CN114078897A - Light-emitting device, preparation method thereof, display panel, backlight module and display device - Google Patents
Light-emitting device, preparation method thereof, display panel, backlight module and display device Download PDFInfo
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- CN114078897A CN114078897A CN202010836976.8A CN202010836976A CN114078897A CN 114078897 A CN114078897 A CN 114078897A CN 202010836976 A CN202010836976 A CN 202010836976A CN 114078897 A CN114078897 A CN 114078897A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Abstract
The invention provides a light emitting device, which relates to the technical field of display, wherein the light emitting device comprises: the light emitting diode comprises a substrate, and a first electrode, a second electrode and a plurality of light emitting diodes which are arranged on the substrate; the plurality of light emitting diodes are connected in series between the first electrode and the second electrode, and the plurality of light emitting diodes are arranged in a thickness direction of the substrate. The invention also provides a preparation method of the light-emitting device, a display panel, a backlight module and a display device. The light emitting diode has larger light emitting area and high light emitting efficiency.
Description
Technical Field
The invention relates to the technical field of display, in particular to a light-emitting device, a display panel, a backlight module and a display device.
Background
The Mini LED gradually becomes a key research direction in the next generation of display technology due to its advantages of high brightness, high contrast, fast response, low power consumption, etc., and the performance of the Mini LED chip is significantly improved when it is used as a light emitting element.
The Mini LED high-voltage chip is a chip formed by connecting at least two diodes in series, the voltage threshold value is high, the working current is small, the Mini LED high-voltage chip can effectively improve the luminous brightness when being applied to the backlight module, and can effectively reduce the driving current when being applied to the display panel, so that the power consumption is saved.
However, the diodes in the conventional Mini LED high-voltage chip are generally arranged in the horizontal direction, and the plurality of diodes are connected by the bridge portion, but the area of each diode is reduced by the bridge portion, which further affects the light emitting efficiency of the Mini LED high-voltage chip.
Disclosure of Invention
The invention aims to at least solve one technical problem in the prior art, and provides a light-emitting device, a display panel, a backlight module and a display device.
In order to achieve the above object, the present invention provides a light emitting device, comprising: the light emitting diode comprises a substrate, and a first electrode, a second electrode and a plurality of light emitting diodes which are arranged on the substrate;
the plurality of light emitting diodes are connected in series between the first electrode and the second electrode, and the plurality of light emitting diodes are arranged in a thickness direction of the substrate.
Optionally, the light emitting diode includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer located between the first semiconductor layer and the second semiconductor layer, where the first semiconductor layer is located on a side of the second semiconductor layer away from the substrate; a first bonding layer is arranged between every two adjacent light-emitting diodes and bonds the adjacent light-emitting diodes. The light emitting device further includes: an insulating layer covering the plurality of light emitting diodes, the first electrode and the second electrode.
Alternatively, the second semiconductor layer in the light emitting diode closest to the substrate is exposed by the first semiconductor layer and the light emitting layer of the light emitting diode, and the exposed portion of the second semiconductor layer of the light emitting diode is connected to the first electrode.
Optionally, the material of the first bonding layer comprises a conductive material.
Optionally, the material of the first bonding layer includes an insulating material, and two adjacent light emitting diodes are connected in series through a via hole on the first bonding layer.
Optionally, the light emitting device further comprises: the insulating layer covers the plurality of light emitting diodes, the first electrode and the second electrode are arranged on one side, far away from the substrate, of the insulating layer, the first electrode is connected with the second semiconductor layer, closest to the light emitting diodes of the substrate, through a first via hole in the insulating layer, and the second electrode is connected with the first semiconductor layer, far away from the light emitting diodes of the substrate, through a second via hole in the insulating layer.
Optionally, a plurality of the light emitting diodes on the substrate constitute a light emitting unit, and the light emitting device further includes: a schottky diode and a second bonding layer;
the Schottky diode and the light-emitting unit are connected between the first electrode and the second electrode in parallel, and the Schottky diode is bonded with the light-emitting unit through the second bonding layer.
The invention also provides a preparation method of the light-emitting device, which comprises the following steps:
providing a substrate;
forming a first electrode, a second electrode and a plurality of light emitting diodes on the substrate;
the plurality of light emitting diodes are connected in series between the first electrode and the second electrode, and are arranged along the thickness direction of the substrate.
Optionally, the preparation method further comprises:
and forming a first bonding layer between two adjacent light emitting diodes, wherein the adjacent light emitting diodes are bonded through the first bonding layer.
The invention also provides a display panel, which comprises the light-emitting device.
The invention also provides a backlight module, which comprises the light-emitting device.
The invention also provides a display device, which comprises the display panel or the backlight module.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
fig. 1 is a schematic view of a conventional high voltage light emitting device;
fig. 2 is one of schematic views of a light emitting device provided by an embodiment of the present invention;
fig. 3 is an equivalent circuit diagram of a light emitting device provided by an embodiment of the present invention;
fig. 4 is a second schematic diagram of a light emitting device according to an embodiment of the invention;
fig. 5 is a schematic diagram of a light emitting device connected in parallel with a schottky diode according to an embodiment of the present invention;
fig. 6 is an equivalent circuit diagram of a light emitting device connected in parallel with a schottky diode according to an embodiment of the present invention;
fig. 7 is a second schematic diagram of a light emitting device connected in parallel with a schottky diode according to an embodiment of the present invention;
FIG. 8 is a flow chart of a method of preparation provided by an embodiment of the present invention;
fig. 9a to 9f are schematic views illustrating a manufacturing process of a light emitting device according to an embodiment of the present invention.
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.
Unless otherwise defined, technical or scientific terms used in the embodiments of the present invention should have the same meaning as commonly understood by one of ordinary skill in the art to which the present invention belongs. The use of "first," "second," and similar terms in the present application do not denote any order, quantity, or importance, but rather the terms are used to distinguish one element from another. Likewise, the word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.
Fig. 1 is a schematic diagram of a conventional high voltage light emitting device, as shown in fig. 1, the conventional light emitting device includes a substrate 11 and two light emitting diodes 12, the two light emitting diodes are horizontally arranged on the substrate 11, each light emitting diode 12 includes a first semiconductor layer 12a, a second semiconductor layer 12b located on one side of the first semiconductor layer 12a close to the substrate 11, and a light emitting layer 12c located between the first semiconductor layer 12a and the second semiconductor layer 12b, the two light emitting diodes 12 are connected by a bridge portion 13 disposed therebetween, wherein one end of the bridge portion 13 is connected to the first semiconductor layer 12a of the left light emitting diode 12, and the other end of the bridge portion 13 is connected to the second semiconductor layer 12b of the right light emitting diode 12, so that the two light emitting diodes 12 are connected in series. The bridge portion 13 is insulated and spaced apart from the second semiconductor layer 12b of the left light emitting diode 12 by the insulating portion 14. However, as shown in fig. 1, in order to provide the bridge portion 13 between the two light emitting diodes 12, it is necessary to etch a portion between the two light emitting diodes 12, and the area of the light emitting layer 12c of the light emitting diode 12 after etching is reduced by 30% to 40% compared to the area of the light emitting layer 12c of the light emitting diode 12 before etching, and therefore, the light emitting areas of the two light emitting diodes 12 are reduced, and the light emitting efficiency is low.
In view of this, an embodiment of the present invention provides a light emitting device, fig. 2 is one of schematic diagrams of the light emitting device provided in the embodiment of the present invention, fig. 3 is an equivalent circuit diagram of the light emitting device provided in the embodiment of the present invention, and as shown in fig. 2 and fig. 3, the light emitting device includes: a substrate 21 and a first electrode 22, a second electrode 23 and a plurality of light emitting diodes 24 disposed on the substrate 21. A plurality of light emitting diodes 24 are connected in series between the first electrode 22 and the second electrode 23, and the plurality of light emitting diodes 24 are arranged in the thickness direction of the substrate 21.
In the embodiment of the present invention, the light emitting device may be a Mini LED light emitting device, and one of the first electrode 22 and the second electrode 23 is a cathode and the other is an anode. The material of the substrate 21 may include sapphire (Al2O3), silicon (Si), silicon carbide (SiC), or the like. The thickness direction of the substrate 21 may refer to a vertical direction in fig. 2. Among the plurality of light emitting diodes 24, an orthogonal projection of the light emitting diode 24 far from the substrate 21 on the substrate 21 may be located within an orthogonal projection range of the light emitting diode 24 close to the substrate 21 on the substrate 21.
By adopting the light emitting device of the embodiment of the invention, the plurality of light emitting diodes 24 are arranged along the thickness direction of the substrate 21, so compared with two light emitting diodes arranged along the horizontal direction in fig. 1, the plurality of light emitting diodes 24 of the embodiment of the invention do not need to be provided with bridge parts for series connection, and therefore, the light emitting diode 24 of the embodiment of the invention has larger light emitting area and high light emitting efficiency.
It should be noted that, in the embodiment of the present invention, only two light emitting diodes 24 are shown in fig. 2 and fig. 3, however, in practice, the number of the light emitting diodes 24 may be determined according to actual needs as long as a plurality of light emitting diodes 24 are connected in series between the first electrode 22 and the second electrode 23.
Referring to fig. 2 to 7, the light emitting device of the embodiment of the invention is described in detail, as shown in fig. 2, in some specific embodiments, the light emitting diode 24 includes a first semiconductor layer 241, a second semiconductor layer 242, and a light emitting layer 243 located between the first semiconductor layer 241 and the second semiconductor layer 242, and the first semiconductor layer 241 is located on a side of the second semiconductor layer 242 away from the substrate 21. A first bonding layer 25 is disposed between two adjacent light emitting diodes 24, and the first bonding layer 25 bonds the adjacent light emitting diodes 24.
In the embodiment of the present invention, the light emitting layer 243 is an MQW quantum well layer, the light emitting material of the light emitting layer 243 can be determined according to actual needs, different light emitting materials can enable the light emitting layer 243 to emit light of different colors under the driving of current, the first semiconductor layer 241 can be a P-type layer, and the second semiconductor layer 242 can be an N-type layer. In some embodiments, the second semiconductor layer 242 of the light emitting diode 24 closest to the substrate 21 is exposed by the first semiconductor layer 241 and the light emitting layer 243 of the light emitting diode 24, and the exposed portion of the second semiconductor layer 242 of the light emitting diode 24 is connected to the first electrode 22.
As shown in fig. 2, in some embodiments, the light emitting device further includes: the insulating layer 26, the insulating layer 26 covers the plurality of light emitting diodes 24, the first electrode 22 and the second electrode 23 are both disposed on a side of the insulating layer 26 away from the substrate 21, the first electrode 22 is connected to the second semiconductor layer 242 of the light emitting diode 24 closest to the substrate 21 (i.e., the lowermost light emitting diode 24 in fig. 2) through a first via hole on the insulating layer 26, and the second electrode 23 is connected to the first semiconductor layer 241 of the light emitting diode 24 farthest from the substrate 21 (i.e., the uppermost light emitting diode 24 in fig. 2) through a second via hole on the insulating layer 26.
In the embodiment of the present invention, the material of the first bonding layer 25 includes a light transmissive material, and optionally, the light transmissive material of the first bonding layer 25 may be a polarized light transmissive material, so that the light emitted from the light emitting diode 24 is converted into polarized light polarized along a predetermined direction.
In the embodiment of the present invention, by arranging the plurality of light emitting diodes 25 in the thickness direction of the substrate and bonding the plurality of light emitting diodes 24 through the first bonding layer 25, the area of the light emitting layer 243 of the light emitting diode 24 in the light emitting device can be greatly increased, thereby improving the light emitting efficiency of the light emitting device. For example, when the light emitting device includes two light emitting diodes 24 connected in series, with the light emitting device of the embodiment of the present invention, the total area of the light emitting layers 243 of the two light emitting diodes 24 may reach 180% to 190% of the total area of the light emitting layers of the two light emitting diodes in the scheme shown in fig. 1.
In some embodiments, the material of the first bonding layer 25 includes a conductive material, thereby connecting the plurality of light emitting diodes 24 in series with each other.
Fig. 4 is a second schematic diagram of a light emitting device according to an embodiment of the present invention, as shown in fig. 4, in other specific embodiments, the material of the first bonding layer 25 includes an insulating material, a via H is disposed on the first bonding layer 25, and two adjacent light emitting diodes 24 are connected in series through the via H on the first bonding layer 25.
Fig. 5 is a schematic diagram of a light emitting device connected with schottky diodes in parallel according to an embodiment of the present invention, fig. 6 is an equivalent circuit diagram of the light emitting device connected with schottky diodes in parallel according to an embodiment of the present invention, fig. 7 is a schematic diagram of a light emitting device connected with schottky diodes in parallel according to an embodiment of the present invention, and in combination with fig. 5 to 7, in some embodiments, a plurality of light emitting diodes 24 on a substrate 21 form a light emitting unit, and the light emitting device further includes: a schottky diode 27 and a second bonding layer 28. The schottky diode 27 is connected in parallel with the light emitting cell between the first electrode 22 and the second electrode 23, and the schottky diode 27 is bonded to the light emitting cell through the second bonding layer 28. The second bonding layer 28 may include a light reflecting material so that light emitted from the light emitting diode 24 may be reflected to a predetermined position.
In the embodiment of the present invention, by connecting the schottky diode 27 and the light emitting cell in parallel between the first electrode 22 and the second electrode 23, the light emitting device can be improved in the ability to resist electrostatic discharge (ESD). In the following, description will be given of a mode in which the schottky diode 27 is connected in parallel with the light emitting cell between the first electrode 22 and the second electrode 23 in the embodiment of the present invention.
As shown in fig. 5 and 6, in some specific embodiments, the material of the second bonding layer 28 includes a conductive material, the schottky diode 27 includes a third semiconductor layer 271 and a fourth semiconductor layer 272, the material of the third semiconductor layer 271 and the fourth semiconductor layer 272 may include silicon, the third semiconductor layer 271 may be a P-type layer, the fourth semiconductor layer 272 may be an N-type layer, the third semiconductor layer 271 is located on a side of the fourth semiconductor layer 272 close to the substrate 21, the third semiconductor layer 271 of the schottky diode 27 is bonded to the first semiconductor layer 241 of the uppermost light emitting diode 24 in the light emitting cell through the second bonding layer 28, and the fourth semiconductor layer 272 of the schottky diode 27 is connected to the second semiconductor layer 242 of the lowermost light emitting diode 24 in the light emitting cell through the bridge portion 29.
In the embodiment of the present invention, the light emitting device further includes the insulating portion 30, and the insulating portion 30 insulates and separates each film layer between the fourth semiconductor layer 272 of the schottky diode 27 and the second semiconductor layer 242 of the lowermost light emitting diode 24 from the bridge portion 29.
As shown in fig. 7, in other embodiments, the material of the second bonding layer 28 includes an insulating material, the schottky diode 27 includes a third semiconductor layer 271 and a fourth semiconductor layer 272, the third semiconductor layer 271 may be a P-type layer, the fourth semiconductor layer 272 may be an N-type layer, the third semiconductor layer 271 is located on a side of the fourth semiconductor layer 272 away from the substrate 21, the third semiconductor layer 271 of the schottky diode 27 is bridged with the first semiconductor layer 241 of the uppermost light emitting diode 24 in the light emitting cell by the first bridging portion 31, and the fourth semiconductor layer 272 of the schottky diode 27 is bridged with the second semiconductor layer 242 of the lowermost light emitting diode 24 in the light emitting cell by the second bridging portion 32. The light emitting device further includes a first insulating portion 33 and a second insulating portion 34, the first insulating portion 33 insulating-separating the first bridge portion 31 from the fourth semiconductor layer 272 of the schottky diode 27. The second insulating portion 34 insulates and separates a film layer between the fourth semiconductor layer 272 of the schottky diode 27 and the second semiconductor layer 242 of the lowermost light emitting diode 24 from the second bridge portion 32.
When the light emitting device includes the schottky diode 27, for example, as shown in fig. 7, the first electrode 22 may be connected to the fourth semiconductor layer 272 through a first via hole on the insulating layer 26, thereby being indirectly connected to the second semiconductor layer 242 closest to the substrate 21. The second electrode 23 is connected to the third semiconductor layer 271 through a second via hole on the insulating layer 26, thereby being indirectly connected to the second semiconductor layer 242 of the light emitting diode farthest from the substrate 21.
The embodiment of the present invention further provides a method for manufacturing a light emitting device, and fig. 8 is a flowchart of the method for manufacturing the light emitting device, where the method includes:
and S1, providing a substrate.
And S2, forming a first electrode, a second electrode and a plurality of light emitting diodes on the substrate.
The plurality of light emitting diodes are connected in series between the first electrode and the second electrode, and the plurality of light emitting diodes are arranged along the thickness direction of the substrate.
In the light-emitting device prepared by the preparation method of the embodiment of the invention, the plurality of light-emitting diodes are arranged along the thickness direction of the substrate, so compared with two light-emitting diodes arranged along the horizontal direction in fig. 1, bridge parts do not need to be arranged among the plurality of light-emitting diodes in the embodiment of the invention for series connection, and therefore, the light-emitting diode in the embodiment of the invention has larger light-emitting area and high light-emitting efficiency.
In some embodiments, a first bonding layer is formed between two adjacent light emitting diodes, and the adjacent light emitting diodes are bonded through the first bonding layer.
Specifically, the material of the first bonding layer 25 may include a conductive material or an insulating material, and the number of light emitting diodes in the light emitting device may be determined according to actual needs. In the embodiment of the present invention, taking the material of the first bonding layer 25 as a conductive material, the light emitting device includes two light emitting diodes as an example for description, specifically, fig. 9a to 9f are schematic diagrams of a manufacturing process of the light emitting device provided by the embodiment of the present invention, and as shown in fig. 9a to 9f, step S2 includes:
s21, as shown in fig. 9a, a second semiconductor material layer 242 ', a light emitting material layer 243 ' and a first semiconductor material layer 241 ' are sequentially grown on the substrate 21 in a direction away from the substrate 21. In this step, a metal organic chemical vapor deposition process (MOCVD) may be employed.
S22, as shown in fig. 9b, a first bonding material layer 25 'is formed on the side of the first semiconductor material layer 241' away from the substrate 21. In this step, Chemical Vapor Deposition (CVD) or Physical Vapor Deposition (PVD) may be employed.
S23, according to step S21, a first semiconductor material layer 241 ', a light emitting material layer 243 ', and a second semiconductor material layer 242 ' are sequentially formed on the other substrate 21, and the two substrates 21 are oppositely disposed to bond the first semiconductor material layer 241 ' on the one substrate 21 and the second semiconductor material layer 242 ' on the other substrate 21, as shown in fig. 9 c.
S24, one of the substrates 21 is stripped, and a patterning process is performed on the layers on the substrate 21 to expose the underlying second semiconductor material layer 242', thereby obtaining the light emitting diode 24, as shown in fig. 9 d.
S25, as shown in fig. 9e, an insulating layer 26 is formed on the substrate 21, and the insulating layer 26 covers the light emitting diode 24 and is formed with a first via hole and a second via hole.
S26, as shown in fig. 9f, a first electrode 22 and a second electrode 23 are formed on the side of the insulating layer 26 away from the substrate 21, the first electrode 22 is connected to the second semiconductor layer 242 of the lower layer light emitting diode 24 through a first via hole on the insulating layer 26, and the second electrode 23 is connected to the first semiconductor layer 241 of the upper layer light emitting diode 24 through a second via hole on the insulating layer 26.
According to the light-emitting device prepared by the preparation method provided by the embodiment of the invention, the total light-emitting area of the two light-emitting diodes 24 can reach 180-190% of the total light-emitting area of the two light-emitting diodes in the scheme shown in fig. 1, so that the light-emitting area of the light-emitting diodes in the light-emitting device is greatly increased, and the light-emitting efficiency of the light-emitting device is improved.
The embodiment of the invention also provides a display panel, which comprises the light-emitting device. The display panel of the embodiment of the invention adopts the light-emitting device, and the light-emitting efficiency is high, so that the power consumption of the display panel can be reduced.
The embodiment of the invention also provides a backlight module, which comprises the light-emitting device. The backlight module of the embodiment of the invention adopts the light-emitting device, and the light-emitting efficiency is high, so that the power consumption of the backlight panel can be reduced, and the light-emitting brightness of the backlight module can be effectively improved.
The embodiment of the invention also provides a display device, which comprises the display panel or the backlight module.
The display device may be: any product or component with a display function, such as electronic paper, a display panel, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator and the like.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (12)
1. A light emitting device, comprising: the light emitting diode comprises a substrate, and a first electrode, a second electrode and a plurality of light emitting diodes which are arranged on the substrate;
the plurality of light emitting diodes are connected in series between the first electrode and the second electrode, and the plurality of light emitting diodes are arranged in a thickness direction of the substrate.
2. The light-emitting device according to claim 1, wherein the light-emitting diode comprises a first semiconductor layer, a second semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer being on a side of the second semiconductor layer away from the substrate; a first bonding layer is arranged between every two adjacent light-emitting diodes and bonds the adjacent light-emitting diodes.
3. The light-emitting device according to claim 2, wherein the second semiconductor layer in the light-emitting diode closest to the substrate is exposed by the first semiconductor layer and the light-emitting layer of the light-emitting diode, and wherein an exposed portion of the second semiconductor layer of the light-emitting diode is connected to the first electrode.
4. A light emitting device as claimed in any one of claims 1 to 3, wherein the material of the first bonding layer comprises a conductive material.
5. A light emitting device according to any of claims 1 to 3, wherein the material of the first bonding layer comprises an insulating material, and two adjacent light emitting diodes are connected in series through a via hole on the first bonding layer.
6. A light emitting device according to claim 2 or 3, further comprising: the insulating layer covers the plurality of light emitting diodes, the first electrode and the second electrode are arranged on one side, far away from the substrate, of the insulating layer, the first electrode is connected with the second semiconductor layer, closest to the light emitting diodes of the substrate, through a first via hole in the insulating layer, and the second electrode is connected with the first semiconductor layer, far away from the light emitting diodes of the substrate, through a second via hole in the insulating layer.
7. The light-emitting device according to any one of claims 1 to 3, wherein a plurality of the light-emitting diodes on the substrate constitute a light-emitting unit, the light-emitting device further comprising: a schottky diode and a second bonding layer;
the Schottky diode and the light-emitting unit are connected between the first electrode and the second electrode in parallel, and the Schottky diode is bonded with the light-emitting unit through the second bonding layer.
8. A method of making a light emitting device, comprising:
providing a substrate;
forming a first electrode, a second electrode and a plurality of light emitting diodes on the substrate;
the plurality of light emitting diodes are connected in series between the first electrode and the second electrode, and are arranged along the thickness direction of the substrate.
9. The method of manufacturing according to claim 8, further comprising:
and forming a first bonding layer between two adjacent light emitting diodes, wherein the adjacent light emitting diodes are bonded through the first bonding layer.
10. A display panel comprising the light-emitting device according to any one of claims 1 to 7.
11. A backlight module comprising the light-emitting device according to any one of claims 1 to 7.
12. A display device comprising the display panel of claim 10 or the backlight module of claim 11.
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| CN202010836976.8A CN114078897A (en) | 2020-08-19 | 2020-08-19 | Light-emitting device, preparation method thereof, display panel, backlight module and display device |
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| CN202010836976.8A CN114078897A (en) | 2020-08-19 | 2020-08-19 | Light-emitting device, preparation method thereof, display panel, backlight module and display device |
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| CN114078897A true CN114078897A (en) | 2022-02-22 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023226222A1 (en) * | 2022-05-26 | 2023-11-30 | 京东方科技集团股份有限公司 | Light-emitting device, preparation method therefor, and display apparatus |
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2020
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023226222A1 (en) * | 2022-05-26 | 2023-11-30 | 京东方科技集团股份有限公司 | Light-emitting device, preparation method therefor, and display apparatus |
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