US20180096950A1 - Radio-frequency device with dual-sided overmold structure - Google Patents
Radio-frequency device with dual-sided overmold structure Download PDFInfo
- Publication number
- US20180096950A1 US20180096950A1 US15/724,735 US201715724735A US2018096950A1 US 20180096950 A1 US20180096950 A1 US 20180096950A1 US 201715724735 A US201715724735 A US 201715724735A US 2018096950 A1 US2018096950 A1 US 2018096950A1
- Authority
- US
- United States
- Prior art keywords
- overmold
- dual
- solder balls
- packaging substrate
- sided
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000000758 substrate Substances 0.000 claims abstract description 197
- 238000004806 packaging method and process Methods 0.000 claims abstract description 121
- 238000000034 method Methods 0.000 claims abstract description 118
- 238000004519 manufacturing process Methods 0.000 claims abstract description 107
- 239000000463 material Substances 0.000 claims description 25
- 229910000679 solder Inorganic materials 0.000 description 263
- 239000010410 layer Substances 0.000 description 62
- 239000004065 semiconductor Substances 0.000 description 18
- 239000000919 ceramic Substances 0.000 description 12
- 239000004020 conductor Substances 0.000 description 12
- 239000002245 particle Substances 0.000 description 12
- 239000012790 adhesive layer Substances 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 238000000926 separation method Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 238000006073 displacement reaction Methods 0.000 description 5
- 239000004576 sand Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000009977 dual effect Effects 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6605—High-frequency electrical connections
- H01L2223/6611—Wire connections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6605—High-frequency electrical connections
- H01L2223/6616—Vertical connections, e.g. vias
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16141—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged on opposite sides of a substrate, e.g. mirror arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48105—Connecting bonding areas at different heights
- H01L2224/48106—Connecting bonding areas at different heights the connector being orthogonal to a side surface of the semiconductor or solid-state body, e.g. parallel layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/4905—Shape
- H01L2224/49051—Connectors having different shapes
- H01L2224/49052—Different loop heights
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73257—Bump and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
- H01L2225/1047—Details of electrical connections between containers
- H01L2225/1058—Bump or bump-like electrical connections, e.g. balls, pillars, posts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
- H01L2225/1047—Details of electrical connections between containers
- H01L2225/107—Indirect electrical connections, e.g. via an interposer, a flexible substrate, using TAB
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
- H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49805—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the leads being also applied on the sidewalls or the bottom of the substrate, e.g. leadless packages for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/105—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L27/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
- H01L2924/141—Analog devices
- H01L2924/142—HF devices
- H01L2924/1421—RF devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
- H01L2924/15321—Connection portion the connection portion being formed on the die mounting surface of the substrate being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19106—Disposition of discrete passive components in a mirrored arrangement on two different side of a common die mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10227—Other objects, e.g. metallic pieces
- H05K2201/10378—Interposers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10621—Components characterised by their electrical contacts
- H05K2201/10734—Ball grid array [BGA]; Bump grid array
Definitions
- the present disclosure generally relates to packaging of circuit devices.
- the present disclosure relates to fabrication of packaged electronic modules such as radio-frequency (RF) modules.
- RF radio-frequency
- RF circuits and related devices can be implemented in a packaged module.
- Such a packaged module can then be mounted on a circuit board such as a phone board.
- the present disclosure relates to a packaged radio-frequency (RF) device.
- the packaged radio-frequency device includes a packaging substrate configured to receive one or more components, the packaging substrate including a first side and a second side.
- the packaged radio-frequency device also includes a shielded package implemented on the first side of the packaging substrate, the shielded package including a first circuit and a first overmold structure, and the shielded package configured to provide radio-frequency shielding for at least a portion of the first circuit.
- the packaged radio-frequency device further includes a set of through-mold connections implemented on the second side of the packaging substrate, the set of through-mold connections defining a mounting volume on the second side of the packaging substrate, a component implemented within the mounting volume and a second overmold structure substantially encapsulating one or more of the component or the set of through-mold connections.
- the set of through-mold connections comprises a metallic material.
- the set of through-mold connections comprises a set of pillars configured to allow the packaged radio-frequency device to be mounted on a circuit board.
- the first and second sides of the packaging substrate correspond to upper and lower sides, respectively, when the packaged radio-frequency device is oriented to be mounted on a circuit board.
- the set of through-mold connections comprises a ball grid array configured to allow the packaged radio-frequency device to be mounted on a circuit board.
- the ball grid array includes a first group of solder balls arranged to partially or fully surround the component mounted on the lower side of the packaging substrate. In some embodiments, the ball grid array further includes a second group of solder balls arranged to partially or fully surrounds the first group of solder balls. In some embodiments, at least some of the first group of solder balls are electrically connected to input and output nodes of the first circuit. In some embodiments, each of the second group of solder balls is electrically connected to a ground plane within the packaging substrate.
- the first group of solder balls forms a rectangular perimeter around the component mounted on the lower side of the packaging substrate. In some embodiments, the second group of solder balls forms a rectangular perimeter around the first group of solder balls.
- the packaging substrate includes a laminate substrate. In some embodiments, the packaging substrate includes a ceramic substrate. In some embodiments, the ceramic substrate includes a low-temperature co-fired ceramic substrate.
- the first overmold structure substantially encapsulates the first circuit.
- the shielded package further includes an upper conductive layer implemented on the first overmold structure, the upper conductive layer electrically connected to a ground plane within the packaging substrate. In some embodiments, the electrical connection between the upper conductive layer and a ground plane is achieved through one or more conductors within the first overmold structure.
- the one or more conductors include shielding wirebonds arranged relative to the first circuit to provide RF shielding functionality for at least a portion of the first circuit.
- the one or more conductors include one or more surface-mount technology devices mounted on the packaging substrate, the one or more surface-mount technology devices arranged relative to the first circuit to provide radio-frequency shielding functionality for at least a portion of the first circuit.
- the electrical connection between the upper conductive layer and a ground plane is achieved through a conformal conductive coating implemented on one or more sides of the first overmold structure.
- the conformal conductive coating extends to corresponding one or more sides of the packaging substrate.
- the packaging substrate includes one or more conductive features each having a portion exposed at the corresponding side of the packaging substrate to form an electrical connection with the conformal conductive coating, each conductive feature further connected to the ground plane within the substrate packaging.
- the upper conductive layer is a conformal conductive layer. In some embodiments, the conformal conductive layer substantially covers all four sides of the first overmold structure and all four sides of the packaging substrate. In some embodiments, the conformal conductive coating is implemented on one or more sides of the first overmold structure. In some embodiments, the conformal conductive layer substantially covers all four sides of the first overmold structure.
- the component includes a surface-mount technology device.
- the surface-mount technology device includes a passive device or an active radio-frequency device.
- the component includes a die.
- the die includes a semiconductor die.
- the semiconductor die is configured to facilitate processing of radio-frequency signals by the first circuit.
- the present disclosure also relates to a wireless device.
- the wireless device includes a circuit board configured to receive a plurality of packaged modules.
- the wireless device further includes a shielded radio-frequency module mounted on the circuit board, the radio-frequency module including a packaging substrate configured to receive a plurality of components, the packaging substrate including a first side and a second side, the radio-frequency module further including a shielded package implemented on the first side of the packaging substrate, the shielded package including a first circuit and a first overmold structure, the shielded package configured to provide radio-frequency shielding for at least a portion of the first circuit, the radio-frequency module further including a set of through-mold connections implemented on the second side of the packaging substrate, the set of through-mold connections defining a mounting volume on the second side of the packaging substrate, the radio-frequency module further including a component implemented within the mounting volume and a second overmold structure substantially encapsulating one or more of the component or the set of through-mold connections.
- the present disclosure also relates to a method for manufacturing packaged radio-frequency (RF) devices.
- the method includes providing a packaging substrate configured to receive a plurality of components, the packaging substrate including a first side and a second side.
- the method further includes forming a shielded package on the first side of the packaging substrate, the shielded package including a first circuit and a first overmold structure, the shielded package configured to provide RF shielding for at least a portion of the first circuit.
- the method further includes mounting a component on the second side of the packaging substrate, and arranging a set of through-mold connections on the second side of the packaging substrate such that the set of through-mold connections is positioned relative to the component.
- the method also includes forming a second overmold structure over the component and the set of through-mold connections and removing a portion of the second overmold structure.
- removing the portion of the second overmold structure comprises ablating the portion of the second overmold structure. In some embodiments, ablating the portion of the second overmold structure exposes the set of through-mold connections through the second overmold structure. In some embodiments, removing the portion of the second overmold structure comprises removing portions of the set of through-mold connections. In some embodiments, removing the portion of the second overmold structure comprises removing a film of overmold material from the set of through-mold connections. In some embodiments, removing the portion of the second overmold structure comprises removing overmold material in areas surrounding the set of through-mold connections.
- the first overmold structure substantially encapsulates the first circuit.
- the set of through-mold connections comprises a metallic material.
- the set of through-mold connections is configured to allow the packaged RF device to be mounted on a circuit board.
- arranging the set of through-mold connections comprises arranging a first group of through-mold connections to partially or fully surround the component mounted on the lower side of the packaging substrate.
- arranging the set of through-mold connections further comprises arranging a second group of through-mold connections to partially or fully surround the first group of through-mold connections.
- the method further includes electrically connecting at least some of the first group of through-mold connections to input and output nodes of the first circuit. In some embodiments, the method further includes electrically connecting at least some of the second group of through-mold connections to a ground plane within the packaging substrate.
- the packaging substrate includes a laminate substrate. In some embodiments, the packaging substrate includes a ceramic substrate. In some embodiments, the ceramic substrate includes a low-temperature co-fired ceramic (LTCC) substrate.
- LTCC low-temperature co-fired ceramic
- the present disclosure also relates to a method for manufacturing packaged radio-frequency (RF) devices.
- the method includes providing a packaging substrate panel an array of units, the packaging substrate panel including a first side and a second side and forming a package on the first side of the packaging substrate panel to yield a packaged panel and such that each unit includes a first circuit and a first overmold structure.
- the method further includes performing at least one processing operation on the second side of the packaging substrate to yield a dual-sided panel, the second side of the packaging substrate including a second component and a second overmold structure.
- the method also includes singulating the dual-sided panel to yield a plurality of individual dual-sided packages and forming a conformal shielding layer for each of the individual dual-sided packages arranged in a frame such that a conformal shielding layer covers an upper surface and at least one side wall of the individual dual-sided package.
- the at least one processing operation on the second side comprises mounting a component for each unit on the second side of the packaging substrate. In some embodiments, the at least one processing operation on the second side further comprises arranging a set of through-mold connections for each unit relative to the component on the second side of the packaging substrate. In some embodiments, the at least one processing operation on the second side further comprises forming the second overmold structure over the component and the set of through-mold connections. In some embodiments, the at least one processing operation on the second side further comprises removing a portion of the second overmold structure.
- removing the portion of the second overmold structure comprises ablating the portion of the second overmold structure. In some embodiments, ablating the portion of the second overmold structure exposes the set of through-mold connections through the second overmold structure. In some embodiments, removing the portion of the second overmold structure comprises removing portions of the set of through-mold connections. In some embodiments, removing the portion of the second overmold structure comprises removing a film of overmold material from the set of through-mold connections. In some embodiments, removing the portion of the second overmold structure comprises removing overmold material in areas surrounding the set of through-mold connections.
- the set of through-mold connections comprises a ball grid array (BGA).
- BGA ball grid array
- the conformal shielding layer covers substantially all of the side walls of the individual dual-sided package.
- each of the individual dual-sided packages is held on the frame by a tape.
- the forming of the conformal shielding layer includes a sputter deposition process.
- the frame has a rectangular shape configured to hold the individual dual-sided packages in a rectangular array.
- the frame has a wafer-like format suitable for the sputter deposition process.
- the individual dual-sided packages are arranged in a selected ring region on the wafer-like frame.
- the present disclosure relates to a method for manufacturing packaged radio-frequency (RF) devices.
- the method includes providing a packaging substrate configured to receive a plurality of components, the packaging substrate including a first side and a second side and forming a shielded package on the first side of the packaging substrate, the shielded package including a first circuit and a first overmold structure, the shielded package configured to provide RF shielding for at least a portion of the first circuit.
- the method further includes mounting a component on the second side of the packaging substrate and forming a second overmold structure over the component.
- the method includes forming a set of cavities in the second overmold structure, the set of cavities positioned relative to the component and forming a set of through-mold connections in the set of cavities in the second overmold structure.
- the shielded package comprises a second overmold structure that substantially encapsulates the first circuit.
- the set of through-mold connections comprises a metallic material.
- the set of through-mold connections is configured to allow the packaged RF device to be mounted on a circuit board.
- forming the set of cavities comprises forming a first group of cavities vias to partially or fully surround the component mounted on the lower side of the packaging substrate. In some embodiments, forming the set of cavities further comprises forming a second group of cavities to partially or fully surround the first group of cavities. In some embodiments, the method further includes electrically connecting at least some of the set of through-mold connections to a ground plane within the packaging substrate. In some embodiments, the method further includes forming additional conductive material on the set of through-mold connections.
- the packaging substrate includes a laminate substrate. In some embodiments, the packaging substrate includes a ceramic substrate. In some embodiments, the ceramic substrate includes a low-temperature co-fired ceramic (LTCC) substrate.
- LTCC low-temperature co-fired ceramic
- the present disclosure also relates to a method for manufacturing packaged radio-frequency (RF) devices.
- the method includes providing a packaging substrate panel an array of units, the packaging substrate panel including a first side and a second side and forming a package on the first side of the packaging substrate panel to yield a packaged panel and such that each unit includes a first circuit and a first overmold structure.
- the method further includes performing at least one processing operation on the second side of the packaging substrate to yield a dual-sided panel, the second side of the packaging substrate including a second component and a second overmold structure and singulating the dual-sided panel to yield a plurality of individual dual-sided packages.
- the method further includes forming a conformal shielding layer for each of the individual dual-sided packages arranged in a frame such that a conformal shielding layer covers an upper surface and at least one side wall of the individual dual-sided package.
- the at least one processing operation on the second side comprises mounting a component for each unit on the second side of the packaging substrate. In some embodiments, the at least one processing operation on the second side further comprises forming a second overmold structure over the component. In some embodiments, the at least one processing operation on the second side further comprises forming a set of cavities in the second overmold structure, the set of cavities positioned relative to the component. In some embodiments, the at least one processing operation on the second side further comprises forming a set of through-mold connections in the set of cavities in the second overmold structure.
- the set of through-mold connections comprises a ball grid array (BGA).
- BGA ball grid array
- the conformal shielding layer covers substantially all of the side walls of the individual dual-sided package.
- each of the individual dual-sided packages is held on the frame by a tape.
- the forming of the conformal shielding layer includes a sputter deposition process.
- the frame has a rectangular shape configured to hold the individual dual-sided packages in a rectangular array.
- the frame has a wafer-like format suitable for the sputter deposition process.
- the individual dual-sided packages are arranged in a selected ring region on the wafer-like frame.
- FIG. 1 illustrates a dual-sided package having a shielded package and a lower component mounted thereto, according to some implementations.
- FIG. 2 illustrates a dual-sided package having a shielded package and one or more lower components mounted within a volume defined on an underside of the shielded package, according to some implementations.
- FIG. 3 illustrates a shielded package as a wire-shielded package, according to some implementations.
- FIG. 4 illustrates a shielded package having a non-wire component that provides electrical connection between an upper conductive layer and a ground plane within a packaging substrate, according to some implementations.
- FIG. 5 illustrates a shielded package having a conformal conductive layer that is electrically connected to a ground plane within a packaging substrate, according to some implementations.
- FIG. 6A illustrates a side view of a dual-sided package, according to some implementations.
- FIG. 6B illustrates an underside view of a dual-sided package, according to some implementations.
- FIG. 6C illustrates a side view of a dual-sided package configured to provide shielding functionality, according to some implementations.
- FIG. 6D illustrates an underside view of a dual-sided package configured to provide shielding functionality, according to some implementations.
- FIG. 7A illustrates a dual-sided package implementing a BGA-mounted device and solder balls, according to some implementations.
- FIG. 7B illustrates a dual-sided package implementing a BGA-mounted device and pillars, according to some implementations.
- FIG. 8A illustrates a dual-sided package implementing a plurality of lower components, according to some implementations.
- FIG. 8B illustrates a dual-sided package implementing a plurality of lower components, according to some implementations.
- FIGS. 9A-9L illustrate various stages of fabrication processes for implementing dual-sided packages, according to some implementations.
- FIGS. 10A-10L illustrate various stages of fabrication processes for implementing dual-sided packages, according to some implementations.
- FIGS. 11A-11M illustrate various stages of fabrication processes for implementing dual-sided packages, according to some implementations.
- FIGS. 12A-12F illustrate various stages of fabrication processes for implementing dual-sided packages, according to some implementations.
- FIGS. 13A-13C illustrate various stages of forming dual-sided packages without conformal shielding, according to some implementations.
- FIGS. 14A-14D illustrate various stages of processing individual packages with a frame carrier, according to some implementations.
- FIG. 15 illustrates a dual-sided package having one or more surface-mount technology devices mounted on a packaging substrate, according to some implementations.
- FIG. 16 illustrates another dual-sided package having one or more surface-mount technology devices mounted on a packaging substrate, according to some implementations.
- FIG. 17 illustrates another dual-sided package having one or more surface-mount technology devices mounted on a packaging substrate, according to some implementations.
- FIG. 18A illustrates a top-down perspective view of an underside of a dual-sided package, according to some implementations.
- FIG. 18B illustrates a top-down perspective view of an underside of a dual-sided package, according to some implementations.
- FIG. 18C illustrates a bottom-up close-up perspective view of a portion of an underside of a dual-sided package, according to some implementations.
- FIG. 19 illustrates a dual-sided package implemented as a diversity receive module, according to some implementations.
- FIG. 20 illustrates a dual-sided package implemented in a wireless device, according to some implementations.
- the present disclosure relates to fabrication of packaged electronic modules such as radio-frequency (RF) modules.
- RF radio-frequency
- RF circuits and related devices can be implemented in a packaged module.
- Such a packaged module can then be mounted on a circuit board such as a phone board.
- FIG. 1 shows a dual-sided package 100 having a shielded package 102 and a lower component 104 mounted thereto.
- a lower side of the shielded package 102 can include a side 103 of a packaging substrate that is to be mounted onto a circuit board such as a phone board.
- the shielded package 102 can include such a packaging substrate and one or more upper components mounted on its upper side (when oriented as shown in FIG. 1 ).
- the dual-side property can include such upper component(s) mounted over the substrate and lower component(s) mounted under the substrate.
- a lower component can include any device that can be mounted on the substrate and/or the circuit board.
- a device can be an active radio-frequency (RF) device or a passive device that facilitates processing of RF signals.
- RF radio-frequency
- a passive device can include a die such as a semiconductor die, an integrated passive device (IPD), a surface-mount technology (SMT) device, and the like.
- the lower component as described herein can be electrically coupled to the one or more upper component through, for example, the substrate.
- FIG. 2 shows that in some embodiments, one or more lower components can be mounted under a shielded package, generally within a volume defined on an underside of the shielded package.
- a set of through-mold connections e.g., one or more through-mold connections
- the set of through-mold connections may define a volume on the underside of the shielded package 102 .
- a volume 108 under a shielded package 102 is shown to be defined by the underside of the shielded package 102 and solder balls 106 of a ball grid array (BGA).
- the BGA may be a set of through-mold connections.
- each solder ball 106 of the BGA may be a through-mold connection in the set of through-mold connections.
- Other examples of through-mold connections include, but are not limited to solder balls, pillars, columns, posts, pedestals, etc.
- the through-mold connections described herein may also be referred to as contact features.
- the solder balls 106 are shown to allow the dual-sided package 100 to be mounted on a circuit board 110 such as a phone board.
- the solder balls 106 can be configured so that when mounted to the circuit board 110 , there is sufficient vertical space between the upper surface of the circuit board 110 and the lower surface of the shielded package 102 for the lower component 104 . As illustrated in FIG. 2 , the volume 108 is at least partially filled with an overmold 105 .
- the overmold 105 substantially encapsulates the lower component 104 .
- at least a portion of the solder balls 106 may be exposed through the overmold 105 . Exposing at least a portion of the solder balls 106 may provide a connection (e.g., an electrical and/or thermal connection) through the overmold 105 .
- the solder balls 106 may provide a connection (e.g., an electrical connection) to the lower component 104 and/or components in the shield package 102 .
- solder (or other conductive material) may be applied to the exposed portion of the solder balls 106 to form a connection (e.g., electrical connection) with the circuit board 110 .
- the overmold 105 may also be referred to as an overmold structure.
- the overmold 105 and/or the solder balls 106 (e.g., the exposed portions of the solder balls 106 ) may form a land grid array (LGA) type/style package.
- LGA land grid array
- a close-up view of the solder ball 106 is also illustrated in FIG. 2 .
- the bottom of the shielded package includes a pad 115 .
- the pad 115 may be a metallic pad (or some other material) that may provide electrical and/or thermal conductivity between the solder ball 106 and components of the shield package 102 and/or the lower component 104 .
- Solder mask 114 may be deposited over portions of the pad 115 to define a location where the solder ball 106 may be formed.
- the solder ball 106 may be formed (e.g., implemented, formed, dropped, etc.) on top of the pad 115 and the solder mask 114 .
- the dual-sided package 100 may be installed on the circuit board 110 using the solder ball 106 .
- the solder ball 106 may be attached to the circuit board 110 (e.g., may be installed, mounted, fixed, etc., to the circuit board 110 ) via connection 116 .
- the connection 116 may include solder material 121 and pad 119 .
- the solder material 121 may be solder material from the solder ball 106 that is deposited/melted onto the pad 119 when the dual-sided package 100 is attached to the circuit board. For example, during a reflow process, heat may be applied to melt at least a portion of the solder ball 106 to form the solder material 121 .
- the solder material 121 may also include additional material that is formed, implemented, deposited, etc., over the solder ball 106 .
- the solder material 121 may include solder material 118 , illustrated in FIGS. 13B and 13C , and discussed in more detail below.
- the pad 119 may be part of the circuit board 110 .
- the pad 119 may provide electrical and/or thermal conductivity between the dual-sided package 100 and other components/circuits attached to the circuit board 110 (not illustrated in the figures).
- the pad 119 may include solder material.
- the overmold 105 has a surface 112 (facing downward toward the circuit board 110 ).
- the surface 112 may not contact (e.g., may not physically touch) the surface 113 of the circuit board 110 .
- a gap 109 is present between the surface 112 and the surface 113 .
- the gap 109 may help protect the lower component 104 from damage when there are linear displacements of the dual-sided package 100 due to flexing or dropping.
- the gap 109 may help protect the lower component 104 from damage as the dual-sided package 100 is installed on the circuit board 100 (e.g., may prevent the lower component 104 from contacting the surface 113 of the circuit board 110 during installation/mounting of the dual-sided package).
- the portion of the overmold material 105 that covers the lower component 104 may provide additional protection from damage when there are linear displacements of the dual-sided package 100 due to flexing or dropping.
- the overmold material 105 may also prevent the lower component 104 from contacting the surface 113 of the circuit board 110 during installation/mounting of the dual-sided package.
- the gap 109 may also allow the dual-sided package to adapt to process/manufacturing variations when the dual-sided package 100 is installed on the circuit board 110 .
- different temperatures may be used to melt the solder ball 106 during installation of the dual-sided package.
- the gap 109 may help ensure that the dual-sided package is properly installed by providing enough distance between the surface 112 (of overmold 105 ) and the surface 113 (of circuit board 110 ) while still allowing the solder material of the solder ball 106 to properly bond with the pad 119 of the circuit board 110 .
- the overmold 105 and/or the gap 109 may prevent the component 104 from contacting the surface 113 (of the circuit board 110 )
- the dual-sided package 100 and/or the component 104 may still operate/function properly even if the component 104 does contact the surface 113 .
- the component 104 may remain undamaged and/or operable even after contacting the surface 113 of the circuit board 110 .
- solder balls and/or a BGA solder balls and/or a BGA
- solder balls and/or a BGA are examples of through-mold connections.
- other types of through-mold connections e.g., pillars, columns, etc., may be used to define a volume on an underside of a shielded package and an overmold may be implemented in the volume (on the underside of the shielded package).
- a through-mold connection (or a set of through-mold connections) may be any structure and/or component that may be used to define a volume on the underside of a shielded package and/or may be used to support the shielded package above a surface.
- FIGS. 3-6 show non-limiting examples of dual-sided packages having BGAs.
- FIGS. 3-5 show examples of configurations of shielded packages that can be utilized.
- FIGS. 6A and 6B show an example of a BGA configuration that can be implemented.
- FIG. 6C and 6D show an example of a pillar based (e.g., post, column) configuration that can be implemented.
- FIG. 3 shows that in some embodiments, the shielded package 102 of FIG. 2 can be a wire-shielded package 120 .
- the wire-shielded package 120 is shown to include a packaging substrate 122 (e.g., a laminate substrate) and a plurality of components mounted thereon.
- a first component 124 is depicted as being mounted on the upper surface of the packaging substrate 122 , and electrical connections between the component 124 and the packaging substrate 122 can be facilitated by, for example, wirebonds 128 .
- a second component 126 is shown to be mounted on the upper surface of the packaging substrate 122 in a die-attach configuration. Electrical connections between the component 126 and the packaging substrate 122 can be facilitated by, for example, die-attach features.
- a plurality of shielding wires 130 are shown to be provided over the packaging substrate 122 .
- Such shielding wires 130 can be electrically connected to a ground plane (not shown) within the packaging substrate 122 .
- the shielding wires 130 as well as the mounted components 124 , 126 are shown to be encapsulated by an overmold 132 .
- the upper surface of the overmold 132 can be configured to expose the upper portions of the shielding wires 130 , and an upper conductive layer 134 can be formed thereon. Accordingly, a combination of the upper conductive layer 134 , the shielding wires 130 , and the ground plane can define a shielded volume or region.
- Such a configuration can be implemented to provide shielding functionality between regions within and outside of the shielded package 120 , and/or between regions that are both within the shielded package 120 . Additional details concerning such shielding can be found in, for example, U.S. Pat. No. 8,373,264 entitled SEMICONDUCTOR PACKAGE WITH INTEGRATED INTERFERENCE SHIELDING AND METHOD OF MANUFACTURE THEREOF which is expressly incorporated by reference in its entirety for all purposes.
- an array of solder balls 106 is shown to be implemented on the underside of the packaging substrate 122 so as to define an underside volume.
- a lower component 104 is shown to be mounted within such an underside volume to thereby form a dual-sided package 100 .
- An overmold 105 may be formed and/or implemented in the underside volume (where the lower component 104 is located) formed by the solder balls 106 (e.g., formed by a set of through-mold connections, such as a BGA).
- the overmold 105 may encapsulate at least a portion of the lower component 104 .
- the overmold 105 may fully or partially encapsulate the lower component 104 .
- the overmold 105 may encapsulate at least a portion of the solder balls 106 (e.g., through-mold connections). For example, the overmold 105 may fully or partially encapsulate the solder balls 106 .
- the dual-sided package 100 is shown to be mounted on a circuit board 110 such as a phone board.
- the overmold 105 and/or the solder balls 106 e.g., the exposed portions of the solder balls 106
- the solder balls 106 may have a semicircular shape.
- the bottom portion of the solder balls 106 may be removed to form the semicircular shape.
- the semicircular shape of the solder balls 106 may be formed during a manufacturing process, as discussed in more detail below.
- the dual-sided package 100 may be attached to the circuit board 110 via connections 116 .
- a close-up view of the solder balls 106 and the connections 116 , and additional details (of the solder balls 106 and the connections 116 ) are illustrated/discussed above in conjunction with FIG. 2 .
- a gap 109 is present between the surface 112 and the surface 113 of the circuit board 110 .
- the gap 109 may help protect the lower component 104 from damage when there are linear displacements of the dual-sided package 100 due to flexing or dropping, as discussed above.
- the gap 109 may also allow the dual-sided package to adapt to process/manufacturing variations when the dual-sided package 100 is installed on the circuit board 110 , as discussed above.
- FIG. 4 shows that in some embodiments, the shielded package 102 of FIG. 2 can be a shielded package 140 having a non-wire component 150 that provides electrical connection between an upper conductive layer 154 and a ground plane (not shown) within a packaging substrate 142 (e.g., a laminate substrate).
- the packaging substrate 142 is shown to have a plurality of components mounted thereon.
- a first component 144 is depicted as being mounted on the upper surface of the packaging substrate 142 , and electrical connections between the component 144 and the packaging substrate 142 can be facilitated by, for example, wirebonds 148 .
- a second component 146 is shown to be mounted on the upper surface of the packaging substrate 142 in a die-attach configuration. Electrical connections between the component 146 and the packaging substrate 142 can be facilitated by, for example, die-attach features.
- the component 150 is shown to provide an electrical connection between the upper conductive layer 154 and the ground plane (not shown) within the packaging substrate 142 .
- the component 150 as well as the mounted components 144 , 146 are shown to be encapsulated by an overmold 152 .
- the upper surface of the overmold 152 can be configured to expose the upper portion of the component 150 , and the upper conductive layer 154 can cover such an exposed portion as well as the remaining upper surface of the overmold 152 . Accordingly, a combination of the upper conductive layer 154 , the component 150 , and the ground plane can define a shielded volume or region.
- Such a configuration can be implemented to provide shielding functionality between regions within and outside of the shielded package 140 , and/or between regions that are both within the shielded package 140 . Additional details concerning such shielding can be found in, for example, U.S. patent application Ser. No. 14/252,719 filed on Apr. 14, 2014, entitled APPARATUS AND METHODS RELATED TO CONFORMAL COATING IMPLEMENTED WITH SURFACE MOUNT DEVICES, which is expressly incorporated by reference in its entirety.
- an array of solder balls 106 is shown to be implemented on the underside of the packaging substrate 142 so as to define an underside volume.
- a lower component 104 is shown to be mounted within such an underside volume to thereby form a dual-sided package 100 .
- An overmold 105 may be formed and/or implemented in the underside volume (where the lower component 104 is located) formed by the solder balls 106 (e.g., formed by a set of through-mold connections, such as a BGA).
- the overmold 105 may encapsulate at least a portion of the lower component 104 .
- the overmold 105 may fully or partially encapsulate the lower component 104 .
- the overmold 105 may encapsulate at least a portion of the solder balls 106 (e.g., through-mold connections). For example, the overmold 105 may fully or partially encapsulate the solder balls 106 .
- the dual-sided package 100 is shown to be mounted on a circuit board 110 such as a phone board.
- the overmold 105 and/or the solder balls 106 e.g., the exposed portions of the solder balls 106
- the solder balls 106 may have a semicircular shape.
- the bottom portion of the solder balls 106 may be removed to form the semicircular shape.
- the semicircular shape of the solder balls 106 may be formed during a manufacturing process, as discussed in more detail below.
- the dual-sided package 100 may be attached to the circuit board 110 via connections 116 .
- a close-up view of the solder balls 106 and the connections 116 , and additional details (of the solder balls 106 and the connections 116 ) are illustrated/discussed above in conjunction with FIG. 2 .
- a gap 109 is present between the surface 112 and the surface 113 of the circuit board 110 .
- the gap 109 may help protect the lower component 104 from damage when there are linear displacements of the dual-sided package 100 due to flexing or dropping, as discussed above.
- the gap 109 may also allow the dual-sided package to adapt to process/manufacturing variations when the dual-sided package 100 is installed on the circuit board 110 , as discussed above.
- FIG. 5 shows that in some embodiments, the shielded package 102 of FIG. 2 can be a shielded package 160 having a conformal conductive layer 174 that is electrically connected to a ground plane (not shown) within a packaging substrate 162 (e.g., a laminate substrate or a ceramic substrate).
- the packaging substrate 162 is shown to have a plurality of components mounted thereon.
- a first component 164 is depicted as being mounted on the upper surface of the packaging substrate 162 , and electrical connections between the component 164 and the packaging substrate 162 can be facilitated by, for example, wirebonds 168 .
- a second component 166 is shown to be mounted on the upper surface of the packaging substrate 162 in a die-attach configuration. Electrical connections between the component 166 and the packaging substrate 162 can be facilitated by, for example, die-attach features.
- the mounted components 164 , 166 are shown to be encapsulated by an overmold 172 .
- the conformal conductive layer 174 is shown to generally cover the upper surface of the overmold 172 , as well as side walls (e.g., all four side walls) defined by the sides of the overmold 172 and the packaging substrate 162 .
- the packaging substrate 162 is shown to include conductive features 170 having portions exposed on the sides of the packaging substrate, and also electrically connected to the ground plane (not shown), to thereby provide electrical connections between the conformal conductive layer 174 and the ground plane. Accordingly, a combination of the conformal conductive layer 174 and the ground plane can define a shielded volume or region.
- Such a configuration can be implemented to provide shielding functionality on one or more sides of the shielded package 160 . Additional details concerning such shielding can be found in, for example, U.S. patent application Ser. No. 14/528,447 filed on Oct. 30, 2014, entitled DEVICES AND METHODS RELATED TO PACKAGING OF RADIO-FREQUENCY DEVICES ON CERAMIC SUBSTRATES, which is also expressly incorporated by reference in its entirety for all purposes.
- the overmold 172 may not be present (e.g., the overmold 172 may be optional).
- the packaging substrate 162 is a ceramic substrate, the overmold 172 may not be present.
- an array of solder balls 106 is shown to be implemented on the underside of the packaging substrate 162 so as to define an underside volume.
- a lower component 104 is shown to be mounted within such an underside volume to thereby form a dual-sided package 100 .
- An overmold 105 may be formed and/or implemented in the underside volume (where the lower component 104 is located) formed by the solder balls 106 (e.g., formed by a set of through-mold connections, such as a BGA).
- the overmold 105 may encapsulate at least a portion of the lower component 104 .
- the overmold 105 may fully or partially encapsulate the lower component 104 .
- the overmold 105 may encapsulate at least a portion of the solder balls 106 (e.g., through-mold connections). For example, the overmold 105 may fully or partially encapsulate the solder balls 106 .
- the dual-sided package 100 is shown to be mounted on a circuit board 110 such as a phone board.
- the overmold 105 and/or the solder balls 106 e.g., the exposed portions of the solder balls 106
- the solder balls 106 may have a semicircular shape.
- the bottom portion of the solder balls 106 may be removed to form the semicircular shape.
- the semicircular shape of the solder balls 106 may be formed during a manufacturing process, as discussed in more detail below.
- the dual-sided package 100 may be attached to the circuit board 110 via connections 116 .
- a close-up view of the solder balls 106 and the connections 116 , and additional details (of the solder balls 106 and the connections 116 ) are illustrated/discussed above in conjunction with FIG. 2 .
- a gap 109 is present between the surface 112 and the surface 113 of the circuit board 110 .
- the gap 109 may help protect the lower component 104 from damage when there are linear displacements of the dual-sided package 100 due to flexing or dropping, as discussed above.
- the gap 109 may also allow the dual-sided package to adapt to process/manufacturing variations when the dual-sided package 100 is installed on the circuit board 110 , as discussed above.
- solder balls 106 are depicted as being implemented in a single row that forms a perimeter at an underside of the shielded package. If such solder balls are utilized as input and/or output for processing of radio-frequency (RF) signals, it may be desirable to provide shielding between such input/output solder balls and locations outside of the dual-sided package 100 .
- any of the shielding features of FIGS. 3, 4 , and/or 5 may be combined. For example, two or more of the shielding wires 130 illustrated in FIG. 3 , the component 150 illustrated in FIG. 4 , and the conformal conductive layer 174 illustrated in FIG. 5 , may be combined.
- FIGS. 6A and 6B show side and underside views of a dual-sided package 100 configured to provide such shielding functionality.
- two rows of solder balls can be implemented.
- the inner row of solder balls 106 a can be utilized for input and/or output of RF signals, or for any other input/output where shielding is desired.
- the outer row of solder balls 106 b can be utilized for, for example, grounding of the dual-sided package 100 , and can be electrically connected to the ground plane of the shielded package 102 . Accordingly, the outer row of solder balls 106 b can provide shielding for the inner row of solder balls 106 a.
- the outer row of solder balls 106 b can also provide shielding for the lower component 104 .
- each of the inner and outer rows of solder balls 106 a, 106 b is shown to form a full perimeter on the underside of the shielded package 102 .
- either or both of the inner and outer rows of solder balls 106 a, 106 b can form partial perimeter(s) as needed or desired to achieve desired functionalities.
- a full perimeter of the outer row of solder balls 106 b may not be needed.
- one or more sides of outer row of solder balls 106 b can be implemented to provide such shielding functionality.
- input/output connections may not need a full perimeter of inner row of solder balls 106 a. Accordingly, the inner row of solder balls 106 a can form a partial perimeter on the underside of the shielded package 102 .
- FIGS. 6A and 6B may illustrate views of the dual-sided package 100 before the overmold (e.g., overmold 105 illustrated in FIG. 2 ) is implemented and/or formed on the underside of the shielded package 102 .
- FIGS. 6C and 6D show side and underside views of a dual-sided package 100 configured to provide such shielding functionality.
- two rows of pillars e.g., columns, posts, etc.
- the inner row of pillars 111 a can be utilized for input and/or output of RF signals, or for any other input/output where shielding is desired.
- the outer row of pillars 111 b can be utilized for, for example, grounding of the dual-sided package 100 , and can be electrically connected to the ground plane of the shielded package 102 . Accordingly, the outer row of pillars 111 b can provide shielding for the inner row of pillars 111 a.
- the outer row of pillars 111 b can also provide shielding for the lower component 104 .
- each of the inner and outer rows of pillars 111 a, 111 b is shown to form a full perimeter on the underside of the shielded package 102 .
- either or both of the inner and outer rows of pillars 111 a, 111 b can form partial perimeter(s) as needed or desired to achieve desired functionalities.
- a full perimeter of the outer row of pillars 111 b may not be needed.
- one or more sides of outer row of pillars 111 b can be implemented to provide such shielding functionality.
- input/output connections may not need a full perimeter of inner row of pillars 111 a. Accordingly, the inner row of pillars 111 a can form a partial perimeter on the underside of the shielded package 102 .
- FIGS. 6C and 6D may illustrate views of the dual-sided package 100 before the overmold (e.g., overmold 105 illustrated in FIG. 2 ) is implemented and/or formed on the underside of the shielded package 102 .
- FIG. 7A illustrates a dual-sided package 100 that is similar to the BGA-based example of FIG. 2 .
- An overmold 105 may be formed and/or implemented in the underside volume (where the lower component 104 is located) formed by the solder balls (e.g., formed by a set of through-mold connections, such as a BGA).
- the overmold 105 may encapsulate at least a portion of the lower component 104 .
- the overmold 105 may fully or partially encapsulate the lower component 104 .
- the overmold 105 may encapsulate at least a portion of the solder balls (e.g., through-mold connections).
- the overmold 105 may fully or partially encapsulate the solder balls.
- the overmold 105 and/or the solder balls 106 e.g., the exposed portions of the solder balls 106
- LGA land grid array
- the solder balls 106 may have a semicircular shape.
- the bottom portion (e.g., bottom half) of the solder balls 106 may be removed to form the semicircular shape.
- the semicircular shape of the solder balls 106 may be formed during a manufacturing process, as discussed in more detail below.
- exposing a portion of the solder balls 106 through the overmold 105 may allow the solder balls 106 to provide a connection (e.g., a through-mold connection, an electrical connection) to components of the dual-sided package 100 .
- a connection e.g., a through-mold connection, an electrical connection
- FIG. 2 A close-up view of the solder balls 106 and additional details (of the solder balls 106 ) are illustrated/discussed above in conjunction with FIG. 2 .
- FIG. 7B illustrates a pillar-based example of a dual-sided package 100 .
- An overmold 105 may be formed and/or implemented in the underside volume (where the lower component 104 is located) formed by the pillars 111 (e.g., through-mold connections).
- the overmold 105 may encapsulate at least a portion of the lower component 104 .
- the overmold 105 may fully or partially encapsulate the lower component 104 .
- the overmold 105 may encapsulate at least a portion of the pillars 111 . Portions of the pillars 111 (e.g., the upper surfaces of the pillars 111 ) may be exposed through the overmold 105 .
- the overmold 105 and/or the pillars 111 may form a land grid array (LGA) type/style package.
- LGA land grid array
- exposing a portion of the pillars 111 through the overmold 105 may allow the pillars 111 to provide a connection (e.g., a through-mold connection, an electrical connection) to components of the dual-sided package 100 .
- FIG. 8A shows that in some embodiments, a dual-sided package can include a plurality of lower components.
- a dual-sided package 100 is similar to the BGA-based example of FIG. 2 .
- the dual-sided package 100 is shown to include two lower components 104 a, 104 b mounted to the underside of a shielded package 102 .
- An overmold 105 may be formed and/or implemented in the underside volume (where the lower components 104 a and 104 b are located) formed by the solder balls (e.g., formed by a set of through-mold connections, such as a BGA).
- the overmold 105 may encapsulate at least a portion of the lower component 104 .
- the overmold 105 may fully or partially encapsulate the lower component 104 .
- the overmold 105 may encapsulate at least a portion of the solder balls (e.g., through-mold connections).
- the overmold 105 may fully or partially encapsulate the solder balls.
- the overmold 105 and/or the solder balls 106 e.g., the exposed portions of the solder balls 106
- LGA land grid array
- the solder balls 106 may have a semicircular shape.
- the bottom portion of the solder balls 106 may be removed to form the semicircular shape.
- the semicircular shape of the solder balls 106 may be formed during a manufacturing process, as discussed in more detail below. In one embodiment, exposing a portion of the solder balls 106 through the overmold 105 may allow the solder balls 106 to provide a connection (e.g., a through-mold connection, an electrical connection) to components of the dual-sided package 100 .
- a connection e.g., a through-mold connection, an electrical connection
- FIG. 2 A close-up view of the solder balls 106 and additional details (of the solder balls 106 ) are illustrated/discussed above in conjunction with FIG. 2 .
- FIG. 8B shows that in some embodiments, a dual-sided package can include a plurality of lower components.
- the dual-sided package 100 may be a pillar-based example.
- the dual-sided package 100 is shown to include two lower components 104 a, 104 b mounted to the underside of a shielded package 102 .
- An overmold 105 may be formed and/or implemented in the underside volume (where the lower components 104 a and 104 b are located) formed by the pillars 111 (e.g., through-mold connections).
- the overmold 105 may encapsulate at least a portion of the lower component 104 .
- the overmold 105 may fully or partially encapsulate the lower component 104 .
- the overmold 105 may encapsulate at least a portion of the solder balls.
- Portions of the pillars 111 e.g., the upper surfaces of the pillars 111
- the overmold 105 and/or the pillars 111 may form a land grid array (LGA) type/style package.
- exposing a portion of the pillars 111 through the overmold 105 may allow the pillars 111 to provide a connection (e.g., a through-mold connection, an electrical connection) to components of the dual-sided package.
- FIGS. 9-14 show examples of how dual-sided packages can be fabricated. As described herein, such examples can facilitate mass-production of dual-sided packages.
- FIGS. 9-13 show various stages of a fabrication process in which substantially all of dual-sided features can be implemented in a panel format having an array of to-be-separated units, before such units are separated (also referred to as singulated).
- BGA-based and/or pillar (e.g., column, posts, etc.) based dual-sided packages it will be understood that one or more features of the fabrication technique of FIGS. 9-13 can also be implemented for fabrication of dual-sided packages having other types of mounting features.
- the fabrication processes of FIGS. 9-14 can be utilized for manufacturing of dual-sided packages described herein in reference to, for example, FIGS. 3, 4, 5, 7A, 7B, 8A, 8B, 15, 16 , and/or 17 .
- a fabrication state 250 a can include a panel 252 having a plurality of to-be-singulated units. For example, singulation can occur at boundaries depicted by dashed lines 260 so at to yield singulated individual units.
- the panel 252 is shown to include a substrate panel 254 on which upper portions (collectively indicated as 256 ) are formed.
- Each unit of such an upper-portion panel can include various parts described herein in reference to FIGS. 3, 4 , and/or 5 .
- each unit of such an upper-portion panel may include shielding features of FIGS. 3, 4 , and/or 5 .
- Such parts can include various components and shielding structures mounted or implemented on the substrate panel 254 .
- the upper-portion panel 256 can also include an overmold layer which can be formed as a common layer for a number of individual units. Similar to the common overmold layer, an upper conductive layer 258 can be formed to cover a number of individual units.
- a fabrication state 262 a can include the panel 252 of FIG. 9A being inverted so that its underside faces upward. Such an inverted orientation can allow processing of the underside while the individual units are still attached in the panel.
- a fabrication state 263 a can include a lower component 104 being attached for each unit on the underside (which is facing upward) of the substrate 254 .
- the fabrication state 263 a may also include an array of solder balls 106 being formed for each unit on the underside (which is facing upward) of the substrate 254 .
- Such a step is shown to yield an array of dual-sided units to be singulated.
- the lower component 104 may be attached for each unit (on the underside) after the array of solder balls 106 is formed, or vice versa.
- the lower component (for each unit on the underside) and the array of solder balls 106 may be attached, implemented, and/or formed substantially simultaneously.
- a fabrication state 264 a can include implementing and/or forming overmold 105 on the underside (which is facing upward) of the substrate 254 .
- the overmold 105 may completely encapsulate the lower component 104 and the solder balls 106 (e.g., the through-mold connections) in the fabrication state 264 a.
- a fabrication state 266 a can include removing at least a portion of the overmold 105 .
- an outward surface (e.g., the upper surface) of the overmold 105 may be removed.
- Removing at least the portion of the overmold 105 may expose the solders balls 106 through the overmold 105 .
- the overmold 105 may partially encapsulate the solder balls 106 after the portion of the overmold 105 is removed.
- the portion of the overmold 105 may be removed using various different types of processes and/or methods.
- the overmold 105 may be ground (with an abrasive surface) to remove the portion of the overmold 105 (to expose a portion of the solder balls 106 ).
- the portion of the overmold 105 may be removed using a laser to melt and/or burn the portion of the overmold 105 (to expose a portion of the solder balls 106 ).
- the portion of the overmold 105 may be ablated.
- a stream of particles e.g., water particles, sand particles, etc.
- removing the portion of the overmold 105 may also remove a portion of the solder balls 106 .
- ablating the overmold 105 may remove the top portions of the solder balls 106 to form the semicircular shape illustrated in FIGS. 9E and 9F . This may also expose a portion of the solder balls 106 through the overmold 105 and may allow the solder balls 106 to provide a connection (e.g., an electrical connection) through the overmold 105 .
- a connection e.g., an electrical connection
- a fabrication state 268 a can include individual units being singulated to yield a plurality of dual-sided packages 100 substantially ready to be mounted to circuit boards. It will be understood that such a singulation process can be achieved while the panel ( 252 ) is in its inverted orientation (as shown in the example of FIG. 9E ), or while the panel ( 252 ) is in its upright orientation (e.g., as in the example of FIG. 9A ).
- a close-up view of the solder balls 106 and additional details (of the solder balls 106 ) are illustrated/discussed above in conjunction with FIG. 2 .
- a fabrication state 250 b can include a panel 252 having a plurality of to-be-singulated units. For example, singulation can occur at boundaries depicted by dashed lines 260 so at to yield singulated individual units.
- the panel 252 is shown to include a substrate panel 254 on which upper portions (collectively indicated as 256 ) are formed.
- Each unit of such an upper-portion panel can include various parts described herein in reference to FIGS. 3, 4 , and/or 5 .
- each unit of such an upper-portion panel may include shielding features of FIGS. 3, 4 , and/or 5 .
- Such parts can include various components and shielding structures mounted or implemented on the substrate panel 254 .
- the upper-portion panel 256 can also include an overmold layer which can be formed as a common layer for a number of individual units. Similar to the common overmold layer, an upper conductive layer 258 can be formed to cover a number of individual units.
- a fabrication state 262 b can include the panel 252 of FIG. 9A being inverted so that its underside faces upward. Such an inverted orientation can allow processing of the underside while the individual units are still attached in the panel.
- a fabrication state 263 b can include a lower component 104 being attached for each unit on the underside (which is facing upward) of the substrate 254 .
- the fabrication state 263 b may also include an array of pillars 111 being formed for each unit on the underside (which is facing upward) of the substrate 254 .
- Such a step is shown to yield an array of dual-sided units to be singulated.
- the lower component 104 may be attached for each unit (on the underside) after the array of pillars 111 are formed, or vice versa.
- the lower component (for each unit on the underside) and the array of pillars 111 may be attached, implemented, and/or formed substantially simultaneously.
- the pillars 111 may be formed using various methods, processes, technologies, etc., such as copper pillar bumping.
- a fabrication state 264 b can include implementing and/or forming overmold 105 on the underside (which is facing upward) of the substrate 254 .
- the overmold 105 may completely encapsulate the lower component 104 and the pillars 111 (e.g., the through-mold connections) in the fabrication state 264 b.
- a fabrication state 266 b can include removing at least a portion of the overmold 105 .
- an outward surface (e.g., the upper surface) of the overmold 105 may be removed.
- Removing at least the portion of the overmold 105 may expose the solders balls 106 through the overmold 105 .
- the overmold 105 may partially encapsulate the solder balls 106 after the portion of the overmold 105 is removed.
- the portion of the overmold 105 may be removed using various different types of processes and/or methods.
- the overmold 105 may be ground (with an abrasive surface) to remove the portion of the overmold 105 (to expose a portion of the solder balls 106 ).
- the portion of the overmold 105 may be removed using a laser to melt and/or burn the portion of the overmold 105 (to expose a portion of the solder balls 106 ).
- the portion of the overmold 105 may be ablated.
- a stream of particles e.g., water particles, sand particles, etc.
- removing the portion of the overmold 105 may also remove a portion of the pillars 111 .
- ablating the overmold 105 may remove the top portions of the pillars 111 . This may also expose a portion of the pillars 111 through the overmold 105 and may allow the pillars 111 to provide a connection (e.g., an electrical connection) through the overmold 105 .
- a connection e.g., an electrical connection
- a fabrication state 268 b can include individual units being singulated to yield a plurality of dual-sided packages 100 substantially ready to be mounted to circuit boards. It will be understood that such a singulation process can be achieved while the panel ( 252 ) is in its inverted orientation (as shown in the example of FIG. 9K ), or while the panel ( 252 ) is in its upright orientation (e.g., as in the example of FIG. 9G ).
- substantially all steps in fabrication of dual-sided packages can be performed in a panel format before individual units are singulated.
- the forming of the conductive layer on each unit may be performed after a singulation step/process.
- FIGS. 10-10L , FIGS. 11A-11M , FIGS. 12A-12F , FIGS. 13A-13C and FIGS. 14A-14D show examples related a process for manufacturing conformal-shielded dual-sided packages.
- singulation can be performed after process steps (e.g., mounting of a lower component and formation of a BGA) are performed on the underside of a packaging substrate.
- FIGS. 10-10L , FIGS. 11A-11M , FIGS. 12A-12F , and FIGS. 13A-13C show various example states leading to formation of dual-sided packages without conformal shielding.
- FIGS. 14A-14D show examples related to how conformal shielding can be formed for such dual-sided packages.
- a fabrication state 350 a can include a panel 352 having a plurality of to-be-singulated units. For example, singulation can occur at boundaries depicted by dashed lines 360 so at to yield singulated individual units.
- the panel 352 is shown to include a substrate panel 354 on which upper portions (collectively indicated as 356 ) are formed. Each unit of such an upper-portion panel can include various parts described herein in reference to any combination of FIGS. 3, 4, and 5 .
- Such parts can include various components and shielding structures mounted or implemented on the substrate panel 354 .
- the upper-portion panel 356 can also include an overmold layer which can be formed as a common layer for a number of individual units.
- conductive features 378 are shown to be implemented within the substrate panel 354 . Each conductive feature 378 can straddle the corresponding boundary 360 , such than when separation occurs at the boundary 360 , each of the two exposed side walls of the substrates includes an exposed portion of the conductive feature 378 that has been cut. Each of such cut conductive feature is electrically connected to a ground plane (not shown) within the corresponding substrate.
- a fabrication state 362 a can include the panel 352 of FIG. 10A being inverted so that its underside faces upward. Such an inverted orientation can allow processing of the underside while the individual units are still attached in the panel.
- a fabrication state 364 a can include a lower component 104 being attached for each unit on the underside (which is facing upward) of the substrate 354 .
- Fabrication state 364 a can also include an array of solder balls 106 being formed for each unit on the underside (which is facing upward) of the substrate 354 .
- the lower component 104 may be attached for each unit (on the underside) after the array of solder balls 106 is formed, or vice versa.
- the lower component 104 (for each unit on the underside) and the array of solder balls 106 may be attached, implemented, and/or formed substantially simultaneously.
- a fabrication state 366 a can include implementing an overmold 105 over the array of solder balls 106 and the lower components 104 .
- the overmold 105 may completely encapsulate the lower component 104 and the solder balls 106 (e.g., the through-mold connections) in the fabrication state 366 a.
- a fabrication state 367 a can include removing at least a portion of the overmold 105 .
- an outward surface (e.g., the upper surface) of the overmold 105 may be removed.
- Removing at least the portion of the overmold 105 may expose the solders balls 106 through the overmold 105 .
- the overmold 105 may partially encapsulate the solder balls 106 after the portion of the overmold 105 is removed.
- the portion of the overmold 105 may be removed using various different types of processes and/or methods.
- the overmold 105 may be ground (with an abrasive surface) to remove the portion of the overmold 105 (to expose a portion of the solder balls 106 ).
- the portion of the overmold 105 may be removed using a laser to melt and/or burn the portion of the overmold 105 (to expose a portion of the solder balls 106 ).
- the portion of the overmold 105 may be ablated.
- a stream of particles e.g., water particles, sand particles, etc.
- Such a step is shown to yield an array of un-shielded dual-sided units to be singulated.
- removing the portion of the overmold 105 may also remove a portion of the solder balls 106 .
- ablating the overmold 105 may remove the top portions of the solder balls 106 to form the semicircular shape illustrated in FIGS. 10E and 10F . This may also expose a portion of the solder balls 106 through the overmold 105 and may allow the solder balls 106 to provide a connection (e.g., an electrical connection) through the overmold 105 .
- a fabrication state 368 a can include individual units being singulated to yield a plurality of un-shielded dual-sided packages 370 substantially ready for conformal shielding process steps, or if shielding is not needed, substantially ready to be mounted to circuit boards.
- each of the dual-sided packages 370 includes side walls; and each side wall is shown to include an exposed portion of the cut conductive feature 378 .
- such a singulation process can be achieved while the panel ( 352 ) is in its inverted orientation (as shown in the example of FIG. 10E ), or while the panel ( 352 ) is in its upright orientation (e.g., as in the example of FIG. 10A ).
- a close-up view of the solder balls 106 and additional details (of the solder balls 106 ) are illustrated/discussed above in conjunction with FIG. 2 .
- a fabrication state 350 b can include a panel 352 having a plurality of to-be-singulated units. For example, singulation can occur at boundaries depicted by dashed lines 360 so at to yield singulated individual units.
- the panel 352 is shown to include a substrate panel 354 on which upper portions (collectively indicated as 356 ) are formed. Each unit of such an upper-portion panel can include various parts described herein in reference to any combination of FIGS. 3, 4, and 5 .
- Such parts can include various components and shielding structures mounted or implemented on the substrate panel 354 .
- the upper-portion panel 356 can also include an overmold layer which can be formed as a common layer for a number of individual units.
- conductive features 378 are shown to be implemented within the substrate panel 354 . Each conductive feature 378 can straddle the corresponding boundary 360 , such than when separation occurs at the boundary 360 , each of the two exposed side walls of the substrates includes an exposed portion of the conductive feature 378 that has been cut. Each of such cut conductive feature is electrically connected to a ground plane (not shown) within the corresponding substrate.
- a fabrication state 362 b can include the panel 352 of FIG. 10G being inverted so that its underside faces upward. Such an inverted orientation can allow processing of the underside while the individual units are still attached in the panel.
- a fabrication state 364 b can include a lower component 104 being attached for each unit on the underside (which is facing upward) of the substrate 354 .
- Fabrication state 364 b can also include an array of pillars 111 being formed for each unit on the underside (which is facing upward) of the substrate 354 .
- the lower component 104 may be attached for each unit (on the underside) after the array of pillars 111 is formed, or vice versa.
- the lower component 104 (for each unit on the underside) and the array of pillars 111 may be attached, implemented, and/or formed substantially simultaneously.
- a fabrication state 366 b can include implementing an overmold 105 over the array of pillars 111 and the lower components 104 .
- the overmold 105 may completely encapsulate the lower component 104 and the pillars 111 (e.g., the through-mold connections) in the fabrication state 366 b.
- a fabrication state 367 b can include removing at least a portion of the overmold 105 .
- an outward surface (e.g., the upper surface) of the overmold 105 may be removed.
- Removing at least the portion of the overmold 105 may expose the pillars 111 through the overmold 105 .
- the overmold 105 may partially encapsulate the pillars 111 after the portion of the overmold 105 is removed.
- the portion of the overmold 105 may be removed using various different types of processes and/or methods.
- the overmold 105 may be ground (with an abrasive surface) to remove the portion of the overmold 105 (to expose a portion of the pillars 111 ).
- the portion of the overmold 105 may be removed using a laser to melt and/or burn the portion of the overmold 105 (to expose a portion of the pillars 111 ).
- the portion of the overmold 105 may be ablated.
- a stream of particles e.g., water particles, sand particles, etc.
- Such a step is shown to yield an array of un-shielded dual-sided units to be singulated.
- removing the portion of the overmold 105 may also remove a portion of the pillars 111 .
- ablating the overmold 105 may remove the top portions of the pillars 111 . This may also expose a portion of the pillars 111 through the overmold 105 and may allow the pillars 111 to provide a connection (e.g., an electrical connection) through the overmold 105 .
- a fabrication state 368 a can include individual units being singulated to yield a plurality of un-shielded dual-sided packages 370 substantially ready for conformal shielding process steps, or if shielding is not needed, substantially ready to be mounted to circuit boards.
- each of the dual-sided packages 370 includes side walls; and each side wall is shown to include an exposed portion of the cut conductive feature 378 .
- such a singulation process can be achieved while the panel ( 352 ) is in its inverted orientation (as shown in the example of FIG. 10K ), or while the panel ( 352 ) is in its upright orientation (e.g., as in the example of FIG. 10G ).
- FIGS. 11A-11G show various example states leading to formation of dual-sided packages without conformal shielding.
- a fabrication state 1105 can include a panel 352 having a plurality of to-be-singulated units. For example, singulation can occur at boundaries depicted by dashed lines 360 so at to yield singulated individual units.
- the panel 352 is shown to include a substrate panel 354 on which upper portions (collectively indicated as 356 ) are formed.
- Each unit of such an upper-portion panel can include various parts described herein in reference to any combination of FIGS. 3, 4, and 5 . Such parts can include various components and shielding structures mounted or implemented on the substrate panel 354 .
- the upper-portion panel 356 can also include an overmold layer which can be formed as a common layer for a number of individual units.
- conductive features 378 are shown to be implemented within the substrate panel 354 . Each conductive feature 378 can straddle the corresponding boundary 360 , such than when separation occurs at the boundary 360 , each of the two exposed side walls of the substrates includes an exposed portion of the conductive feature 378 that has been cut. Each of such cut conductive feature is electrically connected to a ground plane (not shown) within the corresponding substrate.
- a fabrication state 1110 can include the panel 352 of FIG. 11A being inverted so that its underside faces upward. Such an inverted orientation can allow processing of the underside while the individual units are still attached in the panel.
- a fabrication state 1115 can include a lower component 104 being attached for each unit on the underside (which is facing upward) of the substrate 354 .
- the lower component 104 may be mounted, installed, etc., to the underside of the substrate 354 .
- the lower component 104 may be directly attached to the substrate or may be attached to other components (e.g., one or more metal pads) on the substrate 354 .
- a fabrication state 1120 can include implementing an overmold 105 over the lower components 104 .
- the overmold 105 may completely encapsulate the lower component 104 in the fabrication state 1120 .
- a fabrication state 1125 can include forming a plurality of cavities 1126 (e.g., holes, voids, spaces, gaps, etc.) in the overmold 105 .
- the cavities 1126 may have a partial conical shape (e.g., a cone shape with the top and bottom portions of the cone removed).
- the cavities 1126 may have a trapezoidal shape when viewed from the side (e.g., a profile view).
- the cavities 1126 may have various sizes and/or shapes.
- the cavities 1126 may be cylinder shaped, cubed shaped, trapezoid prism shaped, etc.
- the cavities 1126 may be forming using a laser (e.g., a laser drill).
- a laser may be used to burn and/or melt portions of the overmold 105 to form the cavities 1126 .
- a laser may be used to burn and/or melt portions of the overmold 105 to form the cavities 1126 .
- One having ordinary skill in the art understands that various other methods, processes, and/or operations may be used to form the cavities 1126 .
- a fabrication state 1130 can include forming a plurality of solder balls 106 (e.g., through-mold connections) within the cavities 1126 .
- solder material e.g., a conductive material that may melt at a certain temperature
- the height of the solder balls 106 may be lower than the height of the overmold 105 .
- the height of the solder balls may be equal (or substantially equal) to the height of the overmold 105 .
- the height of the solder may be higher than the height of the overmold 105 . As illustrated in FIG.
- the gap between the overmold 105 and the top of the solder balls 106 may be a gap between the overmold 105 and the top of the solder balls 106 .
- the angle of the sides of the cavities 1126 e.g., the side walls of the cavities 1126
- the gap between the overmold 105 and the top of the solder balls 106 may be larger, smaller, or may not be present, based on the shape/size of the cavities 1126 and the shape/size of the solder balls 106 .
- a fabrication state 1135 can include individual units being singulated to yield a plurality of un-shielded dual-sided packages 1190 substantially ready for conformal shielding process steps, or if shielding is not needed, substantially ready to be mounted to circuit boards.
- each of the dual-sided packages 1190 includes side walls; and each side wall is shown to include an exposed portion of the cut conductive feature 378 .
- such a singulation process can be achieved while the panel ( 352 ) is in its inverted orientation (as shown in the example of FIG. 11F ), or while the panel ( 352 ) is in its upright orientation (e.g., as in the example of FIG. 11A ).
- a close-up view of the solder balls 106 and additional details (of the solder balls 106 ) are illustrated/discussed above in conjunction with FIG. 2 .
- FIGS. 11H-11M show various example states leading to formation of dual-sided packages without conformal shielding.
- a fabrication state 1155 can include a panel 352 having a plurality of to-be-singulated units. For example, singulation can occur at boundaries depicted by dashed lines 360 so at to yield singulated individual units.
- the panel 352 is shown to include a substrate panel 354 on which upper portions (collectively indicated as 356 ) are formed.
- Each unit of such an upper-portion panel can include various parts described herein in reference to any combination of FIGS. 3, 4, and 5 . Such parts can include various components and shielding structures mounted or implemented on the substrate panel 354 .
- the upper-portion panel 356 can also include an overmold layer which can be formed as a common layer for a number of individual units.
- conductive features 378 are shown to be implemented within the substrate panel 354 . Each conductive feature 378 can straddle the corresponding boundary 360 , such than when separation occurs at the boundary 360 , each of the two exposed side walls of the substrates includes an exposed portion of the conductive feature 378 that has been cut. Each of such cut conductive feature is electrically connected to a ground plane (not shown) within the corresponding substrate.
- a fabrication state 1160 can include the panel 352 of FIG. 11A being inverted so that its underside faces upward. Such an inverted orientation can allow processing of the underside while the individual units are still attached in the panel.
- a fabrication state 1165 can include a lower component 104 being attached for each unit on the underside (which is facing upward) of the substrate 254 .
- the fabrication state 1165 may also include an array of solder balls 106 being formed for each unit on the underside (which is facing upward) of the substrate 254 .
- Such a step is shown to yield an array of dual-sided units to be singulated.
- the lower component 104 may be attached for each unit (on the underside) after the array of solder balls 106 is formed, or vice versa.
- the lower component (for each unit on the underside) and the array of solder balls 106 may be attached, implemented, and/or formed substantially simultaneously.
- a fabrication state 1170 can include implementing an overmold 105 over the lower components 104 and the solder balls 106 .
- the overmold 105 may completely encapsulate the lower component 104 in the fabrication state 1120 .
- the overmold 105 may completely encapsulate the solder balls 106 .
- the height of the overmold 105 may be higher than the height of the solder balls 106 .
- the height of the overmold 105 may be equal (or substantially equal) to the height of the solder balls.
- a fabrication state 1125 can include removing portions of the overmold 105 in areas that are around the solder balls 106 (e.g., around the through-mold connections). For example, portions of the overmold 105 in a circular area (centered around a solder ball 106 ) may be removed (e.g., a circular portion of the overmold 105 centered around a solder ball 106 may be removed). As illustrated in FIG. 11L , there may be a gap between the overmold 105 and the top of the solder balls 106 .
- the portions of the overmold 105 that are removed may have various sizes and/or shapes.
- a square shaped portion of the overmold centered around a solder ball 106 may be removed.
- portions of the overmold 105 may be removed using a laser (e.g., a laser drill).
- a laser may be used to burn and/or melt portions of the overmold 105 in the areas around the solder balls 106 .
- various other methods, processes, and/or operations may be used to remove portions of the overmold 105 .
- there may be a gap between the overmold 105 and the top of the solder balls 106 there may be a gap between the overmold 105 and the top of the solder balls 106 . In other embodiments, the gap between the overmold 105 and the top of the solder balls 106 may be larger, smaller, or may not be present.
- a fabrication state 1135 can include individual units being singulated to yield a plurality of un-shielded dual-sided packages 1195 substantially ready for conformal shielding process steps, or if shielding is not needed, substantially ready to be mounted to circuit boards.
- each of the dual-sided packages 1195 includes side walls; and each side wall is shown to include an exposed portion of the cut conductive feature 378 .
- such a singulation process can be achieved while the panel ( 352 ) is in its inverted orientation (as shown in the example of FIG. 11L ), or while the panel ( 352 ) is in its upright orientation (e.g., as in the example of FIG. 11H ).
- a close-up view of the solder balls 106 and additional details (of the solder balls 106 ) are illustrated/discussed above in conjunction with FIG. 2 .
- FIGS. 12A-12F show various example states leading to formation of dual-sided packages without conformal shielding.
- a fabrication state 1205 can include a panel 352 having a plurality of to-be-singulated units. For example, singulation can occur at boundaries depicted by dashed lines 360 so at to yield singulated individual units.
- the panel 352 is shown to include a substrate panel 354 on which upper portions (collectively indicated as 356 ) are formed.
- Each unit of such an upper-portion panel can include various parts described herein in reference to any combination of FIGS. 4, 5, and 5 . Such parts can include various components and shielding structures mounted or implemented on the substrate panel 354 .
- the upper-portion panel 356 can also include an overmold layer which can be formed as a common layer for a number of individual units.
- conductive features 378 are shown to be implemented within the substrate panel 354 . Each conductive feature 378 can straddle the corresponding boundary 360 , such than when separation occurs at the boundary 360 , each of the two exposed side walls of the substrates includes an exposed portion of the conductive feature 378 that has been cut. Each of such cut conductive feature is electrically connected to a ground plane (not shown) within the corresponding substrate.
- a fabrication state 1210 can include the panel 352 of FIG. 12A being inverted so that its underside faces upward. Such an inverted orientation can allow processing of the underside while the individual units are still attached in the panel.
- a fabrication state 1265 can include a lower component 104 being attached for each unit on the underside (which is facing upward) of the substrate 254 .
- the fabrication state 1265 may also include an array of solder balls 106 being formed for each unit on the underside (which is facing upward) of the substrate 254 .
- Such a step is shown to yield an array of dual-sided units to be singulated.
- the lower component 104 may be attached for each unit (on the underside) after the array of solder balls 106 is formed, or vice versa.
- the lower component (for each unit on the underside) and the array of solder balls 106 may be attached, implemented, and/or formed substantially simultaneously.
- a fabrication state 1270 can include implementing an overmold 105 over the lower components 104 and the solder balls 106 .
- the overmold 105 may completely encapsulate the lower component 104 in the fabrication state 1220 .
- the overmold 105 may also substantially encapsulate the solder balls 106 .
- the height of the overmold 105 may be shorter than the height of the solder ball 106 but the majority of the solder ball 106 may be encapsulated by the overmold 105 .
- a layer 117 (e.g., a film, a coating, a thin sheet, etc.) of overmold material may be deposited on the tops of the solder balls 106 after the overmold 105 is implemented over the lower components 104 and the solder balls 106 .
- a fabrication state 1225 can include removing the layer 117 (e.g., the film of overmold material) from the tops of the solder balls 106 .
- a laser may be used to burn and/or melt the layer 117 from the top of a solder ball 106 .
- various other methods, processes, and/or operations may be used to remove the layer 117 .
- the gap between the overmold 105 and the top of the solder balls 106 may be larger, smaller, or may not be present.
- a fabrication state 1230 can include individual units being singulated to yield a plurality of un-shielded dual-sided packages 1290 substantially ready for conformal shielding process steps, or if shielding is not needed, substantially ready to be mounted to circuit boards.
- each of the dual-sided packages 1290 includes side walls; and each side wall is shown to include an exposed portion of the cut conductive feature 378 .
- such a singulation process can be achieved while the panel ( 352 ) is in its inverted orientation (as shown in the example of FIG. 12E ), or while the panel ( 352 ) is in its upright orientation (e.g., as in the example of FIG. 12A ).
- a close-up view of the solder balls 106 and additional details (of the solder balls 106 ) are illustrated/discussed above in conjunction with FIG. 2 .
- FIGS. 13A-13C show various example states leading to formation of dual-sided packages without conformal shielding.
- a fabrication state 1305 may include a panel 352 with solder balls 106 , components 104 , and an overmold 105 implemented on a substrate panel 354 , as discussed above.
- Upper portions (collectively indicated as 356 ) may be formed on the substrate panel 354 , as discussed above.
- the panel 352 may result from the fabrication state 1130 illustrated in FIG. 11F , the fabrication state 1175 illustrated in FIG. 11 L, and/or the fabrication state 12 E illustrated in FIG. 12E .
- conductive features 378 are shown to be implemented within the substrate panel 354 .
- Each conductive feature 378 can straddle the corresponding boundary 360 , such than when separation occurs at the boundary 360 , each of the two exposed side walls of the substrates includes an exposed portion of the conductive feature 378 that has been cut. Each of such cut conductive feature is electrically connected to a ground plane (not shown) within the corresponding substrate.
- a fabrication state 1310 may include forming, depositing, implementing, etc., conductive material 118 on top of the solder balls 106 .
- additional solder balls may be formed on top of the solder balls 106 .
- solder material may be screen printed on top of the solder balls 106 .
- the additional conductive material may be used to attach the dual-sided packages to a surface (e.g., to a circuit board).
- the additional conductive material may also provide electrical connections and/or thermal conductivity between components/circuits of the dual-sided packages and/or other components/circuits (e.g., between components/circuits located on a circuit board).
- a fabrication state 1315 can include individual units being singulated to yield a plurality of un-shielded dual-sided packages 1390 substantially ready for conformal shielding process steps, or if shielding is not needed, substantially ready to be mounted to circuit boards.
- each of the dual-sided packages 1390 includes side walls; and each side wall is shown to include an exposed portion of the cut conductive feature 378 .
- such a singulation process can be achieved while the panel ( 352 ) is in its inverted orientation (as shown in the example of FIG. 13A ), or while the panel ( 352 ) is in its upright orientation.
- a close-up view of the solder balls 106 and additional details (of the solder balls 106 ) are illustrated/discussed above in conjunction with FIG. 2 .
- FIGS. 14A-14D show various states of a process that can be implemented to process individual units such as the un-shielded dual-sided packages 370 of FIG. 10D with a frame carrier 300 .
- a fabrication state 380 can include a plurality of un-shielded dual-sided packages 370 being positioned (arrow 382 ) over an adhesive layer 320 .
- the adhesive layer 320 may include a layer of glue, a layer of paste, a layer of epoxy/epoxy resin, etc.
- the adhesive layer 320 may be deposited over a surface 321 of the frame carrier 300 (e.g., an upper surface of the frame carrier 300 ).
- a close-up view of the solder balls 106 and additional details (of the solder balls 106 ) are illustrated/discussed above in conjunction with FIG. 2 .
- a fabrication state 383 can include the un-shielded dual-sided packages 370 positioned such that the solder balls 106 and/or a surface of the overmold on the underside of the packaging substrate (e.g., overmold 105 illustrated in FIG. 2 ) engage (e.g., are in contact with) the surface 321 .
- the solder balls 106 may engage the surface of the adhesive layer 320 .
- Such an engagement between the lower surface of the dual-sided packages 370 and the surface 321 is indicated as 388 . Also as illustrated in FIG.
- the overmold 105 on the underside of the packaging substrate may engage adhesive layer 320 (e.g., may contact the adhesive layer 320 ). Such an engagement between the overmold 105 on the underside of the packaging substrate and the adhesive layer 320 is indicated as 386 .
- steps can include formation of a conformal shielding layer on the upper surface and the side walls ( 390 ) of each un-shielded dual-sided package 370 . More particularly, and as described herein, the position of the un-shielded dual-sided package 370 relative to the plate 304 allows the side walls 390 to be exposed substantially fully for metal deposition by techniques such as sputter deposition. As further shown in FIG.
- the un-shielded dual-sided packages 370 can be arranged so that the un-shielded dual-sided packages 370 positioned therein are spaced apart sufficiently to facilitate effective sputter deposition of metal on the side walls 390 .
- FIG. 14C shows a fabrication state 384 where a conformal conductive layer 385 has been formed.
- a conformal conductive layer 385 is shown to cover the upper surface and the side walls ( 390 ) of each dual-sided package.
- the side wall portion of the conformal conductive layer 385 is further shown to be in electrical contact with the conductive features 378 (which are in turn connected to a ground plane (not shown)) to thereby form an RF shield for the dual-sided package.
- FIG. 14D shows a fabrication state 386 where shielded dual-sided packages 100 are being removed (arrow 387 ) from the frame carrier 300 .
- the resulting dual-sided packages 100 with conformal shielding can be obtained by different processes.
- the dual-sided packages 100 with conformal shielding as described in reference to FIG. 14D are similar to the dual-sided packages 100 (with conformal shielding) of FIG. 14D . Accordingly, it will be understood that other variations in process steps can be implemented.
- portions of the adhesive layer 320 may remain attached (e.g., may stick) to the shielded dual-sided packages 100 when the shielded dual-sided packages 100 are removed (not shown in the figures).
- the portions of the adhesive layer 320 that remain attached to the shielded dual-sided packages 100 may be removed in a later process.
- the portions of the adhesive layer 320 that remain attached to the shielded dual-sided packages 100 may be removed during a cleaning process.
- a shielded package and a lower component of a dual-sided package can include different combinations of components.
- FIG. 15 shows that in some embodiments, a dual-sided package 100 can include a shielded package 102 having one or more surface-mount technology (SMT) devices 400 mounted on a packaging substrate 402 .
- SMT surface-mount technology
- one or more semiconductor die 104 can be mounted under the packaging substrate 402 . As described herein, such one or more die can be mounted within a region generally defined by an array of solder balls 106 .
- an overmold 404 can be formed over the packaging substrate 402 so as to substantially encapsulate the SMT device(s) 404 , and to facilitate shielding functionalities. It will be understood that the shielded package 102 can include one or more shielding features as described herein.
- An overmold 105 may be formed and/or implemented in the underside volume (where the semiconductor die 104 is located) formed by the solder balls 106 (e.g., formed by a set of through-mold connections, such as a BGA). In one embodiment, the overmold 105 may encapsulate at least a portion of the semiconductor die 104 . For example, the overmold 105 may fully or partially encapsulate the semiconductor die 104 .
- the overmold 105 may encapsulate at least a portion of the solder balls 106 (e.g., through-mold connections). For example, the overmold 105 may fully or partially encapsulate the solder balls 106 . As discussed above, the overmold 105 and/or the solder balls 106 (e.g., the exposed portions of the solder balls 106 ) may form a land grid array (LGA) type/style package. A close-up view of the solder balls 106 and additional details (of the solder balls 106 ) are illustrated/discussed above in conjunction with FIG. 2 .
- LGA land grid array
- FIG. 16 shows a dual-sided package 100 that can be a more specific example of the dual-sided package of FIG. 15 .
- the SMT device(s) can be one or more filters and/or filter-based devices 400 that are encapsulated by an overmold 404 .
- the semiconductor die 104 mounted under a packaging substrate 402 can be a die having RF amplifier(s) and/or switch(es). Accordingly, such a dual-side package can be implemented as different modules configured to facilitate transmission and/or reception of RF signals.
- the dual-sided package 100 can be implemented as a power amplifier (PA) module, a low-noise amplifier (LNA) module, a front-end module (FEM), a switching module, etc.
- An overmold 105 may be formed and/or implemented in the underside volume (where the semiconductor die 104 is located) formed by the solder balls 106 (e.g., formed by a set of through-mold connections, such as a BGA).
- the overmold 105 may encapsulate at least a portion of the semiconductor die 104 .
- the overmold 105 may fully or partially encapsulate the semiconductor die 104 .
- the overmold 105 may encapsulate at least a portion of the solder balls 106 (e.g., through-mold connections). For example, the overmold 105 may fully or partially encapsulate the solder balls 106 . As discussed above, the overmold 105 and/or the solder balls 106 (e.g., the exposed portions of the solder balls 106 ) may form a land grid array (LGA) type/style package. A close-up view of the solder balls 106 and additional details (of the solder balls 106 ) are illustrated/discussed above in conjunction with FIG. 2 .
- LGA land grid array
- FIG. 17 shows a dual-sided package 100 that can be a more specific example of the dual-sided package of FIG. 16 .
- the semiconductor die 104 mounted under a packaging substrate 402 can be a die having one or more LNAs and one or more switches.
- such a dual-side package can be implemented as a module having LNA-related functionalities, including, for example, an LNA module.
- An overmold 105 may be formed and/or implemented in the underside volume (where the semiconductor die 104 is located) formed by the solder balls 106 (e.g., formed by a set of through-mold connections, such as a BGA).
- the overmold 105 may encapsulate at least a portion of the semiconductor die 104 .
- the overmold 105 may fully or partially encapsulate the semiconductor die 104 .
- the overmold 105 may encapsulate at least a portion of the solder balls 106 (e.g., through-mold connections).
- the overmold 105 may fully or partially encapsulate the solder balls 106 .
- the overmold 105 and/or the solder balls 106 e.g., the exposed portions of the solder balls 106
- LGA land grid array
- FIG. 18A illustrates a top-down perspective view of an underside of a dual-sided package 1805 , according to some embodiments.
- the dual-sided package 1805 may result from the fabrication/manufacturing process illustrated in FIGS. 9A-9L and 10A-10L .
- the dual sided package includes a substrate on which an upper portion (collectively indicated as 356 ) are formed, as discussed above.
- the solder balls 106 and the overmold 105 may be implemented on a surface of the upper portion 356 , as discussed above.
- the solder balls 106 may be arranged around a region 1806 .
- a component e.g., component 104 discussed above
- the solder balls 106 may be arranged such that the solder balls 106 form a rectangular perimeter around the region 1806 .
- a first group of solder balls may form a rectangular perimeter around the region 1806 (e.g., the inner rectangular perimeter of solder balls 106 ).
- a second group of solder balls 106 may form a rectangular perimeter around the first group of solder balls 106 (e.g., the outer rectangular perimeter of solder balls 106 ).
- the solder balls 106 are exposed through the overmold 105 .
- portions of the solder balls 106 may be removed when portions of the overmold 105 are removed during a fabrication/manufacturing process/state, as discussed above.
- the top of the remaining portions of the solder balls 106 may be visible after the portions of the overmold 105 are removed.
- FIG. 18B illustrates a top-down perspective view of an underside of a dual-sided package 1810 , according to some embodiments.
- the dual-sided package 1810 may result from the fabrication/manufacturing process illustrated in FIGS. 11A-11M and 12A-12F .
- the dual sided package includes a substrate on which an upper portion (collectively indicated as 356 ) are formed, as discussed above.
- the solder balls 106 and the overmold 105 may be implemented on a surface of the upper portion 356 , as discussed above.
- the solder balls 106 may be arranged around a region 1811 .
- a component e.g., component 104 discussed above
- the solder balls 106 may be arranged such that the solder balls 106 form a rectangular perimeter around the region 1811 .
- a first group of solder balls may form a rectangular perimeter around the region 1811 (e.g., the inner rectangular perimeter of solder balls 106 ).
- a second group of solder balls 106 may form a rectangular perimeter around the first group of solder balls 106 (e.g., the outer rectangular perimeter of solder balls 106 ).
- the solder balls 106 are exposed through the overmold 105 . Also as illustrated, portions of the overmold 105 in regions around each solder ball 106 (e.g., in a circular region around each solder ball 106 ) have been removed, as discussed above. Removing the portions of the overmold 105 in the regions around each solder ball 106 may create a gap (e.g., a torus/donut shaped gap between each solder ball 106 and the overmold 105 , as discussed above.
- a gap e.g., a torus/donut shaped gap between each solder ball 106 and the overmold 105 , as discussed above.
- FIG. 18C illustrates a bottom-up close-up perspective view of a portion of an underside of a dual-sided package 1815 , according to some embodiments.
- the dual-sided package 1810 may result from the fabrication/manufacturing process illustrated in FIGS. 13A-13C .
- the dual sided package includes a substrate on which an upper portion (collectively indicated as 356 ) are formed, as discussed above.
- the solder balls and the overmold 105 may be implemented on a surface of the upper portion 356 , as discussed above.
- Additional conductive material 118 may be formed, implemented, deposited, etc., on top of the solder balls, as discussed above in conjunction with FIGS. 13A-13C .
- the additional conductive material 118 may result in a dome shape that protrudes above the surface of the overmold 105 .
- the height of the conductive material 118 may be greater than the height of the overmold 105 .
- a component e.g., component 104 illustrated in FIG. 1
- through-mold connections e.g., contact features, solder balls, pillars, etc.
- a component may not be located in the middle of a surface of a module and may be located along an outer edge (e.g., a left edge) of the surface of the module.
- through-mold connections e.g., solder balls, pillars, contact features, etc.
- through-mold connections may be located in the middle of the surface of a module (e.g., may be located where component 104 is located in FIG. 6B ).
- FIGS. 19 and 20 show examples of how the dual-sided package 100 illustrated in the figures can be implemented in wireless devices.
- FIG. 19 shows that in some embodiments, a dual-sided package having one or more features as described herein can be implemented as a diversity receive (RX) module 100 .
- RX diversity receive
- Such a module can be implemented relatively close to a diversity antenna 420 so as to minimize or reduce losses and/or noise in a signal path 422 .
- the diversity RX module 100 can be configured such that switches 410 and 412 , as well as LNAs 414 , are implemented in a semiconductor die (depicted as 104 ) that is mounted underneath a packaging substrate. Filters 400 can be mounted on such a packaging substrate as described herein.
- RX signals processed by the diversity RX module 100 can be routed to a transceiver through a signal path 424 .
- the foregoing implementation of the diversity RX module 100 close to the antenna 420 can provide a number of desirable features.
- FIG. 20 shows that in some embodiment a dual-sided package having one or more features as described herein can be implemented in other types of LNA applications.
- an LNA or LNA-related module 100 can be implemented as a dual-sided package as described herein, and such a module can be utilized with a main antenna 524 .
- the example LNA module 100 of FIG. 20 can include, for example, one or more LNAs 104 , a bias/logic circuit 432 , and a band-selection switch 430 . Some or all of such circuits can be implemented in a semiconductor die that is mounted under a packaging substrate of the LNA module 100 . In such an LNA module, some or all of duplexers 400 can be mounted on the packaging substrate so as to form a dual-sided package having one or more features as described herein.
- FIG. 20 further depicts various features associated with the example wireless device 500 .
- a diversity RX module 100 of FIG. 19 can be included in the wireless device 500 with the LNA module 100 , in place of the LNA module 100 , or any combination thereof.
- a dual-sided package having one or more features as described herein can be implemented in the wireless device 500 as a non-LNA module.
- a power amplifier (PA) circuit 518 having a plurality of PAs can provide an amplified RF signal to a switch 430 (via duplexers 400 ), and the switch 430 can route the amplified RF signal to an antenna 524 .
- the PA circuit 518 can receive an unamplified RF signal from a transceiver 514 that can be configured and operated in known manners.
- the transceiver 514 can also be configured to process received signals. Such received signals can be routed to the LNA 104 from the antenna 524 , through the duplexers 400 . Various operations of the LNA 104 can be facilitated by the bias/logic circuit 432 .
- the transceiver 514 is shown to interact with a baseband sub-system 510 that is configured to provide conversion between data and/or voice signals suitable for a user and RF signals suitable for the transceiver 514 .
- the transceiver 514 is also shown to be connected to a power management component 506 that is configured to manage power for the operation of the wireless device 500 .
- a power management component can also control operations of the baseband sub-system 510 .
- the baseband sub-system 510 is shown to be connected to a user interface 502 to facilitate various input and output of voice and/or data provided to and received from the user.
- the baseband sub-system 510 can also be connected to a memory 504 that is configured to store data and/or instructions to facilitate the operation of the wireless device, and/or to provide storage of information for the user.
- a wireless device does not need to be a multi-band device.
- a wireless device can include additional antennas such as diversity antenna, and additional connectivity features such as Wi-Fi, Bluetooth, and GPS.
- the words “comprise,” “comprising,” and the like are to be construed in an inclusive sense, as opposed to an exclusive or exhaustive sense; that is to say, in the sense of “including, but not limited to.”
- the word “coupled”, as generally used herein, refers to two or more elements that may be either directly connected, or connected by way of one or more intermediate elements. Additionally, the words “herein,” “above,” “below,” and words of similar import, when used in this application, shall refer to this application as a whole and not to any particular portions of this application. Where the context permits, words in the above Description using the singular or plural number may also include the plural or singular number respectively.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Ceramic Engineering (AREA)
- Geometry (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
- This application claims priority to U.S. Provisional Application No. 62/404,015 filed Oct. 4, 2016, entitled DUAL-SIDED RADIO-FREQUENCY PACKAGE WITH OVERMOLD STRUCTURE, and to U.S. Provisional Application No. 62/404,022 filed Oct. 4, 2016, entitled RADIO-FREQUENCY DEVICE WITH DUAL-SIDED OVERMOLD STRUCTURE, and to U.S. Provisional Application No. 62/404,029 filed Oct. 4, 2016, entitled CIRCUITS AND METHODS RELATED TO RADIO-FREQUENCY DEVICES WITH DUAL-SIDED OVERMOLD STRUCTURE, the disclosure of each of which is hereby expressly incorporated by reference herein in its entirety.
- The present disclosure generally relates to packaging of circuit devices.
- The present disclosure relates to fabrication of packaged electronic modules such as radio-frequency (RF) modules. In radio-frequency (RF) applications, RF circuits and related devices can be implemented in a packaged module. Such a packaged module can then be mounted on a circuit board such as a phone board.
- In accordance with some implementations, the present disclosure relates to a packaged radio-frequency (RF) device. The packaged radio-frequency device includes a packaging substrate configured to receive one or more components, the packaging substrate including a first side and a second side. The packaged radio-frequency device also includes a shielded package implemented on the first side of the packaging substrate, the shielded package including a first circuit and a first overmold structure, and the shielded package configured to provide radio-frequency shielding for at least a portion of the first circuit. The packaged radio-frequency device further includes a set of through-mold connections implemented on the second side of the packaging substrate, the set of through-mold connections defining a mounting volume on the second side of the packaging substrate, a component implemented within the mounting volume and a second overmold structure substantially encapsulating one or more of the component or the set of through-mold connections.
- In some embodiments, at least a portion of the set of through-mold connections is exposed through the second overmold structure. In some embodiments, the set of through-mold connections comprises a metallic material. In some embodiments, the set of through-mold connections comprises a set of pillars configured to allow the packaged radio-frequency device to be mounted on a circuit board. In some embodiments, the first and second sides of the packaging substrate correspond to upper and lower sides, respectively, when the packaged radio-frequency device is oriented to be mounted on a circuit board. In some embodiments, the set of through-mold connections comprises a ball grid array configured to allow the packaged radio-frequency device to be mounted on a circuit board.
- In some embodiments, the ball grid array includes a first group of solder balls arranged to partially or fully surround the component mounted on the lower side of the packaging substrate. In some embodiments, the ball grid array further includes a second group of solder balls arranged to partially or fully surrounds the first group of solder balls. In some embodiments, at least some of the first group of solder balls are electrically connected to input and output nodes of the first circuit. In some embodiments, each of the second group of solder balls is electrically connected to a ground plane within the packaging substrate.
- In some embodiments, the first group of solder balls forms a rectangular perimeter around the component mounted on the lower side of the packaging substrate. In some embodiments, the second group of solder balls forms a rectangular perimeter around the first group of solder balls.
- In some embodiments, the packaging substrate includes a laminate substrate. In some embodiments, the packaging substrate includes a ceramic substrate. In some embodiments, the ceramic substrate includes a low-temperature co-fired ceramic substrate.
- In some embodiments, the first overmold structure substantially encapsulates the first circuit. In some embodiments, the shielded package further includes an upper conductive layer implemented on the first overmold structure, the upper conductive layer electrically connected to a ground plane within the packaging substrate. In some embodiments, the electrical connection between the upper conductive layer and a ground plane is achieved through one or more conductors within the first overmold structure.
- In some embodiments, the one or more conductors include shielding wirebonds arranged relative to the first circuit to provide RF shielding functionality for at least a portion of the first circuit. In some embodiments, the one or more conductors include one or more surface-mount technology devices mounted on the packaging substrate, the one or more surface-mount technology devices arranged relative to the first circuit to provide radio-frequency shielding functionality for at least a portion of the first circuit.
- In some embodiments, the electrical connection between the upper conductive layer and a ground plane is achieved through a conformal conductive coating implemented on one or more sides of the first overmold structure. In some embodiments, the conformal conductive coating extends to corresponding one or more sides of the packaging substrate.
- In some embodiments, the packaging substrate includes one or more conductive features each having a portion exposed at the corresponding side of the packaging substrate to form an electrical connection with the conformal conductive coating, each conductive feature further connected to the ground plane within the substrate packaging.
- In some embodiments, the upper conductive layer is a conformal conductive layer. In some embodiments, the conformal conductive layer substantially covers all four sides of the first overmold structure and all four sides of the packaging substrate. In some embodiments, the conformal conductive coating is implemented on one or more sides of the first overmold structure. In some embodiments, the conformal conductive layer substantially covers all four sides of the first overmold structure.
- In some embodiments, the component includes a surface-mount technology device. In some embodiments, the surface-mount technology device includes a passive device or an active radio-frequency device. In some embodiments, the component includes a die. In some embodiments, the die includes a semiconductor die. In some embodiments, the semiconductor die is configured to facilitate processing of radio-frequency signals by the first circuit.
- The present disclosure also relates to a wireless device. The wireless device includes a circuit board configured to receive a plurality of packaged modules. The wireless device further includes a shielded radio-frequency module mounted on the circuit board, the radio-frequency module including a packaging substrate configured to receive a plurality of components, the packaging substrate including a first side and a second side, the radio-frequency module further including a shielded package implemented on the first side of the packaging substrate, the shielded package including a first circuit and a first overmold structure, the shielded package configured to provide radio-frequency shielding for at least a portion of the first circuit, the radio-frequency module further including a set of through-mold connections implemented on the second side of the packaging substrate, the set of through-mold connections defining a mounting volume on the second side of the packaging substrate, the radio-frequency module further including a component implemented within the mounting volume and a second overmold structure substantially encapsulating one or more of the component or the set of through-mold connections.
- The present disclosure also relates to a method for manufacturing packaged radio-frequency (RF) devices. The method includes providing a packaging substrate configured to receive a plurality of components, the packaging substrate including a first side and a second side. The method further includes forming a shielded package on the first side of the packaging substrate, the shielded package including a first circuit and a first overmold structure, the shielded package configured to provide RF shielding for at least a portion of the first circuit. The method further includes mounting a component on the second side of the packaging substrate, and arranging a set of through-mold connections on the second side of the packaging substrate such that the set of through-mold connections is positioned relative to the component. The method also includes forming a second overmold structure over the component and the set of through-mold connections and removing a portion of the second overmold structure.
- In some embodiments, removing the portion of the second overmold structure comprises ablating the portion of the second overmold structure. In some embodiments, ablating the portion of the second overmold structure exposes the set of through-mold connections through the second overmold structure. In some embodiments, removing the portion of the second overmold structure comprises removing portions of the set of through-mold connections. In some embodiments, removing the portion of the second overmold structure comprises removing a film of overmold material from the set of through-mold connections. In some embodiments, removing the portion of the second overmold structure comprises removing overmold material in areas surrounding the set of through-mold connections.
- In some embodiments, the first overmold structure substantially encapsulates the first circuit. In some embodiments, the set of through-mold connections comprises a metallic material. In some embodiments, the set of through-mold connections is configured to allow the packaged RF device to be mounted on a circuit board. In some embodiments, arranging the set of through-mold connections comprises arranging a first group of through-mold connections to partially or fully surround the component mounted on the lower side of the packaging substrate. In some embodiments, arranging the set of through-mold connections further comprises arranging a second group of through-mold connections to partially or fully surround the first group of through-mold connections.
- In some embodiments, the method further includes electrically connecting at least some of the first group of through-mold connections to input and output nodes of the first circuit. In some embodiments, the method further includes electrically connecting at least some of the second group of through-mold connections to a ground plane within the packaging substrate.
- In some embodiments, the packaging substrate includes a laminate substrate. In some embodiments, the packaging substrate includes a ceramic substrate. In some embodiments, the ceramic substrate includes a low-temperature co-fired ceramic (LTCC) substrate.
- The present disclosure also relates to a method for manufacturing packaged radio-frequency (RF) devices. The method includes providing a packaging substrate panel an array of units, the packaging substrate panel including a first side and a second side and forming a package on the first side of the packaging substrate panel to yield a packaged panel and such that each unit includes a first circuit and a first overmold structure. The method further includes performing at least one processing operation on the second side of the packaging substrate to yield a dual-sided panel, the second side of the packaging substrate including a second component and a second overmold structure. The method also includes singulating the dual-sided panel to yield a plurality of individual dual-sided packages and forming a conformal shielding layer for each of the individual dual-sided packages arranged in a frame such that a conformal shielding layer covers an upper surface and at least one side wall of the individual dual-sided package.
- In some embodiments, the at least one processing operation on the second side comprises mounting a component for each unit on the second side of the packaging substrate. In some embodiments, the at least one processing operation on the second side further comprises arranging a set of through-mold connections for each unit relative to the component on the second side of the packaging substrate. In some embodiments, the at least one processing operation on the second side further comprises forming the second overmold structure over the component and the set of through-mold connections. In some embodiments, the at least one processing operation on the second side further comprises removing a portion of the second overmold structure.
- In some embodiments, removing the portion of the second overmold structure comprises ablating the portion of the second overmold structure. In some embodiments, ablating the portion of the second overmold structure exposes the set of through-mold connections through the second overmold structure. In some embodiments, removing the portion of the second overmold structure comprises removing portions of the set of through-mold connections. In some embodiments, removing the portion of the second overmold structure comprises removing a film of overmold material from the set of through-mold connections. In some embodiments, removing the portion of the second overmold structure comprises removing overmold material in areas surrounding the set of through-mold connections.
- In some embodiments, the set of through-mold connections comprises a ball grid array (BGA). In some embodiments, the conformal shielding layer covers substantially all of the side walls of the individual dual-sided package. In some embodiments, each of the individual dual-sided packages is held on the frame by a tape. In some embodiments, the forming of the conformal shielding layer includes a sputter deposition process.
- In some embodiments, the frame has a rectangular shape configured to hold the individual dual-sided packages in a rectangular array. In some embodiments, the frame has a wafer-like format suitable for the sputter deposition process. In some embodiments, the individual dual-sided packages are arranged in a selected ring region on the wafer-like frame.
- The present disclosure relates to a method for manufacturing packaged radio-frequency (RF) devices. The method includes providing a packaging substrate configured to receive a plurality of components, the packaging substrate including a first side and a second side and forming a shielded package on the first side of the packaging substrate, the shielded package including a first circuit and a first overmold structure, the shielded package configured to provide RF shielding for at least a portion of the first circuit. The method further includes mounting a component on the second side of the packaging substrate and forming a second overmold structure over the component. The method includes forming a set of cavities in the second overmold structure, the set of cavities positioned relative to the component and forming a set of through-mold connections in the set of cavities in the second overmold structure.
- In some embodiments, the shielded package comprises a second overmold structure that substantially encapsulates the first circuit. In some embodiments, the set of through-mold connections comprises a metallic material. In some embodiments, the set of through-mold connections is configured to allow the packaged RF device to be mounted on a circuit board.
- In some embodiments, forming the set of cavities comprises forming a first group of cavities vias to partially or fully surround the component mounted on the lower side of the packaging substrate. In some embodiments, forming the set of cavities further comprises forming a second group of cavities to partially or fully surround the first group of cavities. In some embodiments, the method further includes electrically connecting at least some of the set of through-mold connections to a ground plane within the packaging substrate. In some embodiments, the method further includes forming additional conductive material on the set of through-mold connections.
- In some embodiments, the packaging substrate includes a laminate substrate. In some embodiments, the packaging substrate includes a ceramic substrate. In some embodiments, the ceramic substrate includes a low-temperature co-fired ceramic (LTCC) substrate.
- The present disclosure also relates to a method for manufacturing packaged radio-frequency (RF) devices. The method includes providing a packaging substrate panel an array of units, the packaging substrate panel including a first side and a second side and forming a package on the first side of the packaging substrate panel to yield a packaged panel and such that each unit includes a first circuit and a first overmold structure. The method further includes performing at least one processing operation on the second side of the packaging substrate to yield a dual-sided panel, the second side of the packaging substrate including a second component and a second overmold structure and singulating the dual-sided panel to yield a plurality of individual dual-sided packages.
- In some embodiments, the method further includes forming a conformal shielding layer for each of the individual dual-sided packages arranged in a frame such that a conformal shielding layer covers an upper surface and at least one side wall of the individual dual-sided package.
- In some embodiments, the at least one processing operation on the second side comprises mounting a component for each unit on the second side of the packaging substrate. In some embodiments, the at least one processing operation on the second side further comprises forming a second overmold structure over the component. In some embodiments, the at least one processing operation on the second side further comprises forming a set of cavities in the second overmold structure, the set of cavities positioned relative to the component. In some embodiments, the at least one processing operation on the second side further comprises forming a set of through-mold connections in the set of cavities in the second overmold structure.
- In some embodiments, the set of through-mold connections comprises a ball grid array (BGA). In some embodiments, the conformal shielding layer covers substantially all of the side walls of the individual dual-sided package. In some embodiments, each of the individual dual-sided packages is held on the frame by a tape. In some embodiments, the forming of the conformal shielding layer includes a sputter deposition process.
- In some embodiments, the frame has a rectangular shape configured to hold the individual dual-sided packages in a rectangular array. In some embodiments, the frame has a wafer-like format suitable for the sputter deposition process. In some embodiments, the individual dual-sided packages are arranged in a selected ring region on the wafer-like frame.
-
FIG. 1 illustrates a dual-sided package having a shielded package and a lower component mounted thereto, according to some implementations. -
FIG. 2 illustrates a dual-sided package having a shielded package and one or more lower components mounted within a volume defined on an underside of the shielded package, according to some implementations. -
FIG. 3 illustrates a shielded package as a wire-shielded package, according to some implementations. -
FIG. 4 illustrates a shielded package having a non-wire component that provides electrical connection between an upper conductive layer and a ground plane within a packaging substrate, according to some implementations. -
FIG. 5 illustrates a shielded package having a conformal conductive layer that is electrically connected to a ground plane within a packaging substrate, according to some implementations. -
FIG. 6A illustrates a side view of a dual-sided package, according to some implementations. -
FIG. 6B illustrates an underside view of a dual-sided package, according to some implementations. -
FIG. 6C illustrates a side view of a dual-sided package configured to provide shielding functionality, according to some implementations. -
FIG. 6D illustrates an underside view of a dual-sided package configured to provide shielding functionality, according to some implementations. -
FIG. 7A illustrates a dual-sided package implementing a BGA-mounted device and solder balls, according to some implementations. -
FIG. 7B illustrates a dual-sided package implementing a BGA-mounted device and pillars, according to some implementations. -
FIG. 8A illustrates a dual-sided package implementing a plurality of lower components, according to some implementations. -
FIG. 8B illustrates a dual-sided package implementing a plurality of lower components, according to some implementations. -
FIGS. 9A-9L illustrate various stages of fabrication processes for implementing dual-sided packages, according to some implementations. -
FIGS. 10A-10L illustrate various stages of fabrication processes for implementing dual-sided packages, according to some implementations. -
FIGS. 11A-11M illustrate various stages of fabrication processes for implementing dual-sided packages, according to some implementations. -
FIGS. 12A-12F illustrate various stages of fabrication processes for implementing dual-sided packages, according to some implementations. -
FIGS. 13A-13C illustrate various stages of forming dual-sided packages without conformal shielding, according to some implementations. -
FIGS. 14A-14D illustrate various stages of processing individual packages with a frame carrier, according to some implementations. -
FIG. 15 illustrates a dual-sided package having one or more surface-mount technology devices mounted on a packaging substrate, according to some implementations. -
FIG. 16 illustrates another dual-sided package having one or more surface-mount technology devices mounted on a packaging substrate, according to some implementations. -
FIG. 17 illustrates another dual-sided package having one or more surface-mount technology devices mounted on a packaging substrate, according to some implementations. -
FIG. 18A illustrates a top-down perspective view of an underside of a dual-sided package, according to some implementations. -
FIG. 18B illustrates a top-down perspective view of an underside of a dual-sided package, according to some implementations. -
FIG. 18C illustrates a bottom-up close-up perspective view of a portion of an underside of a dual-sided package, according to some implementations. -
FIG. 19 illustrates a dual-sided package implemented as a diversity receive module, according to some implementations. -
FIG. 20 illustrates a dual-sided package implemented in a wireless device, according to some implementations. - The headings provided herein, if any, are for convenience only and do not necessarily affect the scope or meaning of the claimed invention.
- The present disclosure relates to fabrication of packaged electronic modules such as radio-frequency (RF) modules. In radio-frequency (RF) applications, RF circuits and related devices can be implemented in a packaged module. Such a packaged module can then be mounted on a circuit board such as a phone board.
-
FIG. 1 shows a dual-sided package 100 having a shieldedpackage 102 and alower component 104 mounted thereto. For the purpose of description, a lower side of the shieldedpackage 102 can include aside 103 of a packaging substrate that is to be mounted onto a circuit board such as a phone board. Although not shown separately inFIG. 1 , it will be understood that the shieldedpackage 102 can include such a packaging substrate and one or more upper components mounted on its upper side (when oriented as shown inFIG. 1 ). Accordingly, the dual-side property can include such upper component(s) mounted over the substrate and lower component(s) mounted under the substrate. - For the purpose of description, it will be understood that a lower component can include any device that can be mounted on the substrate and/or the circuit board. Such a device can be an active radio-frequency (RF) device or a passive device that facilitates processing of RF signals. By way of non-limiting examples, such a device can include a die such as a semiconductor die, an integrated passive device (IPD), a surface-mount technology (SMT) device, and the like. In some embodiments, the lower component as described herein can be electrically coupled to the one or more upper component through, for example, the substrate.
-
FIG. 2 shows that in some embodiments, one or more lower components can be mounted under a shielded package, generally within a volume defined on an underside of the shielded package. In one embodiment, a set of through-mold connections (e.g., one or more through-mold connections) may be implemented, formed, located, and/or positioned on the underside (e.g.,side 103 illustrated inFIG. 1 ) of the shieldedpackage 102. The set of through-mold connections may define a volume on the underside of the shieldedpackage 102. InFIG. 2 , avolume 108 under a shieldedpackage 102 is shown to be defined by the underside of the shieldedpackage 102 andsolder balls 106 of a ball grid array (BGA). The BGA may be a set of through-mold connections. For example, eachsolder ball 106 of the BGA may be a through-mold connection in the set of through-mold connections. Other examples of through-mold connections include, but are not limited to solder balls, pillars, columns, posts, pedestals, etc. The through-mold connections described herein may also be referred to as contact features. Thesolder balls 106 are shown to allow the dual-sided package 100 to be mounted on acircuit board 110 such as a phone board. Thesolder balls 106 can be configured so that when mounted to thecircuit board 110, there is sufficient vertical space between the upper surface of thecircuit board 110 and the lower surface of the shieldedpackage 102 for thelower component 104. As illustrated inFIG. 2 , thevolume 108 is at least partially filled with anovermold 105. Theovermold 105 substantially encapsulates thelower component 104. In one embodiment, at least a portion of thesolder balls 106 may be exposed through theovermold 105. Exposing at least a portion of thesolder balls 106 may provide a connection (e.g., an electrical and/or thermal connection) through theovermold 105. For example, thesolder balls 106 may provide a connection (e.g., an electrical connection) to thelower component 104 and/or components in theshield package 102. In one embodiment, solder (or other conductive material) may be applied to the exposed portion of thesolder balls 106 to form a connection (e.g., electrical connection) with thecircuit board 110. Theovermold 105 may also be referred to as an overmold structure. In one embodiment, theovermold 105 and/or the solder balls 106 (e.g., the exposed portions of the solder balls 106) may form a land grid array (LGA) type/style package. - A close-up view of the
solder ball 106 is also illustrated inFIG. 2 . As illustrated in the close-up view of thesolder ball 106, the bottom of the shielded package includes apad 115. Thepad 115 may be a metallic pad (or some other material) that may provide electrical and/or thermal conductivity between thesolder ball 106 and components of theshield package 102 and/or thelower component 104.Solder mask 114 may be deposited over portions of thepad 115 to define a location where thesolder ball 106 may be formed. Thesolder ball 106 may be formed (e.g., implemented, formed, dropped, etc.) on top of thepad 115 and thesolder mask 114. - The dual-
sided package 100 may be installed on thecircuit board 110 using thesolder ball 106. Thesolder ball 106 may be attached to the circuit board 110 (e.g., may be installed, mounted, fixed, etc., to the circuit board 110) viaconnection 116. As illustrated in the close-up view of thesolder ball 106, theconnection 116 may includesolder material 121 andpad 119. Thesolder material 121 may be solder material from thesolder ball 106 that is deposited/melted onto thepad 119 when the dual-sided package 100 is attached to the circuit board. For example, during a reflow process, heat may be applied to melt at least a portion of thesolder ball 106 to form thesolder material 121. Thesolder material 121 may also include additional material that is formed, implemented, deposited, etc., over thesolder ball 106. For example, thesolder material 121 may includesolder material 118, illustrated inFIGS. 13B and 13C , and discussed in more detail below. Thepad 119 may be part of thecircuit board 110. Thepad 119 may provide electrical and/or thermal conductivity between the dual-sided package 100 and other components/circuits attached to the circuit board 110 (not illustrated in the figures). In one embodiment, thepad 119 may include solder material. - As illustrated in
FIG. 2 , theovermold 105 has a surface 112 (facing downward toward the circuit board 110). In one embodiment, thesurface 112 may not contact (e.g., may not physically touch) thesurface 113 of thecircuit board 110. As illustrated inFIG. 2 , agap 109 is present between thesurface 112 and thesurface 113. In one embodiment, thegap 109 may help protect thelower component 104 from damage when there are linear displacements of the dual-sided package 100 due to flexing or dropping. For example, thegap 109 may help protect thelower component 104 from damage as the dual-sided package 100 is installed on the circuit board 100 (e.g., may prevent thelower component 104 from contacting thesurface 113 of thecircuit board 110 during installation/mounting of the dual-sided package). The portion of theovermold material 105 that covers thelower component 104 may provide additional protection from damage when there are linear displacements of the dual-sided package 100 due to flexing or dropping. For example, theovermold material 105 may also prevent thelower component 104 from contacting thesurface 113 of thecircuit board 110 during installation/mounting of the dual-sided package. In another embodiment, thegap 109 may also allow the dual-sided package to adapt to process/manufacturing variations when the dual-sided package 100 is installed on thecircuit board 110. For example, different temperatures may be used to melt thesolder ball 106 during installation of the dual-sided package. Thegap 109 may help ensure that the dual-sided package is properly installed by providing enough distance between the surface 112 (of overmold 105) and the surface 113 (of circuit board 110) while still allowing the solder material of thesolder ball 106 to properly bond with thepad 119 of thecircuit board 110. In some embodiments, although theovermold 105 and/or thegap 109 may prevent thecomponent 104 from contacting the surface 113 (of the circuit board 110), the dual-sided package 100 and/or thecomponent 104 may still operate/function properly even if thecomponent 104 does contact thesurface 113. For example, thecomponent 104 may remain undamaged and/or operable even after contacting thesurface 113 of thecircuit board 110. - Examples related to fabrication of dual-sided packages having such a configuration are described herein in greater detail. It will be understood that although such examples are described in the context of solder balls, other types of connection features that provide sufficient vertical space can also be utilized. Although the embodiments, examples, configurations, and/or implementations disclosed herein may refer to solder balls and/or a BGA, one having ordinary skill in the art understands that solder balls and/or a BGA are examples of through-mold connections. One having ordinary skill in the art understands that other types of through-mold connections (e.g., pillars, columns, etc.,) may be used to define a volume on an underside of a shielded package and an overmold may be implemented in the volume (on the underside of the shielded package). In one embodiment, a through-mold connection (or a set of through-mold connections) may be any structure and/or component that may be used to define a volume on the underside of a shielded package and/or may be used to support the shielded package above a surface.
- Examples of Dual-Sided Packages with BGA
-
FIGS. 3-6 show non-limiting examples of dual-sided packages having BGAs.FIGS. 3-5 show examples of configurations of shielded packages that can be utilized.FIGS. 6A and 6B show an example of a BGA configuration that can be implemented.FIG. 6C and 6D show an example of a pillar based (e.g., post, column) configuration that can be implemented. -
FIG. 3 shows that in some embodiments, the shieldedpackage 102 ofFIG. 2 can be a wire-shieldedpackage 120. The wire-shieldedpackage 120 is shown to include a packaging substrate 122 (e.g., a laminate substrate) and a plurality of components mounted thereon. For example, afirst component 124 is depicted as being mounted on the upper surface of thepackaging substrate 122, and electrical connections between thecomponent 124 and thepackaging substrate 122 can be facilitated by, for example, wirebonds 128. In another example, asecond component 126 is shown to be mounted on the upper surface of thepackaging substrate 122 in a die-attach configuration. Electrical connections between thecomponent 126 and thepackaging substrate 122 can be facilitated by, for example, die-attach features. - In the example of
FIG. 3 , a plurality of shielding wires 130 (e.g. shielding wirebonds) are shown to be provided over thepackaging substrate 122.Such shielding wires 130 can be electrically connected to a ground plane (not shown) within thepackaging substrate 122. The shieldingwires 130 as well as the mountedcomponents overmold 132. The upper surface of theovermold 132 can be configured to expose the upper portions of the shieldingwires 130, and an upperconductive layer 134 can be formed thereon. Accordingly, a combination of the upperconductive layer 134, the shieldingwires 130, and the ground plane can define a shielded volume or region. Such a configuration can be implemented to provide shielding functionality between regions within and outside of the shieldedpackage 120, and/or between regions that are both within the shieldedpackage 120. Additional details concerning such shielding can be found in, for example, U.S. Pat. No. 8,373,264 entitled SEMICONDUCTOR PACKAGE WITH INTEGRATED INTERFERENCE SHIELDING AND METHOD OF MANUFACTURE THEREOF which is expressly incorporated by reference in its entirety for all purposes. - In the example of
FIG. 3 , an array ofsolder balls 106 is shown to be implemented on the underside of thepackaging substrate 122 so as to define an underside volume. Alower component 104 is shown to be mounted within such an underside volume to thereby form a dual-sided package 100. Anovermold 105 may be formed and/or implemented in the underside volume (where thelower component 104 is located) formed by the solder balls 106 (e.g., formed by a set of through-mold connections, such as a BGA). In one embodiment, theovermold 105 may encapsulate at least a portion of thelower component 104. For example, theovermold 105 may fully or partially encapsulate thelower component 104. In another embodiment, theovermold 105 may encapsulate at least a portion of the solder balls 106 (e.g., through-mold connections). For example, theovermold 105 may fully or partially encapsulate thesolder balls 106. InFIG. 3 , the dual-sided package 100 is shown to be mounted on acircuit board 110 such as a phone board. As discussed above, theovermold 105 and/or the solder balls 106 (e.g., the exposed portions of the solder balls 106) may form a land grid array (LGA) type/style package. As illustrated inFIG. 3 , thesolder balls 106 may have a semicircular shape. For example, the bottom portion of thesolder balls 106 may be removed to form the semicircular shape. The semicircular shape of thesolder balls 106 may be formed during a manufacturing process, as discussed in more detail below. - As illustrated in
FIG. 3 , the dual-sided package 100 may be attached to thecircuit board 110 viaconnections 116. A close-up view of thesolder balls 106 and theconnections 116, and additional details (of thesolder balls 106 and the connections 116) are illustrated/discussed above in conjunction withFIG. 2 . Also as illustrated inFIG. 3 , agap 109 is present between thesurface 112 and thesurface 113 of thecircuit board 110. Thegap 109 may help protect thelower component 104 from damage when there are linear displacements of the dual-sided package 100 due to flexing or dropping, as discussed above. Thegap 109 may also allow the dual-sided package to adapt to process/manufacturing variations when the dual-sided package 100 is installed on thecircuit board 110, as discussed above. -
FIG. 4 shows that in some embodiments, the shieldedpackage 102 ofFIG. 2 can be a shielded package 140 having anon-wire component 150 that provides electrical connection between an upperconductive layer 154 and a ground plane (not shown) within a packaging substrate 142 (e.g., a laminate substrate). In addition to thecomponent 150, thepackaging substrate 142 is shown to have a plurality of components mounted thereon. For example, afirst component 144 is depicted as being mounted on the upper surface of thepackaging substrate 142, and electrical connections between thecomponent 144 and thepackaging substrate 142 can be facilitated by, for example, wirebonds 148. In another example, asecond component 146 is shown to be mounted on the upper surface of thepackaging substrate 142 in a die-attach configuration. Electrical connections between thecomponent 146 and thepackaging substrate 142 can be facilitated by, for example, die-attach features. - In the example of
FIG. 4 , thecomponent 150 is shown to provide an electrical connection between the upperconductive layer 154 and the ground plane (not shown) within thepackaging substrate 142. Thecomponent 150 as well as the mountedcomponents overmold 152. The upper surface of theovermold 152 can be configured to expose the upper portion of thecomponent 150, and the upperconductive layer 154 can cover such an exposed portion as well as the remaining upper surface of theovermold 152. Accordingly, a combination of the upperconductive layer 154, thecomponent 150, and the ground plane can define a shielded volume or region. Such a configuration can be implemented to provide shielding functionality between regions within and outside of the shielded package 140, and/or between regions that are both within the shielded package 140. Additional details concerning such shielding can be found in, for example, U.S. patent application Ser. No. 14/252,719 filed on Apr. 14, 2014, entitled APPARATUS AND METHODS RELATED TO CONFORMAL COATING IMPLEMENTED WITH SURFACE MOUNT DEVICES, which is expressly incorporated by reference in its entirety. - In the example of
FIG. 4 , an array ofsolder balls 106 is shown to be implemented on the underside of thepackaging substrate 142 so as to define an underside volume. Alower component 104 is shown to be mounted within such an underside volume to thereby form a dual-sided package 100. Anovermold 105 may be formed and/or implemented in the underside volume (where thelower component 104 is located) formed by the solder balls 106 (e.g., formed by a set of through-mold connections, such as a BGA). In one embodiment, theovermold 105 may encapsulate at least a portion of thelower component 104. For example, theovermold 105 may fully or partially encapsulate thelower component 104. In another embodiment, theovermold 105 may encapsulate at least a portion of the solder balls 106 (e.g., through-mold connections). For example, theovermold 105 may fully or partially encapsulate thesolder balls 106. InFIG. 4 , the dual-sided package 100 is shown to be mounted on acircuit board 110 such as a phone board. As discussed above, theovermold 105 and/or the solder balls 106 (e.g., the exposed portions of the solder balls 106) may form a land grid array (LGA) type/style package. As illustrated inFIG. 4 , thesolder balls 106 may have a semicircular shape. For example, the bottom portion of thesolder balls 106 may be removed to form the semicircular shape. The semicircular shape of thesolder balls 106 may be formed during a manufacturing process, as discussed in more detail below. - As illustrated in
FIG. 4 , the dual-sided package 100 may be attached to thecircuit board 110 viaconnections 116. A close-up view of thesolder balls 106 and theconnections 116, and additional details (of thesolder balls 106 and the connections 116) are illustrated/discussed above in conjunction withFIG. 2 . Also as illustrated inFIG. 3 , agap 109 is present between thesurface 112 and thesurface 113 of thecircuit board 110. Thegap 109 may help protect thelower component 104 from damage when there are linear displacements of the dual-sided package 100 due to flexing or dropping, as discussed above. Thegap 109 may also allow the dual-sided package to adapt to process/manufacturing variations when the dual-sided package 100 is installed on thecircuit board 110, as discussed above. -
FIG. 5 shows that in some embodiments, the shieldedpackage 102 ofFIG. 2 can be a shieldedpackage 160 having a conformalconductive layer 174 that is electrically connected to a ground plane (not shown) within a packaging substrate 162 (e.g., a laminate substrate or a ceramic substrate). Thepackaging substrate 162 is shown to have a plurality of components mounted thereon. For example, afirst component 164 is depicted as being mounted on the upper surface of thepackaging substrate 162, and electrical connections between thecomponent 164 and thepackaging substrate 162 can be facilitated by, for example, wirebonds 168. In another example, asecond component 166 is shown to be mounted on the upper surface of thepackaging substrate 162 in a die-attach configuration. Electrical connections between thecomponent 166 and thepackaging substrate 162 can be facilitated by, for example, die-attach features. - In the example of
FIG. 5 , the mountedcomponents overmold 172. The conformalconductive layer 174 is shown to generally cover the upper surface of theovermold 172, as well as side walls (e.g., all four side walls) defined by the sides of theovermold 172 and thepackaging substrate 162. Thepackaging substrate 162 is shown to includeconductive features 170 having portions exposed on the sides of the packaging substrate, and also electrically connected to the ground plane (not shown), to thereby provide electrical connections between the conformalconductive layer 174 and the ground plane. Accordingly, a combination of the conformalconductive layer 174 and the ground plane can define a shielded volume or region. Such a configuration can be implemented to provide shielding functionality on one or more sides of the shieldedpackage 160. Additional details concerning such shielding can be found in, for example, U.S. patent application Ser. No. 14/528,447 filed on Oct. 30, 2014, entitled DEVICES AND METHODS RELATED TO PACKAGING OF RADIO-FREQUENCY DEVICES ON CERAMIC SUBSTRATES, which is also expressly incorporated by reference in its entirety for all purposes. In some embodiments, theovermold 172 may not be present (e.g., theovermold 172 may be optional). For example, when thepackaging substrate 162 is a ceramic substrate, theovermold 172 may not be present. - In the example of
FIG. 5 , an array ofsolder balls 106 is shown to be implemented on the underside of thepackaging substrate 162 so as to define an underside volume. Alower component 104 is shown to be mounted within such an underside volume to thereby form a dual-sided package 100. Anovermold 105 may be formed and/or implemented in the underside volume (where thelower component 104 is located) formed by the solder balls 106 (e.g., formed by a set of through-mold connections, such as a BGA). In one embodiment, theovermold 105 may encapsulate at least a portion of thelower component 104. For example, theovermold 105 may fully or partially encapsulate thelower component 104. In another embodiment, theovermold 105 may encapsulate at least a portion of the solder balls 106 (e.g., through-mold connections). For example, theovermold 105 may fully or partially encapsulate thesolder balls 106. InFIG. 5 , the dual-sided package 100 is shown to be mounted on acircuit board 110 such as a phone board. As discussed above, theovermold 105 and/or the solder balls 106 (e.g., the exposed portions of the solder balls 106) may form a land grid array (LGA) type/style package. As illustrated inFIG. 5 , thesolder balls 106 may have a semicircular shape. For example, the bottom portion of thesolder balls 106 may be removed to form the semicircular shape. The semicircular shape of thesolder balls 106 may be formed during a manufacturing process, as discussed in more detail below. - As illustrated in
FIG. 5 , the dual-sided package 100 may be attached to thecircuit board 110 viaconnections 116. A close-up view of thesolder balls 106 and theconnections 116, and additional details (of thesolder balls 106 and the connections 116) are illustrated/discussed above in conjunction withFIG. 2 . Also as illustrated inFIG. 3 , agap 109 is present between thesurface 112 and thesurface 113 of thecircuit board 110. Thegap 109 may help protect thelower component 104 from damage when there are linear displacements of the dual-sided package 100 due to flexing or dropping, as discussed above. Thegap 109 may also allow the dual-sided package to adapt to process/manufacturing variations when the dual-sided package 100 is installed on thecircuit board 110, as discussed above. - In the examples of
FIGS. 3-5 , thesolder balls 106 are depicted as being implemented in a single row that forms a perimeter at an underside of the shielded package. If such solder balls are utilized as input and/or output for processing of radio-frequency (RF) signals, it may be desirable to provide shielding between such input/output solder balls and locations outside of the dual-sided package 100. Furthermore, it shall be understood that in other embodiments, any of the shielding features ofFIGS. 3, 4 , and/or 5 may be combined. For example, two or more of the shieldingwires 130 illustrated inFIG. 3 , thecomponent 150 illustrated inFIG. 4 , and the conformalconductive layer 174 illustrated inFIG. 5 , may be combined. -
FIGS. 6A and 6B show side and underside views of a dual-sided package 100 configured to provide such shielding functionality. In the example ofFIGS. 6A and 6B , two rows of solder balls can be implemented. The inner row ofsolder balls 106 a can be utilized for input and/or output of RF signals, or for any other input/output where shielding is desired. The outer row ofsolder balls 106 b can be utilized for, for example, grounding of the dual-sided package 100, and can be electrically connected to the ground plane of the shieldedpackage 102. Accordingly, the outer row ofsolder balls 106 b can provide shielding for the inner row ofsolder balls 106 a. The outer row ofsolder balls 106 b can also provide shielding for thelower component 104. - In the example of
FIGS. 6A and 6B , each of the inner and outer rows ofsolder balls package 102. However, it will be understood that either or both of the inner and outer rows ofsolder balls solder balls 106 b may not be needed. Accordingly, one or more sides of outer row ofsolder balls 106 b can be implemented to provide such shielding functionality. In another example, input/output connections (e.g., RF input/output, control signals, power) may not need a full perimeter of inner row ofsolder balls 106 a. Accordingly, the inner row ofsolder balls 106 a can form a partial perimeter on the underside of the shieldedpackage 102. Furthermore, the examples ofFIGS. 6A and 6B may illustrate views of the dual-sided package 100 before the overmold (e.g., overmold 105 illustrated inFIG. 2 ) is implemented and/or formed on the underside of the shieldedpackage 102. -
FIGS. 6C and 6D show side and underside views of a dual-sided package 100 configured to provide such shielding functionality. In the example ofFIGS. 6C and 6D , two rows of pillars (e.g., columns, posts, etc.) can be implemented. The inner row ofpillars 111 a can be utilized for input and/or output of RF signals, or for any other input/output where shielding is desired. The outer row ofpillars 111 b can be utilized for, for example, grounding of the dual-sided package 100, and can be electrically connected to the ground plane of the shieldedpackage 102. Accordingly, the outer row ofpillars 111 b can provide shielding for the inner row ofpillars 111 a. The outer row ofpillars 111 b can also provide shielding for thelower component 104. - In the example of
FIGS. 6C and 6D , each of the inner and outer rows ofpillars package 102. However, it will be understood that either or both of the inner and outer rows ofpillars pillars 111 b may not be needed. Accordingly, one or more sides of outer row ofpillars 111 b can be implemented to provide such shielding functionality. In another example, input/output connections (e.g., RF input/output, control signals, power) may not need a full perimeter of inner row ofpillars 111 a. Accordingly, the inner row ofpillars 111 a can form a partial perimeter on the underside of the shieldedpackage 102. Furthermore, the examples ofFIGS. 6C and 6D may illustrate views of the dual-sided package 100 before the overmold (e.g., overmold 105 illustrated inFIG. 2 ) is implemented and/or formed on the underside of the shieldedpackage 102. -
FIG. 7A illustrates a dual-sided package 100 that is similar to the BGA-based example ofFIG. 2 . Anovermold 105 may be formed and/or implemented in the underside volume (where thelower component 104 is located) formed by the solder balls (e.g., formed by a set of through-mold connections, such as a BGA). In one embodiment, theovermold 105 may encapsulate at least a portion of thelower component 104. For example, theovermold 105 may fully or partially encapsulate thelower component 104. In another embodiment, theovermold 105 may encapsulate at least a portion of the solder balls (e.g., through-mold connections). For example, theovermold 105 may fully or partially encapsulate the solder balls. As discussed above, theovermold 105 and/or the solder balls 106 (e.g., the exposed portions of the solder balls 106) may form a land grid array (LGA) type/style package. As illustrated inFIG. 7A , thesolder balls 106 may have a semicircular shape. For example, the bottom portion (e.g., bottom half) of thesolder balls 106 may be removed to form the semicircular shape. The semicircular shape of thesolder balls 106 may be formed during a manufacturing process, as discussed in more detail below. In one embodiment, exposing a portion of thesolder balls 106 through theovermold 105 may allow thesolder balls 106 to provide a connection (e.g., a through-mold connection, an electrical connection) to components of the dual-sided package 100. A close-up view of thesolder balls 106 and additional details (of the solder balls 106) are illustrated/discussed above in conjunction withFIG. 2 . -
FIG. 7B illustrates a pillar-based example of a dual-sided package 100. Anovermold 105 may be formed and/or implemented in the underside volume (where thelower component 104 is located) formed by the pillars 111 (e.g., through-mold connections). In one embodiment, theovermold 105 may encapsulate at least a portion of thelower component 104. For example, theovermold 105 may fully or partially encapsulate thelower component 104. In another embodiment, theovermold 105 may encapsulate at least a portion of thepillars 111. Portions of the pillars 111 (e.g., the upper surfaces of the pillars 111) may be exposed through theovermold 105. As discussed above, theovermold 105 and/or thepillars 111 may form a land grid array (LGA) type/style package. In one embodiment, exposing a portion of thepillars 111 through theovermold 105 may allow thepillars 111 to provide a connection (e.g., a through-mold connection, an electrical connection) to components of the dual-sided package 100. -
FIG. 8A shows that in some embodiments, a dual-sided package can include a plurality of lower components. InFIG. 8A , a dual-sided package 100 is similar to the BGA-based example ofFIG. 2 . The dual-sided package 100 is shown to include twolower components package 102. Anovermold 105 may be formed and/or implemented in the underside volume (where thelower components overmold 105 may encapsulate at least a portion of thelower component 104. For example, theovermold 105 may fully or partially encapsulate thelower component 104. In another embodiment, theovermold 105 may encapsulate at least a portion of the solder balls (e.g., through-mold connections). For example, theovermold 105 may fully or partially encapsulate the solder balls. As discussed above, theovermold 105 and/or the solder balls 106 (e.g., the exposed portions of the solder balls 106) may form a land grid array (LGA) type/style package. As illustrated inFIG. 8A , thesolder balls 106 may have a semicircular shape. For example, the bottom portion of thesolder balls 106 may be removed to form the semicircular shape. The semicircular shape of thesolder balls 106 may be formed during a manufacturing process, as discussed in more detail below. In one embodiment, exposing a portion of thesolder balls 106 through theovermold 105 may allow thesolder balls 106 to provide a connection (e.g., a through-mold connection, an electrical connection) to components of the dual-sided package 100. A close-up view of thesolder balls 106 and additional details (of the solder balls 106) are illustrated/discussed above in conjunction withFIG. 2 . -
FIG. 8B shows that in some embodiments, a dual-sided package can include a plurality of lower components. InFIG. 8B , the dual-sided package 100 may be a pillar-based example. The dual-sided package 100 is shown to include twolower components package 102. Anovermold 105 may be formed and/or implemented in the underside volume (where thelower components overmold 105 may encapsulate at least a portion of thelower component 104. For example, theovermold 105 may fully or partially encapsulate thelower component 104. In another embodiment, theovermold 105 may encapsulate at least a portion of the solder balls. Portions of the pillars 111 (e.g., the upper surfaces of the pillars 111) may be exposed through theovermold 105. As discussed above, theovermold 105 and/or thepillars 111 may form a land grid array (LGA) type/style package. In one embodiment, exposing a portion of thepillars 111 through theovermold 105 may allow thepillars 111 to provide a connection (e.g., a through-mold connection, an electrical connection) to components of the dual-sided package. - Other additional features, variations, or any combination thereof, can be also be implemented.
-
FIGS. 9-14 show examples of how dual-sided packages can be fabricated. As described herein, such examples can facilitate mass-production of dual-sided packages. -
FIGS. 9-13 show various stages of a fabrication process in which substantially all of dual-sided features can be implemented in a panel format having an array of to-be-separated units, before such units are separated (also referred to as singulated). Although described in the context of BGA-based and/or pillar (e.g., column, posts, etc.) based dual-sided packages, it will be understood that one or more features of the fabrication technique ofFIGS. 9-13 can also be implemented for fabrication of dual-sided packages having other types of mounting features. In some implementations, the fabrication processes ofFIGS. 9-14 can be utilized for manufacturing of dual-sided packages described herein in reference to, for example,FIGS. 3, 4, 5, 7A, 7B, 8A, 8B, 15, 16 , and/or 17. - Referring to
FIG. 9A , afabrication state 250 a can include apanel 252 having a plurality of to-be-singulated units. For example, singulation can occur at boundaries depicted by dashedlines 260 so at to yield singulated individual units. Thepanel 252 is shown to include asubstrate panel 254 on which upper portions (collectively indicated as 256) are formed. Each unit of such an upper-portion panel can include various parts described herein in reference toFIGS. 3, 4 , and/or 5. For example, each unit of such an upper-portion panel may include shielding features ofFIGS. 3, 4 , and/or 5. Such parts can include various components and shielding structures mounted or implemented on thesubstrate panel 254. The upper-portion panel 256 can also include an overmold layer which can be formed as a common layer for a number of individual units. Similar to the common overmold layer, an upperconductive layer 258 can be formed to cover a number of individual units. - Referring to
FIG. 9B , afabrication state 262 a can include thepanel 252 ofFIG. 9A being inverted so that its underside faces upward. Such an inverted orientation can allow processing of the underside while the individual units are still attached in the panel. - Referring to
FIG. 9C , afabrication state 263 a can include alower component 104 being attached for each unit on the underside (which is facing upward) of thesubstrate 254. Thefabrication state 263 a may also include an array ofsolder balls 106 being formed for each unit on the underside (which is facing upward) of thesubstrate 254. Such a step is shown to yield an array of dual-sided units to be singulated. It will be understood that thelower component 104 may be attached for each unit (on the underside) after the array ofsolder balls 106 is formed, or vice versa. It shall also be understood that the lower component (for each unit on the underside) and the array ofsolder balls 106 may be attached, implemented, and/or formed substantially simultaneously. - Referring to
FIG. 9D , afabrication state 264 a can include implementing and/or formingovermold 105 on the underside (which is facing upward) of thesubstrate 254. In one embodiment, theovermold 105 may completely encapsulate thelower component 104 and the solder balls 106 (e.g., the through-mold connections) in thefabrication state 264 a. - Referring to
FIG. 9E , afabrication state 266 a can include removing at least a portion of theovermold 105. For example, an outward surface (e.g., the upper surface) of theovermold 105 may be removed. Removing at least the portion of theovermold 105 may expose thesolders balls 106 through theovermold 105. For example, theovermold 105 may partially encapsulate thesolder balls 106 after the portion of theovermold 105 is removed. The portion of theovermold 105 may be removed using various different types of processes and/or methods. For example, theovermold 105 may be ground (with an abrasive surface) to remove the portion of the overmold 105 (to expose a portion of the solder balls 106). In another example, the portion of theovermold 105 may be removed using a laser to melt and/or burn the portion of the overmold 105 (to expose a portion of the solder balls 106). In a further example, the portion of theovermold 105 may be ablated. For example, a stream of particles (e.g., water particles, sand particles, etc.) may be used to erode the portion of theovermold 105. In one embodiment, removing the portion of theovermold 105 may also remove a portion of thesolder balls 106. For example, ablating theovermold 105 may remove the top portions of thesolder balls 106 to form the semicircular shape illustrated inFIGS. 9E and 9F . This may also expose a portion of thesolder balls 106 through theovermold 105 and may allow thesolder balls 106 to provide a connection (e.g., an electrical connection) through theovermold 105. - Referring to
FIG. 9F , afabrication state 268 a can include individual units being singulated to yield a plurality of dual-sidedpackages 100 substantially ready to be mounted to circuit boards. It will be understood that such a singulation process can be achieved while the panel (252) is in its inverted orientation (as shown in the example ofFIG. 9E ), or while the panel (252) is in its upright orientation (e.g., as in the example ofFIG. 9A ). A close-up view of thesolder balls 106 and additional details (of the solder balls 106) are illustrated/discussed above in conjunction withFIG. 2 . - Referring to
FIG. 9G , afabrication state 250 b can include apanel 252 having a plurality of to-be-singulated units. For example, singulation can occur at boundaries depicted by dashedlines 260 so at to yield singulated individual units. Thepanel 252 is shown to include asubstrate panel 254 on which upper portions (collectively indicated as 256) are formed. Each unit of such an upper-portion panel can include various parts described herein in reference toFIGS. 3, 4 , and/or 5. For example, each unit of such an upper-portion panel may include shielding features ofFIGS. 3, 4 , and/or 5. Such parts can include various components and shielding structures mounted or implemented on thesubstrate panel 254. The upper-portion panel 256 can also include an overmold layer which can be formed as a common layer for a number of individual units. Similar to the common overmold layer, an upperconductive layer 258 can be formed to cover a number of individual units. - Referring to
FIG. 9H , afabrication state 262 b can include thepanel 252 ofFIG. 9A being inverted so that its underside faces upward. Such an inverted orientation can allow processing of the underside while the individual units are still attached in the panel. - Referring to
FIG. 91 , afabrication state 263 b can include alower component 104 being attached for each unit on the underside (which is facing upward) of thesubstrate 254. Thefabrication state 263 b may also include an array ofpillars 111 being formed for each unit on the underside (which is facing upward) of thesubstrate 254. Such a step is shown to yield an array of dual-sided units to be singulated. It will be understood that thelower component 104 may be attached for each unit (on the underside) after the array ofpillars 111 are formed, or vice versa. It shall also be understood that the lower component (for each unit on the underside) and the array ofpillars 111 may be attached, implemented, and/or formed substantially simultaneously. Thepillars 111 may be formed using various methods, processes, technologies, etc., such as copper pillar bumping. - Referring to
FIG. 9J , afabrication state 264 b can include implementing and/or formingovermold 105 on the underside (which is facing upward) of thesubstrate 254. In one embodiment, theovermold 105 may completely encapsulate thelower component 104 and the pillars 111 (e.g., the through-mold connections) in thefabrication state 264 b. - Referring to
FIG. 9K , afabrication state 266 b can include removing at least a portion of theovermold 105. For example, an outward surface (e.g., the upper surface) of theovermold 105 may be removed. Removing at least the portion of theovermold 105 may expose thesolders balls 106 through theovermold 105. For example, theovermold 105 may partially encapsulate thesolder balls 106 after the portion of theovermold 105 is removed. The portion of theovermold 105 may be removed using various different types of processes and/or methods. For example, theovermold 105 may be ground (with an abrasive surface) to remove the portion of the overmold 105 (to expose a portion of the solder balls 106). In another example, the portion of theovermold 105 may be removed using a laser to melt and/or burn the portion of the overmold 105 (to expose a portion of the solder balls 106). In a further example, the portion of theovermold 105 may be ablated. For example, a stream of particles (e.g., water particles, sand particles, etc.) may be used to erode the portion of theovermold 105. In one embodiment, removing the portion of theovermold 105 may also remove a portion of thepillars 111. For example, ablating theovermold 105 may remove the top portions of thepillars 111. This may also expose a portion of thepillars 111 through theovermold 105 and may allow thepillars 111 to provide a connection (e.g., an electrical connection) through theovermold 105. - Referring to
FIG. 9L , afabrication state 268 b can include individual units being singulated to yield a plurality of dual-sidedpackages 100 substantially ready to be mounted to circuit boards. It will be understood that such a singulation process can be achieved while the panel (252) is in its inverted orientation (as shown in the example ofFIG. 9K ), or while the panel (252) is in its upright orientation (e.g., as in the example ofFIG. 9G ). - As described herein, such processing of most or all of upper and lower sides of a substrate panel can be achieved since the side walls of the dual-sided packages are not utilized for shielding. However, when one or more side walls include shielding features, at least some of processing related to shielding need to be implemented with the corresponding side walls exposed. In some embodiments (e.g., where all four side walls include shielding features), at least some processing need to be performed on singulated units.
- In the examples described in reference to
FIGS. 9A-9L ,FIGS. 10-10L ,FIGS. 11A-11M ,FIGS. 12A-12F , andFIGS. 13A-13C , substantially all steps in fabrication of dual-sided packages can be performed in a panel format before individual units are singulated. For the examples ofFIGS. 14A-14D , the forming of the conductive layer on each unit may be performed after a singulation step/process. -
FIGS. 10-10L ,FIGS. 11A-11M ,FIGS. 12A-12F ,FIGS. 13A-13C andFIGS. 14A-14D show examples related a process for manufacturing conformal-shielded dual-sided packages. In such a process, singulation can be performed after process steps (e.g., mounting of a lower component and formation of a BGA) are performed on the underside of a packaging substrate. More particularly,FIGS. 10-10L ,FIGS. 11A-11M ,FIGS. 12A-12F , andFIGS. 13A-13C show various example states leading to formation of dual-sided packages without conformal shielding.FIGS. 14A-14D show examples related to how conformal shielding can be formed for such dual-sided packages. - In some embodiments, the examples process steps of
FIGS. 10A-10F can be similar to the examples ofFIGS. 9A-9F , but without the conductive layer (258). Referring toFIG. 10A , afabrication state 350 a can include apanel 352 having a plurality of to-be-singulated units. For example, singulation can occur at boundaries depicted by dashedlines 360 so at to yield singulated individual units. Thepanel 352 is shown to include asubstrate panel 354 on which upper portions (collectively indicated as 356) are formed. Each unit of such an upper-portion panel can include various parts described herein in reference to any combination ofFIGS. 3, 4, and 5 . Such parts can include various components and shielding structures mounted or implemented on thesubstrate panel 354. The upper-portion panel 356 can also include an overmold layer which can be formed as a common layer for a number of individual units. In the example ofFIG. 10A ,conductive features 378 are shown to be implemented within thesubstrate panel 354. Eachconductive feature 378 can straddle thecorresponding boundary 360, such than when separation occurs at theboundary 360, each of the two exposed side walls of the substrates includes an exposed portion of theconductive feature 378 that has been cut. Each of such cut conductive feature is electrically connected to a ground plane (not shown) within the corresponding substrate. - Referring to
FIG. 10B , afabrication state 362 a can include thepanel 352 ofFIG. 10A being inverted so that its underside faces upward. Such an inverted orientation can allow processing of the underside while the individual units are still attached in the panel. - Referring to
FIG. 10C , a fabrication state 364 a can include alower component 104 being attached for each unit on the underside (which is facing upward) of thesubstrate 354. Fabrication state 364 a can also include an array ofsolder balls 106 being formed for each unit on the underside (which is facing upward) of thesubstrate 354. It shall be understood that thelower component 104 may be attached for each unit (on the underside) after the array ofsolder balls 106 is formed, or vice versa. It shall also be understood that the lower component 104 (for each unit on the underside) and the array ofsolder balls 106 may be attached, implemented, and/or formed substantially simultaneously. - Referring to
FIG. 10D , a fabrication state 366 a can include implementing anovermold 105 over the array ofsolder balls 106 and thelower components 104. In one embodiment, theovermold 105 may completely encapsulate thelower component 104 and the solder balls 106 (e.g., the through-mold connections) in the fabrication state 366 a. - Referring to
FIG. 10E , afabrication state 367 a can include removing at least a portion of theovermold 105. For example, an outward surface (e.g., the upper surface) of theovermold 105 may be removed. Removing at least the portion of theovermold 105 may expose thesolders balls 106 through theovermold 105. For example, theovermold 105 may partially encapsulate thesolder balls 106 after the portion of theovermold 105 is removed. The portion of theovermold 105 may be removed using various different types of processes and/or methods. For example, theovermold 105 may be ground (with an abrasive surface) to remove the portion of the overmold 105 (to expose a portion of the solder balls 106). In another example, the portion of theovermold 105 may be removed using a laser to melt and/or burn the portion of the overmold 105 (to expose a portion of the solder balls 106). In a further example, the portion of theovermold 105 may be ablated. For example, a stream of particles (e.g., water particles, sand particles, etc.) may be used to erode the portion of theovermold 105. Such a step is shown to yield an array of un-shielded dual-sided units to be singulated. In one embodiment, removing the portion of theovermold 105 may also remove a portion of thesolder balls 106. For example, ablating theovermold 105 may remove the top portions of thesolder balls 106 to form the semicircular shape illustrated inFIGS. 10E and 10F . This may also expose a portion of thesolder balls 106 through theovermold 105 and may allow thesolder balls 106 to provide a connection (e.g., an electrical connection) through theovermold 105. - Referring to
FIG. 10F , a fabrication state 368 a can include individual units being singulated to yield a plurality of un-shielded dual-sidedpackages 370 substantially ready for conformal shielding process steps, or if shielding is not needed, substantially ready to be mounted to circuit boards. As described above, each of the dual-sidedpackages 370 includes side walls; and each side wall is shown to include an exposed portion of the cutconductive feature 378. In some embodiments, such a singulation process can be achieved while the panel (352) is in its inverted orientation (as shown in the example ofFIG. 10E ), or while the panel (352) is in its upright orientation (e.g., as in the example ofFIG. 10A ). A close-up view of thesolder balls 106 and additional details (of the solder balls 106) are illustrated/discussed above in conjunction withFIG. 2 . - In some embodiments, the examples process steps of
FIGS. 10G-10L can be similar to the examples ofFIGS. 9G-9L , but without the conductive layer (258). Referring toFIG. 10G , afabrication state 350 b can include apanel 352 having a plurality of to-be-singulated units. For example, singulation can occur at boundaries depicted by dashedlines 360 so at to yield singulated individual units. Thepanel 352 is shown to include asubstrate panel 354 on which upper portions (collectively indicated as 356) are formed. Each unit of such an upper-portion panel can include various parts described herein in reference to any combination ofFIGS. 3, 4, and 5 . Such parts can include various components and shielding structures mounted or implemented on thesubstrate panel 354. The upper-portion panel 356 can also include an overmold layer which can be formed as a common layer for a number of individual units. In the example ofFIG. 10G ,conductive features 378 are shown to be implemented within thesubstrate panel 354. Eachconductive feature 378 can straddle thecorresponding boundary 360, such than when separation occurs at theboundary 360, each of the two exposed side walls of the substrates includes an exposed portion of theconductive feature 378 that has been cut. Each of such cut conductive feature is electrically connected to a ground plane (not shown) within the corresponding substrate. - Referring to
FIG. 10H , afabrication state 362 b can include thepanel 352 ofFIG. 10G being inverted so that its underside faces upward. Such an inverted orientation can allow processing of the underside while the individual units are still attached in the panel. - Referring to
FIG. 101 , afabrication state 364 b can include alower component 104 being attached for each unit on the underside (which is facing upward) of thesubstrate 354.Fabrication state 364 b can also include an array ofpillars 111 being formed for each unit on the underside (which is facing upward) of thesubstrate 354. It shall be understood that thelower component 104 may be attached for each unit (on the underside) after the array ofpillars 111 is formed, or vice versa. It shall also be understood that the lower component 104 (for each unit on the underside) and the array ofpillars 111 may be attached, implemented, and/or formed substantially simultaneously. - Referring to
FIG. 10J , afabrication state 366 b can include implementing anovermold 105 over the array ofpillars 111 and thelower components 104. In one embodiment, theovermold 105 may completely encapsulate thelower component 104 and the pillars 111 (e.g., the through-mold connections) in thefabrication state 366 b. - Referring to
FIG. 10K , afabrication state 367 b can include removing at least a portion of theovermold 105. For example, an outward surface (e.g., the upper surface) of theovermold 105 may be removed. Removing at least the portion of theovermold 105 may expose thepillars 111 through theovermold 105. For example, theovermold 105 may partially encapsulate thepillars 111 after the portion of theovermold 105 is removed. The portion of theovermold 105 may be removed using various different types of processes and/or methods. For example, theovermold 105 may be ground (with an abrasive surface) to remove the portion of the overmold 105 (to expose a portion of the pillars 111). In another example, the portion of theovermold 105 may be removed using a laser to melt and/or burn the portion of the overmold 105 (to expose a portion of the pillars 111). In a further example, the portion of theovermold 105 may be ablated. For example, a stream of particles (e.g., water particles, sand particles, etc.) may be used to erode the portion of theovermold 105. Such a step is shown to yield an array of un-shielded dual-sided units to be singulated. In one embodiment, removing the portion of theovermold 105 may also remove a portion of thepillars 111. For example, ablating theovermold 105 may remove the top portions of thepillars 111. This may also expose a portion of thepillars 111 through theovermold 105 and may allow thepillars 111 to provide a connection (e.g., an electrical connection) through theovermold 105. - Referring to
FIG. 10L , a fabrication state 368 a can include individual units being singulated to yield a plurality of un-shielded dual-sidedpackages 370 substantially ready for conformal shielding process steps, or if shielding is not needed, substantially ready to be mounted to circuit boards. As described above, each of the dual-sidedpackages 370 includes side walls; and each side wall is shown to include an exposed portion of the cutconductive feature 378. In some embodiments, such a singulation process can be achieved while the panel (352) is in its inverted orientation (as shown in the example ofFIG. 10K ), or while the panel (352) is in its upright orientation (e.g., as in the example ofFIG. 10G ). -
FIGS. 11A-11G show various example states leading to formation of dual-sided packages without conformal shielding. Referring toFIG. 11A , afabrication state 1105 can include apanel 352 having a plurality of to-be-singulated units. For example, singulation can occur at boundaries depicted by dashedlines 360 so at to yield singulated individual units. Thepanel 352 is shown to include asubstrate panel 354 on which upper portions (collectively indicated as 356) are formed. Each unit of such an upper-portion panel can include various parts described herein in reference to any combination ofFIGS. 3, 4, and 5 . Such parts can include various components and shielding structures mounted or implemented on thesubstrate panel 354. The upper-portion panel 356 can also include an overmold layer which can be formed as a common layer for a number of individual units. In the example ofFIG. 11A ,conductive features 378 are shown to be implemented within thesubstrate panel 354. Eachconductive feature 378 can straddle thecorresponding boundary 360, such than when separation occurs at theboundary 360, each of the two exposed side walls of the substrates includes an exposed portion of theconductive feature 378 that has been cut. Each of such cut conductive feature is electrically connected to a ground plane (not shown) within the corresponding substrate. - Referring to
FIG. 11B , afabrication state 1110 can include thepanel 352 ofFIG. 11A being inverted so that its underside faces upward. Such an inverted orientation can allow processing of the underside while the individual units are still attached in the panel. - Referring to
FIG. 11C , afabrication state 1115 can include alower component 104 being attached for each unit on the underside (which is facing upward) of thesubstrate 354. For example, thelower component 104 may be mounted, installed, etc., to the underside of thesubstrate 354. Thelower component 104 may be directly attached to the substrate or may be attached to other components (e.g., one or more metal pads) on thesubstrate 354. - Referring to
FIG. 11D , afabrication state 1120 can include implementing anovermold 105 over thelower components 104. In one embodiment, theovermold 105 may completely encapsulate thelower component 104 in thefabrication state 1120. - Referring to
FIG. 11E , afabrication state 1125 can include forming a plurality of cavities 1126 (e.g., holes, voids, spaces, gaps, etc.) in theovermold 105. Thecavities 1126 may have a partial conical shape (e.g., a cone shape with the top and bottom portions of the cone removed). As illustrated inFIG. 11E , thecavities 1126 may have a trapezoidal shape when viewed from the side (e.g., a profile view). One having ordinary skill in the art understands that thecavities 1126 may have various sizes and/or shapes. For example, thecavities 1126 may be cylinder shaped, cubed shaped, trapezoid prism shaped, etc. In one embodiment, thecavities 1126 may be forming using a laser (e.g., a laser drill). For example, a laser may be used to burn and/or melt portions of theovermold 105 to form thecavities 1126. One having ordinary skill in the art understands that various other methods, processes, and/or operations may be used to form thecavities 1126. - Referring to
FIG. 11F , afabrication state 1130 can include forming a plurality of solder balls 106 (e.g., through-mold connections) within thecavities 1126. For example, solder material (e.g., a conductive material that may melt at a certain temperature) may be deposited into thecavities 1126. In one embodiment, the height of thesolder balls 106 may be lower than the height of theovermold 105. In another embodiment, the height of the solder balls may be equal (or substantially equal) to the height of theovermold 105. In another embodiment, the height of the solder may be higher than the height of theovermold 105. As illustrated inFIG. 11F , there may be a gap between theovermold 105 and the top of thesolder balls 106. For example, the angle of the sides of the cavities 1126 (e.g., the side walls of the cavities 1126) may result in the gap between theovermold 105 and the top of thesolder balls 106. This may be due to the shape/size of thecavities 1126 and the shape/size of thesolder balls 106. In other embodiments, the gap between theovermold 105 and the top of thesolder balls 106 may be larger, smaller, or may not be present, based on the shape/size of thecavities 1126 and the shape/size of thesolder balls 106. - Referring to
FIG. 11G , afabrication state 1135 can include individual units being singulated to yield a plurality of un-shielded dual-sidedpackages 1190 substantially ready for conformal shielding process steps, or if shielding is not needed, substantially ready to be mounted to circuit boards. As described above, each of the dual-sidedpackages 1190 includes side walls; and each side wall is shown to include an exposed portion of the cutconductive feature 378. In some embodiments, such a singulation process can be achieved while the panel (352) is in its inverted orientation (as shown in the example ofFIG. 11F ), or while the panel (352) is in its upright orientation (e.g., as in the example ofFIG. 11A ). A close-up view of thesolder balls 106 and additional details (of the solder balls 106) are illustrated/discussed above in conjunction withFIG. 2 . -
FIGS. 11H-11M show various example states leading to formation of dual-sided packages without conformal shielding. Referring toFIG. 11H , afabrication state 1155 can include apanel 352 having a plurality of to-be-singulated units. For example, singulation can occur at boundaries depicted by dashedlines 360 so at to yield singulated individual units. Thepanel 352 is shown to include asubstrate panel 354 on which upper portions (collectively indicated as 356) are formed. Each unit of such an upper-portion panel can include various parts described herein in reference to any combination ofFIGS. 3, 4, and 5 . Such parts can include various components and shielding structures mounted or implemented on thesubstrate panel 354. The upper-portion panel 356 can also include an overmold layer which can be formed as a common layer for a number of individual units. In the example ofFIG. 11H ,conductive features 378 are shown to be implemented within thesubstrate panel 354. Eachconductive feature 378 can straddle thecorresponding boundary 360, such than when separation occurs at theboundary 360, each of the two exposed side walls of the substrates includes an exposed portion of theconductive feature 378 that has been cut. Each of such cut conductive feature is electrically connected to a ground plane (not shown) within the corresponding substrate. - Referring to
FIG. 11I , afabrication state 1160 can include thepanel 352 ofFIG. 11A being inverted so that its underside faces upward. Such an inverted orientation can allow processing of the underside while the individual units are still attached in the panel. - Referring to
FIG. 11J , afabrication state 1165 can include alower component 104 being attached for each unit on the underside (which is facing upward) of thesubstrate 254. Thefabrication state 1165 may also include an array ofsolder balls 106 being formed for each unit on the underside (which is facing upward) of thesubstrate 254. Such a step is shown to yield an array of dual-sided units to be singulated. It will be understood that thelower component 104 may be attached for each unit (on the underside) after the array ofsolder balls 106 is formed, or vice versa. It shall also be understood that the lower component (for each unit on the underside) and the array ofsolder balls 106 may be attached, implemented, and/or formed substantially simultaneously. - Referring to
FIG. 11K , afabrication state 1170 can include implementing anovermold 105 over thelower components 104 and thesolder balls 106. In one embodiment, theovermold 105 may completely encapsulate thelower component 104 in thefabrication state 1120. In another embodiment, theovermold 105 may completely encapsulate thesolder balls 106. For example, the height of theovermold 105 may be higher than the height of thesolder balls 106. In a further embodiment, the height of theovermold 105 may be equal (or substantially equal) to the height of the solder balls. - Referring to
FIG. 11L , afabrication state 1125 can include removing portions of theovermold 105 in areas that are around the solder balls 106 (e.g., around the through-mold connections). For example, portions of theovermold 105 in a circular area (centered around a solder ball 106) may be removed (e.g., a circular portion of theovermold 105 centered around asolder ball 106 may be removed). As illustrated inFIG. 11L , there may be a gap between theovermold 105 and the top of thesolder balls 106. One having ordinary skill in the art understands that the portions of theovermold 105 that are removed may have various sizes and/or shapes. For example, a square shaped portion of the overmold centered around asolder ball 106 may be removed. In one embodiment, portions of theovermold 105 may be removed using a laser (e.g., a laser drill). For example, a laser may be used to burn and/or melt portions of theovermold 105 in the areas around thesolder balls 106. One having ordinary skill in the art understands that various other methods, processes, and/or operations may be used to remove portions of theovermold 105. As illustrated inFIG. 11L , there may be a gap between theovermold 105 and the top of thesolder balls 106. In other embodiments, the gap between theovermold 105 and the top of thesolder balls 106 may be larger, smaller, or may not be present. - Referring to
FIG. 11M , afabrication state 1135 can include individual units being singulated to yield a plurality of un-shielded dual-sidedpackages 1195 substantially ready for conformal shielding process steps, or if shielding is not needed, substantially ready to be mounted to circuit boards. As described above, each of the dual-sidedpackages 1195 includes side walls; and each side wall is shown to include an exposed portion of the cutconductive feature 378. In some embodiments, such a singulation process can be achieved while the panel (352) is in its inverted orientation (as shown in the example ofFIG. 11L ), or while the panel (352) is in its upright orientation (e.g., as in the example ofFIG. 11H ). A close-up view of thesolder balls 106 and additional details (of the solder balls 106) are illustrated/discussed above in conjunction withFIG. 2 . -
FIGS. 12A-12F show various example states leading to formation of dual-sided packages without conformal shielding. Referring toFIG. 12A , afabrication state 1205 can include apanel 352 having a plurality of to-be-singulated units. For example, singulation can occur at boundaries depicted by dashedlines 360 so at to yield singulated individual units. Thepanel 352 is shown to include asubstrate panel 354 on which upper portions (collectively indicated as 356) are formed. Each unit of such an upper-portion panel can include various parts described herein in reference to any combination ofFIGS. 4, 5, and 5 . Such parts can include various components and shielding structures mounted or implemented on thesubstrate panel 354. The upper-portion panel 356 can also include an overmold layer which can be formed as a common layer for a number of individual units. In the example ofFIG. 12A ,conductive features 378 are shown to be implemented within thesubstrate panel 354. Eachconductive feature 378 can straddle thecorresponding boundary 360, such than when separation occurs at theboundary 360, each of the two exposed side walls of the substrates includes an exposed portion of theconductive feature 378 that has been cut. Each of such cut conductive feature is electrically connected to a ground plane (not shown) within the corresponding substrate. - Referring to
FIG. 12B , afabrication state 1210 can include thepanel 352 ofFIG. 12A being inverted so that its underside faces upward. Such an inverted orientation can allow processing of the underside while the individual units are still attached in the panel. - Referring to
FIG. 12C , a fabrication state 1265 can include alower component 104 being attached for each unit on the underside (which is facing upward) of thesubstrate 254. The fabrication state 1265 may also include an array ofsolder balls 106 being formed for each unit on the underside (which is facing upward) of thesubstrate 254. Such a step is shown to yield an array of dual-sided units to be singulated. It will be understood that thelower component 104 may be attached for each unit (on the underside) after the array ofsolder balls 106 is formed, or vice versa. It shall also be understood that the lower component (for each unit on the underside) and the array ofsolder balls 106 may be attached, implemented, and/or formed substantially simultaneously. - Referring to
FIG. 12D , a fabrication state 1270 can include implementing anovermold 105 over thelower components 104 and thesolder balls 106. In one embodiment, theovermold 105 may completely encapsulate thelower component 104 in thefabrication state 1220. Theovermold 105 may also substantially encapsulate thesolder balls 106. For example, as illustrated in the close-up view ofsolder ball 106, the height of theovermold 105 may be shorter than the height of thesolder ball 106 but the majority of thesolder ball 106 may be encapsulated by theovermold 105. In one embodiment, a layer 117 (e.g., a film, a coating, a thin sheet, etc.) of overmold material may be deposited on the tops of thesolder balls 106 after theovermold 105 is implemented over thelower components 104 and thesolder balls 106. - Referring to
FIG. 12E , afabrication state 1225 can include removing the layer 117 (e.g., the film of overmold material) from the tops of thesolder balls 106. For example, a laser may be used to burn and/or melt thelayer 117 from the top of asolder ball 106. One having ordinary skill in the art understands that various other methods, processes, and/or operations may be used to remove thelayer 117. As illustrated inFIG. 12E , there may be a gap between theovermold 105 and the top of thesolder balls 106 after removing thelayer 117. In other embodiments, the gap between theovermold 105 and the top of thesolder balls 106 may be larger, smaller, or may not be present. - Referring to
FIG. 12F , afabrication state 1230 can include individual units being singulated to yield a plurality of un-shielded dual-sidedpackages 1290 substantially ready for conformal shielding process steps, or if shielding is not needed, substantially ready to be mounted to circuit boards. As described above, each of the dual-sidedpackages 1290 includes side walls; and each side wall is shown to include an exposed portion of the cutconductive feature 378. In some embodiments, such a singulation process can be achieved while the panel (352) is in its inverted orientation (as shown in the example ofFIG. 12E ), or while the panel (352) is in its upright orientation (e.g., as in the example ofFIG. 12A ). A close-up view of thesolder balls 106 and additional details (of the solder balls 106) are illustrated/discussed above in conjunction withFIG. 2 . -
FIGS. 13A-13C show various example states leading to formation of dual-sided packages without conformal shielding. Referring toFIG. 13A , afabrication state 1305 may include apanel 352 withsolder balls 106,components 104, and anovermold 105 implemented on asubstrate panel 354, as discussed above. Upper portions (collectively indicated as 356) may be formed on thesubstrate panel 354, as discussed above. For example, thepanel 352 may result from thefabrication state 1130 illustrated inFIG. 11F , thefabrication state 1175 illustrated inFIG. 11 L, and/or the fabrication state 12E illustrated inFIG. 12E . In the example ofFIG. 13A ,conductive features 378 are shown to be implemented within thesubstrate panel 354. Eachconductive feature 378 can straddle thecorresponding boundary 360, such than when separation occurs at theboundary 360, each of the two exposed side walls of the substrates includes an exposed portion of theconductive feature 378 that has been cut. Each of such cut conductive feature is electrically connected to a ground plane (not shown) within the corresponding substrate. - Referring to
FIG. 13B , afabrication state 1310 may include forming, depositing, implementing, etc.,conductive material 118 on top of thesolder balls 106. For example additional solder balls may be formed on top of thesolder balls 106. In another example, solder material may be screen printed on top of thesolder balls 106. The additional conductive material may be used to attach the dual-sided packages to a surface (e.g., to a circuit board). The additional conductive material may also provide electrical connections and/or thermal conductivity between components/circuits of the dual-sided packages and/or other components/circuits (e.g., between components/circuits located on a circuit board). - Referring to
FIG. 13C , afabrication state 1315 can include individual units being singulated to yield a plurality of un-shielded dual-sidedpackages 1390 substantially ready for conformal shielding process steps, or if shielding is not needed, substantially ready to be mounted to circuit boards. As described above, each of the dual-sidedpackages 1390 includes side walls; and each side wall is shown to include an exposed portion of the cutconductive feature 378. In some embodiments, such a singulation process can be achieved while the panel (352) is in its inverted orientation (as shown in the example ofFIG. 13A ), or while the panel (352) is in its upright orientation. A close-up view of thesolder balls 106 and additional details (of the solder balls 106) are illustrated/discussed above in conjunction withFIG. 2 . -
FIGS. 14A-14D show various states of a process that can be implemented to process individual units such as the un-shielded dual-sidedpackages 370 ofFIG. 10D with aframe carrier 300. Referring toFIG. 14A , afabrication state 380 can include a plurality of un-shielded dual-sidedpackages 370 being positioned (arrow 382) over anadhesive layer 320. Examples of theadhesive layer 320 may include a layer of glue, a layer of paste, a layer of epoxy/epoxy resin, etc. Theadhesive layer 320 may be deposited over asurface 321 of the frame carrier 300 (e.g., an upper surface of the frame carrier 300). A close-up view of thesolder balls 106 and additional details (of the solder balls 106) are illustrated/discussed above in conjunction withFIG. 2 . - Referring to
FIG. 14B , a fabrication state 383 can include the un-shielded dual-sidedpackages 370 positioned such that thesolder balls 106 and/or a surface of the overmold on the underside of the packaging substrate (e.g., overmold 105 illustrated inFIG. 2 ) engage (e.g., are in contact with) thesurface 321. As illustrated inFIG. 14B , thesolder balls 106 may engage the surface of theadhesive layer 320. Such an engagement between the lower surface of the dual-sidedpackages 370 and thesurface 321 is indicated as 388. Also as illustrated inFIG. 14B , theovermold 105 on the underside of the packaging substrate may engage adhesive layer 320 (e.g., may contact the adhesive layer 320). Such an engagement between theovermold 105 on the underside of the packaging substrate and theadhesive layer 320 is indicated as 386. - Once the individual un-shielded dual-sided
packages 370 are arranged in such a manner, some or all of the subsequent steps can be performed in manners as if the units are in a panel format. Advantageously, such steps can include formation of a conformal shielding layer on the upper surface and the side walls (390) of each un-shielded dual-sided package 370. More particularly, and as described herein, the position of the un-shielded dual-sided package 370 relative to the plate 304 allows theside walls 390 to be exposed substantially fully for metal deposition by techniques such as sputter deposition. As further shown inFIG. 14B , the un-shielded dual-sidedpackages 370 can be arranged so that the un-shielded dual-sidedpackages 370 positioned therein are spaced apart sufficiently to facilitate effective sputter deposition of metal on theside walls 390. -
FIG. 14C shows afabrication state 384 where a conformalconductive layer 385 has been formed. Such a conformalconductive layer 385 is shown to cover the upper surface and the side walls (390) of each dual-sided package. The side wall portion of the conformalconductive layer 385 is further shown to be in electrical contact with the conductive features 378 (which are in turn connected to a ground plane (not shown)) to thereby form an RF shield for the dual-sided package. -
FIG. 14D shows afabrication state 386 where shielded dual-sidedpackages 100 are being removed (arrow 387) from theframe carrier 300. Thus, one can see that the resulting dual-sidedpackages 100 with conformal shielding can be obtained by different processes. For example, the dual-sidedpackages 100 with conformal shielding as described in reference toFIG. 14D are similar to the dual-sided packages 100 (with conformal shielding) ofFIG. 14D . Accordingly, it will be understood that other variations in process steps can be implemented. - In one embodiment, portions of the
adhesive layer 320 may remain attached (e.g., may stick) to the shielded dual-sidedpackages 100 when the shielded dual-sidedpackages 100 are removed (not shown in the figures). The portions of theadhesive layer 320 that remain attached to the shielded dual-sidedpackages 100 may be removed in a later process. For example, the portions of theadhesive layer 320 that remain attached to the shielded dual-sidedpackages 100 may be removed during a cleaning process. - As described herein, a shielded package and a lower component of a dual-sided package can include different combinations of components.
FIG. 15 shows that in some embodiments, a dual-sided package 100 can include a shieldedpackage 102 having one or more surface-mount technology (SMT)devices 400 mounted on apackaging substrate 402. As further shown inFIG. 15 , one or more semiconductor die 104 can be mounted under thepackaging substrate 402. As described herein, such one or more die can be mounted within a region generally defined by an array ofsolder balls 106. - As further described herein, an
overmold 404 can be formed over thepackaging substrate 402 so as to substantially encapsulate the SMT device(s) 404, and to facilitate shielding functionalities. It will be understood that the shieldedpackage 102 can include one or more shielding features as described herein. Anovermold 105 may be formed and/or implemented in the underside volume (where the semiconductor die 104 is located) formed by the solder balls 106 (e.g., formed by a set of through-mold connections, such as a BGA). In one embodiment, theovermold 105 may encapsulate at least a portion of the semiconductor die 104. For example, theovermold 105 may fully or partially encapsulate the semiconductor die 104. In another embodiment, theovermold 105 may encapsulate at least a portion of the solder balls 106 (e.g., through-mold connections). For example, theovermold 105 may fully or partially encapsulate thesolder balls 106. As discussed above, theovermold 105 and/or the solder balls 106 (e.g., the exposed portions of the solder balls 106) may form a land grid array (LGA) type/style package. A close-up view of thesolder balls 106 and additional details (of the solder balls 106) are illustrated/discussed above in conjunction withFIG. 2 . -
FIG. 16 shows a dual-sided package 100 that can be a more specific example of the dual-sided package ofFIG. 15 . In the example ofFIG. 16 , the SMT device(s) can be one or more filters and/or filter-baseddevices 400 that are encapsulated by anovermold 404. Further, the semiconductor die 104 mounted under apackaging substrate 402 can be a die having RF amplifier(s) and/or switch(es). Accordingly, such a dual-side package can be implemented as different modules configured to facilitate transmission and/or reception of RF signals. For example, the dual-sided package 100 can be implemented as a power amplifier (PA) module, a low-noise amplifier (LNA) module, a front-end module (FEM), a switching module, etc. Anovermold 105 may be formed and/or implemented in the underside volume (where the semiconductor die 104 is located) formed by the solder balls 106 (e.g., formed by a set of through-mold connections, such as a BGA). In one embodiment, theovermold 105 may encapsulate at least a portion of the semiconductor die 104. For example, theovermold 105 may fully or partially encapsulate the semiconductor die 104. In another embodiment, theovermold 105 may encapsulate at least a portion of the solder balls 106 (e.g., through-mold connections). For example, theovermold 105 may fully or partially encapsulate thesolder balls 106. As discussed above, theovermold 105 and/or the solder balls 106 (e.g., the exposed portions of the solder balls 106) may form a land grid array (LGA) type/style package. A close-up view of thesolder balls 106 and additional details (of the solder balls 106) are illustrated/discussed above in conjunction withFIG. 2 . -
FIG. 17 shows a dual-sided package 100 that can be a more specific example of the dual-sided package ofFIG. 16 . In the example ofFIG. 17 , the semiconductor die 104 mounted under apackaging substrate 402 can be a die having one or more LNAs and one or more switches. In some embodiments, such a dual-side package can be implemented as a module having LNA-related functionalities, including, for example, an LNA module. Anovermold 105 may be formed and/or implemented in the underside volume (where the semiconductor die 104 is located) formed by the solder balls 106 (e.g., formed by a set of through-mold connections, such as a BGA). In one embodiment, theovermold 105 may encapsulate at least a portion of the semiconductor die 104. For example, theovermold 105 may fully or partially encapsulate the semiconductor die 104. In another embodiment, theovermold 105 may encapsulate at least a portion of the solder balls 106 (e.g., through-mold connections). For example, theovermold 105 may fully or partially encapsulate thesolder balls 106. As discussed above, theovermold 105 and/or the solder balls 106 (e.g., the exposed portions of the solder balls 106) may form a land grid array (LGA) type/style package. A close-up view of thesolder balls 106 and additional details (of the solder balls 106) are illustrated/discussed above in conjunction withFIG. 2 . -
FIG. 18A illustrates a top-down perspective view of an underside of a dual-sided package 1805, according to some embodiments. In one embodiment, the dual-sided package 1805 may result from the fabrication/manufacturing process illustrated inFIGS. 9A-9L and 10A-10L . The dual sided package includes a substrate on which an upper portion (collectively indicated as 356) are formed, as discussed above. Thesolder balls 106 and theovermold 105 may be implemented on a surface of theupper portion 356, as discussed above. Thesolder balls 106 may be arranged around aregion 1806. A component (e.g.,component 104 discussed above) may be located under theovermold 105 in theregion 1806. Thesolder balls 106 may be arranged such that thesolder balls 106 form a rectangular perimeter around theregion 1806. For example, a first group of solder balls may form a rectangular perimeter around the region 1806 (e.g., the inner rectangular perimeter of solder balls 106). A second group ofsolder balls 106 may form a rectangular perimeter around the first group of solder balls 106 (e.g., the outer rectangular perimeter of solder balls 106). - As illustrated in
FIG. 18A , thesolder balls 106 are exposed through theovermold 105. For example, portions of thesolder balls 106 may be removed when portions of theovermold 105 are removed during a fabrication/manufacturing process/state, as discussed above. The top of the remaining portions of thesolder balls 106 may be visible after the portions of theovermold 105 are removed. -
FIG. 18B illustrates a top-down perspective view of an underside of a dual-sided package 1810, according to some embodiments. In one embodiment, the dual-sided package 1810 may result from the fabrication/manufacturing process illustrated inFIGS. 11A-11M and 12A-12F . The dual sided package includes a substrate on which an upper portion (collectively indicated as 356) are formed, as discussed above. Thesolder balls 106 and theovermold 105 may be implemented on a surface of theupper portion 356, as discussed above. Thesolder balls 106 may be arranged around aregion 1811. A component (e.g.,component 104 discussed above) may be located under theovermold 105 in theregion 1811. Thesolder balls 106 may be arranged such that thesolder balls 106 form a rectangular perimeter around theregion 1811. For example, a first group of solder balls may form a rectangular perimeter around the region 1811 (e.g., the inner rectangular perimeter of solder balls 106). A second group ofsolder balls 106 may form a rectangular perimeter around the first group of solder balls 106 (e.g., the outer rectangular perimeter of solder balls 106). - As illustrated in
FIG. 18A , thesolder balls 106 are exposed through theovermold 105. Also as illustrated, portions of theovermold 105 in regions around each solder ball 106 (e.g., in a circular region around each solder ball 106) have been removed, as discussed above. Removing the portions of theovermold 105 in the regions around eachsolder ball 106 may create a gap (e.g., a torus/donut shaped gap between eachsolder ball 106 and theovermold 105, as discussed above. -
FIG. 18C illustrates a bottom-up close-up perspective view of a portion of an underside of a dual-sided package 1815, according to some embodiments. In one embodiment, the dual-sided package 1810 may result from the fabrication/manufacturing process illustrated inFIGS. 13A-13C . The dual sided package includes a substrate on which an upper portion (collectively indicated as 356) are formed, as discussed above. The solder balls and theovermold 105 may be implemented on a surface of theupper portion 356, as discussed above. Additionalconductive material 118 may be formed, implemented, deposited, etc., on top of the solder balls, as discussed above in conjunction withFIGS. 13A-13C . The additionalconductive material 118 may result in a dome shape that protrudes above the surface of theovermold 105. For example, the height of theconductive material 118 may be greater than the height of theovermold 105. - Although the examples, embodiments, implementations, and/or configurations described herein may illustrate a component (e.g.,
component 104 illustrated inFIG. 1 ) positioned in a middle of a surface of a module and may illustrate through-mold connections (e.g., contact features, solder balls, pillars, etc.) positioned around the component, one having ordinary skill in the art understands that the positions, sizes, positioning/placements, and/or number of the through-mold connections and/or components may vary. For example, a component may not be located in the middle of a surface of a module and may be located along an outer edge (e.g., a left edge) of the surface of the module. In another example, through-mold connections (e.g., solder balls, pillars, contact features, etc.) may be located in the middle of the surface of a module (e.g., may be located wherecomponent 104 is located inFIG. 6B ). -
FIGS. 19 and 20 show examples of how the dual-sided package 100 illustrated in the figures can be implemented in wireless devices.FIG. 19 shows that in some embodiments, a dual-sided package having one or more features as described herein can be implemented as a diversity receive (RX)module 100. Such a module can be implemented relatively close to adiversity antenna 420 so as to minimize or reduce losses and/or noise in asignal path 422. - The
diversity RX module 100 can be configured such thatswitches LNAs 414, are implemented in a semiconductor die (depicted as 104) that is mounted underneath a packaging substrate.Filters 400 can be mounted on such a packaging substrate as described herein. - As further shown in
FIG. 19 , RX signals processed by thediversity RX module 100 can be routed to a transceiver through asignal path 424. In wireless applications where thesignal path 424 is relatively long and lossy, the foregoing implementation of thediversity RX module 100 close to theantenna 420 can provide a number of desirable features. -
FIG. 20 shows that in some embodiment a dual-sided package having one or more features as described herein can be implemented in other types of LNA applications. For example, in anexample wireless device 500 ofFIG. 20 , an LNA or LNA-relatedmodule 100 can be implemented as a dual-sided package as described herein, and such a module can be utilized with amain antenna 524. - The
example LNA module 100 ofFIG. 20 can include, for example, one or more LNAs 104, a bias/logic circuit 432, and a band-selection switch 430. Some or all of such circuits can be implemented in a semiconductor die that is mounted under a packaging substrate of theLNA module 100. In such an LNA module, some or all ofduplexers 400 can be mounted on the packaging substrate so as to form a dual-sided package having one or more features as described herein. -
FIG. 20 further depicts various features associated with theexample wireless device 500. Although not specifically shown inFIG. 20 , adiversity RX module 100 ofFIG. 19 can be included in thewireless device 500 with theLNA module 100, in place of theLNA module 100, or any combination thereof. It will also be understood that a dual-sided package having one or more features as described herein can be implemented in thewireless device 500 as a non-LNA module. - In the
example wireless device 500, a power amplifier (PA)circuit 518 having a plurality of PAs can provide an amplified RF signal to a switch 430 (via duplexers 400), and theswitch 430 can route the amplified RF signal to anantenna 524. ThePA circuit 518 can receive an unamplified RF signal from atransceiver 514 that can be configured and operated in known manners. - The
transceiver 514 can also be configured to process received signals. Such received signals can be routed to theLNA 104 from theantenna 524, through theduplexers 400. Various operations of theLNA 104 can be facilitated by the bias/logic circuit 432. - The
transceiver 514 is shown to interact with abaseband sub-system 510 that is configured to provide conversion between data and/or voice signals suitable for a user and RF signals suitable for thetransceiver 514. Thetransceiver 514 is also shown to be connected to apower management component 506 that is configured to manage power for the operation of thewireless device 500. Such a power management component can also control operations of thebaseband sub-system 510. - The
baseband sub-system 510 is shown to be connected to auser interface 502 to facilitate various input and output of voice and/or data provided to and received from the user. Thebaseband sub-system 510 can also be connected to amemory 504 that is configured to store data and/or instructions to facilitate the operation of the wireless device, and/or to provide storage of information for the user. - A number of other wireless device configurations can utilize one or more features described herein. For example, a wireless device does not need to be a multi-band device. In another example, a wireless device can include additional antennas such as diversity antenna, and additional connectivity features such as Wi-Fi, Bluetooth, and GPS.
- Unless the context clearly requires otherwise, throughout the description and the claims, the words “comprise,” “comprising,” and the like are to be construed in an inclusive sense, as opposed to an exclusive or exhaustive sense; that is to say, in the sense of “including, but not limited to.” The word “coupled”, as generally used herein, refers to two or more elements that may be either directly connected, or connected by way of one or more intermediate elements. Additionally, the words “herein,” “above,” “below,” and words of similar import, when used in this application, shall refer to this application as a whole and not to any particular portions of this application. Where the context permits, words in the above Description using the singular or plural number may also include the plural or singular number respectively. The word “or” in reference to a list of two or more items, that word covers all of the following interpretations of the word: any of the items in the list, all of the items in the list, and any combination of the items in the list.
- The above detailed description of embodiments of the invention is not intended to be exhaustive or to limit the invention to the precise form disclosed above. While specific embodiments of, and examples for, the invention are described above for illustrative purposes, various equivalent modifications are possible within the scope of the invention, as those skilled in the relevant art will recognize. For example, while processes or blocks are presented in a given order, alternative embodiments may perform routines having steps, or employ systems having blocks, in a different order, and some processes or blocks may be deleted, moved, added, subdivided, combined, and/or modified. Each of these processes or blocks may be implemented in a variety of different ways. Also, while processes or blocks are at times shown as being performed in series, these processes or blocks may instead be performed in parallel, or may be performed at different times.
- The teachings of the invention provided herein can be applied to other systems, not necessarily the system described above. The elements and acts of the various embodiments described above can be combined to provide further embodiments.
- While some embodiments of the inventions have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the disclosure. Indeed, the novel methods and systems described herein may be embodied in a variety of other forms; furthermore, various omissions, substitutions and changes in the form of the methods and systems described herein may be made without departing from the spirit of the disclosure. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the disclosure.
Claims (33)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/724,735 US20180096950A1 (en) | 2016-10-04 | 2017-10-04 | Radio-frequency device with dual-sided overmold structure |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662404022P | 2016-10-04 | 2016-10-04 | |
US201662404015P | 2016-10-04 | 2016-10-04 | |
US201662404029P | 2016-10-04 | 2016-10-04 | |
US15/724,735 US20180096950A1 (en) | 2016-10-04 | 2017-10-04 | Radio-frequency device with dual-sided overmold structure |
Publications (1)
Publication Number | Publication Date |
---|---|
US20180096950A1 true US20180096950A1 (en) | 2018-04-05 |
Family
ID=61757239
Family Applications (6)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/724,735 Abandoned US20180096950A1 (en) | 2016-10-04 | 2017-10-04 | Radio-frequency device with dual-sided overmold structure |
US15/724,722 Active US10607944B2 (en) | 2016-10-04 | 2017-10-04 | Dual-sided radio-frequency package with overmold structure |
US15/724,746 Abandoned US20180096951A1 (en) | 2016-10-04 | 2017-10-04 | Circuits and methods related to radio-frequency devices with overmold structure |
US16/833,625 Active US11127690B2 (en) | 2016-10-04 | 2020-03-29 | Dual-sided radio-frequency package with overmold structure |
US17/473,207 Active 2038-04-20 US11961805B2 (en) | 2016-10-04 | 2021-09-13 | Devices and methods related to dual-sided radio-frequency package with overmold structure |
US18/632,203 Pending US20240347476A1 (en) | 2016-10-04 | 2024-04-10 | Methods related to dual-sided radio-frequency package with overmold structure |
Family Applications After (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/724,722 Active US10607944B2 (en) | 2016-10-04 | 2017-10-04 | Dual-sided radio-frequency package with overmold structure |
US15/724,746 Abandoned US20180096951A1 (en) | 2016-10-04 | 2017-10-04 | Circuits and methods related to radio-frequency devices with overmold structure |
US16/833,625 Active US11127690B2 (en) | 2016-10-04 | 2020-03-29 | Dual-sided radio-frequency package with overmold structure |
US17/473,207 Active 2038-04-20 US11961805B2 (en) | 2016-10-04 | 2021-09-13 | Devices and methods related to dual-sided radio-frequency package with overmold structure |
US18/632,203 Pending US20240347476A1 (en) | 2016-10-04 | 2024-04-10 | Methods related to dual-sided radio-frequency package with overmold structure |
Country Status (4)
Country | Link |
---|---|
US (6) | US20180096950A1 (en) |
KR (2) | KR20190067839A (en) |
CN (1) | CN110024115B (en) |
WO (1) | WO2018067578A1 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20180096951A1 (en) * | 2016-10-04 | 2018-04-05 | Skyworks Solutions, Inc. | Circuits and methods related to radio-frequency devices with overmold structure |
US20180218922A1 (en) * | 2017-01-31 | 2018-08-02 | Skyworks Solutions, Inc. | Control of under-fill with a packaging substrate having an integrated trench for a dual-sided ball grid array package |
US20200243459A1 (en) * | 2017-01-12 | 2020-07-30 | Amkor Technology, Inc. | Semiconductor Package With EMI Shield and Fabricating Method Thereof |
WO2021131775A1 (en) * | 2019-12-27 | 2021-07-01 | 株式会社村田製作所 | Module |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11233014B2 (en) * | 2017-01-30 | 2022-01-25 | Skyworks Solutions, Inc. | Packaged module having a ball grid array with grounding shielding pins for electromagnetic isolation, method of manufacturing the same, and wireless device comprising the same |
CN112970201B (en) | 2018-11-02 | 2022-08-23 | 株式会社村田制作所 | High-frequency module, transmission power amplifier, and communication device |
US11373959B2 (en) * | 2019-04-19 | 2022-06-28 | Skyworks Solutions, Inc. | Shielding for flip chip devices |
JP2021052378A (en) * | 2019-09-20 | 2021-04-01 | 株式会社村田製作所 | High frequency module and communication device |
JP2021093607A (en) * | 2019-12-09 | 2021-06-17 | 株式会社村田製作所 | High frequency module and communication device |
JP2021132346A (en) * | 2020-02-21 | 2021-09-09 | 株式会社村田製作所 | High frequency module and communication device |
JP2021145288A (en) * | 2020-03-13 | 2021-09-24 | 株式会社村田製作所 | High frequency module and communication device |
JP2021175053A (en) * | 2020-04-22 | 2021-11-01 | 株式会社村田製作所 | High-frequency module and communication device |
JP2021197569A (en) | 2020-06-09 | 2021-12-27 | 株式会社村田製作所 | High frequency module and communication device |
CN111613614B (en) * | 2020-06-29 | 2022-03-25 | 青岛歌尔智能传感器有限公司 | System-in-package structure and electronic device |
US11152707B1 (en) * | 2020-07-02 | 2021-10-19 | International Business Machines Corporation | Fast radio frequency package |
CN111653558A (en) * | 2020-07-10 | 2020-09-11 | 天通凯美微电子有限公司 | Double-sided packaging structure and packaging process of surface acoustic wave bare chip |
US20220254179A1 (en) * | 2020-12-07 | 2022-08-11 | Skyworks Solutions, Inc. | Systems, devices and methods related to character recognition in fabrication of packaged modules |
US11601065B1 (en) * | 2021-08-30 | 2023-03-07 | Texas Instruments Incorporated | Power converter module |
US20230115846A1 (en) * | 2021-10-13 | 2023-04-13 | Skyworks Solutions, Inc. | Electronic Package and Method for Manufacturing an Electronic Package |
TWI811053B (en) * | 2022-08-04 | 2023-08-01 | 矽品精密工業股份有限公司 | Carrier structure |
US20240087999A1 (en) * | 2022-09-12 | 2024-03-14 | Skyworks Solutions, Inc. | Packaging substrate having metal posts |
Citations (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6194250B1 (en) * | 1998-09-14 | 2001-02-27 | Motorola, Inc. | Low-profile microelectronic package |
US20020016056A1 (en) * | 1999-02-19 | 2002-02-07 | Corisis David J. | Methods of packaging an integrated circuit |
US6415977B1 (en) * | 2000-08-30 | 2002-07-09 | Micron Technology, Inc. | Method and apparatus for marking and identifying a defective die site |
US20030162386A1 (en) * | 2001-01-31 | 2003-08-28 | Tsuyoshi Ogawa | Semiconductor device and its manufacturing method |
US20050121764A1 (en) * | 2003-12-04 | 2005-06-09 | Debendra Mallik | Stackable integrated circuit packaging |
US20080042301A1 (en) * | 2005-01-05 | 2008-02-21 | Integrated System Solution Advanced Semiconductor | Semiconductor device package and manufacturing method |
US20080079163A1 (en) * | 2006-10-02 | 2008-04-03 | Nec Electronics Corporation | Electronic device and method of manufacturing the same |
US7372151B1 (en) * | 2003-09-12 | 2008-05-13 | Asat Ltd. | Ball grid array package and process for manufacturing same |
US20090002967A1 (en) * | 2007-06-29 | 2009-01-01 | Tdk Corporation | Electronic module and fabrication method thereof |
US20090236700A1 (en) * | 2007-01-31 | 2009-09-24 | Fujitsu Microelectronics Limited | Semiconductor device and manufacturing method of the same |
US7642133B2 (en) * | 2006-09-27 | 2010-01-05 | Advanced Semiconductor Engineering, Inc. | Method of making a semiconductor package and method of making a semiconductor device |
US20100171205A1 (en) * | 2009-01-07 | 2010-07-08 | Kuang-Hsiung Chen | Stackable Semiconductor Device Packages |
US20100172116A1 (en) * | 2008-11-07 | 2010-07-08 | Renesas Technology Corp. | Shielded electronic components and method of manufacturing the same |
US7777351B1 (en) * | 2007-10-01 | 2010-08-17 | Amkor Technology, Inc. | Thin stacked interposer package |
US20100224974A1 (en) * | 2009-03-04 | 2010-09-09 | Il Kwon Shim | Integrated circuit packaging system with patterned substrate and method of manufacture thereof |
US20100230789A1 (en) * | 2009-03-16 | 2010-09-16 | Renesas Technology Corp. | Semiconductor device and manufacturing method thereof |
US20110084378A1 (en) * | 2008-07-31 | 2011-04-14 | Skyworks Solutions, Inc. | Semiconductor package with integrated interference shielding and method of manufacture thereof |
US20120013001A1 (en) * | 2010-07-19 | 2012-01-19 | Tessera Research Llc | Stackable molded microelectronic packages with area array unit connectors |
US20120146181A1 (en) * | 2010-12-10 | 2012-06-14 | Stats Chippac, Ltd. | Semiconductor Device and Method of Forming an Inductor Within Interconnect Layer Vertically Separated from Semiconductor Die |
US8222538B1 (en) * | 2009-06-12 | 2012-07-17 | Amkor Technology, Inc. | Stackable via package and method |
US20120225522A1 (en) * | 2011-03-03 | 2012-09-06 | Broadcom Corporation | Package 3D Interconnection and Method of Making Same |
US20130119539A1 (en) * | 2011-11-16 | 2013-05-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package Structures and Methods for Forming the Same |
US8508045B2 (en) * | 2011-03-03 | 2013-08-13 | Broadcom Corporation | Package 3D interconnection and method of making same |
US20130249115A1 (en) * | 2012-03-23 | 2013-09-26 | Stats Chippac, Ltd. | Semiconductor Method and Device of Forming a Fan-Out PoP Device with PWB Vertical Interconnect Units |
US20130249101A1 (en) * | 2012-03-23 | 2013-09-26 | Stats Chippac, Ltd. | Semiconductor Method of Device of Forming a Fan-Out PoP Device with PWB Vertical Interconnect Units |
US20130341784A1 (en) * | 2012-06-21 | 2013-12-26 | Stats Chippac, Ltd. | Semiconductor Device and Method of Forming an Embedded SOP Fan-Out Package |
US20140048906A1 (en) * | 2012-03-23 | 2014-02-20 | Stats Chippac, Ltd. | Semiconductor Device and Method of Forming a Fan-Out PoP Device with PWB Vertical Interconnect Units |
US20140103527A1 (en) * | 2012-03-23 | 2014-04-17 | Stats Chippac, Ltd. | Semiconductor Device and Method of Forming a POP Device with Embedded Vertical Interconnect Units |
US20140307394A1 (en) * | 2013-04-16 | 2014-10-16 | Skyworks Solutions, Inc. | Apparatus and methods related to conformal coating implemented with surface mount devices |
US20150126134A1 (en) * | 2013-11-05 | 2015-05-07 | Skyworks Solutions, Inc. | Devices and methods related to packaging of radio-frequency devices on ceramic substrates |
US20150255415A1 (en) * | 2014-03-05 | 2015-09-10 | Thomas J. De Bonis | Package Structure To Enhance Yield of TMI Interconnections |
US20160013175A1 (en) * | 2013-03-11 | 2016-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package-on-Package Structure and Methods for Forming the Same |
US20160035593A1 (en) * | 2014-07-31 | 2016-02-04 | Skyworks Solutions, Inc. | Devices and methods related to support for packaging substrate panel having cavities |
US20160111375A1 (en) * | 2014-10-17 | 2016-04-21 | Tango Systems, Inc. | Temporary bonding of packages to carrier for depositing metal layer for shielding |
US9355444B2 (en) * | 2012-09-28 | 2016-05-31 | Skyworks Solutions, Inc. | Systems and methods for processing packaged radio-frequency modules identified as being potentially defective |
US20160161992A1 (en) * | 2014-12-05 | 2016-06-09 | Heung Kyu Kwon | Package on packages and mobile computing devices having the same |
US20170040293A1 (en) * | 2015-08-03 | 2017-02-09 | Samsung Electronics Co., Ltd. | Printed circuit board (pcb), method of manufacturing the pcb, and method of manufacturing semiconductor package using the pcb |
US20170084549A1 (en) * | 2013-12-04 | 2017-03-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Warpage Control in Package-on-Package Structures |
US20170117184A1 (en) * | 2015-09-30 | 2017-04-27 | Skyworks Solutions, Inc. | Devices and methods related to fabrication of shielded modules |
US20170317710A1 (en) * | 2016-04-29 | 2017-11-02 | Skyworks Solutions, Inc. | Shielded diversity receive module |
US20170345862A1 (en) * | 2016-05-26 | 2017-11-30 | Semiconductor Components Industries, Llc | Semiconductor package with interposer |
US9837331B1 (en) * | 2010-12-03 | 2017-12-05 | Amkor Technology, Inc. | Semiconductor device having overlapped via apertures |
US9837303B2 (en) * | 2012-03-23 | 2017-12-05 | STATS ChipPAC Pte. Ltd. | Semiconductor method and device of forming a fan-out device with PWB vertical interconnect units |
US9922955B2 (en) * | 2010-03-04 | 2018-03-20 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of forming package-on-package structure electrically interconnected through TSV in WLCSP |
US20180096949A1 (en) * | 2016-10-04 | 2018-04-05 | Skyworks Solutions, Inc. | Dual-sided radio-frequency package with overmold structure |
US20180218922A1 (en) * | 2017-01-31 | 2018-08-02 | Skyworks Solutions, Inc. | Control of under-fill with a packaging substrate having an integrated trench for a dual-sided ball grid array package |
US20180240763A1 (en) * | 2017-01-30 | 2018-08-23 | Skyworks Solutions, Inc. | Dual-sided module with land-grid array (lga) footprint |
US10192816B2 (en) * | 2013-11-19 | 2019-01-29 | Amkor Technology, Inc. | Semiconductor package and fabricating method thereof |
US10410967B1 (en) * | 2011-11-29 | 2019-09-10 | Amkor Technology, Inc. | Electronic device comprising a conductive pad on a protruding-through electrode |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7521297B2 (en) * | 2006-03-17 | 2009-04-21 | Stats Chippac Ltd. | Multichip package system |
US8350367B2 (en) * | 2008-02-05 | 2013-01-08 | Advanced Semiconductor Engineering, Inc. | Semiconductor device packages with electromagnetic interference shielding |
US8067306B2 (en) | 2010-02-26 | 2011-11-29 | Stats Chippac Ltd. | Integrated circuit packaging system with exposed conductor and method of manufacture thereof |
US7863100B2 (en) * | 2009-03-20 | 2011-01-04 | Stats Chippac Ltd. | Integrated circuit packaging system with layered packaging and method of manufacture thereof |
EP2414801B1 (en) * | 2009-03-30 | 2021-05-26 | QUALCOMM Incorporated | Chip package with stacked processor and memory chips |
US8299595B2 (en) * | 2010-03-18 | 2012-10-30 | Stats Chippac Ltd. | Integrated circuit package system with package stacking and method of manufacture thereof |
US8378476B2 (en) * | 2010-03-25 | 2013-02-19 | Stats Chippac Ltd. | Integrated circuit packaging system with stacking option and method of manufacture thereof |
TW201214653A (en) * | 2010-09-23 | 2012-04-01 | Siliconware Precision Industries Co Ltd | Package structure capable of discharging static electricity and preventing electromagnetic wave interference |
KR101711045B1 (en) * | 2010-12-02 | 2017-03-02 | 삼성전자 주식회사 | Stacked Package Structure |
KR101128063B1 (en) * | 2011-05-03 | 2012-04-23 | 테세라, 인코포레이티드 | Package-on-package assembly with wire bonds to encapsulation surface |
KR101332332B1 (en) * | 2011-12-27 | 2013-11-22 | 앰코 테크놀로지 코리아 주식회사 | Semiconductor package having electromagnetic waves shielding means, and method for manufacturing the same |
US8823180B2 (en) * | 2011-12-28 | 2014-09-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package on package devices and methods of packaging semiconductor dies |
KR20130084866A (en) | 2012-01-18 | 2013-07-26 | 삼성전자주식회사 | Semiconductor package with double side molded |
KR20130123958A (en) * | 2012-05-04 | 2013-11-13 | 삼성전자주식회사 | Semiconductor device and method of fabricating the same |
KR20140023112A (en) * | 2012-08-17 | 2014-02-26 | 삼성전자주식회사 | Electronic device having a semiconductor package and method of manufacturing the same |
KR101994715B1 (en) * | 2013-06-24 | 2019-07-01 | 삼성전기주식회사 | Manufacturing method of electronic component module |
KR101983142B1 (en) * | 2013-06-28 | 2019-08-28 | 삼성전기주식회사 | Semiconductor package |
US9941240B2 (en) * | 2013-07-03 | 2018-04-10 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor chip scale package and manufacturing method thereof |
KR20150009826A (en) * | 2013-07-17 | 2015-01-27 | 삼성전자주식회사 | Device embedded package substrate and Semiconductor package including the same |
KR102157551B1 (en) * | 2013-11-08 | 2020-09-18 | 삼성전자주식회사 | A semiconductor package and method of fabricating the same |
KR102186203B1 (en) * | 2014-01-23 | 2020-12-04 | 삼성전자주식회사 | Package-on-package device including the same |
US9793244B2 (en) * | 2014-07-11 | 2017-10-17 | Intel Corporation | Scalable package architecture and associated techniques and configurations |
KR101616625B1 (en) * | 2014-07-30 | 2016-04-28 | 삼성전기주식회사 | Semiconductor package and method of manufacturing the same |
US20160099192A1 (en) * | 2014-07-31 | 2016-04-07 | Skyworks Solutions, Inc. | Dual-sided radio-frequency package having ball grid array |
JP2016119331A (en) * | 2014-12-18 | 2016-06-30 | マイクロン テクノロジー, インク. | Semiconductor device and manufacturing method of the same |
US9786623B2 (en) * | 2015-03-17 | 2017-10-10 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of forming PoP semiconductor device with RDL over top package |
US10109593B2 (en) * | 2015-07-23 | 2018-10-23 | Apple Inc. | Self shielded system in package (SiP) modules |
US10163871B2 (en) * | 2015-10-02 | 2018-12-25 | Qualcomm Incorporated | Integrated device comprising embedded package on package (PoP) device |
US9721903B2 (en) * | 2015-12-21 | 2017-08-01 | Apple Inc. | Vertical interconnects for self shielded system in package (SiP) modules |
-
2017
- 2017-10-03 WO PCT/US2017/054953 patent/WO2018067578A1/en active Application Filing
- 2017-10-03 KR KR1020197012988A patent/KR20190067839A/en active Application Filing
- 2017-10-03 CN CN201780074878.1A patent/CN110024115B/en active Active
- 2017-10-03 KR KR1020237030143A patent/KR102711053B1/en active IP Right Grant
- 2017-10-04 US US15/724,735 patent/US20180096950A1/en not_active Abandoned
- 2017-10-04 US US15/724,722 patent/US10607944B2/en active Active
- 2017-10-04 US US15/724,746 patent/US20180096951A1/en not_active Abandoned
-
2020
- 2020-03-29 US US16/833,625 patent/US11127690B2/en active Active
-
2021
- 2021-09-13 US US17/473,207 patent/US11961805B2/en active Active
-
2024
- 2024-04-10 US US18/632,203 patent/US20240347476A1/en active Pending
Patent Citations (93)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6194250B1 (en) * | 1998-09-14 | 2001-02-27 | Motorola, Inc. | Low-profile microelectronic package |
US20020016056A1 (en) * | 1999-02-19 | 2002-02-07 | Corisis David J. | Methods of packaging an integrated circuit |
US7127365B2 (en) * | 2000-08-30 | 2006-10-24 | Micron Technology, Inc. | Method for identifying a defective die site |
US6415977B1 (en) * | 2000-08-30 | 2002-07-09 | Micron Technology, Inc. | Method and apparatus for marking and identifying a defective die site |
US20020148897A1 (en) * | 2000-08-30 | 2002-10-17 | Rumsey Brad D. | Descriptor for identifying a defective die site and methods of formation |
US20040026515A1 (en) * | 2000-08-30 | 2004-02-12 | Rumsey Brad D. | Descriptor for identifying a defective die site and methods of formation |
US20040030517A1 (en) * | 2000-08-30 | 2004-02-12 | Rumsey Brad D. | Descriptor for identifying a defective die site and methods of formation |
US7255273B2 (en) * | 2000-08-30 | 2007-08-14 | Micron Technology, Inc. | Descriptor for identifying a defective die site |
US6889902B2 (en) * | 2000-08-30 | 2005-05-10 | Micron Technology, Inc. | Descriptor for identifying a defective die site and methods of formation |
US20030162386A1 (en) * | 2001-01-31 | 2003-08-28 | Tsuyoshi Ogawa | Semiconductor device and its manufacturing method |
US6803324B2 (en) * | 2001-01-31 | 2004-10-12 | Sony Corporation | Semiconductor device and its manufacturing method |
US7372151B1 (en) * | 2003-09-12 | 2008-05-13 | Asat Ltd. | Ball grid array package and process for manufacturing same |
US20050121764A1 (en) * | 2003-12-04 | 2005-06-09 | Debendra Mallik | Stackable integrated circuit packaging |
US7345361B2 (en) * | 2003-12-04 | 2008-03-18 | Intel Corporation | Stackable integrated circuit packaging |
US20080042301A1 (en) * | 2005-01-05 | 2008-02-21 | Integrated System Solution Advanced Semiconductor | Semiconductor device package and manufacturing method |
US7642133B2 (en) * | 2006-09-27 | 2010-01-05 | Advanced Semiconductor Engineering, Inc. | Method of making a semiconductor package and method of making a semiconductor device |
US20080079163A1 (en) * | 2006-10-02 | 2008-04-03 | Nec Electronics Corporation | Electronic device and method of manufacturing the same |
US8633591B2 (en) * | 2006-10-02 | 2014-01-21 | Renesas Electronics Corporation | Electronic device |
US20140103524A1 (en) * | 2006-10-02 | 2014-04-17 | Renesas Electronics Corporation | Electronic device |
US8823174B2 (en) * | 2006-10-02 | 2014-09-02 | Renesas Electronics Corporation | Electronic device |
US20130099390A1 (en) * | 2006-10-02 | 2013-04-25 | Renesas Electronics Corporation | Electronic device |
US20140346681A1 (en) * | 2006-10-02 | 2014-11-27 | Renesas Electronics Corporation | Electronic device |
US20160307875A1 (en) * | 2006-10-02 | 2016-10-20 | Renesas Electronics Corporation | Electronic device |
US8354340B2 (en) * | 2006-10-02 | 2013-01-15 | Renesas Electronics Corporation | Electronic device and method of manufacturing the same |
US9406602B2 (en) * | 2006-10-02 | 2016-08-02 | Renesas Electronics Corporation | Electronic device |
US20150137348A1 (en) * | 2006-10-02 | 2015-05-21 | Renesas Electronics Corporation | Electronic device |
US8975750B2 (en) * | 2006-10-02 | 2015-03-10 | Renesas Electronics Corporation | Electronic device |
US20090236700A1 (en) * | 2007-01-31 | 2009-09-24 | Fujitsu Microelectronics Limited | Semiconductor device and manufacturing method of the same |
US20090002967A1 (en) * | 2007-06-29 | 2009-01-01 | Tdk Corporation | Electronic module and fabrication method thereof |
US7777351B1 (en) * | 2007-10-01 | 2010-08-17 | Amkor Technology, Inc. | Thin stacked interposer package |
US20110084378A1 (en) * | 2008-07-31 | 2011-04-14 | Skyworks Solutions, Inc. | Semiconductor package with integrated interference shielding and method of manufacture thereof |
US8373264B2 (en) * | 2008-07-31 | 2013-02-12 | Skyworks Solutions, Inc. | Semiconductor package with integrated interference shielding and method of manufacture thereof |
US20100172116A1 (en) * | 2008-11-07 | 2010-07-08 | Renesas Technology Corp. | Shielded electronic components and method of manufacturing the same |
US20100171205A1 (en) * | 2009-01-07 | 2010-07-08 | Kuang-Hsiung Chen | Stackable Semiconductor Device Packages |
US20100224974A1 (en) * | 2009-03-04 | 2010-09-09 | Il Kwon Shim | Integrated circuit packaging system with patterned substrate and method of manufacture thereof |
US20100230789A1 (en) * | 2009-03-16 | 2010-09-16 | Renesas Technology Corp. | Semiconductor device and manufacturing method thereof |
US9012789B1 (en) * | 2009-06-12 | 2015-04-21 | Amkor Technology, Inc. | Stackable via package and method |
US8704368B1 (en) * | 2009-06-12 | 2014-04-22 | Amkor Technology, Inc. | Stackable via package and method |
US10034372B1 (en) * | 2009-06-12 | 2018-07-24 | Amkor Technology, Inc. | Stackable via package and method |
US10206285B1 (en) * | 2009-06-12 | 2019-02-12 | Amkor Technology, Inc. | Stackable via package and method |
US8222538B1 (en) * | 2009-06-12 | 2012-07-17 | Amkor Technology, Inc. | Stackable via package and method |
US9922955B2 (en) * | 2010-03-04 | 2018-03-20 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of forming package-on-package structure electrically interconnected through TSV in WLCSP |
US20120013001A1 (en) * | 2010-07-19 | 2012-01-19 | Tessera Research Llc | Stackable molded microelectronic packages with area array unit connectors |
US9837331B1 (en) * | 2010-12-03 | 2017-12-05 | Amkor Technology, Inc. | Semiconductor device having overlapped via apertures |
US20120146181A1 (en) * | 2010-12-10 | 2012-06-14 | Stats Chippac, Ltd. | Semiconductor Device and Method of Forming an Inductor Within Interconnect Layer Vertically Separated from Semiconductor Die |
US8508045B2 (en) * | 2011-03-03 | 2013-08-13 | Broadcom Corporation | Package 3D interconnection and method of making same |
US20120225522A1 (en) * | 2011-03-03 | 2012-09-06 | Broadcom Corporation | Package 3D Interconnection and Method of Making Same |
US20130119539A1 (en) * | 2011-11-16 | 2013-05-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package Structures and Methods for Forming the Same |
US10410967B1 (en) * | 2011-11-29 | 2019-09-10 | Amkor Technology, Inc. | Electronic device comprising a conductive pad on a protruding-through electrode |
US20130249115A1 (en) * | 2012-03-23 | 2013-09-26 | Stats Chippac, Ltd. | Semiconductor Method and Device of Forming a Fan-Out PoP Device with PWB Vertical Interconnect Units |
US20140048906A1 (en) * | 2012-03-23 | 2014-02-20 | Stats Chippac, Ltd. | Semiconductor Device and Method of Forming a Fan-Out PoP Device with PWB Vertical Interconnect Units |
US9837303B2 (en) * | 2012-03-23 | 2017-12-05 | STATS ChipPAC Pte. Ltd. | Semiconductor method and device of forming a fan-out device with PWB vertical interconnect units |
US9842798B2 (en) * | 2012-03-23 | 2017-12-12 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of forming a PoP device with embedded vertical interconnect units |
US20140103527A1 (en) * | 2012-03-23 | 2014-04-17 | Stats Chippac, Ltd. | Semiconductor Device and Method of Forming a POP Device with Embedded Vertical Interconnect Units |
US20130249101A1 (en) * | 2012-03-23 | 2013-09-26 | Stats Chippac, Ltd. | Semiconductor Method of Device of Forming a Fan-Out PoP Device with PWB Vertical Interconnect Units |
US10446479B2 (en) * | 2012-03-23 | 2019-10-15 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of forming a PoP device with embedded vertical interconnect units |
US20130341784A1 (en) * | 2012-06-21 | 2013-12-26 | Stats Chippac, Ltd. | Semiconductor Device and Method of Forming an Embedded SOP Fan-Out Package |
US9355444B2 (en) * | 2012-09-28 | 2016-05-31 | Skyworks Solutions, Inc. | Systems and methods for processing packaged radio-frequency modules identified as being potentially defective |
US20160013175A1 (en) * | 2013-03-11 | 2016-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package-on-Package Structure and Methods for Forming the Same |
US20140307394A1 (en) * | 2013-04-16 | 2014-10-16 | Skyworks Solutions, Inc. | Apparatus and methods related to conformal coating implemented with surface mount devices |
US9419667B2 (en) * | 2013-04-16 | 2016-08-16 | Skyworks Solutions, Inc. | Apparatus and methods related to conformal coating implemented with surface mount devices |
US20180146541A1 (en) * | 2013-04-16 | 2018-05-24 | Skyworks Solutions, Inc. | Methods related to implementing surface mount devices with ground paths |
US9788466B2 (en) * | 2013-04-16 | 2017-10-10 | Skyworks Solutions, Inc. | Apparatus and methods related to ground paths implemented with surface mount devices |
US20140308907A1 (en) * | 2013-04-16 | 2014-10-16 | Skyworks Solutions, Inc. | Apparatus and methods related to ground paths implemented with surface mount devices |
US20170042069A1 (en) * | 2013-04-16 | 2017-02-09 | Skyworks Solutions, Inc. | Apparatus and methods related to conformal coating implemented with surface mount devices |
US20150126134A1 (en) * | 2013-11-05 | 2015-05-07 | Skyworks Solutions, Inc. | Devices and methods related to packaging of radio-frequency devices on ceramic substrates |
US20170149466A1 (en) * | 2013-11-05 | 2017-05-25 | Skyworks Solutions, Inc. | Devices and methods related to packaging of radio-frequency devices on ceramic substrates |
US9564937B2 (en) * | 2013-11-05 | 2017-02-07 | Skyworks Solutions, Inc. | Devices and methods related to packaging of radio-frequency devices on ceramic substrates |
US10192816B2 (en) * | 2013-11-19 | 2019-01-29 | Amkor Technology, Inc. | Semiconductor package and fabricating method thereof |
US20190131254A1 (en) * | 2013-12-04 | 2019-05-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Warpage Control in Package-on-Package Structures |
US20170084549A1 (en) * | 2013-12-04 | 2017-03-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Warpage Control in Package-on-Package Structures |
US20180226363A1 (en) * | 2013-12-04 | 2018-08-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Warpage Control in Package-on-Package Structures |
US9941221B2 (en) * | 2013-12-04 | 2018-04-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Warpage control in package-on-package structures |
US20170207152A1 (en) * | 2014-03-05 | 2017-07-20 | Intel Corporation | Package Structure To Enhance Yield of TMI Interconnections |
US20150255415A1 (en) * | 2014-03-05 | 2015-09-10 | Thomas J. De Bonis | Package Structure To Enhance Yield of TMI Interconnections |
US20160035593A1 (en) * | 2014-07-31 | 2016-02-04 | Skyworks Solutions, Inc. | Devices and methods related to support for packaging substrate panel having cavities |
US20160035679A1 (en) * | 2014-07-31 | 2016-02-04 | Skyworks Solutions, Inc. | Devices and methods related to dual-sided radio-frequency package having substrate cavity |
US20160111375A1 (en) * | 2014-10-17 | 2016-04-21 | Tango Systems, Inc. | Temporary bonding of packages to carrier for depositing metal layer for shielding |
US20160161992A1 (en) * | 2014-12-05 | 2016-06-09 | Heung Kyu Kwon | Package on packages and mobile computing devices having the same |
US20170040293A1 (en) * | 2015-08-03 | 2017-02-09 | Samsung Electronics Co., Ltd. | Printed circuit board (pcb), method of manufacturing the pcb, and method of manufacturing semiconductor package using the pcb |
US20170117184A1 (en) * | 2015-09-30 | 2017-04-27 | Skyworks Solutions, Inc. | Devices and methods related to fabrication of shielded modules |
US20170317710A1 (en) * | 2016-04-29 | 2017-11-02 | Skyworks Solutions, Inc. | Shielded diversity receive module |
US20170345862A1 (en) * | 2016-05-26 | 2017-11-30 | Semiconductor Components Industries, Llc | Semiconductor package with interposer |
US20180096951A1 (en) * | 2016-10-04 | 2018-04-05 | Skyworks Solutions, Inc. | Circuits and methods related to radio-frequency devices with overmold structure |
US20180096949A1 (en) * | 2016-10-04 | 2018-04-05 | Skyworks Solutions, Inc. | Dual-sided radio-frequency package with overmold structure |
US20180240763A1 (en) * | 2017-01-30 | 2018-08-23 | Skyworks Solutions, Inc. | Dual-sided module with land-grid array (lga) footprint |
US20180226274A1 (en) * | 2017-01-31 | 2018-08-09 | Skyworks Solutions, Inc. | Control of under-fill using an encapsulant for a dual-sided ball grid array package |
US20180226273A1 (en) * | 2017-01-31 | 2018-08-09 | Skyworks Solutions, Inc. | Control of under-fill using a dam on a packaging substrate for a dual-sided ball grid array package |
US20180226272A1 (en) * | 2017-01-31 | 2018-08-09 | Skyworks Solutions, Inc. | Control of under-fill using under-fill deflash for a dual-sided ball grid array package |
US10410885B2 (en) * | 2017-01-31 | 2019-09-10 | Skyworks Solutions, Inc. | Control of under-fill using under-fill deflash for a dual-sided ball grid array package |
US20180226271A1 (en) * | 2017-01-31 | 2018-08-09 | Skyworks Solutions, Inc. | Control of under-fill using a film during fabrication for a dual-sided ball grid array package |
US20180218922A1 (en) * | 2017-01-31 | 2018-08-02 | Skyworks Solutions, Inc. | Control of under-fill with a packaging substrate having an integrated trench for a dual-sided ball grid array package |
US10460957B2 (en) * | 2017-01-31 | 2019-10-29 | Skyworks Solutions, Inc. | Control of under-fill using an encapsulant for a dual-sided ball grid array package |
Non-Patent Citations (1)
Title |
---|
Yoshida 9730327 * |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20180096951A1 (en) * | 2016-10-04 | 2018-04-05 | Skyworks Solutions, Inc. | Circuits and methods related to radio-frequency devices with overmold structure |
US10607944B2 (en) | 2016-10-04 | 2020-03-31 | Skyworks Solutions, Inc. | Dual-sided radio-frequency package with overmold structure |
US11961805B2 (en) | 2016-10-04 | 2024-04-16 | Skyworks Solutions, Inc. | Devices and methods related to dual-sided radio-frequency package with overmold structure |
US20200243459A1 (en) * | 2017-01-12 | 2020-07-30 | Amkor Technology, Inc. | Semiconductor Package With EMI Shield and Fabricating Method Thereof |
US11075170B2 (en) * | 2017-01-12 | 2021-07-27 | Amkor Technology Singapore Holding Pte. Ltd. | Semiconductor package with EMI shield and fabricating method thereof |
US20210351137A1 (en) * | 2017-01-12 | 2021-11-11 | Amkor Technology Singapore Holding Pte. Ltd. | Semiconductor Package With EMI Shield and Fabricating Method Thereof |
US11637073B2 (en) * | 2017-01-12 | 2023-04-25 | Amkor Technology Singapore Holding Pte. Ltd. | Semiconductor package with EMI shield and fabricating method thereof |
US20230411303A1 (en) * | 2017-01-12 | 2023-12-21 | Amkor Technology Singapore Holding Pte. Ltd. | Semiconductor Package With EMI Shield and Fabricating Method Thereof |
US11967567B2 (en) * | 2017-01-12 | 2024-04-23 | Amkor Technology Singapore Holding Pte. Ltd. | Semiconductor package with EMI shield and fabricating method thereof |
US20180218922A1 (en) * | 2017-01-31 | 2018-08-02 | Skyworks Solutions, Inc. | Control of under-fill with a packaging substrate having an integrated trench for a dual-sided ball grid array package |
US10593565B2 (en) * | 2017-01-31 | 2020-03-17 | Skyworks Solutions, Inc. | Control of under-fill with a packaging substrate having an integrated trench for a dual-sided ball grid array package |
WO2021131775A1 (en) * | 2019-12-27 | 2021-07-01 | 株式会社村田製作所 | Module |
Also Published As
Publication number | Publication date |
---|---|
US11127690B2 (en) | 2021-09-21 |
CN110024115A (en) | 2019-07-16 |
US20180096949A1 (en) | 2018-04-05 |
KR20230132883A (en) | 2023-09-18 |
US20180096951A1 (en) | 2018-04-05 |
US20240347476A1 (en) | 2024-10-17 |
US20200321287A1 (en) | 2020-10-08 |
KR102711053B1 (en) | 2024-09-30 |
CN110024115B (en) | 2024-02-02 |
US20220115331A1 (en) | 2022-04-14 |
WO2018067578A1 (en) | 2018-04-12 |
US11961805B2 (en) | 2024-04-16 |
US10607944B2 (en) | 2020-03-31 |
KR20190067839A (en) | 2019-06-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11127690B2 (en) | Dual-sided radio-frequency package with overmold structure | |
US20160099192A1 (en) | Dual-sided radio-frequency package having ball grid array | |
US10276401B2 (en) | 3D shielding case and methods for forming the same | |
US10771101B2 (en) | Devices and methods related to packaging of radio-frequency devices on ceramic substrates | |
US8525313B2 (en) | Chip assembly with frequency extending device | |
KR20140124340A (en) | Apparatus and methods related to conformal coating implemented with surface mount devices | |
CN110663113A (en) | Shielded fan-out packaged semiconductor device and method of manufacture | |
US20160035679A1 (en) | Devices and methods related to dual-sided radio-frequency package having substrate cavity | |
US20200161222A1 (en) | Methods related to through-mold openings for dual-sided packaged modules with ball grid arrays | |
US12033954B2 (en) | Packaged module with ball grid array and grounding pins for signal isolation, method of manufacturing the same, and wireless device comprising the same | |
US20180076148A1 (en) | Through-mold features for shielding applications | |
US20180226361A1 (en) | Controlled standoff for module with ball grid array | |
US20180198436A1 (en) | Radio-frequency package with overmold structure | |
KR20220088295A (en) | Selective emi shielding using preformed mask with fang design | |
KR20220068134A (en) | Selective emi shielding using preformed mask | |
US20240332225A1 (en) | Antenna package having a laminate substrate | |
US20230326841A1 (en) | Dual-sided packaged radio-frequency module having ball grid array embedded in underside molding | |
US20240087999A1 (en) | Packaging substrate having metal posts | |
US20230215813A1 (en) | Semiconductor Device and Method for Selective EMI Shielding Using a Mask | |
KR20240033563A (en) | Semiconductor device and method for manufacturing the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: SKYWORKS SOLUTIONS, INC., MASSACHUSETTS Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:CHEN, HOWARD E.;DARVEAUX, ROBERT FRANCIS;NGUYEN, HOANG MONG;REEL/FRAME:047065/0949 Effective date: 20180426 |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NON FINAL ACTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: FINAL REJECTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NON FINAL ACTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: FINAL REJECTION MAILED |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |