US20190172760A1 - Micro lighting device - Google Patents
Micro lighting device Download PDFInfo
- Publication number
- US20190172760A1 US20190172760A1 US15/881,799 US201815881799A US2019172760A1 US 20190172760 A1 US20190172760 A1 US 20190172760A1 US 201815881799 A US201815881799 A US 201815881799A US 2019172760 A1 US2019172760 A1 US 2019172760A1
- Authority
- US
- United States
- Prior art keywords
- electrode
- luminescent device
- semiconductor layer
- main
- disposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 12
- 239000004020 conductor Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000010586 diagram Methods 0.000 description 24
- 230000008439 repair process Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000003698 laser cutting Methods 0.000 description 3
- 230000007257 malfunction Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000036632 reaction speed Effects 0.000 description 3
- 230000008263 repair mechanism Effects 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 238000001182 laser chemical vapour deposition Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910019813 Cr(CO)6 Inorganic materials 0.000 description 1
- 229910017147 Fe(CO)5 Inorganic materials 0.000 description 1
- 229910017333 Mo(CO)6 Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910008940 W(CO)6 Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/22—Connection or disconnection of sub-entities or redundant parts of a device in response to a measurement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0756—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Definitions
- the present invention is related to a micro lighting device, and more particularly, to a micro lighting device with repair mechanism.
- LEDs light-emitting diodes
- LCD liquid crystal display
- LEDs are also widely used as indoor/outdoor lighting devices in place of fluorescent of incandescent lamps.
- the size of traditional LED arrays is the dimension of millimeters (mm).
- the size of micro LED arrays may be reduced to the dimension of micrometers ( ⁇ m) while inheriting the same good performances regarding power consumption, brightness, resolution, color saturation, reaction speed, life time and efficiency.
- a micro LED manufacturing process a thin-film, miniaturized and array design is adopted so that multiple micro LEDs are fabricated in the dimension of merely 1-10 ⁇ m.
- these micro LEDs are mass transferred to be disposed on another circuit board. Protection layers and upper electrodes may be formed in a physical deposition process before packaging the upper substrate. Since the manufacturing process of micro LEDs is very complicated, there is a need to improve manufacturing yield.
- the present invention provides a micro lighting device including a source line, a ground line, a main luminescent device having a first electrode and a second electrode, and a redundant luminescent device having a third electrode and a fourth electrode.
- the first electrode is electrically connected to the source line and the second electrode is electrically connected to the ground line and at least one of the third electrode and the fourth electrode is electrically isolated from both the source line and the ground line when the main luminescent device is able to light up.
- At least one of the first electrode and the second electrode is electrically isolated from both the source line and the ground line
- the third electrode is electrically connected to the source line and the fourth electrode is electrically connected to the ground line when the main luminescent device is unable to light up.
- the present invention further provides a micro lighting device including a source line, a ground line, a main luminescent device having a first electrode and a second electrode, a redundant luminescent device having a third electrode and a fourth electrode, and a conductive material.
- the first electrode is electrically connected to the source line and the second electrode is electrically connected to the ground line when the main luminescent device is able to light up.
- Both the first electrode and the second electrode are electrically isolated from both the source line and the ground line when the main luminescent device is unable to light up.
- the redundant luminescent device is arranged to be disposed on the main luminescent device when the main luminescent device is unable to light up and the conductive material is used for electrically connecting the third electrode to the source line and for electrically connecting the fourth electrode to the ground line.
- the present invention further provides a method of manufacturing and repairing micro lighting device.
- the method includes fabricating a main luminescent device which includes a first electrode and a second electrode and then transferring the main luminescent device to be disposed on a substrate, fabricating a redundant luminescent device which includes a third electrode and a fourth electrode and then transferring the redundant luminescent device to be disposed on the substrate, electrically connecting the first electrode to a source line, electrically connecting the second electrode to a ground line, and electrically isolating at least one of the third electrode and the fourth electrode from both the source line and the ground line when the main luminescent device is able to light up, and electrically isolating at least one of the first electrode and the second electrode from both the source line and the ground line, electrically connecting the third electrode to the source line, and electrically connecting the fourth electrode to the ground line when the main luminescent device is unable to light up.
- the present invention further provides a method of manufacturing and repairing micro lighting device.
- the method includes fabricating a main luminescent device which includes a first electrode and a second electrode, fabricating a redundant luminescent device which includes a third electrode and a fourth electrode, transferring the main luminescent device to be disposed on a substrate, electrically connecting the first electrode to a source line and electrically connecting the second electrode to a ground line when the main luminescent device is able to light up, electrically isolating at least one of the first electrode and the second electrode from both the source line and the ground line when the main luminescent device is able to light up, disposing the redundant luminescent device on the main luminescent device, and disposing a conductive material for electrically connecting the third electrode to the source line and for electrically connecting the fourth electrode to the ground line.
- FIG. 1A is a structural diagram illustrating a micro lighting device according to an embodiment of the present invention.
- FIG. 1B is a diagram illustrating a method of repairing the micro lighting device according to an embodiment of the present invention.
- FIG. 2A is a structural diagram illustrating a micro lighting device according to another embodiment of the present invention.
- FIG. 2B is a diagram illustrating a method of repairing a micro lighting device according to another embodiment of the present invention.
- FIG. 3A is a structural diagram illustrating a micro lighting device according to another embodiment of the present invention.
- FIGS. 3B-3D are diagrams illustrating a method of repairing a micro lighting device according to another embodiment of the present invention.
- FIG. 1A is a structural diagram illustrating a micro lighting device 100 according to an embodiment of the present invention.
- a cross-sectional diagram of the micro lighting device 100 is depicted on the left side of FIG. 1A
- a top-view diagram of the micro lighting device 100 is depicted on the right side of FIG. 1A .
- the micro lighting device 100 with a thin-film, miniaturized and array design includes a plurality of main luminescent devices (only one main luminescent device 10 is depicted for illustrative purpose), at least one redundant luminescent device 20 , a source line 30 , and a ground line 40 .
- the main luminescent device 10 and the redundant luminescent device 20 are fabricated by combining P-type and N-type semiconductor materials before being mass transferred to a substrate 50 .
- a positive voltage is applied to a P-electrode and a negative voltage is applied to an N-electrode
- electrons flow from the N-region towards the P-region and holes flow from the P-region towards the N-region due to the forward-bias voltage.
- These electrons and holes then combine in the PN junction of the luminescent layer, thereby emitting photons of light.
- the main luminescent device 10 and the redundant luminescent device 20 may be micro LED devices.
- the main luminescent device 10 includes a P-type semiconductor layer 12 , an N-type semiconductor layer 14 , a P-electrode 16 , an n-electrode 18 , and a luminescent layer 15 , wherein the P-electrode 16 is electrically connected to the source line 30 and the N-electrode 18 is electrically connected to the ground line 40 .
- the redundant luminescent device 20 includes a P-type semiconductor layer 22 , an N-type semiconductor layer 24 , a P-electrode 26 , an n-electrode 28 , and a luminescent layer 25 , wherein the P-electrode 26 is electrically connected to the source line 30 but the N-electrode 18 is electrically isolated from the ground line 40 .
- FIG. 1B is a diagram illustrating a method of repairing the micro lighting device 100 according to an embodiment of the present invention.
- a cross-sectional diagram of the repaired micro lighting device 100 is depicted on the left side of FIG. 1B
- a top-view diagram of the repaired micro lighting device 100 is depicted on the right side of FIG. 1B , wherein the repair locations are designated by flash signs.
- the main luminescent device 10 in FIG. 1A somehow malfunctions and is unable to light up when applying voltages to the P-electrode 16 and the N-electrode 18
- the normal redundant luminescent device 20 is unable to light up because no voltage can be applied to the N-electrode 28 .
- the electrical connection between the P-electrode 16 of the main luminescent device 10 and the source line 30 may be cut off using laser cutting technique so as to prevent leakage current from the flawed main luminescent device 10 .
- the electrical connection between the N-electrode 28 of the redundant luminescent device 20 and the ground line 40 may be established using laser repair technique so that the normal redundant luminescent device 20 may light up to replace the flawed main luminescent device 10 .
- FIG. 2A is a structural diagram illustrating a micro lighting device 200 according to another embodiment of the present invention.
- a cross-sectional diagram of the micro lighting device 200 is depicted on the left side of FIG. 2A
- a top-view diagram of the micro lighting device 200 is depicted on the right side of FIG. 2A .
- the micro lighting device 200 with a thin-film, miniaturized and array design includes a plurality of main luminescent devices (only one main luminescent device 10 is depicted for illustrative purpose), at least one redundant luminescent device 20 , a source line 30 , and a ground line 40 .
- the main luminescent device 10 and the redundant luminescent device 20 are fabricated by combining P-type and N-type semiconductor materials before being mass transferred to a substrate 50 .
- a positive voltage is applied to a P-electrode and a negative voltage is applied to an N-electrode
- electrons flow from the N-region towards the P-region and holes flow from the P-region towards the N-region due to the forward-bias voltage.
- These electrons and holes then combine in the PN junction of the luminescent layer, thereby emitting photons of light.
- the main luminescent device 10 and the redundant luminescent device 20 may be micro LED devices.
- the main luminescent device 10 includes a P-type semiconductor layer 12 , an N-type semiconductor layer 14 , a P-electrode 16 , an n-electrode 18 , and a luminescent layer 15 , wherein the P-electrode 16 is electrically connected to the source line 30 and the N-electrode 18 is electrically connected to the ground line 40 .
- the redundant luminescent device 20 includes a P-type semiconductor layer 22 , an N-type semiconductor layer 24 , a P-electrode 26 , an n-electrode 28 , and a luminescent layer 25 , wherein the N-electrode 18 is electrically connected to the ground line 40 but the P-electrode 26 is electrically isolated from the source line 30 .
- FIG. 2B is a diagram illustrating a method of repairing the micro lighting device 200 according to an embodiment of the present invention.
- a cross-sectional diagram of the repaired micro lighting device 200 is depicted on the left side of FIG. 2B
- a top-view diagram of the repaired micro lighting device 200 is depicted on the right side of FIG. 2B , wherein the repair locations are designated by flash signs.
- the main luminescent device 10 in FIG. 2A somehow malfunctions and is unable to light up when applying voltages to the P-electrode 16 and the N-electrode 18
- the normal redundant luminescent device 20 is unable to light up because no voltage can be applied to the P-electrode 26 .
- the electrical connection between the N-electrode 18 of the main luminescent device 10 and the ground line 40 may be cut off using laser cutting technique so as to prevent leakage current from the flawed main luminescent device 10 .
- the electrical connection between the P-electrode 26 of the redundant luminescent device 20 and the source line 30 may be established using laser repair technique so that the normal redundant luminescent device 20 may light up to replace the flawed main luminescent device 10 .
- FIG. 3A is a structural diagram illustrating a micro lighting device 300 according to another embodiment of the present invention.
- a cross-sectional diagram of the micro lighting device 300 is depicted on the left side of FIG. 3A
- a top-view diagram of the micro lighting device 300 is depicted on the right side of FIG. 3A .
- the micro lighting device 300 with a thin-film, miniaturized and array design includes a plurality of main luminescent devices (only two main luminescent devices 11 and 12 are depicted for illustrative purpose), a source line 30 , and a ground line 40 .
- the main luminescent devices 11 and 12 are fabricated by combining P-type and N-type semiconductor materials before being mass transferred to a substrate 50 .
- a positive voltage is applied to a P-electrode and a negative voltage is applied to an N-electrode
- electrons flow from the N-region towards the P-region and holes flow from the P-region towards the N-region due to the forward-bias voltage.
- These electrons and holes then combine in the PN junction of the luminescent layer, thereby emitting photons of light.
- the main luminescent devices 11 and 12 may be micro LED devices each including a P-type semiconductor layer 12 , an N-type semiconductor layer 14 , a P-electrode 16 , an n-electrode 18 , and a luminescent layer 15 , wherein the P-electrode 16 is electrically connected to the source line 30 and the N-electrode 18 is electrically connected to the ground line 40 .
- FIGS. 3B-3D are diagrams illustrating a method of repairing the micro lighting device 300 according to an embodiment of the present invention.
- a cross-sectional diagram of the repaired micro lighting device 300 is depicted on the left side of FIGS. 3B-3D
- a top-view diagram of the repaired micro lighting device 300 is depicted on the right side of FIGS. 3B-3D , wherein the repair locations are designated by flash signs.
- the electrical connection between the P-electrode 16 of the main luminescent device 11 and the source line 30 and the electrical connection between the N-electrode 18 of the main luminescent device 11 and the ground line 40 may be cut off using laser cutting technique so as to prevent leakage current from the flawed main luminescent device 11 .
- a redundant luminescent device 20 may be fabricated by combining P-type and N-type semiconductor materials before being transferred to be displaced on the main luminescent device 11 .
- the redundant luminescent device 20 includes a P-type semiconductor layer 22 , an N-type semiconductor layer 24 , a P-electrode 26 , an n-electrode 28 , and a luminescent layer 25 .
- conductive material 35 may be deposited on the redundant luminescent device 20 so that the P-electrode 26 and the n-electrode 28 may be electrically connected to the source line 30 and the ground line 40 , respectively. Therefore, the normal redundant luminescent device 20 may light up to replace the flawed main luminescent device 11 .
- the conductive material 35 may be tantalum, molybdenum or tungsten metal which may be welded to the electrodes of the redundant luminescent device 20 in a laser metal transfer (LMT) process.
- the conductive material 35 may be Ni(CO)4, Fe(CO)5, Cr(CO)6, Mo(CO)6, or W(CO)6 metal compounds which may be deposited on the electrodes of the redundant luminescent device 20 in a laser chemical vapor deposition (LCVD) process.
- LMT laser metal transfer
- the conductive material 35 may be Ni(CO)4, Fe(CO)5, Cr(CO)6, Mo(CO)6, or W(CO)6 metal compounds which may be deposited on the electrodes of the redundant luminescent device 20 in a laser chemical vapor deposition (LCVD) process.
- LMT laser metal transfer
- the conductive material 35 may be Ni(CO)4, Fe(CO)5, Cr(CO)6, Mo(CO)6, or W(CO)6 metal compounds which may be deposited on the electrodes of the redundant lumi
- the present invention provides a micro lighting device with repair mechanism.
- the present micro lighting device can also improve manufacturing yield using the repair mechanism.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electroluminescent Light Sources (AREA)
- Led Devices (AREA)
Abstract
A micro lighting device includes a source line, a ground line, a main LED, and a redundant LED. The main LED includes a first electrode and a second electrode, and the redundant LED includes a third electrode and a fourth electrode. When the main LED is able to light up, the first electrode is electrically connected to the source line, the second electrode is electrically connected to the ground line, and at least one of the third electrode and the fourth electrode is electrically isolated from both the source line and the ground line. When the main LED is unable to light up, at least one of the first electrode and the second electrode is electrically isolated from both the source line and the ground line, the third electrode is electrically connected to the source line, and the fourth electrode is electrically connected to the ground line.
Description
- This application claims priority of Taiwan Application No. 106142619 filed on 2017 Dec. 5.
- The present invention is related to a micro lighting device, and more particularly, to a micro lighting device with repair mechanism.
- Compared to traditional incandescent bulbs, light-emitting diodes (LEDs) are advantageous in low power consumption, long lifetime, small size, no warm-up time, fast reaction speed, and the ability to be manufactured as small or array devices. In addition to outdoor displays, traffic signs, and liquid crystal display (LCD) backlight for various electronic devices such as mobile phones, notebook computers or personal digital assistants (PDAs), LEDs are also widely used as indoor/outdoor lighting devices in place of fluorescent of incandescent lamps.
- The size of traditional LED arrays is the dimension of millimeters (mm). The size of micro LED arrays may be reduced to the dimension of micrometers (μm) while inheriting the same good performances regarding power consumption, brightness, resolution, color saturation, reaction speed, life time and efficiency. In a micro LED manufacturing process, a thin-film, miniaturized and array design is adopted so that multiple micro LEDs are fabricated in the dimension of merely 1-10 μm. Next, these micro LEDs are mass transferred to be disposed on another circuit board. Protection layers and upper electrodes may be formed in a physical deposition process before packaging the upper substrate. Since the manufacturing process of micro LEDs is very complicated, there is a need to improve manufacturing yield.
- The present invention provides a micro lighting device including a source line, a ground line, a main luminescent device having a first electrode and a second electrode, and a redundant luminescent device having a third electrode and a fourth electrode. The first electrode is electrically connected to the source line and the second electrode is electrically connected to the ground line and at least one of the third electrode and the fourth electrode is electrically isolated from both the source line and the ground line when the main luminescent device is able to light up. At least one of the first electrode and the second electrode is electrically isolated from both the source line and the ground line, the third electrode is electrically connected to the source line and the fourth electrode is electrically connected to the ground line when the main luminescent device is unable to light up.
- The present invention further provides a micro lighting device including a source line, a ground line, a main luminescent device having a first electrode and a second electrode, a redundant luminescent device having a third electrode and a fourth electrode, and a conductive material. The first electrode is electrically connected to the source line and the second electrode is electrically connected to the ground line when the main luminescent device is able to light up. Both the first electrode and the second electrode are electrically isolated from both the source line and the ground line when the main luminescent device is unable to light up. The redundant luminescent device is arranged to be disposed on the main luminescent device when the main luminescent device is unable to light up and the conductive material is used for electrically connecting the third electrode to the source line and for electrically connecting the fourth electrode to the ground line.
- The present invention further provides a method of manufacturing and repairing micro lighting device. The method includes fabricating a main luminescent device which includes a first electrode and a second electrode and then transferring the main luminescent device to be disposed on a substrate, fabricating a redundant luminescent device which includes a third electrode and a fourth electrode and then transferring the redundant luminescent device to be disposed on the substrate, electrically connecting the first electrode to a source line, electrically connecting the second electrode to a ground line, and electrically isolating at least one of the third electrode and the fourth electrode from both the source line and the ground line when the main luminescent device is able to light up, and electrically isolating at least one of the first electrode and the second electrode from both the source line and the ground line, electrically connecting the third electrode to the source line, and electrically connecting the fourth electrode to the ground line when the main luminescent device is unable to light up.
- The present invention further provides a method of manufacturing and repairing micro lighting device. The method includes fabricating a main luminescent device which includes a first electrode and a second electrode, fabricating a redundant luminescent device which includes a third electrode and a fourth electrode, transferring the main luminescent device to be disposed on a substrate, electrically connecting the first electrode to a source line and electrically connecting the second electrode to a ground line when the main luminescent device is able to light up, electrically isolating at least one of the first electrode and the second electrode from both the source line and the ground line when the main luminescent device is able to light up, disposing the redundant luminescent device on the main luminescent device, and disposing a conductive material for electrically connecting the third electrode to the source line and for electrically connecting the fourth electrode to the ground line.
- These and other objectives of the present invention will no doubt become obvious to those of ordinary skill in the art after reading the following detailed description of the preferred embodiment that is illustrated in the various figures and drawings.
-
FIG. 1A is a structural diagram illustrating a micro lighting device according to an embodiment of the present invention. -
FIG. 1B is a diagram illustrating a method of repairing the micro lighting device according to an embodiment of the present invention. -
FIG. 2A is a structural diagram illustrating a micro lighting device according to another embodiment of the present invention. -
FIG. 2B is a diagram illustrating a method of repairing a micro lighting device according to another embodiment of the present invention. -
FIG. 3A is a structural diagram illustrating a micro lighting device according to another embodiment of the present invention. -
FIGS. 3B-3D are diagrams illustrating a method of repairing a micro lighting device according to another embodiment of the present invention. -
FIG. 1A is a structural diagram illustrating amicro lighting device 100 according to an embodiment of the present invention. A cross-sectional diagram of themicro lighting device 100 is depicted on the left side ofFIG. 1A , and a top-view diagram of themicro lighting device 100 is depicted on the right side ofFIG. 1A . Themicro lighting device 100 with a thin-film, miniaturized and array design includes a plurality of main luminescent devices (only one mainluminescent device 10 is depicted for illustrative purpose), at least one redundantluminescent device 20, asource line 30, and aground line 40. - The main
luminescent device 10 and the redundantluminescent device 20 are fabricated by combining P-type and N-type semiconductor materials before being mass transferred to asubstrate 50. Under normal condition, when a positive voltage is applied to a P-electrode and a negative voltage is applied to an N-electrode, electrons flow from the N-region towards the P-region and holes flow from the P-region towards the N-region due to the forward-bias voltage. These electrons and holes then combine in the PN junction of the luminescent layer, thereby emitting photons of light. In an embodiment of the present invention, the mainluminescent device 10 and the redundantluminescent device 20 may be micro LED devices. The mainluminescent device 10 includes a P-type semiconductor layer 12, an N-type semiconductor layer 14, a P-electrode 16, an n-electrode 18, and aluminescent layer 15, wherein the P-electrode 16 is electrically connected to thesource line 30 and the N-electrode 18 is electrically connected to theground line 40. The redundantluminescent device 20 includes a P-type semiconductor layer 22, an N-type semiconductor layer 24, a P-electrode 26, an n-electrode 28, and aluminescent layer 25, wherein the P-electrode 26 is electrically connected to thesource line 30 but the N-electrode 18 is electrically isolated from theground line 40. -
FIG. 1B is a diagram illustrating a method of repairing themicro lighting device 100 according to an embodiment of the present invention. A cross-sectional diagram of the repairedmicro lighting device 100 is depicted on the left side ofFIG. 1B , and a top-view diagram of the repairedmicro lighting device 100 is depicted on the right side ofFIG. 1B , wherein the repair locations are designated by flash signs. For illustrative purpose, it is assumed that the mainluminescent device 10 inFIG. 1A somehow malfunctions and is unable to light up when applying voltages to the P-electrode 16 and the N-electrode 18, while the normal redundantluminescent device 20 is unable to light up because no voltage can be applied to the N-electrode 28. As depicted inFIG. 1B , the electrical connection between the P-electrode 16 of the mainluminescent device 10 and thesource line 30 may be cut off using laser cutting technique so as to prevent leakage current from the flawed mainluminescent device 10. Next, the electrical connection between the N-electrode 28 of the redundantluminescent device 20 and theground line 40 may be established using laser repair technique so that the normal redundantluminescent device 20 may light up to replace the flawed mainluminescent device 10. -
FIG. 2A is a structural diagram illustrating amicro lighting device 200 according to another embodiment of the present invention. A cross-sectional diagram of themicro lighting device 200 is depicted on the left side ofFIG. 2A , and a top-view diagram of themicro lighting device 200 is depicted on the right side ofFIG. 2A . Themicro lighting device 200 with a thin-film, miniaturized and array design includes a plurality of main luminescent devices (only one mainluminescent device 10 is depicted for illustrative purpose), at least one redundantluminescent device 20, asource line 30, and aground line 40. - The main
luminescent device 10 and the redundantluminescent device 20 are fabricated by combining P-type and N-type semiconductor materials before being mass transferred to asubstrate 50. Under normal condition, when a positive voltage is applied to a P-electrode and a negative voltage is applied to an N-electrode, electrons flow from the N-region towards the P-region and holes flow from the P-region towards the N-region due to the forward-bias voltage. These electrons and holes then combine in the PN junction of the luminescent layer, thereby emitting photons of light. In an embodiment of the present invention, the mainluminescent device 10 and the redundantluminescent device 20 may be micro LED devices. The mainluminescent device 10 includes a P-type semiconductor layer 12, an N-type semiconductor layer 14, a P-electrode 16, an n-electrode 18, and aluminescent layer 15, wherein the P-electrode 16 is electrically connected to thesource line 30 and the N-electrode 18 is electrically connected to theground line 40. The redundantluminescent device 20 includes a P-type semiconductor layer 22, an N-type semiconductor layer 24, a P-electrode 26, an n-electrode 28, and aluminescent layer 25, wherein the N-electrode 18 is electrically connected to theground line 40 but the P-electrode 26 is electrically isolated from thesource line 30. -
FIG. 2B is a diagram illustrating a method of repairing themicro lighting device 200 according to an embodiment of the present invention. A cross-sectional diagram of the repairedmicro lighting device 200 is depicted on the left side ofFIG. 2B , and a top-view diagram of the repairedmicro lighting device 200 is depicted on the right side ofFIG. 2B , wherein the repair locations are designated by flash signs. For illustrative purpose, it is assumed that the mainluminescent device 10 inFIG. 2A somehow malfunctions and is unable to light up when applying voltages to the P-electrode 16 and the N-electrode 18, while the normal redundantluminescent device 20 is unable to light up because no voltage can be applied to the P-electrode 26. As depicted inFIG. 2B , the electrical connection between the N-electrode 18 of the mainluminescent device 10 and theground line 40 may be cut off using laser cutting technique so as to prevent leakage current from the flawed mainluminescent device 10. Next, the electrical connection between the P-electrode 26 of the redundantluminescent device 20 and thesource line 30 may be established using laser repair technique so that the normal redundantluminescent device 20 may light up to replace the flawed mainluminescent device 10. -
FIG. 3A is a structural diagram illustrating amicro lighting device 300 according to another embodiment of the present invention. A cross-sectional diagram of themicro lighting device 300 is depicted on the left side ofFIG. 3A , and a top-view diagram of themicro lighting device 300 is depicted on the right side ofFIG. 3A . Themicro lighting device 300 with a thin-film, miniaturized and array design includes a plurality of main luminescent devices (only two mainluminescent devices source line 30, and aground line 40. - The main
luminescent devices substrate 50. Under normal condition, when a positive voltage is applied to a P-electrode and a negative voltage is applied to an N-electrode, electrons flow from the N-region towards the P-region and holes flow from the P-region towards the N-region due to the forward-bias voltage. These electrons and holes then combine in the PN junction of the luminescent layer, thereby emitting photons of light. In an embodiment of the present invention, the mainluminescent devices type semiconductor layer 12, an N-type semiconductor layer 14, a P-electrode 16, an n-electrode 18, and aluminescent layer 15, wherein the P-electrode 16 is electrically connected to thesource line 30 and the N-electrode 18 is electrically connected to theground line 40. -
FIGS. 3B-3D are diagrams illustrating a method of repairing themicro lighting device 300 according to an embodiment of the present invention. A cross-sectional diagram of the repairedmicro lighting device 300 is depicted on the left side ofFIGS. 3B-3D , and a top-view diagram of the repairedmicro lighting device 300 is depicted on the right side ofFIGS. 3B-3D , wherein the repair locations are designated by flash signs. For illustrative purpose, it is assumed that the mainluminescent device 11 inFIG. 3A somehow malfunctions and is unable to light up when applying voltages to its P-electrode 16 and its N-electrode 18, while the normal mainluminescent device 12 is able to light up when applying voltages to its P-electrode 16 and its N-electrode 18. As depicted inFIG. 3B , the electrical connection between the P-electrode 16 of the mainluminescent device 11 and thesource line 30 and the electrical connection between the N-electrode 18 of the mainluminescent device 11 and theground line 40 may be cut off using laser cutting technique so as to prevent leakage current from the flawed mainluminescent device 11. Next as depicted inFIG. 3C , a redundantluminescent device 20 may be fabricated by combining P-type and N-type semiconductor materials before being transferred to be displaced on the mainluminescent device 11. The redundantluminescent device 20 includes a P-type semiconductor layer 22, an N-type semiconductor layer 24, a P-electrode 26, an n-electrode 28, and aluminescent layer 25. Next as depicted inFIG. 3D ,conductive material 35 may be deposited on the redundantluminescent device 20 so that the P-electrode 26 and the n-electrode 28 may be electrically connected to thesource line 30 and theground line 40, respectively. Therefore, the normal redundantluminescent device 20 may light up to replace the flawed mainluminescent device 11. - In an embodiment of the present invention, the
conductive material 35 may be tantalum, molybdenum or tungsten metal which may be welded to the electrodes of the redundantluminescent device 20 in a laser metal transfer (LMT) process. In another embodiment of the present invention, theconductive material 35 may be Ni(CO)4, Fe(CO)5, Cr(CO)6, Mo(CO)6, or W(CO)6 metal compounds which may be deposited on the electrodes of the redundantluminescent device 20 in a laser chemical vapor deposition (LCVD) process. However, the type of theconductive material 35 does not limit the scope of the present invention. - In conclusion, the present invention provides a micro lighting device with repair mechanism. In addition to good performances regarding power consumption, brightness, resolution, color saturation, reaction speed, life time and efficiency, the present micro lighting device can also improve manufacturing yield using the repair mechanism.
- Those skilled in the art will readily observe that numerous modifications and alterations of the device and method may be made while retaining the teachings of the invention. Accordingly, the above disclosure should be construed as limited only by the metes and bounds of the appended claims.
Claims (10)
1. A micro lighting device, comprising:
a source line;
a ground line;
a main luminescent device comprising a first electrode and a second electrode, wherein:
the first electrode is electrically connected to the source line and the second electrode is electrically connected to the ground line when the main luminescent device is able to light up;
at least one of the first electrode and the second electrode is electrically isolated from both the source line and the ground line when the main luminescent device is unable to light up; and
a redundant luminescent device comprising a third electrode and a fourth electrode, wherein:
at least one of the third electrode and the fourth electrode is electrically isolated from both the source line and the ground line when the main luminescent device is able to light up; and
the third electrode is electrically connected to the source line and the fourth electrode is electrically connected to the ground line when the main luminescent device is unable to light up.
2. The micro lighting device of claim 1 , wherein:
the main luminescent device further comprises:
a first semiconductor layer of a first doping type, wherein the first electrode is disposed on the first semiconductor layer;
a first luminescent layer disposed on the first semiconductor layer; and
a second semiconductor layer of a second doping type disposed on the first luminescent layer, wherein the second electrode is disposed on the second semiconductor layer;
the redundant luminescent device further comprises:
a third semiconductor layer of the first doping type, wherein the third electrode is disposed on the third semiconductor layer;
a second luminescent layer disposed on the third semiconductor layer; and
a fourth semiconductor layer of the second doping type disposed on the second luminescent layer, wherein the fourth electrode is disposed on the fourth semiconductor layer; and
the main luminescent device and the redundant luminescent device are fabricated and then transferred to be disposed on a substrate.
3. The micro lighting device of claim 1 , wherein the main luminescent device and the redundant luminescent device are micro light emitting diodes (LEDs).
4. A micro lighting device, comprising:
a source line;
a ground line;
a main luminescent device comprising a first electrode and a second electrode, wherein:
the first electrode is electrically connected to the source line and the second electrode is electrically connected to the ground line when the main luminescent device is able to light up;
both the first electrode and the second electrode are electrically isolated from both the source line and the ground line when the main luminescent device is unable to light up;
a redundant luminescent device comprising a third electrode and a fourth electrode and arranged to be disposed on the main luminescent device when the main luminescent device is unable to light up; and
a conductive material for electrically connecting the third electrode to the source line and for electrically connecting the fourth electrode to the ground line.
5. The micro lighting device of claim 4 , wherein:
the main luminescent device further comprises:
a first semiconductor layer of a first doping type, wherein the first electrode is disposed on the first semiconductor layer;
a first luminescent layer disposed on the first semiconductor layer; and
a second semiconductor layer of a second doping type disposed on the first luminescent layer, wherein the second electrode is disposed on the second semiconductor layer;
the redundant luminescent device further comprises:
a third semiconductor layer of the first doping type, wherein the third electrode is disposed on the third semiconductor layer;
a second luminescent layer disposed on the third semiconductor layer; and
a fourth semiconductor layer of the second doping type disposed on the second luminescent layer, wherein the fourth electrode is disposed on the fourth semiconductor layer;
the main luminescent device is fabricated and then transferred to be disposed on a substrate; and
the redundant luminescent device is fabricated and then transferred to be disposed on the main luminescent device.
6. The micro lighting device of claim 4 , wherein the main luminescent device and the redundant luminescent device are micro LEDs.
7. A method of manufacturing and repairing micro lighting device, comprising:
fabricating a main luminescent device which includes a first electrode and a second electrode and then transferring the main luminescent device to be disposed on a substrate;
fabricating a redundant luminescent device which includes a third electrode and a fourth electrode and then transferring the redundant luminescent device to be disposed on the substrate;
electrically connecting the first electrode to a source line, electrically connecting the second electrode to a ground line, and electrically isolating at least one of the third electrode and the fourth electrode from both the source line and the ground line when the main luminescent device is able to light up; and
electrically isolating at least one of the first electrode and the second electrode from both the source line and the ground line, electrically connecting the third electrode to the source line, and electrically connecting the fourth electrode to the ground line when the main luminescent device is unable to light up.
8. The method of claim 7 , wherein:
fabricating the main luminescent device comprises:
disposing a first luminescent layer and the first electrode on a first semiconductor layer of a first doping type;
disposing a second semiconductor layer of a second doping type on the first luminescent layer; and
disposing the second electrode on the second semiconductor layer; and
fabricating the redundant luminescent device comprises:
disposing a second luminescent layer and the third electrode on a third semiconductor layer of the first doping type;
disposing a fourth semiconductor layer of the second doping type on the second luminescent layer; and
disposing the fourth electrode on the fourth semiconductor layer.
9. A method of manufacturing and repairing micro lighting device, comprising:
fabricating a main luminescent device which includes a first electrode and a second electrode;
fabricating a redundant luminescent device which includes a third electrode and a fourth electrode;
transferring the main luminescent device to be disposed on a substrate;
electrically connecting the first electrode to a source line and electrically connecting the second electrode to a ground line when the main luminescent device is able to light up;
electrically isolating at least one of the first electrode and the second electrode from both the source line and the ground line when the main luminescent device is able to light up;
disposing the redundant luminescent device on the main luminescent device; and
disposing a conductive material for electrically connecting the third electrode to the source line and for electrically connecting the fourth electrode to the ground line.
10. The method of claim 9 , wherein:
fabricating the main luminescent device comprises:
disposing a first luminescent layer and the first electrode on a first semiconductor layer of a first doping type;
disposing a second semiconductor layer of a second doping type on the first luminescent layer; and
disposing the second electrode on the second semiconductor layer; and
fabricating the redundant luminescent device comprises:
disposing a second luminescent layer and the third electrode on a third semiconductor layer of the first doping type;
disposing a fourth semiconductor layer of the second doping type on the second luminescent layer; and
disposing the fourth electrode on the fourth semiconductor layer.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW106142619A | 2017-12-05 | ||
TW106142619 | 2017-12-05 | ||
TW106142619A TWI653751B (en) | 2017-12-05 | 2017-12-05 | Miniaturized light-emitting device with repair structure and related manufacturing and repairing methods |
Publications (2)
Publication Number | Publication Date |
---|---|
US10312165B1 US10312165B1 (en) | 2019-06-04 |
US20190172760A1 true US20190172760A1 (en) | 2019-06-06 |
Family
ID=66590642
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/881,799 Active US10312165B1 (en) | 2017-12-05 | 2018-01-28 | Micro lighting device |
Country Status (2)
Country | Link |
---|---|
US (1) | US10312165B1 (en) |
TW (1) | TWI653751B (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11380658B2 (en) * | 2020-05-04 | 2022-07-05 | Acer Incorporated | Display device and manufacturing method thereof |
JP7440705B2 (en) | 2020-11-03 | 2024-02-28 | 成都辰顯光電有限公司 | Drive backplane, display panel and manufacturing method thereof |
EP4376087A1 (en) * | 2022-11-24 | 2024-05-29 | LG Display Co., Ltd. | Light emitting device and display apparatus comprising the same |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI641126B (en) * | 2017-12-04 | 2018-11-11 | 友達光電股份有限公司 | Pixel structure |
CN113497072B (en) * | 2020-03-18 | 2022-12-09 | 重庆康佳光电技术研究院有限公司 | LED display convenient to repair and repair method thereof |
TWI751900B (en) | 2021-01-29 | 2022-01-01 | 錼創顯示科技股份有限公司 | Selectable-repairing micro light emitting diode display and repairing method thereof |
US20230086380A1 (en) * | 2021-09-22 | 2023-03-23 | Apple Inc. | Tandem Micro-Light Emitting Diode Redundancy Architecture |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102252226B (en) * | 2011-04-14 | 2013-01-09 | 深圳市华星光电技术有限公司 | Light-emitting diode (LED) component and LED light string adopting same |
US8987765B2 (en) * | 2013-06-17 | 2015-03-24 | LuxVue Technology Corporation | Reflective bank structure and method for integrating a light emitting device |
US9768345B2 (en) * | 2013-12-20 | 2017-09-19 | Apple Inc. | LED with current injection confinement trench |
FR3023061B1 (en) * | 2014-06-27 | 2017-12-15 | Commissariat Energie Atomique | MESA STRUCTURE DIODE WITH SUBSTANTIALLY PLANE CONTACT SURFACE |
CN106716641B (en) * | 2014-10-17 | 2021-07-09 | 英特尔公司 | Miniature LED display and assembly |
US9478583B2 (en) * | 2014-12-08 | 2016-10-25 | Apple Inc. | Wearable display having an array of LEDs on a conformable silicon substrate |
WO2017123658A1 (en) * | 2016-01-12 | 2017-07-20 | Sxaymiq Technologies Llc | Light emitting diode display |
US10917953B2 (en) * | 2016-03-21 | 2021-02-09 | X Display Company Technology Limited | Electrically parallel fused LEDs |
TWI607559B (en) * | 2017-01-10 | 2017-12-01 | 錼創科技股份有限公司 | Display panel |
-
2017
- 2017-12-05 TW TW106142619A patent/TWI653751B/en active
-
2018
- 2018-01-28 US US15/881,799 patent/US10312165B1/en active Active
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11380658B2 (en) * | 2020-05-04 | 2022-07-05 | Acer Incorporated | Display device and manufacturing method thereof |
US20220230998A1 (en) * | 2020-05-04 | 2022-07-21 | Acer Incorporated | Display device |
US11837584B2 (en) * | 2020-05-04 | 2023-12-05 | Acer Incorporated | Display device |
JP7440705B2 (en) | 2020-11-03 | 2024-02-28 | 成都辰顯光電有限公司 | Drive backplane, display panel and manufacturing method thereof |
EP4376087A1 (en) * | 2022-11-24 | 2024-05-29 | LG Display Co., Ltd. | Light emitting device and display apparatus comprising the same |
Also Published As
Publication number | Publication date |
---|---|
US10312165B1 (en) | 2019-06-04 |
TW201926669A (en) | 2019-07-01 |
TWI653751B (en) | 2019-03-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10312165B1 (en) | Micro lighting device | |
CN109216329B (en) | Miniature LED display panel and preparation method thereof | |
KR101256441B1 (en) | Light Emitting diode | |
EP2743909B1 (en) | Pixel structure, pixel unit structure, display panel and display apparatus | |
US20220415977A1 (en) | Display apparatus using light-emitting device | |
US20240088324A1 (en) | Display device, substrate for display device and method for repairing display device | |
US10362651B2 (en) | Micro lighting device | |
US9166187B2 (en) | Organic light emitting device and power supply device thereof | |
US11387387B2 (en) | Micro light emitting device display apparatus | |
US10505070B2 (en) | Micro device transfer equipment and related method | |
JP2014146809A (en) | Light-emitting element | |
US20190170808A1 (en) | Testing system for micro lighting device and related testing method | |
CN100499156C (en) | Organic electroluminescent display panel | |
CN217719638U (en) | Micro LED chip | |
CN110491974B (en) | Micro light-emitting element and micro light-emitting diode element substrate | |
CN109473536B (en) | Light emitting diode display and method of manufacturing the same | |
CN109904150B (en) | Miniaturized light-emitting device | |
CN102800815A (en) | Display device and manufacturing method thereof | |
CN114078897A (en) | Light-emitting device, preparation method thereof, display panel, backlight module and display device | |
CN107610604B (en) | LED chip, array substrate, display panel and display device | |
US10665764B2 (en) | Micro lighting device | |
US20230317704A1 (en) | Display panel and display device | |
KR102601054B1 (en) | Micro led assembly | |
CN102867819B (en) | Package structure for LED and manufacture method thereof | |
CN115548196A (en) | Display device and manufacturing method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
FEPP | Fee payment procedure |
Free format text: ENTITY STATUS SET TO UNDISCOUNTED (ORIGINAL EVENT CODE: BIG.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
MAFP | Maintenance fee payment |
Free format text: PAYMENT OF MAINTENANCE FEE, 4TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1551); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY Year of fee payment: 4 |