US20190341494A1 - Semiconductor device and manufacturing method thereof - Google Patents
Semiconductor device and manufacturing method thereof Download PDFInfo
- Publication number
- US20190341494A1 US20190341494A1 US16/177,464 US201816177464A US2019341494A1 US 20190341494 A1 US20190341494 A1 US 20190341494A1 US 201816177464 A US201816177464 A US 201816177464A US 2019341494 A1 US2019341494 A1 US 2019341494A1
- Authority
- US
- United States
- Prior art keywords
- copper
- patterned layer
- layer
- oxynitride
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 87
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000010949 copper Substances 0.000 claims abstract description 256
- 229910052802 copper Inorganic materials 0.000 claims abstract description 218
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 190
- 239000010409 thin film Substances 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims description 96
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 37
- 229910052750 molybdenum Inorganic materials 0.000 claims description 37
- 239000011733 molybdenum Substances 0.000 claims description 37
- -1 copper nitride Chemical class 0.000 claims description 28
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 17
- 239000001272 nitrous oxide Substances 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 7
- 238000005240 physical vapour deposition Methods 0.000 claims description 6
- 229910000077 silane Inorganic materials 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 10
- 101000606064 Cupiennius salei Cupiennin-1a Proteins 0.000 description 7
- 101000760666 Cupiennius salei Cupiennin-2a Proteins 0.000 description 7
- 101000761027 Cupiennius salei Cupiennin-1c Proteins 0.000 description 6
- 101000760654 Cupiennius salei Cupiennin-2c Proteins 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 230000008901 benefit Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 101000606068 Cupiennius salei Cupiennin-1b Proteins 0.000 description 2
- 101000760656 Cupiennius salei Cupiennin-2b Proteins 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910016547 CuNx Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- YSRUGFMGLKANGO-UHFFFAOYSA-N zinc hafnium(4+) indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[In+3].[Hf+4] YSRUGFMGLKANGO-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
- H01L21/28061—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a metal or metal silicide formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53233—Copper alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Definitions
- the invention relates to an electronic device and a manufacturing method thereof, and particularly related to a semiconductor device and a manufacturing method thereof.
- Copper (Cu) has advantages such as high electric conductivity, low electrical resistance, and low cost. Therefore, copper is often used as one of the materials of a source and a drain of a thin film transistor. However, when the adhesion of copper and the thin film thereon is poor, copper is prone to be damaged owing to external moisture, and the electrical property of the thin film transistor is thus affected. For example, when the copper layers of the source and the drain deteriorate, an I-V curve of a drain current and a gate voltage of the thin film transistor offsets, and thus leads to current leakage. At this time, if a display panel is adopted the thin film transistor as a pixel switch, the thin film transistor fails to normally turn off pixels, and an issue of display error is occurred. For example, black checkered screen in a black and white checkered screen are whitened.
- the invention provides a semiconductor device, which is less likely to have an issue of leakage current, and has better reliability.
- An embodiment of the invention provides a manufacturing method of the semiconductor device, which can realize a semiconductor device that is less likely to have an issue of leakage current and has better reliability.
- the embodiment of the invention includes a first substrate and a thin film transistor.
- the thin film transistor is disposed on the first substrate.
- the thin film transistor includes a gate, a semiconductor pattern, a first insulating layer, a source and a drain.
- the first insulating layer is disposed between the gate and the semiconductor pattern.
- the source and the drain are separated from each other and disposed corresponding to the semiconductor pattern.
- At least one of the source and the drain has a first copper patterned layer and a first copper oxynitride patterned layer.
- the first copper oxynitride patterned layer covers the first copper patterned layer.
- the first copper patterned layer is disposed between the first copper oxynitride patterned layer and the first substrate.
- the first copper patterned layer has a first top surface, a first bottom surface and a first sidewall connected between the first bottom surface and the first top surface.
- the first copper oxynitride patterned layer covers the first top surface and the first sidewall.
- the at least one of the source and the drain further has the first molybdenum patterned layer.
- the first copper patterned layer is disposed between the first copper oxynitride patterned layer and the first molybdenum patterned layer.
- the semiconductor device further includes a data line, electrically connected to the source of the thin film transistor.
- the data line has the second copper patterned layer and the second copper oxynitride patterned layer.
- the second copper oxynitride patterned layer covers the second copper patterned layer.
- the second copper patterned layer is disposed between the second copper oxynitride patterned layer and the first substrate.
- the second copper patterned layer has a second top surface, a second bottom surface and a second sidewall connected between the second bottom surface and the second top surface.
- the second copper oxynitride patterned layer covers the second top surface and the second sidewall.
- the data line further has a second molybdenum patterned layer.
- the second copper patterned layer is disposed between the second copper oxynitride patterned layer and the second molybdenum patterned layer.
- the first copper oxynitride patterned layer directly contacts with the first copper patterned layer.
- the semiconductor device further includes a silicon oxide layer, covering the first copper oxynitride patterned layer and contacting with the first copper oxynitride patterned layer.
- the semiconductor device further includes a pixel electrode, electrically connected to the drain.
- An embodiment of the invention provides a manufacturing method of the semiconductor device including the following steps: providing a first substrate; forming a gate, a first insulating layer, a semiconductor pattern on the first substrate, wherein the first insulating layer is disposed between the gate and the semiconductor pattern; forming a copper material layer on the first substrate by using a physical vapor deposition; introducing nitrogen to form a copper nitride material layer on the copper material layer; patterning the copper material layer and the copper nitride material layer to form a first copper material layer and a first copper nitride material layer; and introducing nitrous oxide, nitrous oxide reacting with first copper material layer and the first copper nitride material layer to form a first copper oxynitride patterned layer and a first copper patterned layer, the first copper oxynitride patterned layer covering the first copper patterned layer, wherein the first copper patterned layer and the first copper oxynitride patterned layer comprise a source and a drain, and the source and
- the manufacturing method of the semiconductor device further includes: introducing silane after forming the first copper oxynitride patterned layer, the silane reacting with the nitrous oxide to form a silicon oxide layer, wherein the silicon oxide layer covers the source and the drain.
- the surface of at least one of the source and the drain has a copper oxynitride patterned layer, and/or the surface of the data line has a copper oxynitride patterned layer.
- the copper oxynitride patterned layer has a dense material property, and/or the adhesion of the copper oxynitride patterned layer and the silicon oxide layer is excellent. Accordingly, external moisture is not easy to invade into the copper patterned layer of at least one of the source and the drain. Therefore, the semiconductor of the embodiment of the invention has good reliability.
- FIG. 1A to FIG. 1F are manufacturing process profile diagrams according to an embodiment of the semiconductor device of the invention.
- FIG. 2 is a top schematic diagram of the semiconductor device of an embodiment of the invention.
- FIG. 3 is a cross-sectional schematic diagram of the semiconductor device according to a comparative example.
- FIG. 4 is a partial sectional image of the semiconductor device under an electron microscope according to a comparative example.
- FIG. 5 is a partial sectional image of the semiconductor device under an electron microscope according to an embodiment of the invention.
- the usages of “approximately”, “similar to”, or “substantially” indicated throughout the specification include the indicated value and an average value having an acceptable deviation range, which is a certain value confirmed by people skilled in the art, and is a certain amount considered the discussed measurement and measurement-related deviation (that is, the limitation of measurement system). For example, “approximately” may be indicated that within one or more standard deviations of the value, or within ⁇ 30%, ⁇ 20%, ⁇ 10%, ⁇ 5%. Furthermore, the usages of “approximately”, “similar to” or “substantially” indicated throughout the specification may be referred to a more acceptable deviation scope or standard deviation depending on optical properties, etching properties, or other properties, and all properties may not be applied with one standard deviation.
- Exemplary embodiments are described herein with reference to cross section illustrations that are schematic illustrations of idealized embodiments. Therefore, variations in the shapes of the illustrations of, for example, the result of manufacturing techniques and/or tolerances, are to be expected. Thus, embodiments described herein should not be interpreted as a certain shape limited to areas illustrated in the context, but are to include deviations in shapes that result, for example, from manufacturing. For instance, illustrated or described flat areas may usually have rough and/or non-linear features. Besides, the illustrated acute angle may be round. Therefore, areas illustrated in drawing are substantially schematic, their shapes are not intended to illustrate the exact shapes of the areas, and they are not intended to limit the claimed scopes.
- FIG. 1A to FIG. 1F are manufacturing process profile diagrams according to an embodiment of the semiconductor device of the invention.
- FIG. 2 is a top schematic diagram of the semiconductor device of an embodiment of the invention. Specifically, the cross section of FIG. 1F corresponds to the cross section line A-A′ of FIG. 2 .
- a first substrate 110 is provided.
- a gate 122 a first insulating layer 124 and a semiconductor 126 are formed sequentially on the first substrate 110 .
- the first insulating layer 124 covers the gate 122 .
- the semiconductor pattern 126 is disposed on the first insulating layer 124 .
- the first insulating layer 124 is disposed between the gate 122 and the semiconductor pattern 126 .
- a scan line SL illustrated in FIG. 2
- the invention is not limited thereto.
- the gate 122 and the scan line SL are formed.
- the material of the gate 122 may be copper (Cu), chromium (Cr), tungsten (W), titanium (Ti), tantalum (Ta), molybdenum (Mo), other suitable conductive materials, or the combination of at least two of the aforementioned materials.
- the invention is not limited thereto.
- the first insulating layer 124 is formed.
- the material of the first insulating layer 124 may be silicon dioxide (SiO 2 ), silicon nitride (Si 3 N 4 ), hafnium dioxide (HfO 2 ), or the combination of at least two of the aforementioned materials.
- the invention is not limited thereto.
- the first insulating layer 124 may also be other high dielectric constant materials, so as to effectively electrically isolate the gate 122 and the semiconductor pattern 126 .
- the semiconductor pattern 126 is, for example, a multi-layer film stacking structure.
- the multi-layer film may include semiconductor materials (not illustrated) and an ohmic contact layer (not illustrated).
- the semiconductor material of the semiconductor pattern 126 may be selectively adopted indium gallium zinc oxide (IGZO), hafnium indium zinc oxide (HIZO), indium zinc oxide (IZO) or other metal oxide, so that the subsequently formed thin film transistor 120 (illustrated in FIG. 1D ) still has high electron mobility in the case of semiconductor pattern 126 adopted a small-area.
- the semiconductor material of the semiconductor pattern 126 may also be adopted as other suitable kinds of semiconductors.
- the invention is not limited whether the semiconductor pattern 126 has to include the ohmic contact layer.
- the molybdenum material layer Mo and the copper material layer Cu may be selectively and subsequently formed on the first substrate 110 , where the molybdenum material layer Mo covers the semiconductor pattern 126 , and the copper material layer Cu is disposed on the molybdenum material layer Mo.
- the molybdenum material layer Mo and the copper material layer Cu are formed.
- the invention is not limited thereto.
- nitrogen gas (N 2 ) is introduced, so as to form a copper nitride layer CuN on the copper material layer Cu.
- nitrogen gas (N 2 ) is introduced, so as to form a copper nitride layer CuN on the copper material layer Cu.
- nitrogen gas (N 2 ) is introduced, so as to form a copper nitride layer CuN on the copper material layer Cu.
- FIG. 1A and FIG. 1B nitrogen gas (N 2 ) is introduced, so as to form a copper nitride layer CuN on the copper material layer Cu.
- nitrogen gas (N 2 ) is introduced, so as to form a copper nitride layer CuN on the copper material layer Cu.
- the copper nitride material layer CuN, the copper material layer Cu and the molybdenum material layer Mo are patterned, such that the copper nitride material layer CuN forms a first copper nitride material layer CuN′-1 and a second copper nitride material layer CuN′-2, the copper material layer Cu forms the first copper material layer Cu′-1 and the second copper material layer Cu′-2, and the molybdenum material layer Mo forms a first molybdenum layer Mo′-1 and a second molybdenum layer Mo′-2.
- the same patterned photoresist may be used as a mask, the copper nitride material layer CuN, the copper material layer Cu and the molybdenum material layer Mo are patterned to form the first copper nitride material layer CuN′-1, the second copper nitride material layer CuN′-2, the first copper material layer Cu′-1, the second copper material layer Cu′-2, the first molybdenum material layer Mo′-1 and the second molybdenum material layer Mo′-2, where the first copper nitride material layer CuN′-1, the first copper material layer Cu′-1, and the first molybdenum material layer Mo′-1 are overlapped with each other, and the second copper nitride material layer CuN′-2, the second copper material layer Cu′-2 and the second molybdenum material layer Mo′-2 are overlapped with each other.
- the same type of etching liquid is applied.
- a part of the copper nitride material layer CuN, a part of the copper material layer Cu and a part of the molybdenum material layer Mo are not shielded by the patterned photoresist, and the part of the copper nitride material layer CuN, the part of the copper material layer Cu and the part of the molybdenum material layer Mo are removed so as to form the first copper nitride material layer CuN′-1, the second copper nitride material layer CuN′-2, the first copper material layer Cu′-1, the second copper material layer Cu′-2, the first molybdenum material layer Mo′-1 and the second molybdenum material layer Mo′-2.
- the invention is not limited thereto.
- a plurality of types of etching liquid are applied, and the part of the copper nitride material layer CuN, the part of the copper material layer Cu and the part of the molybdenum material layer Mo that are not shielded by the patterned photoresist may be sequentially removed.
- nitrous oxide (N 2 O) is introduced.
- the nitrous oxide reacts at least with the first copper nitride material layer CuN′-1 and a sidewall area Cu′-1e of the first copper material layer Cu′-1 to form the first copper oxynitride patterned layer CuNO-1, where part of the first copper material layer Cu′-1, which is not exposed to nitrous oxide (that is, other area of the first copper material layer Cu′-1 except the sidewall area Cu′-1e), forms the first copper patterned layer Cu-1.
- the nitrous oxide reacts with the second copper nitride material layer CuN′-2 and the sidewall area Cu′-2e of the second copper material layer Cu′-2 to form the second copper oxynitride patterned layer CuNO-2, where part of the second copper material layer Cu′-2, which is not exposed in the nitrous oxide (that is, other area of the second copper material layer Cu′-2 except the sidewall area Cu′-2e) forms the second copper patterned layer Cu-2.
- the first copper oxynitride patterned layer CuNO-1 and the second copper oxynitride patterned layer CuNO-2 may be illustrated as chemical formula CuN x O y , where x and y are positive integers.
- the first copper oxynitride patterned layer CuNO-1 covers the first copper patterned layer Cu-1.
- the first copper patterned layer Cu-1 has a first top surface Cu-1a, a first bottom surface Cu-1b and a first sidewall Cu-1c connected between the first bottom surface Cu-1b and the first top surface Cu-1a, whereas the first copper oxynitride patterned layer CuNO-1 covers the first top surface Cu-1a and the first sidewall Cu-1c.
- the first copper patterned layer Cu-1 is disposed between the first copper oxynitride patterned layer CuNO-1 and the first molybdenum patterned layer Mo-1.
- the first copper oxynitride patterned layer CuNO-1 may directly contact with the first copper patterned layer Cu-1.
- the first copper patterned layer Cu-1 may directly contact with the first molybdenum patterned layer Mo-1.
- the second copper patterned layer Cu-2 has a second top surface Cu-2a, a second bottom surface Cu-2b and a second sidewall Cu-2c connected between the second bottom surface Cu-2b and the second top surface Cu-2a, whereas the second copper oxynitride patterned layer CuNO-2 covers a second top surface Cu-2a and a second sidewall Cu-2c.
- the second copper patterned layer Cu-2 is disposed between the second copper oxynitride patterned layer CuNO-2 and the second molybdenum patterned layer Mo-2.
- the second copper oxynitride patterned layer CuNO-2 may directly contact with the second copper patterned layer Cu-2.
- the second copper patterned layer Cu-2 may directly contact with the second molybdenum patterned layer Mo-2.
- part of the first molybdenum patterned layer Mo-1, part of the first copper patterned layer Cu-1 and part of the first copper oxynitride patterned layer CuNO-1 may consist of a source 128 a .
- Another part of the first molybdenum patterned layer Mo-1, another part of the first copper patterned layer Cu-1 and another part of the first copper oxynitride patterned layer CuNO-1 may consist of a drain 128 b .
- the source 128 a and the drain 128 b are structurally separated from each other and are disposed corresponding to the semiconductor pattern 126 .
- the second molybdenum patterned layer Mo-2, the second copper patterned layer Cu-2 and the second copper oxynitride patterned layer CuNO-2 may consist a data line DL, where the data line DL and the source 128 a are electrically connected.
- the gate 122 , the first insulating layer 124 , the semiconductor pattern 126 , the source 128 a and the drain 128 b may constitute the thin film transistor 120 .
- the thin film transistor 120 is an example of a bottom gate thin film transistor (bottom gate TFT).
- the invention is not limited thereto.
- the thin film transistor 120 may be a top gate thin film transistor (top gate TFT) or other suitable type of thin film transistor.
- a film thickness T 1 of part of the first copper oxynitride patterned layer CuNO-1 on the first top surface Cu-1a may be slightly different from a film thickness t 1 of part of the first copper oxynitride patterned layer CuNO-1 on the first sidewall Cu-1c
- the film thickness T 1 of part of the first copper oxynitride patterned layer CuNO-1 on the first top surface Cu-1a may be slightly greater than the film thickness t 1 of part of the first copper oxynitride patterned layer CuNO-1 on the first sidewall Cu-1c
- the film thickness T 2 of part of the second copper oxynitride patterned layer CuNO-2 on the second top surface Cu-2a may be slightly greater than the film thickness t 2 of part of the second copper oxynitride patterned layer CuNO-2 on the second sidewall Cu-2c, for example, 300 ⁇ T 1 ⁇ 600 ⁇ , 200 ⁇ t 1 ⁇ 500 ⁇ , 300 ⁇ T 2 ⁇ 600 ⁇ , and 200 ⁇ t 2 ⁇ 500 ⁇ .
- the film thickness T 1 of part of the first copper oxynitride patterned layer CuNO-1 on the first top surface Cu-1a may also be substantially equal to the film thickness t 1 of part of the first copper oxynitride patterned layer CuNO-1 on the first sidewall Cu-1c.
- the film thickness T 2 of part of the second copper oxynitride patterned layer CuNO-2 on the second top surface Cu-2a may be substantially equal to the film thickness t 2 of part of the second copper oxynitride patterned layer CuNO-2 on the second sidewall Cu-2c.
- silane SiH 4
- SiH 4 silane
- the silicon oxide layer 130 covers the source 128 a and the drain 128 b .
- the silicon oxide layer 130 covers the first copper oxynitride patterned layer CuNO-1 and the second copper oxynitride patterned layer CuNO-2, and the silicon oxide layer 130 contacts with the first copper oxynitride patterned layer CuNO-1 and the second copper oxynitride patterned layer CuNO-2.
- the silicon oxide layer 130 further covers part of the semiconductor pattern 126 which is not covered by the source 128 a and the drain 128 b.
- a contact window H is formed in the silicon oxide layer 130 to expose part of the drain 128 b .
- a pixel electrode 140 is formed on the silicon oxide layer 130 .
- the pixel electrode 140 is electrically connected to the drain 128 b via the contact window H.
- a semiconductor device 100 of the embodiment is completed.
- the scan line SL intersects with the data line DL. It can be acquired from FIG. 2 that the scan line SL and the gate 122 belong to the same first conductive layer, and the source 128 , the drain 128 b and the data line DL belong to the same second conductive layer.
- the surface of the data line DL has the second copper oxynitride patterned layer CuNO-2.
- the surface of the source 128 and the surface of the drain 128 b have the first copper oxynitride patterned layer CuNO-1.
- the first copper oxynitride patterned layer CuNO-1 of the source 128 a and the drain 128 b and the second copper oxynitride patterned layer CuNO-2 of the data line DL have dense material structure
- the first copper oxynitride patterned layer CuNO-1 of the source 128 a and the drain 128 b covers the first copper patterned layer Cu-1 of the source 128 a and the drain 128 b
- the second copper oxynitride patterned layer CuNO-2 of the data line DL covers the second copper patterned layer Cu-2 of the data line DL.
- the first copper patterned layer Cu-1 of the source 128 a and the drain 128 b and the second copper patterned layer Cu-2 of the data line DL are less likely to be invaded by the external moisture and thus reduce deterioration. Examples are illustrated as follows by using FIG. 3 , FIG. 4 , and FIG. 5 .
- FIG. 3 is a cross-sectional schematic diagram of the semiconductor device according to a comparative example. Please refer to FIG. 1F and FIG. 3 .
- a semiconductor device 200 of the comparative example is similar to the semiconductor device 100 of the embodiment of the invention in FIG. 1F . The difference between the two is that: a source 128 a ′ and a drain 128 b ′ of the semiconductor device 200 are stacked by a molybdenum patterned layer Mo′ and a copper patterned layer Cu′.
- the copper patterned layer Cu′ of a comparative example fails to be covered by a copper oxynitride patterned layer.
- FIG. 4 is a partial sectional image of the semiconductor device under an electron microscope according to a comparative example.
- the partial sectional image of the semiconductor device of FIG. 4 corresponds to a partial sectional image of R 2 of the semiconductor device 200 of FIG. 3 .
- FIG. 4 illustrates the partial sectional image of R 2 of the semiconductor device 200 of the comparative example before undergoing a high temperature and humidity testing (as illustrated in the column of 0-hour of FIG. 4 ) and the partial sectional image of R 2 of the semiconductor device 200 of the comparative example after undergoing a high temperature and humidity testing (as illustrated in the column of 1000-hour of FIG. 4 ).
- the copper patterned layer Cu′ is invaded by moisture and expands around. The issue of leakage current of the thin film transistor 120 is thus generated.
- FIG. 5 is a partial sectional image of the semiconductor device under an electron microscope according to an embodiment of the invention.
- the partial sectional image of the semiconductor device of FIG. 5 corresponds to a partial sectional image R 1 of the semiconductor device 100 of FIG. 1F .
- FIG. 5 which illustrates the partial sectional image R 1 of the semiconductor device 100 of the comparative example before undergoing a high temperature and humidity testing (as illustrated in the column of 0-hour of FIG. 5 ) and the partial sectional image R 1 of the semiconductor device 100 of the comparative example after undergoing a high temperature and humidity testing (as illustrated in the column of 1000-hour of FIG. 5 ).
- FIG. 5 illustrates the partial sectional image R 1 of the semiconductor device 100 of the comparative example before undergoing a high temperature and humidity testing (as illustrated in the column of 0-hour of FIG. 5 ) and the partial sectional image R 1 of the semiconductor device 100 of the comparative example after undergoing a high temperature and humidity testing (as illustrated in the column of 1000-hour of FIG.
- the adhesion of the copper oxynitride patterned layer (including the first copper oxynitride patterned layer CuNO-1 and the second copper oxynitride patterned layer CuNO-2) and the silicon oxide layer 130 are excellent, after the semiconductor device 100 undergoes the 1000-hour high temperature and humidity testing, the copper patterned layer (including the first copper patterned layer Cu-1 and the second copper patterned layer Cu-2) is less likely to be invaded by moisture, and the issue of leakage of the thin film transistor 120 is less likely to be generated.
- the reliability of the semiconductor device 100 of the embodiment is excellent.
- the surface of at least one of the source and the drain has the copper oxynitride patterned layer, and/or the surface of the data line has the copper oxynitride patterned layer, as the copper oxynitride patterned layer has dense material properties, and/or the adhesion of the copper oxynitride patterned layer and the silicon oxide layer is excellent. Accordingly, it is less likely for the external moisture to invade the copper patterned layer of the at least one of the source and the drain. Therefore, the reliability of the semiconductor device of the embodiment of the invention is excellent.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Thin Film Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17/088,525 US11367795B2 (en) | 2018-05-02 | 2020-11-03 | Semiconductor device and manufacturing method thereof |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW107114836A TWI671913B (zh) | 2018-05-02 | 2018-05-02 | 半導體裝置及其製造方法 |
TW107114836 | 2018-05-02 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US17/088,525 Division US11367795B2 (en) | 2018-05-02 | 2020-11-03 | Semiconductor device and manufacturing method thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
US20190341494A1 true US20190341494A1 (en) | 2019-11-07 |
Family
ID=64085133
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US16/177,464 Abandoned US20190341494A1 (en) | 2018-05-02 | 2018-11-01 | Semiconductor device and manufacturing method thereof |
US17/088,525 Active 2039-02-25 US11367795B2 (en) | 2018-05-02 | 2020-11-03 | Semiconductor device and manufacturing method thereof |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US17/088,525 Active 2039-02-25 US11367795B2 (en) | 2018-05-02 | 2020-11-03 | Semiconductor device and manufacturing method thereof |
Country Status (3)
Country | Link |
---|---|
US (2) | US20190341494A1 (zh) |
CN (1) | CN108807550B (zh) |
TW (1) | TWI671913B (zh) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050122443A1 (en) * | 2003-12-04 | 2005-06-09 | Lg.Philips Lcd Co., Ltd. | Array substrate for liquid crystal display device and fabricating method thereof |
US20090101903A1 (en) * | 2007-10-22 | 2009-04-23 | Au Optronics Corporation | Thin film transistor and method for manufaturing thereof |
US20130134429A1 (en) * | 2011-11-29 | 2013-05-30 | Panasonic Corporation | Thin-film transistor and thin-film transistor manufacturing method |
US20180033893A1 (en) * | 2015-05-08 | 2018-02-01 | Lg Chem, Ltd. | Thin-film transistor substrate and display device comprising same |
US20180204651A1 (en) * | 2015-07-16 | 2018-07-19 | Kaneka Corporation | Transparent electrode film, dimming element, and method for manufacturing transparent electrode film |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20070049278A (ko) * | 2005-11-08 | 2007-05-11 | 삼성전자주식회사 | 배선, 이를 포함하는 박막 트랜지스터 기판과 그 제조 방법 |
KR20080008562A (ko) | 2006-07-20 | 2008-01-24 | 삼성전자주식회사 | 어레이 기판의 제조방법, 어레이 기판 및 이를 갖는표시장치 |
KR20090024383A (ko) * | 2007-09-04 | 2009-03-09 | 삼성전자주식회사 | 박막 트랜지스터 표시판, 이의 제조 방법 및 이를 포함하는표시 장치 |
KR101296654B1 (ko) | 2007-12-26 | 2013-08-14 | 엘지디스플레이 주식회사 | 구리 배선, 이를 이용한 평판 표시 장치, 및 그 구리배선의 형성 방법 |
US8270178B2 (en) * | 2010-03-22 | 2012-09-18 | Au Optronics Corporation | Active device array substrate |
JP2012027159A (ja) * | 2010-07-21 | 2012-02-09 | Kobe Steel Ltd | 表示装置 |
JP5171990B2 (ja) * | 2011-05-13 | 2013-03-27 | 株式会社神戸製鋼所 | Cu合金膜および表示装置 |
EP2916360A4 (en) * | 2012-11-02 | 2016-06-22 | Boe Technology Group Co Ltd | THIN-LAYER TRANSISTOR AND MANUFACTURING METHOD, ARRAY SUBSTRATE, DISPLAY DEVICE AND BARRIER LAYER THEREFOR |
CN103765597B (zh) * | 2012-11-02 | 2016-09-28 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制作方法、阵列基板、显示装置和阻挡层 |
-
2018
- 2018-05-02 TW TW107114836A patent/TWI671913B/zh active
- 2018-06-12 CN CN201810601974.3A patent/CN108807550B/zh active Active
- 2018-11-01 US US16/177,464 patent/US20190341494A1/en not_active Abandoned
-
2020
- 2020-11-03 US US17/088,525 patent/US11367795B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050122443A1 (en) * | 2003-12-04 | 2005-06-09 | Lg.Philips Lcd Co., Ltd. | Array substrate for liquid crystal display device and fabricating method thereof |
US20090101903A1 (en) * | 2007-10-22 | 2009-04-23 | Au Optronics Corporation | Thin film transistor and method for manufaturing thereof |
US20130134429A1 (en) * | 2011-11-29 | 2013-05-30 | Panasonic Corporation | Thin-film transistor and thin-film transistor manufacturing method |
US20180033893A1 (en) * | 2015-05-08 | 2018-02-01 | Lg Chem, Ltd. | Thin-film transistor substrate and display device comprising same |
US20180204651A1 (en) * | 2015-07-16 | 2018-07-19 | Kaneka Corporation | Transparent electrode film, dimming element, and method for manufacturing transparent electrode film |
Also Published As
Publication number | Publication date |
---|---|
TWI671913B (zh) | 2019-09-11 |
US20210050454A1 (en) | 2021-02-18 |
US11367795B2 (en) | 2022-06-21 |
CN108807550B (zh) | 2021-04-27 |
CN108807550A (zh) | 2018-11-13 |
TW201947774A (zh) | 2019-12-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9142573B1 (en) | Thin film transistor substrate and method for producing same | |
US7608494B2 (en) | Thin film transistor array panel and a method for manufacturing the same | |
CN102456696B (zh) | 显示装置及其制造方法 | |
US6969889B2 (en) | Wire structure, a thin film transistor substrate of using the wire structure and a method of manufacturing the same | |
KR101522481B1 (ko) | 어레이 기판을 제조하는 방법, 어레이 기판 및 표시 장치 | |
US8723174B2 (en) | Thin film transistor, contact structure, substrate, display device, and methods for manufacturing the same | |
US9812578B2 (en) | Thin film transistor and display device using the same | |
US8877534B2 (en) | Display device and method for manufacturing the same | |
TWI404212B (zh) | 薄膜電晶體陣列面板及其製造之方法 | |
US8164097B2 (en) | Thin film transistor array panel and manufacturing method thereof | |
US8610871B2 (en) | Method for forming multilayer structure, method for manufacturing display panel, and display panel | |
US20170352689A1 (en) | Element substrate and display device | |
KR20140081412A (ko) | 박막 트랜지스터 표시판 및 그 제조 방법 | |
US8093595B2 (en) | Thin film array panel and manufacturing method thereof | |
CN101087004A (zh) | Tft阵列衬底、其制造方法以及显示装置 | |
US7112458B2 (en) | Method of forming a liquid crystal display | |
US11367795B2 (en) | Semiconductor device and manufacturing method thereof | |
US11843005B2 (en) | Half via hole structure, manufacturing method thereof, array substrate, and display panel | |
KR100767379B1 (ko) | 박막 트랜지스터 기판의 제조 방법 | |
KR20110060375A (ko) | 어레이 기판 및 이의 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: AU OPTRONICS CORPORATION, TAIWAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:CHIEN, TING-FONG;YEH, PO-LIANG;WU, CHEN-CHUNG;AND OTHERS;SIGNING DATES FROM 20181024 TO 20181025;REEL/FRAME:047427/0573 |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NON FINAL ACTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: FINAL REJECTION MAILED |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |