US20180158867A1 - Magnetoresistive random access memory devices and methods of manufacturing the same - Google Patents
Magnetoresistive random access memory devices and methods of manufacturing the same Download PDFInfo
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Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H01L27/228—
-
- H01L43/02—
-
- H01L43/08—
-
- H01L43/12—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
Definitions
- Example embodiments relate to semiconductor devices and methods of manufacturing the same. More particularly, example embodiments relate to magnetoresistive random access memory (MRAM) devices and methods of manufacturing the same.
- MRAM magnetoresistive random access memory
- a magnetic tunnel junction (MTJ) layer may be etched by a physical etching process to form an MTJ structure.
- other conductive layers in the MTJ layer may be also etched together with the MTJ layer, and thus elements of the etched conductive layers may be re-deposited, as conductive by-products, on a sidewall of the MTJ structure, which may generate an electrical short.
- Some example embodiments provide methods of manufacturing an MRAM device having improved characteristics.
- Some example embodiments provide MRAM devices having improved characteristics.
- a method of manufacturing an MRAM device may include forming an insulating interlayer and a lower electrode contact on a substrate, the lower electrode contact extending through the insulating interlayer.
- the method may include sequentially forming, on the insulating interlayer and the lower electrode contact, a lower electrode layer, a magnetic tunnel junction layer and a middle electrode layer.
- the method may include forming an upper electrode on the middle electrode layer and forming an upper electrode protective structure covering a sidewall of the upper electrode and an upper surface of the upper electrode.
- the method may include patterning the middle electrode layer, the magnetic tunnel junction layer and the lower electrode according to an etching process, and using the upper electrode and the upper electrode protective structure as an etching mask, to form a middle electrode, a magnetic tunnel junction pattern and a lower electrode, respectively, such that the upper electrode protective structure isolates the upper electrode from exposure during the patterning and the upper electrode protective structure remains on the upper electrode subsequently to the patterning.
- a method of manufacturing an MRAM device may include forming an insulating interlayer and a lower electrode contact on a substrate, the lower electrode contact extending through the insulating interlayer.
- the method may include sequentially forming, on the insulating interlayer and the lower electrode contact, a lower electrode layer, a magnetic tunnel junction layer and a middle electrode layer.
- the method may include forming a mold pattern on the middle electrode layer, the mold pattern including an opening, the opening exposing an upper surface of the middle electrode layer.
- the method may include forming an upper electrode and an upper electrode protective structure in the opening, the upper electrode protective structure covering a surface of the upper electrode in the opening.
- the method may include removing the mold pattern and patterning the middle electrode layer, the magnetic tunnel junction layer and the lower electrode according to an etching process, and using the upper electrode and the upper electrode protective structure as an etching mask, to form a middle electrode, a magnetic tunnel junction pattern and a lower electrode, respectively, such that the upper electrode protective structure isolates the upper electrode from exposure during the patterning and the upper electrode protective structure remains on the upper electrode subsequently to the patterning.
- a method of manufacturing an MRAM device may include forming an insulating interlayer and a lower electrode contact on a substrate, the lower electrode contact extending through the insulating interlayer.
- the method may include sequentially forming, on the insulating interlayer and the lower electrode contact, a lower electrode layer, a magnetic tunnel junction layer and a middle electrode layer.
- the method may include forming a stacked structure on the middle electrode layer, the stacked structure including an upper electrode and a hard mask.
- the method may include forming an upper electrode protective structure covering a sidewall of the upper electrode and an upper surface of the upper electrode.
- the method may include forming an insulation spacer on a sidewall of the stacked structure.
- the method may include patterning the middle electrode layer, the magnetic tunnel junction layer and the lower electrode according to an etching process, and using the upper electrode, the upper electrode protective structure and the spacer as an etching mask, to form a middle electrode, a magnetic tunnel junction pattern and a lower electrode, respectively, such that the upper electrode protective structure isolates the upper electrode from exposure during the patterning and the upper electrode protective structure remains on the upper electrode subsequently to the patterning.
- an MRAM device may include an insulating interlayer, a lower electrode contact, a lower electrode, a magnetic tunnel junction pattern, a middle electrode, an upper electrode and an upper electrode protective structure.
- the insulating interlayer may be formed on a substrate.
- the lower electrode contact may extend through the insulating interlayer.
- the lower electrode, the magnetic tunnel junction pattern and the middle electrode may be sequentially stacked on the lower electrode contact.
- the upper electrode may be formed on the middle electrode.
- An upper electrode protective structure may cover a sidewall and an upper surface of the upper electrode.
- a method may include forming an upper electrode and an upper electrode protective structure on a magnetic tunnel junction stack, the magnetic tunnel junction stack including a lower electrode layer, a magnetic tunnel junction layer, and a middle electrode layer, the upper electrode protective structure covering at least one surface of a sidewall of the upper electrode and an upper surface of the upper electrode.
- the method may include patterning the magnetic tunnel junction stack according to an etching process, using the upper electrode and the upper electrode protective structure as an etching mask, to form a middle electrode, a magnetic tunnel junction pattern and a lower electrode, respectively, such that the upper electrode protective structure isolates the upper electrode from exposure during the patterning and the upper electrode protective structure remains on the upper electrode subsequently to the patterning.
- an electrical short due to a conductive by-product may decrease.
- the MRAM device may have good characteristics.
- FIGS. 1 to 32 represent non-limiting, example embodiments as described herein.
- FIG. 1 , FIG. 2 , FIG. 3 , FIG. 4 , FIG. 5 , FIG. 6 , FIG. 7 , FIG. 8 , FIG. 9 , and FIG. 10 are cross-sectional views illustrating stages of a method of manufacturing an MRAM device according to some example embodiments;
- FIG. 11 , FIG. 12 , FIG. 13 , FIG. 14 , FIG. 15 , FIG. 16 , FIG. 17 , FIG. 18 , FIG. 19 , FIG. 20 , and FIG. 21 are cross-sectional views illustrating stages of a method of manufacturing an MRAM device according to some example embodiments;
- FIG. 22 , FIG. 23 , FIG. 24 , FIG. 25 , FIG. 26 , FIG. 27 , and FIG. 28 are cross-sectional views illustrating stages of a method of manufacturing an MRAM device according to some example embodiments;
- FIG. 29 , FIG. 30 , FIG. 31 , and FIG. 32 are cross-sectional views illustrating stages of a method of manufacturing an MRAM device according to some example embodiments.
- FIG. 33 is a diagram illustrating an electronic device according to some example embodiments.
- FIG. 1 , FIG. 2 , FIG. 3 , FIG. 4 , FIG. 5 , FIG. 6 , FIG. 7 , FIG. 8 , FIG. 9 , and FIG. 10 are cross-sectional views illustrating stages of a method of manufacturing an MRAM device according to some example embodiments.
- a first insulating interlayer 102 may be formed on a substrate 100 .
- a lower electrode contact 110 may be formed through the first insulating interlayer 102 .
- the substrate 100 may include a semiconductor material, e.g., silicon, germanium, silicon-germanium, or III-V semiconductor compounds, e.g., GaP, GaAs, GaSb, etc.
- the substrate 100 may be a silicon-on-insulator (SOI) substrate or a germanium-on-insulator (GOI) substrate.
- SOI silicon-on-insulator
- GOI germanium-on-insulator
- Various types of elements e.g., word lines, transistors, diodes, source/drain regions, source lines, contact plugs, wirings, etc., and an insulating interlayer (not shown) covering the elements may be further formed on the substrate 100 .
- the first insulating interlayer 102 may include silicon oxide, or a low-k dielectric material having a dielectric constant less than that of silicon oxide, e.g., less than about 3.9.
- an etching mask (not shown) may be formed on the first insulating interlayer 102 .
- the first insulating interlayer 102 may be anisotropically etched using the etching mask to form a first opening 104 exposing an upper surface of the substrate 100 .
- the anisotropic etching process may include a chemical etching process, e.g., a reactive ion etching (RIE) process.
- RIE reactive ion etching
- a barrier layer may be formed on an inner wall of the first opening 104 , the exposed upper surface of the substrate 100 , and the first insulating interlayer 102 .
- a first conductive layer may be formed on the first barrier layer to fill the first opening 104 .
- the first barrier layer and the first conductive layer may be formed by a chemical vapor deposition (CVD) process or an atomic layer deposition (ALD) process.
- the first barrier layer may be formed of (“may at least partially comprise”), e.g., a metal nitride, e.g., tungsten nitride, tantalum nitride, titanium nitride, etc., and/or a metal, e.g., tantalum, titanium, etc., and the first conductive layer may be formed of a metal having a low resistance, e.g., tungsten, copper, aluminum, etc.
- a metal nitride e.g., tungsten nitride, tantalum nitride, titanium nitride, etc.
- a metal e.g., tantalum, titanium, etc.
- the first conductive layer may be formed of a metal having a low resistance, e.g., tungsten, copper, aluminum, etc.
- the first barrier layer and the first conductive layer may be planarized until an upper surface of the first insulating interlayer 102 may be exposed to form a lower electrode contact 110 filling the first opening 104 .
- the lower electrode contact 110 may include a first barrier pattern 106 and a conductive pattern 108 .
- a lower electrode layer 112 , an MTJ layer 114 and a middle electrode layer 116 may be sequentially formed on the first insulating interlayer 102 and the lower electrode contact 110 to form a magnetic tunnel junction stack 119 .
- a mold layer 118 , a first hard mask layer 120 and a second hard mask layer 122 may be sequentially formed on the middle electrode layer 116 .
- the lower electrode layer 112 may be formed of (“may at least partially comprise”) a metal having a specific gravity less than a specific gravity of a metal in an upper electrode layer sequentially formed.
- the lower electrode layer 112 may be formed of e.g., a metal, e.g., tantalum, titanium, etc., and/or a metal nitride, e.g., tantalum nitride, titanium nitride, etc.
- the MTJ layer 114 may include a first magnetic layer 114 a, a tunnel barrier layer 114 b and a second magnetic layer 114 c sequentially stacked.
- the first magnetic layer 114 a may include a fixed layer, a lower ferromagnetic layer, an anti-ferromagnetic coupling spacer layer and an upper ferromagnetic layer.
- the fixed layer may be formed of, e.g., FeMn, IrMn, PtMn, MnO, MnS, MnTe, MnF 2 , FeF 2 , FeCl 2 , FeO, CoCl 2 , CoO, NiCl 2 , NiO, and/or Cr.
- Each of the lower and upper ferromagnetic layers may be formed of, e.g., Fe, Ni, and/or Co.
- the anti-ferromagnetic coupling spacer layer may be formed of, e.g., Ru, Jr, and/or Rh.
- the second magnetic layer 114 c may serve as a free layer having a changeable magnetization direction.
- the second magnetic layer 114 c may be formed of a ferromagnetic material, e.g., Fe, Ni, Co, Cr, Pt, etc.
- the second magnetic layer 114 c may further include, e.g., boron, silicon, etc.
- the second magnetic layer 114 c may include composite materials including at least two of the ferromagnetic materials.
- the second magnetic layer 114 c may include, e.g., CoFe, NiFe, FeCr, CoFeNi, PtCr, CoCrPt, CoFeB, NiFeSiB, CoFeSiB, etc.
- the tunnel barrier layer 114 b may be disposed between the first magnetic layer 114 a and second magnetic layer 114 c. Thus, the first magnetic layer 114 a and second magnetic layer 114 c may not be directly connected to each other.
- the tunnel barrier layer 114 b may include a metal oxide having an insulating material, e.g., aluminum oxide or magnesium oxide. In some example embodiments, the tunnel barrier layer 114 b may have a thickness of about 5 ⁇ to about 30 ⁇ .
- the middle electrode layer 116 may be formed of a metal having a specific gravity less than the specific gravity of the metal in the upper electrode layer 128 (refer to FIG. 4 ) sequentially formed.
- the middle electrode layer 116 may be formed of a metal, e.g., tantalum, titanium, etc., and/or a metal nitride, e.g., tantalum nitride, titanium nitride, etc.
- the mold layer 118 may serve as a mold for forming the upper electrode 128 a (refer to FIG. 5 ) and an upper electrode protective structure 130 (refer to FIG. 7 ).
- the mold layer 118 may be formed of a material having an etching selectivity with respect to the upper electrode protective structure 130 .
- the mold layer 118 may be formed of, e.g., silicon oxide, amorphous silicon or polysilicon, etc.
- the mold layer 118 may be formed to have a thickness equal to or greater than a height of a stacked structure including the upper electrode 128 a and the upper electrode protective structure 130 .
- the first hard mask layer 120 may serve as (e.g., may be configured to be) an etching mask for etching the mold layer 118 .
- the first hard mask layer 120 may be formed of a material having an etching selectivity with respect to the mold layer 118 .
- the second hard mask layer 122 may serve as an etching mask for etching the first hard mask layer 120 . In some example embodiments, the second hard mask layer 122 may not be formed.
- the first hard mask layer 120 may be a spin-on hard mask (SOH) including carbon.
- the second hard mask layer 122 may be formed of, e.g., silicon oxynitride or silicon nitride.
- the second hard mask layer 122 may be patterned by a photolithography to form a second hard mask 122 a.
- the second hard mask 122 a may include an opening at a region for forming the upper electrode 128 a.
- the first hard mask layer 120 may be etched using the second hard mask 122 a to form a first hard mask 120 a.
- the mold layer 118 may be etched using the first hard mask 120 a to form a mold pattern 118 a.
- the mold pattern 118 a may include a second opening 124 .
- the middle electrode layer 116 may be exposed by the second opening 124 .
- the first hard mask 120 a and second hard mask 122 a on the mold pattern 118 a may be removed.
- the first hard mask 120 a when the first hard mask 120 a includes SOH, the first hard mask 120 a may be removed by an ashing process. When the first hard mask 120 a is removed, the second hard mask may be lifted off to be removed.
- a first protective layer 126 having conductivity may be conformally formed on the magnetic tunnel junction stack 119 (e.g., on a surface of the mold pattern 118 a ).
- the first protective layer 126 may be formed of a metal having a specific gravity less than the specific gravity of the metal in the upper electrode layer 128 sequentially formed. In some example embodiments, the first protective layer 126 may have a specific gravity less than about 5.0.
- the first protective layer 126 may be formed of (“may at least partially comprise”), e.g., titanium or titanium nitride, etc.
- the upper electrode layer 128 may be formed on the first protective layer 126 to sufficiently (“entirely or substantially entirely”) fill the second opening 124 and/or such that the first protective layer 126 and the upper electrode layer 128 collectively fill an entirety or substantial entirety of the second opening 124 .
- the upper electrode layer 128 may be formed of a conductive material having a resistance lower than a resistance of each of the first protective layer 126 and the middle electrode layer 116 .
- the upper electrode layer 128 may be formed of a metal having a specific gravity greater than about 5 . 0 .
- the upper electrode layer 128 may be formed of, e.g., tungsten, copper, platinum, nickel, silver, gold, etc.
- the upper electrode layer 128 may be formed of tungsten.
- portions of the first protective layer 126 and the upper electrode layer 128 on a top surface of the mold pattern 118 a may be removed.
- the first protective layer 126 and the upper electrode layer 128 filling the second opening 124 may be partially removed to form a first protective pattern 126 a and the upper electrode 128 a, respectively, in a lower portion of the second opening 124 .
- the first protective pattern 126 a may cover a sidewall 128 - 2 and a bottom surface 128 - 3 of the upper electrode 128 a.
- the portions of the first protective layer 126 and the upper electrode layer 128 on the top surface of the mold pattern 118 a may be etched by an etch back process, and then portions of the first protective layer 126 and the upper electrode layer 128 in an upper portion of the second opening 124 may be etched by an etch back process.
- the portions of the first protective layer 126 and the upper electrode layer 128 on the top surface 118 - 1 of the mold pattern 118 a may be removed by a chemical mechanical polishing (CMP) process, and then the portions of the first protective layer 126 and the upper electrode layer 128 in the upper portion of the second opening 124 may be etched by an etch back process.
- CMP chemical mechanical polishing
- a second protective layer 132 may be formed on the mold pattern 118 a, the upper electrode 128 a and the first protective pattern 126 a to fill the second opening 124 .
- the second protective layer 132 may be formed of a metal having a specific gravity less than the specific gravity of the upper electrode 128 a.
- the second protective layer 132 may be formed of, e.g., titanium or titanium nitride.
- the second protective layer 132 may be formed of a material substantially the same as a material of the first protective pattern 126 a.
- the second protective layer 132 may be planarized until a top surface 118 - 1 of the mold pattern 118 a may be exposed to form a second protective pattern 132 a on the upper electrode 128 a and the first protective pattern 126 a.
- the planarization process may include a CMP process or an etch back process.
- the second protective pattern 132 a may cover an upper surface 128 - 1 of the upper electrode 128 a.
- at least one surface of the upper electrode 128 a may be covered with the first and second protective patterns 126 a and 132 a, so that the first and second protective patterns may, individually or collectively, isolate the upper electrode 128 a from exposure.
- the first and second protective patterns 126 a and 132 a may serve as the upper electrode protective structure 130 configured to protect and cap the upper electrode 128 a.
- the mold pattern 118 a may be removed by, e.g., a wet etching process.
- the mold pattern 118 a when the mold pattern 118 a includes silicon oxide, the mold pattern 118 a may be etched by a wet etching process using an etchant including hydrogen fluoride (HF)
- the middle electrode layer 116 , the MTJ layer 114 and the lower electrode layer 112 may be sequentially etched using the upper electrode 128 a and the upper electrode protective structure 130 as an etching mask.
- a structure 119 - 1 including a lower electrode 112 a, an MTJ structure 115 and a middle electrode 116 a may be formed on the lower electrode contact 110 .
- the MTJ structure 115 may have a staked structure including a first magnetic pattern 115 a, a tunnel barrier pattern 115 b and a second magnetic pattern 115 c.
- the etching process for forming the lower electrode 112 a, the MTJ structure 115 and the middle electrode 116 a is referred to as a first etching process.
- the first etching process may include a physical etching process, e.g., an ion beam etching (IBE) process.
- the first etching process may include an argon ion sputtering process.
- a first incident angle of an ion beam incident on the substrate 100 may be about 50 degrees to about 80 degrees.
- conductive layers in etching target layers may be also etched, so that a conductive by-product may be generated.
- the conductive by-product may include conductive materials included in the etching target layers.
- the conductive by-product may be re-deposited on a sidewall of the MTJ structure 115 , and thus a conductive pattern 131 may be formed on the sidewall of the MTJ structure 115 .
- the upper electrode 128 a may be covered with the upper electrode protective structure 130 , and thus the upper electrode protective structure 130 may isolate some or all surfaces 128 - 1 , 128 - 2 , 128 - 3 of the upper electrode 128 a from exposure during the first etching process, such that the upper electrode 128 a is not exposed during the first etching process.
- the upper electrode 128 a may be isolated from being etched (e.g., may not be etched) by the first etching process. That is, the conductive pattern 131 may not include a metal included in the upper electrode 128 a having a specific gravity equal to or greater than about 5.0.
- the conductive pattern 131 may include metals included in the upper electrode protective structure 130 , the lower electrode 112 a and the middle electrode 116 a. As a result, the conductive pattern 131 may be more easily removed based on not including the metal included in the upper electrode 128 a. Because the conductive pattern 131 may be more easily removed, a probability of a short of the MTJ structure 115 may be reduced based on the upper electrode protective structure 130 isolating some or all of the upper electrode 128 a from exposure during the first etching process.
- the conductive pattern 131 on the sidewall of the MTJ structure 115 may be removed by a second etching process.
- the second etching process may include a physical etching process, e.g., an ion beam etching (IBE) process.
- IBE ion beam etching
- a second incident angle of an ion beam incident on the substrate 100 may be less than the first incident angle.
- the second angle may be about 20 degrees to about 40 degrees.
- the first and second etching processes may be performed in-situ.
- the lower electrode 112 a, the MTJ structure 115 , the middle electrode 116 a, the upper electrode 128 a and the upper electrode protective structure 130 may be etched by a predetermined thickness. Also, a portion of the first insulating interlayer 102 between the lower electrodes 112 a may be partially etched. However, after (“subsequently to”) the second etching process, the upper electrode protective structure 130 may remain and cover one or more surfaces 128 - 1 , 128 - 2 , 128 - 3 of the upper electrode 128 a. Thus, the one or more surfaces of the upper electrode 128 a may not be exposed (“may be isolated from exposure by the upper electrode protective structure 130 ”), during the second etching process.
- the conductive pattern 131 includes a metal of the upper electrode 128 a having a specific gravity greater than about 5.0, the conductive pattern 131 may be strongly attached onto the sidewall of the MTJ structure 115 . Thus, the conductive pattern 131 may not be removed by the second etching process, and an electrical short between the first magnetic pattern 115 a and the second magnetic pattern 115 c in the MTJ structure 115 may be generated.
- the conductive pattern 131 may not include (“may omit,” “may be free from,” etc.) conductive materials included in the upper electrode 128 a, so that the conductive pattern 131 on the sidewall of the MTJ structure 115 may be easily removed by the second etching process.
- the electrical short between the first and second magnetic patterns 115 a and 115 c in the MTJ structure 115 may decrease.
- the by-products When the second etching process is performed, by-products having conductivity may be generated. However, the by-products may not include a metal having a specific gravity greater than about 5. Thus, the by-products may not be re-deposited, and may be removed by the second etching process.
- the MRAM device shown in FIG. 10 may be manufactured.
- an MRAM device of any of the example embodiments included herein may be incorporated into the manufacture of an electronic device, such that the electronic device includes some or all of the MRAM device.
- the MRAM device may include the first insulating interlayer 102 and the lower electrode contact 110 extending through the first insulating interlayer 102 on the substrate 100 .
- a stacked structure including the lower electrode 112 a, the MTJ structure 115 and the middle electrode 116 a may be formed on the lower electrode contact 110 .
- the upper electrode 128 a and the upper electrode protective structure 130 surrounding the surface of the upper electrode 128 a may be formed on the stacked structure.
- the upper electrode protective structure 130 may include the first protective pattern 126 a on the sidewall and the bottom of the upper electrode 128 a and the second protective pattern 132 a covering the upper electrode 128 a.
- FIG. 11 , FIG. 12 , FIG. 13 , FIG. 14 , FIG. 15 , FIG. 16 , FIG. 17 , FIG. 18 , FIG. 19 , FIG. 20 , and FIG. 21 are cross-sectional views illustrating stages of a method of manufacturing an MRAM device according to some example embodiments.
- the first insulating interlayer 102 may be formed on the substrate 100 .
- the lower electrode contact 110 may be formed though the first insulating interlayer 102 .
- the first insulating interlayer 102 and the lower electrode contact 110 may be formed by processes substantially the same as or similar to those illustrated with reference to FIG. 1 .
- the lower electrode layer 112 , the MTJ layer 114 and the middle electrode layer 116 may be sequentially formed on the first insulating interlayer 102 and the lower electrode contact 110 .
- a capping insulation layer 140 , a mold layer 142 and a first hard mask layer 144 may be formed on the middle electrode layer 116 .
- the lower electrode layer 112 , the MTJ layer 114 and the middle electrode layer 116 may be formed by processes substantially the same as or similar to those illustrated with reference to FIG. 2 .
- the capping insulation layer 140 may be formed between the middle electrode layer 116 and the mold layer 142 .
- the capping insulation layer 140 may serve as an adhesion layer for depositing the mold layer 142 .
- the capping insulation layer 140 may serve as an etch stop layer for etching the mold layer 142 .
- the capping insulation layer 140 may be formed of a material having an etching selectivity with respect to the mold layer 142 .
- the capping insulation layer 140 may include, e.g., silicon nitride. In some example embodiments, the capping insulation layer 140 may not be formed.
- the mold layer 142 may include a spin-on hard mask (SOH).
- the first hard mask layer 144 may serve as an etching mask in the etching the mold layer 142 .
- the first hard mask layer 144 may be formed of a material having an etching selectivity with respect to the mold layer 142 .
- the first hard mask layer 144 may be formed of, e.g., silicon oxynitride or silicon nitride.
- the first hard mask layer 144 may be patterned by a photolithography process to form a first hard mask 144 a.
- the first hard mask 144 a may include an opening at a portion for forming the upper electrode 128 a.
- the mold layer 142 and the capping insulation layer 140 may be etched using the first hard mask 144 a to form a mold pattern 142 a and a capping insulation pattern 140 a, respectively.
- the mold pattern 142 a and the capping insulation pattern 140 a may include a second opening 146 exposing an upper surface of the MTJ layer 114 .
- a spacer layer 148 may be conformally formed on an inner wall of the second opening 146 , the exposed upper surface of the MTJ layer 114 , and an upper surface of the first hard mask 144 a.
- the spacer layer 148 may serve as an adhesion layer for forming the first protective layer 150 (refer to FIG. 15 ).
- the spacer layer 148 may be formed of, e.g., silicon oxide.
- the spacer layer 148 may be formed by a CVD process or an ALD process.
- the spacer layer 148 may be anisotropically etched to form a spacer 148 a on a sidewall of the second opening 146 .
- the middle electrode layer 116 may be exposed by the second opening 146 .
- the first protective layer 150 may be conformally formed on the first hard mask 144 a, the spacer 148 a and the middle electrode layer 116 .
- An upper electrode layer 152 may be formed on the first protective layer 150 to fill the second opening 146 .
- the first protective layer 150 and the upper electrode layer 152 may be formed by processes substantially the same as or similar to those illustrated with reference to FIG. 4 . That is, the first protective layer 150 may have a metal having a specific gravity less than a specific gravity of the upper electrode layer 152 .
- the first protective layer 150 may include a conductive material having a resistance lower than a resistance of each of the first protective layer 150 and the middle electrode layer 116 .
- portions of the first protective layer 150 and the upper electrode layer 152 on the first hard mask 144 a may be removed. Portions of the first protective layer 150 and the upper electrode layer 152 in the second opening 146 may be partially etched to form a first protective pattern 150 a and an upper electrode 152 a, respectively, filling a lower portion of the second opening 146 .
- the first protective pattern 150 a may surround a sidewall 152 - 2 and a bottom surface 152 - 3 of the upper electrode 152 a.
- the processes may be substantially the same as or similar to those illustrated with reference to FIG. 5 .
- a second protective pattern 154 may be formed on the upper electrode 152 a and the first protective pattern 150 a.
- the second protective pattern 154 may be formed by processes substantially the same as or similar to those illustrated with reference to FIGS. 6 and 7 .
- the first and second protective patterns 150 a and 154 may form an upper electrode protective structure 155 .
- the mold pattern 142 a may be removed.
- the mold pattern 142 a when the mold pattern 142 a includes SOH, the mold pattern 142 a may be removed by an ashing process.
- the capping insulation pattern 140 a may be etched using the upper electrode 152 a and the upper electrode protective structure 155 using an etching mask.
- the middle electrode layer 116 , the MTJ layer 114 and the lower electrode layer 112 may be sequentially etched by a first etching process to form the lower electrode 112 a, the MTJ structure 115 and the middle electrode 116 a on the lower electrode contact 110 .
- the first etching process may be substantially the same as or similar to that illustrated with reference to FIG. 9 .
- a conductive by-product may be re-deposited on a sidewall of the MTJ structure 115 , and thus a conductive pattern 156 may be formed on the sidewall of the MTJ structure 115 .
- the conductive pattern 156 on the sidewall of the MTJ structure 115 may be removed by a second etching process.
- the second etching process may be substantially the same as or similar to that illustrated with reference to FIG. 10 .
- the first insulating interlayer 102 between the lower electrodes 112 a may be partially etched by a predetermined thickness.
- the spacer 148 a may be completely removed. However, after the second etching process, the upper electrode protective structure 155 may remain and cover the surface of the upper electrode 152 a.
- a semiconductor device shown in FIG. 20 may be substantially the same the semiconductor device shown in FIG. 10 .
- the spacer 148 a may remain.
- a semiconductor device shown in FIG. 21 may include the spacer 148 a on the sidewall of the upper electrode protective structure 155 .
- a lower surface of the upper electrode protective structure 155 may be greater than an upper surface of the middle electrode 116 a.
- FIG. 22 , FIG. 23 , FIG. 24 , FIG. 25 , FIG. 26 , FIG. 27 , and FIG. 28 are cross-sectional views illustrating stages of a method of manufacturing an MRAM device according to some example embodiments.
- the first insulating interlayer 102 may be formed on the substrate 100 .
- the lower electrode contact 110 may be formed through the first insulating interlayer 102 .
- the first insulating interlayer 102 and the lower electrode contact 110 may be formed by processes substantially the same as or similar to those illustrated with reference to FIG. 1 .
- the lower electrode layer 112 , the MTJ layer 114 and the middle electrode layer 116 may be sequentially formed on the first insulating interlayer 102 and the lower electrode contact 110 .
- An upper electrode layer 160 and a first hard mask layer 162 may be sequentially formed on the middle electrode layer 116 .
- the lower electrode layer 112 , the MTJ layer 114 and the middle electrode layer 116 may be formed by processes substantially the same as or similar to those illustrated with reference to FIG. 2 .
- the middle electrode layer 116 may be formed of a material having a specific gravity less than that of a material of the upper electrode layer 160 .
- the middle electrode layer 116 may be formed of a metal nitride, e.g., tantalum nitride, titanium nitride, etc., or a metal, e.g., tantalum, titanium, etc.
- the upper electrode layer 160 may be formed of a conductive material having a resistance lower than a resistance of the middle electrode layer 116 .
- the upper electrode layer 160 may be formed of a metal having a specific gravity greater than about 5.0.
- the upper electrode layer 160 may be formed of e.g., tungsten, copper, platinum, nickel, silver, gold, etc.
- the upper electrode layer 160 may be formed of tungsten.
- the first hard mask layer 162 may serve as an etching mask for etching the upper electrode layer 160 .
- the first hard mask layer 162 may be formed of an oxide, e.g., silicon oxide.
- an oxygen source gas may be provided so that a first interface oxide layer 164 may be formed on a surface of the upper electrode layer 160 .
- the first interface oxide layer 164 may include tungsten oxide.
- the first hard mask layer 162 may be patterned by a photolithography process to form a first hard mask 162 a.
- the first interface oxide layer 164 and the upper electrode layer 160 may be anisotropically etched using the first hard mask 162 a as an etching mask to form a first interface oxide pattern 164 a and the upper electrode 160 a, respectively.
- An isotropic etching process may include an RIE process.
- a spacer layer 172 may be conformally formed on surfaces of the upper electrode 160 a, the first hard mask 162 a and the middle electrode layer 116 .
- the spacer layer 172 may be formed of an insulation material including oxygen, e.g., silicon oxide.
- the spacer layer 172 may be formed by a CVD process or an ALD process.
- oxygen gas serving as a deposition source gas may be reacted with a sidewall of the upper electrode 160 a to form a second interface oxide pattern 168 a on the sidewall of the upper electrode 160 a.
- the second interface oxide pattern 168 a may include tungsten oxide.
- the first and second interface oxide patterns 164 a and 168 a may cover the sidewall and a top surface of the upper electrode 160 a.
- the first and second interface oxide patterns 164 a and 168 a may serve as an upper electrode protective structure in a subsequent process.
- the spacer layer 172 may be anisotropically etched to form a spacer 172 a on sidewalls of the second interface oxide pattern 168 a and the first hard mask 162 a. Thus, a surface of the middle electrode layer 116 may be exposed between the spacers 172 a.
- the etching process of the spacer layer 172 may include, e.g., an IBE process or an RIE process.
- the middle electrode layer 116 between the spacers 172 a may be etched to form a middle electrode 116 a.
- a conductive by-product may be generated.
- the conductive by-product may be re-deposited on a sidewall of the spacer 172 a, and thus a first conductive pattern 174 may be formed on the sidewall of the spacer 172 a.
- a first etching process for etching the middle electrode layer 116 may include a physical etching process, e.g., an ion beam etching (IBE) process.
- the first etching process may include argon ion sputtering process.
- a first incident angle of the ion beam incident on the substrate 100 may be about 80 to about 90 degrees, so that the first conductive pattern 174 may be sufficiently formed in the first etching process.
- the first conductive pattern 174 may include a metal included in the middle electrode layer 116 .
- the first conductive pattern 174 , the spacer 172 a and the first hard mask 162 a may cover a surface of the upper electrode 160 a. Thus, the surface of the upper electrode 160 a may not be exposed.
- the first conductive pattern 174 , the spacer 172 a and the first hard mask 162 a may serve as an upper electrode protective structure in a subsequent process.
- the MTJ layer 114 and the lower electrode layer 112 may be sequentially etched using a structure on the MTJ layer as an etching mask.
- the lower electrode 112 a and the MTJ structure 115 may be formed on the electrode contact 110 .
- a second etching process for forming the lower electrode 112 a and the MTJ structure 115 may include a physical etching process, e.g., an ion beam etching (IBE) process.
- IBE ion beam etching
- a second incident angle of an ion beam incident on the substrate 100 may be equal to or lower than the first incident angle.
- the second incident angle may be about 50 degrees to about 80 degrees.
- a conductive by-product including materials included in etch target layers may be generated.
- the conductive by-product may be re-deposited on a sidewall of the MTJ structure 115 , and thus a second conductive pattern 176 may be formed on the sidewall of the MTJ structure 115 .
- the first hard mask 162 a When the second etching process is performed, the first hard mask 162 a may be etched by a predetermined thickness, and the first conductive pattern 174 may be partially or completely etched. However, after the second etching process, the surface of the upper electrode 160 a may be covered with the first hard mask 162 a and the first conductive pattern 174 . In some example embodiments, after the second etching process, the surface of the upper electrode 160 a may be covered with the first hard mask 162 a and the spacer 172 a.
- the upper electrode 160 a may not be etched by the second etching process.
- the by-product may not include a metal included in the upper electrode 160 a having a specific gravity equal to or greater than about 5.0.
- the second conductive pattern 176 on the sidewall of the MTJ structure 115 may be removed by a third etching process.
- the third etching process may include a physical etching process, e.g., an ion beam etching (IBE) process.
- IBE ion beam etching
- a third incident angle of an ion beam incident on the substrate 100 may be less than the second incident angle.
- the third angle may be about 20 degrees to about 40 degrees.
- the first, second and third etching processes may be performed in-situ.
- a portion of the first hard mask 162 a and the first conductive pattern 174 may be removed.
- the first hard mask 162 a, the spacer 172 a and the first and second interface oxide patterns 164 a and 168 a may remain on the surface of the upper electrode 160 a.
- the upper electrode 160 a may not be exposed during the third etching process. That is, the first hard mask 162 a, the spacer 172 a and the first and second interface oxide patterns 164 a and 168 a may serve as the upper electrode protective structure.
- the first hard mask 162 a, the first conductive pattern 174 and the spacer 172 a may be completely removed.
- the first and second interface oxide patterns 164 a and 168 a may remain on the surface of the upper electrode 160 a.
- the upper electrode 160 a may not be exposed during the third etching process. That is, the first and second interface oxide patterns 164 a and 168 a may serve as the upper electrode protective structure.
- the second conductive pattern 176 may be easily removed by the third etching process. Thus, an electrical short between first and second magnetic patterns 155 a and 155 c in the MTJ structure 115 may decrease.
- the upper electrode 160 a may not be exposed, so that by-products may not include a metal having a specific gravity equal to or greater than about 5.0. Thus, the by-products may not be re-deposited, and may be removed by the third etching process.
- the semiconductor device shown in FIG. 27 or FIG. 28 may be manufactured.
- the semiconductor device may include the first insulating interlayer 102 and the lower electrode contact 110 extending through the first insulating interlayer 102 on the substrate 100 .
- a stacked structure including the lower electrode 112 a, the MTJ structure 115 and the middle electrode 116 a may be formed on the lower electrode contact 110 .
- the upper electrode 160 a and the upper electrode protective structure surrounding the upper electrode 160 a may be formed on the stacked structure.
- the upper electrode protective structure may include at least the first and second oxide patterns 164 a and 168 a that may be formed by oxidizing the surface of the upper electrode 160 a.
- FIG. 29 , FIG. 30 , FIG. 31 , and FIG. 32 are cross-sectional views illustrating stages of a method of manufacturing an MRAM device according to some example embodiments.
- an isolation layer 202 may be formed on a substrate 200 , and thus an active region and a field region may be defined in the substrate 200 .
- the isolation layer 202 may be formed by a shallow trench isolation (STI) process.
- a plurality of active regions may be spaced apart from each other, and may be regularly arranged.
- a plurality of transistors 216 may be formed on the substrate 200 .
- a mask (not shown) may be formed on the substrate 200 .
- the substrate 200 may be etched using the mask to form a plurality of trenches 204 extending in a first direction.
- Each of the active regions may include two trenches 204 thereon.
- a gate structure may be formed to fill each of the trenches 204 , and the gate structure may include a gate insulation pattern 206 , a gate electrode 208 , and a hard mask 210 sequentially stacked. Impurities may be doped into portions of the active region adjacent the gate structure to form a source region 212 and a drain region 214 .
- the source region 212 may be commonly used in adjacent two transistors.
- a buried gate type transistor may be formed on the substrate 200 .
- a first lower insulating interlayer 230 a may be formed on the substrate 200 .
- the first lower insulating interlayer 230 a may be partially etched to form a first opening (not shown) exposing the source region 212 .
- a conductive layer may be formed to fill the first opening, and the conductive layer may be planarized to form a source line 232 contacting the source region 212 .
- a second lower insulating interlayer 230 b may be formed on the first lower insulating interlayer 230 a and the source line 232 .
- a second opening (not shown) exposing the drain region 214 may be formed through the first and second lower insulating interlayers 230 a and 230 b.
- a second conductive layer may be formed to fill the second opening, and the second conductive layer may be planarized to form a contact plug 234 contacting the drain region 214 .
- a third lower insulating interlayer 238 may be formed on the second lower insulating interlayer 230 b.
- a first wiring structure 236 may be formed on the contact plug 234 through the third lower insulating interlayer 238 .
- An etch stop layer 240 may be formed on the third lower insulating interlayer 238 and the first wiring structure 236 .
- the third lower insulating interlayer 238 may be formed by a CVD process, an ALD process or a spin coating process.
- the first wiring structure 236 may include a barrier layer 236 a and a metal pattern 236 b.
- the first wiring structure 236 may be formed by a dual damascene process or a single damascene process.
- the metal pattern 236 b may include, e.g., copper.
- the first wiring structure 236 may be formed by a photolithography process.
- the metal pattern 236 b may include, e.g., tungsten, aluminum, etc.
- the etch stop layer 240 may be formed of, e.g., silicon nitride or silicon oxynitride by a CVD process or an ALD process.
- processes substantially the same as or similar to those illustrated with reference to FIGS. 1 to 10 may be performed to form a structure shown in FIG. 10 on the first wiring structure 236 .
- the first insulating interlayer 102 and the lower electrode contact 110 extending through the first insulating interlayer 102 may be formed on the etch stop layer 240 .
- the lower electrode contact 110 may contact the first wiring structure 236 .
- a stacked structure including the lower electrode 112 a, the MTJ structure 115 and the middle electrode 116 a may be formed on the lower electrode contact 110 .
- the upper electrode 128 a and the upper electrode protective structure 130 surrounding a surface of the upper electrode 128 a may be formed on the stacked structure.
- the upper electrode protective structure 130 may include the first protective pattern 126 a on a sidewall and a lower surface of the upper electrode 128 a and the second protective pattern 132 a covering an upper surface of the upper electrode 128 a.
- processes substantially the same as or similar to those illustrated with reference to FIGS. 11 to 21 may be performed to form a structure shown in FIG. 20 or 21 on the first wiring structure 236 .
- processes substantially the same as or similar to those illustrated with reference to FIGS. 22 to 28 may be performed to form a structure shown in FIG. 27 or 28 on the first wiring structure 236 .
- a second insulating interlayer 242 may be formed on the first insulating interlayer 102 to fill a gap (not shown) between structures each including the upper electrodes 128 a and the upper electrode protective structure 130 .
- an upper surface of the second insulating interlayer 242 may be planarized.
- the second insulating interlayer 242 may be etched to form a trench (not shown) for forming a bit line 250 .
- the trench may extend in a second direction substantially perpendicular to the first direction.
- the upper electrode protective structure has conductivity
- the upper electrode 128 a or the upper electrode protective structure 130 may be exposed by the trench.
- the upper electrode 128 a may be exposed by the trench.
- the bit line 250 may be formed to fill the trench.
- the bit line 250 may be formed by forming a barrier layer on an inner wall of the trench, forming a metal layer on the barrier layer to fill the trench, and planarizing the metal layer and the barrier layer.
- the bit line 250 may include a barrier pattern 250 a and a metal pattern 250 b, and may be electrically connected with the upper electrode 128 a.
- an upper insulating interlayer (not shown) may be further formed on the bit line 250 .
- the MRAM device may be used in a memory device included in an electronic product such as a mobile device, a memory card, and a computer.
- FIG. 33 is a diagram illustrating an electronic device 3300 according to some example embodiments.
- the electronic device 3300 includes a memory 3320 , a processor 3330 , a user interface 3340 , and a communication interface 3350 .
- the electronic device 3300 may be included in one or more various electronic devices.
- the electronic device 3300 may include a computing device.
- a computing device may include a personal computer (PC), a tablet computer, a laptop computer, a netbook, some combination thereof, or the like.
- the memory 3320 , the processor 3330 , the user interface 3340 , and the communication interface 3350 may communicate with one another through a bus 3310 .
- the electronic device 3300 may be manufactured to include one or more of the MRAM devices included herein with regard to any of the example embodiments of MRAM devices included herein.
- the communication interface 3350 may communicate data from an external device using various Internet protocols.
- the external device may include, for example, a computing device.
- the processor 3330 may execute a program and control the electronic device 3300 .
- a program code to be executed by the processor 3330 may be stored in the memory 3320 .
- An electronic system may be connected to an external device through an input/output device (not shown) and exchange data with the external device.
- the memory 3320 may store information.
- the memory 3320 may be a volatile or a nonvolatile memory.
- the memory may be a magnetic memory device (e.g., an MRAM) according to any of the example embodiments of MRAM devices included herein.
- the memory 3320 may be a non-transitory computer readable storage medium.
- the memory may store computer-readable instructions that, when executed, cause the execution of one or more methods, functions, processes, etc. as described herein.
- the processor 3330 may execute one or more of the computer-readable instructions stored at the memory 3320 .
- the communication interface 3350 may include a USB and/or HDMI interface. In some example embodiments, the communication interface 3350 may include a wireless communication interface.
- an electronic device 3300 may be configured to implement some or all of the operations described and illustrated herein. In some example embodiments, the electronic device 3300 may be configured to at least partially fabricate (“form,” “manufacture,” etc.) an MRAM device and/or electronic device according to any of the example embodiments included herein.
Abstract
Manufacturing an MRAM device may include forming an upper electrode on a magnetic tunnel junction stack, where the stack may include a lower electrode layer, a magnetic tunnel junction layer and a middle electrode layer that are sequentially formed on an insulating interlayer and a lower electrode contact on a substrate. The upper electrode may be formed on the middle electrode layer. An upper electrode protective structure may be formed to cover at least a sidewall and an upper surface of the upper electrode. The middle electrode layer, the magnetic tunnel junction layer and the lower electrode may be patterned by an etching process to form a middle electrode, a magnetic tunnel junction pattern and a lower electrode, respectively. The upper electrode protective structure may isolate the upper electrode from exposure during the patterning, and the upper electrode protective structure may remain on the upper electrode subsequently to the patterning.
Description
- This application claims priority under 35 USC § 119 to Korean Patent Application No. 10-2016-0165181, filed on Dec. 6, 2016 in the Korean Intellectual Property Office (KIPO), the contents of which are herein incorporated by reference in their entirety.
- Example embodiments relate to semiconductor devices and methods of manufacturing the same. More particularly, example embodiments relate to magnetoresistive random access memory (MRAM) devices and methods of manufacturing the same.
- When an MRAM device is manufactured, a magnetic tunnel junction (MTJ) layer may be etched by a physical etching process to form an MTJ structure. During the physical etching process, other conductive layers in the MTJ layer may be also etched together with the MTJ layer, and thus elements of the etched conductive layers may be re-deposited, as conductive by-products, on a sidewall of the MTJ structure, which may generate an electrical short.
- Some example embodiments provide methods of manufacturing an MRAM device having improved characteristics.
- Some example embodiments provide MRAM devices having improved characteristics.
- According to some example embodiments, a method of manufacturing an MRAM device may include forming an insulating interlayer and a lower electrode contact on a substrate, the lower electrode contact extending through the insulating interlayer. The method may include sequentially forming, on the insulating interlayer and the lower electrode contact, a lower electrode layer, a magnetic tunnel junction layer and a middle electrode layer. The method may include forming an upper electrode on the middle electrode layer and forming an upper electrode protective structure covering a sidewall of the upper electrode and an upper surface of the upper electrode. The method may include patterning the middle electrode layer, the magnetic tunnel junction layer and the lower electrode according to an etching process, and using the upper electrode and the upper electrode protective structure as an etching mask, to form a middle electrode, a magnetic tunnel junction pattern and a lower electrode, respectively, such that the upper electrode protective structure isolates the upper electrode from exposure during the patterning and the upper electrode protective structure remains on the upper electrode subsequently to the patterning.
- According to some example embodiments, a method of manufacturing an MRAM device may include forming an insulating interlayer and a lower electrode contact on a substrate, the lower electrode contact extending through the insulating interlayer. The method may include sequentially forming, on the insulating interlayer and the lower electrode contact, a lower electrode layer, a magnetic tunnel junction layer and a middle electrode layer. The method may include forming a mold pattern on the middle electrode layer, the mold pattern including an opening, the opening exposing an upper surface of the middle electrode layer. The method may include forming an upper electrode and an upper electrode protective structure in the opening, the upper electrode protective structure covering a surface of the upper electrode in the opening. The method may include removing the mold pattern and patterning the middle electrode layer, the magnetic tunnel junction layer and the lower electrode according to an etching process, and using the upper electrode and the upper electrode protective structure as an etching mask, to form a middle electrode, a magnetic tunnel junction pattern and a lower electrode, respectively, such that the upper electrode protective structure isolates the upper electrode from exposure during the patterning and the upper electrode protective structure remains on the upper electrode subsequently to the patterning.
- According to some example embodiments, a method of manufacturing an MRAM device may include forming an insulating interlayer and a lower electrode contact on a substrate, the lower electrode contact extending through the insulating interlayer. The method may include sequentially forming, on the insulating interlayer and the lower electrode contact, a lower electrode layer, a magnetic tunnel junction layer and a middle electrode layer. The method may include forming a stacked structure on the middle electrode layer, the stacked structure including an upper electrode and a hard mask. The method may include forming an upper electrode protective structure covering a sidewall of the upper electrode and an upper surface of the upper electrode. The method may include forming an insulation spacer on a sidewall of the stacked structure. The method may include patterning the middle electrode layer, the magnetic tunnel junction layer and the lower electrode according to an etching process, and using the upper electrode, the upper electrode protective structure and the spacer as an etching mask, to form a middle electrode, a magnetic tunnel junction pattern and a lower electrode, respectively, such that the upper electrode protective structure isolates the upper electrode from exposure during the patterning and the upper electrode protective structure remains on the upper electrode subsequently to the patterning.
- According to some example embodiments an MRAM device may include an insulating interlayer, a lower electrode contact, a lower electrode, a magnetic tunnel junction pattern, a middle electrode, an upper electrode and an upper electrode protective structure. The insulating interlayer may be formed on a substrate. The lower electrode contact may extend through the insulating interlayer. The lower electrode, the magnetic tunnel junction pattern and the middle electrode may be sequentially stacked on the lower electrode contact. The upper electrode may be formed on the middle electrode. An upper electrode protective structure may cover a sidewall and an upper surface of the upper electrode.
- According to some example embodiments, a method may include forming an upper electrode and an upper electrode protective structure on a magnetic tunnel junction stack, the magnetic tunnel junction stack including a lower electrode layer, a magnetic tunnel junction layer, and a middle electrode layer, the upper electrode protective structure covering at least one surface of a sidewall of the upper electrode and an upper surface of the upper electrode. The method may include patterning the magnetic tunnel junction stack according to an etching process, using the upper electrode and the upper electrode protective structure as an etching mask, to form a middle electrode, a magnetic tunnel junction pattern and a lower electrode, respectively, such that the upper electrode protective structure isolates the upper electrode from exposure during the patterning and the upper electrode protective structure remains on the upper electrode subsequently to the patterning.
- In the MRAM device according to some example embodiments, an electrical short due to a conductive by-product may decrease. Thus, the MRAM device may have good characteristics.
- Example embodiments will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings.
FIGS. 1 to 32 represent non-limiting, example embodiments as described herein. -
FIG. 1 ,FIG. 2 ,FIG. 3 ,FIG. 4 ,FIG. 5 ,FIG. 6 ,FIG. 7 ,FIG. 8 ,FIG. 9 , andFIG. 10 are cross-sectional views illustrating stages of a method of manufacturing an MRAM device according to some example embodiments; -
FIG. 11 ,FIG. 12 ,FIG. 13 ,FIG. 14 ,FIG. 15 ,FIG. 16 ,FIG. 17 ,FIG. 18 ,FIG. 19 ,FIG. 20 , andFIG. 21 are cross-sectional views illustrating stages of a method of manufacturing an MRAM device according to some example embodiments; -
FIG. 22 ,FIG. 23 ,FIG. 24 ,FIG. 25 ,FIG. 26 ,FIG. 27 , andFIG. 28 are cross-sectional views illustrating stages of a method of manufacturing an MRAM device according to some example embodiments; -
FIG. 29 ,FIG. 30 ,FIG. 31 , andFIG. 32 are cross-sectional views illustrating stages of a method of manufacturing an MRAM device according to some example embodiments; and -
FIG. 33 is a diagram illustrating an electronic device according to some example embodiments. - Some detailed example embodiments are disclosed herein. However, specific structural and functional details disclosed herein are merely representative for purposes of describing example embodiments. Some example embodiments may be embodied in many alternate forms and should not be construed as limited to only the example embodiments set forth herein.
- When the terms “about” or “substantially” are used in this specification in connection with a numerical value, it is intended that the associated numerical value include a tolerance of ±10% around the stated numerical value. The expression “up to” includes amounts of zero to the expressed upper limit and all values therebetween. When ranges are specified, the range includes all values therebetween such as increments of 0.1%. Moreover, when the words “generally” and “substantially” are used in connection with geometric shapes, it is intended that precision of the geometric shape is not required but that latitude for the shape is within the scope of the disclosure.
-
FIG. 1 ,FIG. 2 ,FIG. 3 ,FIG. 4 ,FIG. 5 ,FIG. 6 ,FIG. 7 ,FIG. 8 ,FIG. 9 , andFIG. 10 are cross-sectional views illustrating stages of a method of manufacturing an MRAM device according to some example embodiments. - Referring to
FIG. 1 , a firstinsulating interlayer 102 may be formed on asubstrate 100. Alower electrode contact 110 may be formed through the firstinsulating interlayer 102. - The
substrate 100 may include a semiconductor material, e.g., silicon, germanium, silicon-germanium, or III-V semiconductor compounds, e.g., GaP, GaAs, GaSb, etc. In some example embodiments, thesubstrate 100 may be a silicon-on-insulator (SOI) substrate or a germanium-on-insulator (GOI) substrate. - Various types of elements (not shown), e.g., word lines, transistors, diodes, source/drain regions, source lines, contact plugs, wirings, etc., and an insulating interlayer (not shown) covering the elements may be further formed on the
substrate 100. - The first
insulating interlayer 102 may include silicon oxide, or a low-k dielectric material having a dielectric constant less than that of silicon oxide, e.g., less than about 3.9. - In some example embodiments an etching mask (not shown) may be formed on the first
insulating interlayer 102. The firstinsulating interlayer 102 may be anisotropically etched using the etching mask to form afirst opening 104 exposing an upper surface of thesubstrate 100. The anisotropic etching process may include a chemical etching process, e.g., a reactive ion etching (RIE) process. - A barrier layer may be formed on an inner wall of the
first opening 104, the exposed upper surface of thesubstrate 100, and the firstinsulating interlayer 102. A first conductive layer may be formed on the first barrier layer to fill thefirst opening 104. In some example embodiments, the first barrier layer and the first conductive layer may be formed by a chemical vapor deposition (CVD) process or an atomic layer deposition (ALD) process. The first barrier layer may be formed of (“may at least partially comprise”), e.g., a metal nitride, e.g., tungsten nitride, tantalum nitride, titanium nitride, etc., and/or a metal, e.g., tantalum, titanium, etc., and the first conductive layer may be formed of a metal having a low resistance, e.g., tungsten, copper, aluminum, etc. - The first barrier layer and the first conductive layer may be planarized until an upper surface of the first insulating
interlayer 102 may be exposed to form alower electrode contact 110 filling thefirst opening 104. Thelower electrode contact 110 may include afirst barrier pattern 106 and aconductive pattern 108. - Referring to
FIG. 2 , alower electrode layer 112, anMTJ layer 114 and amiddle electrode layer 116 may be sequentially formed on the first insulatinginterlayer 102 and thelower electrode contact 110 to form a magnetictunnel junction stack 119. Amold layer 118, a firsthard mask layer 120 and a secondhard mask layer 122 may be sequentially formed on themiddle electrode layer 116. - The
lower electrode layer 112 may be formed of (“may at least partially comprise”) a metal having a specific gravity less than a specific gravity of a metal in an upper electrode layer sequentially formed. Thelower electrode layer 112 may be formed of e.g., a metal, e.g., tantalum, titanium, etc., and/or a metal nitride, e.g., tantalum nitride, titanium nitride, etc. - The
MTJ layer 114 may include a firstmagnetic layer 114 a, atunnel barrier layer 114 b and a secondmagnetic layer 114 c sequentially stacked. - In some example embodiments, the first
magnetic layer 114 a may include a fixed layer, a lower ferromagnetic layer, an anti-ferromagnetic coupling spacer layer and an upper ferromagnetic layer. In this case, the fixed layer may be formed of, e.g., FeMn, IrMn, PtMn, MnO, MnS, MnTe, MnF2, FeF2, FeCl2, FeO, CoCl2, CoO, NiCl2, NiO, and/or Cr. Each of the lower and upper ferromagnetic layers may be formed of, e.g., Fe, Ni, and/or Co. The anti-ferromagnetic coupling spacer layer may be formed of, e.g., Ru, Jr, and/or Rh. - In some example embodiments, the second
magnetic layer 114 c may serve as a free layer having a changeable magnetization direction. In this case, the secondmagnetic layer 114 c may be formed of a ferromagnetic material, e.g., Fe, Ni, Co, Cr, Pt, etc. The secondmagnetic layer 114 c may further include, e.g., boron, silicon, etc. The secondmagnetic layer 114 c may include composite materials including at least two of the ferromagnetic materials. For example, the secondmagnetic layer 114 c may include, e.g., CoFe, NiFe, FeCr, CoFeNi, PtCr, CoCrPt, CoFeB, NiFeSiB, CoFeSiB, etc. - The
tunnel barrier layer 114 b may be disposed between the firstmagnetic layer 114 a and secondmagnetic layer 114 c. Thus, the firstmagnetic layer 114 a and secondmagnetic layer 114 c may not be directly connected to each other. - In some example embodiments, the
tunnel barrier layer 114 b may include a metal oxide having an insulating material, e.g., aluminum oxide or magnesium oxide. In some example embodiments, thetunnel barrier layer 114 b may have a thickness of about 5 Å to about 30 Å. - The
middle electrode layer 116 may be formed of a metal having a specific gravity less than the specific gravity of the metal in the upper electrode layer 128 (refer toFIG. 4 ) sequentially formed. Themiddle electrode layer 116 may be formed of a metal, e.g., tantalum, titanium, etc., and/or a metal nitride, e.g., tantalum nitride, titanium nitride, etc. - The
mold layer 118 may serve as a mold for forming theupper electrode 128 a (refer toFIG. 5 ) and an upper electrode protective structure 130 (refer toFIG. 7 ). Themold layer 118 may be formed of a material having an etching selectivity with respect to the upper electrodeprotective structure 130. In some example embodiments, themold layer 118 may be formed of, e.g., silicon oxide, amorphous silicon or polysilicon, etc. Themold layer 118 may be formed to have a thickness equal to or greater than a height of a stacked structure including theupper electrode 128 a and the upper electrodeprotective structure 130. - The first
hard mask layer 120 may serve as (e.g., may be configured to be) an etching mask for etching themold layer 118. Thus, the firsthard mask layer 120 may be formed of a material having an etching selectivity with respect to themold layer 118. - The second
hard mask layer 122 may serve as an etching mask for etching the firsthard mask layer 120. In some example embodiments, the secondhard mask layer 122 may not be formed. - In some example embodiments, the first
hard mask layer 120 may be a spin-on hard mask (SOH) including carbon. The secondhard mask layer 122 may be formed of, e.g., silicon oxynitride or silicon nitride. - Referring to
FIG. 3 , the secondhard mask layer 122 may be patterned by a photolithography to form a secondhard mask 122 a. The secondhard mask 122 a may include an opening at a region for forming theupper electrode 128 a. - The first
hard mask layer 120 may be etched using the secondhard mask 122 a to form a firsthard mask 120 a. Themold layer 118 may be etched using the firsthard mask 120 a to form amold pattern 118 a. Themold pattern 118 a may include asecond opening 124. Themiddle electrode layer 116 may be exposed by thesecond opening 124. - Referring to
FIG. 4 , the firsthard mask 120 a and secondhard mask 122 a on themold pattern 118 a may be removed. - In some example embodiments, when the first
hard mask 120 a includes SOH, the firsthard mask 120 a may be removed by an ashing process. When the firsthard mask 120 a is removed, the second hard mask may be lifted off to be removed. - A first
protective layer 126 having conductivity may be conformally formed on the magnetic tunnel junction stack 119 (e.g., on a surface of themold pattern 118 a). The firstprotective layer 126 may be formed of a metal having a specific gravity less than the specific gravity of the metal in theupper electrode layer 128 sequentially formed. In some example embodiments, the firstprotective layer 126 may have a specific gravity less than about 5.0. In some example embodiments, the firstprotective layer 126 may be formed of (“may at least partially comprise”), e.g., titanium or titanium nitride, etc. - The
upper electrode layer 128 may be formed on the firstprotective layer 126 to sufficiently (“entirely or substantially entirely”) fill thesecond opening 124 and/or such that the firstprotective layer 126 and theupper electrode layer 128 collectively fill an entirety or substantial entirety of thesecond opening 124. Theupper electrode layer 128 may be formed of a conductive material having a resistance lower than a resistance of each of the firstprotective layer 126 and themiddle electrode layer 116. Theupper electrode layer 128 may be formed of a metal having a specific gravity greater than about 5.0. In some example embodiments, theupper electrode layer 128 may be formed of, e.g., tungsten, copper, platinum, nickel, silver, gold, etc. For example, theupper electrode layer 128 may be formed of tungsten. - Referring to
FIG. 5 , portions of the firstprotective layer 126 and theupper electrode layer 128 on a top surface of themold pattern 118 a may be removed. The firstprotective layer 126 and theupper electrode layer 128 filling thesecond opening 124 may be partially removed to form a firstprotective pattern 126 a and theupper electrode 128 a, respectively, in a lower portion of thesecond opening 124. The firstprotective pattern 126 a may cover a sidewall 128-2 and a bottom surface 128-3 of theupper electrode 128 a. - In some example embodiments, the portions of the first
protective layer 126 and theupper electrode layer 128 on the top surface of themold pattern 118 a may be etched by an etch back process, and then portions of the firstprotective layer 126 and theupper electrode layer 128 in an upper portion of thesecond opening 124 may be etched by an etch back process. - In some example embodiments, the portions of the first
protective layer 126 and theupper electrode layer 128 on the top surface 118-1 of themold pattern 118 a may be removed by a chemical mechanical polishing (CMP) process, and then the portions of the firstprotective layer 126 and theupper electrode layer 128 in the upper portion of thesecond opening 124 may be etched by an etch back process. - Referring to
FIG. 6 , a secondprotective layer 132 may be formed on themold pattern 118 a, theupper electrode 128 a and the firstprotective pattern 126 a to fill thesecond opening 124. - The second
protective layer 132 may be formed of a metal having a specific gravity less than the specific gravity of theupper electrode 128 a. In some example embodiments, the secondprotective layer 132 may be formed of, e.g., titanium or titanium nitride. In some example embodiments, the secondprotective layer 132 may be formed of a material substantially the same as a material of the firstprotective pattern 126 a. - Referring to
FIG. 7 , the secondprotective layer 132 may be planarized until a top surface 118-1 of themold pattern 118 a may be exposed to form a secondprotective pattern 132 a on theupper electrode 128 a and the firstprotective pattern 126 a. The planarization process may include a CMP process or an etch back process. - The second
protective pattern 132 a may cover an upper surface 128-1 of theupper electrode 128 a. Thus, at least one surface of theupper electrode 128 a may be covered with the first and secondprotective patterns upper electrode 128 a from exposure. The first and secondprotective patterns protective structure 130 configured to protect and cap theupper electrode 128 a. - Referring to
FIG. 8 , themold pattern 118 a may be removed by, e.g., a wet etching process. - In some example embodiments, when the
mold pattern 118 a includes silicon oxide, themold pattern 118 a may be etched by a wet etching process using an etchant including hydrogen fluoride (HF) - Referring to
FIG. 9 , themiddle electrode layer 116, theMTJ layer 114 and thelower electrode layer 112 may be sequentially etched using theupper electrode 128 a and the upper electrodeprotective structure 130 as an etching mask. Thus, a structure 119-1 including alower electrode 112 a, anMTJ structure 115 and amiddle electrode 116 a may be formed on thelower electrode contact 110. TheMTJ structure 115 may have a staked structure including a firstmagnetic pattern 115 a, atunnel barrier pattern 115 b and a secondmagnetic pattern 115 c. Hereinafter, the etching process for forming thelower electrode 112 a, theMTJ structure 115 and themiddle electrode 116 a is referred to as a first etching process. - In some example embodiments, the first etching process may include a physical etching process, e.g., an ion beam etching (IBE) process. In some example embodiments, the first etching process may include an argon ion sputtering process. In the first etching process, a first incident angle of an ion beam incident on the
substrate 100 may be about 50 degrees to about 80 degrees. - When the first etching process is performed, conductive layers in etching target layers may be also etched, so that a conductive by-product may be generated. The conductive by-product may include conductive materials included in the etching target layers. The conductive by-product may be re-deposited on a sidewall of the
MTJ structure 115, and thus aconductive pattern 131 may be formed on the sidewall of theMTJ structure 115. - In some example embodiments, the
upper electrode 128 a may be covered with the upper electrodeprotective structure 130, and thus the upper electrodeprotective structure 130 may isolate some or all surfaces 128-1, 128-2, 128-3 of theupper electrode 128 a from exposure during the first etching process, such that theupper electrode 128 a is not exposed during the first etching process. Thus, theupper electrode 128 a may be isolated from being etched (e.g., may not be etched) by the first etching process. That is, theconductive pattern 131 may not include a metal included in theupper electrode 128 a having a specific gravity equal to or greater than about 5.0. That is, theconductive pattern 131 may include metals included in the upper electrodeprotective structure 130, thelower electrode 112 a and themiddle electrode 116 a. As a result, theconductive pattern 131 may be more easily removed based on not including the metal included in theupper electrode 128 a. Because theconductive pattern 131 may be more easily removed, a probability of a short of theMTJ structure 115 may be reduced based on the upper electrodeprotective structure 130 isolating some or all of theupper electrode 128 a from exposure during the first etching process. - Referring to
FIG. 10 , theconductive pattern 131 on the sidewall of theMTJ structure 115 may be removed by a second etching process. - In some example embodiments, the second etching process may include a physical etching process, e.g., an ion beam etching (IBE) process. In the second etching process, a second incident angle of an ion beam incident on the
substrate 100 may be less than the first incident angle. The second angle may be about 20 degrees to about 40 degrees. The first and second etching processes may be performed in-situ. - In the second etching process, the
lower electrode 112 a, theMTJ structure 115, themiddle electrode 116 a, theupper electrode 128 a and the upper electrodeprotective structure 130 may be etched by a predetermined thickness. Also, a portion of the first insulatinginterlayer 102 between thelower electrodes 112 a may be partially etched. However, after (“subsequently to”) the second etching process, the upper electrodeprotective structure 130 may remain and cover one or more surfaces 128-1, 128-2, 128-3 of theupper electrode 128 a. Thus, the one or more surfaces of theupper electrode 128 a may not be exposed (“may be isolated from exposure by the upper electrodeprotective structure 130”), during the second etching process. - If the
conductive pattern 131 includes a metal of theupper electrode 128 a having a specific gravity greater than about 5.0, theconductive pattern 131 may be strongly attached onto the sidewall of theMTJ structure 115. Thus, theconductive pattern 131 may not be removed by the second etching process, and an electrical short between the firstmagnetic pattern 115 a and the secondmagnetic pattern 115 c in theMTJ structure 115 may be generated. - However, the
conductive pattern 131 may not include (“may omit,” “may be free from,” etc.) conductive materials included in theupper electrode 128 a, so that theconductive pattern 131 on the sidewall of theMTJ structure 115 may be easily removed by the second etching process. Thus, the electrical short between the first and secondmagnetic patterns MTJ structure 115 may decrease. - When the second etching process is performed, by-products having conductivity may be generated. However, the by-products may not include a metal having a specific gravity greater than about 5. Thus, the by-products may not be re-deposited, and may be removed by the second etching process.
- Thus, the MRAM device shown in
FIG. 10 may be manufactured. In some example embodiments, an MRAM device of any of the example embodiments included herein may be incorporated into the manufacture of an electronic device, such that the electronic device includes some or all of the MRAM device. - The MRAM device may include the first insulating
interlayer 102 and thelower electrode contact 110 extending through the first insulatinginterlayer 102 on thesubstrate 100. A stacked structure including thelower electrode 112 a, theMTJ structure 115 and themiddle electrode 116 a may be formed on thelower electrode contact 110. Theupper electrode 128 a and the upper electrodeprotective structure 130 surrounding the surface of theupper electrode 128 a may be formed on the stacked structure. The upper electrodeprotective structure 130 may include the firstprotective pattern 126 a on the sidewall and the bottom of theupper electrode 128 a and the secondprotective pattern 132 a covering theupper electrode 128 a. -
FIG. 11 ,FIG. 12 ,FIG. 13 ,FIG. 14 ,FIG. 15 ,FIG. 16 ,FIG. 17 ,FIG. 18 ,FIG. 19 ,FIG. 20 , andFIG. 21 are cross-sectional views illustrating stages of a method of manufacturing an MRAM device according to some example embodiments. - Referring to
FIG. 11 , the first insulatinginterlayer 102 may be formed on thesubstrate 100. Thelower electrode contact 110 may be formed though the first insulatinginterlayer 102. The first insulatinginterlayer 102 and thelower electrode contact 110 may be formed by processes substantially the same as or similar to those illustrated with reference toFIG. 1 . - The
lower electrode layer 112, theMTJ layer 114 and themiddle electrode layer 116 may be sequentially formed on the first insulatinginterlayer 102 and thelower electrode contact 110. A cappinginsulation layer 140, amold layer 142 and a firsthard mask layer 144 may be formed on themiddle electrode layer 116. Thelower electrode layer 112, theMTJ layer 114 and themiddle electrode layer 116 may be formed by processes substantially the same as or similar to those illustrated with reference toFIG. 2 . - The capping
insulation layer 140 may be formed between themiddle electrode layer 116 and themold layer 142. The cappinginsulation layer 140 may serve as an adhesion layer for depositing themold layer 142. Also, the cappinginsulation layer 140 may serve as an etch stop layer for etching themold layer 142. Thus, the cappinginsulation layer 140 may be formed of a material having an etching selectivity with respect to themold layer 142. The cappinginsulation layer 140 may include, e.g., silicon nitride. In some example embodiments, the cappinginsulation layer 140 may not be formed. - The
mold layer 142 may include a spin-on hard mask (SOH). The firsthard mask layer 144 may serve as an etching mask in the etching themold layer 142. Thus, the firsthard mask layer 144 may be formed of a material having an etching selectivity with respect to themold layer 142. In some example embodiments, the firsthard mask layer 144 may be formed of, e.g., silicon oxynitride or silicon nitride. - Referring to
FIG. 12 , the firsthard mask layer 144 may be patterned by a photolithography process to form a firsthard mask 144 a. The firsthard mask 144 a may include an opening at a portion for forming theupper electrode 128 a. - The
mold layer 142 and thecapping insulation layer 140 may be etched using the firsthard mask 144 a to form amold pattern 142 a and acapping insulation pattern 140 a, respectively. Themold pattern 142 a and thecapping insulation pattern 140 a may include asecond opening 146 exposing an upper surface of theMTJ layer 114. - Referring to
FIG. 13 , aspacer layer 148 may be conformally formed on an inner wall of thesecond opening 146, the exposed upper surface of theMTJ layer 114, and an upper surface of the firsthard mask 144 a. - The
spacer layer 148 may serve as an adhesion layer for forming the first protective layer 150 (refer toFIG. 15 ). In some example embodiments, thespacer layer 148 may be formed of, e.g., silicon oxide. Thespacer layer 148 may be formed by a CVD process or an ALD process. - Referring to
FIG. 14 , thespacer layer 148 may be anisotropically etched to form aspacer 148 a on a sidewall of thesecond opening 146. Thus, themiddle electrode layer 116 may be exposed by thesecond opening 146. - Referring to
FIG. 15 , the firstprotective layer 150 may be conformally formed on the firsthard mask 144 a, thespacer 148 a and themiddle electrode layer 116. Anupper electrode layer 152 may be formed on the firstprotective layer 150 to fill thesecond opening 146. - The first
protective layer 150 and theupper electrode layer 152 may be formed by processes substantially the same as or similar to those illustrated with reference toFIG. 4 . That is, the firstprotective layer 150 may have a metal having a specific gravity less than a specific gravity of theupper electrode layer 152. The firstprotective layer 150 may include a conductive material having a resistance lower than a resistance of each of the firstprotective layer 150 and themiddle electrode layer 116. - Referring to
FIG. 16 , portions of the firstprotective layer 150 and theupper electrode layer 152 on the firsthard mask 144 a may be removed. Portions of the firstprotective layer 150 and theupper electrode layer 152 in thesecond opening 146 may be partially etched to form a firstprotective pattern 150 a and anupper electrode 152 a, respectively, filling a lower portion of thesecond opening 146. The firstprotective pattern 150 a may surround a sidewall 152-2 and a bottom surface 152-3 of theupper electrode 152 a. The processes may be substantially the same as or similar to those illustrated with reference toFIG. 5 . - Referring to
FIG. 17 , a secondprotective pattern 154 may be formed on theupper electrode 152 a and the firstprotective pattern 150 a. The secondprotective pattern 154 may be formed by processes substantially the same as or similar to those illustrated with reference toFIGS. 6 and 7 . Thus, the first and secondprotective patterns protective structure 155. - Referring to
FIG. 18 , themold pattern 142 a may be removed. - In some example embodiments, when the
mold pattern 142 a includes SOH, themold pattern 142 a may be removed by an ashing process. - Referring to
FIG. 19 , the cappinginsulation pattern 140 a may be etched using theupper electrode 152 a and the upper electrodeprotective structure 155 using an etching mask. Themiddle electrode layer 116, theMTJ layer 114 and thelower electrode layer 112 may be sequentially etched by a first etching process to form thelower electrode 112 a, theMTJ structure 115 and themiddle electrode 116 a on thelower electrode contact 110. The first etching process may be substantially the same as or similar to that illustrated with reference toFIG. 9 . Thus, a conductive by-product may be re-deposited on a sidewall of theMTJ structure 115, and thus aconductive pattern 156 may be formed on the sidewall of theMTJ structure 115. - Referring to
FIGS. 20 and 21 , theconductive pattern 156 on the sidewall of theMTJ structure 115 may be removed by a second etching process. The second etching process may be substantially the same as or similar to that illustrated with reference toFIG. 10 . During the second etching process, the first insulatinginterlayer 102 between thelower electrodes 112 a may be partially etched by a predetermined thickness. - As shown in
FIG. 20 , during the second etching process, thespacer 148 a may be completely removed. However, after the second etching process, the upper electrodeprotective structure 155 may remain and cover the surface of theupper electrode 152 a. - A semiconductor device shown in
FIG. 20 may be substantially the same the semiconductor device shown inFIG. 10 . - In some example embodiments, as shown in
FIG. 21 , after the second etching process, thespacer 148 a may remain. - A semiconductor device shown in
FIG. 21 may include thespacer 148 a on the sidewall of the upper electrodeprotective structure 155. Thus, a lower surface of the upper electrodeprotective structure 155 may be greater than an upper surface of themiddle electrode 116 a. -
FIG. 22 ,FIG. 23 ,FIG. 24 ,FIG. 25 ,FIG. 26 ,FIG. 27 , andFIG. 28 are cross-sectional views illustrating stages of a method of manufacturing an MRAM device according to some example embodiments. - Referring to
FIG. 22 , the first insulatinginterlayer 102 may be formed on thesubstrate 100. Thelower electrode contact 110 may be formed through the first insulatinginterlayer 102. The first insulatinginterlayer 102 and thelower electrode contact 110 may be formed by processes substantially the same as or similar to those illustrated with reference toFIG. 1 . - The
lower electrode layer 112, theMTJ layer 114 and themiddle electrode layer 116 may be sequentially formed on the first insulatinginterlayer 102 and thelower electrode contact 110. Anupper electrode layer 160 and a firsthard mask layer 162 may be sequentially formed on themiddle electrode layer 116. - The
lower electrode layer 112, theMTJ layer 114 and themiddle electrode layer 116 may be formed by processes substantially the same as or similar to those illustrated with reference toFIG. 2 . Themiddle electrode layer 116 may be formed of a material having a specific gravity less than that of a material of theupper electrode layer 160. Themiddle electrode layer 116 may be formed of a metal nitride, e.g., tantalum nitride, titanium nitride, etc., or a metal, e.g., tantalum, titanium, etc. - The
upper electrode layer 160 may be formed of a conductive material having a resistance lower than a resistance of themiddle electrode layer 116. Theupper electrode layer 160 may be formed of a metal having a specific gravity greater than about 5.0. In some example embodiments, theupper electrode layer 160 may be formed of e.g., tungsten, copper, platinum, nickel, silver, gold, etc. For example, theupper electrode layer 160 may be formed of tungsten. - The first
hard mask layer 162 may serve as an etching mask for etching theupper electrode layer 160. The firsthard mask layer 162 may be formed of an oxide, e.g., silicon oxide. When the firsthard mask layer 162 is formed, an oxygen source gas may be provided so that a firstinterface oxide layer 164 may be formed on a surface of theupper electrode layer 160. When theupper electrode layer 160 is formed of tungsten, the firstinterface oxide layer 164 may include tungsten oxide. - Referring to
FIG. 23 , the firsthard mask layer 162 may be patterned by a photolithography process to form a firsthard mask 162 a. - The first
interface oxide layer 164 and theupper electrode layer 160 may be anisotropically etched using the firsthard mask 162 a as an etching mask to form a firstinterface oxide pattern 164 a and theupper electrode 160 a, respectively. An isotropic etching process may include an RIE process. - A
spacer layer 172 may be conformally formed on surfaces of theupper electrode 160 a, the firsthard mask 162 a and themiddle electrode layer 116. Thespacer layer 172 may be formed of an insulation material including oxygen, e.g., silicon oxide. Thespacer layer 172 may be formed by a CVD process or an ALD process. - When the
spacer layer 172 is formed, oxygen gas serving as a deposition source gas may be reacted with a sidewall of theupper electrode 160 a to form a secondinterface oxide pattern 168 a on the sidewall of theupper electrode 160 a. When theupper electrode 160 a includes tungsten, the secondinterface oxide pattern 168 a may include tungsten oxide. Thus, the first and secondinterface oxide patterns upper electrode 160 a. The first and secondinterface oxide patterns - Referring to
FIG. 24 , thespacer layer 172 may be anisotropically etched to form aspacer 172 a on sidewalls of the secondinterface oxide pattern 168 a and the firsthard mask 162 a. Thus, a surface of themiddle electrode layer 116 may be exposed between thespacers 172 a. - In some example embodiments, the etching process of the
spacer layer 172 may include, e.g., an IBE process or an RIE process. - Referring to
FIG. 25 , themiddle electrode layer 116 between thespacers 172 a may be etched to form amiddle electrode 116 a. During etching themiddle electrode layer 116, a conductive by-product may be generated. The conductive by-product may be re-deposited on a sidewall of thespacer 172 a, and thus a firstconductive pattern 174 may be formed on the sidewall of thespacer 172 a. - In some example embodiments, a first etching process for etching the
middle electrode layer 116 may include a physical etching process, e.g., an ion beam etching (IBE) process. In some example embodiments, the first etching process may include argon ion sputtering process. A first incident angle of the ion beam incident on thesubstrate 100 may be about 80 to about 90 degrees, so that the firstconductive pattern 174 may be sufficiently formed in the first etching process. - The first
conductive pattern 174 may include a metal included in themiddle electrode layer 116. - Thus, the first
conductive pattern 174, thespacer 172 a and the firsthard mask 162 a may cover a surface of theupper electrode 160 a. Thus, the surface of theupper electrode 160 a may not be exposed. The firstconductive pattern 174, thespacer 172 a and the firsthard mask 162 a may serve as an upper electrode protective structure in a subsequent process. - Referring to
FIG. 26 , theMTJ layer 114 and thelower electrode layer 112 may be sequentially etched using a structure on the MTJ layer as an etching mask. Thus, thelower electrode 112 a and theMTJ structure 115 may be formed on theelectrode contact 110. - In some example embodiments, a second etching process for forming the
lower electrode 112 a and theMTJ structure 115 may include a physical etching process, e.g., an ion beam etching (IBE) process. In the second etching process, a second incident angle of an ion beam incident on thesubstrate 100 may be equal to or lower than the first incident angle. In some example embodiments, the second incident angle may be about 50 degrees to about 80 degrees. - When the second etching process is performed, a conductive by-product including materials included in etch target layers may be generated. The conductive by-product may be re-deposited on a sidewall of the
MTJ structure 115, and thus a secondconductive pattern 176 may be formed on the sidewall of theMTJ structure 115. - When the second etching process is performed, the first
hard mask 162 a may be etched by a predetermined thickness, and the firstconductive pattern 174 may be partially or completely etched. However, after the second etching process, the surface of theupper electrode 160 a may be covered with the firsthard mask 162 a and the firstconductive pattern 174. In some example embodiments, after the second etching process, the surface of theupper electrode 160 a may be covered with the firsthard mask 162 a and thespacer 172 a. - The
upper electrode 160 a may not be etched by the second etching process. Thus, the by-product may not include a metal included in theupper electrode 160 a having a specific gravity equal to or greater than about 5.0. - Referring to
FIGS. 27 and 28 , the secondconductive pattern 176 on the sidewall of theMTJ structure 115 may be removed by a third etching process. - In some example embodiments, the third etching process may include a physical etching process, e.g., an ion beam etching (IBE) process. In the third etching process, a third incident angle of an ion beam incident on the
substrate 100 may be less than the second incident angle. The third angle may be about 20 degrees to about 40 degrees. The first, second and third etching processes may be performed in-situ. - In some example embodiments, as shown in
FIG. 27 , in the third etching process, a portion of the firsthard mask 162 a and the firstconductive pattern 174 may be removed. In this case, the firsthard mask 162 a, thespacer 172 a and the first and secondinterface oxide patterns upper electrode 160 a. Thus, theupper electrode 160 a may not be exposed during the third etching process. That is, the firsthard mask 162 a, thespacer 172 a and the first and secondinterface oxide patterns - In some example embodiments, as shown in
FIG. 28 , in the third etching process, the firsthard mask 162 a, the firstconductive pattern 174 and thespacer 172 a may be completely removed. In this case, the first and secondinterface oxide patterns upper electrode 160 a. Thus, theupper electrode 160 a may not be exposed during the third etching process. That is, the first and secondinterface oxide patterns - The second
conductive pattern 176 may be easily removed by the third etching process. Thus, an electrical short between first and second magnetic patterns 155 a and 155 c in theMTJ structure 115 may decrease. During the third etching process, theupper electrode 160 a may not be exposed, so that by-products may not include a metal having a specific gravity equal to or greater than about 5.0. Thus, the by-products may not be re-deposited, and may be removed by the third etching process. - As described above, the semiconductor device shown in
FIG. 27 orFIG. 28 may be manufactured. - Referring to
FIGS. 27 and 28 , the semiconductor device may include the first insulatinginterlayer 102 and thelower electrode contact 110 extending through the first insulatinginterlayer 102 on thesubstrate 100. A stacked structure including thelower electrode 112 a, theMTJ structure 115 and themiddle electrode 116 a may be formed on thelower electrode contact 110. Theupper electrode 160 a and the upper electrode protective structure surrounding theupper electrode 160 a may be formed on the stacked structure. The upper electrode protective structure may include at least the first andsecond oxide patterns upper electrode 160 a. -
FIG. 29 ,FIG. 30 ,FIG. 31 , andFIG. 32 are cross-sectional views illustrating stages of a method of manufacturing an MRAM device according to some example embodiments. - Referring to
FIG. 29 , anisolation layer 202 may be formed on asubstrate 200, and thus an active region and a field region may be defined in thesubstrate 200. Theisolation layer 202 may be formed by a shallow trench isolation (STI) process. A plurality of active regions may be spaced apart from each other, and may be regularly arranged. - A plurality of
transistors 216 may be formed on thesubstrate 200. - In some example embodiments, a mask (not shown) may be formed on the
substrate 200. Thesubstrate 200 may be etched using the mask to form a plurality oftrenches 204 extending in a first direction. Each of the active regions may include twotrenches 204 thereon. A gate structure may be formed to fill each of thetrenches 204, and the gate structure may include agate insulation pattern 206, agate electrode 208, and ahard mask 210 sequentially stacked. Impurities may be doped into portions of the active region adjacent the gate structure to form asource region 212 and adrain region 214. Thesource region 212 may be commonly used in adjacent two transistors. Thus, a buried gate type transistor may be formed on thesubstrate 200. - Referring to
FIG. 30 , a first lower insulatinginterlayer 230 a may be formed on thesubstrate 200. The first lower insulatinginterlayer 230 a may be partially etched to form a first opening (not shown) exposing thesource region 212. A conductive layer may be formed to fill the first opening, and the conductive layer may be planarized to form asource line 232 contacting thesource region 212. - A second lower insulating
interlayer 230 b may be formed on the first lower insulatinginterlayer 230 a and thesource line 232. - A second opening (not shown) exposing the
drain region 214 may be formed through the first and second lower insulatinginterlayers contact plug 234 contacting thedrain region 214. - Referring to
FIG. 31 , a third lower insulatinginterlayer 238 may be formed on the second lower insulatinginterlayer 230 b. Afirst wiring structure 236 may be formed on thecontact plug 234 through the third lower insulatinginterlayer 238. Anetch stop layer 240 may be formed on the third lower insulatinginterlayer 238 and thefirst wiring structure 236. - The third lower insulating
interlayer 238 may be formed by a CVD process, an ALD process or a spin coating process. - The
first wiring structure 236 may include abarrier layer 236 a and ametal pattern 236 b. - In some example embodiments, the
first wiring structure 236 may be formed by a dual damascene process or a single damascene process. In this case, themetal pattern 236 b may include, e.g., copper. In some example embodiments, thefirst wiring structure 236 may be formed by a photolithography process. In this case, themetal pattern 236 b may include, e.g., tungsten, aluminum, etc. - In some example embodiments, the
etch stop layer 240 may be formed of, e.g., silicon nitride or silicon oxynitride by a CVD process or an ALD process. - Referring to
FIG. 32 , processes substantially the same as or similar to those illustrated with reference toFIGS. 1 to 10 may be performed to form a structure shown inFIG. 10 on thefirst wiring structure 236. - That is, the first insulating
interlayer 102 and thelower electrode contact 110 extending through the first insulatinginterlayer 102 may be formed on theetch stop layer 240. In some example embodiments, thelower electrode contact 110 may contact thefirst wiring structure 236. - Also, a stacked structure including the
lower electrode 112 a, theMTJ structure 115 and themiddle electrode 116 a may be formed on thelower electrode contact 110. Theupper electrode 128 a and the upper electrodeprotective structure 130 surrounding a surface of theupper electrode 128 a may be formed on the stacked structure. The upper electrodeprotective structure 130 may include the firstprotective pattern 126 a on a sidewall and a lower surface of theupper electrode 128 a and the secondprotective pattern 132 a covering an upper surface of theupper electrode 128 a. - In some example embodiments, processes substantially the same as or similar to those illustrated with reference to
FIGS. 11 to 21 may be performed to form a structure shown inFIG. 20 or 21 on thefirst wiring structure 236. - In some example embodiments, processes substantially the same as or similar to those illustrated with reference to
FIGS. 22 to 28 may be performed to form a structure shown inFIG. 27 or 28 on thefirst wiring structure 236. - Then, a second insulating
interlayer 242 may be formed on the first insulatinginterlayer 102 to fill a gap (not shown) between structures each including theupper electrodes 128 a and the upper electrodeprotective structure 130. In some example embodiments, an upper surface of the second insulatinginterlayer 242 may be planarized. - The second
insulating interlayer 242 may be etched to form a trench (not shown) for forming abit line 250. The trench may extend in a second direction substantially perpendicular to the first direction. In some example embodiments, when the upper electrode protective structure has conductivity, theupper electrode 128 a or the upper electrodeprotective structure 130 may be exposed by the trench. In some example embodiments, when the upper electrode structure has non-conductivity, theupper electrode 128 a may be exposed by the trench. - The
bit line 250 may be formed to fill the trench. Thebit line 250 may be formed by forming a barrier layer on an inner wall of the trench, forming a metal layer on the barrier layer to fill the trench, and planarizing the metal layer and the barrier layer. Thebit line 250 may include abarrier pattern 250 a and ametal pattern 250 b, and may be electrically connected with theupper electrode 128 a. - Then, an upper insulating interlayer (not shown) may be further formed on the
bit line 250. - The MRAM device according to some example embodiments may be used in a memory device included in an electronic product such as a mobile device, a memory card, and a computer.
-
FIG. 33 is a diagram illustrating anelectronic device 3300 according to some example embodiments. - Referring to
FIG. 33 , theelectronic device 3300 includes amemory 3320, aprocessor 3330, auser interface 3340, and acommunication interface 3350. - The
electronic device 3300 may be included in one or more various electronic devices. In some example embodiments, theelectronic device 3300 may include a computing device. A computing device may include a personal computer (PC), a tablet computer, a laptop computer, a netbook, some combination thereof, or the like. Thememory 3320, theprocessor 3330, theuser interface 3340, and thecommunication interface 3350 may communicate with one another through abus 3310. - In some example embodiments, the
electronic device 3300 may be manufactured to include one or more of the MRAM devices included herein with regard to any of the example embodiments of MRAM devices included herein. - The
communication interface 3350 may communicate data from an external device using various Internet protocols. The external device may include, for example, a computing device. - The
processor 3330 may execute a program and control theelectronic device 3300. A program code to be executed by theprocessor 3330 may be stored in thememory 3320. An electronic system may be connected to an external device through an input/output device (not shown) and exchange data with the external device. - The
memory 3320 may store information. Thememory 3320 may be a volatile or a nonvolatile memory. The memory may be a magnetic memory device (e.g., an MRAM) according to any of the example embodiments of MRAM devices included herein. Thememory 3320 may be a non-transitory computer readable storage medium. The memory may store computer-readable instructions that, when executed, cause the execution of one or more methods, functions, processes, etc. as described herein. In some example embodiments, theprocessor 3330 may execute one or more of the computer-readable instructions stored at thememory 3320. - In some example embodiments, the
communication interface 3350 may include a USB and/or HDMI interface. In some example embodiments, thecommunication interface 3350 may include a wireless communication interface. - In some example embodiments, an
electronic device 3300 may be configured to implement some or all of the operations described and illustrated herein. In some example embodiments, theelectronic device 3300 may be configured to at least partially fabricate (“form,” “manufacture,” etc.) an MRAM device and/or electronic device according to any of the example embodiments included herein. - The foregoing is illustrative of example embodiments and is not to be construed as limiting thereof. Although a few example embodiments have been described, those skilled in the art will readily appreciate that many modifications are possible in the example embodiments without materially departing from the novel teachings and advantages of the present inventive concept. Accordingly, all such modifications are intended to be included within the scope of the present inventive concept as defined in the claims. In the claims, means-plus-function clauses are intended to cover the structures described herein as performing the recited function and not only structural equivalents but also equivalent structures. Therefore, it is to be understood that the foregoing is illustrative of various example embodiments and is not to be construed as limited to the specific example embodiments disclosed, and that modifications to the disclosed example embodiments, as well as other example embodiments, are intended to be included within the scope of the appended claims.
Claims (22)
1. A method of manufacturing an MRAM device, the method comprising:
forming an insulating interlayer and a lower electrode contact on a substrate, the lower electrode contact extending through the insulating interlayer;
sequentially forming, on the insulating interlayer and the lower electrode contact, a lower electrode layer, a magnetic tunnel junction layer and a middle electrode layer;
forming an upper electrode on the middle electrode layer;
forming an upper electrode protective structure covering a sidewall of the upper electrode and an upper surface of the upper electrode; and
patterning the middle electrode layer, the magnetic tunnel junction layer and the lower electrode layer according to an etching process, and using the upper electrode and the upper electrode protective structure as an etching mask, to form a middle electrode, a magnetic tunnel junction pattern and a lower electrode, respectively, such that
the upper electrode protective structure isolates the Supper electrode from exposure during the patterning, and
the upper electrode protective structure remains on the upper electrode subsequently to the patterning.
2. The method of claim 1 , wherein the upper electrode includes a metal, the metal having a resistance lower than a resistance of each of the upper electrode protective structure and the middle electrode, the metal having a specific gravity greater than about 5.0.
3. The method of claim 1 , wherein the upper electrode includes tungsten, copper, platinum, nickel, silver or gold.
4. The method of claim 1 , wherein the upper electrode protective structure includes a metal having a specific gravity less than a specific gravity of the upper electrode.
5. The method of claim 1 , wherein the upper electrode protective structure includes a metal having a specific gravity less than about 5.0.
6. The method of claim 1 , wherein the upper electrode protective structure includes titanium or titanium nitride.
7. The method of claim 1 , wherein,
the upper electrode protective structure includes a first protective pattern and a second protective pattern,
the first protective pattern covers the sidewall of the upper electrode and a bottom surface of the upper electrode, and
the second protective pattern covers the upper surface of the upper electrode.
8. The method of claim 1 , further comprising:
oxidizing a surface of the upper electrode, such that the upper electrode protective structure includes a metal oxide.
9-14. (canceled)
15. A method of manufacturing an MRAM device, the method comprising:
forming an insulating interlayer and a lower electrode contact on a substrate, the lower electrode contact extending through the insulating interlayer;
sequentially forming, on the insulating interlayer and the lower electrode contact, a lower electrode layer, a magnetic tunnel junction layer and a middle electrode layer;
forming a mold pattern on the middle electrode layer, the mold pattern including an opening, the opening exposing an upper surface of the middle electrode layer;
forming an upper electrode and an upper electrode protective structure in the opening, the upper electrode protective structure covering a surface of the upper electrode in the opening;
removing the mold pattern; and
patterning the middle electrode layer, the magnetic tunnel junction layer and the lower electrode layer according to an etching process, and using the upper electrode and the upper electrode protective structure as an etching mask, to form a middle electrode, a magnetic tunnel junction pattern and a lower electrode, respectively, such that
the upper electrode protective structure isolates the upper electrode from exposure during the patterning, and
the upper electrode protective structure remains on the upper electrode subsequently to the patterning.
16. The method of claim 15 , wherein forming the upper electrode and the upper electrode protective structure includes,
forming a first protective layer on an upper surface of the mold pattern, a sidewall of the opening and an upper surface of the middle electrode layer;
forming the upper electrode on the first protective layer, such that the upper electrode at least partially fills the opening;
forming a second protective layer on the upper electrode and the first protective layer, such that the upper electrode and the second protective layer collectively fill the opening; and
planarizing the first and second protective layers, such that an upper surface of the mold pattern is exposed to form the upper electrode protective structure, the upper electrode protective structure including a first protective pattern and a second protective pattern.
17. The method of claim 15 , wherein the mold pattern includes silicon oxide.
18. The method of claim 15 , wherein the upper electrode protective structure includes a metal having a specific gravity that is less than a specific gravity of the upper electrode.
19. The method of claim 15 , further comprising:
removing a conductive by-product from a sidewall of the magnetic tunnel junction pattern, subsequently to forming the lower electrode, the magnetic tunnel junction pattern and the middle electrode.
20. The method of claim 19 , wherein,
the removing includes removing an upper portion of a first insulating interlayer, and
the upper electrode protective structure isolates the upper electrode from exposure during the removing, such that the upper electrode protective structure remains on the upper electrode, subsequently to the removing.
21. The method of claim 15 , further comprising:
forming an insulation spacer on a sidewall of the mold pattern, subsequently to forming the mold pattern.
22-35. (canceled)
36. A method, comprising:
forming an upper electrode and an upper electrode protective structure on a magnetic tunnel junction stack, the magnetic tunnel junction stack including a lower electrode layer, a magnetic tunnel junction layer, and a middle electrode layer, the upper electrode protective structure covering at least one surface of a sidewall of the upper electrode and an upper surface of the upper electrode; and
patterning the magnetic tunnel junction stack according to an etching process, using the upper electrode and the upper electrode protective structure as an etching mask, to form a middle electrode, a magnetic tunnel junction pattern and a lower electrode, respectively, such that
the upper electrode protective structure isolates the upper electrode from exposure during the patterning, and
the upper electrode protective structure remains on the upper electrode subsequently to the patterning.
37. The method of claim 36 , further comprising:
manufacturing an MRAM device based on the upper electrode protective structure, the upper electrode, the middle electrode, the magnetic tunnel junction pattern, and the lower electrode, such that the MRAM device includes the upper electrode protective structure, the upper electrode, the middle electrode, the magnetic tunnel junction pattern, and the lower electrode.
38. The method of claim 37 , further comprising:
manufacturing an electronic device based on the MRAM device, such that the electronic device includes the upper electrode protective structure, the upper electrode, the middle electrode, the magnetic tunnel junction pattern, and the lower electrode.
39. The method of claim 36 , wherein,
the magnetic tunnel junction stack further includes a mold pattern on the middle electrode layer, the mold pattern including an opening, the opening exposing an upper surface of the middle electrode layer,
the forming the upper electrode and the upper electrode protective structure on the magnetic tunnel junction stack includes forming the upper electrode and the upper electrode protective structure in the opening, such that the upper electrode protective structure covers a surface of the upper electrode in the opening, and
the method further includes removing the mold pattern, subsequently to forming the upper electrode and the upper electrode protective structure.
40. The method of claim 36 , wherein the forming the upper electrode and the upper electrode protective structure on the magnetic tunnel junction stack includes,
forming a stacked structure on the middle electrode layer, the stacked structure including the upper electrode and a hard mask,
forming the upper electrode protective structure covering the sidewall of the upper electrode and the upper surface of the upper electrode, and
forming an insulation spacer on a sidewall of the stacked structure.
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Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070040198A1 (en) * | 2005-08-17 | 2007-02-22 | Fujitsu Limited | Semiconductor device and manufacturing method thereof, and thin film device |
KR101073132B1 (en) | 2009-07-02 | 2011-10-12 | 주식회사 하이닉스반도체 | Method for manufacturing magnetic tunnel junction device |
JP5214691B2 (en) | 2010-09-17 | 2013-06-19 | 株式会社東芝 | Magnetic memory and manufacturing method thereof |
JP5601181B2 (en) | 2010-12-02 | 2014-10-08 | 富士通セミコンダクター株式会社 | Magnetoresistive element and manufacturing method thereof |
JP2012204431A (en) * | 2011-03-24 | 2012-10-22 | Toshiba Corp | Magnetic random access memory and manufacturing method thereof |
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US9419211B2 (en) | 2012-10-30 | 2016-08-16 | Tokyo Electron Limited | Etching method and substrate processing apparatus |
US9070869B2 (en) | 2013-10-10 | 2015-06-30 | Avalanche Technology, Inc. | Fabrication method for high-density MRAM using thin hard mask |
KR20150075602A (en) | 2013-12-26 | 2015-07-06 | 삼성전자주식회사 | Magnetoresistive random access device and method of manufacturing the same |
JP6199250B2 (en) | 2014-07-25 | 2017-09-20 | 東京エレクトロン株式会社 | Method for processing an object |
KR102259870B1 (en) | 2014-07-30 | 2021-06-04 | 삼성전자주식회사 | Memory device and forming the same |
KR102287755B1 (en) * | 2014-11-18 | 2021-08-09 | 삼성전자주식회사 | Method of Fabricating MRAM |
-
2016
- 2016-12-06 KR KR1020160165181A patent/KR102575405B1/en active IP Right Grant
-
2017
- 2017-05-23 US US15/602,469 patent/US9997566B1/en active Active
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