a schematic graph for showing a power spectrum acquired by the optical measurement apparatus according to the first embodiment. -
FIG. 5 is a schematic view for illustrating an arrangement relationship among the stage, the probe, and a sample in the optical measurement apparatus according to the first embodiment. -
FIG. 6 is a flow chart for illustrating a method of calculating a third distance in an optical measurement method according to the first embodiment. -
FIG. 7 is a schematic graph for showing a reflectance spectrum acquired by the optical measurement apparatus according to the first embodiment. -
FIG. 8 is a schematic graph for showing a power spectrum acquired by the optical measurement apparatus according to the first embodiment. -
FIG. 9 is a graph for showing a result of measurement by the optical measurement method according to the first embodiment. -
FIG. 10 is a schematic view for illustrating the internal structure of a spectrometer of the optical measurement apparatus according to the first embodiment. -
FIG. 11 is a schematic graph for showing a relationship between a period of an interference waveform and an element pitch of a linear image sensor, which is obtained when a sample having an optical thickness that is an upper limit value of a coherent optical thickness is measured. - Referring to the accompanying drawings, a description is now given of a first embodiment of the present disclosure.
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FIG. 1 is a schematic diagram for illustrating a schematic configuration of anoptical measurement apparatus 101 according to the first embodiment. As illustrated inFIG. 1 , theoptical measurement apparatus 101 according to the first embodiment includes aprobe 10 including a transmissiveoptical member 1 having areference surface 1A. Theprobe 10 is configured to irradiate asample 151 with light through thereference surface 1A. Theprobe 10 is also configured to receive a first reflected light from thereference surface 1A, a second reflected light from a front side of thesample 151, and a third reflected light from a back side of thesample 151. - A first reflection interference light is generated by the first reflected light and the second reflected light, which have been received by the
probe 10. Moreover, a second reflection interference light is generated by the second reflected light and the third reflected light, which have been received by theprobe 10. The first reflection interference light and the second reflection interference light are transmitted to acalculator 6. - The
calculator 6 is configured to calculate a first distance d1 from thereference surface 1A to thesample 151 with the use of the first reflection interference light. Thecalculator 6 is also configured to calculate a thickness tx of thesample 151 with the use of the second reflection interference light. - With the above-mentioned configuration, the optical measurement apparatus, which is configured to irradiate one surface of the
sample 151 with the light, can measure the first distance d1 between thereference surface 1A of theprobe 10 and thesample 151, and the thickness tx of thesample 151. - Moreover, because the irradiation of only the front side of the
sample 151 with the light is sufficient, it is not required to arrange another probe on the back side of thesample 151. Therefore, it is not required to adjust a position of an optical axis of theprobe 10 and a position of an optical axis of the probe on the back side. Further, because it is not required to arrange the probe on the back side, it is also not required to arrange thesample 151 to float in the space, and the space in which the probe is arranged on the back side of thesample 151 is also not required. - Now, a specific configuration of the
optical measurement apparatus 101 according to the first embodiment including a freely selectable configuration is described. - As illustrated in
FIG. 1 , theoptical measurement apparatus 101 according to the first embodiment includes, in addition to the configuration described above, alight source 2, anoptical system 3, a spectrometer 4, astage 7, and other components. - The
optical system 3 includesoptical fibers fiber junction 35. Light output by thelight source 2 is transmitted to thefiber junction 35 through theoptical fiber 34, and to theprobe 10 through theoptical fiber 31. - Incident light that has been transmitted through an end surface of the
optical fiber 31 is converted into a parallel ray by acollimator lens 11 in theprobe 10, and is condensed by acondenser lens 12. Theprobe 10 is configured to irradiate thesample 151 with the light that has been condensed by thecondenser lens 12 through thereference surface 1A. In the first embodiment, the light with which theprobe 10 irradiates thesample 151 has a wavelength that is transmitted through thesample 151. Therefore, the light with which theprobe 10 irradiates thesample 151 reaches not only the front side of thesample 151 but also the back side of thesample 151. In the first embodiment, there is adopted a configuration in which thelight source 2 is an amplified spontaneous emission (ASE) light source configured to generate incoherent light in a near-infrared range, and in which the light with which theprobe 10 irradiates thesample 151 is the incoherent light in the near-infrared range. - The light with which the
probe 10 irradiates thesample 151 is reflected by thereference surface 1A in theprobe 10. The light reflected by thereference surface 1A is defined as the “first reflected light”. The light with which theprobe 10 irradiates thesample 151 is also reflected by the front side and the back side of thesample 151. The light reflected by the front side of thesample 151 is defined as the “second reflected light”, and the light reflected by the back side of thesample 151 is defined as the “third reflected light”. - The
probe 10 is configured to receive the first reflected light from thereference surface 1A, the second reflected light from the front side of thesample 151, and the third reflected light from the back side of thesample 151. - In the first embodiment, the
probe 10 has thecondenser lens 12, and is adjusted so that focus is placed near the front side of thesample 151. Therefore, a measurement spot diameter can be reduced to enable measurement reflecting a distribution of fine front shapes of thesample 151. Moreover, the light with which to irradiate thesample 151 is condensed, and hence a reduction in amount of received light with respect to an amount of projected light can be suppressed. Because the reduction in amount of received light can be suppressed, measurement with short exposure time can be performed. Further, even when an optical axis of theprobe 10 is not perpendicular to the front side of thesample 151, or even when flatness of the front side of thesample 151 is low, the reduction in amount of received light can be suppressed. - It is desired that a thickness tt of the transmissive
optical member 1 be larger than the first distance d1. With the thickness tt of the transmissiveoptical member 1 being larger than the first distance d1, a degree of focus of the light with which theprobe 10 irradiates thesample 151 can be reduced on asurface 1B opposite to thereference surface 1A of the transmissiveoptical member 1. As a result, an intensity of reflected light from theopposite surface 1B can be reduced, and interference of reflected light from theopposite surface 1B with the first reflected light, the second reflected light, and the third reflected light can be reduced. - It is also desired that an optical thickness obtained by multiplying the thickness tt of the transmissive
optical member 1 by a refractive index of the transmissiveoptical member 1 be larger than an upper limit of a coherent optical thickness range of the spectrometer 4, which is to be described later. The upper limit of the coherent optical thickness range of the spectrometer 4 can be expressed by the following equation. -
- In
Expression 1, dmax represents the upper limit value of the coherent optical thickness range, λmax represents an upper limit value of a measurement wavelength range of the spectrometer 4, kmin represents a wave number corresponding to λmax, and has the relationship: kmin=1/λmax, k1 represents a wave number that is in phase with kmin in an interference waveform, and that is adjacent to kmin, λ1 represents a wavelength corresponding to k1, and has the relationship: k1=1/λ1, and Δλ represents wavelength resolution, and can be expressed by the following equation. -
- In
Expression 2, Sp represents the number of elements of a linear image sensor in adetector 44, which is to be described later, λmax represents the upper limit value of the measurement wavelength range of the spectrometer 4, and λmin represents a lower limit value of the measurement wavelength range of the spectrometer 4.FIG. 11 is a schematic graph for showing a relationship between a period of the interference waveform and an element pitch (interval between sampling points) of the linear image sensor obtained when a sample having an optical thickness that is the upper limit value dmax of a coherent optical thickness is measured with the use of the spectrometer 4. Referring toFIG. 11 ,Expression 1 is calculated such that one period of the interference waveform in a reflectance spectrum becomes data corresponding to two adjacent elements of the linear image sensor in thedetector 44. Therefore, dmax can be interpreted as the largest possible optical thickness that satisfies the Nyquist sampling theorem in frequency analysis. - It is desired that the
opposite surface 1B be applied with anti-reflection coating, or that theopposite surface 1B be arranged so as to obliquely intersect the optical axis of theprobe 10. Through adoption of such a configuration, interference of the reflected light from theopposite surface 1B with the first reflected light, the second reflected light, and the third reflected light can be reduced. - It is desired that the end surface of the
optical fiber 31 to be attached to theprobe 10 be angled physical contact (APC) polished into an angled spherical surface. By being APC polished into the angled spherical surface, the end surface of theoptical fiber 31 can reduce interference of the light reflected by the end surface of theoptical fiber 31 with the first reflected light, the second reflected light, and the third reflected light. - The first reflection interference light is generated by the first reflected light and the second reflected light, which have been received by the
probe 10. Moreover, the second reflection interference light is generated by the second reflected light and the third reflected light. Measurement reflected light including the first reflection interference light and the second reflection interference light is transmitted to the spectrometer 4 through theoptical fiber 31, thefiber junction 35, and theoptical fiber 33. - The spectrometer 4 is configured to measure a reflectance spectrum of the measurement reflected light, and output a result of the measurement to the
calculator 6. The spectrometer 4 includes ashutter 41, a cut-off filter 42, adiffraction grating 43, and thedetector 44. - The
shutter 41 is provided to shut the light entering thedetector 44 when thedetector 44 is reset, for example. Theshutter 41 is a mechanical shutter to be driven by electromagnetic force, for example. - The cut-
off filter 42 is an optical filter configured to cut off wavelength components outside a measurement range included in the measurement reflected light that enters the spectrometer 4. As illustrated inFIG. 10 , the cut-off filter 42 cuts off stray light generated near a lower limit of the measurement wavelength range of the spectrometer 4 of the measurement reflected light that has entered through a slit. In the first embodiment, the cut-off filter 42 cuts off wavelengths of about 1,000 nm or less, for example. As a result, only first-order light of thediffraction grating 43 can be transmitted and higher-order light can be cut off, with the result that occurrence of a measurement failure due to superimposition of higher-order diffracted light can be reduced in the spectrometer 4. The measurement reflected light that has been transmitted through the cut-off filter 42 is reflected by a collimating mirror, for example, and enters thediffraction grating 43. - The
diffraction grating 43 splits the measurement reflected light including the first reflection interference light and the second reflection interference light, and guides each split light wave to thedetector 44. Specifically, thediffraction grating 43 is a reflection-type refractive grating, and is configured to reflect a diffracted wave of each predetermined wavelength interval in a corresponding direction. When the measurement reflected light enters thediffraction grating 43 having the above-mentioned configuration, each wavelength component included therein is reflected in the corresponding direction to enter a predetermined detection region of thedetector 44. Thediffraction grating 43 is formed of a blazed holographic plane grating, for example. As illustrated inFIG. 10 , there may be adopted a configuration in which a focusing mirror is interposed between thediffraction grating 43 and thedetector 44, and in which the measurement reflected light reflected by thediffraction grating 43 is further reflected by the focusing mirror to enter thedetector 44. - As the
detector 44, for example, there is used a linear image sensor in which a plurality of elements having sensitivity in a near-infrared band are linearly arranged. Thedetector 44 is configured to output, to thecalculator 6, an electrical signal corresponding to a light intensity of each wavelength component included in the measurement reflected light split by thediffraction grating 43. - When the
calculator 6 receives the electrical signal from thedetector 44, thecalculator 6 transforms an intensity of each wavelength indicated by the electrical signal to a reflectance of each wavelength to generate the reflectance spectrum or transmittance spectrum. - Moreover, the
calculator 6 holds, as dark spectrum data, an intensity of each wavelength indicated by the electrical signal received from thedetector 44 under a state in which no light enters the spectrometer 4, for example. - Further, the
calculator 6 holds, as reference spectrum data, an intensity of each wavelength obtained by subtracting the intensity of each wavelength included in the dark spectrum data from an intensity of each wavelength indicated by an electrical signal received from thedetector 44 under a state in which a reference object, for example, an aluminum plate, is placed on thestage 7, for example. - The
calculator 6 subtracts the intensity of each wavelength included in the dark spectrum data from an intensity of each wavelength indicated by an electrical signal received from thedetector 44 under a state in which thesample 151 is placed on thestage 7, and then divides the result by the intensity of each wavelength included in the reference spectrum data, to thereby generate reflectance spectrum data or transmittance spectrum data of each wavelength. - In the first embodiment, a description is given of an example in which the
calculator 6 acquires such a reflectance spectrum as shown inFIG. 3 . In the reflectance spectrum shown inFIG. 3 , the horizontal axis indicates the wavelength, and the vertical axis indicates the reflectance. As described above, the measurement reflected light includes the first reflection interference light to be generated by the first reflected light and the second reflected light, and the second reflection interference light to be generated by the second reflected light and the third reflected light. Therefore, the reflectance spectrum or transmittance spectrum contains information on the first reflection interference light and the second reflection interference light. - The
calculator 6 calculates the first distance d1, and the thickness tx of thesample 151 with the use of the generated reflectance spectrum (or transmittance spectrum). In the first embodiment, the horizontal axis of the reflectance spectrum (or transmittance spectrum) acquired from the spectrometer 4 is transformed to a wave number, and the vertical axis is transformed to a wave number-transformed reflectance (or wave number-transformed transmittance) to obtain a wave number-converted reflectance spectrum (or wave number-transformed transmittance spectrum). Thereafter, the wave number-converted reflectance spectrum (or wave number-transformed transmittance spectrum) is Fourier-transformed for the wave number to obtain such a power spectrum of each frequency component as shown inFIG. 4 . When the thickness tx of thesample 151 is calculated, film-thickness calculation taking into consideration the dependence of the refractive index of thesample 151 on the wavelength may be performed. In other words, when the horizontal axis of the reflectance spectrum is transformed from the wavelength to the wave number, the wave number is calculated based on a refractive index value and a wavelength value of each wavelength of the sample, and the vertical axis is transformed from a reflectance R to a wave number-transformed reflectance R′=R/(1-R), or from a transmittance T to a wave number-transformed transmittance T′=1/T. When the wave number-converted reflectance spectrum (or wave number-transformed transmittance spectrum) obtained by the transform is Fourier-transformed for the wave number, the thickness tx taking into consideration the dependence of the refractive index of thesample 151 on the wavelength can be calculated with higher accuracy. As a highly-accurate film-thickness calculation method taking into consideration the dependence of the refractive value on the wavelength, the method described in Japanese Patent Application Laid-open No. 2009-92454 can be used, for example. - As described above, the reflectance spectrum or transmittance spectrum measured by the
detector 44 contains the above-mentioned information on the first reflection interference light and the second reflection interference light. Therefore, in the power spectrum shown inFIG. 4 , a first peak p1 based on the first reflection interference light, and a second peak p2 based on the second reflection interference light appear. The first peak p1 indicates information on the first distance d1 between thereference surface 1A of theprobe 10 and thesample 151, and the second peak p2 indicates information on the thickness tx of thesample 151. In the power spectrum shown inFIG. 4 , the horizontal axis indicates an optical film thickness. Therefore, for the first distance d1 indicating a distance in the air, a value itself of the optical film thickness at the first peak p1 shown inFIG. 4 indicates the first distance d1. Meanwhile, for the thickness tx of thesample 151, a value obtained by dividing a value of the optical film thickness at the second peak p2 shown inFIG. 4 by a refractive index of thesample 151 indicates the thickness tx. - With the above-mentioned configuration, in the
optical measurement apparatus 101, in which the one surface of thesample 151 is irradiated with the light, the first distance d1 between thereference surface 1A of theprobe 10 and thesample 151, and the thickness tx of thesample 151 can be measured. - There may be adopted a configuration in which at least one of the
stage 7, on which thesample 151 illustrated inFIG. 2A is placed, or theprobe 10 is moved in a first direction (for example, X-axis direction of the stage 7), which intersects the optical axis of theprobe 10, and theprobe 10 irradiates the sample with the light to receive the second reflected light and the third reflected light at a plurality of positions in the first direction. There may be adopted a configuration in which thecalculator 6 then calculates the first distance d1 and the thickness tx of thesample 151, which have been described above, at the plurality of positions in the first direction. - With the above-mentioned configurations, information on front and back shapes of the
sample 151 on a desired segment can be acquired. In other words, through the acquisition of the first distance d1 between thereference surface 1A of theprobe 10 and the front side of thesample 151 at the plurality of positions in the first direction, the information on the front shapes of thesample 151 on the desired segment can be acquired. Further, through acquisition of the thickness tx of thesample 151 on the same segment, information on the back shape of thesample 151 can be acquired based on the first distance d1 and the thickness tx. As a result, a position of a flaw or dent formed on the front and back sides of thesample 151 on the desired segment can be acquired. - Further, there may be adopted a configuration in which the at least one of the
stage 7 or theprobe 10 illustrated inFIG. 2A may be moved not only in the first direction, but also in a second direction (for example, Y-axis direction of the stage 7), which intersects the optical axis direction of theprobe 10 and intersects the first direction, and in which theprobe 10 irradiates thesample 151 with the light to receive the second reflected light and the third reflected light at a plurality of positions in the first direction and the second direction. There may be adopted a configuration in which thecalculator 6 then calculates the first distance d1 and the thickness tx of thesample 151 at the plurality of positions in the second direction. - With the above-mentioned configuration, information on front and back shapes of the
sample 151 on a desired plane can be acquired. In other words, through the acquisition of the first distance d1 between thereference surface 1A of theprobe 10 and the front side of thesample 151 at the plurality of positions in the first direction and the second direction, the information on the front shapes of thesample 151 on the desired plane can be acquired. Further, through acquisition of the thickness tx of thesample 151 on the same plane, information on the back shape of thesample 151 can be acquired based on the first distance d1 and the thickness tx. As a result, a position of a flaw or dent formed on the front and back sides of thesample 151 on the desired plane can be acquired. - As an example in which the information on front and back shapes of the
sample 151 on the desired plane is acquired, the example in which at least one of thestage 7 or theprobe 10 is moved in the X-axis direction and the Y-axis direction of thestage 7 has been given as an example, but the present disclosure is not limited thereto. For example, there may be adopted a configuration in which, as illustrated inFIG. 2B , theprobe 10 below which thesample 151 is placed is moved in a radial direction R (first direction) from the center of thestage 7, and at the same time, thestage 7 is moved in a circumferential direction e (second direction). - When the
sample 151 is warped as illustrated inFIG. 5 , a space may be generated between thesample 151 and thestage 7. Now, a method of calculating a third distance d3 between thesample 151 and thestage 7 is described.FIG. 6 is a flow chart for illustrating the method of calculating the third distance in an optical measurement method according to the first embodiment. - First, in a first step S001, under a state in which the
sample 151 is not placed on thestage 7, theprobe 10 irradiates thestage 7 with light through thereference surface 1A. Theprobe 10 receives a fourth reflected light from a surface of thestage 7. Moreover, theprobe 10 receives the first reflected light from thereference surface 1A. - Then, in a second step S002, the
calculator 6 calculates a second distance d2 from thereference surface 1A to thestage 7 with the use of a third reflection interference light to be generated by the first reflected light and the fourth reflected light. Now, a method of calculating the second distance d2 is described. - The
detector 44 is configured to output to thecalculator 6 an electrical signal corresponding to a light intensity of each wavelength component included in the measurement reflected light including the third reflection interference light split by thediffraction grating 43. - When the
calculator 6 receives the electrical signal from thedetector 44, thecalculator 6 transforms an intensity of each wavelength indicated by the electrical signal to a reflectance of each wavelength to generate the reflectance spectrum or transmittance spectrum. - In the first embodiment, a description is given of an example in which the
calculator 6 acquires such a reflectance spectrum as shown inFIG. 7 . As described above, the measurement reflected light includes the third reflection interference light to be generated by the first reflected light and the fourth reflected light. Therefore, the reflectance spectrum or transmittance spectrum contains information on the third reflection interference light. - The
calculator 6 calculates the second distance d2 from thereference surface 1A to thestage 7 with the use of the generated reflectance spectrum (or transmittance spectrum). In the first embodiment, the horizontal axis of the reflectance spectrum (or transmittance spectrum) acquired from the spectrometer 4 is transformed to a wave number, and the vertical axis is transformed to a wave number-transformed reflectance (or wave number-transformed transmittance) to obtain a wave number-converted reflectance spectrum (or wave number-transformed transmittance spectrum). Thereafter, the wave number-converted reflectance spectrum (or wave number-transformed transmittance spectrum) is Fourier-transformed for the wave number to obtain such a power spectrum of each frequency component as shown inFIG. 8 . When the thickness tx of thesample 151 is calculated, film-thickness calculation taking into consideration the dependence of the refractive index of thesample 151 on the wavelength may be performed. In other words, when the horizontal axis of the reflectance spectrum is transformed from the wavelength to the wave number, the wave number is calculated based on a refractive index value and a wavelength value of each wavelength of thesample 151, and the vertical axis is transformed from a reflectance R to a wave number-transformed reflectance R′=R/(1-R), or from a transmittance T to a wave number-transformed transmittance T′=1/T. When the wave number-converted reflectance spectrum (or wave number-transformed transmittance spectrum) obtained by the transform is Fourier-transformed for the wave number, the thickness tx taking into consideration the dependence of the refractive index of thesample 151 on the wavelength can be calculated with higher accuracy. As a specific highly-accurate film-thickness calculation method taking into consideration the dependence of the refractive value on the wavelength, the method described in Japanese Patent Application Laid-open No. 2009-92454 can be used, for example. - As described above, the reflectance spectrum or transmittance spectrum generated by the
calculator 6 contains the information on the third reflection interference light. Therefore, in the power spectrum shown inFIG. 8 , a third peak p3 based on the third reflection interference light appears. The third peak p3 indicates information on the second distance d2 between thereference surface 1A of theprobe 10 and thestage 7. In the power spectrum shown inFIG. 8 , the horizontal axis indicates an optical film thickness. Therefore, for the second distance d2 indicating a distance in the air, a value itself of the optical film thickness at the third peak p3 shown inFIG. 8 indicates the second distance d2. - Then, in a third step S003, under a state in which the
sample 151 is placed on thestage 7, theprobe 10 irradiates thesample 151 with light through thereference surface 1A. Theprobe 10 receives the second reflected light from the front side of thesample 151, and receives the third reflected light from the back side of thesample 151. Moreover, theprobe 10 receives the first reflected light from thereference surface 1A. - Then, in a fourth step S004, the
calculator 6 calculates the first distance d1 from thereference surface 1A to the front side of thesample 151 with the use of the first reflection interference light to be generated by the first reflected light and the second reflected light, and calculates the thickness tx of thesample 151 with the use of the second reflection interference light to be generated by the second reflected light and the third reflected light. - The third step S003 and the fourth step S004 may be performed prior to the first step S001 and the second step S002.
- Alternatively, after the first step S001 and the third step S003 are first performed, the second step S002 and the fourth step S004 may be performed at once.
- Finally, in a fifth step S005, the
calculator 6 calculates the third distance d3 between thesample 151 and thestage 7 with the second distance d2 illustrated inFIG. 5 being an additive element, and with the first distance d1 and the thickness tx of thesample 151 being subtractive elements. - With the optical measurement method as described above, in the optical measurement apparatus, in which the one surface of the
sample 151 is irradiated with light, the third distance d3 between thesample 151 and thestage 7 can be measured. - In the first step S001, there may be adopted the method in which at least one of the
stage 7 or theprobe 10 illustrated inFIG. 2A andFIG. 2B is moved in the first direction (for example, the X-axis direction of the stage, or the radial direction), and theprobe 10 irradiates thestage 7 with light to receive the fourth reflected light at the plurality of positions in the first direction. - Then, in the third step S003, there may be adopted the method in which at least one of the
stage 7 or theprobe 10 illustrated inFIG. 2A andFIG. 2B is moved in the first direction, and theprobe 10 irradiates thesample 151 with light to receive the second reflected light and the third reflected light at the plurality of positions corresponding to the positions at which the fourth reflected light is received. - Through adoption of the above-mentioned method, in the fifth step S005, the
calculator 6 calculates the thickness tx of thesample 151, the first distance d1, the second distance d2, and the third distance d3 at the plurality of positions in the first direction. As a result, information on the warp of thesample 151 on the desired segment can be acquired. - In the third step S003, there may be adopted a configuration in which, in order for the
probe 10 to receive the second reflected light and the third reflected light at the plurality of positions corresponding to the positions at which the fourth reflected light is received, thecalculator 6 stores the positions at which the fourth reflected light is received in the first step S001. - Further, the third step S003 may be performed prior to the first step S001. In that case, there may be adopted a configuration in which the
calculator 6 stores the positions at which the second reflected light and the third reflected light are received in the third step S003. - Through adoption of the above-mentioned configuration, the light receiving positions in the first step S001 and the light receiving positions in the third step S003 can be associated with each other. In other words, in the third step S003, the second reflected light and the third reflected light can be received at the plurality of positions corresponding to the positions at which the fourth reflected light is received.
-
FIG. 9 is a graph for showing a result of the measurement by the optical measurement method according to the first embodiment. - In
FIG. 9 , the solid line indicates the second distance d2, the broken line indicates the first distance d1, and the long broken line indicates the thickness tx of thesample 151. The second distance d2, the first distance d1, and the thickness tx are calculated by thecalculator 6 at the plurality of positions in the first direction based on the above-mentioned peak values of the power spectrum. - Further, in
FIG. 9 , the one-dot chain line indicates information on the front shapes of thesample 151 with respect to thestage 7. Moreover, the two-dot chain line indicates information on the back shapes of thesample 151 with respect to thestage 7, and indicates information on the warp of thesample 151 on the desired segment. The information on the front shapes of thesample 151, which is indicated by the one-dot chain line, can be determined by subtracting the first distance d1 from the second distance d2. Moreover, the information on the back shapes of thesample 151, which is indicated by the two-dot chain line, is the third distance d3 between thesample 151 and thestage 7, and can be determined by subtracting the first distance d1 and the thickness tx from the second distance d2. - As described above, through the calculation of the third distance d3 at the plurality of positions in the first direction, information on the warp of the
sample 151 on the desired segment can be acquired. - Further, there may be adopted a method in which, in the first step S001, at least one of the
stage 7 or theprobe 10 illustrated inFIG. 2A andFIG. 2B is moved not only in the first direction (for example, the X-axis direction or the radial direction of the stage), but also in the second direction (for example, the Y-axis direction or circumferential direction of the stage), which intersects the optical axis direction of theprobe 10 and intersects the first direction, and in which theprobe 10 irradiates thestage 7 with light to receive the fourth reflected light at the plurality of positions in the first direction and the second direction. - Then, in the third step S003, there may be adopted the method in which at least one of the
stage 7 or theprobe 10 illustrated inFIG. 2A andFIG. 2B is moved in the first direction and the second direction, and theprobe 10 irradiates thesample 151 with light to receive the second reflected light and the third reflected light at the plurality of positions corresponding to the positions at which the fourth reflected light is received. - Through adoption of the above-mentioned method, in the fifth step S005, the
calculator 6 calculates the thickness tx of thesample 151, the first distance d1, the second distance d2, and the third distance d3 at the plurality of positions in the first direction and the second direction. As a result, information on the warp of thesample 151 on the desired plane can be acquired. - In the third step S003, there may be adopted a configuration in which, in order for the
probe 10 to receive the second reflected light and the third reflected light at the plurality of positions corresponding to the positions at which the fourth reflected light is received, thecalculator 6 stores the positions at which the fourth reflected light is received in the first step S001. - Further, the third step S003 may be performed prior to the first step S001. In that case, there may be adopted a configuration in which the
calculator 6 stores the positions at which the second reflected light and the third reflected light are received in the third step S003. - Through adoption of the above-mentioned configuration, the light receiving positions in the first step S001 and the light receiving positions in the third step S003 can be associated with each other. In other words, in the third step S003, the second reflected light and the third reflected light can be received at the plurality of positions corresponding to the positions at which the fourth reflected light is received.
- While there have been described what are at present considered to be certain embodiments of the invention, it will be understood that various modifications may be made thereto, and it is intended that the appended claims cover all such modifications as fall within the true spirit and scope of the invention.
Claims (16)
1. An optical measurement apparatus, comprising:
a probe including a transmissive optical member having a reference surface, the probe being configured to irradiate a sample with light through the reference surface, and to receive a first reflected light from the reference surface, a second reflected light from a front side of the sample, and a third reflected light from a back side of the sample;
a spectrometer configured to measure a spectrum of measurement reflected light including a first reflection interference light to be generated by the first reflected light and the second reflected light, and a second reflection interference light to be generated by the second reflected light and the third reflected light; and
a calculator, which is configured to calculate a first distance from the reference surface to the front side of the sample with use of the first reflection interference light, and to calculate a thickness of the sample with use of the second reflection interference light,
the transmissive optical member having an optical thickness that is larger than an upper limit value of a coherent optical thickness, which is defined by an upper limit value of a measurement wavelength range of the spectrometer and by a wavelength resolution of the spectrometer.
2. The optical measurement apparatus according to claim 1 , wherein the light has a wavelength that is transmitted through the sample.
3. The optical measurement apparatus according to claim 1 , wherein the optical measurement apparatus is configured to:
move at least one of a stage having the sample placed thereon or the probe in a first direction;
irradiate, by the probe, the sample with the light to receive the first reflected light, the second reflected light, and the third reflected light at a plurality of positions in the first direction; and
calculate, by the calculator, the first distance and the thickness of the sample at the plurality of positions in the first direction.
4. The optical measurement apparatus according to claim 3 , wherein the optical measurement apparatus is configured to:
move at least one of the stage or the probe in a second direction, which intersects the first direction;
irradiate, by the probe, the sample with the light to receive the first reflected light, the second reflected light, and the third reflected light at a plurality of positions in the second direction; and
calculate, by the calculator, the first distance and the thickness of the sample at the plurality of positions in the second direction.
5. An optical measurement apparatus, comprising:
a probe including a transmissive optical member having a reference surface, the probe being configured to irradiate a sample with light through the reference surface, and to receive a first reflected light from the reference surface, a second reflected light from a front side of the sample, and a third reflected light from a back side of the sample; and
a calculator, which is configured to calculate a first distance from the reference surface to the front side of the sample with use of a first reflection interference light to be generated by the first reflected light and the second reflected light, and to calculate a thickness of the sample with use of a second reflection interference light to be generated by the second reflected light and the third reflected light,
the optical measurement apparatus being configured to:
irradiate, under a state in which the sample is not placed on a stage, by the probe, the stage with the light through the reference surface to receive the first reflected light, and a fourth reflected light from a surface of the stage;
calculate, by the calculator, a second distance from the reference surface to the stage with use of a third reflection interference light to be generated by the first reflected light and the fourth reflected light; and
calculate, by the calculator, a third distance between the back side of the sample and the stage with the second distance being an additive element, and with the first distance and the thickness of the sample being subtractive elements.
6. The optical measurement apparatus according to claim 5 ,
wherein the optical measurement apparatus is configured to, under the state in which the sample is not placed on the stage:
move at least one of the stage or the probe in a first direction; and
irradiate, by the probe, the stage with the light to receive the first reflected light and the fourth reflected light at a plurality of positions in the first direction,
wherein the optical measurement apparatus is configured to, under a state in which the sample is placed on the stage,
move at least one of the stage or the probe in the first direction; and
irradiate, by the probe, the sample with the light to receive the first reflected light, the second reflected light, and the third reflected light at a plurality of positions corresponding to the plurality of positions at which the fourth reflected light is received, and
calculate, by the calculator, the thickness of the sample, the first distance, the second distance, and the third distance at the plurality of positions in the first direction.
7. The optical measurement apparatus according to claim 6 ,
wherein the optical measurement apparatus is configured to, under the state in which the sample is not placed on the stage:
move at least one of the stage or the probe in a second direction, which intersects the first direction; and
irradiate, by the probe, the stage with the light to receive the first reflected light and the fourth reflected light at a plurality of positions in the second direction,
wherein the optical measurement apparatus is configured to, under the state in which the sample is placed on the stage,
move at least one of the stage or the probe in the second direction; and
irradiate, by the probe, the sample with the light to receive the first reflected light, the second reflected light, and the third reflected light at a plurality of positions corresponding to the plurality of positions at which the fourth reflected light is received, and
calculate, by the calculator, the thickness of the sample, the first distance, the second distance, and the third distance at the plurality of positions in the second direction.
8. The optical measurement apparatus according to claim 5 , further comprising a spectrometer, which is configured to measure a spectrum of measurement reflected light including the first reflection interference light and the second reflection interference light, and to output a result of the measurement to the calculator,
wherein the transmissive optical member has an optical thickness that is larger than an upper limit value of a coherent optical thickness, which is defined by an upper limit value of a measurement wavelength range of the spectrometer and by a wavelength resolution of the spectrometer.
9. An optical measurement method, which is performed with use of a probe including a transmissive optical member having a reference surface, and a spectrometer, the optical measurement method comprising:
irradiating a sample with light through the reference surface with use of the probe;
receiving, by the probe, a first reflected light from the reference surface, a second reflected light from a front side of the sample, and a third reflected light from a back side of the sample;
measuring, with use of the spectrometer, a spectrum of measurement reflected light including a first reflection interference light to be generated by the first reflected light and the second reflected light, and a second reflection interference light to be generated by the second reflected light and the third reflected light; and
calculating a first distance from the reference surface to the front side of the sample with use of the first reflection interference light, and calculating a thickness of the sample with use of the second reflection interference light,
the transmissive optical member having an optical thickness that is larger than an upper limit value of a coherent optical thickness, which is defined by an upper limit value of a measurement wavelength range of the spectrometer and by a wavelength resolution of the spectrometer.
10. The optical measuring method according to claim 9 , wherein the light has a wavelength that is transmitted through the sample.
11. The optical measuring method according to claim 9 , further comprising:
moving at least one of a stage, on which the sample is placed, or the probe in a first direction;
irradiating, by the probe, the sample with the light to receive, by the probe, the first reflected light, the second reflected light, and the third reflected light at a plurality of positions in the first direction; and
calculating the first distance and the thickness of the sample at the plurality of positions in the first direction.
12. The optical measuring method according to claim 11 , further comprising:
moving at least one of the stage or the probe in a second direction, which intersects the first direction;
irradiating, by the probe, the sample with the light to receive, by the probe, the first reflected light, the second reflected light, and the third reflected light at a plurality of positions in the second direction; and
calculating the first distance and the thickness of the sample at the plurality of positions in the second direction.
13. An optical measurement method, which is performed with use of a probe including a transmissive optical member having a reference surface, the optical measurement method comprising:
irradiating a sample with light through the reference surface with use of the probe;
receiving, by the probe, a first reflected light from the reference surface, a second reflected light from a front side of the sample, and a third reflected light from a back side of the sample;
calculating a first distance from the reference surface to the sample with use of a first reflection interference light to be generated by the first reflected light and the second reflected light, and calculating a thickness of the sample with use of a second reflection interference light to be generated by the second reflected light and the third reflected light;
irradiating, under a state in which the sample is not placed on a stage, the stage with the light through the reference surface with use of the probe to receive, by the probe, the first reflected light, and a fourth reflected light from a surface of the stage;
calculating a second distance from the reference surface to the stage with use of a third reflection interference light to be generated by the first reflected light and the fourth reflected light; and
calculating a third distance between the back side of the sample and the stage with the second distance being an additive element, and with the first distance and the thickness of the sample being subtractive elements.
14. The optical measuring method according to claim 13 , further comprising:
moving, under the state in which the sample is not placed on the stage, at least one of the stage or the probe in a first direction;
irradiating, by the probe, under the state in which the sample is not placed on the stage, the stage with the light to receive, by the probe, the first reflected light and the fourth reflected light at a plurality of positions in the first direction;
moving, under a state in which the sample is placed on the stage, at least one of the stage or the probe in the first direction;
irradiating, by the probe, under the state in which the sample is placed on the stage, the sample with the light to receive, by the probe, the first reflected light, the second reflected light, and the third reflected light at a plurality of positions corresponding to the plurality of positions at which the fourth reflected light is received; and
calculating the thickness of the sample, the first distance, the second distance, and the third distance at the plurality of positions in the first direction.
15. The optical measuring method according to claim 14 , further comprising:
moving, under the state in which the sample is not placed on the stage, at least one of the stage or the probe in a second direction, which intersects the first direction;
irradiating, by the probe, under the state in which the sample is not placed on the stage, the stage with the light to receive, by the probe, the first reflected light and the fourth reflected light at a plurality of positions in the second direction;
moving, under the state in which the sample is placed on the stage, at least one of the stage or the probe in the second direction;
irradiating, by the probe, under the state in which the sample is placed on the stage, the sample with the light to receive, by the probe, the first reflected light, the second reflected light, and the third reflected light at a plurality of positions corresponding to the plurality of positions at which the fourth reflected light is received; and
calculating the thickness of the sample, the first distance, the second distance, and the third distance at the plurality of positions in the second direction.
16. The optical measurement method according to claim 13 , further comprising measuring a spectrum of measurement reflected light including the first reflection interference light and the second reflection interference light with use of a spectrometer,
wherein the transmissive optical member has an optical thickness that is larger than an upper limit value of a coherent optical thickness, which is defined by an upper limit value of a measurement wavelength range of the spectrometer and by a wavelength resolution of the spectrometer.
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US11215443B2 (en) * | 2019-10-24 | 2022-01-04 | Otsuka Electronics Co., Ltd. | Optical measurement apparatus and optical measurement method |
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JP6333351B1 (en) * | 2016-12-27 | 2018-05-30 | Ntn株式会社 | Measuring device, coating device, and film thickness measuring method |
JP6751214B1 (en) * | 2020-02-12 | 2020-09-02 | デクセリアルズ株式会社 | Measuring device and film forming device |
CN111578852A (en) * | 2020-05-25 | 2020-08-25 | 西安奕斯伟硅片技术有限公司 | Epitaxial wafer thickness measuring method and system |
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JP4081538B2 (en) * | 2001-08-24 | 2008-04-30 | 独立行政法人産業技術総合研究所 | Interference fringe analysis method for transparent parallel plates |
WO2007067819A2 (en) * | 2005-12-09 | 2007-06-14 | Precision Human Biolaboratory | Optical molecular detection |
JP4834847B2 (en) | 2007-10-05 | 2011-12-14 | 大塚電子株式会社 | Multilayer film analysis apparatus and multilayer film analysis method |
TWI426258B (en) * | 2010-12-06 | 2014-02-11 | Univ Nat Central | Real - time Monitoring of Film Growth by Dynamic Interferometer |
JP5721586B2 (en) * | 2011-08-12 | 2015-05-20 | 大塚電子株式会社 | Optical characteristic measuring apparatus and optical characteristic measuring method |
JP2013130417A (en) * | 2011-12-20 | 2013-07-04 | Nippon Electric Glass Co Ltd | Warpage measuring method for glass pane and manufacturing method of glass pane |
TWI464369B (en) * | 2012-02-29 | 2014-12-11 | Univ Feng Chia | And a method and a method for detecting three-dimensional surface profile and optical grade surface roughness at the same time |
JP6196119B2 (en) * | 2013-10-11 | 2017-09-13 | 大塚電子株式会社 | Shape measuring apparatus and shape measuring method |
JP6457846B2 (en) * | 2015-03-11 | 2019-01-23 | 株式会社溝尻光学工業所 | Method and apparatus for measuring shape of transparent plate |
JP6725988B2 (en) * | 2016-01-26 | 2020-07-22 | 大塚電子株式会社 | Thickness measuring device and thickness measuring method |
DE102016203442A1 (en) * | 2016-03-02 | 2017-09-07 | Carl Zeiss Smt Gmbh | Projection exposure apparatus and method for measuring a projection objective |
JP6750813B2 (en) * | 2016-07-01 | 2020-09-02 | 株式会社溝尻光学工業所 | Shape measuring method and shape measuring device for transparent plate |
JP6802011B2 (en) * | 2016-09-02 | 2020-12-16 | 株式会社ディスコ | Thickness measuring device |
US10571248B2 (en) * | 2017-01-09 | 2020-02-25 | Kla-Tencor Corporation | Transparent film error correction pattern in wafer geometry system |
JP6285597B1 (en) * | 2017-06-05 | 2018-02-28 | 大塚電子株式会社 | Optical measuring apparatus and optical measuring method |
TWI794416B (en) * | 2018-02-28 | 2023-03-01 | 美商賽格股份有限公司 | Metrology of multi-layer stacks and interferometer system |
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